S-8424AAFFT-TB-G [SII]
BATTERY BACKUP SWITCHING IC;
| 型号： | S-8424AAFFT-TB-G |
| 厂家： | 
SEIKO INSTRUMENTS INC |
| 描述： | BATTERY BACKUP SWITCHING IC 开关 |
| 文件： | 总46页 (文件大小：2473K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S-8424A Series
BATTERY BACKUP SWITCHING IC
www.sii-ic.com
© SII Semiconductor Corporation, 2001-2010
Rev.3.0_01
The S-8424A Series is a CMOS IC designed for use in the switching circuits of primary and backup power supplies on
a single chip. It consists of two voltage regulators, three voltage detectors, a power supply switch and its controller, as
well as other functions.
In addition to the switching function between the primary and backup power supply, the S-8424A Series can provide
the micro controllers with three types of voltage detection output signals corresponding to the power supply voltage.
Moreover adopting a special sequence for switch control enables the effective use of the backup power supply,
making this IC ideal for configuring a backup system.
Features
• Low power consumption
Normal operation: 15 μA Max. (VIN = 6 V)
Backup:
2.1 μA Max.
• Voltage regulator
Output voltage tolerance : 2 %
Output voltage:
Independently selectable in 0.1 V steps in the range of 2.3 V to 5.4 V
• Three built-in voltage detectors (CS, PREEND , RESET )
Detection voltage precision: 2 %
Detection voltage:
Selectable in 0.1 V steps in the range of 2.4 V to 5.3 V (CS voltage detector)
Selectable in 0.1 V steps in the range of 1.7 V to 3.4 V (PREEND , RESET
voltage detector)
• Switching circuit for primary power supply and backup power supply configurable on one chip
• Efficient use of backup power supply possible
• Special sequence
Backup voltage is not output when the primary power supply voltage does not reach the initial voltage at which
the switch unit operates.
• Lead-free, Sn 100%, halogen-free*1
*1. Refer to “ Product Name Structure” for details.
Packages
• 8-Pin TSSOP
• 8-Pin SON(B)
Applications
• Video camera recorders
• Still video cameras
• Memory cards
• SRAM backup equipment
1
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
Product Name Structure
1. Product name
(1) 8-Pin TSSOP
S-8424A xx FT - TB - x
Environmental code
U: Lead-free (Sn 100%), halogen-free
G: Lead-free (for details, please contact our sales office)
IC direction in tape specification
Package code
FT: 8-Pin TSSOP
Serial code
(2) 8-Pin SON(B)
S-8424A xx PA - TF - G
Environmental code
G: Lead-free (for details, please contact our sales office)
IC direction in tape specification
Package code
PA: 8-Pin SON(B)
Serial code
2. Package
Drawing Code
Package Name
Package
Tape
Reel
Environmental code = G
Environmental code = U
FT008-A-P-SD
FT008-A-P-SD
PA008-B-P-SD
FT008-E-C-SD
FT008-E-C-SD
PA008-B-C-SD
FT008-E-R-SD
FT008-E-R-S1
PA008-B-R-SD
8-Pin TSSOP
8-Pin SON(B)
2
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
3. Product name list
Part No.
Package
Output
Voltage
(V)
CS Voltage
(V)
Switch Voltage
(V)
RESET
Voltage
(V)
PREEND
Voltage
(V)
Type
VRO
VOUT −VDET1 +VDET1 −VDET2 +VDET2 −VDET3
+VDET3
VSW1
+VDET1 × 0.85
S-8424AAAFT-TB-x
8-Pin TSSOP
3.000 3.000
3.300
3.401
2.200
2.312
2.600
2.748
S-8424AAAPA-TF-G 8-Pin SON(B)
+VDET1 × 0.77
+VDET1 × 0.85
+VDET1 × 0.77
+VDET1 × 0.77
+VDET1 × 0.77
+VDET1 × 0.77
+VDET1 × 0.77
+VDET1 × 0.77
+VDET1 × 0.77
S-8424AABFT-TB-x
S-8424AACFT-TB-x
S-8424AADFT-TB-x
S-8424AAEFT-TB-x
S-8424AAFFT-TB-x
S-8424AAGFT-TB-x
S-8424AAHFT-TB-x
S-8424AAJFT-TB-x
S-8424AAKFT-TB-x
8-Pin TSSOP
8-Pin TSSOP
8-Pin TSSOP
8-Pin TSSOP
8-Pin TSSOP
8-Pin TSSOP
8-Pin TSSOP
8-Pin TSSOP
8-Pin TSSOP
3.300 3.300
3.200 3.200
5.000 5.000
3.150 3.150
3.200 3.200
2.800 2.800
5.000 5.000
3.100 3.100
3.200 3.200
4.000
3.300
4.600
4.200
4.400
4.400
4.600
4.400
4.600
4.129
3.401
4.753
4.337
4.545
4.545
4.753
4.545
4.753
2.300
2.400
2.300
2.300
2.400
2.400
2.550
2.200
2.400
2.420
2.528
2.420
2.420
2.528
2.528
2.690
2.312
2.528
2.500
2.600
2.500
2.500
2.600
2.600
2.700
2.600
2.600
2.640
2.748
2.640
2.640
2.748
2.748
2.856
2.748
2.748
Caution Set the CS voltage so that the switch voltage (VSW1) is equal to or greater than the
RESET detection voltage (−VDET2).
Remark 1. The selection range is as follows.
VRO, VOUT: 2.3 to 5.4 V (0.1 V steps)
−VDET1
−VDET2
−VDET3
:
:
:
2.4 to 5.3 V (0.1 V steps)
1.7 to 3.4 V (0.1 V steps )
1.7 to 3.4 V (0.1 V steps)
+VDET1 × 0.85 or +VDET1 × 0.77
VSW1
:
2. If a product with a voltage other than above is required, contact our sales representative.
3. x: G or U
4. Please select products of environmental code = U for Sn 100%, halogen-free products.
3
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
Block Diagram
VOUT
M1
VIN
REG2
VBAT
PREEND
PREEND
Voltage
detector
VSW1
Detector
RESET
CS
Voltage
detector
VSW2
Detector
CS
RESET
Voltage
detector
Switch
controller
REG1
VRO
VSS
Figure 1 Block Diagram
4
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
Pin Configurations
Table 1
8-Pin TSSOP
Top View
Pin No.
Symbol
VSS
Description
Ground
VSS
1
2
VRO
VIN
1
2
8
7
PREEND
VBAT
CS
PREEND
VBAT*1
CS
Output pin of PREEND voltage detector
Backup power supply input pin
VOUT
3
4
6
5
3
4
5
RESET
Output pin of CS voltage detector
RESET
VOUT*2
VIN*3
Output pin of RESET voltage detector
Output pin of voltage regulator 2
Primary power supply input pin
6
7
8
Figure 2
VRO*4
Output pin of voltage regulator 1
*1 to *4. Mount capacitors between VSS (GND pin) and the VIN, VBAT,
VOUT, and VRO pins. (Refer to the “Standard Circuit”)
Table 2
8-Pin SON(B)
Top View
Pin No.
