MBR20200CTF [SHIKUES]
SCHOTTKY BARRIER RECTIFIERS;
| 型号： | MBR20200CTF |
| 厂家： | 
SHIKUES Electronics |
| 描述： | SCHOTTKY BARRIER RECTIFIERS |
| 文件： | 总3页 (文件大小：370K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR2040CT/TF THRU MBR20200CT/TF
SCHOTTKY BARRIER RECTIFIERS
Reverse Voltage - 40 to 200 V
Forward Current - 20 A
FEATURES
• High current capability
• Low forward voltage drop
• Low power loss, high efficiency
• High surge capability
A1
A1
K
A2
K
A2
• High temperature soldering guaranteed
TO-220F
TO-220
• Mounting position: any
Mechanical data
A1
A2
• Case: TO-220
K
• Approx. Weight: 1.9g ( 0.067oz)
• Case: TO-220F
• Approx. Weight: 2.1g ( 0.07oz)
• Terminals: Lead solderable per MIL-STD-202, Method 208
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified
MBR2040CT
MBR2045CT
MBR2060CT MBR20100C T MBR20150CT MBR20200CT
TO-220
TO-220F MBR2040CTF
CHARACTERISTICS
Units
MBR2045CTF MBR2060CTF MBR20100CTF MBR20150CTF MBR20200CTF
Maximum Recurrent Peak Reverse Voltage
Maximum RMS voltage
VRRM
VRMS
VDC
40
28
40
45
31.5
45
60
42
60
100
70
150
105
150
200
140
200
V
V
V
A
Maximum DC Blocking Voltage
100
per diode
per device
10
20
Maximum Average Forward
Rectified Current
IF(AV)
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method) per diode
IFSM
150
A
Max Instantaneous
VF
IR
0.70
600
0.75
0.85
0.90
0.92
V
Forward Voltage at 10 A(per diode)
Ta = 25°C
Maximum DC Reverse Current
at Rated DC Reverse Voltage
0.1
20
0.05
20
mA
pF
Ta =125°C
Typical Junction Capacitance（1）
Typical Thermal Resistance（2）
400
Cj
°C/W
°C
RθJA
Tj
45
Operating Junction Temperature Range
Storage Temperature Range
-55 ~ +150
-55 ~ +150
-55 ~ +175
-55 ~ +175
Tstg
°C
（1）Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）P.C.B. mounted with 10cmX10cmX1mm copper pad areas.
REV.08
1 of 3
MBR2040CT/TF THRU MBR20200CT/TF
Fig.2 Typical Reverse Characteristics
Fig.1 TYPICAL FORWARD CURRENT DERATING CURVE
100
40~100V
150~200V
25
20
15
10
5
10
1.0
TJ=100°C
TJ=25°C
0.1
0.01
0.001
0.0
20 40 60 80 100 120 140 160 180
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage（%）
Fig.3 Typical Forward Characteristic(per leg)
Fig.4 Typical Junction Capacitance
TJ=25°C
TJ=25°C
30
20
1000
500
100
10
40~45V
60V
100V
150V
200V
40~45V
60~200V
20
10
1.0
0
0.3
0.6
0.9
1.2
1.5
0.1
1
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Fig.6- Typical Transient Thermal Impedance
160
140
120
100
80
100
10
60
40
20
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
0.01
1
10
100
0.1
1
10
100
Number of Cycles at 60Hz
t, Pulse Duration（sec）
REV.08
2 of 3
MBR2040CT/TF THRU MBR20200CT/TF
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
TO-220
10.45 (0.411)
9.85 (0.388)
4.76 (0.187)
4.42 (0.174)
1.40 (0.055)
1.14 (0.045)
TYP 3.7
2.80 (0.110)
2.20 (0.087)
1.77 (0.070)
1.14 (0.045)
0.94 (0.040)
0.62 (0.024)
0.64 (0.025)
0.35 (0.014)
Unit:inch (mm)
TYP 2.54
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
TO-220F
0.413 (10.5)
0.388 (9.85)
0.185 (4.7)
0.173 (4.4)
0.114 (2.9)
0.098 (2.5)
TYP 3.5
0.110 (2.8)
0.098 (2.5)
0.055 (1.4)
0.043 (1.1)
0.031 (0.8)
0.020 (0.5)
0.027 (0.70)
0.016 (0.41)
TYP 2.54
Unit:inch (mm)
1
2
3
REV.08
3 of 3
相关型号：
MBR20200CTF-E1
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, TO-220F, 3 PIN
DIODES
MBR20200CTF-G1
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, TO-220F, 3 PIN
DIODES
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