S-80740SL-A4-X [SII]
HIGH-PRECISION VOLTAGE DETECTOR; 高精度电压检测器
| 型号： | S-80740SL-A4-X |
| 厂家： | 
SEIKO INSTRUMENTS INC |
| 描述： | HIGH-PRECISION VOLTAGE DETECTOR |
| 文件： | 总42页 (文件大小：327K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Contents
Features........................................................... 1
Applications ..................................................... 1
Pin Assignment................................................ 1
Block Diagram ................................................. 2
Selection Guide ............................................... 3
Output Configurations...................................... 4
Advantage over the S-805 Series.................... 5
Absolute Maximum Ratings............................. 6
Electrical Characteristics ................................. 7
Test Circuits................................................... 23
Technical Terms............................................ 24
Operation....................................................... 26
Dimensions.................................................... 28
Taping............................................................ 29
Magazine Dimensions ................................... 31
Markings........................................................ 32
Characteristics............................................... 33
Measuring Circuits......................................... 36
Application Circuit Examples......................... 37
Notes ............................................................. 39
Frequently Asked Questions......................... 40
S-807 Series will be summarized into S-808 Series.
*
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
The S-807 Series is an adjustment-free high-precision voltage detector
made using the CMOS process. The output voltage is fixed internally,
with an accuracy of ±2.4%. Two output types are available, Nch open-
drain and CMOS output (active “H” and “L”), both of which have various
product lineups. This series features much lower current consumption
and higher detection voltage accuracy than the S-805 Series. Super-
miniature package is added for the S-807 Series, the S-807XXSX
Series. This small SOT-23-5 style package allows the designer to
shrink the size of his finished product. Electrical specs for the S-
807XXSX Series are the same as the standard S-807 Series. Output
forms of the S-807XXSX Series are Nch open-drain and CMOS active
“L”.
Features
Applications
• Ultra-low current consumption
1.0 µA typ. (VDD=4.5 V)
• Battery checker
• Battery backup for memories
• High-precision detection voltage ±2.4%
• Power failure detector
• Reset for microcomputer
• Store signal detector for non-
volatile RAM
• Wide operating voltage range
• Good hysteresis characteristics
1.0 to 15 V
5% typ.
• Wide operating temperature range -30°C to+80°C
• 3 output forms : Nch open-drain, CMOS output active H ,
active L
• TO-92, SOT-89-3 and SOT-23-5 package
Pin Assignment
(1) TO-92
(2) SOT-89-3
Top view
(3) SOT-23-5
Top view
1 OUT
2 VDD
3 VSS
5
4
1 OUT
2 VDD
3 VSS
1 OUT
2 VDD
3 VSS
4
5
NC
NC
1
2
3
1
2
3
Bottom view
1
2 3
Figure 1
Seiko Instruments Inc.
1
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
Block Diagram
(1) Nch open-drain output
2
VDD
-
1
OUT
+
3
2
VSS
(2) CMOS active low output
VDD
*
-
OUT
1
+
VSS
3
2
(3) CMOS active high output
VDD
*
-
1
OUT
+
3
VSS
* Parasitic diode
Figure 2
2
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
Selection Guide
Table 1
Detection Hysteresis
CMOS output (Low)
SOT-89-3*
CMOS output (High)
Nch open-drain
voltage
width
range (V)
typ. (V)
TO-92
SOT-23-5*
TO-92
SOT-89-3*
TO-92
SOT-89-3*
SOT-23-5*
S-80715AL-AC-X
S-80716AL-AD-X
S-80715AN-DC-X
0.075
0.08
1.5 V±2.4%
1.6 V±2.4%
1.7 V±2.4%
1.8 V±2.4%
1.9 V±2.4%
2.0 V±2.4%
2.1 V±2.4%
2.2 V±2.4%
2.3 V±2.4%
2.4 V±2.4%
2.5 V±2.4%
2.6 V±2.4%
2.7 V±2.4%
2.8 V±2.4%
2.9 V±2.4%
3.0 V±2.4%
3.1 V±2.4%
3.2 V±2.4%
3.3 V±2.4%
3.4 V±2.4%
3.5 V±2.4%
3.6V±2.4%
3.7V±2.4%
3.8 V±2.4%
3.9 V±2.4%
4.0 V±2.4%
4.1 V±2.4%
4.2 V±2.4%
4.3 V±2.4%
4.4 V±2.4%
S-80716AN S-80716AN-DD-X
S-80717AN S-80717AN-DE-X S-80717SN-DE-X
S-80718AH-BF-T1 S-80718AN S-80718AN-DF-X
S-80719AN S-80719AN-DG-X S-80719SN-DG-X
S-80717AL S-80717AL-AE-X
0.085
0.09
S-80718AL S-80718AL-AF-X S-80718SL-AF-X
S-80719AL S-80719AL-AG-X S-80719SL-AG-X
S-80720AL-AH-X S-80720SL-AH-X
0.095
0.1
S-80720AN S-80720AN-DH-X S-80720SN-DH-X
S-80721AN S-80721AN-DJ-X S-80721SN-DJ-X
S-80722AN S-80722AN-DK-X
S-80721AL S-80721AL-AJ-X S-80721SL-AJ-X
S-80722AL S-80722AL-AK-X
0.105
0.11
S-80723AL S-80723AL-AL-X S-80723SL-AL-X
S-80724AL S-80724AL-AM-X
S-80723AN S-80723AN-DL-X S-80723SN-DL-X
S-80724AN S-80724AN-DM-X S-80724SN-DM-X
S-80725AH-BN-X S-80725AN S-80725AN-DN-X S-80725SN-DN-X
S-80726AN S-80726AN-DP-X
0.115
0.12
S-80725AL S-80725AL-AN-X S-80725SL-AN-X
S-80726AL-AP-X
0.125
0.13
S-80727AL S-80727AL-AQ-X S-80727SL-AQ-X
S-80728AL-AR-X S-80728SL-AR-X
S-80727AN S-80727AN-DQ-X S-80727SN-DQ-X
S-80728AN S-80728AN-DR-X S-80728SN-DR-X
S-80729AN-DS-X
0.135
0.14
S-80729AL S-80729AL-AS-X
0.145
0.15
S-80730AL S-80730AL-AT-X S-80730SL-AT-X
S-80731AL S-80731AL-AV-X
S-80730AN S-80730AN-DT-X S-80730SN-DT-X
S-80731AH S-80731AH-BV-X S-80731AN S-80731AN-DV-X
S-80732AN S-80732AN-DW-X
0.155
0.16
S-80732AL S-80732AL-AW-X S-80732SL-AW-X
S-80733AL S-80733AL-AX-X S-80733SL-AX-X S-80733AH
S-80734AL S-80734AL-AY-X
S-80733AN S-80733AN-DX-X S-80733SN-DX-X
S-80734AN S-80734AN-DY-X
0.165
0.17
S-80735AL S-80735AL-AZ-X S-80735SL-AZ-X
S-80736AL-A0-X
S-80735AN S-80735AN-DZ-X S-80735SN-DZ-X
S-80736AN S-80736AN-D0-X
0.175
0.18
S-80737AL S-80737AL-A1-X
S-80737AN S-80737AN-D1-X
0.185
0.19
S-80738AL S-80738AL-A2-X
S-80738AN S-80738AN-D2-X
S-80739AL S-80739AL-A3-X
S-80739AN S-80739AN-D3-X
0.195
0.2
S-80740AL S-80740AL-A4-X S-80740SL-A4-X S-80740AH S-80740AH-B4-X S-80740AN S-80740AN-D4-X S-80740SN-D4-X
S-80741AL S-80741AL-A5-X
S-80741AN S-80741AN-D5-X
0.205
0.21
S-80742AL S-80742AL-A6-X S-80742SL-A6-X
S-80743AL S-80743AL-A7-X
S-80742AN S-80742AN-D6-X S-80742SN-D6-X
S-80743AN S-80743AN-D7-X
0.215
0.22
S-80744AL S-80744AL-A8-X
S-80744AN S-80744AN-D8-X S-80744SN-D8-X
S-80744HL S-80744HL-U8-X
4.295
to
4.605
Release
voltage
4.70 max.
