S-5711A [SII]

HALL IC; 霍尔IC
S-5711A
型号: S-5711A
厂家: SEIKO INSTRUMENTS INC    SEIKO INSTRUMENTS INC
描述:

HALL IC
霍尔IC

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Rev.2.4_00  
HALL IC  
S-5711A Series  
The S-5711A Series, developed by CMOS technology, is a Hall IC with a  
high-sensitivity and operates on a low current.  
The output voltage changes when the S-5711A Series detects the intensity  
level of flux density. Using the S-5711A Series with a magnet makes it  
possible to detect the open/close state in various devices.  
High-density mounting is possible by using the super-small SNT-4A, SOT-  
23-3 packages. Also, the S-5711A Series is the most suitable for portable  
devices due to the low current consumption.  
„ Features  
Built-in chopping stabilized amplifier  
Applicable in various devices with wide range of option  
: Detection of both poles, south pole or north pole*1  
: Active “L”, active “H” *1  
: Nch open drain output, CMOS output  
Wide power supply voltage range : 2.4 V to 5.5 V  
Low current consumption :  
Range of operation temperature:  
5.0 µA typ., 8.0 µA max.  
40°C to +85°C  
Small magnetic characteristics against temperature dependency  
SNT-4A, SOT23-3  
Small package :  
Lead-free product  
*1. Selectable by option  
Please contact our sales office for options other than those specified in “„ Product Name Structure”, “2. Product  
name list”.  
„ Applications  
Cellular phones (flip type, slide type, etc.)  
Laptop PCs  
Digital video cameras  
Playthings, portable games  
Home appliances  
„ Packages  
Drawing Code  
Package Name  
Package  
Tape  
Reel  
Land  
PF004-A  
SNT-4A  
PF004-A  
MP003-C  
PF004-A  
MP003-C  
PF004-A  
MP003-Z  
SOT-23-3  
Seiko Instruments Inc.  
1
HALL IC  
S-5711A Series  
Rev.2.4_00  
„ Block Diagrams  
1. Nch open drain output product  
VDD  
OUT  
Sleep/Awake logic  
*1  
*1  
Chopping  
stabilized amplifier  
VSS  
*1. Parasitic diode  
Figure 1  
2. CMOS output product  
VDD  
*1  
Sleep/Awake logic  
*1  
OUT  
Chopping  
stabilized amplifier  
*1  
VSS  
*1. Parasitic diode  
Figure 2  
2
Seiko Instruments Inc.  
HALL IC  
Rev.2.4_00  
S-5711A Series  
„ Product Name Structure  
1. Product name  
(1) SNT-4A  
S-5711  
A
x
x
x
I4T1 G  
Package name (abbreviation) and packing specifications*1  
I4T1 : SNT-4A, Tape  
Detection logic for magnetism  
L : Active “L”  
H : Active “H”*2  
Pole detection  
D : Detection of both poles  
S : Detection of south pole  
N : Detection of north pole*2  
Output form  
N : Nch open drain output  
C : CMOS output  
*1. Refer to the tape specifications at the end of this book.  
*2. Selectable by option  
(2) SOT-23-3  
S-5711  
A
x
x
x
– M3T1 S  
Package name (abbreviation) and packing specifications*1  
M3T1 : SOT-23-3, Tape  
Detection logic for magnetism  
L : Active “L”  
H : Active “H”  
Pole detection  
D : Detection of both poles  
S : Detection of south pole  
N : Detection of north pole*2  
Output form  
N : Nch open drain output  
C : CMOS output  
*1. Refer to the tape specifications at the end of this book.  
