S-8244ABDPH-CFDTFU [SII]
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK;
| 型号： | S-8244ABDPH-CFDTFU |
| 厂家： | 
SEIKO INSTRUMENTS INC |
| 描述： | BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK |
| 文件： | 总32页 (文件大小：1554K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S-8244 Series
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK
(SECONDARY PROTECTION)
www.sii-ic.com
© SII Semiconductor Corporation, 2003-2015
Rev.6.4_02
The S-8244 Series is used for secondary protection of lithium-ion batteries with from one to four cells, and incorporates a
high-precision voltage detector circuit and a delay circuit. Short-circuiting between cells makes it possible for serial
connection of one to four cells.
Features
(1) Internal high-precision voltage detector circuit
• Overcharge detection voltage range: 3.700 V to 4.550 V: Accuracy of 25 mV (at +25°C)
(at a 5 mV/step)
Accuracy of 50 mV (at −40°C to +85°C)
• Hysteresis:
5 types
0.38 0.1 V, 0.25 0.07 V, 0.13 0.04 V, 0.045 0.02 V, None
Absolute maximum rating: 26 V
(2) High-withstand voltage:
(3) Wide operating voltage range:
3.6 V to 24 V (refers to the range in which the delay circuit can operate
normally after overvoltage is detected)
Can be set by an external capacitor.
At 3.5 V for each cell: 3.0 μA max. (+25°C)
At 2.3 V for each cell: 2.4 μA max. (+25°C)
5 types
(4) Delay time during detection:
(5) Low current consumption:
(6) Output logic and form:
CMOS output active “H”
CMOS output active “L”
Pch open drain output active “L”
Nch open drain output active “H”
Nch open drain output active “L”
(CMOS / Nch open drain output for 0.045 V hysteresis models)
(7) Lead-free, Sn 100%, halogen-free*1
*1. Refer to “ Product Name Structure” for details.
Applications
• Lithium ion rechargeable battery packs (secondary protection)
Packages
• SNT-8A
• 8-Pin MSOP
• TMSOP-8
1
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
S-8244 Series
Rev.6.4_02
Block Diagram
VCC
Overcharge detection
comparator 1
SENSE
+
-
Reference voltage 1
Overcharge
detection
delay circuit
Overcharge detection
comparator 2
VC1
ICT
+
-
Control
logic
Reference voltage 2
VC2
Overcharge detection
comparator 3
+
-
CO
Reference voltage 3
VC3
Overcharge detection
comparator 4
+
-
Reference voltage 4
VSS
Remark In the case of Nch open-drain output, only the Nch transistor will be connected to the CO pin.
In the case of Pch open-drain output, only the Pch transistor will be connected to the CO pin.
Figure 1
2
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
Rev.6.4_02
S-8244 Series
Product Name Structure
1. Product Name
(1) SNT-8A
S-8244A
xx
PH
-
xxx
TF
U
Environmental code
U: Lead-free (Sn 100%), halogen-free
IC direction of tape specifications*1
Product name (abbreviation)*2
Package abbreviation
PH: SNT-8A
Serial code
Sequentially set from AA to ZZ
*1. Refer to the tape drawing.
*2. Refer to “3. Product Name List”.
(2) 8-Pin MSOP
S-8244A
xx
FN
-
xxx
T2
x
Environmental code
S: Lead-free, halogen-free
G: Lead-free (for details, please contact our sales office)
IC direction of tape specifications*1
Product name (abbreviation)*2
Package abbreviation
FN: 8-Pin MSOP
Serial code
Sequentially set from AA to ZZ
*1. Refer to the tape drawing.
*2. Refer to “3. Product Name List”.
3
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
S-8244 Series
Rev.6.4_02
(3) TMSOP-8
S-8244A
xx
FM
-
xxx
T2
U
Environmental code
U: Lead-free (Sn 100%), halogen-free
IC direction of tape specifications*1
Product name (abbreviation)*2
Package abbreviation
FM: TMSOP-8
Serial code
Sequentially set from AA to ZZ
*1. Refer to the tape drawing.
*2. Refer to “3. Product Name List”.
2. Packages
Drawing code
Reel
Package name
Package
Tape
Land
SNT-8A
PH008-A-P-SD
FN008-A-P-SD
FM008-A-P-SD
PH008-A-C-SD
FN008-A-C-SD
FM008-A-C-SD
PH008-A-R-SD
FN008-A-R-SD
FM008-A-R-SD
PH008-A-L-SD
8-Pin MSOP
TMSOP-8
⎯
⎯
3. Product Name List
(1) SNT-8A
Table 1
Overcharge detection voltage Overcharge hysteresis voltage
[VCU [VCD
Product name
Output form
]
]
S-8244AAAPH-CEATFU
S-8244AABPH-CEBTFU
S-8244AADPH-CEDTFU
4.450 0.025 V
4.200 0.025 V
4.200 0.025 V
0.38 0.1 V
CMOS output active “H”
Nch open drain active “H”
Pch open drain active “L”
0 V
0 V
S-8244AAFPH-CEFTFU
S-8244AAGPH-CEGTFU
S-8244AAJPH-CEJTFU
S-8244AASPH-CESTFU
S-8244AATPH-CETTFU
4.350 0.025 V
4.450 0.025 V
4.500 0.025 V
4.350 0.025 V
4.200 0.025 V
0.045 0.02 V
0.045 0.02 V
0.38 0.1 V
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
0.38 0.1 V
0.25 0.07 V
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “L”
Nch open drain active “L”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
S-8244AAVPH-CEVTFU
S-8244AAYPH-CEYTFU
S-8244AAZPH-CEZTFU
S-8244ABBPH-CFBTFU
S-8244ABDPH-CFDTFU
S-8244ABEPH-CFETFU
S-8244ABHPH-CFHTFU
S-8244ABMPH-CFMTFU
S-8244ABOPH-CFOTFU
4.275 0.025 V
4.300 0.025 V
4.280 0.025 V
4.380 0.025 V
4.150 0.025 V
4.215 0.025 V
4.280 0.025 V
4.100 0.025 V
4.550 0.025 V
0.045 0.02 V
0.25 0.07 V
0.25 0.07 V
0.25 0.07 V
0.045 0.02 V
0 V
0.045 0.02 V
0.25 0.07 V
0.38 0.1 V
Remark Please contact our sales office for the products with the detection voltage value other than those specified above.
