LZ2325A [SHARP]
Dual-power-supply (5 V/12 V) Operation 1/3-type CCD Area Sensors with 320 k Pixels; 双电源（5V / 12V）操作三分之一型CCD传感器面积为320的k个像素
| 型号： | LZ2325A |
| 厂家： | 
SHARP ELECTRIONIC COMPONENTS |
| 描述： | Dual-power-supply (5 V/12 V) Operation 1/3-type CCD Area Sensors with 320 k Pixels |
| 文件： | 总14页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LZ2325A/LZ2326AR
Dual-power-supply (5 V/12 V) Operation
1/3-type CCD Area Sensors with 320 k Pixels
LZ2325A/
LZ2326AR
DESCRIPTION
PIN CONNECTIONS
The LZ2325A/LZ2326AR are 1/3-type (6.0 mm)
solid-state image sensors that consist of PN photo-
diodes and CCDs (charge-coupled devices) driven
by dual-power-supply. With approximately 320 000
pixels (542 horizontal x 582 vertical), the sensor
provides a stable high-resolution color (LZ2325A)/
B/W (LZ2326AR) normal or mirror image.
16-PIN SHRINK-PITCH WDIP
TOP VIEW
ØRS
RD
1
2
3
4
5
6
7
8
16 T1
15 OFD
14 ØTG
13 ØV2
12 ØV1
11 ØV4
10 ØV3
GND
OS
FEATURES
OD
• Number of effective pixels : 512 (H) x 582 (V)
• Number of optical black pixels
– Horizontal : 2 front and 28 rear
• Pixel pitch : 9.6 µm (H) x 6.3 µm (V)
• Mg, G, Cy, and Ye complementary color filters
(For LZ2325A)
ØH2B
ØH2
ØH1B
9
ØH1
• Low fixed-pattern noise and lag
• No burn-in and no image distortion
• Blooming suppression structure
• Built-in output amplifier
• Built-in pulse mix circuit
• Built-in overflow drain voltage circuit and reset
gate voltage circuit
(WDIP016-N-0500C)
PRECAUTIONS
• The exit pupil position of lens should be more
than 25 mm (LZ2325A)/20 mm (LZ2326AR) from
the top surface of the CCD.
• Variable electronic shutter (1/50 to 1/10 000 s)
• Normal or mirror image output available from
common output pin
• Refer to "PRECAUTIONS FOR CCD AREA
SENSORS" for details.
• Compatible with PAL standard (LZ2325A)/
CCIR standard (LZ2326AR)
• Package :
16-pin shrink-pitch WDIP [Ceramic]
(WDIP016-N-0500C)
Row space : 12.70 mm
COMPARISON TABLE
LZ2325A
PAL standard (Color)
LZ2326AR
CCIR standard (B/W)
TV standard
Characteristics
Refer to each following specification.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in
catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
LZ2325A/LZ2326AR
PIN DESCRIPTION
SYMBOL
PIN NAME
Reset transistor drain
NOTE
RD
OD
OS
Output transistor drain
Output signals
ØRS
Reset transistor clock
Vertical shift register clock
Horizontal shift register clock
Transfer gate clock
Overflow drain
1
2
ØV1, ØV2, ØV3, ØV4
ØH1, ØH2, ØH1B, ØH2B
ØTG
OFD
GND
T1
3
1
Ground
Test pin
NOTES :
1. ØRS, OFD : Use the circuit parameter indicated in "SYSTEM CONFIGURATION
EXAMPLE", and do not connect to DC voltage directly. When not using electronic shutter,
connect OFD to GND through a 0.1 µF capacitor and a 1 M$ resistor.
2. ØV1-ØV4 : Input the clock through a 0.1 µF capacitor.
3. ØTG : Use the circuit parameter indicated in "SYSTEM CONFIGURATION EXAMPLE".
ABSOLUTE MAXIMUM RATINGS
(TA = +25 ˚C)
UNIT NOTE
V
V
PARAMETER
Output transistor drain voltage
Reset transistor drain voltage
Overflow drain voltage
SYMBOL
VOD
VRD
VOFD
VT1
VØRS
VØV
VØH
VØTG
TSTG
TOPR
RATING
0 to +15
0 to +15
Internal output
0 to +15
Internal output
0 to +7.5
–0.3 to +7.5
–0.3 to +15
–40 to +85
–20 to +70
V
V
V
1
2
Test pin, T1
Reset gate clock voltage
Vertical shift register clock voltage
Horizontal shift register clock voltage
Transfer gate clock voltage
Storage temperature
V
V
V
˚C
˚C
Ambient operating temperature
NOTES :
1. Do not connect to DC voltage directly. When OFD is connected to GND, connect VOD to GND. Overflow drain clock is
applied below 13 Vp-p.
