LH28F800SG_技术文档

LH28F800SG-L (FOR SOP)

8 M-bit (512 kB x 16) SmartVoltage

Flash Memory

LH28F800SG-L

(FOR SOP)

DESCRIPTION

• Enhanced data protection features

– Absolute protection with VPP = GND

– Flexible block locking

The LH28F800SG-L flash memory with Smart

Voltage technology is

a

high-density, low-

cost, nonvolatile, read/write storage solution for a

wide range of applications. The LH28F800SG-L

can operate at VCC = 2.7 V and VPP = 2.7 V. Its

low voltage operation capability realizes longer

battery life and suits for cellular phone application.

Its symmetrically-blocked architecture, flexible

voltage and enhanced cycling capability provide for

highly flexible component suitable for resident flash

arrays, SIMMs and memory cards. Its enhanced

suspend capabilities provide for an ideal solution for

code + data storage applications. For secure code

storage applications, such as networking, where

code is either directly executed out of flash or

downloaded to DRAM, the LH28F800SG-L offers

three levels of protection : absolute protection with

VPP at GND, selective hardware block locking, or

flexible software block locking.These alternatives

give designers ultimate control of their code security

needs.

– Block erase/word write lockout during power

transitions

• SRAM-compatible write interface

• High-density symmetrically-blocked architecture

– Sixteen 32 k-word erasable blocks

• Enhanced cycling capability

– 100 000 block erase cycles

– 1.6 million block erase cycles/chip

• Low power management

– Deep power-down mode

– Automatic power saving mode decreases ICC

in static mode

• Automated word write and block erase

– Command user interface

– Status register

• ETOX^TMV nonvolatile flash technology

• Package

– 44-pin SOP (SOP044-P-0600)

ETOX is a trademark of Intel Corporation.

FEATURES

• SmartVoltage technology

– 2.7 V, 3.3 V or 5 V VCC

– 2.7 V, 3.3 V, 5 V or 12 V VPP

• High performance read access time

LH28F800SG-L70

– 70 ns (5.0±0.25 V)/80 ns (5.0±0.5 V)/

85 ns (3.3±0.3 V)/100 ns (2.7 to 3.0 V)

LH28F800SG-L10

– 100 ns (5.0 ±0.5 V)/100 ns (3.3±0.3 V)/

120 ns (2.7 to 3.0 V)

• Enhanced automated suspend options

– Word write suspend to read

– Block erase suspend to word write

– Block erase suspend to read

In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,

etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

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LH28F800SG-L (FOR SOP)

COMPARISON TABLE

VERSIONS

LH28F800SG-L

(FOR SOP)

OPERATING TEMPERATURE

PACKAGE

WRITE PROTECT FUNCTION

0 to +70˚C

44-pin SOP

Controlled by RP# pin

1

Controlled by

LH28F800SG-L

48-pin TSOP (I)

48-ball CSP

(FOR TSOP, CSP)

WP# and RP# pins

Controlled by

1

LH28F800SGH-L

48-pin TSOP (I)

48-ball CSP

–40 to +85˚C

(FOR TSOP, CSP)

WP# and RP# pins

1 Refer to the datasheet of LH28F800SG-L/SGH-L (FOR TSOP, CSP).

PIN CONNECTIONS

44-PIN SOP

TOP VIEW

1

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

VPP

A18

A17

A7

A6

A5

A4

A3

A2

A1

A0

CE#

GND

OE#

DQ⁰

DQ8

RP#

WE#

A⁸

A9

A10

A11

A12

A13

A14

2

3

4

5

6

7

8

9

10

A15

A16

NC

11

12

13

GND

DQ¹⁵

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

VCC

14

15

16

17

DQ1

DQ9

DQ2

DQ10

DQ3

DQ11

18

19

20

21

22

(SOP044-P-0600)

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LH28F800SG-L (FOR SOP)

BLOCK DIAGRAMS

DQ0-DQ15

OUTPUT

BUFFER

INPUT

BUFFER

I/O

LOGIC

VCC

IDENTIFIER

REGISTER

CE#

STATUS

REGISTER

WE#

OE#

RP#

COMMAND

USER

INTERFACE

DATA

COMPARATOR

RY/BY#

V^PP

Y DECODER

X DECODER

Y GATING

INPUT

A0-A18

WRITE

STATE

MACHINE

BUFFER

PROGRAM/ERASE

VOLTAGE SWITCH

ADDRESS

LATCH

VCC

16

32 k-WORD

BLOCKS

GND

ADDRESS

COUNTER

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LH28F800SG-L (FOR SOP)

PIN DESCRIPTION

SYMBOL

TYPE

NAME AND FUNCTION

ADDRESS INPUTS : Inputs for addresses during read and write operations. Addresses

are internally latched during a write cycle.

A0-A18

INPUT

DATA INPUT/OUTPUTS : Inputs data and commands during CUI write cycles; outputs

data during memory array, status register, and identifier code read cycles. Data pins

float to high-impedance when the chip is deselected or outputs are disabled. Data is

internally latched during a write cycle.

INPUT/

DQ0-DQ15

CE#

OUTPUT

CHIP ENABLE : Activates the device's control logic, input buffers, decoders, and sense

amplifiers. CE#-high deselects the device and reduces power consumption to standby

levels.

INPUT

RESET/DEEP POWER-DOWN : Puts the device in deep power-down mode and resets

internal automation. RP#-high enables normal operation. When driven low, RP# inhibits

write operations which provide data protection during power transitions. Exit from deep

power-down sets the device to read array mode. RP# at VHH allows to set permanent

lock-bit. Block erase, word write, or lock-bit configuration with VIH < RP# < VHH produce

spurious results and should not be attempted.

RP#

OE#

WE#

INPUT

OUTPUT ENABLE : Controls the device's outputs during a read cycle.

WRITE ENABLE : Controls writes to the CUI and array blocks. Addresses and data are

latched on the rising edge of the WE# pulse.

READY/BUSY : Indicates the status of the internal WSM. When low, the WSM is

performing an internal operation (block erase, word write, or lock-bit configuration).

RY/BY#-high indicates that the WSM is ready for new commands, block erase is

suspended, and word write is inactive, word write is suspended, or the device is in deep

power-down mode. RY/BY# is always active and does not float when the chip is

deselected or data outputs are disabled.

RY/BY#

OUTPUT

SUPPLY

BLOCK ERASE, WORD WRITE, LOCK-BIT CONFIGURATION POWER SUPPLY :

For erasing array blocks, writing word, or configuring lock-bits. With VPP ≤ VPPLK,

memory contents cannot be altered. Block erase, word write, and lock-bit configuration

with an invalid VPP (see Section 6.2.3 "DC CHARACTERISTICS") produce spurious

results and should not be attempted.

VPP

DEVICE POWER SUPPLY : Internal detection configures the device for 2.7 V, 3.3 V or

5 V operation. To switch from one voltage to another, ramp VCC down to GND and then

ramp VCC to the new voltage. Do not float any power pins. With VCC ≤ VLKO, all write

attempts to the flash memory are inhibited. Device operations at invalid VCC voltage

(see Section 6.2.3 "DC CHARACTERISTICS") produce spurious results and should

not be attempted.

VCC

SUPPLY

GND

NC

SUPPLY GROUND : Do not float any ground pins.

NO CONNECT : Lead is not internal connected; recommend to be floated.

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LH28F800SG-L (FOR SOP)

1 INTRODUCTION

the power of 5 V VCC. But, 5 V VCC provides the

highest read performance. VPP at 2.7 V, 3.3 V and

5 V eliminates the need for a separate 12 V

converter, while VPP = 12 V maximizes block erase

and word write performance. In addition to flexible

erase and program voltages, the dedicated VPP pin

gives complete data protection when VPP ≤ VPPLK.

This datasheet contains LH28F800SG-L specifi-

cations. Section 1 provides a flash memory

overview. Sections 2, 3, 4, and 5 describe the

memory organization and functionality. Section 6

covers electrical specifications. LH28F800SG-L flash

memory documentation also includes ordering

information which is referenced in Section 7.

Table 1 VCC and VPP Voltage Combinations

Offered by SmartVoltage Technology

1.1 New Features

Key enhancements of LH28F800SG-L SmartVoltage

VCC VOLTAGE

2.7 V

VPP VOLTAGE

2.7 V, 3.3 V, 5 V, 12 V

3.3 V, 5 V, 12 V

5 V, 12 V

flash memory are :

3.3 V

• SmartVoltage Technology

• Enhanced Suspend Capabilities

• In-System Block Locking

• Permanent Lock Capability

5 V

Internal VCC and VPP detection circuitry auto-

matically configures the device for optimized read

and write operations.

Note following important differences :

A command User Interface (CUI) serves as the

interface between the system processor and

internal operation of the device. A valid command

sequence written to the CUI initiates device

automation. An internal Write State Machine (WSM)

automatically executes the algorithms and timing

necessary for block erase, word write, and lock-bit

configuration operations.

• VPPLK has been lowered to 1.5 V to support

3.3 V and 5 V block erase, word write, and lock-

bit configuration operations. Designs that switch

VPP off during read operations should make sure

that the VPP voltage transitions to GND.

• To take advantage of SmartVoltage technology,

allow VCC connection to 2.7 V, 3.3 V or 5 V.

• Once set the permanent lock bit, the blocks which

have been set block lock-bit can not be erased,

written forever.

A block erase operation erases one of the device’s

32 k-word blocks typically within 1.2 second (5 V

VCC, 12 V VPP) independent of other blocks. Each

block can be independently erased 100 000 times

(1.6 million block erases per device). Block erase

suspend mode allows system software to suspend

block erase to read data from, or write data to any

other block.

1.2 Product Overview

The LH28F800SG-L is a high-performance 8 M-bit

SmartVoltage flash memory organized as 512 k-

word of 16 bits. The 512 k-word of data is arranged

in sixteen 32 k-word blocks which are individually

erasable, lockable, and unlockable in-system. The

memory map is shown in Fig. 1.

Writing memory data is performed in word

increments typically within 7.5 µs (5 V VCC, 12 V

VPP). Word write suspend mode enables the

system to read data from, or write data to any other

flash memory array location.

SmartVoltage technology provides a choice of VCC

and VPP combinations, as shown in Table 1, to

meet system performance and power expectations.

2.7 to 3.6 V VCC consumes approximately one-fifth

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LH28F800SG-L (FOR SOP)

The selected block can be locked or unlocked

individually by the combination of sixteen block lock

bits and the RP#. Block erase or word write must

not be carried out by setting block lock bits and

RP# to VIH. Even if RP# is set to VHH, block erase

and word write to locked blocks is prohibited by

setting permanent lock bit.

When CE# and RP# pins are at VCC, the ICC

CMOS standby mode is enabled. When the RP#

pin is at GND, deep power-down mode is enabled

which minimizes power consumption and provides

write protection during reset. A reset time (tPHQV) is

required from RP# switching high until outputs are

valid. Likewise, the device has a wake time (tPHEL)

from RP#-high until writes to the CUI are

recognized. With RP# at GND, the WSM is reset

and the status register is cleared.

The status register or RY/BY# indicates when the

WSM’s block erase, word write, or lock-bit

configuration operation is finished.

7FFFF

The RY/BY# output gives an additional indicator of

WSM activity by providing both a hardware signal

of status (versus software polling) and status

masking (interrupt masking for background block

erase, for example). Status polling using RY/BY#

minimizes both CPU overhead and system power

consumption. When low, RY/BY# indicates that the

WSM is performing a block erase, word write, or

lock-bit configuration.