Symbol
VSS
Description
1
2
Ground
1
2
8 VRO
7 VIN
VSS
PREEND
VBAT
PREEND
VBAT*1
CS
Output pin of PREEND voltage detector
Backup power supply input pin
VOUT
3
4
6
5
3
4
5
RESET
CS
Output pin of CS voltage detector
RESET
VOUT*2
VIN*3
Output pin of RESET voltage detector
Output pin of voltage regulator 2
Primary power supply input pin
6
7
8
Figure 3
VRO*4
Output pin of voltage regulator 1
*1 to *4. Mount capacitors between VSS (GND pin) and the VIN, VBAT,
VOUT, and VRO pins. (Refer to the “Standard Circuit”)
5
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
Absolute Maximum Ratings
Table 3 Absolute Maximum Ratings
(Unless otherwise specified: Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Primary power supply input voltage
Backup power supply input voltage
Output voltage of voltage regulator
CS output voltage
VIN
V
VSS−0.3 to VSS+18
VBAT
VRO, VOUT
VCS
VSS−0.3 to VIN+0.3
VSS−0.3 to VSS+18
VRESET
RESET output voltage
PREEND output voltage
VPREEND
Power dissipation
8-Pin TSSOP
PD
300 (When not mounted on board)
mW
700*1
300 (When not mounted on board)
750*1
8-Pin SON(B)
Operating ambient temperature
Storage temperature
Topr
Tstg
−40 to +85
−40 to +125
°C
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Board name: JEDEC STANDARD51-7
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
(1) When mounted on board
(2) When not mounted on board
800
400
700
600
500
8-Pin SON(B)
300
200
100
0
8-Pin TSSOP
400
300
8-Pin TSSOP
8-Pin SON(B)
200
100
0
0
50
Ambient Temperature Ta (°C)
Figure 4 Power Dissipation of Package
100
150
0
50
100
150
Ambient Temperature Ta (°C)
6
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
Electrical Characteristics
1. S-8424AAAxx
Table 4 Electrical Characteristics
(Unless otherwise specified: Ta = 25°C)
Test
Circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Output voltage 1
Dropout voltage 1
Load stability 1
Input stability 1
VRO
VIN = 7.2 V, IRO = 3 mA
2.940
⎯
3.000
41
3.060
59
V
Vdrop1
ΔVRO1
VIN = 7.2 V, IRO = 3 mA
mV
mV
mV
VIN = 7.2 V, IRO = 0.1 to 10 mA
VIN = 4 to 16 V, IRO = 3 mA
⎯
50
100
20
ΔVRO2
ΔVRO
ΔTa • VRO
⎯
5
Output voltage temperature coefficient 1
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Output voltage 2
Dropout voltage 2
Load stability 2
Input stability 2
VOUT
Vdrop2
VIN = 7.2 V, IOUT = 23 mA
2.940
⎯
3.000
187
50
3.060
252
100
20
V
VIN = 7.2 V, IOUT = 23 mA
mV
mV
mV
ΔVOUT1
ΔVOUT2
VIN = 7.2 V, IOUT = 0.1 to 60 mA
VIN = 4 to 16 V, IOUT = 23 mA
⎯
⎯
5
ΔVOUT
ΔTa • VOUT
Output voltage temperature coefficient 2
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Primary power input voltage
CS detection voltage
VIN
⎯
VIN voltage detection
⎯
⎯
⎯
16
V
V
V
V
−VDET1
+VDET1
−VDET2
3.234
3.319
2.156
3.300
3.401
2.200
3.366
3.482
2.244
2
CS release voltage
RESET detection voltage
VOUT voltage detection
RESET release voltage
+VDET2
−VDET3
+VDET3
Vopr
⎯
VBAT voltage detection
⎯
2.256
2.548
2.682
1.7
2.312
2.600
2.748
−
2.367
2.652
2.814
16
V
V
V
V
PREEND detection voltage
PREEND release voltage
Operating voltage
VIN or VBAT
Δ − VDET1
ΔTa • −VDET1
Detection voltage temperature coefficient
Ta = −40°C to +85°C
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
Δ − VDET2
ΔTa • −VDET2
Δ − VDET3
ΔTa • −VDET3
Ta = −40°C to +85°C
⎯
100
⎯
⎯
ppm/°C
RESET
PREEND
CS
Sink current
ISINK
VDS = 0.5 V, VIN = VBAT = 2.0 V
1.50
2.30
mA
mA
mA
μA
3
1.50
1.50
⎯
2.30
2.30
⎯
⎯
⎯
Leakage current
Switch voltage
ILEAK
VSW1
VDS = 16 V, VIN = 16 V
0.1
+VDET1
× 0.83
VOUT
× 0.93
⎯
+VDET1
× 0.85
VOUT
× 0.95
⎯
+VDET1
× 0.87
VOUT
× 0.97
0.1
VBAT = 2.8 V, VIN voltage detection
V
V
4
5
CS output inhibit voltage
VSW2
ILEAK
VBAT = 3.0 V, VOUT voltage detection
VIN = 3.6 V, VBAT = 0 V
VBAT switch leakage current
VBAT switch resistance
μA
6
7
RSW
VIN = Open, VBAT = 3.0 V, IOUT = 10 to 500 μA
⎯
30
60
Ω
∆VSW1
Switch voltage temperature coefficient
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
4
∆Ta • VSW1
∆VSW2
CS output inhibit voltage temperature
coefficient
Ta = −40°C to +85°C
5
8
∆Ta • VSW2
Current consumption
ISS1
VIN = 3.6 V, VBAT = 3.0 V, Unload
⎯
⎯
7
0.26
1.0
⎯
15
0.50
2.1
μA
μA
μA
μA
V
IBAT1
IBAT2
VIN = Open, VBAT = 3.0 V, Unload
Ta = 25°C
Ta = 85°C
⎯
⎯
3.5
Backup power supply input voltage
VBAT
⎯
1.7
⎯
4.0
7
Remark The number in the Test Circuit column corresponds to the circuit number in the “Test Circuit”section.
7
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
2. S-8424AABxx
Table 5 Electrical Characteristics
(Unless otherwise specified: Ta = 25°C)
Test
Circuit
1
Parameter
Output voltage 1
Symbol
Conditions
Min.
Typ.
Max.
Unit
VRO
VIN = 6 V, IRO = 30 mA
3.234
⎯
3.300
356
50
3.366
474
100
20
V
Dropout voltage 1
Load stability 1
Input stability 1
Vdrop1
ΔVRO1
VIN = 6 V, IRO = 30 mA
mV
mV
mV
VIN = 6 V, IRO = 0.1 to 40 mA
VIN = 6 to 16 V, IRO = 30 mA
⎯
ΔVRO2
ΔVRO
ΔTa • VRO
⎯
5
Output voltage temperature coefficient 1
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Output voltage 2
Dropout voltage 2
Load stability 2
Input stability 2
VOUT
Vdrop2
VIN = 6 V, IOUT = 50 mA
3.234
⎯
3.300
401
50
3.366
540
100
20
V
VIN = 6 V, IOUT = 50 mA
mV
mV
mV
ΔVOUT1
ΔVOUT2
VIN = 6 V, IOUT = 0.1 to 60 mA
VIN = 6 to 16 V, IOUT = 50 mA
⎯
⎯
5
ΔVOUT
ΔTa • VOUT
Output voltage temperature coefficient 2
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Primary power input voltage
CS detection voltage
VIN
⎯
VIN voltage detection
⎯
⎯
⎯
16
V
V
V
V
−VDET1
+VDET1
−VDET2
3.920
4.030
2.254
4.000
4.129
2.300
4.080
4.228
2.346
2
CS release voltage
RESET detection voltage
VOUT voltage detection
RESET release voltage
+VDET2
−VDET3
+VDET3
Vopr
⎯
VBAT voltage detection
⎯
2.362
2.450
2.576
1.7
2.420
2.500
2.640
⎯
2.478
2.550
2.703
16
V
V
V
V
PREEND detection voltage
PREEND release voltage
Operating voltage
VIN or VBAT
Δ − VDET1
ΔTa • −VDET1
Detection voltage temperature coefficient
Ta = −40°C to +85°C
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
Δ − VDET2
ΔTa • −VDET2
Δ − VDET3
ΔTa • −VDET3
Ta = −40°C to +85°C
⎯
100
⎯
⎯
ppm/°C
RESET
PREEND
CS
Sink current
ISINK
VDS = 0.5 V, VIN = VBAT = 2.0 V
1.50
2.30
mA
mA
mA
μA
3
1.50
1.50
⎯
2.30
2.30
⎯
⎯
⎯
Leakage current
Switch voltage
ILEAK
VSW1
VDS = 16 V, VIN = 16 V
0.1
+VDET1
× 0.75
VOUT
× 0.93
⎯
+VDET1
× 0.77
VOUT
× 0.95
⎯
+VDET1
× 0.79
VOUT
× 0.97
0.1
VBAT = 2.8 V, VIN voltage detection
V
V
4
5
VBAT = 3.0 V
CS output inhibit voltage
VSW2
ILEAK
VOUT voltage detection
VIN = 6V, VBAT = 0 V
VBAT switch leakage current
VBAT switch resistance
μA
6
7
RSW
VIN = Open, VBAT = 3.0 V, IOUT = 10 to 500 μA
⎯
30
60
Ω
∆VSW1
Switch voltage temperature coefficient
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
4
∆Ta • VSW1
∆VSW2
CS output inhibit voltage temperature
coefficient
Ta = −40°C to +85°C
5
8
∆Ta • VSW2
Current consumption
ISS1
VIN = 6 V, VBAT = 3.0 V, Unload
⎯
⎯
7
0.26
1.0
⎯
15
0.50
2.1
μA
μA
μA
μA
V
IBAT1
IBAT2
VIN = Open, VBAT = 3.0 V, Unload
Ta = 25°C
Ta = 85°C
⎯
⎯
3.5
Backup power supply input voltage
VBAT
⎯
1.7
⎯
4.0
7
Remark The number in the Test Circuit column corresponds to the circuit number in the “Test Circuit” section.
