S-8211EAA-I6T1U [SII]
BATTERY PROTECTION IC;
| 型号： | S-8211EAA-I6T1U |
| 厂家： | 
SEIKO INSTRUMENTS INC |
| 描述： | BATTERY PROTECTION IC |
| 文件： | 总29页 (文件大小：1551K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S-8211E Series
BATTERY PROTECTION IC
FOR 1-CELL PACK
www.sii-ic.com
© SII Semiconductor Corporation, 2009-2015
Rev.2.4_02
The S-8211E Series has high-accuracy voltage detections circuit and delay circuits.
The S-8211E Series is suitable for monitoring overcharge and overdischarge of 1-cell lithium ion / lithium polymer
rechargeable battery pack.
Features
(1) High-accuracy voltage detection circuit
• Overcharge detection voltage
3.6 V to 4.5 V (5 mV step)
Accuracy 25 mV (+25°C)
Accuracy 30 mV (−5°C to +55°C)
Accuracy 50 mV
Accuracy 50 mV
Accuracy 100 mV
• Overcharge release voltage
• Overdischarge detection voltage
• Overdischarge release voltage
3.5 V to 4.4 V*1
2.0 V to 3.0 V (10 mV step)
2.0 V to 3.4 V*2
(2) Detection delay times are generated by an internal circuit
(external capacitors are unnecessary)
Accuracy 20%
(3) Wide operating temperature range
(4) Low current consumption
• During operation
• During overdischarge
(5) Output logic of CO pin is selectable.
(6) Lead-free, Sn 100%, halogen-free*3
−40°C to +85°C
3.0 μA typ., 5.5 μA max. (+25°C)
2.0 μA typ., 3.5 μA max. (+25°C)
Active “H”, Active “L”
*1. Overcharge release voltage = Overcharge detection voltage − Overcharge hysteresis voltage
(Overcharge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.4 V in 50 mV step.)
*2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage
(Overdischarge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.7 V in 100 mV step.)
*3. Refer to “ Product Name Structure” for details.
Applications
• Lithium-ion rechargeable battery pack
• Lithium-polymer rechargeable battery pack
Packages
• SOT-23-5
• SNT-6A
1
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
Block Diagram
VDD
Output control circuit
＋
－
Divider control
circuit
Oscillator control
circuit
DO
CO
Overcharge
detection
comparator
＋
－
Overdischarge
detection
comparator
VM
VSS
Remark All diodes shown in figure are parasitic diodes.
Figure 1
2
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
Product Name Structure
1. Product Name
S-8211E xx
-
xxxx
U
Environmental code
U: Lead-free (Sn 100%), halogen-free
Package name (abbreviation) and IC packing specifications*1
M5T1: SOT-23-5, Tape
I6T1: SNT-6A, Tape
Serial code*2
Sequentially set from AA to ZZ
*1. Refer to the tape drawing.
*2. Refer to “3. Product Name List”.
2. Packages
Drawing Code
Package Name
Package
Tape
Reel
Land
SOT-23-5
SNT-6A
MP005-A-P-SD
PG006-A-P-SD
MP005-A-C-SD
PG006-A-C-SD
MP005-A-R-SD
PG006-A-R-SD
−
PG006-A-L-SD
3
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
3. Product Name List
3. 1 SOT-23-5
Table 1
Overcharge Overcharge Overdischarge Overdischarge
Detection
Voltage
Release
Voltage
Detection
Voltage
Release
Voltage
Delay Time
Combination*1
CO Pin
Output Form
Product Name
[VCU
]
[VCL
]
[VDL
]
[VDU]
S-8211EAC-M5T1U
S-8211EAF-M5T1U
S-8211EAG-M5T1U
S-8211EAJ-M5T1U
S-8211EAK-M5T1U
3.600 V
3.650 V
3.800 V
4.180 V
3.600 V
3.600 V
3.550 V
3.600 V
4.180 V
3.600 V
2.00 V
2.00 V
2.00 V
2.50 V
2.00 V
2.00 V
2.30 V
2.30 V
3.00 V
2.30 V
(1)
(2)
(2)
(1)
(1)
CMOS output active “L”
CMOS output active “L”
CMOS output active “L”
CMOS output active “H”
CMOS output active “H”
*1. Refer to the Table 3 about the details of the delay time combinations (1), (2).
