1N5403G [SHUNYE]

GLASS PASSIVATED SILICON RECTIFIER; 玻璃钝化硅整流
1N5403G
型号: 1N5403G
厂家: Shunye Enterprise    Shunye Enterprise
描述:

GLASS PASSIVATED SILICON RECTIFIER
玻璃钝化硅整流

二极管 测试
文件: 总2页 (文件大小:991K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1N5400G THRU 1N5408G  
GLASS PASSIVATED SILICON RECTIFIER  
Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes  
FEATURES  
DO-201AD  
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
Construction utilizes void-free  
molded plastic technique  
1.0 (25.4)  
MIN.  
Low reverse leakage  
High forward surge current capability  
High temperature soldering guaranteed:  
0.220 (5.6)  
0.197(5.0)  
DIA.  
250 C/10 seconds,0.375(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.375(9.5)  
0.285(7.2)  
MECHANICAL DATA  
1.0 (25.4)  
MIN.  
Case: JEDEC DO-201AD molded plastic body  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Method 2026  
0.052 (1.3)  
0.048 (1.2)  
DIA.  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Dimensions in inches and (millimeters)  
Weight:0.04 ounce, 1.10 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
SYMBOLS  
UNITS  
5408G  
5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VOLTS  
VOLTS  
VOLTS  
50 100 200 300 400 500 600 800 1000  
35 70 140 210 280 350 420 560 700  
VRRM  
VRMS  
VDC  
50 100 200 300 400 500 600 800 1000  
Maximum DC blocking voltage  
Maximum average forward rectified current  
0.375(9.5mm) lead length at TA=75 C  
Peak forward surge current  
I(AV)  
3.0  
Amps  
IFSM  
200  
1.2  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Amps  
Volts  
VF  
IR  
Maximum instantaneous forward voltage at 3.0A  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
5.0  
100  
µ
A
TA=100 C  
Typical junction capacitance (NOTE 1)  
CJ  
RθJA  
pF  
C/W  
C
30.0  
20.0  
Typical thermal resistance (NOTE 2)  
Operating junction and storage temperature range  
TJ,TSTG  
-65 to +175  
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
2.Thermal resistance from junction to ambient at 0.375(9.5mm)lead length,P.C.B. mounted  
www.shunyegroup.com  
RATINGS AND CHARACTERISTIC CURVES 1N5400G THRU 1N5408G  
FIG. 1- FORWARD CURRENT DERATING CURVE  
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD  
SURGE CURRENT  
200  
160  
120  
80  
3
2.4  
1.8  
1.2  
0.6  
0
Single Phase  
Half Wave 60Hz  
Resistive or  
inductive Load  
40  
0
8.3ms SINGLE HALF SINE-WAVE  
(JEDEC Method)  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
AMBIENT TEMPERATURE, C  
NUMBER OF CYCLES AT 60 Hz  
FIG. 3-TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
FIG. 4-TYPICAL REVERSE CHARACTERISTICS  
1,000  
100  
10  
20  
10  
TJ=150 C  
TJ=100 C  
TJ=25 C  
1
0.1  
TJ=25 C  
PULSE WIDTH=300 µs  
1
1%DUTY CYCLE  
0.1  
0.01  
0.01  
0.6  
0.8  
1.0  
1.2  
1.4  
1.5  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF PEAK REVERSE VOLTAGE,%  
FIG. 5-TYPICAL JUNCTION CAPACITANCE  
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE  
200  
100  
100  
10  
1
TJ=25 C  
10  
0.1  
0.01  
0.1  
1
10  
100  
1
0.1  
1.0  
10  
100  
REVERSE VOLTAGE,VOLTS  
t,PULSE DURATION,sec.  
www.shunyegroup.com  

相关型号:

1N5403G-B

3.0A GLASS PASSIVATED RECTIFIER
DIODES

1N5403G-E

GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A
GULFSEMI

1N5403G-T

3.0A GLASS PASSIVATED RECTIFIER
DIODES

1N5403GM

GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A
GULFSEMI

1N5403GP

Rectifier Diode, 1 Phase, 3A, Silicon, DO-201AD,
MICROSEMI

1N5403GPE3

Rectifier Diode, 1 Phase, 3A, Silicon, DO-201AD,
MICROSEMI

1N5403K

Silicon Rectifiers
DIOTEC

1N5403K

Standard silicon rectifier diodes
SEMIKRON

1N5403K

SILICON RECTIFIERS
SEMTECH

1N5403TRLEADFREE

Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-201AD,
CENTRAL

1N5404

3.0 AMP SILICON RECTIFIERS
UNIOHM

1N5404

SILICON RECTIFIER DIODES
SYNSEMI