SD101CW [SHUNYE]
SCHOTTKY DIODES; 肖特基二极管
| 型号： | SD101CW |
| 厂家： | 
Shunye Enterprise |
| 描述： | SCHOTTKY DIODES |
| 文件： | 总2页 (文件大小：894K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD101AW-SD101CW
SCHOTTKY DIODES
SOD-123
FEATURES
1.65(.065)
1.55(.061)
1.80(.071)
1.40(.055)
Low forward voltage drop
Guard ring construction for transient protection
Negligible reverse recovery time
3.86(0.152)
3.56(0.145)
3.9(0.154)
3.7(0.146)
2.84(0.112)
2.54(0.100)
2.7(0.106)
2.6(0.102)
MECHANICAL DATA
0.6(.023)
0.5(.020)
.71(0.028)
.50(0.020)
Case: Molded plastic body
.15(.006)
MAX
.135(.005)
.127(.004)
1.15(.045)
1.05(.041)
1.35(.053)
.94(.037)
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on case
Marking: SD101AW:S1, SD101BW:S2, SD101CW:S3
.25(.010)
MIN
Dimensions in millimeters and (inches)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum ratings and electrical characteristics, Single diode @TA=25C
SYMBOLS
UNITS
PARAMETER
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC Blocking voltage
SD101AW
SD101BW
SD101CW
VRRM
VRWM
VDC
VOLTS
60
42
50
40
28
RMS Reverse voltage
VR(RMS)
IFM
V
mA
mA
A
35
15
Forward continuous current
Repetitive peak forward current @t<1.0s
@t=10us
IFRM
50
2. 0
Power dissipation
Thermal resistance junction to ambient
Storage temperature
Pd
400
mW
C/W
C
RΘJA
TSTG
300
-65 to +125
Electrical ratings @TA=25C
SYMBOLS
Min.
Typ.
Max.
Unit
Conditions
PARAMETER
60
50
40
Reverse breakdown voltage
SD101AW
SD101BW
SD101CW
SD101AW
SD101BW
SD101CW
SD101AW
SD101BW
SD101CW
SD101AW
SD101BW
SD101CW
SD101AW
SD101BW
SD101CW
IR=10uA
IR=10uA
IR=10uA
IF=1.0mA
IF=1.0mA
IF=1.0mA
IF=15mA
IF=15mA
IF=15mA
VR=50V
VR=40V
VR=30V
V(BR)R
V
Fowrard voltage
0.41
0.40
0.39
1.00
0.95
0.90
VF
V
Reverse current
IRM
uA
pF
ns
0.2
Capacitance between terminals
Reverse recovery time
2.0
2.1
2.2
1.0
CT
trr
VR=0V,f=1.0MHz
IF=IR=5mA
Irr=0.1XIR,RL=100
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RATINGS AND CHARACTERISTIC CURVES SD101AW-SD101CW
FIG. 1- POWER DERATING CURVE
FIG. 2-TYPICAL FORWARD CHARACTERISTIC
500
400
10
See Note1
A
B
C
1.0
300
200
100
0
0.1
0.01
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
TA,AMBIENT TEMPERATURE( C)
VF FORWARD VOLTAGE(V)
FIG.3- TYPICAL TOTAL CAPACITANCE
VS REVERSE VOLTAGE
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
2
10
Tj=25
C
TA=125
C
f=1MHz
1
C
TA=75
C
B
A
0.1
1
TA=25
C
0.01
TA=0
C
0.001
TA=-65
40
C
0
0.0001
0
10
20
30
40
50
0
10
20
30
50
60
VR REVERSE VOLTAGE.(V)
VR REVERSE VOLTAGE.(V)
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