4
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
Rev.6.4_02
S-8244 Series
(2) 8-Pin MSOP
Table 2
Overcharge hysteresis voltage
[VCD
Overcharge detection
voltage
Product name
]
Output form
[VCU
]
S-8244AAAFN-CEAT2z
S-8244AABFN-CEBT2z
S-8244AACFN-CECT2z
S-8244AADFN-CEDT2z
S-8244AAEFN-CEET2z
S-8244AAFFN-CEFT2z
S-8244AAGFN-CEGT2z
S-8244AAHFN-CEHT2z
S-8244AAIFN-CEIT2z
S-8244AAJFN-CEJT2z
S-8244AAKFN-CEKT2z
S-8244AALFN-CELT2z
S-8244AAMFN-CEMT2z
S-8244AANFN-CENT2z
S-8244AAOFN-CEOT2z
S-8244AAPFN-CEPT2z
S-8244AAQFN-CEQT2z
S-8244AARFN-CERT2z
S-8244AATFN-CETT2z
S-8244AAUFN-CEUT2z
S-8244AAWFN-CEWT2z
S-8244AAXFN-CEXT2z
S-8244AAZFN-CEZT2S
S-8244ABAFN-CFAT2z
S-8244ABCFN-CFCT2z
S-8244ABGFN-CFGT2S
S-8244ABIFN-CFIT2S
S-8244ABJFN-CFJT2S
S-8244ABKFN-CFKT2S
4.450 0.025 V
4.200 0.025 V
4.115 0.025 V
4.200 0.025 V
4.225 0.025 V
4.350 0.025 V
4.450 0.025 V
4.300 0.025 V
4.400 0.025 V
4.500 0.025 V
4.475 0.025 V
4.350 0.025 V
4.300 0.025 V
4.150 0.025 V
4.250 0.025 V
4.050 0.025 V
4.150 0.025 V
4.300 0.025 V
4.200 0.025 V
3.825 0.025 V
4.500 0.025 V
4.025 0.025 V
4.280 0.025 V
4.220 0.025 V
3.750 0.025 V
4.225 0.025 V
4.100 0.025 V
4.325 0.025 V
4.175 0.025 V
0.38 0.1 V
0 V
CMOS output active “H”
Nch open drain active “H”
CMOS output active “H”
Pch open drain active “L”
Nch open drain active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “L”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
Nch open drain active “H”
Nch open drain active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “L”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
Nch open drain active “L”
Nch open drain active “L”
Nch open drain active “L”
Nch open drain active “L”
0.13 0.04 V
0 V
0 V
0.045 0.02 V
0.045 0.02 V
0.25 0.07 V
0.045 0.02 V
0.38 0.1 V
0.38 0.1 V
0.25 0.07 V
0.25 0.07 V
0.25 0.07 V
0.25 0.07 V
0.25 0.07 V
0 V
0.25 0.07 V
0.25 0.07 V
0.25 0.07 V
0.38 0.1 V
0.25 0.07 V
0.25 0.07 V
0.045 0.02 V
0.25 0.07 V
0.045 0.02 V
0 V
0.045 0.02 V
0 V
Remark 1. Please contact our sales office for the products with the detection voltage value other than those specified above.
2. z: G or S
5
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
S-8244 Series
Rev.6.4_02
(3) TMSOP-8
Table 3
Overcharge detection voltage Overcharge hysteresis voltage
Product name
Output form
[VCU
]
[VCD]
S-8244AAAFM-CEAT2U
S-8244AABFM-CEBT2U
S-8244AAFFM-CEFT2U
S-8244AAGFM-CEGT2U
S-8244AAHFM-CEHT2U
S-8244AAIFM-CEIT2U
S-8244AAJFM-CEJT2U
S-8244AALFM-CELT2U
S-8244AANFM-CENT2U
4.450 0.025 V
4.200 0.025 V
4.350 0.025 V
4.450 0.025 V
4.300 0.025 V
4.400 0.025 V
4.500 0.025 V
4.350 0.025 V
4.150 0.025 V
4.050 0.025 V
4.150 0.025 V
3.825 0.025 V
4.275 0.025 V
4.025 0.025 V
4.220 0.025 V
4.225 0.025 V
4.100 0.025 V
4.325 0.025 V
4.175 0.025 V
4.225 0.025 V
0.38 0.1 V
0 V
CMOS output active “H”
Nch open drain active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
Nch open drain active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
CMOS output active “H”
Nch open drain active “L”
Nch open drain active “L”
Nch open drain active “L”
Nch open drain active “L”
Nch open drain active “L”
0.045 0.02 V
0.045 0.02 V
0.25 0.07 V
0.045 0.02 V
0.38 0.1 V
0.25 0.07 V
0.25 0.07 V
0.25 0.07 V
0 V
S-8244AAPFM-CEPT2U
S-8244AAQFM-CEQT2U
S-8244AAUFM-CEUT2U
S-8244AAVFM-CEVT2U
S-8244AAXFM-CEXT2U
S-8244ABAFM-CFAT2U
S-8244ABGFM-CFGT2U
S-8244ABIFM-CFIT2U
S-8244ABJFM-CFJT2U
S-8244ABKFM-CFKT2U
S-8244ABNFM-CFNT2U
0.25 0.07 V
0.045 0.02 V
0.25 0.07 V
0.045 0.02 V
0.045 0.02 V
0 V
0.045 0.02 V
0 V
0.38 0.1 V
Remark Please contact our sales office for the products with the detection voltage value other than those specified above.