8
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
3. S-8424AACxx
Table 6 Electrical Characteristics
(Unless otherwise specified: Ta = 25°C)
Test
Circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Output voltage 1
Dropout voltage 1
Load stability 1
Input stability 1
VRO
VIN = 3.6 V, IRO = 15 mA
3.136
⎯
3.200
181
50
3.264
243
100
20
V
Vdrop1
ΔVRO1
VIN = 3.6 V, IRO = 15 mA
mV
mV
mV
VIN = 3.6 V, IRO = 0.1 to 20 mA
VIN = 3.6 to 16 V, IRO = 15 mA
⎯
ΔVRO2
ΔVRO
ΔTa • VRO
⎯
5
Output voltage temperature coefficient 1
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Output voltage 2
Dropout voltage 2
Load stability 2
Input stability 2
VOUT
Vdrop2
VIN = 3.6 V, IOUT = 15mA
3.136
⎯
3.200
123
50
3.264
167
100
20
V
VIN = 3.6 V, IOUT = 15 mA
mV
mV
mV
ΔVOUT1
ΔVOUT2
VIN = 3.6 V, IOUT = 0.1 to 20 mA
VIN = 3.6 to 16 V, IOUT = 15 mA
⎯
⎯
5
ΔVOUT
ΔTa • VOUT
Output voltage temperature coefficient 2
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Primary power input voltage
CS detection voltage
VIN
⎯
VIN voltage detection
⎯
⎯
⎯
16
V
V
V
V
−VDET1
+VDET1
−VDET2
3.234
3.319
2.352
3.300
3.401
2.400
3.366
3.482
2.448
2
CS release voltage
RESET detection voltage
VOUT voltage detection
RESET release voltage
+VDET2
−VDET3
+VDET3
Vopr
⎯
VBAT voltage detection
⎯
2.467
2.548
2.682
1.7
2.528
2.600
2.748
⎯
2.589
2.652
2.814
16
V
V
V
V
PREEND detection voltage
PREEND release voltage
Operating voltage
VIN or VBAT
Δ − VDET1
ΔTa • −VDET1
Detection voltage temperature coefficient
Ta = −40°C to +85°C
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
Δ − VDET2
ΔTa • −VDET2
Δ − VDET3
ΔTa • −VDET3
Ta = −40°C to +85°C
⎯
100
⎯
⎯
ppm/°C
RESET
PREEND
CS
Sink current
ISINK
VDS = 0.5 V, VIN = VBAT = 2.0 V
1.50
2.30
mA
mA
mA
μA
V
3
1.50
1.50
⎯
2.30
2.30
⎯
⎯
⎯
Leakage current
Switch voltage
ILEAK
VSW1
VDS = 16 V, VIN = 16 V
0.1
+VDET1
× 0.83
VOUT
× 0.93
⎯
+VDET1
× 0.85
VOUT
× 0.95
⎯
+VDET1
× 0.87
VOUT
× 0.97
0.1
4
5
VBAT = 2.8 V, VIN voltage detection
V
CS output inhibit voltage
VSW2
ILEAK
VBAT = 3.0 V, VOUT voltage detection
VIN = 3.6 V, VBAT = 0 V
VBAT switch leakage current
VBAT switch resistance
μA
Ω
6
7
4
RSW
VIN = Open, VBAT = 3.0 V, IOUT = 10 to 500 μA
⎯
30
60
∆VSW1
⎯
100
⎯
ppm/°C
Switch voltage temperature coefficient
Ta = −40°C to +85°C
∆Ta • VSW1
∆VSW2
CS output inhibit voltage temperature
⎯
100
⎯
ppm/°C
5
8
Ta = −40°C to +85°C
∆Ta • VSW2
coefficient
Current consumption
ISS1
VIN = 3.6 V, VBAT = 3.0 V, Unload
⎯
⎯
7
0.26
1.0
⎯
15
0.50
2.1
μA
μA
μA
μA
V
IBAT1
IBAT2
VIN = Open, VBAT = 3.0 V, Unload
Ta = 25°C
Ta = 85°C
⎯
⎯
3.5
Backup power supply input voltage
VBAT
⎯
1.7
⎯
4.0
7
Remark The number in the Test Circuit column corresponds to the circuit number in the “Test Circuit” section.
9
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
4. S-8424AADxx
Table 7 Electrical Characteristics
(Unless otherwise specified: Ta = 25°C)
Test
Circuit
1
Parameter
Output voltage 1
Symbol
Conditions
Min.
Typ.
Max.
Unit
VRO
VIN = 6 V, IRO = 30 mA
4.900
⎯
5.000
356
50
5.100
474
100
20
V
Dropout voltage 1
Load stability 1
Input stability 1
Vdrop1
ΔVRO1
VIN = 6 V, IRO = 30 mA
mV
mV
mV
VIN = 6 V, IRO = 0.1 to 40 mA
VIN = 6 to 16 V, IRO = 30 mA
⎯
ΔVRO2
ΔVRO
ΔTa • VRO
⎯
5
Output voltage temperature coefficient 1
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Output voltage 2
Dropout voltage 2
Load stability 2
Input stability 2
VOUT
Vdrop2
VIN = 6 V, IOUT = 50 mA
4.900
⎯
5.000
401
50
5.100
540
100
20
V
VIN = 6 V, IOUT = 50 mA
mV
mV
mV
ΔVOUT1
ΔVOUT2
VIN = 6 V, IOUT = 0.1 to 60 mA
VIN = 6 to 16 V, IOUT = 50 mA
⎯
⎯
5
ΔVOUT
ΔTa • VOUT
Output voltage temperature coefficient 2
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Primary power input voltage
CS detection voltage
VIN
⎯
VIN voltage detection
⎯
⎯
⎯
16
V
V
V
V
−VDET1
+VDET1
−VDET2
4.508
4.639
2.254
4.600
4.753
2.300
4.692
4.867
2.346
2
CS release voltage
RESET detection voltage
VOUT voltage detection
RESET release voltage
+VDET2
−VDET3
+VDET3
Vopr
⎯
VBAT voltage detection
⎯
2.362
2.450
2.576
1.7
2.420
2.500
2.640
⎯
2.478
2.550
2.703
16
V
V
V
V
PREEND detection voltage
PREEND release voltage
Operating voltage
VIN or VBAT
Δ − VDET1
ΔTa • −VDET1
Detection voltage temperature coefficient
Ta = −40°C to +85°C
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
Δ − VDET2
ΔTa • −VDET2
Δ − VDET3
ΔTa • −VDET3
Ta = −40°C to +85°C
⎯
100
⎯
⎯
ppm/°C
RESET
PREEND
CS
Sink current
ISINK
VDS = 0.5 V, VIN = VBAT = 2.0 V
1.50
2.30
mA
mA
mA
μA
3
1.50
1.50
⎯
2.30
2.30
⎯
⎯
⎯
Leakage current
Switch voltage
ILEAK
VSW1
VDS = 16 V, VIN = 16 V
0.1
+VDET1
× 0.75
VOUT
× 0.93
⎯
+VDET1
× 0.77
VOUT
× 0.95
⎯
+VDET1
× 0.79
VOUT
× 0.97
0.1
VBAT = 2.8 V, VIN voltage detection
V
V
4
5
CS output inhibit voltage
VSW2
ILEAK
VBAT = 3.0 V, VOUT voltage detection
VIN = 6 V, VBAT = 0 V
VBAT switch leakage current
VBAT switch resistance
μA
6
7
RSW
VIN = Open, VBAT = 3.0 V, IOUT = 10 to 500 μA
⎯
30
60
Ω
∆VSW1
Switch voltage temperature coefficient
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
4
∆Ta • VSW1
∆VSW2
CS output inhibit voltage temperature
coefficient
Ta = −40°C to +85°C
5
8
∆Ta • VSW2
VIN = 6 V, VBAT = 3.0 V, Unload
Current consumption
ISS1
⎯
⎯
7
0.26
1.0
⎯
15
0.50
2.1
μA
μA
μA
μA
V
IBAT1
IBAT2
VIN = Open, VBAT = 3.0 V, Unload
Ta = 25°C
Ta = 85°C
⎯
⎯
3.5
Backup power supply input voltage
VBAT
⎯
1.7
⎯
4.0
7
Remark The number in the Test Circuit column corresponds to the circuit number in the “Test Circuit” section.