S-80745AL S-80745AL-A9-X S-80745SL-A9-X
S-80746AL S-80746AL-EA-X
S-80747AL S-80747AL-EB-X
S-80748AL-EC-X
S-80745AH-B9-X S-80745AN S-80745AN-D9-X S-80745SN-D9-X
S-80746AN-JA-X
0.225
0.23
4.5 V±2.4%
4.6 V±2.4%
4.7 V±2.4%
4.8 V±2.4%
4.9 V±2.4%
5.0 V±2.4%
5.1 V±2.4%
5.2 V±2.4%
5.3 V±2.4%
5.5 V±2.4%
6.1 V±2.4%
6.3 V±2.4%
7.7V±2.4%
S-80747AN-JB-X
0.235
0.24
S-80748AN S-80748AN-JC-X
S-80749AN-JD-X
S-80749AL-ED-X
0.245
0.25
S-80750AL-EE-X S-80750SL-EE-X
S-80750AN S-80750AN-JE-X S-80750SN-JE-X
S-80751AN S-80751AN-JF-X S-80751SN-JF-X
S-80752AN-JG-T1
S-80751AL
S-80751SL-EF-X
0.255
0.26
S-80752AL-EG-T1 S-80752SL-EG-T1
S-80753AN
0.265
0.275
0.305
0.315
0.385
S-80755AL-EK-X
S-80761SL-ER-X
S-80763AN-JT-X
S-80777SN-J8-X
*
The last digit of the model name changes depending upon the packing form when it is an SOT package product (S-807XXSX
Series is packed on tape).
S : Stick
T
: Tape (T1 and T2 types are available depending on the direction of detectors on the tape.)
** Please ask our sales person if you need another detection voltage product.
Seiko Instruments Inc.
3
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
Output Configurations
1. S-807 Series model numbering conventions
Nch open-drain
CMOS output
CMOS output
(“L” reset type)
(“L” reset type)
(“H” reset type)
“N” is the last letter of
the model number.
Ex. S-80732AN
“L” is the last letter of
the model number.
Ex. S-80718AL
“H” is the last letter of
the model number.
Ex. S-80740AH
S-807 Series
2. Output configurations and their implementations
Implementation
With different power supplies
With active low reset CPUs
Nch
CMOS (“L”) CMOS (“H”)
×
×
×
With active high reset CPUs
As power resets employing CR circuits
×
×
×
×
×
×
With voltage divider resistors to vary (-VDET
)
• Example with two power supplies
• Examples with one power supply
VDD
1
VDD
2
VDD
VDD
V / D
Nch
V / D
CMOS
V / D
CPU
CPU
CPU
Nch
OUT
OUT
OUT
VSS
VSS
VSS
or
Figure 3
4
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
Advantage over the S-805 Series
The S-807 Series, in comparison with conventional reset ICs such as the S-805 Series, offers greater detection voltage precision
(twice that of conventional units) and lower current consumption (half that of conventional units). These characteristics result in
the following advantages over conventional units.
1. Advantages of greater detection voltage precision
1.1 Detecting lithium battery service life
S-807
V
The discharge characteristics of lithium batteries are
shown in Figure 4. When using the S-805 Series,
the service life can be detected over t1. When
using the S-807 Series, it can be detected over t2.
This improvement in detection precision of the S-
807 Series means that batteries can be used over
more of their service life.
S-805
t2
t1
t
Figure 4
1.2 Detecting a power voltage at two points
It is usual for the CPU to detect the power voltage
at two points, one to caution and the other to reset.
The service life of battery may also be detected at
two points, one to caution and the other to request
immediate replacement.
V
No. 2
No. 1
Two voltage values to be detected (No. 1 and No.
2) do not cross and the voltage can be detected
correctly.
Must be close
t
Figure 5
1.3 Voltage drop when modifying detection voltage
If no voltage to be detected is suitable, the voltage
can be set higher in Nch open-drain output
products by using a resistor divider. (Example :
when detecting 6V or 9V.)
R1
S-807
XXAN/SN
R2
When 8V is detected using the S-8054HN (a
4V±5% device), the -Vdet tolerance becomes
2×4.00×±0.05=0.8V (R1=R2). In constrast, the S-
80740AN (a 4V±2.4% device) can hold down the
tolerance to 2×4.00×±0.024=0.384V (R1=R2).
Nch open-drain
output product
Figure 6
Seiko Instruments Inc.
5
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
1.4 Operating margins of power and minimum operating voltage
of CPU are close
V
5 V
Set the voltage so that it will be detected between the power
voltage and the minimum operating voltage of the CPU.
Thus, if two voltage points to be detected are very close, the
voltage between those two points must be detected
correctly. The S-807 Series offers an excellent detection
voltage precision, so the voltage between narrow limits can
be detected correctly.
Min. operating
voltage of CPU
Reset voltage to be detected
t
Figure 7
2. Others
2.1 Low current consumption
The current consumption is half of that of a conventional voltage detection IC, so the battery service life can be
prolonged.
2.2 Wide operating voltage range
The maximum operating voltage of a conventional IC is 10 V. For the S-807 Series, the maximum detectable voltage
has been increased to 15 V.
Absolute Maximum Ratings
(Unless otherwise specified : Ta=25°C)
Caution : Keep static electricity to a minimum.
