BD501N [SHUNYE]
50 AMP BLOCK DIODES;
| 型号： | BD501N |
| 厂家： | 
Shunye Enterprise |
| 描述： | 50 AMP BLOCK DIODES |
| 文件： | 总2页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BD501N THRU BD501P
50 AMP BLOCK DIODES
特征 FEATURES
.大电流承受能力.High current capability
BLOCK DIODE
.高压利用能力.High voltage available
.玻璃被钝化的压模结构.Glass passivated die construction
.高浪涌承受能力.High surge current capability
.50 A 工作在表面温度是125℃,无热损耗的情况下.
50Ampere Operation At TL=125℃With No Thermal Runaway
机械数据 MECHANICAL DATA
.BD501N 代表阴性的
BD501-N N-Lead ,P-Case
.BD501P 代表阳性的
BD501-P P-Lead ,N-Case
Dimension in millimeters
极限值和电参数 TA= 25℃除非另有规定. 单相,正半弦波,60HZ,阻抗或电感负载.为电容装载,减少电流的20%
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ Ambient temp. Unless otherwise specified.Single phase, half sine wave, 60HZ,resistive or inductive load.
For capacitive load, derate current by 20%
UNITS
SYMBOL
BD501N
BD501P
最大峰值反向电压
Maximum Current Peak Reverse Voltage
VRRM
VRMS
VDC
Volts
Volts
Volts
100
70
100
70
最大反向有效电压
Maximum RMS Voltage
最大直流阻断电压
Maximum DC Blocking Voltage
100
100
最大正向平均整流电流TL=100℃
Maximum Average Forward Rectified
Current
I(AV)
Amps
50
正向峰值浪涌电流
Peak Forward Surge Current 8.3ms Single
Sine-wave on Rated Load (JEDEC Method)
IFSM
VF
Amps
Volts
uA
500
1.1
50A 直流电时最大正向瞬间电压降
Maximum Instantaneous Forward Voltage
Drop at 50A DC
最大反向漏电流
5
500
Maximum DC Reverse Current TA=25℃
IR
at Rated DC Blocking Voltage
TA=100℃
典型热阻抗
Typical thermal resistance
R
ΘJA
℃/W
1.0
工作温度存储温度
Operating AND Storage Temperature Range
TSTG/ TJ
℃
-55 to +150
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RATING ANDCHARACTERISTIC CURVES BD501N THRU BD501P
FIG. 1 –最大正向平均电流降额
FIG. 1 –MAXIMUM AVERAGE FORWARD CURRENT
DERATING
FIG. 2 –最大非重复正向浪涌电流
FIG. 2 –MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG. 3 –反向特性曲线(典型)
FIG. 4–正向特性曲线(典型)
FIG. 3 – TYPICA REVERSE CHARACTERISTICS
FIG.4 – TYPICA FORWARD CHARACTERISTICS
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