PA2423 [SIGE]
2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information; 2.4 GHz的蓝牙Class 1功率放大器IC生产信息
| 型号： | PA2423 |
| 厂家： | 
SIGE SEMICONDUCTOR, INC. |
| 描述： | 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information |
| 文件： | 总10页 (文件大小：351K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Applications
Product Description
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Bluetoothtm Class 1
USB Dongles
Laptops
Access Points
Cordless Piconets
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423MB is designed
for class
1
Bluetoothtm 2.4 GHz radio
applications. It delivers +22.7 dBm output power
with 45% power-added efficiency – making it
capable of overcoming insertion losses of up to
2.7 dB between amplifier output and antenna
input in class 1 Bluetoothtm applications.
The amplifier features:
Features
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an analog control input for improving PAE at
reduced output power levels;
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+22.7 dBm at 45% Power Added Efficiency
Low current 80mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
Single 3.3 V Supply Operation
a digital control input for controlling power up
and power down modes of operation.
An on-chip ramping circuit provides the turn-
on/off switching of amplifier output with less than
3dB overshoot, meeting the Bluetoothtm
specification 1.1.
Temperature Rating: -40C to +85C
8 lead Exposed Pad MSOP Plastic Package
The PA2423MB operates at 3.3V DC. At typical
output power level (+22.7 dBm), its current
consumption is 125 mA.
Ordering Information
The silicon/silicon-germanium structure of the
PA2423MB – and its exposed-die-pad package,
soldered to the system PCB – provide high
thermal conductivity and a subsequently low
junction temperature. This device is capable of
operating at a duty cycle of 100 percent.
Shipping
Method
Type
Package
PA2423MB
8 - MSOP
Tape and reel
Tubes -samples
PA2423MB-EV
Evaluation kit
Functional Block Diagram
VCC0 VRAMP
VCTL
Ramp
Circuitry
Bias Generator
IN
Interstage
Match
Stage 2
Stage 1
OUT/ VCC2
VCC1
GND
GND
DOC# 05PDS001 ꢁRev 9 ꢁ
07/26/2001
Page 1 of 10
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Pin Out Diagram – top view
VCTL
VRAMP
NC
1
8
OUT/VCC2
Die
Pad
2
3
7
6
NC
VCC1
IN
VCC0
4
5
Ground
Pin Out Description
Pin No.
Name
Description
Controls the output level of the power amplifier. An analog control signal between
0V and Vcc varies the PA output power between minimum and maximum values
Enable/Disable the power amplifier. A digital control signal with Vcc logic high
(power up) and 0V logic low (power down) is used to turn the device on and off.
1
VCTL
2
3
4
VRAMP
NC
No connection
Power amplifier RF input, external input matching network with DC blocking is
IN
required
5
6
7
Bias supply voltage
VCCO
VCC1
NC
Stage 1 collector supply voltage, external inter-stage matching network is required
No connection
PA Output and Stage2 collector supply voltage, external output matching network
with DC blocking is required
Heatslug Die Pad is ground
8
OUT/VCC2
GND
Die Pad
DOC# 05PDS001 ꢁRev 9 ꢁ
07/26/2001
Page 2 of 10
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Absolute Maximum Ratings
Symbol
Parameter
Min.
-0.3
Max.
Unit
V
Supply Voltage
+3.6
VCC
VCTL
VRAMP
IN
Control Voltage
-0.3
V
VCC
VCC
+8
Ramping Voltage
-0.3
V
RF Input Power
dBm
°C
°C
°C
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
TA
-40
-40
+85
+150
+150
TSTG
Tj
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This
device is a high performance RF integrated circuit with ESD rating < 600V and is ESD sensitive. Handling
and assembly of this device should be at ESD protected workstations.
DC Electrical Characteristics
Conditions: VCC0 = VCC1 = VCC2 = VRAMP = 3.3V, VCTL = 3.3V, PIN = +2dBm,TA =25°C, f = 2.45GHz,
Input and Output externally matched to 50Ω ,unless otherwise noted.