15

14

13

12

11

10

9

32 k-Word Block

78000

77FFF

70000

6FFFF

68000

67FFF

60000

5FFFF

58000

57FFF

50000

4FFFF

48000

47FFF

40000

3FFFF

38000

37FFF

8

RY/BY#-high indicates that the WSM is ready for a

new command, block erase is suspended (and

word write is inactive), word write is suspended, or

the device is in deep power-down mode.

7

6

30000

2FFFF

5

28000

27FFF

20000

1FFFF

4

The access time is 70 ns (tAVQV) at the VCC supply

voltage range of 4.75 to 5.25 V over the

temperature range (0 to +70˚C). At 4.5 to 5.5 V

VCC, the access time is 80 ns or 100 ns. At lower

VCC voltage, the access time is 85 ns or 100 ns

(3.0 to 3.6 V) and 100 ns or 120 ns (2.7 to 3.0 V).

3

18000

17FFF

2

10000

0FFFF

1

08000

07FFF

0

00000

The Automatic Power Saving (APS) feature

substantially reduces active current when the

device is in static mode (addresses not switching).

In APS mode, the typical ICCR current is 1 mA at

5 V VCC and 3 mA at 2.7 to 3.6 V VCC.

Fig. 1 Memory Map

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LH28F800SG-L (FOR SOP)

2 PRINCIPLES OF OPERATION

software to suspend a block erase to read/write

data from/to blocks other than that which is

suspended. Word write suspend allows system

software to suspend a word write to read data from

any other flash memory array location.

The LH28F800SG-L SmartVoltage flash memory

includes an on-chip WSM to manage block erase,

word write, and lock-bit configuration functions. It

allows for : 100% TTL-level control inputs, fixed

power supplies during block erasure, word write,

and lock-bit configuration, and minimal processor

overhead with RAM-like interface timings.

2.1 Data Protection

Depending on the application, the system designer

may choose to make the VPP power supply

switchable (available only when memory block

erases, word writes, or lock-bit configurations are

required) or hardwired to VPPH1/2/3. The device

accommodates either design practice and

encourages optimization of the processor-memory

interface.

After initial device power-up or return from deep

power-down mode (see Table 2 "Bus Operations"),

the device defaults to read array mode. Manipulation

of external memory control pins allow array read,

standby, and output disable operations.

Status register and identifier codes can be

accessed through the CUI independent of the VPP

voltage. High voltage on VPP enables successful

block erasure, word writing, and lock-bit

configuration. All functions associated with altering

memory contents — block erase, word write, lock-

bit configuration, status, and identifier codes — are

accessed via the CUI and verified through the

status register.

When VPP ≤ VPPLK, memory contents cannot be

altered. The CUI, with two-step block erase, word

write, or lock-bit configuration command sequences,

provides protection from unwanted operations even

when high voltage is applied to VPP. All write

functions are disabled when VCC is below the write

lockout voltage VLKO or when RP# is at VIL. The

device’s block locking capability provides additional

protection from inadvertent code or data alteration

by gating erase and word write operations.

Commands are written using standard micro-

processor write timings. The CUI contents serve as

input to the WSM, which controls the block erase,

word write, and lock-bit configuration. The internal

algorithms are regulated by the WSM, including

pulse repetition, internal verification, and margining

of data. Addresses and data are internally latched

during write cycles. Writing the appropriate

command outputs array data, accesses the

identifier codes, or outputs status register data.

3 BUS OPERATION

The local CPU reads and writes flash memory in-

system. All bus cycles to or from the flash memory

conform to standard microprocessor bus cycles.

3.1 Read

Information can be read from any block, identifier

codes, or status register independent of the VPP

voltage. RP# can be at either VIH or VHH.

Interface software that initiates and polls progress

of block erase, word write, and lock-bit configuration

can be stored in any block. This code is copied to

and executed from system RAM during flash

memory updates. After successful completion,

reads are again possible via the Read Array

command. Block erase suspend allows system

The first task is to write the appropriate read mode

command (Read Array, Read Identifier Codes, or

Read Status Register) to the CUI. Upon initial

device power-up or after exit from deep power-

down mode, the device automatically resets to read

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LH28F800SG-L (FOR SOP)

array mode. Four control pins dictate the data flow

in and out of the component : CE#, OE#, WE# and

RP#. CE# and OE# must be driven active to obtain

data at the outputs. CE# is the device selection

control, and when active enables the selected

memory device. OE# is the data output (DQ0-DQ15)

control and when active drives the selected

memory data onto the I/O bus. WE# must be at VIH

and RP# must be at VIH or VHH. Fig. 13 illustrates

read cycle.

During block erase, word write, or lock-bit

configuration modes, RP#-low will abort the

operation. RY/BY# remains low until the reset

operation is complete. Memory contents being

altered are no longer valid; the data may be

partially erased or written. Time tPHWL is required

after RP# goes to logic-high (VIH) before another

command can be written.

As with any automated device, it is important to

assert RP# during system reset. When the system

comes out of reset, it expects to read from the flash

memory. Automated flash memories provide status

information when accessed during block erase,

word write, or lock-bit configuration modes. If a

CPU reset occurs with no flash memory reset,

proper CPU initialization may not occur because

the flash memory may be providing status

information instead of array data. SHARP’s flash

memories allow proper CPU initialization following a

system reset through the use of the RP# input. In

this application, RP# is controlled by the same

RESET# signal that resets the system CPU.

3.2 Output Disable

With OE# at a logic-high level (VIH), the device

outputs are disabled. Output pins DQ0-DQ15 are

placed in a high-impedance state.

3.3 Standby

CE# at a logic-high level (VIH) places the device in

standby mode which substantially reduces device

power consumption. DQ0-DQ15 outputs are placed

in a high-impedance state independent of OE#. If

deselected during block erase, word write, or lock-

bit configuration, the device continues functioning,

and consuming active power until the operation

completes.

3.4 Deep Power-Down

RP# at VIL initiates the deep power-down mode.

In read modes, RP#-low deselects the memory,

places output drivers in a high-impedance state and

turns off all internal circuits. RP# must be held low

for a minimum of 100 ns. Time tPHQV is required

after return from power-down until initial memory

access outputs are valid. After this wake-up

interval, normal operation is restored. The CUI is

reset to read array mode and status register is set

to 80H.

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LH28F800SG-L (FOR SOP)

3.5 Read Identifier Codes

3.6 Write

The read identifier codes operation outputs the

manufacture code, device code, block lock

configuration codes for each block, and the

permanent lock configuration code (see Fig. 2).

Using the manufacture and device codes, the

system CPU can automatically match the device

with its proper algorithms. The block lock and

permanent lock configuration codes identify locked

and unlocked blocks and permanent lock-bit setting.

Writing commands to the CUI enable reading of

device data and identifier codes. They also control

inspection and clearing of the status register.

The Block Erase command requires appropriate

command data and an address within the block to

be erased. The Word Write command requires the

command and address of the location to be written.

Set Permanent and Block Lock-Bit commands

require the command and address within the device

(Permanent Lock) or block within the device (Block

Lock) to be locked. The Clear Block Lock-Bits

command requires the command and address

within the device.

7FFFF

Reserved for

Future Implementation

78004

78003

The CUI does not occupy an addressable memory

location. It is written when WE# and CE# are

active. The address and data needed to execute a

command are latched on the rising edge of WE# or

CE# (whichever goes high first). Standard

microprocessor write timings are used. Fig. 14 and

Fig. 15 illustrate WE# and CE# controlled write

operations.

78002

78001

78000

Block 15 Lock Configuration Code

Reserved for

Future Implementation

Block 15

(Blocks 2 through 14)

0FFFF

Reserved for

Future Implementation

08004

08003

08002

08001

08000

07FFF

4 COMMAND DEFINITIONS

When the VPP ≤ VPPLK, read operations from the

status register, identifier codes, or blocks are

enabled. Placing VPPH1/2/3 on VPP enables

successful block erase, word write and lock-bit

configuration operations.

Block 1 Lock Configuration Code

Reserved for

Future Implementation

Block 1

Reserved for

Future Implementation

00004

00003

00002

00001

00000

Device operations are selected by writing specific

commands into the CUI. Table 3 defines these

commands.

Permanent Lock Configuration Code

Block 0 Lock Configuration Code

Device Code

Manufacture Code

Block 0

Fig. 2 Device Identifier Code Memory Map

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LH28F800SG-L (FOR SOP)

Table 2 Bus Operations

MODE

NOTE

RP#

CE#

V_IL

V_IH

X

OE#

V_IL

V_IH

X

WE#

V_IH

X

ADDRESS

V_PP

X

DQ_0-15RY/BY#

Read

1, 2, 3, 8

V

IH or VHH

VIL

X

D_OUT

High Z

X

Output Disable

Standby

3

X

3

X

Deep Power-Down

Read Identifier Codes

Write

4

8

X

See Fig. 2

X

V_OH

X

V

IH or VHH

V_IL

V_IH

V_IL

X

(

NOTE 5)

3, 6, 7, 8

V

X

D_IN

NOTES :

1. Refer to Section 6.2.3 "DC CHARACTERISTICS".

When VPP ≤ VPPLK, memory contents can be read, but

not altered.

4. RP# at GND±0.2 V ensures the lowest deep power-

down current.

5. See Section 4.2 for read identifier code data.

6. VIH < RP# < VHH produce spurious results and should

not be attempted.

2. X can be VIL or VIH for control pins and addresses, and

VPPLK or VPPH1/2/3 for VPP. See Section 6.2.3 "DC

CHARACTERISTICS" for VPPLK and VPPH1/2/3 voltages.

3. RY/BY# is VOL when the WSM is executing internal

block erase, word write, or lock-bit configuration

algorithms. It is VOH during when the WSM is not busy,

in block erase suspend mode (with word write inactive),

word write suspend mode, or deep power-down mode.

7. Refer to Table 3 for valid DIN during a write operation.

8. Don’t use the timing both OE# and WE# are VIL.

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LH28F800SG-L (FOR SOP)

SECOND BUS CYCLE

Table 3 Command Definitions ^{(NOTE 9)}

BUS CYCLES

FIRST BUS CYCLE

COMMAND

NOTE

REQ’D.

Oper ^{(NOTE 1)}Addr ^{(NOTE 2)}Data ^{(NOTE 3)}Oper ^{(NOTE 1)}Addr ^{(NOTE 2)}Data ^{(NOTE 3)}

Read Array/Reset

Read Identifier Codes

Read Status Register

Clear Status Register

Block Erase

1

≥ 2

2

Write

X

FFH

90H

4

Read

IA

X

ID

X

70H

SRD

1

X

50H

2

5

BA

WA

20H

Write

BA

D0H

WD

Word Write

2

5, 6

40H or 10H

WA

Block Erase and

1

5

Write

X

B0H

D0H

Word Write Suspend

Block Erase and

Word Write Resume

Set Block Lock-Bit

Set Permanent Lock-Bit

Clear Block Lock-Bits

2

7

8

Write

BA

X

60H

Write

BA

X

01H

F1H

D0H

X

NOTES :

1. Bus operations are defined in Table 2.

2. X = Any valid address within the device.

IA = Identifier code address : see Fig. 2.

6. Either 40H or 10H is recognized by the WSM as the

word write setup.