2. Do not connect to DC voltage directly. When ØRS is connected to GND, connect VOD to GND. Reset gate clock is
applied below 8 Vp-p.
2
LZ2325A/LZ2326AR
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Ambient operating temperature
Output transistor drain voltage
Reset transistor drain voltage
SYMBOL
MIN.
12.0
12.0
TYP. MAX. UNIT NOTE
TOPR
VOD
VRD
25.0
12.5
VOD
12.5
0.0
˚C
V
V
V
V
V
V
V
13.0
13.0
Overflow drain clock
Ground
p-p level
VØOFD
GND
1
1
1
Test pin, T1
VT1
VOD
0.0
12.5
LOW level
HIGH level
VØTGL
VØTGH
–0.05
12.0
0.05
13.0
Transfer gate clock
Vertical shift register
clock
VØV1, VØV2
VØV3, VØV4
VØH1L, VØH2L
VØH1BL, VØH2BL
VØH1H, VØH2H
VØH1BH, VØH2BH
VØRS
p-p level
4.7
5.0
0.0
5.5
V
V
LOW level
–0.05
0.05
Horizontal shift register
clock
HIGH level
p-p level
4.7
4.5
5.0
5.0
5.5
5.5
V
V
Reset gate clock
fØV1, fØV2
fØV3, fØV4
fØH1, fØH2
fØH1B, fØH2B
fØRS
Vertical shift register clock frequency
Horizontal shift register clock frequency
15.63
kHz
9.66
MHz
Reset gate clock frequency
Horizontal shift register clock phase
9.66
10.0
MHz
ns
tw1, tw2
5.0
18.0
2
NOTES :
1. Use the circuit parameter indicated in "SYSTEM CONFIGURATION EXAMPLE", and do not connect to DC voltage directly.
2.
ØH1, ØH2
ØH1B, ØH2B : Normal image output mode
ØH1B, ØH2B : Mirror image output mode
tw1
tw2
* To apply power, first connect GND and then turn on VOD and then turn on other powers and pulses. Do not connect the
device to or disconnect it from the plug socket while power is being applied.
3
LZ2325A/LZ2326AR
CHARACTERISTICS FOR LZ2325A (Drive method : Field accumulation)
(TA = +25 ˚C, Operating conditions : The typical values specified in "RECOMMENDED OPERATING CONDITIONS".
Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)
PARAMETER
Standard output voltage
SYMBOL
VO
MIN.
TYP. MAX. UNIT NOTE
150
mV
%
2
3
Photo response non-uniformity
Saturation output voltage
Dark output voltage
Dark signal non-uniformity
Sensitivity
PRNU
VSAT
VDARK
DSNU
R
15
550
mV
mV
mV
mV
dB
%
4
0.5
0.5
600
–110
1, 5
1, 6
7
8
9
420
Smear ratio
Image lag
SMR
AI
–90
1.0
Blooming suppression ratio
Output transistor drain current
Output impedance
Vector breakup
Line crawling
Luminance flicker
ABL
IOD
RO
1 000
10
4.0
400
8.0
mA
$
˚, %
%
10.0
3.0
2.0
11
12
13
%
NOTES :
• Within the recommended operating conditions of VOD,
VOFD of the internal output satisfies with ABL larger than
1 000 times exposure of the standard exposure conditions,
and VSAT larger than 550 mV.
8. The sensor is exposed only in the central area of V/10
square with a lens at F4, where V is the vertical image
size. SMR is defined by the ratio of the output voltage
detected during the vertical blanking period to the
maximum output voltage in the V/10 square.
1. TA = +60 ˚C
2. The average output voltage under uniform illumination.
The standard exposure conditions are defined as when
Vo is 150 mV.
9. The sensor is exposed at the exposure level
corresponding to the standard conditions. AI is defined
by the ratio of the output voltage measured at the 1st
field during the non-exposure period to the standard
output voltage.
10. The sensor is exposed only in the central area of V/10
square, where V is the vertical image size. ABL is
defined by the ratio of the exposure at the standard
conditions to the exposure at a point where blooming is
observed.
11. Observed with a vector scope when the color bar chart
is imaged under the standard exposure conditions.
