DF02DB103 [SHUNYE]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器
| 型号： | DF02DB103 |
| 厂家： | 
Shunye Enterprise |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DF005 THRU DF10 AND DB101 THRU DB107
SILICON BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
FEATURES
DB-1
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ideal for printed circuit boards
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,5 lbs. (2.3kg) tension
+
0.255(6.5)
0.245(6.2)
0.350(8.9)
0.300(7.6)
0.365(9.3)
0.355(9.0)
0.135(3.4)
0.115(2.9)
MECHANICAL DATA
0.165(4.2)
0.155(3.9)
0.020
(0.5)
Case: Molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
0.060
(1.5)
0.205(5.2)
0.195(5.0)
Polarity: Polarity symbols marked on case
Mounting Position: Any
Dimensions in inches and (millimeters)
Weight:0.04 ounce, 1.0 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load, for current capacitive load derate by 20%.
DF005 DF01 DF02 DF04 DF06 DF08 DF10
DB101 DB102 DB103 DB104 DB105 DB106 DB107
SYMBOLS
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
VOLTS
VOLTS
VOLTS
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800 1000
560 700
800 1000
Maximum DC blocking voltage
100
Maximum average forward output rectified current
0.06”(1.5mm) lead lenth at TA=40 C (Note 2)
Peak forward surge current
I(AV)
Amps
1.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
IFSM
50.0
A2s
I2t
Rating for Fusing(t<8.3ms)
10
Maximum instantaneous forward voltage drop
per birdge element at 1.0A
Volts
VF
1.1
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
u
A
10
0.5
IR
TA=100 C
mA
pF
C/W
C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating junction temperature range
storage temperature range
CJ
RqJA
TJ
25
40
-65 to +150
-65 to +150
TSTG
C
NOTES:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2.Unit mounted on P.C. board with 0.51” x 0.51”(13x13mm) copper pads.
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RATINGS AND CHARACTERISTIC CURVES DF005 THRU DF10 AND DB101 THRU DB107
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
50
40
30
20
1.0
0.8
0.6
0.4
0.2
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
10
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
20
10
1
0.1
TJ=100 C
TJ=25 C
PULSE WIDTH=300 ms
1%DUTY CYCLE
1
TJ=25 C
0.1
0.01
0.01
0.6
0.8
1.0
1.2
1.4
1.5
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
200
100
100
10
1
TJ=25 C
10
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
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