7. If the permanent lock-bit is set, RP# must be at VHH to

set a block lock-bit. RP# must be at VHH to set the

permanent lock-bit. If the permanent lock-bit is set, a

block lock-bit cannot be set. Once the permanent lock-bit

is set, permanent lock-bit reset is unable.

BA = Address within the block being erased or locked.

WA = Address of memory location to be written.

3. SRD = Data read from status register. See Table 6 for a

description of the status register bits.

WD = Data to be written at location WA. Data is latched

on the rising edge of WE# or CE# (whichever

goes high first).

8. If the permanent lock-bit is set, clear block lock-bits

operation is unable. The clear block lock-bits operation

simultaneously clears all block lock-bits. If the permanent

lock-bit is not set, the Clear Block Lock-Bits command

can be done while RP# is VHH.

ID = Data read from identifier codes.

4. Following the Read Identifier Codes command, read

operations access manufacture, device, block lock, and

permanent lock codes. See Section 4.2 for read

identifier code data.

9. Commands other than those shown above are reserved

by SHARP for future device implementations and should

not be used.

5. If the block is locked and the permanent lock-bit is not

set, RP# must be at VHH to enable block erase or word

write operations. Attempts to issue a block erase or word

write to a locked block while RP# is VHH.

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LH28F800SG-L (FOR SOP)

4.1 Read Array Command

4.3 Read Status Register Command

The status register may be read to determine when

a block erase, word write, or lock-bit configuration is

complete and whether the operation completed

successfully. It may be read at any time by writing

the Read Status Register command. After writing

this command, all subsequent read operations

output data from the status register until another

valid command is written. The status register

contents are latched on the falling edge of OE# or

CE#, whichever occurs. OE# or CE# must toggle to

VIH before further reads to update the status

register latch. The Read Status Register command

functions independently of the VPP voltage. RP#

can be VIH or VHH.

Upon initial device power-up and after exit from

deep power-down mode, the device defaults to

read array mode. This operation is also initiated by

writing the Read Array command. The device

remains enabled for reads until another command

is written. Once the internal WSM has started a

block erase, word write or lock-bit configuration, the

device will not recognize the Read Array command

until the WSM completes its operation unless the

WSM is suspended via an Erase Suspend or Word

Write Suspend command. The Read Array

command functions independently of the VPP

voltage and RP# can be VIH or VHH.

4.2 Read Identifier Codes Command

The identifier code operation is initiated by writing

the Read Identifier Codes command. Following the

command write, read cycles from addresses shown

in Fig. 2 retrieve the manufacture, device, block

lock configuration and permanent lock configuration

codes (see Table 4 for identifier code values). To

terminate the operation, write another valid

command. Like the Read Array command, the

Read Identifier Codes command functions

independently of the VPP voltage and RP# can be

VIH or VHH. Following the Read Identifier Codes

command, the following information can be read :

4.4 Clear Status Register Command

Status register bits SR.5, SR.4, SR.3, and SR.1 are

set to "1"s by the WSM and can only be reset by

the Clear Status Register command. These bits

indicate various failure conditions (see Table 6). By

allowing system software to reset these bits,

several operations (such as cumulatively erasing or

locking multiple blocks or writing several words in

sequence) may be performed. The status register

may be polled to determine if an error occurred

during the sequence.

To clear the status register, the Clear Status

Register command (50H) is written. It functions

independently of the applied VPP voltage. RP# can

be VIH or VHH. This command is not functional

during block erase or word write suspend modes.

Table 4 Identifier Codes

CODE

Manufacture Code

Device Code

ADDRESS DATA

00000H

00001H

00B0H

0050H

Block Lock Configuration ^{(NOTE 2)}XX002H ^{(NOTE 1)}

• Unlocked

• Locked

DQ0 = 0

DQ0 = 1

DQ1-15

4.5 Block Erase Command

Erase is executed one block at a time and initiated

by a two-cycle command. A block erase setup is

first written, followed by a block erase confirm.

This command sequence requires appropriate

sequencing and an address within the block to be

erased (erase changes all block data to FFH).

Block preconditioning, erase, and verify are handled

internally by the WSM (invisible to the system).

After the two-cycle block erase sequence is written,

•

Reserved for future enhancement

Permanent Lock Configuration ^{(NOTE 2)}

• Unlocked

00003H

DQ0 = 0

DQ0 = 1

DQ1-15

• Locked

•

Reserved for future enhancement

NOTES :

1. X selects the specific block lock configuration code to be

read. See Fig. 2 for the device identifier code memory map.

2. Block lock status and permanent lock status are output

by DQ0. DQ1-DQ15 are reserved for future enhancement.

- 12 -

LH28F800SG-L (FOR SOP)

the device automatically outputs status register data

when read (see Fig. 3). The CPU can detect block

erase completion by analyzing the output data of

the RY/BY# pin or status register bit SR.7.

completion of the word write event by analyzing the

RY/BY# pin or status register bit SR.7.

When word write is complete, status register bit

SR.4 should be checked. If word write error is

detected, the status register should be cleared. The

internal WSM verify only detects errors for "1"s that

do not successfully write to "0"s. The CUI remains

in read status register mode until it receives another

command.

When the block erase is complete, status register

bit SR.5 should be checked. If a block erase error

is detected, the status register should be cleared

before system software attempts corrective actions.

The CUI remains in read status register mode until

a new command is issued.

Reliable word writes can only occur when VCC =

VCC1/2/3/4 and VPP = VPPH1/2/3. In the absence of

this high voltage, memory contents are protected

against word writes. If word write is attempted while

VPP ≤ VPPLK, status register bits SR.3 and SR.4 will

be set to "1". Successful word write requires that

the corresponding block lock-bit be cleared or, if

set, that RP# = VHH. If word write is attempted

when the corresponding block lock-bit is set and

RP# = VIH, SR.1 and SR.4 will be set to "1". Once

permanent lock-bit is set, the blocks which have

been set block lock-bit are unable to write forever.

Word write operations with VIH < RP# < VHH

produce spurious results and should not be

attempted.

This two-step command sequence of set-up

followed by execution ensures that block contents

are not accidentally erased. An invalid Block Erase

command sequence will result in both status

register bits SR.4 and SR.5 being set to "1". Also,

reliable block erasure can only occur when VCC =

VCC1/2/3/4 and VPP = VPPH1/2/3. In the absence of

this high voltage, block contents are protected

against erasure. If block erase is attempted while

VPP ≤ VPPLK, SR.3 and SR.5 will be set to "1".

Successful block erase requires that the

corresponding block lock-bit be cleared or, if set,

that RP# = VHH. If block erase is attempted when

the corresponding block lock-bit is set and RP# =

VIH, SR.1 and SR.5 will be set to "1". Once

permanent lock-bit is set, the blocks which have

been set block lock-bit are unable to erase forever.

Block erase operations with VIH < RP# < VHH

produce spurious results and should not be

attempted.

4.7 Block Erase Suspend Command

The Block Erase Suspend command allows block

erase interruption to read or word write data in

another block of memory. Once the block erase

process starts, writing the Block Erase Suspend

command requests that the WSM suspend the

block erase sequence at a predetermined point in

the algorithm. The device outputs status register

data when read after the Block Erase Suspend

command is written. Polling status register bits

SR.7 and SR.6 can determine when the block

erase operation has been suspended (both will be

set to "1"). RY/BY# will also transition to VOH.

Specification tWHRH2 defines the block erase

suspend latency.

4.6 Word Write Command

Word write is executed by a two-cycle command

sequence. Word write setup (standard 40H or

alternate 10H) is written, followed by a second write

that specifies the address and data (latched on the

rising edge of WE#). The WSM then takes over,

controlling the word write and write verify algorithms

internally. After the word write sequence is written,

the device automatically outputs status register data

when read (see Fig. 4). The CPU can detect the

- 13 -

LH28F800SG-L (FOR SOP)

At this point, a Read Array command can be

written to read data from blocks other than that

which is suspended. A Word Write command

sequence can also be issued during erase suspend

to program data in other blocks. Using the Word

Write Suspend command (see Section 4.8), a

word write operation can also be suspended.

During a word write operation with block erase

suspended, status register bit SR.7 will return to "0"

and the RY/BY# output will transition to VOL.

However, SR.6 will remain "1" to indicate block

erase suspend status.

At this point, a Read Array command can be

written to read data from locations other than that

which is suspended. The only other valid

commands while word write is suspended are Read

Status Register and Word Write Resume. After

Word Write Resume command is written to the

flash memory, the WSM will continue the word

write process. Status register bits SR.2 and SR.7

will automatically clear and RY/BY# will return to

VOL. After the Word Write Resume command is

written, the device automatically outputs status

register data when read (see Fig. 6). VPP must

remain at VPPH1/2/3 (the same VPP level used for

word write) while in word write suspend mode. RP#

must also remain at VIH or VHH (the same RP#

level used for word write).

The only other valid commands while block erase is

suspended are Read Status Register and Block

Erase Resume. After a Block Erase Resume

command is written to the flash memory, the WSM

will continue the block erase process. Status

register bits SR.6 and SR.7 will automatically clear

and RY/BY# will return to VOL. After the Erase

Resume command is written, the device

automatically outputs status register data when

read (see Fig. 5). VPP must remain at VPPH1/2/3

(the same VPP level used for block erase) while

block erase is suspended. RP# must also remain at

VIH or VHH (the same RP# level used for block

erase). Block erase cannot resume until word write

operations initiated during block erase suspend

have completed.

4.9 Set Block and Permanent Lock-

Bit Commands

The combination of the software command

sequence and hardware RP# pin provides most

flexible block lock (write protection) capability. The

word write/block erase operation is restricted by the

status of block lock-bit, RP# pin and permanent

lock-bit. The status of RP# pin and permanent lock-

bit restricts the set block bit. When the permanent

lock-bit has not been set, and when RP# = VHH,

the block lock bit can be set with the status of the

RP# pin. When RP# = VHH, the permanent lock-bit

can be set with the permanent lock-bit set

command. After the permanent lock-bit has been

set, the write/erase operation to the block lock-bit

can never be accepted. Refer to Table 5 for the

hardware and the software write protection.

4.8 Word Write Suspend Command

The Word Write Suspend command allows word

write interruption to read data in other flash memory

locations. Once the word write process starts,

writing the Word Write Suspend command requests

that the WSM suspend the word write sequence at

a predetermined point in the algorithm. The device

continues to output status register data when read

after the Word Write Suspend command is written.

Polling status register bits SR.7 and SR.2 can

determine when the word write operation has been

suspended (both will be set to "1"). RY/BY# will

also transition to VOH. Specification tWHRH1 defines

the word write suspend latency.

Set block lock-bit and permanent lock-bit are

executed by a two-cycle command sequence. The

set block or permanent lock-bit setup along with

appropriate block or device address is written

followed by either the set block lock-bit confirm (and

an address within the block to be locked) or the set

permanent lock-bit confirm (and any device

address). The WSM then controls the set lock-bit

algorithm. After the sequence is written, the device

- 14 -

LH28F800SG-L (FOR SOP)

automatically outputs status register data when

read (see Fig. 7). The CPU can detect the

completion of the set lock-bit event by analyzing the

RY/BY# pin output or status register bit SR.7.

Clear block lock-bits option is executed by a two-

cycle command sequence. A clear block lock-bits

setup is first written. After the command is written,

the device automatically outputs status register data

when read (see Fig. 8). The CPU can detect

completion of the clear block lock-bits event by

analyzing the RY/BY# pin output or status register

bit SR.7.