Parameter
Power supply voltage
Input voltage
Symbol
VDD-VSS
VIN
Ratings
18
Unit
V
VSS-0.3 to VDD+0.3
Output
voltage
Nch
open-drain
VOUT
VSS-0.3 to 18
CMOS
VSS-0.3 to VIN+0.3
Output current
IOUT
50
200
mA
Power dissipation
PD TO-92, SOT-89-3
mW
SOT-23-5
Topr
150
Operating temperature
Storage temperature
-30 to +80
-40 to +125
°C
Tstg
6
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
Electrical Characteristics
1. S-80715AL-AC-X, S-80715AN-DC-X (Detection voltage : 1.464 to 1.536 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
1.464
-VDET
×0.02
1.500
-VDET
×0.05
1.4
1.536
-VDET
×0.08
3.5
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 3.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
V
DD = 1.2 V
DD = 4.8 V
0.50
0.62
DS = 0.5 V
Pch (CMOS
output)
V
0.36
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
Ta=-30°C to 80°C
±0.19
mV/°C
2. S-80716AL-AD-X, S-80716AN/AN-DD-X (Detection voltage : 1.561 to 1.639 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
1.561
-VDET
×0.02
1.600
-VDET
×0.05
1.4
1.639
-VDET
×0.08
3.5
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 3.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
V
DD = 1.2 V
DD = 4.8 V
0.50
0.62
DS = 0.5 V
Pch (CMOS
output)
V
0.36
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.20
mV/°C
∆-VDET
∆Ta
3. S-80717AL/AL-AE-X, S-80717AN/AN-DE-X, S-80717SN-DE-X (Detection voltage : 1.659 to 1.741 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
1.659
-VDET
×0.02
1.700
-VDET
×0.05
1.4
1.741
-VDET
×0.08
3.5
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 3.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
V
DD = 1.2 V
DD = 4.8 V
0.50
0.62
DS = 0.5 V
Pch (CMOS
output)
V
0.36
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.21
mV/°C
∆-VDET
∆Ta
Seiko Instruments Inc.
7
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
4. S-80718AL/AL-AF-X, S-80718AN/AN-DF-X, S-80718SL-AF-X (Detection voltage : 1.756 to 1.844 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
1.756
-VDET
×0.02
1.800
-VDET
×0.05
1.4
1.844
-VDET
×0.08
3.5
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 3.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
V
DD = 1.2 V
DD = 4.8 V
0.50
0.62
DS = 0.5 V
Pch (CMOS
output)
V
0.36
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
Ta=-30°C to 80°C
±0.23
mV/°C
5. S-80718AH-BF-T1 (Detection voltage : 1.756 to 1.844 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
VDD = 3.0 V
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
1.756
-VDET
×0.02
1.800
-VDET
×0.05
1.4
1.844
-VDET
×0.08
3.5
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
µA
V
mA
2
1
4
1.0
0.03
15.0
Pch
V
Nch
V
V
DD = 1.2 V
DD = 4.8 V
0.09
8.36
DS = 0.5 V
V
4.06
3
DS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.23
mV/°C
∆-VDET
∆Ta
6. S-80719AL/AL-AG-X, S-80719AN/AN-DG-X
S-80719SL-AG-X, S-80719SN-DG-X (Detection voltage : 1.854 to 1.946 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
1.854
-VDET
×0.02
1.900
-VDET
×0.05
1.4
1.946
-VDET
×0.08
3.5
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 3.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
V
DD = 1.2 V
DD = 4.8 V
0.50
0.62
DS = 0.5 V
Pch (CMOS
output)
V
0.36
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.24
mV/°C
∆-VDET
∆Ta
8
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
7. S-80720AL-AH-X, S-80720AN/AN-DH-X
S-80720SL-AH-X, S-80720SN-DH-X (Detection voltage : 1.952 to 2.048 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
1.952
-VDET
×0.02
2.000
-VDET
×0.05
1.4
2.048
-VDET
×0.08
3.5
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 3.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
V
DD = 1.2 V
DD = 4.8 V
0.50
0.62
DS = 0.5 V
Pch (CMOS
output)
V
0.36
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.25
mV/°C
∆-VDET
∆Ta
8. S-80721AL/AL-AJ-X, S-80721AN/AN-DJ-X
S-80721SL-AJ-X, S-80721SN-DJ-X (Detection voltage : 2.049 to 2.151 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
2.049
-VDET
×0.02
2.100
-VDET
×0.05
1.4
2.151
-VDET
×0.08
3.5
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
V
DD = 1.2 V
DD = 4.8 V
0.50
0.62
DS = 0.5 V
Pch (CMOS
output)
V
0.36
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.26
mV/°C
∆-VDET
∆Ta
9. S-80722AL/AL-AK-X, S-80722AN/AN-DK-X (Detection voltage : 2.147 to 2.253 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
2.147
-VDET
×0.02
2.200
-VDET
×0.05
1.4
2.253
-VDET
×0.08
3.5
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
V
DD = 1.2 V
DD = 4.8 V
0.50
0.62
DS = 0.5 V
Pch (CMOS
output)
V
0.36
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.28
mV/°C
∆-VDET
∆Ta
Seiko Instruments Inc.
9
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
10. S-80723AL/AL-AL-X, S-80723AN/AN-DL-X
S-80723SL-AL-X, S-80723SN-DL-X (Detection voltage : 2.244 to 2.356 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
2.244
-VDET
×0.02
2.300
-VDET
×0.05
1.4
2.356
-VDET
×0.08
3.5
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
V
DD = 1.2 V
DD = 4.8 V
0.50
0.62
DS = 0.5 V
Pch (CMOS
output)
V
0.36
4
VDS = 0.5 V
∆-VDET
∆Ta
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.29
mV/°C
11. S-80724AL/AL-AM-X, S-80724AN/AN-DM-X, S-80724SN-DM-X (Detection voltage : 2.342 to 2.458 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
2.342
-VDET
×0.02
2.400
-VDET
×0.05
1.4
2.458
-VDET
×0.08
3.5
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
V
DD = 1.2 V
DD = 4.8 V
0.50
0.62
DS = 0.5 V
Pch (CMOS
output)
V
0.36
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.30
mV/°C
∆-VDET
∆Ta
12. S-80725AL/AL-AN-X, S-80725AN/AN-DN-X
S-80725SL-AN-X, S-80725SN-DN-X (Detection voltage : 2.440 to 2.560 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
2.440
-VDET
×0.02
2.500
-VDET
×0.05
1.4
2.560
-VDET
×0.08
3.5
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
V
DD = 1.2 V
DD = 4.8 V
0.50
0.62
DS = 0.5 V
Pch (CMOS
output)
V
0.36
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.31
mV/°C
∆-VDET
∆Ta
10
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
13. S-80725AH-BN-X (Detection voltage : 2.440 to 2.560 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
VDD = 4.5 V
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
2.440
-VDET
×0.02
2.500
-VDET
×0.05
1.4
2.560
-VDET
×0.08
3.5
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
µA
V
mA
2
1
4
1.0
0.03
15.0
Pch
V
Nch
V
V
DD = 1.2 V
DD = 4.8 V
0.09
8.36
DS = 0.5 V
V
4.06
3
DS = 0.5 V
∆-VDET
∆Ta
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.31
mV/°C
14. S-80726AL-AP-X, S-80726AN/AN-DP-X (Detection voltage : 2.537 to 2.663 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
2.537
-VDET
×0.02
2.600
-VDET
×0.05
1.0
2.663
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
V
DD = 1.2 V
DD = 4.8 V
0.50
0.62
DS = 0.5 V
Pch (CMOS
output)
V
0.36
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.33
mV/°C
∆-VDET
∆Ta
15. S-80727AL/AL-AQ-X, S-80727AN/AN-DQ-X
S-80727SL-AQ-X, S-80727SN-DQ-X (Detection voltage : 2.635 to 2.765 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
2.635
-VDET
×0.02
2.700
-VDET
×0.05
1.0
2.765
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
1.60
0.36
3.70
0.62
Pch (CMOS
output)
VDD = 4.8 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.34
mV/°C
∆-VDET
∆Ta
Seiko Instruments Inc.