6
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
Rev.6.4_02
S-8244 Series
Pin Configurations
Table 4
Pin No. Symbol
Description
SNT-8A
Top view
1
CO
FET gate connection pin for charge control
Capacitor connection pin for overcharge detection
delay
2
ICT
CO
ICT
1
2
3
4
8
7
VCC
SENSE
VC1
Input pin for negative power supply,
3
4
5
6
VSS
VC3
VC2
VC1
Connection pin for battery 4’s negative voltage
Connection pin for battery 3’s negative voltage,
Connection pin for battery 4’s positive voltage
Connection pin for battery 2’s negative voltage,
Connection pin for battery 3’s positive voltage
Connection pin for battery 1’s negative voltage,
Connection pin for battery 2’s positive voltage
VSS
VC3
6
5
VC2
7
8
SENSE Connection pin for battery 1’s positive voltage
VCC Input pin for positive power supply
Figure 2
Table 5
Pin No. Symbol
Description
8-Pin MSOP
Top view
1
2
VCC Input pin for positive power supply
SENSE Connection pin for battery 1’s positive voltage
CO
VCC
Connection pin for battery 1’s negative voltage,
VC1
8
7
1
2
3
4
5
6
Connection pin for battery 2’s positive voltage
ICT
SENSE
Connection pin for battery 2’s negative voltage,
VC2
VSS
VC3
3
4
6
5
VC1
VC2
Connection pin for battery 3’s positive voltage
Connection pin for battery 3’s negative voltage,
VC3
Connection pin for battery 4’s positive voltage
Input pin for negative power supply,
VSS
Connection pin for battery 4’s negative voltage
Capacitor connection pin for overcharge detection
delay
7
8
ICT
Figure 3
CO
FET gate connection pin for charge control
Table 6
Pin No. Symbol
Description
TMSOP-8
Top view
1
2
VCC Input pin for positive power supply
SENSE Connection pin for battery 1’s positive voltage
1
2
3
4
8
VCC
SENSE
VC1
CO
Connection pin for battery 1’s negative voltage,
VC1
3
4
5
6
Connection pin for battery 2’s positive voltage
7
6
5
ICT
VSS
VC3
Connection pin for battery 2’s negative voltage,
VC2
Connection pin for battery 3’s positive voltage
VC2
Connection pin for battery 3’s negative voltage,
VC3
Connection pin for battery 4’s positive voltage
Input pin for negative power supply,
VSS
Connection pin for battery 4’s negative voltage
Capacitor connection pin for overcharge detection
delay
7
8
ICT
Figure 4
CO
FET gate connection pin for charge control
7
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
S-8244 Series
Rev.6.4_02
Absolute Maximum Ratings
Table 7
Applied pin
(Ta = 25°C unless otherwise specified)
Item
Symbol
VDS
Absolute maximum ratings
Unit
V
Input voltage between VCC and VSS
Delay capacitor connection pin voltage
VCC
ICT
VSS−0.3 to VSS +26
VICT
VSS −0.3 to VCC +0.3
V
SENSE, VC1,
VC2, VC3
Input pin voltage
VIN
VSS −0.3 to VCC +0.3
V
(CMOS output)
CO output pin
VSS −0.3 to VCC +0.3
VSS −0.3 to 26
VCC −26 to VCC +0.3
450*1
V
V
(Nch open drain output)
voltage
VCO
CO
(Pch open drain output)
V
SNT-8A
mW
mW
mW
°C
Power
8-Pin MSOP
dissipation
500*1
650*1
PD
⎯
TMSOP-8
Operating ambient temperature
Storage temperature
Topr
Tstg
⎯
⎯
−40 to +85
−40 to +125
°C
*1. When mounted on board
[Mounted board]
(1) Board size : 114.3 mm × 76.2 mm × t1.6 mm
(2) Name : JEDEC STANDARD51-7
Caution
The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
700
600
TMSOP-8
8-Pin MSOP
500
400
300
200
SNT-8A
100
0
0
50
100
150
Ambient Temperature (Ta) [°C]
Figure 5 Power Dissipation of Package (When Mounted on Board)
8
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
Rev.6.4_02
S-8244 Series
Electrical Characteristics
Table 8
(Ta = 25 °C unless otherwise specified)
Test
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test circuit
conditions
DETECTION VOLTAGE
VCU1
0.025
VCU2
0.025
VCU3
0.025
VCU4
0.025
0.28
VCU1
Overcharge detection voltage 1 *1 VCU1
3.7 V to 4.55 V Adjustment
3.7 V to 4.55 V Adjustment
3.7 V to 4.55 V Adjustment
3.7 V to 4.55 V Adjustment
VCU1
VCU2
VCU3
VCU4
V
V
V
V
1
2
3
4
1
1
1
1
−
−
−
−
+