When the set lock-bit operation is complete, status

register bit SR.4 should be checked. If an error is

detected, the status register should be cleared. The

CUI will remain in read status register mode until a

new command is issued.

When the operation is complete, status register bit

SR.5 should be checked. If a clear block lock-bits

error is detected, the status register should be

cleared. The CUI will remain in read status register

mode until another command is issued.

This two-step sequence of set-up followed by

execution ensures that lock-bits are not accidentally

set. An invalid Set Block or Permanent Lock-Bit

command will result in status register bits SR.4 and

SR.5 being set to "1". Also, reliable operations

occur only when VCC = VCC1/2/3/4 and VPP =

VPPH1/2/3. In the absence of this high voltage, lock-

bit contents are protected against alteration.

This two-step sequence of set-up followed by

execution ensures that block lock-bits are not

accidentally cleared. An invalid Clear Block Lock-

Bits command sequence will result in status register

bits SR.4 and SR.5 being set to "1". Also, a reliable

clear block lock-bits operation can only occur when

VCC = VCC1/2/3/4 and VPP = VPPH1/2/3. In a clear

block lock-bits operation is attempted while VPP ≤

VPPLK, SR.3 and SR.5 will be set to "1". In the

absence of this high voltage, the block lock-bit

A successful set block lock-bit operation requires

that the permanent lock-bit be cleared and RP# =

VHH. If it is attempted with the permanent lock-bit

set, SR.1 and SR.4 will be set to "1" and the

operation will fail. Set block lock-bit operations while

VIH < RP# < VHH produce spurious results and

should not be attempted. A successful set

permanent lock-bit operation requires that RP# =

VHH. If it is attempted with RP# = VIH, SR.1 and

SR.4 will be set to "1" and the operation will fail.

Set permanent lock-bit operations with VIH < RP# <

VHH produce spurious results and should not be

attempted.

contents are protected against alteration.

A

successful clear block lock-bits operation requires

that the permanent lock-bit is not set and RP# =

VHH. If it is attempted with the permanent lock-bit

set or RP# = VIH, SR.1 and SR.5 will be set to "1"

and the operation will fail. A clear block lock-bits

operation with VIH < RP# < VHH produce spurious

results and should not be attempted.

4.10 Clear Block Lock-Bits Command

All set block lock-bits are cleared in parallel via the

Clear Block Lock-Bits command. With the

permanent lock-bit not set and RP# = VHH, block

lock-bits can be cleared using the Clear Block Lock-

Bits command. If the permanent lock-bit is set, clear

block lock-bits operation is unable. See Table 5

for a summary of hardware and software write

protection options.

If a clear block lock-bits operation is aborted due to

VPP or VCC transition out of valid range or RP#

active transition, block lock-bit values are left in an

undetermined state. A repeat of clear block lock-bits

is required to initialize block lock-bit contents to

known values. Once the permanent lock-bit is set, it

cannot be cleared.

- 15 -

LH28F800SG-L (FOR SOP)

Table 5 Write Protection Alternatives

RP#

PERMANENT BLOCK

LOCK-BIT LOCK-BIT

OPERATION

EFFECT

X

0

1

0

1

X

0

VIH or VHH Block Erase and Word Write Enabled

Block Erase

or

Word Write

VHH

VIH

X

Block Lock-Bit Override. Block Erase and Word Write Enabled

Block is Locked. Block Erase and Word Write Disabled

Permanent Lock-Bit is set. Block Erase and Word Write Disabled

Set Block Lock-Bit Enabled

1

VHH

Set Block

Lock-Bit

X

VIH

Set Block Lock-Bit Disabled

X

VHH

VIH

Permanent Lock-Bit is set. Set Block Lock-Bit Disabled

Set Permanent Lock-Bit Enabled

Set Permanent Lock-Bit Disabled

Set Permanent

Lock-Bit

VHH

Clear Block Lock-Bits Enabled

Clear Block

Lock-Bits

0

1

VIH

Clear Block Lock-Bits Disabled

X

Permanent Lock-Bit is set. Clear Block Lock-Bits Disabled

Table 6 Status Register Definition

WSMS

7

ESS

6

ECLBS

WWSLBS

4

VPPS

3

WWSS

2

DPS

1

R

0

5

NOTES :

SR.7 = WRITE STATE MACHINE STATUS (WSMS)

Check RY/BY# or SR.7 to determine block erase, word

1 = Ready

0 = Busy

write, or lock-bit configuration completion.

SR.6-0 are invalid while SR.7 = "0".

SR.6 = ERASE SUSPEND STATUS (ESS)

1 = Block Erase Suspended

If both SR.5 and SR.4 are "1"s after a block erase or lock-bit

configuration attempt, an improper command sequence was

entered.

0 = Block Erase in Progress/Completed

SR.5 = ERASE AND CLEAR LOCK-BITS STATUS (ECLBS)

1 = Error in Block Erase or Clear Lock-Bits

SR.3 does not provide a continuous indication of VPP level.

The WSM interrogates and indicates the VPP level only after

Block Erase, Word Write, Set Block/Permanent Lock-Bit, or

Clear Block Lock-Bits command sequences. SR.3 is not

guaranteed to reports accurate feedback only when VPP ≠

VPPH1/2/3.

0 = Successful Block Erase or Clear Lock-Bits

SR.4 = WORD WRITE AND SET LOCK-BIT STATUS (WWSLBS)

1 = Error in Word Write or Set Permanent/Block Lock-Bit

0 = Successful Word Write or Set Permanent/Block Lock-Bit

SR.1 does not provide a continuous indication of permanent

and block lock-bit values. The WSM interrogates the

permanent lock-bit, block lock-bit, and RP# only after Block

Erase, Word Write, or Lock-Bit configuration command

sequences. It informs the system, depending on the attempted

operation, if the block lock-bit is set, permanent lock-bit is set,

and/or RP# is not VHH. Reading the block lock and permanent

lock configuration codes after writing the Read Identifier Codes

command indicates permanent and block lock-bit status.

SR.3 = VPP STATUS (VPPS)

1 = VPP Low Detect, Operation Abort

0 = VPP OK

SR.2 = WORD WRITE SUSPEND STATUS (WWSS)

1 = Word Write Suspended

0 = Word Write in Progress/Completed

SR.1 = DEVICE PROTECT STATUS (DPS)

1 = Permanent Lock-Bit, Block Lock-Bit and/or RP#

Lock Detected, Operation Abort

SR.0 is reserved for future use and should be masked out

when polling the status register.

0 = Unlock

SR.0 = RESERVED FOR FUTURE ENHANCEMENTS (R)

- 16 -

LH28F800SG-L (FOR SOP)

BUS

OPERATION

Start

COMMAND

COMMENTS

Data = 20H

Addr = Within Block to be Erased

Write

Erase Setup

Write 20H,

Block Address

Erase

Confirm

Data = D0H

Addr = Within Block to be Erased

Write

Read

Write D0H,

Block Address

Status Register Data

Check SR.7

Standby

1 = WSM Ready

0 = WSM Busy

Read

Status Register

Repeat for subsequent block erasures.

Suspend Block

Erase Loop

No

Suspend

Full status check can be done after each block erase or after

a sequence of block erasures.

0

SR.7 =

Block Erase

Yes

Write FFH after the last block erase operation to place device

in read array mode.

1

Full Status

Check if Desired

Block Erase

Complete

FULL STATUS CHECK PROCEDURE

Read Status Register

Data (See Above)

BUS

OPERATION

COMMAND

COMMENTS

Check SR.3

Standby

1 = VPP Error Detect

1

SR.3 =

0

VPP Range Error

Check SR.1

1 = Device Protect Detect

RP# = VIH, Block Lock-Bit is Set

Only required for systems

implementing lock-bit configuration

Standby

1

SR.1 =

0

Device Protect Error

Check SR.4, 5

Both 1 = Command Sequence Error

Standby

Check SR.5

1 = Block Erase Error

Command Sequence

Error

SR.4, 5 =

0

SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear

Status Register command in cases where multiple blocks

are erased before full status is checked.

If error is detected, clear the status register before attempting

retry or other error recovery.

1

Block Erase

Error

SR.5 =

0

Block Erase

Successful

Fig. 3 Automated Block Erase Flowchart

- 17 -

LH28F800SG-L (FOR SOP)

BUS

OPERATION

Start

COMMAND

COMMENTS

Setup

Data = 40H

Write

Word Write Addr = Location to be Written

Write 40H,

Address

Data = Data to be Written

Word Write

Write

Read

Addr = Location to be Written

Write Word

Data and Address

Status Register Data

Check SR.7

Standby

1 = WSM Ready

0 = WSM Busy

Read

Status Register

Repeat for subsequent word writes.

Suspend Word

Write Loop

SR full status check can be done after each word write or after

a sequence of word writes.

No

Suspend

0

Yes

SR.7 =

Word Write

Write FFH after the last word write operation to place device

in read array mode.

1

Full Status

Check if Desired

Word Write

Complete

FULL STATUS CHECK PROCEDURE

Read Status Register

Data (See Above)

BUS

OPERATION

COMMAND

COMMENTS

Check SR.3

Standby

1 = VPP Error Detect

1

SR.3 =

0

VPP Range Error

Check SR.1

1 = Device Protect Detect

RP# = VIH, Block Lock-Bit is Set

Only required for systems

implementing lock-bit configuration

Standby

1

SR.1 =

0

Device Protect Error

Word Write Error

Check SR.4

1 = Data Write Error

Standby

SR.4, SR.3 and SR.1 are only cleared by the Clear Status

Register command in cases where multiple locations are

written before full status is checked.

SR.4 =

0

If error is detected, clear the status register before attempting

retry or other error recovery.

Word Write

Successful

Fig. 4 Automated Word Write Flowchart

- 18 -

LH28F800SG-L (FOR SOP)

BUS

OPERATION

Start

COMMAND

COMMENTS

Erase

Suspend

Data = B0H

Addr = X

Write

Read

Write B0H

Status Register Data

Addr = X

Read

Check SR.7

Status Register

1 = WSM Ready

0 = WSM Busy

Standby

Check SR.6

1 = Block Erase Suspended

0 = Block Erase Completed

0

Standby

Write

SR.7 =

1

Erase

Resume

Data = D0H

Addr = X

0

Block Erase

Completed

SR.6 =

1

Read

or Word

Write?

Read

Word Write

Read Array Data

Word Write Loop

No

Done?

Yes

Write D0H

Write FFH

Block Erase

Resumed

Read

Array Data

Fig. 5 Block Erase Suspend/Resume Flowchart

- 19 -

LH28F800SG-L (FOR SOP)

BUS

OPERATION

Start

COMMAND

COMMENTS

Word Write Data = B0H

Write

Read

Suspend

Addr = X

Write B0H

Status Register Data

Addr = X

Read

Check SR.7

Status Register

1 = WSM Ready

0 = WSM Busy

Standby

Check SR.2

1 = Word Write Suspended

0 = Word Write Completed

0

SR.7 =

1

Data = FFH

Addr = X

Write

Read

Write

Read Array

Read array locations other

than that being written.