Remark Please contact our sales office for the products with detection voltage value other than those specified above.
3. 2 SNT-6A
Table 2
Overcharge Overcharge Overdischarge Overdischarge
Detection
Voltage
Release
Voltage
Detection
Voltage
Release
Voltage
Delay Time
Combination*1
CO Pin
Output Form
Product Name
[VCU
]
[VCL
]
[VDL
]
[VDU]
S-8211EAA-I6T1U
S-8211EAB-I6T1U
S-8211EAD-I6T1U
S-8211EAE-I6T1U
S-8211EAH-I6T1U
S-8211EAI-I6T1U
S-8211EAP-I6T1U
4.220 V
4.270 V
4.220 V
4.220 V
4.000 V
3.800 V
4.280 V
4.220 V
4.270 V
4.220 V
4.220 V
3.800 V
3.700 V
4.080 V
2.00 V
2.00 V
2.50 V
2.30 V
3.00 V
2.30 V
2.50 V
2.00 V
2.00 V
2.50 V
2.30 V
3.20 V
2.40 V
2.50 V
(2)
(2)
(2)
(2)
(1)
(1)
(1)
CMOS output active “L”
CMOS output active “L”
CMOS output active “L”
CMOS output active “L”
CMOS output active “L”
CMOS output active “L”
CMOS output active “L”
*1. Refer to the Table 3 about the details of the delay time combinations (1), (2).
Remark Please contact our sales office for the products with detection voltage value other than those specified above.
Table 3
Overcharge Detection Delay Time
[tCU
Overdischarge Detection Delay Time
[tDL]
Delay Time
Combination
]
(1)
(2)
1.2 s
150 ms
300 ms
573 ms
Remark The delay times can be changed within the range listed Table 4. For details, please contact our sales office.
Table 4
Delay Time
Symbol
tCU
Selection Range
Remark
Overcharge detection delay time
Overdischarge detection delay time
143 ms
38 ms
573 ms
150 ms
1.2 s
Select a value from the left.
Select a value from the left.
tDL
300 ms
Remark The value surrounded by bold lines is the delay time of the standard products.
4
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
Pin Configurations
1. SOT-23-5
Table 5
SOT-23-5
Top view
Pin No.
Symbol
VM
Description
1
2
3
Negative power supply input pin for CO pin
Input pin for positive power supply
Input pin for negative power supply
Output pin for overdischarge detection
(CMOS output)
5
1
4
VDD
VSS
4
5
DO
CO
Output pin for overcharge detection
(CMOS output)
2
3
Figure 2
2. SNT-6A
SNT-6A
Table 6
Top view
Pin No.
1
Symbol
NC*1
Description
No connection
1
2
3
6
5
4
Output pin for overcharge detection
(CMOS output)
2
3
CO
Output pin for overdischarge detection
(CMOS output)
DO
4
5
6
VSS
VDD
VM
Input pin for negative power supply
Input pin for positive power supply
Negative power supply input pin for CO pin
Figure 3
*1. The NC pin is electrically open.
The NC pin can be connected to VDD pin or VSS pin.
5
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
Absolute Maximum Ratings
Table 7
(Ta = +25°C unless otherwise specified)
Item
Symbol
VDS
Applied pin
VDD
Absolute Maximum Ratings
Unit
Input voltage between VDD pin and
VSS pin
VSS − 0.3 to VSS + 12
V
VM pin input voltage
VVM
VDO
VCO
VM
DO
CO
−
−
−
VDD − 28 to VDD + 0.3
VSS − 0.3 to VDD + 0.3
VVM − 0.3 to VDD + 0.3
600*1
V
V
DO pin output voltage
CO pin output voltage
V
SOT-23-5
Power dissipation
SNT-6A
mW
mW
°C
°C
PD
400*1
Operating ambient temperature
Storage temperature
Topr
Tstg
−40 to +85
−
−55 to +125
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Board name: JEDEC STANDARD51-7
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
700
600
SOT-23-5
500
SNT-6A
400
300
200
100
0
100
Ambient Temperature (Ta) [°C]
Figure 4 Power Dissipation of Package (When Mounted on Board)
150
50
0
6
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
Electrical Characteristics
1. Except Detection Delay Time (+25°C)
Table 8
(Ta = +25°C unless otherwise specified)
Test
Condi-
tion
Test
Circuit
Item
Symbol
Condition
Min.
