PT381F [SHARP]
High Sensitivity, f 3mm Resin Mold Type Phototransistor; 高灵敏度，女3毫米树脂模制型光电晶体管
| 型号： | PT381F |
| 厂家： | 
SHARP ELECTRIONIC COMPONENTS |
| 描述： | High Sensitivity, f 3mm Resin Mold Type Phototransistor |
| 文件： | 总5页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PT380/PT380F/PT381/PT381F
High Sensitivity, φ 3mm Resin Mold Type
Phototransistor
PT380/PT380F
PT381/PT381F
( )
Unit : mm
■ Features
■ Outline Dimensions
1. High sensitivity
φ3.8±
(
(
)
0.2
IC : MIN.160µA at EV = 100lx, PT380
❈ Epoxy resin
φ 3.0±
0.15
)
IC : MIN.120µA at EV = 2lx, PT381
(
)
Mark red
PT380
PT380F
2
PT381
PT381F
2
2. Compact φ3mm resin mold package
(
)
PT381F
(
)
3. Intermediate acceptance ∆θ : TYP. ± 20˚
4. Visible light cut-off type : PT380F/ PT381F
■ Model Line-ups
1
1
Single photo-
transistor output
Darlington photo-
transistor output
2- 0.5+-
0.15
0.1
No visible
light cut-off
filter
PT380
PT381
(
)
1
2
Emitter
Collector
2.54
Built-in
visible light
cut-off filter
PT380F
PT381F
❈ Epoxy resin
Transparent resin
Light blue transparent resin
Visible light
PT380
PT381
1
2
■ Applications
1. Floppy disk drives
PT380F/
PT381F
Cut-off resin
2. Optoelectronic switches
3. Infrared applied systems
(
)
black
(
)
■ Absolute Maximum Ratings
Ta = 25˚C
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
Symbol
V CEO
V ECO
IC
Rating
Unit
V
35
6
20
V
mA
mW
˚C
Collector power dissipation
Operating temperature
Storage temperature
PC
50
T opr
T stg
- 25 to + 85
- 40 to + 85
260
˚C
*1
Soldering temperature
T sol
˚C
*1 For 3 seconds at the position of 1.4mm from the bottom face of resin package
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”
PT380/PT380F/PT381/PT381F
(
)
Ta = 25˚C
■ Electro-optical Characteristics
Parameter
Symbol
IC
Conditions
MIN. TYP. MAX. Unit
PT380
EV = 100lX
VCE = 5V
EV = 2lX
0.16
-
-
1.17
0.90
1.5
*2Collector
current
PT380F
PT381
0.095
mA
0.12
-
PT381F
VCE = 10V
0.07
-
1.08
0.1
Collector dark
current
*2Collector-emitter
PT380 /PT380F
PT381 /PT381F
PT380 /PT380F
PT381 /PT381F
Ee = 0, VCE = 20V
Ee = 0, VCE = 10V
Ee = 10mW/cm2, I C = 0.5mA
Ee = 1mW/cm2, I C = 2.5mA
IC = 0.1mA
-
-
-
-
-
ICEO
µA
V
-
1.0
0.2
-
0.4
VCE
(
)
sat
saturation voltage
1.0
Collector-emitter breakdown
voltage
BVCEO
BVECO
λ P
35
6
-
-
-
-
V
Ee = 0
Emitter-Collector breakdown
voltage
IC = 0.01mA
V
Ee = 0
Peak sensitivity
wavelength
PT380 / PT381
-
-
-
-
-
-
-
800
860
10
-
-
nm
-
PT380F /PT381F
PT380 /PT380F
PT381 /PT381F
PT380 /PT380F
PT381 /PT381F
VCE = 20V, IC= 1mA, R L = 1kΩ
VCE = 2V, IC = 10mA, RL = 100Ω
VCE = 20V, IC = 1mA, R L = 1k Ω
VCE = 2V, IC = 10mA, RL = 100Ω
-
40
Rise time
Fall time
tr
Response
time
100 400
35
100 400
µs
8
tf
Half intensity angle
∆θ
± 20
-
˚
(
*2 EV, E e : Illuminance, irradiance by CIE standard light source A tungsten lamp
)
Fig. 2-a Collector Dark Current vs.
Ambient Temperature
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
(
)
PT380/PT380F
80
10 -6
5
VCE = 20V
70
60
50
40
30
20
10
0
2
10 -7
5
2
10 -8
5
2
10 -9
5
2
10- 10
-
25
0
25
50
75
)
100
0
25
)
Ambient temperature T a ˚C
50
75
100
(
(
Ambient temperature Ta ˚C
PT380/PT380F/PT381/PT381F
Fig. 2-b Collector Dark Current vs.