*2. Selectable by option  
2. Product name list  
Table 1  
Output Form  
Pole Detection Detection Logic for Magnetism  
SNT-4A  
SOT-23-3  
Nch open drain output Both poles  
Active “L”  
Active “L”  
Active “H”  
Active “L”  
Active “L”  
S-5711ANDL-I4T1G S-5711ANDL-M3T1S  
S-5711ACDL-I4T1G S-5711ACDL-M3T1S  
CMOS output  
CMOS output  
Both poles  
Both poles  
S-5711ACDH-M3T1S  
Nch open drain output South pole  
CMOS output South pole  
S-5711ANSL-I4T1G S-5711ANSL-M3T1S  
S-5711ACSL-I4T1G S-5711ACSL-M3T1S  
Remark Please contact our sales office for options other than those specified above.  
Seiko Instruments Inc.  
3
HALL IC  
S-5711A Series  
Rev.2.4_00  
„ Pin Configurations  
SNT-4A  
Table 2  
Top view  
Pin No.  
Symbol  
VDD  
Pin Description  
Power supply pin  
GND pin  
No connection  
Output pin  
1
2
3
4
1
2
4
VSS  
NC*1  
3
OUT  
*1. The NC pin is electrically open.  
The NC pin can be connected to VDD or VSS.  
Figure 3  
Table 3  
SOT-23-3  
Top view  
Pin No.  
Symbol  
VSS  
VDD  
Pin Description  
1
1
2
3
GND pin  
Power supply pin  
Output pin  
OUT  
2
3
Figure 4  
4
Seiko Instruments Inc.  
HALL IC  
Rev.2.4_00  
S-5711A Series  
„ Absolute Maximum Ratings  
Table 4  
(Ta = 25°C unless otherwise specified)  
Item  
Symbol  
VDD  
Absolute Maximum Rating  
Unit  
Power supply voltage  
V
V
V
V
V
SS0.3 to VSS+7.0  
SS0.3 to VSS+7.0  
Nch open drain output  
CMOS output  
SNT-4A  
Output voltage  
VOUT  
PD  
V
SS0.3 to VDD+0.3  
300*1  
mW  
mW  
°C  
°C  
Power dissipation  
SOT-23-3  
430*1  
40 to +85  
40 to +125  
Operating ambient temperature  
Storage temperature  
Topr  
Tstg  
*1. When mounted on board  
[Mounted board]  
(1) Board size:  
(2) Name:  
114.3 mm × 76.2 mm × t1.6 mm  
JEDEC STANDARD51-7  
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical  
damage. These values must therefore not be exceeded under any conditions.  
600  
SOT-23-3  
400  
SNT-4A  
200  
0
100  
150  
50  
0
Ambient Temperature (Ta) [°C]  
Figure 5 Power Dissipation of Package (When Mounted on Board)  
Seiko Instruments Inc.  
5
HALL IC  
S-5711A Series  
Rev.2.4_00  
„ Electrical Characteristics  
1. Nch open drain output product  
Table 5  
(Ta = 25°C, VDD = 3.0 V, VSS = 0 V unless otherwise specified)  
Test  
Circuit  
Item  
Symbol  
Conditions  
Min.  
Typ.  
Max.  
Unit  
Power supply voltage VDD  
Current consumption IDD  
2.4  
1
3.0  
5.0  
130  
50  
5.5  
8.0  
1
V
1
2
2
Average value  
µA  
mA  
µA  
µs  
Output current  
IOUT  
ILEAK  
tAW  
Output transistor Nch, VOUT = 0.4 V  
Output transistor Nch, VOUT = 5.5 V  
Leakage current  
Awake mode time  
Sleep mode time  
tSL  
100  
ms  
2. CMOS output product  
Table 6  
(Ta = 25°C, VDD = 3.0 V, VSS = 0 V unless otherwise specified)  
Test  
Circuit  
Item  
Symbol  
Conditions  
Min.  
Typ.  
Max.  
Unit  
Power supply voltage VDD  
Current consumption IDD  
2.4  
1
3.0  
5.0  
130  
50  
5.5  
8.0  
1  
V
1
2
2
Average value  
µA  
mA  
mA  
µs  
Output transistor Nch, VOUT = 0.4 V  
Output transistor Pch, VOUT = VDD0.4 V  
Output current  
IOUT  
Awake mode time  
Sleep mode time  
tAW  
tSL  
100  
ms  
6
Seiko Instruments Inc.  