Typ.
Max. Unit
DETECTION VOLTAGE
VCU
VCU
VCL
VCL
VDL
VDU
VDU
VCU
0.025
VCU
0.025
3.60 V to 4.50 V, Adjustable
3.60 V to 4.50 V, Adjustable,
V
1
1
1
1
2
2
2
1
1
1
1
2
2
2
−
+
VCU
Overcharge detection voltage
VCU
VCU
V
V
V
V
V
V
Ta =
−
5°
C to
+
55
°
C*1
−0.03
+0.03
VCL
VCL
VCL
≠ VCU
−0.05
+0.05
3.50 V to 4.40 V,
Adjustable
VCL
VDL
VDU
Overcharge release voltage
Overdischarge detection voltage
Overdischarge release voltage
VCL
VCL
0.025
VCL = VCU
−0.05
+
VDL
VDL
2.00 V to 3.00 V, Adjustable
−0.05
+0.05
VDU
VDU
VDU
≠ VDL
−0.10
+0.10
2.00 V to 3.40 V,
Adjustable
VDU
VDU
VDU = VDL
−0.05
+0.05
INPUT VOLTAGE
−
VDSOP1
1.5
−
8
V
−
−
Operating voltage between VDD pin and VSS pin
INPUT CURRENT
IOPE
VDD = 3.5 V, VVM = 0 V
VDD = 1.5 V, VVM = 0 V
1.0
0.3
μ
μ
A
A
Current consumption during operation
Current consumption during overdischarge
OUTPUT RESISTANCE
3.0
2.0
5.5
3.5
3
3
2
2
IOPED
−
RCOH
RCOL
2.5
2.5
2.5
2.5
2.5
5
9
5
5
5
10
15
10
10
10
k
k
k
k
k
Ω
Ω
Ω
Ω
Ω
CO pin resistance “H”
4
4
4
5
5
3
3
3
3
3
CO pin output logic active “H”
CO pin resistance “L”
CO pin output logic active “L”
−
−
RDOH
RDOL
DO pin resistance “H”
DO pin resistance “L”
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
7
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
2. Except Detection Delay Time (−40°C to +85°C *1)
Table 9
(Ta = −40°C to +85°C *1 unless otherwise specified)
Test
Condi-
tion
Test
Circuit
Item
Symbol
Condition
Min.
Typ.
Max. Unit
DETECTION VOLTAGE
VCU
VCL
VCL
VDL
VDU
VDU
VCU
0.060
VCU
0.040
Overcharge detection voltage
VCU
VCL
VDL
VDU
3.60 V to 4.50 V, Adjustable
V
1
1
1
2
2
2
1
1
1
2
2
2
−
+
+
VCL
0.08
VCL
0.065
VCL
≠ VCU
V
−
3.50 V to 4.40 V,
Adjustable
Overcharge release voltage
Overdischarge detection voltage
Overdischarge release voltage
VCL
0.08
VCL
0.04
VCL = VCU
V
−
+
VDL
0.11
VDL
0.13
V
V
V
2.00 V to 3.00 V, Adjustable
−
−
−
+
VDU
0.15
VDU
0.19
VDU
≠ VDL
+
+
2.00 V to 3.40 V,
Adjustable
VDU
0.11
VDU
0.13
VDU = VDL
INPUT VOLTAGE
−
VDSOP1
V
−
−
Operating voltage between VDD pin and VSS pin
INPUT CURRENT
1.5
−
8
IOPE
VDD = 3.5 V, VVM = 0 V
VDD = 1.5 V, VVM = 0 V
μ
A
A
Current consumption during operation
Current consumption during overdischarge
OUTPUT RESISTANCE
0.7
0.2
3.0
2.0
6.0
3.8
3
3
2
2
IOPED
μ
−
RCOH
RCOL
k
k
k
k
k
Ω
Ω
Ω
Ω
Ω
CO pin resistance “H”
1.2
1.2
1.2
1.2
1.2
5
9
5
5
5
15
27
15
15
15
4
4
4
5
5
3
3
3
3
3
CO pin output logic active “H”
CO pin resistance “L”
CO pin output logic active “L”
−
−
RDOH
RDOL
DO pin resistance “H”
DO pin resistance “L”
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
8
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
3. Detection Delay Time
3. 1 S-8211EAC, S-8211EAH, S-8211EAI, S-8211EAJ, S-8211EAK, S-8211EAP
Table 10
Test
Condi-
tion
Test
Circuit
Item
Symbol
Condition
Min.