Word Write

Completed

SR.2 =

1

Word Write Data = D0H

Resume

Addr = X

Write FFH

Read

Array Data

No

Done

Reading

Yes

Write D0H

Write FFH

Read

Array Data

Word Write Resumed

Fig. 6 Word Write Suspend/Resume Flowchart

- 20 -

LH28F800SG-L (FOR SOP)

BUS

OPERATION

Start

COMMAND

COMMENTS

Set

Block/Permanent

Lock-Bit

Data = 60H

Addr = Block Address (Block),

Device Address (Permanent)

Write 60H,

Block/Device Address

Write

Setup

Set

Block or Permanent

Lock-Bit

Data = 01H (Block),

Write 01H/F1H,

Block/Device Address

F1H (Permanent)

Addr = Block Address (Block),

Device Address (Permanent)

Write

Confirm

Read

Status Register Data

Read

Status Register

Check SR.7

Standby

1 = WSM Ready

0 = WSM Busy

0

Repeat for subsequent lock-bit set operations.

SR.7 =

Full status check can be done after each lock-bit set

operation or after a sequence of lock-bit set operations.

1

Write FFH after the last lock-bit set operation to place device

in read array mode.

Full Status

Check if Desired

Set Lock-Bit

Complete

FULL STATUS CHECK PROCEDURE

Read Status Register

Data (See Above)

BUS

OPERATION

COMMAND

COMMENTS

Check SR.3

1 = VPP Error Detect

Standby

1

Check SR.1

1 = Device Protect Detect

RP# = VIH

(Set Permanent Lock-Bit Operation)

RP# = VIH or

SR.3 =

0

VPP Range Error

Standby

Permanent Lock-Bit is Set

(Set Block Lock-Bit Operation)

1

SR.1 =

0

Device Protect Error

Check SR.4, 5

Both 1 = Command Sequence Error

Standby

Check SR.4

1 = Set Lock-Bit Error

Command Sequence

Error

SR.4, 5 =

0

SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear

Status Register command in cases where multiple lock-bits are

set before full status is checked.

1

Set Lock-Bit

Error

SR.4 =

0

If error is detected, clear the status register before attempting

retry or other error recovery.

Set Lock-Bit

Successful

Fig. 7 Set Block and Permanent Lock-Bit Flowchart

- 21 -

LH28F800SG-L (FOR SOP)

BUS

OPERATION

Start

COMMAND

COMMENTS

Clear Block

Lock-Bits

Setup

Data = 60H

Addr = X

Write

Write 60H

Clear Block

Lock-Bits

Confirm

Data = D0H

Addr = X

Write

Write D0H

Read

Status Register Data

Read

Status Register

Check SR.7

1 = WSM Ready

0 = WSM Busy

Standby

Write FFH after the last clear block lock-bits operation to place

device in read array mode.

0

SR.7 =

1

Full Status

Check if Desired

Clear Block Lock-Bits

Complete

FULL STATUS CHECK PROCEDURE

Read Status Register

Data (See Above)

BUS

OPERATION

COMMAND

COMMENTS

Check SR.3

Standby

1 = VPP Error Detect

1

Check SR.1

1 = Device Protect Detect

RP# = VIH or

SR.3 =

0

VPP Range Error

Standby

Permanent Lock-Bit is Set

Check SR.4, 5

Both 1 = Command Sequence Error

1

Standby

SR.1 =

0

Device Protect Error

Check SR.5

1 = Clear Block Lock-Bits Error

SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear

Status Register command.

Command Sequence

Error

SR.4, 5 =

0

If error is detected, clear the status register before attempting

retry or other error recovery.

1

Clear Block Lock-Bits

Error

SR.5 =

0

Clear Block Lock-Bits

Successful

Fig. 8 Clear Block Lock-Bits Flowchart

- 22 -

LH28F800SG-L (FOR SOP)

5 DESIGN CONSIDERATIONS

issues; standby current levels, active current levels

and transient peaks produced by falling and rising

edges of CE# and OE#. Transient current

magnitudes depend on the device outputs’

capacitive and inductive loading. Two-line control

and proper decoupling capacitor selection will

suppress transient voltage peaks. Each device

should have a 0.1 µF ceramic capacitor connected

between its VCC and GND and between its VPP

and GND. These high-frequency, low inductance

capacitors should be placed as close as possible to

package leads. Additionally, for every eight devices,

a 4.7 µF electrolytic capacitor should be placed at

the array’s power supply connection between VCC

and GND. The bulk capacitor will overcome voltage

slumps caused by PC board trace inductance.

5.1 Three-Line Output Control

The device will often be used in large memory

arrays. SHARP provides three control inputs to

accommodate multiple memory connections. Three-

line control provides for :

a. Lowest possible memory power consumption.

b. Complete assurance that data bus contention

will not occur.

To use these control inputs efficiently, an address

decoder should enable CE# while OE# should be

connected to all memory devices and the system’s

READ# control line. This assures that only selected

memory devices have active outputs while

deselected memory devices are in standby mode.

RP# should be connected to the system

POWERGOOD signal to prevent unintended writes

during system power transitions. POWERGOOD

should also toggle during system reset.

5.4 VPP Trace on Printed Circuit Boards

Updating flash memories that reside in the target

system requires that the printed circuit board

designers pay attention to the VPP power supply

trace. The VPP pin supplies the memory cell current

for word writing and block erasing. Use similar trace

widths and layout considerations given to the VCC

power bus. Adequate VPP supply traces and

decoupling will decrease VPP voltage spikes and

overshoots.

5.2 RY/BY# and Block Erase, Word Write,

and Lock-Bit Configuration Polling

RY/BY# is a full CMOS output that provides a

hardware method of detecting block erase, word

write and lock-bit configuration completion. It

transitions low after block erase, word write, or lock-

bit configuration commands and returns to VOH

when the WSM has finished executing the internal

algorithm.

5.5 VCC, VPP, RP# Transitions

Block erase, word write and lock-bit configuration

are not guaranteed if VPP falls outside of a valid

VPPH1/2/3 range, VCC falls outside of a valid

VCC1/2/3/4 range, or RP# ≠ VIH or VHH. If VPP error

is detected, status register bit SR.3 is set to "1"

along with SR.4 or SR.5, depending on the

attempted operation. If RP# transitions to VIL during

block erase, word write, or lock-bit configuration,

RY/BY# will remain low until the reset operation is

complete. Then, the operation will abort and the

device will enter deep power-down. The aborted

operation may leave data partially altered.

Therefore, the command sequence must be

RY/BY# can be connected to an interrupt input of

the system CPU or controller. It is active at all

times. RY/BY# is also VOH when the device is in

block erase suspend (with word write inactive),

word write suspend or deep power-down modes.

5.3 Power Supply Decoupling

Flash memory power switching characteristics

require careful device decoupling. System

designers are interested in three supply current

- 23 -

LH28F800SG-L (FOR SOP)

repeated after normal operation is restored. Device

power-off or RP# transitions to VIL clear the status

register.

5.7 Power Consumption

When designing portable systems, designers must

consider battery power consumption not only during

device operation, but also for data retention during

system idle time. Flash memory’s nonvolatility

increases usable battery life because data is

retained when system power is removed.

The CUI latches commands issued by system

software and is not altered by VPP or CE#

transitions or WSM actions. Its state is read array

mode upon power-up, after exit from deep power-

down or after VCC transitions below VLKO.

In addition, deep power-down mode ensures

extremely low power consumption even when

system power is applied. For example, portable

computing products and other power sensitive

applications that use an array of devices for solid-

state storage can consume negligible power by

lowering RP# to VIL standby or sleep modes. If

access is again needed, the devices can be read

following the tPHQV and tPHWL wake-up cycles

required after RP# is first raised to VIH. See Section

6.2.4 through 6.2.6 "AC CHARACTERISTICS

- READ-ONLY and WRITE OPERATIONS" and

Fig. 13, Fig. 14 and Fig. 15 for more information.

After block erase, word write, or lock-bit

configuration, even after VPP transitions down to

VPPLK, the CUI must be placed in read array mode

via the Read Array command if subsequent access

to the memory array is desired.

5.6 Power-Up/Down Protection

The device is designed to offer protection against

accidental block erasure, word writing, or lock-bit

configuration during power transitions. Upon power-

up, the device is indifferent as to which power

supply (VPP or VCC) powers-up first. Internal

circuitry resets the CUI to read array mode at

power-up.

A system designer must guard against spurious

writes for VCC voltages above VLKO when VPP is

active. Since both WE# and CE# must be low for a

command write, driving either to VIH will inhibit

writes. The CUI’s two-step command sequence

architecture provides added level of protection

against data alteration.

In-system block lock and unlock capability prevents

inadvertent data alteration. The device is disabled

while RP# = VIL regardless of its control inputs

state.

- 24 -

LH28F800SG-L (FOR SOP)

6 ELECTRICAL SPECIFICATIONS

NOTICE : The specifications are subject to

change without notice. Verify with your local

SHARP sales office that you have the latest

datasheet before finalizing a design.

6.1 Absolute Maximum Ratings

Operating Temperature

During Read, Block Erase, Word Write

......

(NOTE 1)

WARNING : Stressing the device beyond the

"Absolute Maximum Ratings" may cause

permanent damage. These are stress ratings only.

Operation beyond the "Operating Conditions" is not

recommended and extended exposure beyond the

"Operating Conditions" may affect device reliability.

and Lock-Bit Configuration

0 to +70°C

.............

Temperature under Bias

–10 to +80°C

.......................

Storage Temperature

– 65 to +125°C

Voltage On Any Pin

(NOTE 2)

....

(except VCC, VPP, and RP#)

–2.0 to +7.0 V

NOTES :

1. Operating temperature is for commercial product defined

(NOTE 2)

.................

VCC Supply Voltage

–2.0 to +7.0 V

by this specification.

2. All specified voltages are with respect to GND. Minimum

DC voltage is –0.5 V on input/output pins and – 0.2 V on

VCC and VPP pins. During transitions, this level may

undershoot to –2.0 V for periods < 20 ns. Maximum DC

voltage on input/output pins and VCC is VCC+0.5 V

which, during transitions, may overshoot to VCC+2.0 V

for periods < 20 ns.

VPP Update Voltage during

Block Erase, Word Write and

(NOTE 2, 3)

..

Lock-Bit Configuration –2.0 to +14.0 V

RP# Voltage with Respect to

GND during Lock-Bit

3. Maximum DC voltage on VPP and RP# may overshoot

to +14.0 V for periods < 20 ns.

(NOTE 2, 3)

(NOTE 4)

..

Configuration Operations –2.0 to +14.0 V

4. Output shorted for no more than one second. No more

than one output shorted at a time.

..............

Output Short Circuit Current

100 mA

6.2 Operating Conditions

SYMBOL

PARAMETER

NOTE

MIN.

0

MAX.

+70

3.0

UNIT

˚C

V

VERSION

TA

Operating Temperature

1

VCC1

VCC2

VCC3

VCC4

VCC Supply Voltage (2.7 to 3.0 V)

VCC Supply Voltage (3.3±0.3 V)

VCC Supply Voltage (5.0±0.25 V)

VCC Supply Voltage (5.0±0.5 V)

2.7

3.0

3.6

V

4.75

4.50

5.25

5.50

V

LH28F800SG-L70

V

NOTE :

1. Test condition : Ambient temperature

6.2.1 CAPACITANCE ^{(NOTE 1)}

TA = +25˚C, f = 1 MHz

SYMBOL

PARAMETER

Input Capacitance

Output Capacitance

TYP.

MAX.