11
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
16. S-80728AL-AR-X, S-80728AN/AN-DR-X
S-80728SL-AR-X, S-80728SN-DR-X (Detection voltage : 2.732 to 2.868 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
2.732
-VDET
×0.02
2.800
-VDET
×0.05
1.0
2.868
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
1.60
0.36
3.70
0.62
Pch (CMOS
output)
VDD = 4.8 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.35
mV/°C
∆-VDET
∆Ta
17. S-80729AL/AL-AS-X, S-80729AN-DS-X (Detection voltage : 2.830 to 2.970 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
2.830
-VDET
×0.02
2.900
-VDET
×0.05
1.0
2.970
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
1.60
0.36
3.70
0.62
Pch (CMOS
output)
VDD = 4.8 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.36
mV/°C
∆-VDET
∆Ta
18. S-80730AL/AL-AT-X, S-80730AN/AN-DT-X
S-80730SL-AT-X, S-80730SN-DT-X (Detection voltage : 2.928 to 3.072 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
2.928
-VDET
×0.02
3.000
-VDET
×0.05
1.0
3.072
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
1.60
0.36
3.70
0.62
Pch (CMOS
output)
VDD = 4.8 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.38
mV/°C
∆-VDET
∆Ta
12
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
19. S-80731AL/AL-AV-X, S-80731AN/AN-DV-X (Detection voltage : 3.025 to 3.175 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
3.025
-VDET
×0.02
3.100
-VDET
×0.05
1.0
3.175
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
1.60
0.36
3.70
0.62
Pch (CMOS
output)
VDD = 4.8 V
4
VDS = 0.5 V
∆-VDET
∆Ta
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.39
mV/°C
20. S-80731AH/AH-BV-X (Detection voltage : 3.025 to 3.175 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
3.025
-VDET
×0.02
3.100
-VDET
×0.05
1.0
3.175
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
4
1.0
0.03
15.0
Pch
V
VDD = 1.2 V
0.09
DS = 0.5 V
VDD = 2.4 V
0.15
4.06
0.30
8.36
Nch
VDD = 4.8 V
3
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.39
mV/°C
∆-VDET
∆Ta
21. S-80732AL/AL-AW-X, S-80732AN/AN-DW-X, S-80732SL-AW-X (Detection voltage : 3.123 to 3.277 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
3.123
-VDET
×0.02
3.200
-VDET
×0.05
1.0
3.277
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
1.60
0.36
3.70
0.62
Pch (CMOS
output)
VDD = 4.8 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.40
mV/°C
∆-VDET
∆Ta
Seiko Instruments Inc.
13
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
22. S-80733AL/AL-AX-X, S-80733AN/AN-DX-X
S-80733SL-AX-X, S-80733SN-DX-X (Detection voltage : 3.220 to 3.380 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
3.220
-VDET
×0.02
3.300
-VDET
×0.05
1.0
3.380
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
1.60
0.36
3.70
0.62
Pch (CMOS
output)
VDD = 4.8 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
Ta=-30°C to 80°C
±0.41
mV/°C
23. S-80733AH (Detection voltage : 3.220 to 3.380 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
3.220
-VDET
×0.02
3.300
-VDET
×0.05
1.0
3.380
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
4
1.0
0.03
15.0
Pch
V
VDD = 1.2 V
0.09
DS = 0.5 V
VDD = 2.4 V
0.15
4.06
0.30
8.36
Nch
VDD = 4.8 V
3
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.41
mV/°C
∆-VDET
∆Ta
24. S-80734AL/AL-AY-X, S-80734AN/AN-DY-X (Detection voltage : 3.318 to 3.482 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
3.318
-VDET
×0.02
3.400
-VDET
×0.05
1.0
3.482
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
1.60
0.36
3.70
0.62
Pch (CMOS
output)
VDD = 4.8 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.43
mV/°C
∆-VDET
∆Ta
14
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
25. S-80735AL/AL-AZ-X, S-80735AN/AN-DZ-X
S-80735SL-AZ-X, S-80735SN-DZ-X (Detection voltage : 3.416 to 3.584 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
3.416
-VDET
×0.02
3.500
-VDET
×0.05
1.0
3.584
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
1.60
0.36
3.70
0.62
Pch (CMOS
output)
VDD = 4.8 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
Ta=-30°C to 80°C
±0.44
mV/°C
26. S-80736AL-A0-X, S-80736AN/AN-D0-X (Detection voltage : 3.513 to 3.687 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
3.513
-VDET
×0.02
3.600
-VDET
×0.05
1.0
3.687
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 4.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
1.60
0.36
3.70
0.62
Pch (CMOS
output)
VDD = 4.8 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.45
mV/°C
∆-VDET
∆Ta
27. S-80737AL/AL-A1-X, S-80737AN/AN-D1-X (Detection voltage : 3.611 to 3.789 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
3.611
-VDET
×0.02
3.700
-VDET
×0.05
1.0
3.789
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
1.60
0.36
3.70
0.62
Pch (CMOS
output)
VDD = 4.8 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.46
mV/°C
∆-VDET
∆Ta
Seiko Instruments Inc.
15
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
28. S-80738AL/AL-A2-X, S-80738AN/AN-D2-X (Detection voltage : 3.708 to 3.892 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
3.708
-VDET
×0.02
3.800
-VDET
×0.05
1.0
3.892
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
1.60
0.36
3.70
0.62
Pch (CMOS
output)
VDD = 4.8 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.48
mV/°C
∆-VDET
∆Ta
29. S-80739AL/AL-A3-X, S-80739AN/AN-D3-X (Detection voltage : 3.806 to 3.994 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
3.806
-VDET
×0.02
3.900
-VDET
×0.05
1.0
3.994
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
1.60
0.36
3.70
0.62
Pch (CMOS
output)
VDD = 4.8 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.49
mV/°C
∆-VDET
∆Ta
30. S-80740AL/AL-A4-X, S-80740AN/AN-D4-X
S-80740SL-A4-X, S-80740SN-D4-X (Detection voltage : 3.904 to 4.096 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
3.904
-VDET
×0.02
4.00
-VDET
×0.05
1.0
4.096
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
VDD = 3.6 V
1.60
3.18
0.46
3.70
7.00
0.75
Pch (CMOS
output)
VDD = 6.0 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.5
mV/°C
∆-VDET
∆Ta
16
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
31. S-80740AH/AH-B4-X (Detection voltage : 3.904 to 4.096 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
3.904
-VDET
×0.02
4.000
-VDET
×0.05
1.0
4.096
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
4
1.0
0.03
15.0
Pch
V
VDD = 1.2 V
0.09
DS = 0.5 V
VDD = 2.4 V
0.15
4.73
0.30
9.60
Nch
VDD = 6.0 V
3
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.5
mV/°C
∆-VDET
∆Ta
32. S-80741AL/AL-A5-X, S-80741AN/AN-D5-X (Detection voltage : 4.001 to 4.199 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
4.001
-VDET
×0.02
4.100
-VDET
×0.05
1.0
4.199
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
VDD = 3.6 V
1.60
3.18
0.46
3.70
7.00
0.75
Pch (CMOS
output)
VDD = 6.0 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.51
mV/°C
∆-VDET
∆Ta
33. S-80742AL/AL-A6-X, S-80742AN/AN-D6-X
S-80742SL-A6-X, S-80742SN-D6-X (Detection voltage : 4.099 to 4.301 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
4.099
-VDET
×0.02
4.200
-VDET
×0.05
1.0
4.301
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
VDD = 3.6 V
1.60
3.18
0.46
3.70
7.00
0.75
Pch (CMOS
output)
VDD = 6.0 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.53
mV/°C
∆-VDET
∆Ta
Seiko Instruments Inc.
