LT140A [SHARP]
Hall Voltage 160mV Thin-Type Package GaAs Hall Device; 霍尔电压160mV的薄型封装砷化镓霍尔器件
| 型号： | LT140A |
| 厂家： | 
SHARP ELECTRIONIC COMPONENTS |
| 描述： | Hall Voltage 160mV Thin-Type Package GaAs Hall Device |
| 文件： | 总2页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Hall Device
LT140A
Hall Voltage 160mV Thin-Type Package GaAs Hall Device
LT140A
(Unit : mm)
■ Features
■ Outline Dimensions
¡
¡
¡
¡
Small temperature coefficient of the Hall voltage
Good linearity of the Hall voltage
Small imbalanced voltage
0.3
1
0.3
4
0.6
Directly DC voltage applicable
0.05±0.05
■ Applications
Silver Mark
¡
Brushless motors
VCR, CD, CD-ROM, FDD
¡
Measuring equipment
2
0.3
3
0.3
Gauss meters, magnetic substance detectors
¡
Noncontact sensors
0.9
1.45
Microswitches, tape-end detection
¡
Other magnetic detection
Terminal connection
1.40
+
+
-
1 :
2 :
3 :
4 :
VC
VH
VC
VH
Input
Output
Input
■ Absolute Maximum Ratings
(T
Rating
12
15
a
=25˚C)
-
Output
Parameter
Control voltage
Symbol
Unit
V
C
V
mA
mW
˚C
˚C
˚C
Control current
I
C
Power dissipation
P
D
150
Operating temperature
Storage temperature
Soldering temperature*1
*1 Soldering time : 10 seconds
T
T
T
opr
-20 to +125
-55 to +150
260
As for dimensions of tape-packaged products, refer to page 44 .
stg
sol
■ Electrical Characteristics
(T
a=25˚C)
Parameter
No-load Hall voltage *1
Symbol
Conditions
=6V, B=100mT
MIN.
145
2
-5
-2
TYP.
160
-
-
-
MAX.
175
12
5
-12
Unit
mV
V
H
V
C
C
Rank A
Rank B
Rank C
Imbalanced ratio *2
VHO/V
H
V
=6V,(B=0)/(B=100mT)
%
Input resistance
Output resistance
R
IN
I
M
=1mA, B=0mT
650
1 300
800
1 600
950
1 900
Ω
Ω
ROUT
IM=1mA, B=0mT
V
C
=6V, B=0mT, T
=6V, B=0mT, T
a
a
=-20˚C to 25˚C
=25˚C to 125˚C
Drift of imbalanced voltage vs. temperature
|∆VHO
|
-
5
-
mV
V
C
Temperature coefficient of Hall voltage
Temperature coefficient of input resistance
Linearity of Hall voltage
β
α
γ
I
I
I
C
=6mA, B=100mT, T
1
=-20˚C, T
2
=125˚C
-
-
-
-0.04
0.2
0.3
-
-
-
%/˚C
%/˚C
%
M
=1mA, B=0mT, T =-20˚C, T2
1
=125˚C
C
=6mA, B
1
=50mT, B
2
=100mT
*1 No-load Hall voltage is nearly proportional to Vc (within the range of 1 to 6V) at temperatures of -20˚C to + 125˚C.
Keep the voltage within the allowable power dissipation range.
*2 Imbalanced ratio is in +/-12% within the range of Vc=1 to 6V.
V
H
=VM
-VHO
1
{V
H
(T
(T
{RIN(T
(T
)}
)}
2
)-V
H
(T1)}
β=
α=
X100
X100
V
M
:Observed Hall voltage
HO:Imbalanced voltage
:Sensitivity
X
V
H
(T
1
1
)
2
-T
1
)
2
)-RIN(T
-T
1
)}
X
V
RIN(T
1
)
2
1)
{K
{K
H
(B
(B
2
)-K
)+K
H
(B
1
V
H
X2X100,
γ=
K
H
=
K
H
H
1
H
(B
2
(IC
XB)
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices
shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device spcification sheets before using any SHARP device.
Hall Device
LT140A
Fig. 1 Hall Voltage vs. Ambient
Temperature
Fig. 2 Input Resistance vs. Ambient
Temperature
200
2 000
1 600
1 200
800
B=100mT
=6V
B=0mT
IM=1mA
V
C
160
120
80
IC=6mA
40
400
0
0
-20
0
40
80
120
-20
0
40
80
120
Ambient temperature T
a
(˚C)
Ambient temperature T
a
(˚C)
Fig. 3 Hall Voltage vs. Magnetic Flux
Density
Fig. 4 Hall Voltage vs. Control Current
400
2 000
B=100mT
VC=6V
Ta=25˚C
320
Ta=25˚C
1 600
1 200
800
240
160
80
400
0
0
0
4
8
12
0
200
400
600
800 1 000
Control current IC (mA)
Magnetic flux density B (mT)
Fig. 6 Power Dissipation vs. Ambient
Temperature
Fig. 5 Hall Voltage vs. Control Voltage
400
200
160
120
80
B=100mT
Ta=25˚C
320
240
160
80
40
0
0
0
4
8
12
(V)
0
40
80
120
160
(˚C)
200
Control voltage V
C
Ambient temperature T
a
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