S-5732NNH1I-Y3B2U [SII]
HIGH-WITHSTAND VOLTAGE HIGH-SPEED;
| 型号： | S-5732NNH1I-Y3B2U |
| 厂家： | 
SEIKO INSTRUMENTS INC |
| 描述： | HIGH-WITHSTAND VOLTAGE HIGH-SPEED |
| 文件： | 总21页 (文件大小：1258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S-5732 I Series
HIGH-WITHSTAND VOLTAGE HIGH-SPEED
UNIPOLAR DETECTION TYPE HALL IC
www.sii-ic.com
© SII Semiconductor Corporation, 2016
Rev.2.1_00
This IC, developed by CMOS technology, is a unipolar detection type Hall IC with high-withstand voltage, high-speed
detection and high-accuracy magnetic characteristics.
The output voltage changes when this IC detects the intensity level of magnetic flux density. Using this IC with a magnet
makes it possible to detect the open / close and rotation status in various devices.
This IC includes an output current limit circuit.
This IC is available in various systems by using the insertion TO-92S package.
Due to its high-accuracy magnetic characteristics, this IC can make operation's dispersion in the system combined with
magnet smaller.
SII Semiconductor Corporation offers a "magnetism simulation service" that provides the ideal combination of magnets and
our Hall ICs for customer systems. Our magnetism simulation service will reduce prototype production, development period
and development costs. In addition, it will contribute to optimization of parts to realize high cost performance.
For more information regarding our magnetism simulation service, contact our sales office.
Features
• Pole detection*1:
Detection of S pole, detection of N pole
Active "L", active "H"
Nch open-drain output
Nch driver + built-in pull-up resistor
BOP = 3.0 mT typ.
• Detection logic for magnetism*1:
• Output form*1:
• Magnetic sensitivity*1:
BOP = 6.0 mT typ.
• Chopping frequency:
fC = 250 kHz typ.
• Output delay time:
tD = 16.0 μs typ.
• Power supply voltage range:
• Built-in regulator
VDD = 3.5 V to 26.0 V
• Built-in output current limit circuit
• Operation temperature range:
• Lead-free (Sn 100%), halogen-free
Ta = −40°C to +85°C
*1. The option can be selected.
Applications
• Home appliance
• DC brushless motor
• Housing equipment
• Industrial equipment
Packages
• TO-92S (Straight)
• TO-92S (Forming)
1
HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC
Rev.2.1_00
S-5732 I Series
Block Diagrams
1. Nch open-drain output product
VDD
OUT
Regulator
*1
Chopping
stabilized
Output current limit circuit
VSS
*1. Parasitic diode
Figure 1
2. Nch driver + built-in pull-up resistor product
VDD
OUT
Regulator
*1
Chopping
stabilized
amplifier
Output current limit circuit
VSS
*1. Parasitic diode
Figure 2
2
HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC
Rev.2.1_00
S-5732 I Series
Product Name Structure
1. Product name
S-5732
x
x
x
x
I
-
Y3
x
x
U
Environmental code
U: Lead-free (Sn 100%), halogen-free
Pin shape
2: Straight
3: Forming
Packing specifications
B: Bulk (500 pcs / bag)
Z: Tape and ammo (2000 pcs / case)
Package abbreviation
Y3: TO-92S
Operation temperature
I:
Ta = −40°C to +85°C
Magnetic sensitivity
1:
2:
B
B
OP = 3.0 mT typ.
OP = 6.0 mT typ.
