PT4120 [SHARP]
Side View and Thin Flat Type 2-Phase Output Phototransistor; 侧视图和超薄平板型2相输出光电晶体管
| 型号： | PT4120 |
| 厂家： | 
SHARP ELECTRIONIC COMPONENTS |
| 描述： | Side View and Thin Flat Type 2-Phase Output Phototransistor |
| 文件： | 总4页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PT4120
Side View and Thin Flat Type
2-Phase Output Phototransistor
PT4120
■Features
■Outline Dimensions
(Unit : mm)
1.8
1. 2-phase PT output type
(Read pitch : 0.94 mm)
2. Compact, thin and flat package
Transparent
epoxy resin
2-C0.5
PT B
0.7
3.0
0.7
4˚
4˚
PT A
4˚
MAX.0.1
4˚
0.15
0.8
(1.7)
■ Applications
1. Mouses
MAX.
Rugged resin 0.2
56˚±
5.0
3-0.45+- 0.3
0.1
3-0.4+- 0.3
0.1
2. Track balls
3. Encoders
1
2
3
(2.54)
(1.5)
Shape of detector portion
6˚
6˚
6˚
6˚
2.8
0.81
* Tolerance : ± 0.2 mm
1
2
3
Emitter (PT A)
Collector (common)
Emitter (PT B)
1
3
2
■ Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
Symbol
Rating
Unit
V
VCEO
VECO
IC
35
6
V
20
mA
mW
˚C
Collector power dissipation
Operating temperature
Storage temperature
PC
75
Topr
Tstg
Tsol
- 25 to +85
- 40 to +85
260
˚C
Soldering area
*1Soldering temperature
˚C
*1 For MAX. 5 seconds at the position of 1.4 mm from the resin edge
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
PT4120
■ Electro-optical Characteristics
(Ta = 25˚C)
Unit
Parameter
Symbol
IC
Conditions
MIN.
TYP.
MAX.
1.8
*2
EV = 1 000 lx
CE = 5V
Collector current
0.45
-
-
mA
µ A
V
V
*2
*2
Dark current
ICEO
Ee = 0,VCE= 20V
EV = 1 000 lx
C = 0.1mA
-
-
0.1
Collector-emitter saturation voltage
VCE(sat)
0.1
0.4
I
IC = 0.1mA
Ee = 0
IE = 0.01mA
Ee = 0
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Peak sensitivity wavelength
BVCEO
BVECO
λ p
35
6
-
-
-
-
-
V
V
*2
*2
-
800
nm
Rise Time
tr
tf
VCE = 2V,IC = 2mA
-
-
3.0
3.5
-
-
µ s
µ s
Response time
Fall Time
RL = 100Ω
2-element IC variation
R
IC(a)/IC(b)
0.7
-
1.3
-
*2 E , E : Illuminance, irradiance by CIE standard light source A (tungsten lamp)
v
e
*3 Terminals other than test terminal shall be released.
Fig. 1 Collector Power Dissipation vs.
Fig. 2 Dark Current vs. Ambient Temperature
Ambient Temperature
80
10 -6
VCE = 20V
5
70
60
50
40
30
20
10
0
2
10 -7
5
2
10 -8
5
2
10 -9
5
2
10 -10
-
25
0
25
50
75 85 100
0
25
50
75
100
Ambient temperature Ta ( ˚C)
Ambient temperature Ta ( ˚C)
PT4120
Fig. 3 Relative Collector Current vs.
Fig. 4 Collector Current vs. Illuminance
Ambient Temperature
160
20.0
V
CE = 5V
VCE =5V
Ta = 25˚C
140
10.0
5.0
EV =1 000 lx
120
100
80
60
40
20
0
2.0
1.0
0.5
0.0
0.1
0
10
20
30
40
50
60
70
10
20
50 100
200 500 1000 2000
Ambient temperature Ta (˚C)
Illuminance EV (lx)
Fig. 5 Collector Current vs.
Fig. 6 Spectral Sensitivity
Collector-emitter Voltage
1.6
100
Ta = 25˚C
Ev =1 000 lx
1.4
1.2
1
80
60
40
20
0
750 lx
0.8
0.6
0.4
0.2
0
500 lx
250 lx
100 lx
0
5
10
15
20
25
30
35
400 500 600 700 800 900 1000 1100
Collector-emitter voltage VCE (V)
Wavelength λ (nm)
Fig. 7 Response Time vs. Load Resistance
Test Circuit for Response Time
100
VCE = 2V
Ic = 2mA
50
T
a = 25˚C
Output
RL
Input
20
10
5
tr
tf
90%
10%
Vcc
Output
tf
tr
t r
t f
2
1
0.1
0.2
0.5
1
2
5
10
Load resistance RL (kΩ)
PT4120
Fig. 9 Collector-emitter Saturation Voltage
Fig. 10 Relative Output vs. Distance
(Detector : GL4100)
vs. Irradiance
2
100
Ta =25˚C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
1
0.1
0.01
1
10
10
100
1000
0.1
100
Irradiance Ee (mW/cm2)
Distance between emitter and detector d (mm)
● Please refer to the chapter "Precautions for Use". (Page 78 to 93)
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