UNIT

CONDITION

CIN

7

9

10

12

pF

VIN = 0.0 V

COUT

VOUT = 0.0 V

NOTE :

1. Sampled, not 100% tested.

- 25 -

LH28F800SG-L (FOR SOP)

6.2.2 AC INPUT/OUTPUT TEST CONDITIONS

2.7

1.35

OUTPUT

INPUT

TEST POINTS

0.0

AC test inputs are driven at 2.7 V for a logic "1" and 0.0 V for a Logic "0". Input timing begins, and output timing

ends, at 1.35 V. Input rise and fall times (10% to 90%) < 10 ns.

Fig. 9 Transient Input/Output Reference Waveform for VCC = 2.7 to 3.0 V

3.0

1.5

INPUT

TEST POINTS

OUTPUT

0.0

AC test inputs are driven at 3.0 V for a Logic "1" and 0.0 V for a Logic "0". Input timing begins, and output

timing ends, at 1.5 V. Input rise and fall times (10% to 90%) < 10 ns.

Fig. 10 Transient Input/Output Reference Waveform for VCC = 3.3±0.3 V and

VCC = 5.0±0.25 V (High Speed Testing Configuration)

2.4

2.0

0.8

2.0

OUTPUT

0.8

INPUT

TEST POINTS

0.45

AC test inputs are driven at VOH (2.4 VTTL) for a Logic "1" and VOL (0.45 VTTL) for a Logic "0". Input timing

begins at VIH (2.0 VTTL) and VIL (0.8 VTTL). Output timing ends at VIH and VIL. Input rise and fall times (10% to

90%) < 10 ns.

Fig. 11 Transient Input/Output Reference Waveform for

VCC = 5.0±0.5 V (Standard Testing Configuration)

Test Configuration Capacitance Loading Value

1.3 V

TEST CONFIGURATION

VCC = 3.3±0.3 V, 2.7 to 3.0 V

VCC = 5.0±0.25 V ^{(NOTE 1)}

VCC = 5.0±0.5 V

CL (pF)

50

1N914

30

100

NOTE :

RL = 3.3 kΩ

1. Applied to high-speed product, LH28F800SG-L70.

DEVICE

UNDER

TEST

OUT

C^L

C^LIncludes Jig

Capacitance

Fig. 12 Transient Equivalent Testing Load Circuit

- 26 -

LH28F800SG-L (FOR SOP)

6.2.3 DC CHARACTERISTICS

V

CC = 2.7 to 3.6 V

V

CC = 5.0±0.5 V

TEST

UNIT

SYMBOL

PARAMETER

Input Load Current

NOTE

CONDITIONS

TYP.

MAX.

TYP.

MAX.

VCC = VCC Max.

µA

ILI

1

±0.5

±1

VIN = VCC or GND

VCC = VCC Max.

µA

ILO

Output Leakage Current

±0.5

100

±10

100

VOUT = VCC or GND

CMOS inputs

µA VCC = VCC Max.

CE# = RP# = VCC±0.2 V

TTL inputs

ICCS

ICCD

VCC Standby Current

1, 3, 6

2

mA VCC = VCC Max.

CE# = RP# = VIH

VCC Deep Power-Down

Current

RP# = GND±0.2 V

µA

1

12

16

IOUT (RY/BY#) = 0 mA

CMOS inputs

VCC = VCC Max.

CE# = GND

mA

25

30

50

65

f = 5 MHz (3.3 V, 2.7 V),

8 MHz (5 V)

IOUT = 0 mA

ICCR

VCC Read Current

1, 5, 6

TTL inputs

VCC = VCC Max.

CE# = GND

mA

f = 5 MHz (3.3 V, 2.7 V),

8 MHz (5 V)

IOUT = 0 mA

17

12

17

12

—

35

30

—

30

25

mA VPP = 2.7 to 3.6 V

mA VPP = 5.0±0.5 V

mA VPP = 12.0±0.6 V

mA VPP = 2.7 to 3.6 V

mA VPP = 5.0±0.5 V

mA VPP = 12.0±0.6 V

VCC Word Write or

Set Lock-Bit Current

ICCW

ICCE

1, 7

VCC Block Erase or

Clear Block Lock-Bits

Current

ICCWS VCC Word Write or Block

ICCES Erase Suspend Current

IPPS

1, 2

1

6

10

mA CE# = VIH

±15

200

±15

200

µA VPP ≤ VCC

V

PP Standby or Read Current

IPPR

µA VPP > VCC

VPP Deep Power-Down

Current

IPPD

1

5

µA RP# = GND±0.2 V

80

30

40

30

—

80

30

—

40

30

mA VPP = 2.7 to 3.6 V

mA VPP = 5.0±0.5 V

mA VPP = 12.0±0.6 V

mA VPP = 2.7 to 3.6 V

mA VPP = 5.0±0.5 V

mA VPP = 12.0±0.6 V

VPP Word Write or

Set Lock-Bit Current

IPPW

IPPE

1, 7

VPP Block Erase or

Clear Block Lock-Bits

Current

1, 7

1

IPPWS VPP Word Write or Block

IPPES Erase Suspend Current

200

µA VPP = VPPH1/2/3

- 27 -

LH28F800SG-L (FOR SOP)

6.2.3 DC CHARACTERISTICS (contd.)

V

CC = 2.7 to 3.6 V

V

CC = 5.0±0.5 V

TEST

UNIT

SYMBOL

VIL

PARAMETER

Input Low Voltage

NOTE

CONDITIONS

MIN.

–0.5

MAX.

0.8

MIN.

–0.5

MAX.

0.8

7

V

VCC

+0.5

VCC

+0.5

VIH

Input High Voltage

2.0

V

VCC = VCC Min.

VOL

Output Low Voltage

3, 7

0.4

0.45

V

IOL = 5.8 mA (VCC = 5 V),

IOL = 2.0 mA (VCC = 3.3 V, 2.7 V)

VCC = VCC Min.

OH = –2.5 mA (VCC = 5 V),

Output High Voltage

(TTL)

VOH1

2.4

I

IOH = –2.0 mA (VCC = 3.3 V, 2.7 V)

0.85

VCC

–0.4

0.85

VCC

–0.4

VCC = VCC Min.

IOH = –2.5 µA

VCC = VCC Min.

IOH = –100 µA

V

Output High Voltage

(CMOS)

VOH2

3, 7

4, 7

VPP Lockout Voltage during

Normal Operations

VPPLK

1.5

3.6

1.5

—

VPP Voltage during

VPPH1 Word Write, Block Erase

or Lock-Bit Operations

2.7

4.5

—

4.5

V

VPP Voltage during

VPPH2 Word Write, Block Erase

or Lock-Bit Operations

5.5

VPP Voltage during

VPPH3 Word Write, Block Erase

or Lock-Bit Operations

11.4

12.6

11.4

12.6

VLKO VCC Lockout Voltage

2.0

V

Set permanent lock-bit

Override block lock-bit

VHH

RP# Unlock Voltage

8

11.4

12.6

11.4

12.6

NOTES :

1. All currents are in RMS unless otherwise noted. Typical

values at nominal VCC voltage and TA = +25°C. These

currents are valid for all product versions (packages and

speeds).

5. Automatic Power Saving (APS) reduces typical ICCR to

1 mA at 5 V VCC and 3 mA at 2.7 to 3.6 V VCC in static

operation.

6. CMOS inputs are either VCC±0.2 V or GND±0.2 V. TTL

inputs are either VIL or VIH.

2. ICCWS and ICCES are specified with the device de-

selected. If reading or word writing in erase suspend

mode, the device’s current draw is the sum of ICCWS or

ICCES and ICCR or ICCW, respectively.

7. Sampled, not 100% tested.

8. Permanent lock-bit set operations are inhibited when

RP# = VIH. Block lock-bit configuration operations are

inhibited when the permanent lock-bit is set or RP# =

VIH. Block erases and word writes are inhibited when the

corresponding block lock-bit is set and RP# = VIH or the

permanent lock-bits is set. Block erase, word write, and

lock-bit configuration operations are not guaranteed with

VIH < RP# < VHH and should not be attempted.

3. Includes RY/BY#.

4. Block erases, word writes, and lock-bit configurations are

inhibited when VPP ≤ VPPLK, and not guaranteed in the

range between VPPLK (max.) and VPPH1 (min.), between

VPPH1 (max.) and VPPH2 (min.), between VPPH2 (max.)

and VPPH3 (min.), and above VPPH3 (max.).

- 28 -

LH28F800SG-L (FOR SOP)

6.2.4 AC CHARACTERISTICS - READ-ONLY OPERATIONS ^{(NOTE 1)}

• VCC = 2.7 to 3.0 V, TA = 0 to +70˚C

VERSIONS

LH28F800SG-L70

LH28F800SG-L10

UNIT

SYMBOL

tAVAV

tAVQV

tELQV

tPHQV

tGLQV

tELQX

tEHQZ

tGLQX

tGHQZ

PARAMETER

NOTE

MIN.

MAX.

MIN.

MAX.

Read Cycle Time

100

120

ns

Address to Output Delay

100

600

45

120

600

55

CE# to Output Delay

2

RP# High to Output Delay

OE# to Output Delay

2

3

CE# to Output in Low Z

0

CE# High to Output in High Z

OE# to Output in Low Z

45

20

55

25

OE# High to Output in High Z

Output Hold from Address, CE# or

OE# Change, Whichever Occurs First

tOH

3

0

ns

• VCC = 3.3±0.3 V, TA = 0 to +70˚C

VERSIONS

LH28F800SG-L70

LH28F800SG-L10

UNIT

SYMBOL

tAVAV

tAVQV

tELQV

tPHQV

tGLQV

tELQX

tEHQZ

tGLQX

tGHQZ

PARAMETER

Read Cycle Time

NOTE

MIN.

MAX.

MIN.

MAX.

85

100

ns

Address to Output Delay

CE# to Output Delay

85

100

600

45

2

RP# High to Output Delay

OE# to Output Delay

600

40

2

3

CE# to Output in Low Z

CE# High to Output in High Z

OE# to Output in Low Z

OE# High to Output in High Z

0

40

15

45

20

Output Hold from Address, CE# or

OE# Change, Whichever Occurs First

tOH

3

0

ns

NOTES :

1. See AC Input/Output Reference Waveform (Fig. 9 through Fig. 11) for maximum allowable input slew rate.

2. OE# may be delayed up to tELQV-tGLQV after the falling edge of CE# without impact on tELQV.

3. Sampled, not 100% tested.

- 29 -

LH28F800SG-L (FOR SOP)

6.2.4 AC CHARACTERISTICS - READ-ONLY OPERATIONS (contd.) ^{(NOTE 1)}

• VCC = 5.0±0.25 V, 5.0±0.5 V, TA = 0 to +70˚C

(NOTE 4)

VCC±0.25 V

LH28F800SG-L70

VERSIONS

(NOTE 5)

UNIT

VCC±0.5 V

LH28F800SG-L70 LH28F800SG-L10

SYMBOL

tAVAV

tAVQV

tELQV

tPHQV

tGLQV

tELQX

tEHQZ

tGLQX

tGHQZ

PARAMETER

NOTE MIN.

MAX.

MIN.

MAX.

MIN.

MAX.

Read Cycle Time

70

80

100

ns

Address to Output Delay

CE# to Output Delay

70

80

100

400

50

2

RP# High to Output Delay

OE# to Output Delay

400

40

400

45

2

3

CE# to Output in Low Z

CE# High to Output in High Z

OE# to Output in Low Z

OE# High to Output in High Z

Output Hold from Address,

CE# or OE# Change,

0

55

10

55

10

55

15

tOH

3

0

ns

Whichever Occurs First

NOTES :

1. See AC Input/Output Reference Waveform (Fig. 9

through Fig. 11) for maximum allowable input slew rate.