10
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
5. S-8424AAExx
Table 8 Electrical Characteristics
(Unless otherwise specified: Ta = 25°C)
Test
Circuit
1
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Output voltage 1
Dropout voltage 1
Load stability 1
Input stability 1
VRO
VIN = 6 V, IRO = 30 mA
3.087
⎯
3.150
356
50
3.213
474
100
20
V
Vdrop1
ΔVRO1
VIN = 6 V, IRO = 30 mA
mV
mV
mV
VIN = 6 V, IRO = 0.1 to 30 mA
VIN = 6 to 16 V, IRO = 30 mA
⎯
ΔVRO2
ΔVRO
ΔTa • VRO
⎯
5
Output voltage temperature coefficient 1
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Output voltage 2
Dropout voltage 2
Load stability 2
Input stability 2
VOUT
Vdrop2
VIN = 6 V, IOUT = 50 mA
3.087
⎯
3.150
401
50
3.213
540
100
20
V
VIN = 6 V, IOUT = 50 mA
mV
mV
mV
ΔVOUT1
ΔVOUT2
VIN = 6 V, IOUT = 0.1 to 60 mA
VIN = 6 to 16 V, IOUT = 50 mA
⎯
⎯
5
ΔVOUT
ΔTa • VOUT
Output voltage temperature coefficient 2
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Primary power input voltage
CS detection voltage
VIN
⎯
VIN voltage detection
⎯
⎯
⎯
16
V
V
V
V
−VDET1
+VDET1
−VDET2
4.116
4.233
2.254
4.200
4.337
2.300
4.284
4.441
2.346
2
CS release voltage
RESET detection voltage
VOUT voltage detection
RESET release voltage
+VDET2
−VDET3
+VDET3
Vopr
⎯
VBAT voltage detection
⎯
2.362
2.450
2.576
1.7
2.420
2.500
2.640
⎯
2.478
2.550
2.703
16
V
V
V
V
PREEND detection voltage
PREEND release voltage
Operating voltage
VIN or VBAT
Δ − VDET1
ΔTa • −VDET1
Detection voltage temperature coefficient
Ta = −40°C to +85°C
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
Δ − VDET2
ΔTa • −VDET2
Δ − VDET3
ΔTa • −VDET3
Ta = −40°C to +85°C
⎯
100
⎯
⎯
ppm/°C
RESET
PREEND
CS
Sink current
ISINK
VDS = 0.5 V, VIN = VBAT = 2.0 V
1.50
2.30
mA
mA
mA
μA
3
1.50
1.50
⎯
2.30
2.30
⎯
⎯
⎯
Leakage current
Switch voltage
ILEAK
VSW1
VDS = 16 V, VIN = 16 V
0.1
+VDET1
× 0.75
VOUT
× 0.93
⎯
+VDET1
× 0.77
VOUT
× 0.95
⎯
+VDET1
× 0.79
VOUT
× 0.97
0.1
VBAT = 2.8 V, VIN voltage detection
V
V
4
5
CS output inhibit voltage
VSW2
ILEAK
VBAT = 3.0 V, VOUT voltage detection
VIN = 6 V, VBAT = 0 V
VBAT switch leakage current
VBAT switch resistance
μA
6
7
RSW
VIN = Open, VBAT = 3.0 V, IOUT = 10 to 500 μA
⎯
30
60
Ω
∆VSW1
Switch voltage temperature coefficient
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
4
∆Ta • VSW1
∆VSW2
CS output inhibit voltage temperature
coefficient
Ta = −40°C to +85°C
5
8
∆Ta • VSW2
VIN = 6 V, VBAT = 3.0 V, Unload
Current consumption
ISS1
⎯
⎯
7
0.26
1.0
⎯
15
0.50
2.1
μA
μA
μA
μA
V
IBAT1
IBAT2
VIN = Open, VBAT = 3.0 V, Unload
Ta = 25°C
Ta = 85°C
⎯
⎯
3.5
Backup power supply input voltage
VBAT
⎯
1.7
⎯
4.0
7
Remark The number in the Test Circuit column corresponds to the circuit number in the “Test Circuit” section.
11
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
6. S-8424AAFxx
Table 9 Electrical Characteristics
(Unless otherwise specified: Ta = 25°C)
Test
Parameter
Output voltage 1
Symbol
Conditions
VIN = 6 V, IRO = 30 mA
Min.
Typ.
Max.
Unit
Circuit
1
VRO
3.136
⎯
3.200
356
50
3.264
474
100
20
V
Dropout voltage 1
Load stability 1
Input stability 1
Vdrop1
ΔVRO1
VIN = 6 V, IRO = 30 mA
mV
mV
mV
VIN = 6 V, IRO = 0.1 to 30 mA
VIN = 6 to 16 V, IRO = 30 mA
⎯
ΔVRO2
ΔVRO
ΔTa • VRO
⎯
5
Output voltage temperature coefficient 1
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Output voltage 2
Dropout voltage 2
Load stability 2
Input stability 2
VOUT
Vdrop2
VIN = 6 V, IOUT = 50 mA
3.136
⎯
3.200
401
50
3.264
540
100
20
V
VIN = 6 V, IOUT = 50 mA
mV
mV
mV
ΔVOUT1
ΔVOUT2
VIN = 6 V, IOUT = 0.1 to 50 mA
VIN = 6 to 16 V, IOUT = 50 mA
⎯
⎯
5
ΔVOUT
ΔTa • VOUT
Output voltage temperature coefficient 2
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Primary power input voltage
CS detection voltage
VIN
⎯
VIN voltage detection
⎯
⎯
⎯
16
V
V
V
V
−VDET1
+VDET1
−VDET2
4.312
4.436
2.352
4.400
4.545
2.400
4.488
4.654
2.448
2
CS release voltage
RESET detection voltage
VOUT voltage detection
RESET release voltage
+VDET2
−VDET3
+VDET3
Vopr
⎯
VBAT voltage detection
⎯
2.467
2.548
2.682
1.7
2.528
2.600
2.748
⎯
2.589
2.652
2.814
16
V
V
V
V
PREEND detection voltage
PREEND release voltage
Operating voltage
VIN or VBAT
Δ − VDET1
ΔTa • −VDET1
Detection voltage temperature coefficient
Ta = −40°C to +85°C
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
Δ − VDET2
ΔTa • −VDET2
Δ − VDET3
ΔTa • −VDET3
Ta = −40°C to +85°C
⎯
100
⎯
⎯
ppm/°C
VDS = 0.5 V, VIN = VBAT = 2.0 V
RESET
PREEND
CS
Sink current
ISINK
1.50
2.30
mA
mA
mA
μA
3
1.50
1.50
⎯
2.30
2.30
⎯
⎯
⎯
Leakage current
Switch voltage
ILEAK
VSW1
VDS = 16 V, VIN = 16 V
0.1
+VDET1
× 0.75
VOUT
× 0.93
⎯
+VDET1
× 0.77
VOUT
× 0.95
⎯
+VDET1
× 0.79
VOUT
× 0.97
0.1
VBAT = 2.8 V, VIN voltage detection
V
V
4
5
CS output inhibit voltage
VSW2
ILEAK
VBAT = 3.0 V, VOUT voltage detection
VIN = 6 V, VBAT = 0 V
VBAT switch leakage current
VBAT switch resistance
μA
6
7
RSW
VIN = Open, VBAT = 3.0 V, IOUT = 10 to 500 μA
⎯
30
60
Ω
∆VSW1
Switch voltage temperature coefficient
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
4
∆Ta • VSW1
∆VSW2
CS output inhibit voltage temperature
coefficient
Ta = −40°C to +85°C
5
8
∆Ta • VSW2
Current consumption
ISS1
IBAT1
IBAT2
VIN = 6 V, VBAT = 3.0 V, Unload
⎯
⎯
7
0.26
1.0
⎯
15
0.50
2.1
μA
μA
μA
μA
V
VIN = Open, VBAT = 3.0 V, Unload
Ta = 25°C
Ta = 85°C
⎯
⎯
3.5
Backup power supply input voltage
VBAT
⎯
1.7
⎯
4.0
7
Remark The number in the Test Circuit column corresponds to the circuit number in the “Test Circuit” section.
12
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
7. S-8424AAGxx
Table 10 Electrical Characteristics
(Unless otherwise specified: Ta = 25°C)
Test
Parameter
Symbol
Conditions
VIN = 6 V, IRO = 30 mA
Min.
Typ.
Max.
Unit
Circuit
1
Output voltage 1
Dropout voltage 1
Load stability 1
Input stability 1
VRO
2.744
⎯
2.800
356
50
2.856
474
100
20
V
Vdrop1
ΔVRO1
VIN = 6 V, IRO = 30 mA
mV
mV
mV
VIN = 6 V, IRO = 0.1 to 30 mA
VIN = 6 to 16 V, IRO = 30 mA
⎯
ΔVRO2
ΔVRO
ΔTa • VRO
⎯
5
Output voltage temperature coefficient 1
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Output voltage 2
Dropout voltage 2
Load stability 2
Input stability 2
VOUT
Vdrop2
VIN = 6 V, IOUT = 50 mA
2.744
⎯
2.800
401
50
2.856
540
100
20
V
VIN = 6 V, IOUT = 50 mA
mV
mV
mV
ΔVOUT1
ΔVOUT2
VIN = 6 V, IOUT = 0.1 to 50 mA
VIN = 6 to 16 V, IOUT = 50 mA
⎯
⎯
5
ΔVOUT
ΔTa • VOUT
Output voltage temperature coefficient 2
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Primary power input voltage
CS detection voltage
CS release voltage
VIN
⎯
⎯
⎯
16
V
V
V
V
V
V
V
V
−VDET1
+VDET1
−VDET2
+VDET2
−VDET3
+VDET3
Vopr
VIN voltage detection
4.312
4.436
2.352
2.467
2.548
2.682
1.7
4.400
4.545
2.400
2.528
2.600
2.748
⎯
4.488
4.654
2.448
2.589
2.652
2.814
16
2
detection voltage
VOUT voltage detection
VBAT voltage detection
RESET release voltage
PREEND detection voltage
PREEND release voltage
Operating voltage
VIN or VBAT
Δ − VDET1
ΔTa • −VDET1
Detection voltage temperature coefficient
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
Δ − VDET2
ΔTa • −VDET2
Ta = −40°C to +85°C
Δ − VDET3
ΔTa • −VDET3
Ta = −40°C to +85°C
⎯
100
⎯
⎯
ppm/°C
VDS = 0.5 V, VIN = VBAT = 2.0 V
RESET
PREEND
CS
Sink current
ISINK
1.50
2.30
mA
mA
mA
μA
3
1.50
1.50
⎯
2.30
2.30
⎯
⎯
⎯
Leakage current
Switch voltage
ILEAK
VSW1
VDS = 16 V, VIN = 16 V
0.1
+VDET1
× 0.75
VOUT
× 0.93
⎯
+VDET1
× 0.77
VOUT
× 0.95
⎯
+VDET1
× 0.79
VOUT
× 0.97
0.1
VBAT = 2.8 V, VIN voltage detection
V
V
4
5
CS output inhibit voltage
VSW2
ILEAK
VBAT = 3.0 V, VOUT voltage detection
VIN = 6 V, VBAT = 0 V
VBAT switch leakage current
VBAT switch resistance
μA
6
7
RSW
VIN = Open, VBAT = 3.0 V, IOUT = 10 to 500 μA
⎯
30
60
Ω
∆VSW1
Switch voltage temperature coefficient
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
4
∆Ta • VSW1
∆VSW2
CS output inhibit voltage temperature
coefficient
Ta = −40°C to +85°C
5
8
∆Ta • VSW2
Current consumption
ISS1
VIN = 6 V, VBAT = 3.0 V, Unload
⎯
⎯
7
15
μA
μA
IBAT1
0.26
0.50
IBAT2
VIN = Open, VBAT = 3.0 V, Unload
Ta = 25°C
Ta = 85°C
⎯
1.0
2.1
μA
⎯
⎯
⎯
3.5
4.0
μA
Backup power supply input voltage
VBAT
⎯
1.7
V
7
Remark The number in the Test Circuit column corresponds to the circuit number in the “Test Circuit” section.