HALL IC  
Rev.2.4_00  
S-5711A Series  
„ Magnetic Characteristics  
1. Product with detection of both poles  
Table 7  
(Ta = 25°C, VDD = 3.0 V, VSS = 0 V unless otherwise specified)  
Test  
Item  
Operating point*1  
Symbol  
Conditions  
Min.  
Typ.  
Max.  
Unit  
Circuit  
S pole  
N pole  
S pole  
N pole  
S pole  
N pole  
BOPS  
BOPN  
BRPS  
BRPN  
BHYSS  
BHYSN  
6.0  
0.5  
3.8  
3.8  
2.8  
2.8  
1.0  
6.0  
0.5  
mT  
mT  
mT  
mT  
mT  
mT  
3
3
3
3
3
3
Release point*2  
BHYSS = BOPS BRPS  
BHYSN = |BOPN BRPN  
Hysteresis width*3  
|
1.0  
2. Product with detection of south pole  
Table 8  
(Ta = 25°C, VDD = 3.0 V, VSS = 0 V unless otherwise specified)  
Test  
Circuit  
Item  
Symbol  
Conditions  
Min.  
Typ.  
Max.  
Unit  
Operating point*1  
BOPS  
BRPS  
BHYSS  
0.5  
3.8  
2.8  
1.0  
6.0  
mT  
mT  
mT  
3
3
3
S pole  
S pole  
S pole  
Release point*2  
Hysteresis width*3  
BHYSS = BOPS BRPS  
3. Product with detection of north pole*4  
Table 9  
(Ta = 25°C, VDD = 3.0 V, VSS = 0 V unless otherwise specified)  
Test  
Circuit  
Item  
Symbol  
Conditions  
Min.  
Typ.  
Max.  
Unit  
Operating point*1  
BOPN  
BRPN  
BHYSN  
6.0  
3.8  
2.8  
1.0  
mT  
mT  
mT  
3
3
3
N pole  
N pole  
N pole  
0.5  
Release point*2  
Hysteresis width*3  
BHYSN = |BOPN BRPN|  
*1. BOPN, BOPS : Operating points  
The operating points are the values of magnetic flux density when the output voltage (VOUT) is inverted after the magnetic  
flux density applied to the S-5711A Series by the magnet (N or S pole) is increased (the magnet is moved closer).  
Even when the magnetic flux density exceeds BOPN or BOPS, VOUT retains the status.  
*2. BRPN, BRPS : Release points  
The release points are the values of magnetic flux density when the output voltage (VOUT) is inverted after the magnetic  
flux density applied to the S-5711A Series by the magnet (N or S pole) is decreased (the magnet is moved further away).  
Even when the magnetic flux density falls below BRPN or BRPS, VOUT retains the status.  
*3. BHYSN, BHYSS : Hysteresis widths  
B
HYSN and BHYSS are the difference between BOPN and BRPN, and BOPS and BRPS, respectively.  
*4. Selectable by option  
Remark The unit of magnetic density mT can be converted by using the formula 1 mT = 10 Gauss.  
Seiko Instruments Inc.  
7
HALL IC  
S-5711A Series  
Rev.2.4_00  
„ Test Circuits  
1.  
A
R*1  
100 k  
VDD  
S-5711A  
OUT  
VSS  
Series  
*1. Resistor (R) is unnecessary for the CMOS output product.  
Figure 6  
2.  
VDD  
S-5711A  
Series  
A
OUT  
VSS  
V
Figure 7  
3.  
R*1  
100 kΩ  
VDD  
S-5711A  
OUT  
VSS  
Series  
V
*1. Resistor (R) is unnecessary for the CMOS output product.  
Figure 8  
8
Seiko Instruments Inc.  