0.025
VCU2
0.025
VCU3
0.025
VCU4
0.025
0.48
Overcharge detection voltage 2 *1 VCU2
Overcharge detection voltage 3 *1 VCU3
Overcharge detection voltage 4 *1 VCU4
+
+
+
Overcharge hysteresis voltage 1 *2 VCD1
Overcharge hysteresis voltage 2 *2 VCD2
Overcharge hysteresis voltage 3 *2 VCD3
Overcharge hysteresis voltage 4 *2 VCD4
⎯
⎯
⎯
⎯
0.38
0.38
0.38
0.38
V
V
V
V
1
2
3
4
1
1
1
1
0.28
0.48
0.28
0.48
0.28
0.48
Detection voltage
TCOE
Ta =
−
40
°
C to
+
85
°
C*4
−
0.4
0.0
1.5
⎯
+
0.4
mV/
°
C
⎯
⎯
temperature coefficient *3
DELAY TIME
Overcharge detection delay time
OPERATING VOLTAGE
Operating voltage
between VCC and VSS *5
CURRENT CONSUMPTION
Current consumption
during normal operation
Current consumption at
power down
tCU
C = 0.1
μ
F
1.0
3.6
2.0
24
s
5
2
VDSOP
⎯
V
⎯
⎯
IOPE
IPDN
V1 = V2 = V3 = V4 = 3.5 V
V1 = V2 = V3 = V4 = 2.3 V
⎯
⎯
1.5
1.2
3.0
2.4
μ
A
6
6
3
3
μ
A
VC1 sink current
IVC1
IVC2
IVC3
V1 = V2 = V3 = V4 = 3.5 V
V1 = V2 = V3 = V4 = 3.5 V
V1 = V2 = V3 = V4 = 3.5 V
−
−
−
0.3
0.3
0.3
⎯
⎯
⎯
0.3
0.3
0.3
μ
μ
μ
A
A
A
6
6
6
3
3
3
VC2 sink current
VC3 sink current
OUTPUT VOLTAGE*6
VCC
CO “H” voltage
CO “L” voltage
VCO(H)
VCO(L)
at IOUT = 10
at IOUT = 10
μ
μ
A
A
⎯
⎯
⎯
V
7
7
4
4
−
0.05
VSS
⎯
V
+
0.05
*1.
50 mV when Ta = −40°C to +85°C.
*2. 0.25 0.07 V, 0.13 0.04 V, 0.045 0.02 V except for 0.38 V hysteresis models.
*3. Overcharge detection voltage or overcharge hysteresis voltage.
*4. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
*5. After detecting the overcharge, the delay circuit operates normally in the range of operating voltage.
*6. Output logic and CMOS or open drain output can be selected.
9
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
S-8244 Series
Rev.6.4_02
Test Circuits
(1) Test Condition 1, Test Circuit 1
Set switches 1 and 2 to OFF for CMOS output product.
Set switch 1 to ON and switch 2 to OFF for Nch open drain product.
Set switch 1 to OFF and switch 2 to ON for Pch open drain product.
• Product with CMOS output active “H”, Nch open drain output active “H”
The overcharge detection voltage 1 (VCU1) is a voltage at V1; when the CO pin’s voltage is set to “H” by increasing
V1 gradually, after setting V1 = V2 = V3 = V4 = 3.5 V. After that, gradually decreasing V1’s voltage to set CO = “L”,
and the difference of this V1’s voltage and VCU1 is the overcharge hysteresis voltage 1 (VCD1).
• Product with CMOS output active “L”, Nch open drain output active “L”, Pch open drain output active “L”
The overcharge detection voltage 1 (VCU1) is a voltage at V1; when the CO pin’s voltage is set to “L” by increasing
V1 gradually, after setting V1 = V2 = V3 = V4 = 3.5 V. After that, gradually decreasing V1’s voltage to set CO =
“H”, and the difference of this V1’s voltage and VCU1 is the overcharge hysteresis voltage 1 (VCD1).
(2) Test Condition 2, Test Circuit 1
Set switches 1 and 2 to OFF for CMOS output product.
Set switch 1 to ON and switch 2 to OFF for Nch open drain product.
Set switch 1 to OFF and switch 2 to ON for Pch open drain product.
• Product with CMOS output active “H”, Nch open drain output active “H”
The overcharge detection voltage 2 (VCU2) is a voltage at V2; when the CO pin’s voltage is set to “H” by increasing
V2 gradually, after setting V1 = V2 = V3 = V4 = 3.5 V. After that, gradually decreasing V2’s voltage to set CO = “L”,
and the difference of this V2’s voltage and VCU2 is the overcharge hysteresis voltage 2 (VCD2).
• Product with CMOS output active “L”, Nch open drain output active “L”, Pch open drain output active “L”
The overcharge detection voltage 2 (VCU2) is a voltage at V2; when the CO pin’s voltage is set to “L” by increasing
V2 gradually, after setting V1 = V2 = V3 = V4 = 3.5 V. After that, gradually decreasing V2’s voltage to set CO =
“H”, and the difference of this V2’s voltage and VCU2 is the overcharge hysteresis voltage 2 (VCD2).
