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S21MA01 [SHARP]

6-pin DIP Type SSR for Low Power Control; 6引脚DIP型SSR的低功耗控制
S21MA01
型号： S21MA01
厂家： SHARP ELECTRIONIC COMPONENTS    SHARP ELECTRIONIC COMPONENTS
描述：

6-pin DIP Type SSR for Low Power Control
6引脚DIP型SSR的低功耗控制
文件： 总4页 (文件大小：62K)
中文：  中文翻译
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S11MA01/S21MA01  
6-pin DIP Type SSR for Low  
Power Control  
S11MA01/S21MA01  
( )  
Unit : mm  
■ Features  
■ Outline Dimensions  
1. Low operating current type  
S11MA01  
Internal conection diagram  
(
)
MAX 60mArms  
6
4
6
4
2. Compact 5-pin dual-in-line package type  
3. Recognized by UL file No. E94758  
S11MA01  
■ Applications  
Anode  
mark  
1
2
3
1
2
3
0.9 ±  
0.2  
0.3  
1. Electrical dampers for refrigerator  
2. Turntable controllers for microwave oven  
3. Ignitions circuit for oil fan heater  
2.54±  
7.12±  
0.25  
1.2 ±  
7.62±  
0.5  
0.3  
1
2
3
4
Anode  
Cathode  
NC  
Anode,  
Cathode  
Anode,  
Cathode  
6
0.5±  
0.26±  
θ : 0 to 13 ˚  
0.1  
0.1  
θ
(
)
Ta= 25˚C  
■ Absolute Maximum Ratings  
Parameter  
Symbol  
Rating  
50  
Unit  
mA  
V
Forward current  
IF  
VR  
IT  
Input  
Reverse voltage  
6
RMS ON-state current  
Peak one cycle surge current  
100  
mA rms  
A
*1  
Isurge  
1.2  
Output  
S11MA01 VDRM  
S21MA01 VDRM  
Viso  
400  
V
Repetitive peak  
OFF-state voltage  
*2Isolation voltage  
600  
V
5 000  
- 25 to + 80  
- 55 to + 125  
260  
V rms  
˚C  
Operating temperature  
T opr  
T stg  
T sol  
Storage temperature  
˚C  
*3Soldering temperature  
˚C  
*1 50Hz sine wave  
*2 AC for 1 minute, 40 to 60% RH, f = 60Hz  
*3 For 10 seconds  
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,  
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”  
S11MA01/S21MA01  
(
)
Ta = 25˚C  
■ Electro-optical Characteristics  
Parameter  
Symbol  
VF  
Conditions  
MIN.  
TYP.  
MAX.  
1.4  
10 - 5  
10 - 6  
2.5  
Unit  
V
Forward voltage  
Input  
IF = 20mA  
VR = 3V  
-
-
1.2  
Reverse current  
IR  
-
-
A
Repetitive peak OFF-state voltage  
ON-state voltage  
IDRM VDRM = Rated  
-
A
VT  
IT = 0.06A  
VD = 6V  
-
-
V
Holding current  
Output  
IH  
0.1  
500  
1.0  
-
3.5  
mA  
V/µ s  
(
)
• Rated  
Critical rate of rise of OFF-state voltage  
dV/dt V DRM  
=
1/  
-
2
S11MA01  
Operating current  
AC100Vrms, 60Hz, Resistance load  
AC200Vrms, 60Hz, Resistance load  
-
-
-
-
60  
mA rms  
S21MA01  
Mininum trigger current  
Isolation resistance  
Turn-on time  
IFT  
V
D = 6V, R L = 100 Ω  
-
1011  
-
10  
-
mA  
Ω
Transfer  
charac-  
teristics  
10  
x
RISO DC = 500V, 40 to 60% RH  
ton VD = 6V, R L = 100Ω , I F = 20mA  
5
10  
-
100  
µ s  
Fig. 1 RMS ON-state Current vs.  
Fig. 2 Forward Current vs.  
Ambient Temperature  
Ambient Temperature  
120  
60  
50  
40  
100  
80  
60  
40  
20  
0
30  
20  
10  
0
- 30  
- 30  
0
50  
100  
0
50  
100  
(
)
(
a
)
Ambient temperature T ˚C  
Ambient temperature T ˚C  
a
Fig. 3 Operating Current vs.  
Fig. 4 Forward Current vs.  
Forward Voltage  
Ambient Temperature  
70  
100  
50  
60  
50  
40  
30  
20  
0
T
a = 75˚C  
50˚C  
25˚C  
20  
10  
5
0˚C  
- 25˚C  
2
1
- 30  
0
50  
100  
0.9  
1.0  
1.1  
( )  
Forward voltage V F V  
1.2  
1.3  
1.4  
1.5  
(
)
Ambient temperature T ˚C  
a
S11MA01/S21MA01  
Fig. 5 Minimum Trigger Current vs.  
Ambient Temperature  
Fig. 6 ON-state Voltage vs.  
Ambient Temperature  
12  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
IT = 0.06A  
VD= 6V  
RL= 100Ω  
10  
8
6
4
2
0
- 30  
0
20  
40  
60  
80  
100  
- 30  
0
20  
40  
60  
80  
100  
(
)
(
)
Ambient temperature T a ˚C  
Ambient temperature T ˚C  
a
Fig. 7 Relative Holding Current vs.  
Ambient Temperature  
Fig. 8 ON-state Current vs.  
ON-state Voltage  
120  
IF= 20mA  
Ta= 25˚C  
VD = 6V  
103  
102  
101  
100  
80  
60  
40  
20  
0
- 30  
0
20  
40  
60  
80  
100  
0
0.5  
1.0  
1.5  
(
)
( )  
ON-state voltage V T V  
Ambient temperature Ta ˚C  
Fig. 9 Turn-on Time vs. Forward Current  
100  
VD= 6V  
RL= 100Ω  
IF= 20mA  
50  
40  
30  
20  
10  
10  
20  
30  
40 50  
100  
(
)
Forward current I  
mA  
F
S11MA01/S21MA01  
■ Basic Operation Circuit  
R1  
+ VCC  
1
2
6
4
Load  
AC 100V  
AC 200V  
D1  
SSR  
ZS  
VI  
ZS : Surge absorption circuit  
Tr1  
(
)
(
)
( )  
3 Phase Control  
1
DC Drive  
2
Pulse Drive  
AC supply voltage  
Input signal  
Load current  
(
)
for resistance load  
)
Notes 1 If large amount of surge is loaded onto V or the driver circuit, add a diode D between terminals 1  
CC  
1
and 2 to prevent reverse bias from being applied to the infrared LED.  
Be sure to install a surge absorption circuit.  
)
)
2
3
(
)
An appropriate circuit must be chosen according to the load for CR, choose its constant . This must be  
carefully done especially for an inductive load.  
For phase control, adjust such that the load current immediately after the input signal is applied will  
be more than 10mA.  
● Please refer to the chapter “ Precautions for Use”  

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