Detection logic for magnetism
L: Active "L"
H: Active "H"
Pole detection
S: Detection of S pole
N: Detection of N pole
Output form
N: Nch open-drain output
R: Nch driver + built-in pull-up resistor
2. Packages
Table 1 Package Drawing Codes
Package Name
Bulk
Dimension
Tape
Ammo Packing
−
−
TO-92S (Straight)
YB003-A-P-SD
Tape and ammo
Bulk
YC003-A-C-SD
YC003-A-Z-SD
−
−
TO-92S (Forming)
YB003-B-P-SD
Tape and ammo
YC003-B-C-SD
YC003-B-Z-SD
3
HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC
Rev.2.1_00
S-5732 I Series
3. Product name list
3. 1 TO-92S (Straight)
Table 2
Detection Logic
for Magnetism
Magnetic
Sensitivity (BOP
Product Name*1
Output Form
Pole Detection
)
S-5732NSL1I-Y3n2U
S-5732NSL2I-Y3n2U
S-5732RSL1I-Y3n2U
S-5732RSL2I-Y3n2U
Nch open-drain output
Nch open-drain output
S pole
S pole
Active "L"
Active "L"
Active "L"
Active "L"
3.0 mT typ.
6.0 mT typ.
3.0 mT typ.
6.0 mT typ.
Nch driver + built-in pull-up resistor S pole
Nch driver + built-in pull-up resistor S pole
*1. "n" changes according to the packing specification as follows.
B: Bulk, Z: Tape and ammo
Remark Please contact our sales office for products other than the above.
3. 2 TO-92S (Forming)
Table 3
Detection Logic
for Magnetism
Magnetic
Sensitivity (BOP
Product Name*1
Output Form
Pole Detection
S pole
)
S-5732NSL1I-Y3n3U
Nch open-drain output
Active "L"
3.0 mT typ.
*1. "n" changes according to the packing specification as follows.
B: Bulk, Z: Tape and ammo
Remark Please contact our sales office for products other than the above.
Pin Configuration
1. TO-92S
Table 4
Pin No.
Symbol
VDD
Description
1
2
3
Power supply pin
GND pin
VSS
OUT
Output pin
Bottom view
3
1
2
Figure 3
4
HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC
Rev.2.1_00
S-5732 I Series
Absolute Maximum Ratings
Table 5
(Ta = +25°C unless otherwise specified)
Item
Power supply voltage
Output current
Symbol
VDD
Absolute Maximum Rating
VSS − 0.3 to VSS + 28.0
20
Unit
V
IOUT
mA
V
Nch open-drain output product
Nch driver + built-in pull-up resistor product
VSS − 0.3 to VSS + 28.0
VSS − 0.3 to VDD + 0.3
−40 to +85
Output voltage
VOUT
V
Operation ambient temperature
Topr
Tstg
°C
°C
Storage temperature
−40 to +125
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
Thermal Resistance Value
Table 6
Item
Symbol
θja
Condition
Min.
Typ.
153*1
Max.
Unit
Junction-to-ambient thermal resistance
*1. When not mounted on board
TO-92S
−
−
°C/W
Remark Refer to " Thermal Characteristics" for details of power dissipation.
5
HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC
Rev.2.1_00
S-5732 I Series
Electrical Characteristics
Table 7
(Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified)
Test
Circuit
Item
Symbol
VDD
Condition
Min.
3.5
−
Typ. Max. Unit
Power supply voltage
−
12.0 26.0
V
−
Nch open-drain output product
3.0
3.0
−
4.0
4.0
0.4
0.5
20
mA
1
1
2
2
2
3
Average value
Current consumption
Output voltage
IDD
Nch driver + built-in pull-up resistor product
Average value, VOUT = "H"
−
−
−
−
−
mA
V
Nch open-drain output product
Output transistor Nch, VOUT = "L", IOUT = 10 mA
Nch driver + built-in pull-up resistor product
Output transistor Nch, VOUT = "L", IOUT = 10 mA
Nch driver + built-in pull-up resistor product
VOUT
−
V
Output drop voltage
Leakage current
VD
−
mV
V
OUT = "H", VD = VDD − VOUT
Nch open-drain output product
Output transistor Nch, VOUT = "H" = 26.0 V
VOUT = 12.0 V
ILEAK
−
10
μA
Output limit current
Output delay time
Chopping frequency
Start up time
IOM
tD
fC
22
−
−
−
70
−
−
mA
μs
kHz
3
−
−
4
−
−
−
16.0
250
30
tPON
−
−
μs
Nch open-drain output product
C = 20 pF, R = 820 Ω
Nch driver + built-in pull-up resistor product
C = 20 pF
−
−
−
−
2.0
μs
μs
5
5
Output start up time
tR
6.0
Output fall time
Pull-up resistor
tF
RL
C = 20 pF, R = 820 Ω
Nch driver + built-in pull-up resistor product
−
7
−
10
2.0
13
μs
kΩ
5
−
S pole
BOPS
BRPS
Magnetic flux density
applied to this IC (B)
0
tD
tD
tF
tR
90%
)
Output voltage (VOUT
(Product with active "L")
10%
tD
tD
tR
tF
90%
)
Output voltage (VOUT
(Product with active "H")
10%
Figure 4 Operation Timing
6
HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC
Rev.2.1_00
S-5732 I Series
Magnetic Characteristics
1. Product with S pole detection
1. 1 Product with BOP = 3.0 mT typ.