HALL IC  
Rev.2.4_00  
S-5711A Series  
„ Standard Circuit  
R*1  
100 k  
VDD  
S-5711A  
OUT  
VSS  
Series  
CIN  
0.1  
µ
F
*1. Resistor (R) is unnecessary for the CMOS output product.  
Figure 9  
Caution The above connection diagram and constant will not guarantee successful operation. Perform  
thorough evaluation using the actual application to set the constant.  
Seiko Instruments Inc.  
9
HALL IC  
S-5711A Series  
Rev.2.4_00  
„ Operation  
1. Direction of applied magnetic flux and position of Hall sensor  
The S-5711A Series detects the flux density which is vertical to the marking surface.  
In products with detection of both poles, the output voltage (VOUT) is inverted when the south or north pole is moved  
closer to the marking surface.  
In products with detection of the south pole, the output voltage (VOUT) is inverted when the south pole is moved closer to  
the marking surface.  
In products with detection of the north pole, the output voltage (VOUT) is inverted when the north pole is moved closer to  
the marking surface.  
Figures 10 and 11 show the direction in which magnetic flux is being applied.  
(1) SNT-4A  
(2) SOT-23-3  
N
S
N
S
Marking surface  
Marking surface  
Figure 10  
Figure 11  
Figures 12 and 13 show the position of Hall sensor.  
The center of this Hall sensor is located in the area indicated by a circle, which is in the center of a package as  
described below.  
The following also shows the distance (typ. value) between the marking surface and the chip surface of a package.  
(1) SNT-4A  
Top view  
(2) SOT-23-3  
Top view  
The center of Hall sensor;  
in this φ 0.3 mm  
The center of Hall sensor;  
1
in this φ 0.3 mm  
1
2
4
3
2
3
0.16 mm (typ.)  
0.7 mm (typ.)  
Figure 12  
Figure 13  
10  
Seiko Instruments Inc.  
HALL IC  
Rev.2.4_00  
S-5711A Series  
2. Basic operation  
The S-5711A Series changes the output voltage level (VOUT) according to the level of the magnetic flux density (north  
or south pole) applied by a magnet.  
The following explains the operation when the magnetism detection logic is active “L”.  
(1) Products with detection of both poles  
When the magnetic flux density vertical to the marking surface exceeds BOPN or BOPS after the south or north pole  
of a magnet is moved closer to the marking surface of the S-5711A Series, VOUT changes from “H” to “L”. When  
the south or north pole of a magnet is moved further away from the marking surface of the S-5711A Series and  
the magnetic flux density is lower than BRPN or BRPS, VOUT changes from “L” to “H”.  
(2) Products with detection of south pole  
When the magnetic flux density vertical to the marking surface exceeds BOPS after the south pole of a magnet is  
moved closer to the marking surface of the S-5711A Series, VOUT changes from “H” to “L”. When the south pole  
of a magnet is moved further away from the marking surface of the S-5711A Series and the magnetic flux density  
is lower than BRPS, VOUT changes from “L” to “H”.  
(3) Products with detection of north pole*1  
When the magnetic flux density vertical to the marking surface exceeds BOPN after the north pole of a magnet is  
moved closer to the marking surface of the S-5711A Series, VOUT changes from “H” to “L”. When the north pole  
of a magnet is moved further away from the marking surface of the S-5711A Series and the magnetic flux density  
is lower than BRPN, VOUT changes from “L” to “H”.  
*1. Selectable by option  
Seiko Instruments Inc.  
11  
HALL IC  
S-5711A Series  
Rev.2.4_00  
Figures 14 to 16 show the relationship between the magnetic flux density and VOUT  
.