Typ.
Max. Unit
DELAY TIME (Ta =
+
25°C)
tCU
tDL
−
−
0.96
120
1.2
1.4
s
6
6
4
4
Overcharge detection delay time
150
180
ms
Overdischarge detection delay time
DELAY TIME (Ta = −40°C to +
85°C) *1
tCU
tDL
−
−
0.7
83
1.2
2.0
s
6
6
4
4
Overcharge detection delay time
Overdischarge detection delay time
150
255
ms
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
3. 2 S-8211EAA, S-8211EAB, S-8211EAD, S-8211EAE, S-8211EAF, S-8211EAG
Table 11
Test
Test
Condi-
tion
Item
Symbol
Condition
Min.
Typ.
Max. Unit
Circuit
DELAY TIME (Ta =
+
25°C)
ms
6
6
4
4
Overcharge detection delay time
tCU
tDL
−
−
458
240
573
300
687
ms
Overdischarge detection delay time
360
DELAY TIME (Ta = −40°C to +
85°C) *1
ms
ms
6
6
4
4
Overcharge detection delay time
Overdischarge detection delay time
tCU
tDL
−
−
334
166
573
300
955
510
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
9
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
Test Circuits
Caution Unless otherwise specified, the output voltage levels “H” and “L” at CO pin (VCO) are judged by VVM
+
1.0 V, and the output voltage levels “H” and “L” at DO pin (VDO) are judged by VSS + 1.0 V. Judge the
CO pin level with respect to VVM and the DO pin level with respect to VSS
.
1. Overcharge Detection Voltage, Overcharge Release Voltage
(Test Condition 1, Test Circuit 1)
1. 1 CO pin output logic = Active “H”
Overcharge detection voltage (VCU) is defined as the voltage between the VDD pin and VSS pin at which VCO
goes from “L” to “H” when the voltage V1 is gradually increased from the starting condition of V1 = 3.5 V.
Overcharge release voltage (VCL) is defined as the voltage between the VDD pin and VSS pin at which VCO goes
from “H” to “L” when the voltage V1 is then gradually decreased. Overcharge hysteresis voltage (VHC) is defined
as the difference between overcharge detection voltage (VCU) and overcharge release voltage (VCL).
1. 2 CO pin output logic = Active “L”
Overcharge detection voltage (VCU) is defined as the voltage between the VDD pin and VSS pin at which VCO
goes from “H” to “L” when the voltage V1 is gradually increased from the starting condition of V1 = 3.5 V.
Overcharge release voltage (VCL) is defined as the voltage between the VDD pin and VSS pin at which VCO goes
from “L” to “H” when the voltage V1 is then gradually decreased. Overcharge hysteresis voltage (VHC) is defined
as the difference between overcharge detection voltage (VCU) and overcharge release voltage (VCL).
2. Overdischarge Detection Voltage, Overdischarge Release Voltage
(Test Condition 2, Test Circuit 2)
Overdischarge detection voltage (VDL) is defined as the voltage between the VDD pin and VSS pin at which VDO goes
from “H” to “L” when the voltage V1 is gradually decreased from the starting condition of V1 = 3.5 V, V2 = 0 V.
Overdischarge release voltage (VDU) is defined as the voltage between the VDD pin and VSS pin at which VDO goes
from “L” to “H” when the voltage V1 is then gradually increased. Overdischarge hysteresis voltage (VHD) is defined as
the difference between overdischarge release voltage (VDU) and overdischarge detection voltage (VDL).
3. Current Consumption during Operation
(Test Condition 3, Test Circuit 2)
The current consumption during operation (IOPE) is the current that flows through the VDD pin (IDD) under the set
conditions of V1 = 3.5 V and V2 = 0 V (normal status).