12. The difference between the average output voltage of the
(Mg + Ye), (G + Cy) line and that of the (Mg + Cy), (G +
Ye) line under the standard exposure conditions.
13. The difference between the average output voltage of
the odd field and that of the even field under the
standard exposure conditions.
3. The image area is divided into 10 x 10 segments under
the standard exposure conditions. Each segment's
voltage is the average output voltage of all pixels within
the segment. PRNU is defined by (Vmax – Vmin)/Vo,
where Vmax and Vmin are the maximum and minimum
values of each segment's voltage respectively.
4. The image area is divided into 10 x 10 segments. Each
segment's voltage is the average output voltage of all
pixels within the segment. VSAT is the minimum
segment's voltage under 10 times exposure of the
standard exposure conditions.
5. The average output voltage under non-exposure
conditions.
6. The image area is divided into 10 x 10 segments under
non-exposure conditions. DSNU is defined by (Vdmax –
Vdmin), where Vdmax and Vdmin are the maximum and
minimum values of each segment's voltage respectively.
7. The average output voltage when a 1 000 lux light
source with a 90% reflector is imaged by a lens of F4,
f50 mm.
4
LZ2325A/LZ2326AR
CHARACTERISTICS FOR LZ2326AR (Drive method : Field accumulation)
(TA = +25 ˚C, Operating conditions : The typical values specified in "RECOMMENDED OPERATING CONDITIONS".
Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)
PARAMETER
Standard output voltage
SYMBOL
VO
MIN.
TYP. MAX. UNIT NOTE
150
mV
%
2
3
Photo response non-uniformity
Saturation output voltage
Dark output voltage
Dark signal non-uniformity
Sensitivity
PRNU
VSAT
VDARK
DSNU
R
15
550
mV
mV
mV
mV
dB
%
4
0.5
0.5
900
–110
1, 5
1, 6
7
8
9
630
Smear ratio
Image lag
SMR
AI
–90
1.0
Blooming suppression ratio
Output transistor drain current
Output impedance
ABL
IOD
RO
1 000
10
4.0
400
8.0
mA
$
NOTES :
• Within the recommended operating conditions of VOD,
VOFD of the internal output satisfies with ABL larger than
1 000 times exposure of the standard exposure conditions,
and VSAT larger than 550 mV.
7. The average output voltage when a 1000 lux light
source with a 90% reflector is imaged by a lens of F4,
f50 mm.
8. The sensor is exposed only in the central area of V/10
square with a lens at F4, where V is the vertical image
size. SMR is defined by the ratio of the output voltage
detected during the vertical blanking period to the
maximum output voltage in the V/10 square.
1. TA = +60 ˚C
2. The average output voltage under uniform illumination.
The standard exposure conditions are defined as when
Vo is 150 mV.
3. The image area is divided into 10 x 10 segments under
the standard exposure conditions. Each segment's
voltage is the average output voltage of all pixels within
the segment. PRNU is defined by (Vmax – Vmin)/Vo,
where Vmax and Vmin are the maximum and minimum
values of each segment's voltage respectively.
4. The image area is divided into 10 x 10 segments. Each
segment's voltage is the average output voltage of all
pixels within the segment. VSAT is the minimum
segment's voltage under 10 times exposure of the
standard exposure conditions.
9. The sensor is exposed at the exposure level
corresponding to the standard conditions. AI is defined
by the ratio of the output voltage measured at the 1st
field during the non-exposure period to the standard
output voltage.
10. The sensor is exposed only in the central area of V/10
square, where V is the vertical image size. ABL is
defined by the ratio of the exposure at the standard
conditions to the exposure at a point where blooming is
observed.
5. The average output voltage under non-exposure
conditions.
6. The image area is divided into 10 x 10 segments under
non-exposure conditions. DSNU is defined by (Vdmax –
Vdmin), where Vdmax and Vdmin are the maximum and
minimum values of each segment's voltage respectively.