(3) Test Condition 3, Test Circuit 1
Set switches 1 and 2 to OFF for CMOS output product.
Set switch 1 to ON and switch 2 to OFF for Nch open drain product.
Set switch 1 to OFF and switch 2 to ON for Pch open drain product.
• Product with CMOS output active “H”, Nch open drain output active “H”
The overcharge detection voltage 3 (VCU3) is a voltage at V3; when the CO pin’s voltage is set to “H” by increasing
V3 gradually, after setting V1 = V2 = V3 = V4 = 3.5 V. After that, gradually decreasing V3’s voltage to set CO = “L”,
and the difference of this V3’s voltage and VCU3 is the overcharge hysteresis voltage 3 (VCD3).
• Product with CMOS output active “L”, Nch open drain output active “L”, Pch open drain output active “L”
The overcharge detection voltage 3 (VCU3) is a voltage at V3; when the CO pin’s voltage is set to “L” by increasing
V3 gradually, after setting V1 = V2 = V3 = V4 = 3.5 V. After that, gradually decreasing V3’s voltage to set CO =
“H”, and the difference of this V3’s voltage and VCU3 is the overcharge hysteresis voltage 3 (VCD3).
10
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
Rev.6.4_02
S-8244 Series
(4) Test Condition 4, Test Circuit 1
Set switches 1 and 2 to OFF for CMOS output product.
Set switch 1 to ON and switch 2 to OFF for Nch open drain product.
Set switch 1 to OFF and switch 2 to ON for Pch open drain product.
• Product with CMOS output active “H”, Nch open drain output active “H”
The overcharge detection voltage 4 (VCU4) is a voltage at V4; when the CO pin’s voltage is set to “H” by increasing
V4 gradually, after setting V1 = V2 = V3 = V4 = 3.5 V. After that, gradually decreasing V4’s voltage to set CO = “L”,
and the difference of this V4’s voltage and VCU4 is the overcharge hysteresis voltage 4 (VCD4).
• Product with CMOS output active “L”, Nch open drain output active “L”, Pch open drain output active “L”
The overcharge detection voltage 4 (VCU4) is a voltage at V4; when the CO pin’s voltage is set to “L” by increasing
V4 gradually, after setting V1 = V2 = V3 = V4 = 3.5 V. After that, gradually decreasing V4’s voltage to set CO =
“H”, and the difference of this V4’s voltage and VCU4 is the overcharge hysteresis voltage 4 (VCD4).
(5) Test Condition 5, Test Circuit 2
Set switches 1 and 2 to OFF for CMOS output product.
Set switch 1 to ON and switch 2 to OFF for Nch open drain product.
Set switch 1 to OFF and switch 2 to ON for Pch open drain product.
• Product with CMOS output active “H”, Nch open drain output active “H”
Rise V1 to 4.7 V momentarily within 10 μs after setting V1 = V2 = V3 = V4 = 3.5 V. The period from V1 having
reached 4.7 V to CO = “H” is the overcharge detection delay time (tCU).
• Product with CMOS output active “L”, Nch open drain output active “L”, Pch open drain output active “L”
Rise V1 to 4.7 V momentarily within 10 μs after setting V1 = V2 = V3 = V4 = 3.5 V. The period from V1 having
reached 4.7 V to CO = “L” is the overcharge detection delay time (tCU).
(6) Test Condition 6, Test Circuit 3
Measure current consumption (I1) setting V1 = V2 = V3 = V4 = 2.3 V. This I1 is current consumption at power-down
(IPDN).
Measure current consumption (I1) setting V1 = V2 = V3 = V4 = 3.5 V. This I1 is current consumption during normal
operation (IOPE), I2 is the VC1 sink current (IVC1), I3 is the VC2 sink current (IVC2), I4 is the VC3 sink current (IVC3).
11
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
S-8244 Series
Rev.6.4_02
(7) Test Condition 7, Test Circuit 4
Measure setting switch 1 to OFF and switch 2 to ON.
• Product with CMOS output active “H”
Decrease V6 from VCC gradually after setting V1 = V2 = V3 = V4 = 4.6 V, the V6’s voltage when flowing I2 = −10
μA is the VCO(H) voltage.
Increase V6 from 0 V gradually after setting V1 = V2 = V3 = V4 = 3.5 V, the V6’s voltage when flowing I2 = 10 μA
is the VCO(L) voltage.
• Product with CMOS output active “L”
Decrease V6 from VCC gradually after setting V1 = V2 = V3 = V4 = 3.5 V, the V6’s voltage when flowing I2 = −10
μA is the VCO(H) voltage.
Increase V6 from 0 V gradually after setting V1 = V2 = V3 = V4 = 4.6 V, the V6’s voltage when flowing I2 = 10 μA
is the VCO(L) voltage.
• Product with Pch open drain output active “L”
Decrease V6 from VCC gradually after setting V1 = V2 = V3 = V4 = 3.5 V, the V6’s voltage when flowing I2 = −10
μA is the VCO(H) voltage.
• Product with Nch open drain output active “H”
Increase V6 from 0 V gradually after setting V1 = V2 = V3 = V4 = 3.5 V, the V6’s voltage when flowing I2 = 10 μA
is the VCO(L) voltage.