(1) Products with detection of both poles  
VOUT  
BHYSN  
BHYSS  
H
L
S pole  
N pole  
BOPN BRPN  
0
BRPS  
BOPS  
Flux density (B)  
Figure 14  
(2) Products with detection of south pole  
(3) Products with detection of north pole  
VOUT  
VOUT  
BHYSN  
BHYSS  
H
H
L
L
N pole  
S pole  
N pole  
S pole  
BOPN BRPN  
0
0
BRPS  
BOPS  
Flux density (B)  
Flux density (B)  
Figure 15  
Figure 16  
12  
Seiko Instruments Inc.  
HALL IC  
Rev.2.4_00  
S-5711A Series  
3. Time dependency in the current consumption  
The S-5711A Series performs the intermittent operation. The S-5711A Series operates with low current consumption  
due to repeating the sleep mode (50 ms typ.) and the awake mode (130 µs typ.).  
Figure 17 shows the time dependency in the current consumption.  
Sleep mode time  
50 ms typ.  
Awake mode time  
Current consumption  
130 µs typ.  
At awake mode  
1.2 mA typ.  
At sleep mode  
1.8 µA typ.  
Time  
Figure 17  
Seiko Instruments Inc.  
13  
HALL IC  
S-5711A Series  
Rev.2.4_00  
4. Timing chart  
Figure 18 shows the operation timing of the S-5711A Series.  
BOPS  
BRPS  
Magnetic flux  
density applied to  
S-5711A Series  
BRPN  
BOPN  
Current consumption (IDD  
)
Output voltage (VOUT  
)
(both-pole detection,  
active “L” products)  
Output voltage (VOUT  
)
(south-pole detection,  
active “L” products)  
Output voltage (VOUT  
)
(both-pole detection,  
active “H” products)  
Figure 18  
14  
Seiko Instruments Inc.  
HALL IC  
Rev.2.4_00  
S-5711A Series  
„ Precautions  
If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by through-  
type current. Take care with the pattern wiring to ensure that the impedance of the power supply is low.  
Note that the IC may malfunction if the power supply voltage rapidly changes.  
Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic  
protection circuit.  
Large stress on this IC may affect on the magnetic characteristics. Avoid large stress which is caused by bend and  
distortion during mounting the IC on a board or handle after mounting.  
When designing for mass production using an application circuit described herein, the product deviation and  
temperature characteristics of the external parts should be taken into consideration. SII shall not bear any responsibility  
for patent infringements related to products using the circuits described herein.  
SII claims no responsibility for any disputes arising out of or in connection with any infringement by products including  
this IC of patents owned by a third party.  
Seiko Instruments Inc.  
15  
HALL IC  
S-5711A Series  
Rev.2.4_00  
„ Characteristics (Typical Data)  
1. Operating point, release point (BOP, BRP)  
2. Operating point, release point (BOP, BRP)   
Temperature (Ta)  
Power supply voltage (VDD)  
Detection of both poles  
Detection of both poles  
V
DD = 3.0 V  
Ta = +25°C  
6.0  
4.0  
6.0  
4.0  
BOPS  
B
OPS  
2.0  
2.0  
B
RPS  
BRPS  
0.0  
0.0  
B
RPN  
B
RPN  
2.0  
4.0  
6.0  
2.0  
