2SC3356K [SHIKUES]
NPN Silicon RF Transistor;
| 型号： | 2SC3356K |
| 厂家： | 
SHIKUES Electronics |
| 描述： | NPN Silicon RF Transistor |
| 文件： | 总3页 (文件大小：829K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC3356K
NPN SILICON RF TRANSISTOR
3
·Ultra high frequency low noise transistor
·Silicon epitaxial bipolar process.
·High power gain, low noise figure,
·high dynamic range and ideal current characteristics,
·SC-59 chip package, mainly used in VHF, UHF and CATV
·high frequency wideband low noise amplifier.
2
1
SC-59
Feature
High gain:︱S21
Low noise: NF
1：Base 2：Emitter 3：Collector
=20mA，f=1GHz
=7mA， f=1GHz
e
︱2
TYP. Value is 11dB
TYP. Value is 1.5dB
TYP. Value is 7GHz
@
@
@
V
V
V
CE=10V，I
CE=10V，I
CE=10V，I
C
C
f
T
(TYP.)
:
C=20mA，f=1GHz
Absolute Maximum Ratings
TA=25℃ Unless Otherwise noted
PARAMETER
SYMBLE
MAXIMUM VALUE
UNIT
V
Collector-base breakdown voltage
VCBO
VCEO
VEBO
20
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector current
12
V
3
V
I
C
100
200
150
+150 ℃
mA
mW
℃
Collector Power Dissipation
Junction Temperature
P
D
Tj
Storage Temperature
Tstg
-65
~
Tstg
hFE Classification (@VCE=10V,IC=20mA)
B
C
D
Classification
Marking
hFE
R24
R25
90-140
130-180
170-250
REV.08
1 of 3
2SC3356K
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Transit frequency
SYMBLE MIN. TYP. MAX.
UNIT
V
TEST CONDITION
V
CBO
CBO
EBO
20
5
I
C=1.0μA
I
0.1
0.1
μA
μA
GHz
pF
V
CB=10V
I
V
EB=1V
CE=10V,I
VCB=10V,IE=0mA,f=1MHz
CE=10V,I =20mA,f=1GHz
CE=10V,I =7mA,f=1GHz
7
f
T
V
C=20mA
Output feedback capacitor
Power gain
Cre
0.65
11
| S21
e
|
2
dB
V
C
NF
1.5
Noise factor
dB
V
C
PACKAGE：SC-59
1:（Base） 2:（Emitter） 3:（Collector）
REV.08
2 of 3
2SC3356K
Typical characteristic curves (TA =25℃)
REV.08
3 of 3
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