17
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
34. S-80743AL/AL-A7-X, S-80743AN/AN-D7-X (Detection voltage : 4.196 to 4.404 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
4.196
-VDET
×0.02
4.300
-VDET
×0.05
1.0
4.404
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
VDD = 3.6 V
1.60
3.18
0.46
3.70
7.00
0.75
Pch (CMOS
output)
VDD = 6.0 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
Ta=-30°C to 80°C
±0.54
mV/°C
35. S-80744AL/AL-A8-X, S-80744AN/AN-D8-X, S-80744SN-D8-X (Detection voltage : 4.294 to 4.506 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
4.294
-VDET
×0.02
4.400
-VDET
×0.05
1.0
4.506
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
VDD = 3.6 V
1.60
3.18
0.46
3.70
7.00
0.75
Pch (CMOS
output)
VDD = 6.0 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.55
mV/°C
∆-VDET
∆Ta
36. S-80744HL/HL-U8-X (Detection voltage : 4.295 to 4.605 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Release voltage
Current consumption
Operating voltage
Output current
-VDET
+VDET
ISS
VDD
IOUT
4.295
4.450
4.605
4.70
6.0
V
V
µA
V
1
1
2
1
3
VDD = 6.0 V
2.6
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
3.70
mA
DS = 0.5 V
VDD = 2.4 V
1.60
0.36
Pch
V
VDD = 4.8 V
0.62
4
DS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.56
mV/°C
∆-VDET
∆Ta
18
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
37. S-80745AL/AL-A9-X, S-80745AN/AN-D9-X
S-80745SL-A9-X, S-80745SN-D9-X (Detection voltage : 4.392 to 4.608 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
4.392
-VDET
×0.02
4.50
-VDET
×0.05
1.0
4.608
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
VDD = 3.6 V
1.60
3.18
0.46
3.70
7.00
0.75
Pch (CMOS
output)
VDD = 6.0 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
Ta=-30°C to 80°C
±0.56
mV/°C
38. S-80745AH-B9-X (Detection voltage : 4.392 to 4.608 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
4.392
-VDET
×0.02
4.500
-VDET
×0.05
1.0
4.608
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
4
1.0
0.03
15.0
Pch
V
VDD = 1.2 V
0.09
DS = 0.5 V
VDD = 2.4 V
0.15
4.73
0.30
9.60
Nch
VDD = 6.0 V
3
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.56
mV/°C
∆-VDET
∆Ta
39. S-80746AL/AL-EA-X, S-80746AN-JA-X (Detection voltage : 4.489 to 4.711 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
4.489
-VDET
×0.02
4.600
-VDET
×0.05
1.0
4.711
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
VDD = 3.6 V
1.60
3.18
0.46
3.70
7.00
0.75
Pch (CMOS
output)
VDD = 6.0 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.58
mV/°C
∆-VDET
∆Ta
Seiko Instruments Inc.
19
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
40. S-80747AL/AL-EB-X, S-80747AN-JB-X (Detection voltage : 4.587 to 4.813 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
4.587
-VDET
×0.02
4.700
-VDET
×0.05
1.0
4.813
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
VDD = 3.6 V
1.60
3.18
0.46
3.70
7.00
0.75
Pch (CMOS
output)
VDD = 6.0 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.59
mV/°C
∆-VDET
∆Ta
41. S-80748AL-EC-X, S-80748AN/AN-JC-X (Detection voltage : 4.684 to 4.916 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
4.684
-VDET
×0.02
4.800
-VDET
×0.05
1.0
4.916
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
VDD = 3.6 V
1.60
3.18
0.46
3.70
7.00
0.75
Pch (CMOS
output)
VDD = 6.0 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.60
mV/°C
∆-VDET
∆Ta
42. S-80749AL-ED-X, S-80749AN-JD-X (Detection voltage : 4.782 to 5.018 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
4.782
-VDET
×0.02
4.900
-VDET
×0.05
1.0
5.018
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
VDD = 3.6 V
1.60
3.18
0.46
3.70
7.00
0.75
Pch (CMOS
output)
VDD = 6.0 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.61
mV/°C
∆-VDET
∆Ta
20
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
43. S-80750AL-EE-X, S-80750AN/AN-JE-X
S-80750SL-EE-X, S-80750SN-JE-X (Detection voltage : 4.880 to 5.120 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
4.880
-VDET
×0.02
5.000
-VDET
×0.05
1.0
5.120
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
VDD = 3.6 V
1.60
3.18
0.46
3.70
7.00
0.75
Pch (CMOS
output)
VDD = 6.0 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
Ta=-30°C to 80°C
±0.63
mV/°C
44. S-80751AL, S-80751AN/AN-JF-X
S-80751SL-EF-X, S-80751SN-JF-X (Detection voltage : 4.977 to 5.223 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
4.977
-VDET
×0.02
5.100
-VDET
×0.05
1.0
5.223
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
VDD = 3.6 V
1.60
3.18
0.46
3.70
7.00
0.75
Pch (CMOS
output)
VDD = 6.0 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.64
mV/°C
∆-VDET
∆Ta
45. S-80752AL-EG-T1, S-80752AN-JE-T1,
S-80752SL-EG-T1 (Detection voltage : 5.075 to 5.325 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
5.075
-VDET
×0.02
5.200
-VDET
×0.05
1.0
5.325
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
VDD = 3.6 V
1.60
3.18
0.46
3.70
7.00
0.75
Pch (CMOS
output)
VDD = 6.0 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.65
mV/°C
∆-VDET
∆Ta
Seiko Instruments Inc.