2. OE# may be delayed up to tELQV-tGLQV after the falling

edge of CE# without impact on tELQV.

5. See Fig. 11 "Transient Input/Output Reference

Waveform" and Fig. 12 "Transient Equivalent Testing

Load Circuit" (Standard Configuration) for testing

characteristics.

3. Sampled, not 100% tested.

4. See Fig. 10 "Transient Input/Output Reference

Waveform" and Fig. 12 "Transient Equivalent Testing

Load Circuit" (High Speed Configuration) for testing

characteristics.

- 30 -

LH28F800SG-L (FOR SOP)

Device

Data Valid

t_AVAV

Standby

Address Selection

V_IH

V_IL

Address Stable

ADDRESSES (A)

CE# (E)

V_IH

V_IL

t_EHQZ

V_IH

V_IL

OE# (G)

WE# (W)

t_GHQZ

t_ELQV

V_IH

V_IL

t_GLQV

t_GLQX

t_OH

t_ELQX

V_OH

V_OL

High Z

DATA (D/Q)

(DQ⁰- DQ¹⁵)

Valid Output

t_AVQV

V_CC

t_PHQV

V_IH

V_IL

RP# (P)

Fig. 13 AC Waveform for Read Operations

- 31 -

LH28F800SG-L (FOR SOP)

6.2.5 AC CHARACTERISTICS FOR WE#-CONTROLLED WRITE OPERATIONS ^{(NOTE 1)}

• VCC = 2.7 to 3.0 V, TA = 0 to +70˚C

VERSIONS

LH28F800SG-L70

LH28F800SG-L10

UNIT

SYMBOL

t_AVAV

PARAMETER

Write Cycle Time

NOTE

MIN.

100

1

MAX.

MIN.

120

1

MAX.

ns

µs

ns

t_PHWL

RP# High Recovery to WE# Going Low

CE# Setup to WE# Going Low

2

t_ELWL

10

50

100

50

5

10

50

100

50

5

t_WLWHWE# Pulse Width

tPHHWH RP# VHH Setup to WE# Going High

2

3

tVPWH

VPP Setup to WE# Going High

t_AVWHAddress Setup to WE# Going High

t_DVWHData Setup to WE# Going High

t_WHDXData Hold from WE# High

t_WHAXAddress Hold from WE# High

t_WHEHCE# Hold from WE# High

t_WHWLWE# Pulse Width High

5

10

30

10

30

tWHRL

tWHGL

tQVVL

tQVPH

WE# High to RY/BY# Going Low

Write Recovery before Read

100

0

VPP Hold from Valid SRD, RY/BY# High

2, 4

RP# VHH Hold from Valid SRD, RY/BY# High 2, 4

• VCC = 3.3±0.3 V, TA = 0 to +70˚C

VERSIONS

PARAMETER

Write Cycle Time

LH28F800SG-L70

LH28F800SG-L10

UNIT

SYMBOL

tAVAV

NOTE

MIN.

85

1

MAX.

MIN.

100

1

MAX.

ns

µs

ns

tPHWL

tELWL

RP# High Recovery to WE# Going Low

CE# Setup to WE# Going Low

2

10

50

100

50

5

10

50

100

50

5

tWLWH WE# Pulse Width

tPHHWH RP# VHH Setup to WE# Going High

2

3

tVPWH

tAVWH

tDVWH

tWHDX

tWHAX

tWHEH

VPP Setup to WE# Going High

Address Setup to WE# Going High

Data Setup to WE# Going High

Data Hold from WE# High

Address Hold from WE# High

CE# Hold from WE# High

5

10

30

10

30

tWHWL WE# Pulse Width High

tWHRL

tWHGL

tQVVL

tQVPH

WE# High to RY/BY# Going Low

100

Write Recovery before Read

0

VPP Hold from Valid SRD, RY/BY# High

RP# VHH Hold from Valid SRD, RY/BY# High

2, 4

NOTES :

1. Read timing characteristics during block erase, word

write and lock-bit configuration operations are the same

as during read-only operations. Refer to Section 6.2.4

"AC CHARACTERISTICS" for read-only operations.

2. Sampled, not 100% tested.

3. Refer to Table 3 for valid AIN and DIN for block erase,

word write, or lock-bit configuration.

4. VPP should be held at VPPH1/2/3 (and if necessary RP#

should be held at VHH) until determination of block erase,

word write, or lock-bit configuration success (SR.1/3/4/5 = 0).

- 32 -

LH28F800SG-L (FOR SOP)

6.2.5 AC CHARACTERISTICS FOR WE#-CONTROLLED WRITE OPERATIONS (contd.) ^{(NOTE 1)}

• VCC = 5.0±0.25 V, 5.0±0.5 V, TA = 0 to +70˚C

(NOTE 5)

VCC±0.25 V

LH28F800SG-L70

VERSIONS

(NOTE 6)

UNIT

VCC±0.5 V

LH28F800SG-L70

LH28F800SG-L10

SYMBOL

PARAMETER

NOTE MIN.

MAX.

MIN.

MAX.

MIN.

MAX.

t_AVAV

Write Cycle Time

RP# High Recovery to WE#

Going Low

70

80

100

ns

µs

tPHWL

2

1

t_ELWL

CE# Setup to WE# Going Low

10

40

100

40

5

10

40

100

40

5

10

40

100

40

5

ns

t_WLWHWE# Pulse Width

t_PHHWHRP# V_HHSetup to WE# Going High

t_VPWHV_PPSetup to WE# Going High

2

3

t_AVWH

Address Setup to WE# Going High

t_DVWHData Setup to WE# Going High

t_WHDXData Hold from WE# High

t_WHAXAddress Hold from WE# High

t_WHEHCE# Hold from WE# High

t_WHWLWE# Pulse Width High

5

10

30

10

30

10

30

t_WHRL

WE# High to RY/BY# Going Low

90

t_WHGLWrite Recovery before Read

0

V_PPHold from Valid SRD,

tQVVL

2, 4

ns

RY/BY# High

RP# V_HHHold from Valid SRD,

tQVPH

0

RY/BY# High

NOTES :

1. Read timing characteristics during block erase, word

write and lock-bit configuration operations are the same

as during read-only operations. Refer to Section 6.2.4

"AC CHARACTERISTICS" for read-only operations.

2. Sampled, not 100% tested.

5. See Fig. 10 "Transient Input/Output Reference

Waveform" and Fig. 12 "Transient Equivalent Testing

Load Circuit" (High Speed Configuration) for testing

characteristics.

6. See Fig. 11 "Transient Input/Output Reference

Waveform" and Fig. 12 "Transient Equivalent Testing

Load Circuit" (Standard Configuration) for testing

characteristics.

3. Refer to Table 3 for valid AIN and DIN for block erase,

word write, or lock-bit configuration.

4. VPP should be held at VPPH1/2/3 (and if necessary RP#

should be held at VHH) until determination of block erase,

word write, or lock-bit configuration success (SR.1/3/4/5 = 0).

- 33 -

LH28F800SG-L (FOR SOP)

(NOTE 1)

(NOTE 2)

(NOTE 3)

AIN

(NOTE 4)

(NOTE 5)

(NOTE 6)

VIH

VIL

VIH

VIL

ADDRESSES (A)

CE# (E)

AIN

t^AVAV

tAVWH

tWHAX

tELWL

tWHEH

tWHGL

VIH

VIL

VIH

VIL

OE# (G)

tWHWL

tWHQV1/2/3/4

WE# (W)

tWLWH

tDVWH

tWHDX

High Z

VIH

VIL

Valid

SRD

DIN

tWHRL

D^IN

DATA (D/Q)

RY/BY# (R)

t^PHWL

VOH

VOL

tPHHWH

tQVPH

VHH

RP# (P) VIH

VIL

tVPWH

tQVVL

VPPH1/2/3

VPP (V) VPPLK

VIL

NOTES :

1. VCC power-up and standby.

2. Write block erase or word write setup.

3. Write block erase confirm or valid address and data.

4. Automated erase or program delay.

5. Read status register data.

6. Write Read Array command.

Fig. 14 AC Waveform for WE#-Controlled Write Operations

- 34 -

LH28F800SG-L (FOR SOP)

6.2.6 AC CHARACTERISTICS FOR CE#-CONTROLLED WRITES OPERATIONS ^{(NOTE 1)}

• VCC = 2.7 to 3.0 V, TA = 0 to +70˚C

VERSIONS

LH28F800SG-L70

LH28F800SG-L10

UNIT

SYMBOL

t_AVAV

PARAMETER

Write Cycle Time

NOTE

MIN.

100

1

MAX.

MIN.

120

1

MAX.

ns

µs

ns

t_PHEL

RP# High Recovery to CE# Going Low

WE# Setup to CE# Going Low

CE# Pulse Width

2

t_WLEL

0

t_ELEH

70

100

50

5

70

100

50

5

t_PHHEHRP# V_HHSetup to CE# Going High

2

3

t_VPEH

t_AVEH

t_DVEH

t_EHDX

t_EHAX

V_PPSetup to CE# Going High

Address Setup to CE# Going High

Data Setup to CE# Going High

Data Hold from CE# High

Address Hold from CE# High

5

t_EHWHWE# Hold from CE# High

0

t_EHEL

t_EHRL

t_EHGL

t_QVVL

tQVPH

CE# Pulse Width High

25

CE# High to RY/BY# Going Low

Write Recovery before Read

V_PPHold from Valid SRD, RY/BY# High

100

0

2, 4

RP# VHH Hold from Valid SRD, RY/BY# High 2, 4

• VCC = 3.3±0.3 V, TA = 0 to +70˚C

VERSIONS

LH28F800SG-L70

LH28F800SG-L10

UNIT

SYMBOL

t_AVAV

PARAMETER

Write Cycle Time

NOTE

MIN.

85

1

MAX.

MIN.

100

1

MAX.

ns

µs

ns

t_PHEL

RP# High Recovery to CE# Going Low

WE# Setup to CE# Going Low

CE# Pulse Width

2

t_WLEL

0

t_ELEH

70

100

50

5

70

100

50

5

t_PHHEHRP# V_HHSetup to CE# Going High

2

3

t_VPEH

t_AVEH

t_DVEH

t_EHDX

t_EHAX

V_PPSetup to CE# Going High

Address Setup to CE# Going High

Data Setup to CE# Going High

Data Hold from CE# High

Address Hold from CE# High

5

t_EHWHWE# Hold from CE# High

0

t_EHEL

t_EHRL

t_EHGL

t_QVVL

tQVPH

CE# Pulse Width High

25

CE# High to RY/BY# Going Low

Write Recovery before Read

V_PPHold from Valid SRD, RY/BY# High

100

0

2, 4

RP# VHH Hold from Valid SRD, RY/BY# High 2, 4

NOTES :

1. In systems where CE# defines the write pulse width

(within a longer WE# timing waveform), all setup, hold,

and inactive WE# times should be measured relative to

the CE# waveform.

3. Refer to Table 3 for valid AIN and DIN for block erase,

word write, or lock-bit configuration.

4. VPP should be held at VPPH1/2/3 (and if necessary RP#

should be held at VHH) until determination of block erase,

word write, or lock-bit configuration success (SR.1/3/4/5 = 0).