Symbol
Note
Parameter
Min. Typ. Max. Unit
VCC
ICC
Supply Voltage
3
3.3
3.6
V
1
Supply Current (ICC = IVCC0 + IVCC1 +I VCC2), VCTL = 3.3V
125
150
mA
Supply Current variation over temperature from TA = 25°C
(-40°C <TA <+85°C)
3
25
%
∆ICCtemp
VCTL
ICTL
PA Output Power Control Voltage Range
Current sourced by VCTL Pin
Logic High Voltage
0
VCC
250
V
µA
V
1
3
3
1
200
2.0
VRAMP
Logic Low Voltage
0.8
10
V
Istby
Leakage Current when Vramp = 0V, Vctl = high
0.5
µA
DOC# 05PDS001 ꢁRev 9 ꢁ
07/26/2001
Page 3 of 10
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
AC Electrical Characteristics
Conditions
VCC0 = VCC1 = VCC2 = VRAMP =3.3V, VCTL = 3.3V, PIN =+2 dBm, TA =25°C, f =2.45 GHz,
Input and Output externally matched to 50Ω, unless otherwise noted.
Symbol
Note
Parameter
Min. Typ.
MaxUnit
fL-U
3
Frequency Range
2400
2500
23.5
0
MHz
dBm
dBm
dB
1
1
3
Output Power @ PIN =+2 dBm, VCTL = 3.3V
Output Power @ PIN =+2 dBm, VCTL =0.4V
21
22.7
-20
1
Pout
∆Ptemp
2
Output Power variation over temperature (-40°C <TA <+85°C)
dPOUT /dVCTL
3
Control Voltage Sensitivity
120
dBm/V
%
PAE
Power Added Efficiency at +22.5 dBm Output Power
Gain Variation over band (2400-2500 MHz)
Harmonics
45
0.7
-35
25
GVAR
3
1.0
-30
dB
2f, 3f, 4f, 5f
IS21 IOFF
IS12I
3,4
2
dBc
dB
Isolation in “OFF” State, PIN = +2dBm, VRAMP = 0V
20
32
2
Reverse Isolation
42
dB
All non-harmonically related
outputs less than -50 dBc
STAB
2
Stability (PIN = +2dBm, Load VSWR = 6:1)
Notes: (1) Guaranteed by production test at TA =25°C.
(2) Guaranteed by design only
(3) Guaranteed by design and characterization
(4) Harmonic levels are greatly affected by topology of external matching networks.
DOC# 05PDS001 ꢁRev 9 ꢁ
07/26/2001
Page 4 of 10
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Typical Performance Characteristics
Test Conditions using SiGe PA2423MB-EV:
VCC0=VCC1=VCC2=VRAMP=3.3V, VCTL = 3.3V, PIN = +2 dBm, TA = 25°C, f =
2.45GHz, Input and Output externally matched to 50Ω, unless otherwise
noted.
Icc vs Frequency
Pout vs Frequency
140.00
130.00
120.00
110.00
100.00
90.00
23
22
21
20
19
18
17
16
15
80.00
70.00
60.00
2.3
2.3
2.4
2.4
2.5
2.5
2.6
2.6
2.7
2.3
2.3
2.4
2.4
2.5
2.5
2.6
2.6
2.7
Frequency (GHz)
Frequency (GHz)
PAE vs Input Power
Output Power, Gain vs Input Power
(Frequency=2.45GHz)
50
45
40
35
30
25
20
15
10
5
25
20
15
10
5
30.00
25.00
20.00
15.00
10.00
5.00
0
-28
-24
-20
-16
-12
-8
-4
0
4
8
Input Power(dBm)
0
-28
-24
-20
-16
-12
-8
-4
0
4
8
Pout
Gain
Input Power (dBm)
DOC# 05PDS001 ꢁRev 9 ꢁ
07/26/2001
Page 5 of 10
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Output Power vs Control Voltage
Pout, Icc vs Supply Voltage
25
20
24
23
22
21
20
19
18
17
16
15
14
150
142
134
126
118
110
102
94
15
10
5
0
-5
-10
-15
-20
-25
86
0.4
0.9
1.4
1.9
2.4
2.9
3.4
78
Vctl(V)
70
2.4
2.6
2.8
3
3.2
3.4
3.6
Pin=-4dBm
Pin=+2dBm
Pin=0dBm
Vcc(V)
Pout
Icc
RF Output Power vs Frequency
Supply Current vs. Control Voltage
30
25
140
20
15
120
100
80
60
40
20
0
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
0.4
0.9
1.4
1.9
2.4
2.9
3.4
Vctl(V)
Pin=-4dBm
Pin=0dBm
0
1
2
3
5
6
7
8
10
12 13 14 15
4 Frequency (9GHz)11
PA output spectrum with BT modulated signal
30
20
10
0
-10
-20
-30
-40
-50
-60
2.4475
2.4485
2.4495
2.4505
2.4515
2.4525
Frequency (GHz)
DOC# 05PDS001 ꢁRev 9 ꢁ
07/26/2001
Page 6 of 10
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Package Dimensions
The PA2423MB is packaged in a 3.0 mm x 3.0 mm 8 lead MSOP package. The underside of the package is an exposed die-pad structure. This allows
for direct soldering to the PCB for enhanced thermal conductivity. The package dimensions are shown in the drawing below.