4. Current Consumption during Overdischarge
(Test Condition 3, Test Circuit 2)
The current consumption during overdischarge (IOPED) is the current that flows through the VDD pin (IDD) under the
set conditions of V1 = 1.5 V, V2 = 0V (overdischarge status).
10
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
5. CO Pin Resistance “H”
(Test Condition 4, Test Circuit 3)
5. 1 CO pin output logic = Active “H”
The CO pin resistance “H” (RCOH) is the resistance at the CO pin under the set conditions of V1 = 4.5 V, V2 =
0 V, V3 = 4.0 V.
5. 2 CO pin output logic = Active “L”
The CO pin resistance “H” (RCOH) is the resistance at the CO pin under the set conditions of V1 = 3.5 V, V2 =
0 V, V3 = 3.0 V.
6. CO Pin Resistance “L”
(Test Condition 4, Test Circuit 3)
6. 1 CO pin output logic = Active “H”
The CO pin resistance “L” (RCOL) is the resistance at the CO pin under the set conditions of V1 = 3.5 V, V2 =
0 V, V3 = 0.5 V.
6. 2 CO pin output logic = Active “L”
The CO pin resistance “L” (RCOL) is the resistance at the CO pin under the set conditions of V1 = 4.5 V, V2 =
0 V, V3 = 0.5 V.
7. DO Pin Resistance “H”
(Test Condition 5, Test Circuit 3)
The DO pin “H” resistance (RDOH) is the resistance at the DO pin under the set conditions of V1 = 3.5 V, V2 =
0 V, V4 = 3.0 V.
8. DO Pin Resistance “L”
(Test Condition 5, Test Circuit 3)
The DO pin “L” resistance (RDOL) is the resistance at the DO pin under the set conditions of V1 = 1.8 V, V2 =
0 V, V4 = 0.5 V.
9. Overcharge Detection Delay Time
(Test Condition 6, Test Circuit 4)
9. 1 CO pin output logic = Active “H”
The overcharge detection delay time (tCU) is the time needed for VCO to change from “L” to “H” just after the
voltage V1 momentarily increases (within 10 μs) from overcharge detection voltage (VCU) −0.2 V to overcharge
detection voltage (VCU) +0.2 V under the set conditions of V2 = 0 V.
9. 2 CO pin output logic = Active “L”
The overcharge detection delay time (tCU) is the time needed for VCO to change from “H” to “L” just after the
voltage V1 momentarily increases (within 10 μs) from overcharge detection voltage (VCU) −0.2 V to overcharge
detection voltage (VCU) +0.2 V under the set conditions of V2 = 0 V.
10. Overdischarge Detection Delay Time
(Test Condition 6, Test Circuit 4)
The overdischarge detection delay time (tDL) is the time needed for VDO to change from “H” to “L” just after the voltage
V1 momentarily decreases (within 10 μs) from overdischarge detection voltage (VDL) +0.2 V to overdischarge
detection voltage (VDL) −0.2 V under the set condition of V2 = 0 V.
11
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
R1 =
220 Ω
VDD
IDD
A
VDD
VSS
V1
V1
S-8211E Series
S-8211E Series
VM
VSS
VM
DO
CO
DO
CO
V2
V VDO
V VCO
V VDO
V VCO
COM
COM
Figure 5 Test Circuit 1
Figure 6 Test Circuit 2
VDD
VDD
V1
V1
S-8211E Series
S-8211E Series
VSS
VM
VSS
VM
DO
CO
DO
A
CO
A
IDO
V4
ICO
V3
Oscilloscope
Oscilloscope
V2
V2
COM
COM
Figure 7 Test Circuit 3
Figure 8 Test Circuit 4
12
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
Operation
Remark Refer to the “ Battery Protection IC Connection Example”.
1. Normal Status
The S-8211E Series monitors the voltage of the battery connected between the VDD and VSS pins.
In case of overdischarge detection voltage (VDL) ≤ battery voltage ≤ overcharge detection voltage (VCU), the output
levels of CO and DO pins are as follows. This is the normal status.