2. Sampled, not 100% tested.

- 35 -

LH28F800SG-L (FOR SOP)

6.2.6 AC CHARACTERISTICS FOR CE#-CONTROLLED WRITES OPERATIONS (contd.) ^{(NOTE 1)}

• VCC = 5.0±0.25 V, 5.0±0.5 V, TA = 0 to +70˚C

(NOTE 5)

VCC±0.25 V

LH28F800SG-L70

VERSIONS

UNIT

(NOTE 6)

VCC±0.5 V

LH28F800SG-L70 LH28F800SG-L10

SYMBOL

PARAMETER

NOTE MIN.

MAX.

MIN.

MAX.

MIN.

MAX.

t_AVAV

Write Cycle Time

RP# High Recovery to CE#

Going Low

70

80

100

ns

µs

tPHEL

2

1

t_WLEL

t_ELEH

WE# Setup to CE# Going Low

CE# Pulse Width

0

50

100

40

5

0

50

100

40

5

0

50

100

40

5

ns

t_PHHEHRP# VHH Setup to CE# Going High

2

3

t_VPEH

t_AVEH

t_DVEH

t_EHDX

t_EHAX

VPP Setup to CE# Going High

Address Setup to CE# Going High

Data Setup to CE# Going High

Data Hold from CE# High

Address Hold from CE# High

5

t_EHWHWE# Hold from CE# High

0

t_EHEL

t_EHRL

t_EHGL

CE# Pulse Width High

CE# High to RY/BY# Going Low

Write Recovery before Read

VPP Hold from Valid SRD,

RY/BY# High

25

90

0

tQVVL

2, 4

ns

RP# VHH Hold from Valid SRD,

RY/BY# High

tQVPH

0

NOTES :

1. In systems where CE# defines the write pulse width

(within a longer WE# timing waveform), all setup, hold,

and inactive WE# times should be measured relative to

the CE# waveform.

5. See Fig. 10 "Transient Input/Output Reference

Waveform" and Fig. 12 "Transient Equivalent Testing

Load Circuit" (High Speed Configuration) for testing

characteristics.

2. Sampled, not 100% tested.

6. See Fig. 11 "Transient Input/Output Reference

Waveform" and Fig. 12 "Transient Equivalent Testing

Load Circuit" (Standard Configuration) for testing

characteristics.

3. Refer to Table 3 for valid AIN and DIN for block erase,

word write, or lock-bit configuration.

4. VPP should be held at VPPH1/2/3 (and if necessary RP#

should be held at VHH) until determination of block erase,

word write, or lock-bit configuration success (SR.1/3/4/5 = 0).

- 36 -

LH28F800SG-L (FOR SOP)

(NOTE 1)

(NOTE 2)

(NOTE 3)

A^IN

(NOTE 4)

(NOTE 5)

(NOTE 6)

VIH

VIL

VIH

VIL

ADDRESSES (A)

WE# (W)

A^IN

t^AVAV

tAVEH

tEHAX

tEHWH

tWLEL

tEHGL

VIH

VIL

VIH

VIL

OE# (G)

tEHEL

tEHQV1/2/3/4

CE# (E)

tELEH

tDVEH

tEHDX

High Z

VIH

VIL

Valid

SRD

D^IN

DIN

DATA (D/Q)

RY/BY# (R)

t^PHEL

tEHRL

VOH

VOL

tPHHEH

tQVPH

VHH

RP# (P) VIH

VIL

tVPEH

tQVVL

VPPH1/2/3

VPP (V) VPPLK

VIL

NOTES :

1. VCC power-up and standby.

2. Write block erase or word write setup.

3. Write block erase confirm or valid address and data.

4. Automated erase or program delay.

5. Read status register data.

6. Write Read Array command.

Fig. 15 AC Waveform for CE#-Controlled Write Operations

- 37 -

LH28F800SG-L (FOR SOP)

6.2.7 RESET OPERATIONS

VOH

RY/BY# (R)

VOL

VIH

RP# (P)

VIL

t^PLPH

(A) Reset During Read Array Mode

VOH

RY/BY# (R)

VOL

t^PLRH

VIH

RP# (P)

VIL

tPLPH

(B) Reset During Block Erase, Word Write, or Lock-Bit Configuration

2.7 V/3.3 V/5 V

VCC

VIL

t235VPH

VIH

RP# (P)

VIL

(C) V^CCRising Timing

Fig. 16 AC Waveform for Reset Operation

Reset AC Specifications ^{(NOTE 1)}

VCC = 2.7 to 3.6 V

VCC = 5.0±0.5 V

SYMBOL

PARAMETER

NOTE

UNIT

MIN.

MAX.

MIN.

MAX.

RP# Pulse Low Time (If RP# is tied to VCC,

this specification is not applicable)

RP# Low to Reset during Block Erase,

Word Write, or Lock-Bit Configuration

VCC 2.7 V to RP# High

tPLPH

100

ns

20

tPLRH

2, 3

4

12

µs

ns

28 (2.7 V VCC

)

t235VPH VCC 3.0 V to RP# High

VCC 4.5 V to RP# High

100

NOTES :

1. These specifications are valid for all product versions

3. A reset time, tPHQV, is required from the latter of RY/BY#

or RP# going high until outputs are valid.

(packages and speeds).

2. If RP# is asserted while a block erase, word write, or

lock-bit configuration operation is not executing, the reset

will complete within 100 ns.

4. When the device power-up, holding RP#-low minimum

100 ns is required after VCC has been in predefined

range and also has been in stable there.

- 38 -

LH28F800SG-L (FOR SOP)

6.2.8 BLOCK ERASE, WORD WRITE AND LOCK-BIT CONFIGURATION PERFORMANCE ^{(NOTE 3, 4)}

• VCC = 2.7 to 3.0 V, TA = 0 to +70˚C

VPP = 2.7 to 3.0 V

MIN. TYP.^{(NOTE 1)}MAX. MIN. TYP.^{(NOTE 1)}MAX. MIN. TYP.^{(NOTE 1)}MAX.

VPP = 5.0±0.5 V

VPP = 12.0±0.6 V

SYMBOL

PARAMETER

NOTE

UNIT

tWHQV1

tEHQV1

Word Write Time

Block Write Time

Block Erase Time

2

49

63

2.1

3.0

20

28

1.0

2.0

15.4

0.56

1.9

µs

s

1.7

0.7

tWHQV2

tEHQV2

tWHQV3

tEHQV3

s

Set Lock-Bit Time

2

44

28

24.4

2.3

µs

s

tWHQV4 Clear Block Lock-Bits

tEHQV4 Time

3.8

2.6

tWHRH1 Word Write Suspend

tEHRH1 Latency Time to Read

tWHRH2 Erase Suspend Latency

12.6

34.1

10.5

20.2

10.5

20.2

µs

• VCC = 3.3±0.3 V, TA = 0 to +70˚C

VPP = 3.3±0.3 V

VPP = 5.0±0.5 V

VPP = 12.0±0.6 V

SYMBOL

PARAMETER

NOTE

UNIT

MIN. TYP.^{(NOTE 1)}MAX. MIN. TYP.^{(NOTE 1)}MAX. MIN. TYP.^{(NOTE 1)}MAX.

tWHQV1

tEHQV1

Word Write Time

Block Write Time

Block Erase Time

2

35

45

1.5

2.1

14

20

0.7

1.4

11

0.4

1.3

µs

s

1.2

0.5

tWHQV2

tEHQV2

tWHQV3

tEHQV3

s

Set Lock-Bit Time

2

31

2.7

9

20

1.8

17.4

1.6

µs

s

tWHQV4 Clear Block Lock-Bits

tEHQV4 Time

tWHRH1 Word Write Suspend

tEHRH1 Latency Time to Read

tWHRH2 Erase Suspend Latency

7.5

µs

24.3

14.4

NOTES :

1. Typical values measured at TA = +25˚C and nominal

voltages. Assumes corresponding lock-bits are not set.

Subject to change based on device characterization.

2. Excludes system-level overhead.

3. These performance numbers are valid for all speed

versions.

4. Sampled, not 100% tested.

- 39 -

LH28F800SG-L (FOR SOP)

6.2.8 BLOCK ERASE, WORD WRITE AND LOCK-BIT CONFIGURATION PERFORMANCE (contd.) ^{(NOTE 3, 4)}

• VCC = 5.0±0.25 V, 5.0±0.5 V, TA = 0 to +70˚C

VPP = 5.0±0.5 V

MIN. TYP.^{(NOTE 1)}MAX. MIN. TYP.^{(NOTE 1)}MAX.

VPP = 12.0±0.6 V

SYMBOL

PARAMETER

Word Write Time

NOTE

UNIT

t_WHQV1

t_EHQV1

2

10

14

0.5

1.3

7.5

0.25

1.2

µs

s

Block Write Time

Block Erase Time

0.4

t_WHQV2

t_EHQV2

t_WHQV3

t_EHQV3

t_WHQV4

t_EHQV4

t_WHRH1

t_EHRH1

t_WHRH2

t_EHRH2

s

Set Lock-Bit Time

2

18

1.6

15

1.5

6

µs

s

Clear Block Lock-Bits Time

Word Write Suspend Latency Time to Read

Erase Suspend Latency Time to Read

7.5

µs

14.4

NOTES :

1. Typical values measured at TA = +25˚C and nominal

voltages. Assumes corresponding lock-bits are not set.

Subject to change based on device characterization.

2. Excludes system-level overhead.

3. These performance numbers are valid for all speed

versions.

4. Sampled, not 100% tested.

- 40 -

LH28F800SG-L (FOR SOP)

7 ORDERING INFORMATION

Product line designator for all SHARP Flash products

L

H 2 8 F 8 0 0 S G N - L 7 0

Device Density

800 = 8 M-bit

Access Speed (ns)

70 : 70 ns (5.0±0.25 V), 80 ns (5.0±0.5 V),

85 ns (3.3±0.3 V), 100 ns (2.7 to 3.0 V)

10 : 100 ns (5.0±0.5 V), 100 ns (3.3±0.3 V),

120 ns (2.7 to 3.0 V)

Architecture

S = Symmetrical Block

Power Supply Type

G = SmartVoltage Technology

Package

N = 44-pin SOP (SOP044-P-0600)

Operating Temperature = 0 to 70°C

VALID OPERATIONAL COMBINATIONS

V^CC= 2.7 to 3.0 V

50 pF load,

1.35 V I/O Levels

100 ns

V^CC= 3.3±0.3 V

50 pF load,

1.5 V I/O Levels

85 ns

V^CC= 5.0±0.5 V

100 pF load,

TTL I/O Levels

80 ns

V^CC= 5.0±0.25 V

30 pF load,

1.5 V I/O Levels

70 ns

OPTION

ORDER CODE

1

2

LH28F800SGN-L70

LH28F800SGN-L10

120 ns

100 ns

- 41 -

PACKAGING

44 SOP (SOP044-P-0600)

_

TYP.

±0.1

0.15

M

1.27

44 0.4

44

23

1

22

±0.2

28.2

±0.05

0.15

Package base plane

0.1


型号：	LH28F800SG
厂家：	SHARP ELECTRIONIC COMPONENTS
描述：	8 M-bit (512 kB x 16) SmartVoltage Flash Memory 8 M位（ 512 KB ×16 ） SmartVoltage闪存闪存存储内存集成电路
文件：	总42页 (文件大小：285K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

LH28F800SG [SHARP]

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