13
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
8. S-8424AAHxx
Table 11 Electrical Characteristics
(Unless otherwise specified: Ta = 25°C)
Test
Parameter
Output voltage 1
Symbol
Conditions
VIN = 6 V, IRO = 30 mA
Min.
Typ.
Max.
Unit
Circuit
1
VRO
4.900
⎯
5.000
356
50
5.100
474
100
20
V
Dropout voltage 1
Load stability 1
Input stability 1
Vdrop1
ΔVRO1
VIN = 6 V, IRO = 30 mA
mV
mV
mV
VIN = 6 V, IRO = 0.1 to 40 mA
VIN = 6 to 16 V, IRO = 30 mA
⎯
ΔVRO2
ΔVRO
ΔTa • VRO
⎯
5
Output voltage temperature coefficient 1
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Output voltage 2
Dropout voltage 2
Load stability 2
Input stability 2
VOUT
Vdrop2
VIN = 6 V, IOUT = 50 mA
4.900
⎯
5.000
401
50
5.100
540
100
20
V
VIN = 6 V, IOUT = 50 mA
mV
mV
mV
ΔVOUT1
ΔVOUT2
VIN = 6 V, IOUT = 0.1 to 60 mA
VIN = 6 to 16 V, IOUT = 50 mA
⎯
⎯
5
ΔVOUT
ΔTa • VOUT
Output voltage temperature coefficient 2
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Primary power input voltage
CS detection voltage
CS release voltage
VIN
⎯
⎯
⎯
16
V
V
V
V
V
V
V
V
−VDET1
+VDET1
−VDET2
+VDET2
−VDET3
+VDET3
Vopr
VIN voltage detection
4.508
4.639
2.499
2.625
2.646
2.787
1.7
4.600
4.753
2.550
2.690
2.700
2.856
⎯
4.692
4.867
2.601
2.754
2.754
2.924
16
2
detection voltage
VOUT voltage detection
VBAT voltage detection
RESET release voltage
PREEND detection voltage
PREEND release voltage
Operating voltage
VIN or VBAT
Δ − VDET1
ΔTa • −VDET1
Detection voltage temperature coefficient
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
Δ − VDET2
ΔTa • −VDET2
Ta = −40°C to +85°C
Δ − VDET3
ΔTa • −VDET3
Ta = −40°C to +85°C
⎯
100
⎯
⎯
ppm/°C
VDS = 0.5 V, VIN = VBAT = 2.0 V
RESET
PREEND
CS
Sink current
ISINK
1.50
2.30
mA
mA
mA
μA
3
1.50
1.50
⎯
2.30
2.30
⎯
⎯
⎯
Leakage current
Switch voltage
ILEAK
VSW1
VDS = 16 V, VIN = 16 V
0.1
+VDET1
× 0.75
VOUT
× 0.93
⎯
+VDET1
× 0.77
VOUT
× 0.95
⎯
+VDET1
× 0.79
VOUT
× 0.97
0.1
VBAT = 2.8 V, VIN voltage detection
V
V
4
5
CS output inhibit voltage
VSW2
ILEAK
VBAT = 3.0 V, VOUT voltage detection
VIN = 6 V, VBAT = 0 V
VBAT switch leakage current
VBAT switch resistance
μA
6
7
RSW
VIN = Open, VBAT = 3.0 V, IOUT = 10 to 500 μA
⎯
30
60
Ω
∆VSW1
Switch voltage temperature coefficient
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
4
∆Ta • VSW1
∆VSW2
CS output inhibit voltage temperature
coefficient
Ta = −40°C to +85°C
5
8
∆Ta • VSW2
Current consumption
ISS1
VIN = 6 V, VBAT = 3.0 V, Unload
⎯
⎯
7
15
μA
μA
IBAT1
0.26
0.50
IBAT2
VIN = Open, VBAT = 3.0 V, Unload
Ta = 25°C
Ta = 85°C
⎯
1.0
2.1
μA
⎯
⎯
⎯
3.5
4.0
μA
Backup power supply input voltage
VBAT
⎯
1.7
V
7
Remark The number in the Test Circuit column corresponds to the circuit number in the “Test Circuit” section.
14
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
9. S-8424AAJFxx
Table 12 Electrical Characteristics
(Unless otherwise specified: Ta = 25°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
Circuit
1
Output voltage 1
Dropout voltage 1
Load stability 1
Input stability 1
VRO
VIN = 6 V, IRO = 10 mA
3.038
⎯
3.100
123
50
3.162
167
100
20
V
Vdrop1
ΔVRO1
VIN = 6 V, IRO = 10 mA
mV
mV
mV
VIN = 6 V, IRO = 0.1 to 15 mA
VIN = 6 to 16 V, IRO = 10 mA
⎯
ΔVRO2
ΔVRO
ΔTa • VRO
⎯
5
Output voltage temperature coefficient 1
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Output voltage 2
Dropout voltage 2
Load stability 2
Input stability 2
VOUT
Vdrop2
VIN = 6 V, IOUT = 50 mA
3.038
⎯
3.100
401
50
3.162
540
100
20
V
VIN = 6 V, IOUT = 50 mA
mV
mV
mV
ΔVOUT1
ΔVOUT2
VIN = 6 V, IOUT = 0.1 to 60 mA
VIN = 6 to 16 V, IOUT = 50 mA
⎯
⎯
5
ΔVOUT
ΔTa • VOUT
Output voltage temperature coefficient 2
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Primary power input voltage
CS detection voltage
VIN
⎯
VIN voltage detection
⎯
⎯
⎯
16
V
V
V
V
−VDET1
+VDET1
−VDET2
4.312
4.436
2.156
4.400
4.545
2.200
4.488
4.654
2.244
2
CS release voltage
RESET detection voltage
VOUT voltage detection
RESET release voltage
+VDET2
−VDET3
+VDET3
Vopr
⎯
VBAT voltage detection
⎯
2.256
2.548
2.682
1.7
2.312
2.600
2.748
⎯
2.367
2.652
2.814
16
V
V
V
V
PREEND detection voltage
PREEND release voltage
Operating voltage
VIN or VBAT
Δ − VDET1
ΔTa • −VDET1
Detection voltage temperature coefficient
Ta = −40°C to +85°C
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
Δ − VDET2
ΔTa • −VDET2
Δ − VDET3
ΔTa • −VDET3
Ta = −40°C to +85°C
⎯
100
⎯
⎯
ppm/°C
RESET
PREEND
CS
Sink current
ISINK
VDS = 0.5 V, VIN = VBAT = 2.0 V
1.50
2.30
mA
mA
mA
μA
3
1.50
1.50
⎯
2.30
2.30
⎯
⎯
⎯
Leakage current
Switch voltage
ILEAK
VSW1
VDS = 16 V, VIN = 16 V
0.1
+VDET1
× 0.75
VOUT
× 0.93
⎯
+VDET1
× 0.77
VOUT
× 0.95
⎯
+VDET1
× 0.79
VOUT
× 0.97
0.1
VBAT = 2.8 V, VIN voltage detection
V
V
4
5
CS output inhibit voltage
VSW2
ILEAK
VBAT = 3.0 V, VOUT voltage detection
VIN = 6 V, VBAT = 0 V
VBAT switch leakage current
VBAT switch resistance
μA
6
7
RSW
VIN = Open, VBAT = 3.0 V, IOUT = 10 to 500 μA
⎯
30
60
Ω
∆VSW1
Switch voltage temperature coefficient
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
4
∆Ta • VSW1
∆VSW2
CS output inhibit voltage temperature
Ta = −40°C to +85°C
5
8
∆Ta • VSW2
coefficient
Current consumption
ISS1
IBAT1
IBAT2
VIN = 6 V, VBAT = 3.0 V, Unload
⎯
⎯
7
0.26
1.0
⎯
15
0.50
2.1
3.5
4.0
μA
μA
μA
μA
V
VIN = Open, VBAT = 3.0 V, Unload
Ta = 25°C
Ta = 85°C
⎯
⎯
Backup power supply input voltage
VBAT
⎯
1.7
⎯
7
Remark The number in the Test Circuit column corresponds to the circuit number in the “Test Circuit” section.