5
LZ2325A/LZ2326AR
PIXEL STRUCTURE
OPTICAL BLACK
(2 PIXELS)
OPTICAL BLACK
(28 PIXELS)
512 (H) x 582 (V)
COLOR FILTER ARRAY (FOR LZ2325A)
(1, 582)
(512, 582)
Ye Cy Ye Cy Ye
Cy Ye Cy Ye Cy
Mg
G
Mg
G
Mg
G
Mg
G
Mg
G
Ye Cy Ye Cy Ye
Cy Ye Cy Ye Cy
G
Mg
G
Mg
G
Mg
G
Mg
G
Mg
Ye Cy Ye Cy Ye
Cy Ye Cy Ye Cy
Mg
G
Mg
G
Mg
G
Mg
G
Mg
G
Ye Cy Ye Cy Ye
Cy Ye Cy Ye Cy
Mg
G
Mg
G
Mg
G
Mg
G
Mg
G
Ye Cy Ye Cy Ye
Cy Ye Cy Ye Cy
G
Mg
Ye Cy Ye Cy Ye
Mg Mg Mg
G
Mg
G
Mg
Cy Ye Cy Ye Cy
Mg Mg
G
Mg
G
Mg
2nd, 4th
field
1st, 3rd
field
G
G
G
G
G
(1, 1)
(512, 1)
6
LZ2325A/LZ2326AR
TIMING CHART
VERTICAL TRANSFER TIMING <NORMAL OUTPUT>
(1st, 3rd FIELD)
623
625
1
6
20
22
HD
VD
ØV1
ØV2
ØV3
ØV4
ØTG
580 582
581
1
2
3
5
6
7
8
+
+
+
4
+
+
OS
(2nd, 4th FIELD)
311
318
332
HD
VD
ØV1
ØV2
ØV3
ØV4
ØTG
579 581
580 582
2
3
4
5
6
7
+
+
+
+
+
1
OS
HORIZONTAL TRANSFER TIMING <NORMAL OUTPUT>
618,
1
60
HD
ØH1
ØH2
ØRS
OS
24
96.5
PRE SCAN (4)
π512
OB (28)
OB (2)
OUTPUT (512) 1π
29
49
ØV1
ØV2
ØV3
39
59
24
54
34
64
ØV4
62
72
ØOFD
7
LZ2325A/LZ2326AR
HORIZONTAL TRANSFER TIMING <NORMAL OUTPUT>
(1st, 3rd FIELD)
1
60
618,
1
60
29 49
HD
ØV1
ØV2
39 59
54
24
ØV3
ØV4
ØTG
34
64
242
338
25.07 µs (242 bits)
60
9.95 µs (96 bits)
64.00 µs (618 bits)
(2nd, 4th FIELD)
1
618,
1
60
HD
29 49
39
ØV1
ØV2
59
54
64
24
34
ØV3
ØV4
ØTG
242
338
25.07 µs (242 bits)
9.95 µs (96 bits)
64.00 µs (618 bits)
8
LZ2325A/LZ2326AR
VERTICAL TRANSFER TIMING <MIRROR OUTPUT>
(1st, 3rd FIELD)
623
625
1
6
20
22
HD
VD
ØV1
ØV2
ØV3
ØV4
ØTG
578 580 582
579 581
1
2
3
4
5
6
+
+
+
+
+
OS
(2nd, 4th FIELD)
311
318
332
HD
VD
ØV1
ØV2
ØV3
ØV4
ØTG
577 579 581
578 580 582
2
3
4
5
+
+
+
+
+
1
OS
HORIZONTAL TRANSFER TIMING <MIRROR OUTPUT>
618,
1
60
HD
ØH1
ØH2
ØRS
OS
4
70.5
OB (2)
PRE SCAN (4)
OB (28)
OUTPUT (512) 512π
ππππ
1
9
29
ØV1
ØV2
ØV3
19
39
34
4
14
44
ØV4
42
52
ØOFD
9
LZ2325A/LZ2326AR
HORIZONTAL TRANSFER TIMING <MIRROR OUTPUT>
(1st, 3rd FIELD)
1
4
60
618,
1
60
HD
9
29
19 39
34
ØV1
ØV2
ØV3
ØV4
ØTG
24 44
222
318
23.00 µs (222 bits)
60
9.95 µs (96 bits)
64.00 µs (618 bits)
(2nd, 4th FIELD)
1
618,
1
60
HD
9
29
19
ØV1
ØV2
39
34
4
ØV3
ØV4
ØTG
14
44
222
318
23.00 µs (222 bits)
9.95 µs (96 bits)
64.00 µs (618 bits)
10
LZ2325A/LZ2326AR
SYSTEM CONFIGURATION EXAMPLE
ØH1
ØV3
ØV4
ØV1
ØV2
ØTG
OFD
T1
ØH1B
ØH2
ØH2B
OD
OS
GND
RD
ØRS
• Example of drive circuit with LR38580 driver IC.