• Product with Nch open drain output active “L”
Increase V6 from 0 V gradually after setting V1 = V2 = V3 = V4 = 4.6 V, the V6’s voltage when flowing I2 = 10 μA
is the VCO(L) voltage.
12
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
Rev.6.4_02
S-8244 Series
10 MΩ
S-8244
10 MΩ
S-8244
SW1
SW2
SW1
SW2
VCC
CO
VCC
CO
SENSE
VC1
ICT
SENSE
VC1
ICT
0.1 μF
V4
V1
V2
V1
V2
V
V
VSS
VSS
V4
VC2
VC3
VC2
VC3
10 MΩ
10 MΩ
V3
V3
Test Circuit
1
Test Circuit
2
I1
S-8244
V5
SW1
SW2
VCC
CO
ICT
S-8244
VCC
CO
ICT
SENSE
VC1
I1 V1
V2
I2
I3
SENSE
VC1
VSS
V1
V2
V4
V
I4
VSS
VC2
VC3
V4
I2
V3
VC2
VC3
V6
V3
Test Circuit
3
Test Circuit
4
Figure 6
13
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
S-8244 Series
Rev.6.4_02
Operation
Remark Refer to “ Battery Protection IC Connection Example”.
1. Overcharge Detection
• Product with CMOS output active “H”, Nch open drain output active “H”
During charging in the normal status, the voltage of one of the batteries exceeds overcharge detection voltage
(VCU), and this status is maintained for overcharge detection delay time (tCU) or longer, CO gets “H”. This is
overcharge status. Connecting an FET to the CO pin enables charge-control and the second protect.
In this case, the IC maintains the overcharge status until the voltage of each of the batteries decreases, to the
overcharge hysteresis voltage (VCD) from the overcharge detection voltage (VCU).
• Product with CMOS output active “L”, Nch open drain output active “L”, Pch open drain output active “L”
During charging in the normal status, the voltage of one of the batteries exceeds overcharge detection voltage
(VCU), and this status is maintained for overcharge detection delay time (tCU) or longer, CO gets “L”. This is
overcharge status. Connecting an FET to the CO pin enables charge-control and the second protect.
In this case, the IC maintains the overcharge status until the voltage of each of the batteries decreases, to the
overcharge hysteresis voltage (VCD) from the overcharge detection voltage (VCU).
2. Delay Circuit
The delay circuit rapidly charges the capacitor connected to the delay capacitor connection pin up to a specified
voltage when the voltage of one of the batteries exceeds the overcharge detection voltage (VCU). Then, the delay
circuit gradually discharges the capacitor at 100 nA and inverts the CO output when the voltage at the delay
capacitor connection pin goes below a specified level. Overcharge detection delay time (tCU) varies depending
upon the external capacitor.
Each delay time is calculated using the following equation.
Min. Typ. Max.
tCU[s] = Delay Coefficient (10,
15,
20) × CICT [μF]
Because the delay capacitor is rapidly charged, the smaller the capacitance, the larger the difference between the
maximum voltage and the specified value of delay capacitor pin (ICT pin). This will cause a deviation between the
calculated delay time and the resultant delay time. Also, delay time is internally set in this IC to prevent the CO
output from inverting until the charge to delay capacitor pin is reached to the specified voltage. If large
capacitance is used, output may be enabled without delay time because charge is disabled within the internal delay
time.
Please note that the maximum capacitance connected to the delay capacitor pin (ICT pin) is 1 μF.
14
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
Rev.6.4_02
S-8244 Series
Timing Chart
VCD
V1 battery
V2 battery
V3 battery
V4 battery
VCU
Battery voltage
VSS
VCC
CMOS output active “H” and
Nch open drain output active “H” products
CO pin voltage
VSS
VCC
CMOS output active “L” ,
Pch open drain output active “L” and
Nch open drain output active “L” products
CO pin voltage
VSS
ICT pin voltage
VSS
Delay
Figure 7
15
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
S-8244 Series
Rev.6.4_02
Battery Protection IC Connection Example
(1) Connection Example 1
SC PROTECTOR
EB+
RVCC
SENSE
VC1
VCC
R1
R2
R3
R4
CVCC
C1
C2
C3
C4
BAT1
BAT2
BAT3
BAT4
VC2
ICT
CICT
VC3
VSS
FET
CO
EB−
Figure 8
Table 9 Constants for External Components 1
Symbol
Min.
0
Typ.
1 k
Max.
10 k
1
Unit
Ω
μF
Ω
μF
μF
R1 to R4
C1 to C4
RVCC
0
0.1
100
0.1
0.1
0
1 k
1
CVCC
0
CICT
0
1
Caution1. The above constants may be changed without notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above
example of connection. In addition, the example of connection shown above and the constant do
not guarantee proper operation. Perform thorough evaluation using the actual application to set
the constant.
[For SC PROTECTOR, contact]
Device Sales Dept., Advanced Process Device Division, Dexerials Corporation
Gate City Osaki East Tower 8F, 1-11-2
Osaki, Shinagawa-ku, Tokyo, 141-0032 Japan
TEL +81-3-5435-3946
Contact Us: http://www.dexerials.jp/en/
16
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
Rev.6.4_02
S-8244 Series
(2) Connection Example 2 (for 3-cells)
SC PROTECTOR
EB+
RVCC
VCC
SENSE
R1
R2
R3
CVCC
C1
C2
C3
BAT1
BAT2
BAT3
VC1
VC2
ICT
CICT
VC3
VSS
FET
CO
EB−
Figure 9
Table 10 Constants for External Components 2
Symbol
Min.