Table 12
CO Pin Output Logic
Active “H”
CO Pin
VVM
DO Pin
VDD
Active “L”
VDD
VDD
2. Overcharge Status
When the battery voltage in the normal status exceeds the overcharge detection voltage (VCU) during charge, and this
status is held for the overcharge detection delay time (tCU) or more, the output levels of CO and DO pins are as
follows. This is the overcharge status.
This overcharge status is released when the battery voltage decreases to the overcharge release voltage (VCL) or
less.
Table 13
CO Pin Output Logic
Active “H”
CO Pin
VDD
DO Pin
VDD
Active “L”
VVM
VDD
3. Overdischarge Status
When the battery voltage in the normal status decreases than the overcharge detection voltage (VDL) during
discharge, and this status is held for the overdischarge detection delay time (tDL) or more, the output levels of CO and
DO pins are as follows. This is the overdischarge status.
This overdischarge status is released when the battery voltage increases to the overdischarge release voltage (VDU
or more.
)
Table 14
CO Pin Output Logic
Active “H”
CO Pin
VVM
DO Pin
VSS
Active “L”
VDD
VSS
4. Delay Circuit
The detection delay times are determined by dividing a clock of approximately 3.5 kHz by the counter.
13
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
Timing Chart
1. Overcharge Detection, Overdischarge Detection
VCU
VCL
Battery voltage
VDU
VDL
VDD
DO pin voltage
VSS
VDD
CO pin voltage
(active ”H”)
VM
VDD
CO pin voltage
(active ”L”)
VM
Overcharge detection delay time (tCU
)
Overdischarge detection delay time (tDL)
*1
(1)
(2)
(1)
(3)
(1)
Status
*1. (1) : Normal status
(2) : Overcharge status
(3) : Overdischarge status
Figure 9
14
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
Battery Protection IC Connection Example
R1
VDD
Battery C1
S-8211E Series
VSS
R2
DO
CO
VM
CO
DO
Figure 10
Table 15 Constants for External Components
Symbol
R1
Part
Purpose
Min.
Typ.
Max.
Remark
Resistance should be as small as possible to
avoid lowering the overcharge detection
accuracy due to current consumption. *1
Connect a capacitor of 0.022 μF or higher
between VDD pin and VSS pin. *2
-
ESD protection,
For power fluctuation
Resistor
100 Ω
220 Ω
330 Ω
C1
Capacitor
Resistor
For power fluctuation
ESD protection
0.022 μF
300 Ω
0.1 μF
1 kΩ
1.0 μF
4 kΩ
R2*3
*1. Insert a resistor of 100 Ω or higher as R1 for ESD protection.
*2. If a capacitor of less than 0.022 μF is connected to C1, DO pin may oscillate. Be sure to connect a capacitor of 0.022 μF
or higher to C1.
*3. Be sure to using R2, connect the VM pin with the VSS pin.
Caution
1. The above constants may be changed without notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above
example of connection. In addition, the example of connection shown above and the constant do not
guarantee proper operation. Perform thorough evaluation using the actual application to set the
constant.
15
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
Application Circuit Examples
1. Protection circuits series multi-cells
R1
VDD
Battery
C1
S-8211E Series
VSS
R2
DO
CO
VM
CO
DO
R1
VDD
C1
Battery
S-8211E Series
VSS
R2
DO
CO
VM
CO
DO
R1
VDD
C1
Battery
S-8211E Series
VSS
R2
DO
CO
VM
CO
DO
R1
VDD
C1
Battery
S-8211E Series
VSS
R2
DO
CO
VM
CO
DO
Figure 11
16
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
2. Charge cell-balance detection circuit
R1
EB+
VDD
C1
Battery
S-8211E Series
VSS
DO
CO
VM
R2
R1
VDD
C1
Battery
S-8211E Series
VSS
R2
DO
CO
VM
R1
VDD
C1
Battery
S-8211E Series
VSS
R2
DO
CO
VM
Protection IC
R1
VDD
C1
Battery
S-8211E Series
VSS
R2
DO
CO
VM
EB−
Figure 12
17
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
Precautions
• The application conditions for the input voltage, output voltage, and load current should not exceed the package
power dissipation.
• Be sure to using R2, connect the VM pin with the VSS pin.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• SII Semiconductor Corporation claims no responsibility for any and all disputes arising out of or in connection with any
infringement by products including this IC of patents owned by a third party.