4.0  
6.0  
B
OPN  
B
OPN  
40 25  
0
+
25  
+
50  
+
75  
+
85  
2.0  
3.0  
4.0  
5.0  
6.0  
Ta [°C]  
VDD [V]  
3. Current consumption (average) (IDD (average)) 4. Current consumption (average) (IDD (average))   
Temperature (Ta)  
Power supply voltage (VDD)  
12.0  
10.0  
8.0  
12.0  
10.0  
V
V
DD = 5.5 V  
Ta =  
+
85°C  
8.0  
6.0  
4.0  
2.0  
0.0  
V
DD = 3.0 V  
6.0  
Ta =  
+25°C  
4.0  
DD = 2.4 V  
Ta =  
40°C  
2.0  
0.0  
40 25  
0
+
25  
+
50  
+
75  
+
+
+
85  
85  
85  
2.0  
3.0  
4.0  
VDD [V]  
5.0  
6.0  
Ta [°C]  
5. Awake mode time (tAW  
)
Temperature (Ta)  
6. Awake mode time (tAW  
)
Power supply voltage (VDD)  
300  
250  
300  
250  
Ta =  
40°C  
V
DD = 2.4 V  
DD = 3.0 V  
200  
150  
100  
50  
200  
150  
100  
50  
V
V
DD = 5.5 V  
50  
Ta =  
3.0  
+85°C  
Ta =  
+
25°C  
0
0
40 25  
0
+
25  
+
+
75  
2.0  
4.0  
VDD [V]  
5.0  
6.0  
Ta [°C]  
7. Sleep mode time (tSL)  
Temperature (Ta)  
8. Sleep mode time (tSL)  
Power supply voltage (VDD)  
100  
100  
Ta =  
40°C  
80  
60  
40  
20  
0
80  
V
DD = 2.4 V  
DD = 3.0 V  
V
60  
40  
Ta =  
3.0  
+
85°C  
V
DD = 5.5 V  
Ta =  
4.0  
+
25°C  
20  
0
40 25  
0
+
25  
+
50  
+
75  
2.0  
5.0  
6.0  
Ta [°C]  
VDD [V]  
16  
Seiko Instruments Inc.  
HALL IC  
Rev.2.4_00  
S-5711A Series  
9. Start up response (Detection of both poles)  
(1) Active “L”, B > BOPS or B < BOPN  
(2) Active “L”, BRPN < B < BRPS  
Ta = +25°C  
Ta =  
+
25°C  
V
DD  
V
DD  
1 V / div.  
1 V / div.  
(= 3.0 V)  
(= 3.0 V)  
V
SS  
V
SS  
1 V / div.  
1 V / div.  
VOUT  
V
OUT  
VSS  
V
SS  
1 mA / div.  
0
1 mA / div.  
0
IDD  
IDD  
t (10 ms / div.)  
t (10 ms / div.)  
(3) Active “H”, B > BOPS or B < BOPN  
Ta = 25°C  
(4) Active “H”, BRPN < B < BRPS  
+
Ta = +25°C  
V
DD  
V
DD  
1 V / div.  
1 V / div.  
(= 3.0 V)  
(= 3.0 V)  
V
SS  
V
SS  
1 V / div.  
1 V / div.  
VOUT  
V
OUT  
VSS  
V
SS  
1 mA / div.  
0
1 mA / div.  
0
IDD  
IDD  
t (10 ms / div.)  
t (10 ms / div.)  
Seiko Instruments Inc.  
17  
HALL IC  
S-5711A Series  
Rev.2.4_00  
„ Marking Specifications  
(1) SNT-4A  
SNT-4A  
Top view  
(1) to (3) : Product code (Refer to Product name vs. Product code.)  
1
2
4
3
(1) (2) (3)  
Product name vs. Product code  
(a) Nch open drain output product  
Product Code  
Product Name  
(1)  
T
(2)  
(3)  
A
S-5711ANDL-I4T1G  
S-5711ANSL-I4T1G  
Z
Z
T
E
(b) CMOS output product  
Product Code  
Product Name  
(1)  
T
(2)  
Z
Z
(3)  
1
5
S-5711ACDL-I4T1G  
S-5711ACSL-I4T1G  
T
(2) SOT-23-3  
SOT-23-3  
Top view  
(1) to (3) : Product code (Refer to Product name vs. Product code.)  
(4) : Lot number  
1
(1) (2) (3) (4)  
2
3
Product name vs. Product code  
(a) Nch open drain output product  
Product Code  
Product Name  
(1)  
T
(2)  
Z
Z
(3)  
A
S-5711ANDL-M3T1S  
S-5711ANSL-M3T1S  
T
E
(b) CMOS output product  
Product Code  
Product Name  
(1)  
T
(2)  
Z
Z
(3)  
1
2
5
S-5711ACDL-M3T1S  
S-5711ACDH-M3T1S  
S-5711ACSL-M3T1S  
T
T
Z
18  
Seiko Instruments Inc.  