21
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
46. S-80753AN (Detection voltage : 5.172 to 5.428 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
5.172
-VDET
×0.02
5.300
-VDET
×0.05
1.0
5.428
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
VDD = 3.6 V
1.60
3.18
0.46
3.70
7.00
0.75
Pch (CMOS
output)
VDD = 6.0 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.66
mV/°C
∆-VDET
∆Ta
47. S-80755AL-EK-X (Detection voltage : 5.368 to 5.632 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
5.368
-VDET
×0.02
5.500
-VDET
×0.05
1.0
5.632
-VDET
×0.08
3.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 6.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
VDD = 3.6 V
1.60
3.18
0.46
3.70
7.00
0.75
Pch (CMOS
output)
VDD = 6.0 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.69
mV/°C
∆-VDET
∆Ta
48. S-80761SL-ER-X (Detection voltage : 5.953 to 6.247 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
5.953
-VDET
×0.02
6.100
-VDET
×0.05
1.9
6.247
-VDET
×0.08
3.6
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 7.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
VDD = 3.6 V
VDD = 4.8 V
1.60
3.18
4.13
0.59
3.70
7.00
8.56
0.96
Pch (CMOS
output)
VDD = 8.4 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.78
mV/°C
∆-VDET
∆Ta
22
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
49. S-80763AN-JT-X (Detection voltage : 6.148 to 6.452 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
6.148
-VDET
×0.02
6.300
-VDET
×0.05
1.9
6.452
-VDET
×0.08
3.6
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 7.5 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
VDD = 3.6 V
VDD = 4.8 V
1.60
3.18
4.13
0.59
3.70
7.00
8.56
0.96
Pch (CMOS
output)
VDD = 8.4 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.81
mV/°C
∆-VDET
∆Ta
50. S-80777SN-J8-X (Detection voltage : 7.515 to 7.885 V)
(Unless otherwise specified : Ta=25°C)
Test
circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Detection voltage
Hysteresis width
-VDET
VHYS
7.515
-VDET
×0.02
7.700
-VDET
×0.05
2.2
7.885
-VDET
×0.08
4.0
V
V
1
Current consumption
Operating voltage
Output current
ISS
VDD
IOUT
VDD = 9.0 V
µA
V
mA
2
1
3
1.0
0.23
15.0
Nch
V
VDD = 1.2 V
0.50
DS = 0.5 V
VDD = 2.4 V
VDD = 3.6 V
VDD = 4.8 V
VDD = 6.0 V
1.60
3.18
4.13
4.73
0.65
3.70
7.00
8.56
9.60
1.05
Pch (CMOS
output)
VDD = 9.6 V
4
VDS = 0.5 V
Temperature
characteristic of -
VDET
Ta=-30°C to 80°C
±0.99
mV/°C
∆-VDET
∆Ta
Test Circuits
(2)
(1)
A
VDD
VDD
R(100 kΩ)*
S-807
Series
S-807
VDD
OUT
OUT
VDD
CRT
V
Series
VSS
VSS
* R is unnecessary for CMOS output products.
(4)
(3)
VDD
VDD
V
OUT
V
S-807
S-807
Series
VDD
VDS
VDD
A
A
V
Series
V
OUT
VSS
VSS
VDS
Figure 8
Seiko Instruments Inc.
23
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
Technical Terms
1. Detection voltage (-VDET
)
Detection voltage -VDET is the voltage at which the detector’s output goes active. In products with “Nch open-drain” and
“CMOS active low output” configurations the output goes low on detection. It goes high in products with CMOS active high
output configurations. This detection voltage varies slightly among products of the same type. The variation of voltages
between the specified minimum [(-VDET)min.] and maximum [(-VDET)max.] values is called the detection voltage range. (See
Figure 9.)
Example : For the S-80745AN, detection voltage lies in the range
4.392≤(-VDET)≤4.608.
2. Release voltage (+VDET
)
Release voltage +VDET is the voltage at which a unit’s output returns (is “released”) to its inactive state (high for Nch and
CMOS active low output configurations, and low for CMOS active high output configurations). The value of this voltage for
any single unit lies in a range determined from the value of that unit’s detection voltage (see Figure 10):
(-VDET)×1.02≤(+VDET)≤(-VDET)×1.08.
Example : For an S-80745AN with -VDET=4.608, release voltage lies in the range 4.700≤(+VDET)≤4.997.
For an S-80745AN with -VDET=4.392, release voltage lies in the range 4.480≤(+VDET)≤4.743.
When calculating the overall release voltage range for S-807 Series products, care must be taken to consider the variation in
the series’ detection voltage values. The minimum and maximum values for release voltage [(+VDET)min. and (+VDET)max.)]
must be determined using (-VDET)min. and (-VDET)max.:
(+VDET)min.=[(-VDET)min.]×1.02;
(+VDET)max.=[(-VDET)max.]×1.08.
Example : For S-80745AN voltage detectors, release voltage lies in the range 4.480≤(+VDET)≤4.977.
Note :
Detection voltage(-VDET) and Release voltage(+VDET) range equally from 4.480V to 4.608V, however, (+VDET) >
(-VDET).
VDD
Release voltage
(+VDET)max.
(+VDET)min.
VDD
Detection voltage
(-VDET)max.
(-VDET)min.
Release voltage range
Detection voltage range
OUT
OUT
Figure 9
Figure 10
3. Hysteresis width (VHYS
)
Hysteresis width is the voltage difference between a device’s detection voltage and its release voltage (see Figure 14.
HYS=B-A). By giving a device hysteresis, erroneous toggling of the output due to noise at the input is avoided.
V
4. Through-type current
Through-type current refers to the instantaneous current flow which occurs at the moment a voltage detector output toggles.
This current is quite large in devices with CMOS configured outputs, and also occurs to some extent in Nch open-drain
configured devices. S-807 Series voltage detectors are specially designed to limit through-type currents and are superior to
S-805 Series devices in this respect. (See current consumption characteristics.)
24
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
5. Oscillation
In applications where a resistor is connected to the voltage detector input (Figure 11 and 12), the through-type current
generated when the output goes from low to high (release) causes a voltage drop equal to [through-type current]×[input
resistance] across the resistor. When the input voltage resultantly drops below the detection voltage -VDET, the output
voltage returns to its low level. In this state, the through-type current -- and its resultant voltage drop -- have disappeared,
and the output goes back from low to high. Again, a through-type current is generated, a voltage drop appears, and the
process repeats. Oscillation refers to this unstable condition.
•
Power reset mis-implementation
•
Mis-implementation with input voltage
divider
VDD
VDD
RA
RB
Di
R
(CMOS output)
OUT
(CMOS output)
S-
S-
VIN
VIN
807XXAL
/SL
807XXAL
/SL
OUT
C
VSS
VSS
Figure 12
Figure 11
Seiko Instruments Inc.
25
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
Operation
1. Basic operation
(1) When power supply voltage VDD is greater than the release voltage +VDET, the Nch transistor is OFF and the Pch
transistor ON, causing VDD (high) to appear at the output. With the Nch transistor of Figure 13 (a) off, the comparator
input voltage is (RB+RC)/(RA+RB+RC)×VDD
(2) When power supply voltage VDD goes below +VDET, the output continues to maintain the power supply voltage level, as
long as VDD remains above the detection voltage -VDET When VDD does fall below -VDET (A in Figure 14), the Nch
transistor goes ON, the Pch transistor goes OFF, and VSS appears at the output. With the Nch transistor of Figure 13
(a) ON, the comparator input voltage is RB/(RA+RB)×VDD
.
.
.
(3) When VDD falls below the minimum operating voltage, the output becomes undefined. However, output will revert to VDD
if a pull-up has been employed.
(4)
VSS will again be output when VDD rises above the minimum operating voltage. VSS will continue to be output even when
VDD surpasses -VDET, as long as it does not exceed the release voltage +VDET
.
(5) When VDD rises above +VDET (B in Figure 14), the Nch transistor goes OFF, the Pch transistor goes ON, and VDD
appears at the output.