15
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
10. S-8424AAKxx
Table 13 Electrical Characteristics
(Unless otherwise specified: Ta = 25°C)
Test
Parameter
Output voltage 1
Symbol
Conditions
VIN = 6 V, IRO = 10 mA
Min.
Typ.
Max.
Unit
Circuit
1
VRO
3.136
⎯
3.200
123
50
3.264
167
100
20
V
Dropout voltage 1
Load stability 1
Input stability 1
Vdrop1
ΔVRO1
VIN = 6 V, IRO = 10 mA
mV
mV
mV
VIN = 6 V, IRO = 0.1 to 15 mA
VIN = 6 to 16 V, IRO = 10 mA
⎯
ΔVRO2
ΔVRO
ΔTa • VRO
⎯
5
Output voltage temperature coefficient 1
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Output voltage 2
Dropout voltage 2
Load stability 2
Input stability 2
VOUT
Vdrop2
VIN = 6 V, IOUT = 50 mA
3.136
⎯
3.200
401
50
3.264
540
100
20
V
VIN = 6 V, IOUT = 50 mA
mV
mV
mV
ΔVOUT1
ΔVOUT2
VIN = 6 V, IOUT = 0.1 to 60 mA
VIN = 6 to 16 V, IOUT = 50 mA
⎯
⎯
5
ΔVOUT
ΔTa • VOUT
Output voltage temperature coefficient 2
Ta = −40°C to +85°C
⎯
100
⎯
ppm/°C
Primary power input voltage
CS detection voltage
VIN
⎯
VIN voltage detection
⎯
⎯
⎯
16
V
V
V
V
−VDET1
+VDET1
−VDET2
4.508
4.639
2.352
4.600
4.753
2.400
4.692
4.867
2.448
2
CS release voltage
RESET detection voltage
VOUT voltage detection
RESET release voltage
+VDET2
−VDET3
+VDET3
Vopr
⎯
2.467
2.548
2.682
1.7
2.528
2.600
2.748
⎯
2.589
2.652
2.814
16
V
V
V
V
PREEND detection voltage
PREEND release voltage
Operating voltage
VBAT voltage detection
⎯
VIN or VBAT
Δ − VDET1
ΔTa • −VDET1
Detection voltage temperature coefficient
Ta = −40°C to +85°C
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
Δ − VDET2
ΔTa • −VDET2
Δ − VDET3
ΔTa • −VDET3
Ta = −40°C to +85°C
⎯
100
⎯
⎯
ppm/°C
RESET
PREEND
CS
Sink current
ISINK
VDS = 0.5 V, VIN = VBAT = 2.0 V
1.50
2.30
mA
mA
mA
μA
3
1.50
1.50
⎯
2.30
2.30
⎯
⎯
⎯
Leakage current
Switch voltage
ILEAK
VSW1
VDS = 16 V, VIN = 16 V
0.1
+VDET1
× 0.75
VOUT
× 0.93
⎯
+VDET1
× 0.77
VOUT
× 0.95
−
+VDET1
× 0.79
VOUT
× 0.97
0.1
VBAT = 2.8 V, VIN voltage detection
V
V
4
5
CS output inhibit voltage
VSW2
ILEAK
VBAT = 3.0 V, VOUT voltage detection
VIN = 6 V, VBAT = 0 V
VBAT switch leakage current
VBAT switch resistance
μA
6
7
RSW
VIN = Open, VBAT = 3.0 V, IOUT = 10 to 500 μA
⎯
30
60
Ω
∆VSW1
Switch voltage temperature coefficient
Ta = −40°C to +85°C
⎯
⎯
100
100
⎯
⎯
ppm/°C
ppm/°C
4
∆Ta • VSW1
∆VSW2
CS output inhibit voltage temperature
coefficient
Ta = −40°C to +85°C
5
8
∆Ta • VSW2
Current consumption
ISS1
IBAT1
IBAT2
VIN = 6 V, VBAT = 3.0 V, Unload
⎯
⎯
7
0.26
1.0
⎯
15
0.50
2.1
3.5
4.0
μA
μA
μA
μA
V
VIN = Open, VBAT = 3.0 V, Unload
Ta = 25°C
Ta = 85°C
⎯
⎯
Backup power supply input voltage
VBAT
⎯
1.7
⎯
7
Remark The number in the Test Circuit column corresponds to the circuit number in the “Test Circuit” section.
16
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
Test Circuit
1.
2.
V
VBAT
VIN
VRO or VOUT
Ω
100 k
VOUT
Ω
100 k
VIN
↓
V
VSS
Ω
100 k
μ
F
VBAT
VIN
10
PREEND
VIN
V
RESET
CS
VSS
V
V
V
To measure VDET3, apply 6 V to VIN.
3.
4.
VOUT
VIN
VBAT VOUT
VIN
VBAT
CS
VIN
A
A
A
VBAT
V
V
PREEND
RESET
VIN
VSS
VSS
VDS
Measure the value after applying 6 V to VIN.
5.
6.
8.
Oscilloscope
Ω
VIN
VOUT
VIN
VSS
100 k
.
F.G
VBAT
Oscilloscope
CS
VBAT
VIN
A
VSS
VBAT
7.
VOUT
VIN
VIN
VBAT
IOUT
VBAT
VIN
↓
ISS
V
A
A
IBAT
VBAT
VSS
VSS
VBAT
VIN
Leave open and measure the value after applying
6 V to VIN.
To measure IBAT2, apply 6 V to VIN and then leave
VIN open and measure IBAT
.
Figure 5 Test Circuit
17
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
Operation Timing Chart
VIN (V)
VRO (V)
VOUT (V)
VBAT (V)
VCS (V)
(
VPREEND V)
(
VRESET V)
Remark CS, PREEND and RESET are pulled up to VOUT. Y-axis is an arbitrary scale.
Figure 6 Operation Timing Chart
18
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
Operation
The internal configuration of the S-8424A Series is as follows.
)
IN
RO
• Voltage regulator 1, which stabilizes input voltage (V and outputs it to V
)
IN
OUT
• Voltage regulator 2, which stabilizes input voltage (V and outputs it to V
)
IN
• CS voltage detector, which monitors input voltage (V
)
BAT
• PREEND voltage detector, which monitors output voltage (V
)
OUT
• RESET voltage detector, which monitors output voltage (V
• Switch unit
The functions and operations of the above-listed elements are described below.
1. Voltage Regulators
The S-8424A Series features on-chip voltage regulators with a small dropout voltage. The voltage of the VRO
and VOUT pins (the output pins of the voltage regulator) can separately be selected for the output voltage in
0.1 V steps between the range of 2.3 to 5.4 V.
[Dropout voltage Vdrop1, Vdrop2
]
Assume that the voltage output from the VRO pin is VRO(E) under the conditions of output voltage 1
described in the electrical characteristics table. VIN1 is defined as the input voltage at which output voltage
from the VRO pin becomes 98% of VRO(E) when the input voltage VIN is decreased. Then, the dropout
voltage Vdrop1 is calculated by the following expression.
Vdrop1 = VIN1 − VRO(E) × 0.98
Similarly, assume that the voltage of the VOUT pin is VOUT(E) under the conditions of output voltage 2
described in the electrical characteristics table. VIN2 is defined as the input voltage at which the output
voltage from the VOUT pin becomes 98% of VOUT(E). Then, the dropout voltage Vdrop2 is calculated by
the following expression.
Vdrop2 = VIN2 − VOUT(E) × 0.98
2. Voltage Detector
The S-8424A Series incorporates three high-precision, low power consuming voltage detectors with
hysteresis characteristics. The power of the CS voltage detector is supplied from the VIN and VBAT pins.
Therefore, the output is stable as long as the primary or backup power supplies are within the operating
voltage range (1.7 to 16 V). All outputs are Nch open-drain, and need pull-up resistors of about 100 kΩ.
2.1 CS Voltage Detector
The CS voltage detector monitors the input voltage VIN (VIN pin voltage). The detection voltage can be
selected from between 2.4 and 5.3 V in 0.1 V steps. The result of detection is output at the CS pin:
“Low” for lower voltage than the detection level and “High” for higher voltage than the release level
(however, when the VOUT pin voltage is the CS output inhibit voltage (VSW2), a low level is output).