1.2±0.04  
3
4
+0.05  
-0.02  
0.08  
2
1
0.65  
0.48±0.02  
0.2±0.05  
No. PF004-A-P-SD-4.0  
SNT-4A-A-PKG Dimensions  
PF004-A-P-SD-4.0  
TITLE  
No.  
SCALE  
UNIT  
mm  
Seiko Instruments Inc.  
+0.1  
-0  
ø1.5  
4.0±0.1  
2.0±0.05  
0.25±0.05  
+0.1  
ø0.5  
-0  
4.0±0.1  
0.65±0.05  
1.45±0.1  
5°  
2
3
1
4
Feed direction  
No. PF004-A-C-SD-1.0  
TITLE  
SNT-4A-A-Carrier Tape  
PF004-A-C-SD-1.0  
No.  
SCALE  
UNIT  
mm  
Seiko Instruments Inc.  
12.5max.  
9.0±0.3  
Enlarged drawing in the central part  
ø13±0.2  
(60°)  
(60°)  
No. PF004-A-R-SD-1.0  
SNT-4A-A-Reel  
TITLE  
No.  
PF004-A-R-SD-1.0  
SCALE  
UNIT  
QTY.  
5,000  
mm  
Seiko Instruments Inc.  
0.52  
1.16  
0.52  
0.3  
0.3  
0.35  
Caution Making the wire pattern under the package is possible. However, note that the package  
may be upraised due to the thickness made by the silk screen printing and of a solder  
resist on the pattern because this package does not have the standoff.  
No. PF004-A-L-SD-3.0  
SNT-4A-A-Land Recommendation  
TITLE  
No.  
PF004-A-L-SD-3.0  
SCALE  
UNIT  
mm  
Seiko Instruments Inc.  
2.9±0.2  
1
2
3
+0.1  
-0.06  
0.16  
0.95±0.1  
1.9±0.2  
0.4±0.1  
No. MP003-C-P-SD-1.0  
TITLE  
SOT233-C-PKG Dimensions  
MP003-C-P-SD-1.0  
No.  
SCALE  
UNIT  
mm  
Seiko Instruments Inc.  
+0.1  
-0  
4.0±0.1  
2.0±0.1  
ø1.5  
0.23±0.1  
1.4±0.2  
+0.25  
ø1.0  
-0  
4.0±0.1  
3.2±0.2  
1
2
3
Feed direction  
No. MP003-C-C-SD-1.0  
TITLE  
SOT233-C-Carrier Tape  
MP003-C-C-SD-1.0  
No.  
SCALE  
UNIT  
mm  
Seiko Instruments Inc.  
12.5max.  
9.2±0.5  
Enlarged drawing in the central part  
ø13±0.2  
No. MP003-Z-R-SD-1.0  
TITLE  
SOT233-C-Reel  
MP003-Z-R-SD-1.0  
No.  
SCALE  
UNIT  
QTY.  
3,000  
mm  
Seiko Instruments Inc.  
·
·
The information described herein is subject to change without notice.  
Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein  
whose related industrial properties, patents, or other rights belong to third parties. The application circuit  
examples explain typical applications of the products, and do not guarantee the success of any specific  
mass-production design.  
·
·
·
When the products described herein are regulated products subject to the Wassenaar Arrangement or other  
agreements, they may not be exported without authorization from the appropriate governmental authority.  
Use of the information described herein for other purposes and/or reproduction or copying without the  
express permission of Seiko Instruments Inc. is strictly prohibited.  
The products described herein cannot be used as part of any device or equipment affecting the human  
body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus  
installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc.  
Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the  
failure or malfunction of semiconductor products may occur. The user of these products should therefore  
give thorough consideration to safety design, including redundancy, fire-prevention measures, and  
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.  
·

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