Ambient Temperature
Fig. 3-a Relative Collector Current vs.
Ambient Temperature
(
)
(
)
PT381/381F
PT380/PT380F
10 -4
5
160
140
120
100
80
V
CE = 5V
VCE
= 10V
EV = 100lx
10 -5
5
10 -6
5
10 -7
5
10 -8
5
60
10 -9
5
40
10 -10
5
20
10 -11
5
0
-
25
0
25
50
75
100
0
25
)
Ambient temperature Ta ˚C
50
75
100
(
)
(
Ambient temperature Ta ˚C
Fig. 3-b Relative Collector Current vs.
Ambient Temperature
Fig. 4-a Collector Current vs.
(
)
Irradiance
PT380/380F
(
)
PT381/PT381F
175
150
125
100
75
5
4
3
2
1
0
VCE = 10V
V = 2lx
VCE = 5V
Ta = 25˚C
E
50
-
25
0
25
50
75
)
100
0
2.5
5
7.5
10
2
(
(
)
Ambient temperature Ta ˚C
Irradiance E e mW/cm
Fig. 5-a Collector Current vs.
Collector-emitter Voltage
Fig. 4-b Collector Current vs.
(
)
Irradiance
PT381/PT381F
(
)
PT380/380F
100
10
1
1.2
1.0
0.8
0.6
0.4
0.2
0
VCE = 10V
Ta = 25˚C
Ta = 25˚C
0.1
0.01
0.1
1
2
10
0
5
10
( )
Collector-emitter voltage VCE V
15
20
25
30
(
)
Irradiance E e mW/cm
PT380/PT380F/PT381/PT381F
Fig. 5-b Collector Current vs.
Collector-emitter Voltage
Fig. 6 Spectral Sensitivity
(
)
PT381/381F
100
80
60
40
20
0
T
a = 25˚C
PT380F/
PT381F
(
)
T
a = 25˚C
PT380
PC MAX
25
20
15
10
5
E
e = 1.0mW/cm2
0.75mW/cm2
PT381
0.5mW/cm2
0.1mW/cm2
0
0
1
2
3
4
5
6
7
8
9
10
400 500 600 700 800 900 1000 1100
(
)
(
)
nm
Collector-emitter voltage VCE
V
Wavelength
λ
Fig. 7-a Response Time vs. Load Resistance
Test Circuit for Response Time
(
)
PT380/PT380F
V
CE = 20V
(
)
PT380/PT380F
IC = 1mA
Ta = 25˚C
100
50
tr
Output
RL
Input
20
10
5
tf
90%
10%
VCC
Output
2
1
tr
tf
1
2
5
10
20
50
100
(
)
Load resistance RL kΩ
Fig. 7-b Response Time vs. Load Resistance
Test Circuit for Response Time
(
)
PT381/381F
1000
500
(
)
PT381/PT381F
V
CE = 2V
C = 10mA
a = 25˚C
I
T
200
100
50
tr
tf
Output
RL
Input
td
20
10
5
90%
VCC
ts
Output
td
10%
2
1
ts
tr
tf
5
10 20
50 100 200 500 1000
5000
(
)
Ω
Load resistance RL
PT380/PT380F/PT381/PT381F
Fig. 8-a Collector-emitter Saturation
Voltage vs. Irradiance
Fig. 8-b Collector-emitter Saturation
Voltage vs. Irradiance
(
)
(
)
PT380/380F
PT381/381F
0.8
0.6
0.4
0.2
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
I
C = 0.5mA
IC = 0.05mA
0.1mA
1mA
2mA
5mA
10mA
0.5mA
1.0mA
0
2.5
5.0
7.5
2
10
0.01
0.1
Irradiance E
1
10
2
(
)
(
)
mW/cm
Irradiance E e mW/cm
e
Fig.10 Relative Collector Current vs.
Distance to Emitter
(
)
Fig. 9 Sensitivity Diagram
Ta= 25˚C
(
)
- 20˚
- 10˚
0˚
+10˚
100
+20˚
Emitter:GL380/GL381
100
IF = 50mA
Ta = 25˚C
- 30˚
- 40˚
+30˚
+40˚
80
10
1
60
40
20
- 50˚
- 60˚
+50˚
+60˚
- 70˚
- 80˚
- 90˚
+70˚
+80˚
+90˚
0.1
0.1
1
10
100
( )
Distance to emitter d mm
Angular displacement
θ
Please refer to the chapter “ Precautions for Use.”
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