Table 8
(Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified)
Item
Symbol
BOPS
Condition
Min.
1.2
0.8
−
Typ.
3.0
2.0
1.0
Max.
4.8
3.6
−
Unit
mT
mT
mT
Test Circuit
Operation point*1
S pole
S pole
S pole
−
−
4
4
4
Release point*2
Hysteresis width*3
BRPS
BHYSS
BHYSS = BOPS − BRPS
1. 2 Product with BOP = 6.0 mT typ.
Table 9
(Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified)
Item
Symbol
BOPS
Condition
Min.
3.0
2.5
−
Typ.
6.0
4.5
1.5
Max.
9.0
7.5
−
Unit
mT
mT
mT
Test Circuit
Operation point*1
S pole
S pole
S pole
−
−
4
4
4
Release point*2
Hysteresis width*3
BRPS
BHYSS
BHYSS = BOPS − BRPS
*1. BOPN, BOPS: Operation points
BOPN and BOPS are the values of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux
density applied to this IC by the magnet (N pole or S pole) is increased (by moving the magnet closer).
Even when the magnetic flux density exceeds BOPN or BOPS, VOUT retains the status.
*2. BRPN, BRPS: Release points
BRPN and BRPS are the values of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux
density applied to this IC by the magnet (N pole or S pole) is decreased (the magnet is moved further away).
Even when the magnetic flux density falls below BRPN or BRPS, VOUT retains the status.
*3. BHYSN, BHYSS: Hysteresis widths
BHYSN and BHYSS are the difference between BOPN and BRPN, and BOPS and BRPS, respectively.
Remark The unit of magnetic density mT can be converted by using the formula 1 mT = 10 Gauss.
7
HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC
Rev.2.1_00
S-5732 I Series
Test Circuits
A
R*1
820 Ω
VDD
S-5732
I Series
VSS
OUT
*1. Resistor (R) is unnecessary for Nch driver + built-in pull-up resistor product.
Figure 5 Test Circuit 1
VDD
S-5732
I Series
VSS
A
OUT
V
Figure 6 Test Circuit 2
VDD
S-5732
I Series
A
OUT
VSS
V
Figure 7 Test Circuit 3
R*1
820 Ω
VDD
S-5732
I Series
OUT
VSS
V
*1. Resistor (R) is unnecessary for Nch driver + built-in pull-up resistor product.
Figure 8 Test Circuit 4
8
HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC
Rev.2.1_00
S-5732 I Series
R*1
820 Ω
VDD
S-5732
OUT
I Series
VSS
C
20 pF
V
*1. Resistor (R) is unnecessary for Nch driver + built-in pull-up resistor product.
Figure 9 Test Circuit 5
Standard Circuit
R*1
820 Ω
VDD
S-5732
I Series
VSS
OUT
CIN
0.1
μ
F
*1. Resistor (R) is unnecessary for Nch driver + built-in pull-up resistor product.
Figure 10
Caution The above connection diagram and constant will not guarantee successful operation. Perform
thorough evaluation using the actual application to set the constant.