VDD
(1)
(2)
A
(3)
(4)
(5)
VDD
*
B
Release voltage(+VDET
)
-
Hysteresis
width
(VHYS
Pch
Detection voltage(-VDET
)
RA
RB
)
+
Minimum operating
voltage
VSS
OUT
Comparator
output
Nch
VDD
VREF
(a)
OUT
RC
VSS
VSS
* Parasitic diode
Figure 13
Figure 14
26
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
2. Reference voltage circuit
The S-807 Series has 0.8 V typical reference voltage circuit as-
VREF (a high-stable reference voltage source) .
It features:
• Low power consumption
• Good temperature characteristic
VDD
3. Comparator
The comparator drives a differential amplifier with a current
consumption of only 0.5µA as shown in Figure 15.
It features:
VOUT
+
-
VIN
VIN
• Good matching characteristics
• Wide operating voltage range
• Low offset voltage
Bias
VSS
Figure 15 Comparator
4. Other characteristics
(1) Temperature characteristic of detection voltage
Because of the excellent temperature characteristic of the reference voltage circuit, the temperature characteristics of
the detection voltage are expressed by the following formula in the range of -30°C to +80°C.
-VDET
× (±0.1) mV/°C typ.
-VREF
*-VREF is 0.65 V min., 0.8 V typ., 0.95 V max.
(2) Temperature characteristic of release voltage
-VDET+VHYS
× (±0.1) mV/°C
-VREF
Seiko Instruments Inc.
27
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
Dimensions
(1) TO-92
(2) SOT-89-3
5.2 max.
4.2 max.
4.5±0.2
1.6±0.2
1.5±0.2
5.0±0.2
Mark side
+0.25
-0.35
2.5±0.2
4.0
2.3 max.
0.6 max.
0.8 min.
0.4±0.1
0.45±0.1
1.5±0.1
0.8 max.
12.7 min.
0.4±0.1
1.5±0.1
0.4±0.05
0.45±0.1
0.45±0.1
1.5±0.1
(0.4)
1.27±0.05 1.27±0.05
2.5
45°
1.5 max.
(0.2)
(0.4)
(3) SOT-23-5
2.9 (3.1 max.)
0.45
+0.2
-0.3
2.8
1.6
+0.1
-0.06
0.16
0.4±0.1
1.1±0.1
1.3 max.
0 min.
0.95±0.1
0.95±0.1
1.9±0.2
Unit : mm
Figure 16 Dimensions
28
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
Taping
1. SOT-89-3
1.1 Tape specifications
T1 and T2 types are available depending upon the direction of ICs on the tape.
(1) White label (without a hole in the center of embossed area)
+0.1
-0
4.0±0.1(10 pitches : 40.0±0.2)
φ1.5
2.0±0.05
3°max.
0.3±0.05
8.0±0.1
5°max.
2.0±0.1
4.75±0.1
(2) Blue label (with a hole in the center of embossed area)
+0.1
-0
4.0±0.1(10 pitches : 40.0±0.2)
φ1.5
2.0±0.05
+0.1
-0
φ1.5
3°max.
0.3±0.05
8.0±0.1
5°max.
2.0±0.1
4.75±0.1
Unit : mm
T1
T2
Feed direction
Feed direction
Figure 17
Seiko Instruments Inc.
29
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
1.2 Reel specifications
1 reel holds 1000 detectors.
16.5 Max.
Most outer dimension.
2±0.2
10.5±0.4
(1.5)
φ13±0.2
+1
φ60
0
(60°)
(60°)
13.0 0.3
±
+0
φ180
Inner dimension of reel core.
−3
15.4±1.0
Outer dimension of reel core.
Unit : mm
Figure 18
2. SOT-23-5
2.1 Tape specifications
T1 and T2 types are available depending upon the direction of ICs on the tape.
The top cover tape comes in two tones; opaque, transparent and transparent.
4.0±0.1(10 pitches : 40.0±0.2)
1.75±0.1
+0.1
-0
+0.2
-0
φ1.5
φ1.0
2.0±0.05
3.5±0.05
8.0±0.2
3°max.
4.0±0.1
0.27±0.05
3°max.
1.4±0.1
3.2±0.1
Unit : mm
T1
T2
→Feed direction
→Feed direction
Figure 19
30
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
2.2. Reel specifications
1 reel holds 3000 detectors.
12.5 Max.
Most outer dimension.
2±0.2
10.5±0.4
(1.5)
φ13±0.2
+1
φ60
0
(60°)
(60°)
9.0 0.3
±
+0
φ180
Inner dimension of reel core.
−3
11.4±1.0
Outer dimension of reel core.
Unit : mm
Figure 20
Magazine Dimensions
1 stick holds 25 detectors.
5±0.1
178.2±0.1
34.8
35
35
35
38.4
Part B
Counting mark (every five units)
Part A
3.35±0.07 3.5±0.07 3.5±0.07
3.5±0.07 3.5±0.07 3.35±0.07
0.5
1.45±0.1
0.5
2.8
2.5
2.8
3.25±0.1
4.1±0.07
10.0±0.1
1.9 1.6
2.7±0.07
0.5
0.5
2.6±0.1
1.45±0.1
2.8
3.15
3.85±0.07
2.8
“Part A”magnified
“Part B”magnified
Unit : mm
Figure 21
Seiko Instruments Inc.
31
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
Markings
1. TO-92
S
4
8
0
0
7
1
A
N
9
A
1
1
3
2
Product name
Last digit of the year
Lot No.
2. SOT-89-3
(2) Blue label
(1) White label
Factory code
1
2
1
2
Product name (abbreviation)
Lot No.
Product name (abbreviation)
Lot No.
3. SOT-23-5
&
&
Product name (abbreviation)
Lot No.
: Alphabet
: Dot on one side
Figure 22
32
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
Characteristics
1. Detection voltage (VDET) - Temperature (Ta)
1.1 S-80730AL
1.2 S-80740AH
3.2
4.2
Release voltage
Release voltage
4.1
3.1
VDET
VDET
(V)
(V)
3.0
4.0
3.9
Detection voltage
Detection voltage
2.9
-20
0
20 40 60 80
-20
0
20 40 60 80
Ta (°C)
Ta (°C)
2. Current consumption (ISS) - Input voltage (VIN)
2.1 S-80730AL
2.2 S-80740AH
75.0
5.0
140
5.0
4.0
4.0
ISS
ISS
(µA)
(µA)
3.0
3.0
2.0
1.0
2.0
1.0
0
0
2.0 6.0 10.0 14.0 18.0
2.0 6.0 10.0 14.0 18.0
VIN (V)
VIN (V)
3. Current consumption (ISS) - Temperature (Ta)
3.1 S-80730AL
VDD=4.5 V
3.2 S-80740AH
VDD=6.0 V
1.6
1.6
1.2
ISS
(µA)
ISS
(µA)
1.2
0.8
0.8
0.4
0.4
-20
0
20
40
60
80
-20
0
20
40
60
80
Ta (°C )
Ta (°C )
Seiko Instruments Inc.