Input voltage
Release voltage
Detection voltage
Output voltage
Figure 7 Definition of Detection and Release Voltages
19
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
2.2 PREEND Voltage Detector
The PREEND voltage detector monitors the input voltage VBAT (VBAT pin voltage). The detection voltage
can be selected from between 1.7 V and 3.4 V in 0.1 V steps. A higher voltage can also be seclected
keeping a constant difference with the RESET voltage. This function enables the warning that the backup
battery is running out. The detection result is output to the PREEND pin: “Low” for lower voltages than
the detection voltage and “High” for higher voltages than the release voltage. The power supply of the
PREEND voltage detector is supplied from the VIN pin. The output is valid only when the voltage is
supplied from the VIN pin to the VOUT pin (VIN ≥ VSW1). The output is the low level when the voltage is
supplied from the VBAT pin to the VOUT pin (VIN < VSW1).
2.3 RESET Voltage Detector
The RESET voltage detector monitors the output voltage VOUT (VOUT pin voltage). The detection
voltage can be selected from between 1.7 V and 3.4 V in 0.1 V steps. The result of detection is output at
the RESET pin: “Low” for lower voltages than the detection level and “High” for higher voltages than
the release level. RESET outputs the normal logic if the V
OUT
pin voltage is 1.0 V or more.
Caution The PREEND and RESET voltage detectors use the different pins, respectively.
Practically, the current is taken from the VBAT side, and consider the I/O voltage
difference (Vdif) of M1 when M1 is ON.
3. Switch Unit
The switch unit consists of the VSW1 and VSW2 detectors, a switch controller, voltage regulator 2, and switch
transistor M1 (Refer to “Figure 8 Switch Unit”).
VOUT
M1
VIN
REG2
VBAT
VSW2
detector
Switch
controller
VSW1
detector
Figure 8 Switch Unit
3.1 VSW1 Detector
The VSW1 detector monitors the power supply voltage VIN and sends the results of detection to the switch
controller. The detection voltage (VSW1) can be set to 77 2% or 85 2% of the CS release voltage
+VDET1.
20
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
3.2 VSW2 Detector
The VSW2 detector monitors the VOUT pin voltage and keeps the CS release voltage output low until the
VOUT pin voltage rises to VSW2 voltage. The CS pin output then changes from low to high if the VIN pin
voltage is more than the CS release voltage (+VDET1) when the VOUT pin voltage rises to 95 2% of the
output voltage of voltage regulator 2 (VOUT). The CS pin output changes from high to low regardless of
the VSW2 voltage when the VIN pin voltage drops to less than the CS detection voltage (−VDET1).
The CS pin output remains high if the VIN pin voltage stays higher than the CS detection voltage (−VDET1
)
when the VOUT pin voltage drops to less than the VSW2 voltage due to an undershoot.
3.3 Switch Controller
The switch controller controls voltage regulator 2 and switch transistor M1. There are two statuses
corresponding to the power supply voltage VIN (or power supply voltage VBAT) sequence: a special
sequence status and a normal sequence status. When the power supply voltage VIN rises and becomes
equal to or exceeds the CS release voltage (+VDET1), the normal sequence status is entered, but until then
the special sequence status is maintained.
(1) Special sequence status
The switch controller sets voltage regulator 2 ON and switch transistor M1 OFF from the initial status
until the primary power supply voltage VIN is connected and reaches more than the CS release
voltage (+VDET1) in order to prevent consumption of the backup power supply regardless of the VSW1
detector status. This status is called the special sequence status.
(2) Normal sequence status
The switch controller enters the normal sequence status from the special sequence status once the
primary power supply voltage VIN reaches more than the CS release voltage (+VDET1).
Once the normal sequence is entered, the switch controller switches voltage regulator 2 and switch
transistor M1 ON/OFF as shown in Table 14 according to the power supply voltage VIN. The time
required for voltage regulator 2 to be switched from OFF to ON is a few hundred μs at most. During
this interval, voltage regulator 2 and switch transistor M1 may both switch OFF and the VOUT pin
voltage may drop. To prevent this, connect a capacitor of 10 μF or more to the VOUT pin.
When the VOUT pin voltage becomes lower than the RESET detection voltage, the status returns to
the special sequence status.
Table 14 ON/OFF Switching of Voltage Regulator 2 and
Switch Transistor M1 According to Power Supply Voltage (VIN
)
Power Supply Voltage (VIN
VIN > VSW1
Voltage Regulator 2
Switch Transistor M1
VOUT Pin Voltage
)
VOUT
ON
OFF
ON
VIN < VSW1
OFF
VBAT − Vdif
21
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
3.4 Switch Transistor M1
Voltage regulator 2 is also used to switch from VIN pin to VOUT pin. Therefore, no reverse current flows
from VOUT pin to VIN pin when voltage regulator 2 is OFF. The output voltage of voltage regulator 2 can
be selected from between 2.3 V and 5.4 V in 0.1 V steps.
The on-resistance of switch transistor M1 is 60 Ω or lower (IOUT = 10 to 500 μA).
Therefore, when M1 is switched ON and VOUT pin is connected to VBAT pin, the voltage drop (Vdif
)
caused by M1 is 60 × IOUT (output current) at maximum., and VBAT – Vdif (max.) is output to the VOUT pin at
minimum.
When voltage regulator 2 is ON and M1 is OFF, the leakage current of M1 is kept below 0.1 μA max. (VIN
= 6 V, Ta = 25°C) with the VBAT pin grounded (VSS pin).
VOUT
Vdif
VIN
REG2
VBAT
M1
Figure 9 Definition of Vdif
22
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
Transient Response
1. Line Transient Response Against Input Voltage Variation
The input voltage variation differs depending on whether the power supply input (0 V to 10 V square wave) is
applied or the power supply variation (6 V and 10 V square waves) is applied. This section describes the
ringing waveforms and parameter dependency of each type. The test circuit is shown for reference.
Power supply application: 0 V to 10 V Square wave
Fast amplifier
10 V
VOUT
S-8424A
Series
VIN
Oscilloscope
Input voltage
0 V
RL
COUT
VSS
Overshoot
P.G.
Undershoot
Output voltage
Figure 10 Power Supply Application:
0 V to 10 V Square Wave
Figure 11 Test Circuit
Power Supply Application
VOUT pin
VRO pin
COUT 22 F, I
50 mA, Ta 25 C
CRO 22 F, I
30 mA, Ta 25 C
= = °
=
μ
=
=
°
=
μ
OUT
RO
10 V
10 V
Input Voltage
(5 V/div)
Input Voltage
(5 V/div)
0 V
0 V
Output Voltage
(0.5 V/div)
Output Voltage
(0.5 V/div)
t (100 s/div)
μ
t (100 s/div)
μ
Figure 12 Ringing Waveform of Power Supply
Application (VOUT Pin)
Figure 13 Ringing Waveform of Power Supply
Application (VRO Pin)
23
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
Power supply variation: 6 V and 10 V square waves
Fast amplifier
10 V
Input
6 V
voltage
VOUT
S-8424A Series
VSS
Oscillo-scope
VIN
RL
COUT
Output
voltage
Overshoot
P.G.
Undershoot
Figure 14 Power Supply Variation:
6 V and 10 V Square Waves
Figure 15 Test Circuit
Power Supply Variation
VOUT pin
COUT 22 F, I
50 mA, Ta 25 C
= °
=
μ
=
OUT
10 V
10 V
Input Voltage
6 V
6 V
(4 V/div)
Output Voltage
(50 mV/div)
t (100 μs/div)
Figure 16 Ringing Waveform of Power Supply Variation (VOUT Pin)
VRO pin
CRO 22 F, I
30 mA, Ta 25 C
= °
=
μ
=
RO
10 V
10 V
6 V
Input Voltage
6 V
(4 V/div)
Output Voltage
(50 mV/div)
t (100 μs/div)
Figure 17 Ringing Waveform of Power Supply Variation (VRO Pin)
24
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
OUT
OUT
IN
Reference data: Dependency of output current (I ), load capacitance (C ), input variation width (ΔV ),
temperature (Ta)
For reference, the following pages describe the results of measuring the ringing amounts at the VOUT and
VRO pins using the output current (IOUT), load capacitance (COUT), input variation width (ΔVIN), and
temperature (Ta) as parameters.
1.1 IOUT Dependency
(1) VOUT pin
(2) VRO pin
COUT 22 F, V
6 V and 10 V, Ta 25 C
CRO 22 F, V
6 V and 10 V, Ta 25 C
=
μ
=
=
°
=
μ
=
°
=
IN
IN
0.25
0.25
0.20
0.15
0.20
0.15
0.10
0.05
0.00
0.10
0.05
0.00
0
20
IRO (mA)
40
60
0
20
40
60
IOUT (mA)
1.2 COUT Dependency
(1) VOUT pin
(2) VRO pin
IOUT 50 mA, V
6 V and 10 V, Ta 25 C
°
=
=
=
IRO = 30 mA, VIN = 6 V and 10 V, Ta = 25°C
IN
0.50
0.50
0.40
0.30
0.40
0.30
0.20
0.10
0.20
0.10
0.00
0.00
0
0
10
20
30
40 50
10
20
30
40 50
COUT ( F)
μ
CRO (μF)
Overshoot
Undershoot
25
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
1.3 ΔVIN Dependency
ΔVIN shows the difference between the low voltage fixed to 6 V and the high voltage.