0
Typ.
1 k
Max.
10 k
1
Unit
Ω
μF
Ω
μF
μF
R1 to R3
C1 to C3
RVCC
0
0.1
100
0.1
0.1
0
1 k
1
CVCC
0
CICT
0
1
Caution1. The above constants may be changed without notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above
example of connection. In addition, the example of connection shown above and the constant do
not guarantee proper operation. Perform thorough evaluation using the actual application to set
the constant.
17
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
S-8244 Series
Rev.6.4_02
(3) Connection Example 3 (for 2-cells)
SC PROTECTOR
EB+
RVCC
VCC
SENSE
VC1
R1
CVCC
C1
C2
BAT1
BAT2
R2
VC2
ICT
CICT
VC3
VSS
FET
CO
EB−
Figure 10
Table 11 Constants for External Components 3
Symbol
R1, R2
C1, C2
RVCC
Min.
0
Typ.
1 k
Max.
10 k
1
Unit
Ω
μF
Ω
μF
μF
0
0.1
100
0.1
0.1
0
1 k
1
CVCC
0
CICT
0
1
Caution1. The above constants may be changed without notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above
example of connection. In addition, the example of connection shown above and the constant do
not guarantee proper operation. Perform thorough evaluation using the actual application to set
the constant.
18
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
Rev.6.4_02
S-8244 Series
(4) Connection Example 4 (for 1-cell)
SC PROTECTOR
EB+
RVCC
VCC
SENSE
VC1
R1
CVCC
C1
BAT1
VC2
ICT
CICT
VC3
VSS
FET
CO
EB−
Figure 11
Table 12 Constants for External Components 4
Symbol
Min.
0
Typ.
1 k
Max.
10 k
1
Unit
Ω
μF
Ω
μF
μF
R1
C1
0
0.1
100
0.1
0.1
RVCC
CVCC
CICT
0
1 k
1
0
0
1
Caution1. The above constants may be changed without notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above
example of connection. In addition, the example of connection shown above and the constant do
not guarantee proper operation. Perform thorough evaluation using the actual application to set
the constant.
19
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
S-8244 Series
Rev.6.4_02
Precautions
• This IC charges the delay capacitor through the delay capacitor pin (ICT pin) immediately when the voltage of one of
batteries V1 to V4 reaches the overcharge voltage. Therefore, setting the resistor connected to the VCC pin to any
value greater than the recommended level causes a reduction in the IC power supply voltage because of charge
current of the delay capacitor. This may lead to a malfunction. Set up the resistor NOT to exceed the typical value.
If you change the resistance, please consult us.
• DO not connect any of overcharged batteries. Even if only one overcharged battery is connected to this IC, the IC
detects overcharge, then charge current flows to the delay capacitor through the parasitic diode between pins where
the battery is not connected yet. This may lead to a malfunction. Please perform sufficient evaluation in the case of
use. Depending on an application circuit, even when the fault charge battery is not contained, the connection turn of
a battery may be restricted in order to prevent the output of CO detection pulse at the time of battery connection.
CMOS output active “H” and Nch open drain output active “H” products
VCD
V1 battery
V2 battery
V3 battery
V4 battery
VCU
Battery voltage
VSS
VCC
CO pin voltage
CICT high
CICT low
VSS
CICT low
Setting voltage
ICT pin voltage
CICT high
VSS
Internal delay
Delay
• In this IC, the output logic of the CO pin is inverted after several milliseconds of internal delay if this IC is under the
overcharge condition even ICT pin is either “VSS−short circuit,” “VDD−short circuit” or “Open” status.
• Any position from V1 to V4 can be used when applying this IC for a one to three-cell battery. However, be sure to
short circuit between pins not in use (SENSE−VC1, VC1−VC2, VC2−VC3, or VC3−VSS).
• The application conditions for the input voltage, output voltage, and load current should not exceed the package
power dissipation.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• SII Semiconductor Corporation claims no responsibility for any and all disputes arising out of or in connection with any
infringement of the products including this IC upon patents owned by a third party.
20
BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK (SECONDARY PROTECTION)
Rev.6.4_02
S-8244 Series
Characteristics (Typical Data)
1. Detection Voltage vs. Temperature
Overcharge Detection Voltage vs. Temperature
Overcharge Release Voltage vs. Temperature
V
CU = 4.45 V
S-8244AAAFN
4.17
VCD = 0.38 V
S-8244AAAFN
4.55
4.07
4.45
3.97
4.35
0
20
Ta [°C]
40
60
80 100
0
20
Ta [°C]
40
60
80 100
−40 −20
−40 −20
2. Current Consumption vs. Temperature
Current Consumption during Normal Operation vs. Temperature
Current Consumption at Power Down vs. Temperature
S-8244AAAFN
3
VCC = 9.2 V
V
CC = 14.0 V
S-8244AAAFN
3
2
1
2
1
0
0
0
20
Ta [°C]
40
60
80
100
−40 −20
0
20
Ta [°C]
40
60
80
100
−40 −20
3. Delay Time vs. Temperature
Overcharge Detection Delay Time vs. Temperature
S-8244AAAFN
3
VCC = 15.2 V
2
1
0
0
20
40
60
80
100
−40 −20
Ta [°C]
Caution Please design all applications of the S-8244 Series with safety in mind.