9
HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC
Rev.2.1_00
S-5732 I Series
Operation
1. Direction of applied magnetic flux
This IC detects the magnetic flux density which is vertical to the marking surface.
Figure 11 shows the direction in which magnetic flux is being applied.
N
S
Marking surface
Figure 11
2. Position of Hall sensor
Figure 12 shows the position of Hall sensor.
The center of this Hall sensor is located in the area indicated by a circle, which is in the center of a package as
described below.
The center of Hall sensor;
in this φ 0.3 mm
Figure 12
10
HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC
Rev.2.1_00
S-5732 I Series
3. Basic operation
This IC changes the output voltage (VOUT) according to the level of the magnetic flux density (N pole or S pole) applied
by a magnet.
The following explains the operation when the magnetism detection logic is active "L".
3. 1 Product with S pole detection
When the magnetic flux density of the S pole perpendicular to the marking surface exceeds the operation point
(BOPS) after the S pole of a magnet is moved closer to the marking surface of this IC, VOUT changes from "H" to "L".
When the S pole of a magnet is moved further away from the marking surface of this IC and the magnetic flux
density is lower than the release point (BRPS), VOUT changes from "L" to "H".
Figure 13 shows the relationship between the magnetic flux density and VOUT
.
VOUT
BHYSS
H
L
S pole
N pole
0
BRPS
BOPS
Magnetic flux density (B)
Figure 13
3. 2 Product with N pole detection
When the magnetic flux density of the N pole perpendicular to the marking surface exceeds the operation point
(BOPN) after the N pole of a magnet is moved closer to the marking surface of this IC, VOUT changes from "H" to "L".
When the N pole of a magnet is moved further away from the marking surface of this IC and the magnetic flux
density of the N pole is lower than the release point (BRPN), VOUT changes from "L" to "H".
Figure 14 shows the relationship between the magnetic flux density and VOUT
.
VOUT
BHYSN
H
L
S pole
N pole
BOPN BRPN
0
Magnetic flux density (B)
Figure 14
11
HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC
Rev.2.1_00
S-5732 I Series
4. Timing chart
Figure 15 shows the operation timing at power-on.
The initial output voltage at rising of power supply voltage (VDD) is either "H" or "L".
In case of B > BOPS (operation point) or B < BRPS (release point) at the time when the start up time (tPON) is passed after
rising of VDD, this IC outputs VOUT according to the applied magnetic flux density.
In case of BRPS < B < BOPS at the time when tPON is passed after rising of VDD, this IC maintains the initial output
voltage.
Product with S pole detection and active "L"
Product with S pole detection and active "H"
Power supply voltage
Power supply voltage
(VDD
)
(VDD
)
tPON
tPON
Output voltage (VOUT
)
)
Output voltage (VOUT
)
)
"H" / "L"
"L"
"H" / "L"
"H"
(B > BOPS
(B > BOPS
Output voltage (VOUT
)
)
Output voltage (VOUT
)
)
"H" / "L"
"H" / "L"
"L"
"H" / "L"
"H" / "L"
"H"
(B < BRPS
(B < BRPS
Output voltage (VOUT
)
)
Output voltage (VOUT
)
)
Latching
Latching
(BRPS < B < BOPS
(BRPS < B < BOPS
Figure 15
12
HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC
Rev.2.1_00
S-5732 I Series
Precautions
• If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by feed-
through current. Take care with the pattern wiring to ensure that the impedance of the power supply is low.
• Note that the IC may malfunction if the power supply voltage rapidly changes. When the IC is used under the
environment where the power supply voltage rapidly changes, it is recommended to judge the output voltage of the IC
by reading it multiple times.
• Note that the output voltage may rarely change if the magnetic flux density between the operation point and the release
point is applied to this IC continuously for a long time.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• Although this IC has a built-in output current limit circuit, it may suffer physical damage such as product deterioration
under the environment where the absolute maximum ratings are exceeded.