18
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
Characteristics (Typical Data)
1. Current Consumption
1. 1 IOPE vs. Ta
1. 2 IOPED vs. Ta
6
4
5
4
3
2
1
0
3
2
1
0
−40−25
0
25
Ta [°C]
50
7585
−40−25
0
25
Ta [°C]
50
7585
1. 3 IOPE vs. VDD
6
5
4
3
2
1
0
4
8
0
2
6
V
DD [V]
2. Overcharge Detection / Release Voltage, Overdischarge Detection / Release Voltage, Overcurrent
Detection Voltage, and Delay Time
2. 1 VCU vs. Ta
2. 2 VCL vs. Ta
4.350
4.345
4.340
4.335
4.330
4.325
4.320
4.315
4.125
4.115
4.105
4.095
4.085
4.075
4.065
4.055
4.045
4.035
4.025
4.310
4.305
4.300
−40−25
0
25
Ta [°C]
50
7585
0
−40−25
25
Ta [°C]
50
7585
2. 3 VDU vs. Ta
2.95
2. 4 VDL vs. Ta
2.60
2.58
2.56
2.54
2.52
2.50
2.48
2.46
2.44
2.42
2.40
2.94
2.93
2.92
2.91
2.90
2.89
2.88
2.87
2.86
2.85
−40 −25
0
25
50
7585
−40 −25
0
25
Ta [°C]
50
7585
Ta [°C]
19
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
2. 5 tCU vs. Ta
2. 6 tDL vs. Ta
1.50
1.45
1.40
1.35
200
190
180
170
1.30
160
1.25
150
1.20
1.15
1.10
140
130
120
1.05
110
1.00
100
−40 −25
0
25
50
7585
−40 −25
0
25
Ta [°C]
50
7585
Ta [°C]
3. CO pin / DO pin
3. 1 ICOH vs. VCO
3. 2 ICOL vs. VCO
0
0.5
−0.1
−0.2
−0.3
−0.4
0.4
0.3
0.2
0.1
−0.5
0
0
1
2
3
4
0
1
2
3
4
VCO [V]
VCO [V]
3. 3 IDOH vs. VDO
3. 4 IDOL vs. VDO
0
0.20
−0.05
−0.10
−0.15
−0.20
−0.25
0.15
0.10
0.05
−0.30
0
0
0.5
1.0
VDO [V]
1.5
0
1
2
DO [V]
3
4
V
20
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211E Series
Rev.2.4_02
Marking Specifications
1. SOT-23-5
Top view
(1) to (3):
Product Code (refer to Product Name vs. Product Code)
5
4
(4)
:
Lot number
(1) (2) (3) (4)
1
2
3
Product Name vs. Product Code
Product Code
(2)
Product Name
(1)
(3)
C
F
S-8211EAC-M5T1U
S-8211EAF-M5T1U
S-8211EAG-M5T1U
S-8211EAJ-M5T1U
S-8211EAK-M5T1U
R
3
3
3
3
3
R
R
R
R
G
J
K
2. SNT-6A
Top view
(1) to (3):
(4) to (6):
Product Code (refer to Product Name vs. Product Code)
Lot number
6
5
4
(1) (2) (3)
(4) (5) (6)
1
2
3
Product Name vs. Product Code
Product Code
Product Name
(1)
(2)
(3)
A
B
D
E
H
I
S-8211EAA-I6T1U
S-8211EAB-I6T1U
S-8211EAD-I6T1U
S-8211EAE-I6T1U
S-8211EAH-I6T1U
S-8211EAI-I6T1U
S-8211EAP-I6T1U
R
3
3
3
3
3
3
3
R
R
R
R
R
R
P
21
2.9±0.2
1.9±0.2
4
5
+0.1
-0.06
1
2
3
0.16
0.95±0.1
0.4±0.1
No. MP005-A-P-SD-1.2
TITLE
SOT235-A-PKG Dimensions
MP005-A-P-SD-1.2
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
4.0±0.1(10 pitches:40.0±0.2)
+0.1
-0
2.0±0.05
0.25±0.1
ø1.5
+0.2
-0
4.0±0.1
ø1.0
1.4±0.2
3.2±0.2
3
4
2 1
5
Feed direction
No. MP005-A-C-SD-2.1
TITLE
SOT235-A-Carrier Tape
MP005-A-C-SD-2.1
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. MP005-A-R-SD-1.1
TITLE
SOT235-A-Reel
MP005-A-R-SD-1.1
No.