21
1.97±0.03
6
5
8
7
+0.05
-0.02
0.08
1
2
3
4
0.5
0.48±0.02
0.2±0.05
No. PH008-A-P-SD-2.0
SNT-8A-A-PKG Dimensions
PH008-A-P-SD-2.0
TITLE
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
+0.1
-0
4.0±0.1
2.0±0.05
0.25±0.05
ø1.5
0.65±0.05
ø0.5±0.1
4.0±0.1
2.25±0.05
5°
4 3 2 1
5 6 7 8
Feed direction
No. PH008-A-C-SD-1.0
SNT-8A-A-Carrier Tape
PH008-A-C-SD-1.0
TITLE
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. PH008-A-R-SD-1.0
SNT-8A-A-Reel
TITLE
PH008-A-R-SD-1.0
No.
SCALE
UNIT
5,000
QTY.
mm
SII Semiconductor Corporation
0.52
2
2.01
0.52
1
0.2
0.3
1.
2.
(0.25 mm min. / 0.30 mm typ.)
(1.96 mm ~ 2.06 mm)
1.
2.
0.03 mm
3.
4.
SNT
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package (1.96 mm to 2.06mm).
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
(0.25 mm min. / 0.30 mm typ.)
(1.96 mm ~ 2.06 mm)
1.
2.
SNT-8A-A
-Land Recommendation
TITLE
No. PH008-A-L-SD-4.1
PH008-A-L-SD-4.1
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
2.95±0.2
8
5
1
4
0.13±0.1
0.2±0.1
0.65±0.1
No. FN008-A-P-SD-1.1
MSOP8-A-PKG Dimensions
FN008-A-P-SD-1.1
TITLE
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
2.0±0.05
4.0±0.1
1.35±0.15
4.0±0.1
1.55±0.05
1.05±0.05
0.3±0.05
3.1±0.15
1
8
4
5
Feed direction
No. FN008-A-C-SD-1.1
MSOP8-A-Carrier Tape
FN008-A-C-SD-1.1
TITLE
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
16.5max.
13.0±0.3
Enlarged drawing in the central part
(60°)
(60°)
No. FN008-A-R-SD-1.1
MSOP8-A-Reel
FN008-A-R-SD-1.1
TITLE
No.
SCALE
UNIT
QTY.
3,000
mm
SII Semiconductor Corporation
2.90±0.2
8
5
1
4
0.13±0.1
0.2±0.1
0.65±0.1
No. FM008-A-P-SD-1.1
TMSOP8-A-PKG Dimensions
FM008-A-P-SD-1.1
TITLE
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
2.00±0.05
4.00±0.1
1.00±0.1
4.00±0.1
+0.1
-0
1.5
1.05±0.05
0.30±0.05
3.25±0.05
1
8
4
5
Feed direction
No. FM008-A-C-SD-2.0
TMSOP8-A-Carrier Tape
FM008-A-C-SD-2.0
TITLE
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
16.5max.
13.0±0.3
Enlarged drawing in the central part
13±0.2
(60°)
(60°)
No. FM008-A-R-SD-1.0
TMSOP8-A-Reel
FM008-A-R-SD-1.0
TITLE
No.
SCALE
UNIT
QTY.
4,000
mm
SII Semiconductor Corporation
Disclaimers (Handling Precautions)
1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.
2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of
any specific mass-production design.
SII Semiconductor Corporation is not responsible for damages caused by the reasons other than the products or
infringement of third-party intellectual property rights and any other rights due to the use of the information described
herein.
3. SII Semiconductor Corporation is not responsible for damages caused by the incorrect information described herein.
4. Take care to use the products described herein within their specified ranges. Pay special attention to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
SII Semiconductor Corporation is not responsible for damages caused by failures and/or accidents, etc. that occur
due to the use of products outside their specified ranges.
5. When using the products described herein, confirm their applications, and the laws and regulations of the region or
country where they are used and verify suitability, safety and other factors for the intended use.
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weapons of mass destruction or military use. SII Semiconductor Corporation is not responsible for any provision
(export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons,
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8. The products described herein are not designed to be used as part of any device or equipment that may affect the
human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems,
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use or other uses. Do not use those products without the prior written permission of SII Semiconductor Corporation.
Especially, the products described herein cannot be used for life support devices, devices implanted in the human
body and devices that directly affect human life, etc.
Prior consultation with our sales office is required when considering the above uses.
SII Semiconductor Corporation is not responsible for damages caused by unauthorized or unspecified use of our
products.
9. Semiconductor products may fail or malfunction with some probability.
The user of these products should therefore take responsibility to give thorough consideration to safety design
including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing
injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction.
The entire system must be sufficiently evaluated and applied on customer's own responsibility.
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taken in the product design by the customer depending on the intended use.
11. The products described herein do not affect human health under normal use. However, they contain chemical
substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips
may be sharp. Take care when handling these with the bare hands to prevent injuries, etc.
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The information described herein does not convey any license under any intellectual property rights or any other
rights belonging to SII Semiconductor Corporation or a third party. Reproduction or copying of the information
described herein for the purpose of disclosing it to a third-party without the express permission of SII Semiconductor
Corporation is strictly prohibited.
14. For more details on the information described herein, contact our sales office.
1.0-2016.01
www.sii-ic.com
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