• The application conditions for the power supply voltage, the pull-up voltage, and the pull-up resistor should not exceed
the power dissipation.
• Large stress on this IC may affect on the magnetic characteristics. Avoid large stress which is caused by the handling
during or after mounting the IC on a board.
• SII Semiconductor Corporation claims no responsibility for any disputes arising out of or in connection with any
infringement by products including this IC of patents owned by a third party.
13
HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC
Rev.2.1_00
S-5732 I Series
Thermal Characteristics
1. TO-92S
Tj = +125°C max.
1.0
0.8
0.6
0.4
0.2
0
0.65 W
0
50
100
150
Ambient temperature (Ta) [C]
Figure 16 Power Dissipation of Package (When not mounted on board)
14
1.62max.
4.1max.
Marked side
0.55max.
0.65max.
0.51max.
0.48max.
1.27
No. YB003-A-P-SD-1.0
TITLE
TO92S-C-PKG Dimensions
YB003-A-P-SD-1.0
No.
ANGLE
UNIT
mm
SII Semiconductor Corporation
12.7±0.3
1.0max.
1.0max.
Marked side
Marked side
Marked side
Marked side
#
#
1.0max.
3 pin
1 pin
1.45max.
ø4.0±0.2
6.35±0.3
12.7±0.2
Marked side
Marked side
Marked side
Feed direction
No. YC003-A-C-SD-1.1
TITLE
TO92S-E-Radial Tape
YC003-A-C-SD-1.1
No.
ANGLE
mm
UNIT
SII Semiconductor Corporation
Spacer(Sponge)
15
310
35
Side spacer placed in front side
157
320
Space more than 4 strokes
162
333
43
No. YC003-A-Z-SD-1.0
TITLE
TO92S-E-Ammo Packing
YC003-A-Z-SD-1.0
No.
ANGLE
QTY.
2,000
mm
UNIT
SII Semiconductor Corporation
1.62max.
4.1max.
Marked side
0.55max.
0.65max.
0.48max.
0.51max.
2.5±0.3
1.27
No. YB003-B-P-SD-1.0
TITLE
TO92S-D-PKG Dimensions
YB003-B-P-SD-1.0
No.
ANGLE
UNIT
mm
SII Semiconductor Corporation
12.7±0.3
1.0max.
1.0max.
Marked side
Marked side
Marked side
Marked side
#
#
1.0max.
1 pin
3 pin
1.45max.
ø4.0±0.2
6.35±0.3
12.7±0.2
Marked side
Marked side
Marked side
Feed direction
No. YC003-B-C-SD-1.1
TITLE
TO92S-F-Radial Tape
YC003-B-C-SD-1.1
No.
ANGLE
mm
UNIT
SII Semiconductor Corporation
Spacer(Sponge)
15
310
35
Side spacer placed in front side
157
320
Space more than 4 strokes
162
333
43
No. YC003-B-Z-SD-1.0
TITLE
TO92S-F-Ammo Packing
YC003-B-Z-SD-1.0
No.
ANGLE
QTY.
2,000
mm
UNIT
SII Semiconductor Corporation
Disclaimers (Handling Precautions)
1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.
2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of
any specific mass-production design.
SII Semiconductor Corporation is not responsible for damages caused by the reasons other than the products or
infringement of third-party intellectual property rights and any other rights due to the use of the information described
herein.
3. SII Semiconductor Corporation is not responsible for damages caused by the incorrect information described herein.
4. Take care to use the products described herein within their specified ranges. Pay special attention to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
SII Semiconductor Corporation is not responsible for damages caused by failures and/or accidents, etc. that occur
due to the use of products outside their specified ranges.
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SII Semiconductor Corporation is not responsible for damages caused by unauthorized or unspecified use of our
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The user of these products should therefore take responsibility to give thorough consideration to safety design
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The information described herein does not convey any license under any intellectual property rights or any other
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described herein for the purpose of disclosing it to a third-party without the express permission of SII Semiconductor
Corporation is strictly prohibited.
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