11
PACKAGES FOR CCD AND CMOS DEVICES
PACKAGE
(Unit : mm)
16 WDIP (WDIP016-N-0500C)
Center of effective imaging area
±0.15
7.00
Glass Lid
and center of package
±0.60
1.40
(◊ : Lid's size)
9
16
CCD
Package (Cerdip)
θ
CCD
0.04
Cross Section A-A'
1
8
MAX.
Rotation error of die : ¬ = 1.5˚
±0.10
11.20
(◊)
±0.15
14.00
A
±0.10
TYP.
0.25
P-1.78
A'
TYP.
TYP.
±0.25
0.46
0.90
12.70
0.25
M
12
PRECAUTIONS FOR CCD AREA SENSORS
PRECAUTIONS FOR CCD AREA SENSORS
(In the case of plastic packages)
1. Package Breakage
– The leads of the package are fixed with
package body (plastic), so stress added to a
lead could cause a crack in the package
body (plastic) in the jointed part of the lead.
In order to prevent the package from being broken,
observe the following instructions :
1) The CCD is a precise optical component and
the package material is ceramic or plastic.
Therefore,
Glass cap
Package
ø Take care not to drop the device when
mounting, handling, or transporting.
Lead
Fixed
ø Avoid giving a shock to the package.
Especially when leads are fixed to the socket
or the circuit board, small shock could break
the package more easily than when the
package isn’t fixed.
Stand-off
2) When applying force for mounting the device or
any other purposes, fix the leads between a
joint and a stand-off, so that no stress will be
given to the jointed part of the lead. In addition,
when applying force, do it at a point below the
stand-off part.
3) When mounting the package on the housing,
be sure that the package is not bent.
– If a bent package is forced into place
between a hard plate or the like, the pack-
age may be broken.
4) If any damage or breakage occurs on the sur-
face of the glass cap, its characteristics could
deteriorate.
(In the case of ceramic packages)
– The leads of the package are fixed with low
melting point glass, so stress added to a
lead could cause a crack in the low melting
point glass in the jointed part of the lead.
Therefore,
ø Do not hit the glass cap.
ø Do not give a shock large enough to cause
distortion.
ø Do not scrub or scratch the glass surface.
– Even a soft cloth or applicator, if dry, could
cause dust to scratch the glass.
Low melting point glass
Lead
2. Electrostatic Damage
As compared with general MOS-LSI, CCD has
lower ESD. Therefore, take the following anti-static
measures when handling the CCD :
Fixed
1) Always discharge static electricity by grounding
the human body and the instrument to be used.
To ground the human body, provide resistance
of about 1 M$ between the human body and
the ground to be on the safe side.
Stand-off
2) When directly handling the device with the
fingers, hold the part without leads and do not
touch any lead.
13
PRECAUTIONS FOR CCD AREA SENSORS
3) To avoid generating static electricity,
a. do not scrub the glass surface with cloth or
plastic.
ø The contamination on the glass surface
should be wiped off with a clean applicator
soaked in Isopropyl alcohol. Wipe slowly and
gently in one direction only.
b. do not attach any tape or labels.
c. do not clean the glass surface with dust-
cleaning tape.
– Frequently replace the applicator and do not
use the same applicator to clean more than
one device.
4) When storing or transporting the device, put it in
a container of conductive material.
◊ Note : In most cases, dust and contamination
are unavoidable, even before the device
is first used. It is, therefore, recommended
that the above procedures should be
taken to wipe out dust and contamination
before using the device.
3. Dust and Contamination
Dust or contamination on the glass surface could
deteriorate the output characteristics or cause a
scar. In order to minimize dust or contamination on
the glass surface, take the following precautions :
1) Handle the CCD in a clean environment such
as a cleaned booth. (The cleanliness level
should be, if possible, class 1 000 at least.)
2) Do not touch the glass surface with the fingers.
If dust or contamination gets on the glass
surface, the following cleaning method is
recommended :
4. Other
1) Soldering should be manually performed within
5 seconds at 350 °C maximum at soldering iron.
2) Avoid using or storing the CCD at high tem-
perature or high humidity as it is a precise
optical component. Do not give a mechanical
shock to the CCD.
ø Dust from static electricity should be blown
off with an ionized air blower. For anti-
electrostatic measures, however, ground all
the leads on the device before blowing off
the dust.
3) Do not expose the device to strong light. For
the color device, long exposure to strong light
will fade the color of the color filters.
14
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