SCALE
UNIT
QTY.
3,000
mm
SII Semiconductor Corporation
1.57±0.03
6
5
4
+0.05
-0.02
0.08
1
2
3
0.5
0.48±0.02
0.2±0.05
No. PG006-A-P-SD-2.0
SNT-6A-A-PKG Dimensions
PG006-A-P-SD-2.0
TITLE
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
+0.1
-0
ø1.5
4.0±0.1
2.0±0.05
0.25±0.05
+0.1
ø0.5
-0
4.0±0.1
0.65±0.05
1.85±0.05
5°
3
2
5
1
6
4
Feed direction
No. PG006-A-C-SD-1.0
TITLE
SNT-6A-A-Carrier Tape
PG006-A-C-SD-1.0
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. PG006-A-R-SD-1.0
SNT-6A-A-Reel
TITLE
PG006-A-R-SD-1.0
No.
SCALE
UNIT
QTY.
5,000
SII Semiconductor Corporation
0.52
2
1.36
0.52
1
0.3
0.2
1.
2.
(0.25 mm min. / 0.30 mm typ.)
(1.30 mm ~ 1.40 mm)
0.03 mm
SNT
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package ( 1.30 mm ~ 1.40 mm ).
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
(0.25 mm min. / 0.30 mm typ.)
(1.30 mm ~ 1.40 mm)
1.
2.
SNT-6A-A
-Land Recommendation
TITLE
No. PG006-A-L-SD-4.1
No.
PG006-A-L-SD-4.1
SCALE
UNIT
mm
SII Semiconductor Corporation
Disclaimers (Handling Precautions)
1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.
2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of
any specific mass-production design.
SII Semiconductor Corporation is not responsible for damages caused by the reasons other than the products or
infringement of third-party intellectual property rights and any other rights due to the use of the information described
herein.
3. SII Semiconductor Corporation is not responsible for damages caused by the incorrect information described herein.
4. Take care to use the products described herein within their specified ranges. Pay special attention to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
SII Semiconductor Corporation is not responsible for damages caused by failures and/or accidents, etc. that occur
due to the use of products outside their specified ranges.
5. When using the products described herein, confirm their applications, and the laws and regulations of the region or
country where they are used and verify suitability, safety and other factors for the intended use.
6. When exporting the products described herein, comply with the Foreign Exchange and Foreign Trade Act and all
other export-related laws, and follow the required procedures.
7. The products described herein must not be used or provided (exported) for the purposes of the development of
weapons of mass destruction or military use. SII Semiconductor Corporation is not responsible for any provision
(export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons,
missiles, or other military use.
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human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems,
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aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle
use or other uses. Do not use those products without the prior written permission of SII Semiconductor Corporation.
Especially, the products described herein cannot be used for life support devices, devices implanted in the human
body and devices that directly affect human life, etc.
Prior consultation with our sales office is required when considering the above uses.
SII Semiconductor Corporation is not responsible for damages caused by unauthorized or unspecified use of our
products.
9. Semiconductor products may fail or malfunction with some probability.
The user of these products should therefore take responsibility to give thorough consideration to safety design
including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing
injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction.
The entire system must be sufficiently evaluated and applied on customer's own responsibility.
10. The products described herein are not designed to be radiation-proof. The necessary radiation measures should be
taken in the product design by the customer depending on the intended use.
11. The products described herein do not affect human health under normal use. However, they contain chemical
substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips
may be sharp. Take care when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products described herein, comply with the laws and ordinances of the country or region where
they are used.
13. The information described herein contains copyright information and know-how of SII Semiconductor Corporation.
The information described herein does not convey any license under any intellectual property rights or any other
rights belonging to SII Semiconductor Corporation or a third party. Reproduction or copying of the information
described herein for the purpose of disclosing it to a third-party without the express permission of SII Semiconductor
Corporation is strictly prohibited.
14. For more details on the information described herein, contact our sales office.
1.0-2016.01
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