33
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
4. Output transistor current (IOUT
)
4.1 Nch transistor current
(i) VDS-IOUT
(ii) VDD-IOUT
8.0
6.4
Ta=-30°C
Ta=25°C
Ta=80°C
40
32
VDD=4.8 V
VDD=3.6 V
IOUT
(mA)
4.8
3.2
1.6
IOUT
24
(mA)
16
VDD=2.4 V
VDD=1.2 V
1.0 2.0
8
0
VDS=0.5 V
0
1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
VDD (V)
3.0
VDS (V)
4.0
5.0
4.2 Pch transistor current
VDS-IOUT
4.0
3.2
VDD=4.8 V
IOUT
2.4
(mA)
1.6
VDD=3.6 V
0.8
0
VDD=2.4 V
VDD=1.2 V
1.0 2.0
3.0
VDS (V)
4.0
5.0
5. Minimum operating voltage
5.1 CMOS active low output
5.2 CMOS active high output
4.0
3.2
5.0
4.0
2.4
1.6
0.8
0
VOUT
(V)
3.0
2.0
1.0
0
VOUT
(V)
0.8 1.6 2.4 3.2 4.0
VDD (V)
1.0 2.0 3.0 4.0 5.0
VDD (V)
34
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
6. Dynamic response
6.1 Nch open-drain output products
102
RL=100 kΩ
101
Delay time
(ms)
“L” → “H”
100
10-1
10-2
“H” → “L”
10-4
10-3
10-2
10-1
Load capacitance (µF)
6.2 CMOS active low output products
100
10-1
Delay time
(ms)
“H” → “L”
10-2
10-3
“L” → “H”
10-4
10-3
10-2
10-1
Load capacitance (µF)
6.3 CMOS active high output products
101
100
Delay time
(ms)
“L” → “H”
10-1
10-2
10-3
“H” → “L”
10-4
10-3
10-2
10-1
Load capacitance (µF)
Seiko Instruments Inc.
35
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
Measuring Circuits
(1) Detection voltage
(2) Current consumption
A
VDD
VDD
*R(100 kΩ)
VDD
S-807
Series
VDD
S-807
Series
OUT
Oscilloscope
V
V
OUT
VSS
VSS
* R is unnecessary for CMOS output products.
(3) Output transistor current
(a) Nch transistor current
VDD
(b) Pch transistor current
VDD
VDS
V
OUT
V
VDD
S-807
Series
S-807
Series
VDD
A
A
V
V
OUT
VSS
VSS
VDS
(4) Min. operating voltage
VDD
S-807
(Nch output)
Series
*R (100 kΩ)
VDD
OUT
V
* R is unnecessary for CMOS output products.
VSS
V
(5) Dynamic response
(b) CMOS output products
(a) Nch open-drain output products
VDD
VDD
Input pulse
5 V
100 kΩ
OUT
OUT
S-807
Series
CRT
7 V
S-807
Series
CRT
CL
1 V
VSS
CL
P.G
P.G
VSS
VSS
Figure 23
36
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
Application Circuit Examples
1. Reset circuits of microcomputers
If the power supply voltage to a microcomputer falls below the specified level, unspecified operation may be performed or the
contents of the memory register may be lost. When power supply voltage returns to normal, the microcomputer may need to
be initialized before normal operations can be done.
Reset circuits protect microcomputers, in the event of current being momentarily switched off or lowered.
With the S-807 Series, the reset circuits shown in Figures 24 to 26 can be easily constructed.
VDD1
VDD2
VDD
Micro-
S-807XX
AN/SN
computer
Micro-
S-807XX
AL/SL
computer
VSS
VSS
(Nch open-drain output products only)
Figure 24
Figure 25
VDD
S-807XX
AN/SN
Micro-
computer
VSS
Figure 26
Seiko Instruments Inc.
37
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
2. Power-on reset circuit
The Nch open-drain output products of the S-807 Series can be used to construct a power-on reset circuit. Following is an
example.
VDD
Di
R
VIN
(R≤7.5kΩ)
S-807XX
AN/SN
OUT
+
-
(Nch open-drain products)
C
VSS
Note 1: R should be 7.5kΩ or less for purpose of protection against oscillation.
Note 2: “Di” momentarily discharges the charge received via “C” at the falling edge of power off. There
is no need to insert a diode, when there is no conflict with application circuit even if there is a
delay in the falling edge of OUT at the falling edge of power off.
OUT
(V)
VDD
(V)
t (s)
t (s)
Figure 27
Note 3: When there is a sharp rise in power, the output voltage may go “H” momentarily in unstable range of
the output voltage (the output voltage is unstable below the minimum operating voltage) .
VDD
(V)
OUT
(V)
t (s)
t (s)
Figure 28
38
Seiko Instruments Inc.
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
3. Change of detection voltage
In Nch open-drain output products of the S-807 Series, detection voltage can be changed with resistance dividers or diodes
as shown in Figures 29 and 30. In Figure 29, hysteresis width is also changed.
VDD
VDD
Vf1
Vf2
RA
S-
807XX
AN/SN
S-
807XX
AN/SN
(RA≤7.5kΩ) VIN
VIN
OUT
OUT
+
(Nch open-drain
products)
(Nch open-drain
products)
RB
-
VS
VSS
RA+RB
RB
Detection voltage=
Hysteresis width=
•-VDET
•-VHYS
Detection voltage=Vf1+Vf2+-VDET
RA+RB
RB
Figure 30
Note 1: The hysteresis width will be a little
wider than the value of the formula
above, because of the through current,
if RA and RB are larger.
Note 2: RA should be 7.5kΩ or less for
purpose of protection against
oscillation.
Figure 29
Notes
• In CMOS output products of S-807 Series, high through current flows when detecting or releasing. If a high impedance is
connected to the input, oscillation may be caused by the through current when lowering the voltage during releasing.
• In TO-92 products, since there are projections and resin burrs on the roots of the lead terminals formed at the Tiebar-cut, do
not solder to them.
• When designing for mass production using an application circuit described here, take into account the deviation of
components and temperature characteristics.
• Seiko Instruments Inc. cannot take any responsibility for the patents on the circuits described here.
Seiko Instruments Inc.
39
Collection of Product FAQs
Author: Hamaguchi Masanao
Date: 98/11/12 (Thursday) 10:17 (Modified: 98/12/14 (Monday) 16:42)
<Information level>
A:
Public (Printing O.K.)
B: Technical
Index:
<Product>
Division name: 01 IC
Category 1:
11 Power Supply
Category 2:
Cal No.:
1. Voltage Detectors
S-807
Related Documents:
Question:
What is the method for calculating delay-time of the power-on clear circuit?
Answer:
The delay time (power-on clear time) produced in a power-on clear circuit using the S-807xxAN can be
found by substituting constants in the following formula:
Vdet +
Tdelay = 1×C×R×Ln(1 -
)
Vdd
Tdelay: Delay time [sec]
C: External capacitance value [F]
R: Resistance value [Ω]
V det+: S-807xxAN Series release voltage [V]
Vdd: Supply voltage [V]
Vdd
V
Supply voltage (Vdd)
R
Pull-up resistor
S-807xxAN release voltage (Vdet+)
S-807 input voltage
S-807xxAN
C
Delay time
Note: Set R to less than 7.5 kΩ to prevent oscillation.
40
<Remarks>
FAQ No.: 11S807001
41
相关型号：
©2020 ICPDF网 联系我们和版权申明