DOC# 05PDS001 ꢁRev 9 ꢁ
07/26/2001
Page 7 of 10
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
MSOP 8 PCB Footprint Layout
Applications Information
For test and design purposes, SiGe Semiconductor offers an evaluation board for the PA2423MB. The
order part number is PA2423MB-EV. The evaluation board is intended to simplify the testing with respect to
RF performance of this power amplifier.
The application note, 05AN005 provides the supporting information for using the evaluation board. It
contains information on the schematic, bill of materials and recommended layout for the power amplifier and
the input and output matching networks. To assist in the design process, this layout is available, upon
request, in gerber file format.
In addition, a new optimized layout is available which reduces the number of components used. It achieves
this reduction by using printed inductors on the PCB. This layout is available as a gerber file to aid in a
quick design cycle. The application note, 05AN008, provides information on this space optimized layout.
Using VRAMP
VRAMP is a digital pin used to power-up and power-down the PA2423MB in Time Duplex systems such as
Bluetoothtm 1.1. During receive mode, VRAMP voltage is pulled down, PA2423MB acts as a 25 dB isolation
block between the radio and the antenna while consuming a modest 1uA. In transmit mode, VRAMP voltage is
pulled to VCC and PA2423MB offers 19 dB to 21dB of large signal gain. The rise and fall time are in the
order of 1-2usec.
Using VCTL
VCTL is an analog pin that is designed to control the gain of PA2423MB. Applying a voltage between 0V and
Vcc will adjust the gain between -15dB and 21 dB. Used in combination with a variable drive level to
DOC# 05PDS001 ꢁRev 9 ꢁ
07/26/2001
Page 8 of 10
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
PA2423MB, the VCTL function can greatly optimize the PAE of the system at all four Bluetoothtm transmitted
power levels.
By applying approximately 1.4V to VCTL, for example, a Class1 radio can be modified to a Class2 radio with
the PA2423MB consuming only 15mA.
By implementing a resistor DAC, the VCTL pin can interface with Bluetoothtm transceivers offering digital and
programmable outputs.
DOC# 05PDS001 ꢁRev 9 ꢁ
07/26/2001
Page 9 of 10
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
http://www.sige.com
Headquarters: Canada
Phone: +1 613 820 9244
Fax:
+1 613 820 4933
2680 Queensview Drive
Ottawa ON K2B 8J9 Canada
sales@sige.com
U.S.A.
United Kingdom
19925 Stevens Creek Blvd.
Suite 135
1010 Cambourne Business Park
Cambourne
Cupertino, CA 95014-2358
Cambridge CB3 6DP
Phone: +1 408 973 7835
Phone: +44 1223 598 444
Fax:
+1 408 973 7235
Fax:
+44 1223 598 035
Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor Inc.
assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any
infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by
implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor Inc. or third parties.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and
replaces all information previously supplied. SiGe Semiconductor Inc. products are NOT authorized for use in
implantation or life support applications or systems without express written approval from SiGe Semiconductor Inc.
The Bluetooth trademarks are owned by Bluetooth SIG Inc., USA.
Copyright 2001 SiGe Semiconductor
All Rights Reserved
DOC# 05PDS001 ꢁRev 9 ꢁ
07/26/2001
Page 10 of 10
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