MBR4060 [SHUNYE]
40.0 AMP S . S c h o ttky Barrier Rectifiers;
| 型号： | MBR4060 |
| 厂家： | 
Shunye Enterprise |
| 描述： | 40.0 AMP S . S c h o ttky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：1183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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MBR4035
MBR40150
40.0 AMPS. Schottky Barrier Rectifiers
Features
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Plastic material used carries Underwriters Laboratory
Classifications 94V-0
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Metal silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
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High temperature soldering guaranteed:
o
260 C/10 seconds,0.17”(4.3mm)from case
Mechanical Data
TO-3P
body
Cases: JEDEC TO-3P molded plastic
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Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Dimensions in inches and (millimeters)
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Polarity: As marked
Mounting position: Any
Mounting torque: 10 in. - lbs. max
Weight: 0.2 ounce, 5.6 grams
Maximum Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR MBR MBR MBR MBR MBR MBR
4035 4045 4050 4060 4090 40100 40150
Symbol
Type Number
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
35
24
35
45
31
45
50
35
50
60
42
60
90
63
90
100
70
150
105
150
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
100
Maximum Average Forward Rectified Current
O
A
A
40
40
at Tc=125 C
I(AV)
IFRM
IFSM
Peak Repetitive Forward Current (Rated VR, Square
o
Wave, 20KHz) at Tc=120 C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
A
A
330
Peak Repetitive Reverse Surge Current (Note 1)
2.0
1.0
IRRM
Maximum Instantaneous Forward Voltage at (Note 2)
o
I =20A, Tc=25 C
F
0.75
0.65
0.80
0.75
0.77
0.84
0.95
0.92
1.02
0.98
o
I =20A, Tc=125 C
F
0.67
0.74
V
o
VF
I =40A, Tc=25 C
F
–
–
–
–
o
I =40A, Tc=125 C
F
Maximum Instantaneous Reverse Current
o
@ Tc=25 C at Rated DC Blocking Voltage Per Leg
1.0
0.5
10
mA
mA
IR
o
@ Tc=125 C (Note 1)
30
10,000
20
Voltage Rate of Change at (Rated VR)
1,000
V/uS
dV/dt
o
Typical Thermal Resistance Per Leg (Note 3)
1.2
C/W
R
θJC
o
Operating Junction Temperature Range
Storage Temperature Range
-65 to +150
-65 to +175
TJ
C
o
TSTG
C
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg
RATINGS AND CHARACTERISTIC CURVES
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
FIG.1- FORWARD CURRENT DERATING CURVE
SURGE CURRENT PER LEG
50
600
RESISTIVE OR
INDUCTIVE LOAD
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
500
40
30
400
300
20
10
0
200
100
0
1
0
50
100
150
10
100
CASE TEMPERATURE. (oC)
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
FIG.4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
50
10
50
10
Tj=1500C
Pulse Width=300
1% Duty Cycle
s
Tj=1250C
1
1
Tj=250C
Tj=750C
0.1
0.01
0.1
MBR4035-MBR4045
MBR4050 & MBR4060
MBR4090-MBR40150
Tj=250C
MBR4035-MBR4045
MBR4050 & MBR40100
0.01
0.001
0
20
40
60
80
100
120
140
0
1.0
1.2
1.1
0.1
0.9
0.6 0.7 0.8
0.2 0.3 0.4 0.5
FORWARD VOLTAGE. (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
5,000
100
10
1
Tj=250C
f=1.0MHz
Vsig=50mVp-p
1,000
MBR4035-MBR4045
MBR4050 & MBR4060
MBR4090-MBR40150
100
0.1
0.01
0.1
1
10
REVERSE VOLTAGE. (V)
100
0.1
1
10
100
T, PULSE DURATION. (sec)
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, Silicon, TO-220AB, PLASTIC PACKAGE-3
SENSITRON
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