For example, ΔVIN = 2 V means the difference between 6 V and 8 V.
(1) VOUT pin
(2) VRO pin
0.30
IRO 30 mA, C
22 F, Ta 25 C
=
=
RO
μ
=
°
IOUT 50 mA, C
22 F, Ta 25 C
μ = °
=
=
OUT
0.30
0.25
0.20
0.15
0.10
0.25
0.20
0.15
0.10
0.05
0.05
0.00
0.00
0
1
2
3
4
5
0
1
2
3
4
5
V (V)
Δ
IN
V (V)
Δ
IN
1.4 Temperature Dependency
(1) VOUT pin
(2) VRO pin
0.30
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.25
0.20
0.15
0.10
VIN
6
=
=
10 V,
= ↔
VIN
6
=
=
10 V,
= ↔
IOUT 50 mA,
COUT 22
0.05
0.00
IOUT 30 mA,
CRO 22 F
F
μ
μ
–50
0
50
100
–50
0
50
100
Ta ( C)
°
Ta ( C)
°
Overshoot
Undershoot
26
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
2. Load Transient Response Based on Output Current Fluctuation
The overshoot and undershoot are caused in the output voltage if the output current fluctuates between 10 μA and
50 mA (VRO is between 10 μA and 30 mA) while the input voltage is constant. Figure 18 shows the output
voltage variation due to the output current. Figure 19 shows the test circuit for reference. The latter half of this
section describes ringing waveform and parameter dependency.
Output
50 mA
current
Oscilloscope
VOUT
VIN
10 μA
S-8424A
Series
VSS
COUT
Overshoot
Undershoot
Output
current
Figure 18 Output Voltage Variation due to
Output Current
Figure 19 Test Circuit
Figure 20 shows the ringing waveforms at the VOUT pin and Figure 21 shows the ringing waveforms at the VRO
pin due to the load variation, respectively.
VOUT pin
VIN = 6.0 V, COUT = 22 μF, Ta = 25°C
50 mA
50 mA
Output current
10 μA
10 μA
Output voltage
(50 mV/div)
t (50 μs/div)
Figure 20 Ringing Waveform due to Load Variation (VOUT Pin)
t (500 ms/div)
VRO pin
VIN=6.0 V, CRO=22 μF, Ta=25°C
30 mA
30 mA
Output current
10 μA
10 μA
Output voltage
(20 mV/div)
t (20 ms/div)
t (50 μs/div)
Figure 21 Ringing Waveform due to Load Variation (VRO Pin)
27
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
IN
OUT
OUT
Reference data: Dependency of input voltage (V ), load capacitance (C ), output variation width (ΔI ), and
temperature (Ta)
2.1 VIN Dependency
(1) VOUT pin
(2) VRO pin
CRO = 22 μF, IRO = 30 mA and 10 μA, Ta = 25°C
COUT = 22 μF, IOUT = 50 mA and 10 μA, Ta = 25°C
0.12
0.12
0.10
0.08
0.10
0.08
0.06
0.04
0.06
0.04
0.02
0.00
0.02
0.00
4
5
6
7
8
9 10
4
5
6
7
8
9 10
VIN (V)
VIN (V)
2.2 COUT Dependency
(1) VOUT pin
(2) VRO pin
VIN 6.0 V, I
50 mA and 10 A, Ta 25 C
VIN = 6.0 V, IRO = 30 mA and 10 μA, Ta = 25°C
0.30
=
=
μ
=
°
OUT
0.60
0.25
0.20
0.50
0.40
0.15
0.10
0.30
0.20
0.05
0.00
0.10
0.00
0
10
20
30
40 50
0
10
20
30 40 50
COUT ( F)
μ
CRO (μF)
Overshoot
Undershoot
28
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
2.3 ΔIOUT Dependency
ΔIOUT and ΔIRO show the fluctuation between the low current stabilized at 10 μA and the high current. For
example, ΔIOUT = 10 mA means a fluctuation between 10 μA and 10 mA.
(1) VOUT pin
(2) VRO pin
CRO=22 μF, VIN=6.0 V, Ta=25°C
0.12
=
μ
= = °
6 V, Ta 25 C
OUT
C
IN
22 F, V
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.10
0.08
0.06
0.04
0.02
0.00
0
10 20 30 40 50 60
ΔIRO (mA)
0 10 20 30 40 50 60
Δ
IOUT (mA)
2.4 Temperature Dependency
(1) VOUT pin
(2) VRO pin
VIN=6.0 V, IOUT=50 mA ↔ 10 μA, COUT=22 μF
VIN=6.0 V, IRO=30 mA ↔ 10 μA, CRO=22 μF
0.16
0.08
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
50
Ta (°C)
100
−50
0
50
Ta (°C)
100
−50
Overshoot
Undershoot
29
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
Standard Circuit
VRO
+
μ
F
10
Ω
1 k
VRO
VBAT
VIN
VOUT
VOUT
+
+
μ
F
10
μ
F
3 V
0.1
6 V
10 μF
S-8424A
Series
VOUT
Ω
100 k
VSS
CS
RESET
PREEND
VOUT
VOUT
Ω
100 k
Ω
100 k
Figure 22 Standard Circuit
Caution 1. Be sure to add a 10 μF or more capacitor to the VOUT and VRO pins.
2. The above connections and values will not guarantee correct operation. Before setting these
values, perform sufficient evaluation on the application to be actually used.
30
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
Precautions
• In applications with small IRO or IOUT, the output voltages VRO and VOUT may rise, causing the load stability to
exceed standard levels. Set IRO and IOUT to 10 μA or more.
• Attach the proper capacitor to the VOUT pin to prevent the RESET voltage detector (which monitors the VOUT
pin) from coming active due to undershoot.
• Watch for overshoot and ensure it does not exceed the ratings of the IC chips and/or capacitors attached to the
VRO and VOUT pins.
• Add a 10 μF or more capacitor to the VOUT and VRO pins.
• When VIN rises from the voltage more than VSW1, a low pulse of less than 4 ms flows through the
pin
PREEND
even when VBAT is more than the
release voltage. Thus when monitoring the
PREEND
pin, make
PREEND
sure to take the 4 ms interval or more after the rise of VIN.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in
electrostatic protection circuit.
Application Circuits
1. When Using Timer Micro controllers for Backup to display PREEND in the primary CPU
+
10
F
μ
Ω
100 k
VOUT
Ω
100 k
VIN
+
S-8424A
Series
VCC
μ
F
10
CS
CS
Timer
Ω
1 k
6 V
VBAT
PREEND
microcontroller
0.1
F
μ
3 V
RESET
RESET
VRO
+
10
F
μ
VSS
Ω
100 k
VCC
RESET
INT
Main CPU
Address data
Figure 23 Application Circuit 1
31
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
2. When Using Secondary Battery as Backup Battery
+
+
10
F
10
F
μ
μ
VRO
VOUT
VCC
VIN
Ω
100 k
Ω
100 k
S-8424A
Microcontroller
INT
+
Series
10
F
μ
VBAT
CS
6 V
0.1
F
μ
RESET
3 V
RESET
VSS
Figure 24 Application Circuit 2
Remark The backup battery can be floating-recharged by using voltage regulator 1.
3. Memory Card
Card unit
VIN
VIN
VOUT
μ
F
10
+
+
S-8424A
Series
F
10
μ
Ω
100 k
SRAM
CS
Ω
Ω
100 k
100 k
BDT2
BDT1
PREEND
RESET
CS
VBAT
3 V
VSS
0.1 F
μ
CS
Figure 25 Application Circuit 3
Caution The above connections and values will not guarantee correct operation. Before setting these
values, perform sufficient evaluation on the application to be actually used.
32
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
Characteristics
1. Voltage Regulator Unit (VRO = VOUT = 3.0 V)
1.1 Input Voltage (VIN) vs. Output Voltage (VRO) Characteristics (REG1)
(1) Ta = 85°C (2) Ta = 25°C
IRO = 10 mA, 30 mA, 50 mA, 70 mA, 90 mA IRO = 10 mA, 30 mA, 50 mA, 70 mA, 90 mA
3.2
2.8
2.4
2.0
3.2
2.8
2.4
2.0
IRO 10 mA
=
IRO 10 mA
=
IRO 90 mA
=
IRO 90 mA
=
2.0
3.0
4.0
5.0
2.0
3.0
4.0
5.0
VIN (V)
VIN (V)
(3) Ta = −40°C
IRO = 10 mA, 30 mA, 50 mA, 70 mA, 90 mA
3.2
IRO 10 mA
=
2.8
2.4
2.0
IRO 90 mA
=
2.0
3.0
4.0
5.0
VIN (V)
1.2 Input Voltage (VIN) vs. Output Voltage (VOUT) Characteristics (REG2)
(1) Ta = 85°C (2) Ta = 25°C
IOUT = 10 mA, 30 mA, 50 mA, 70 mA, 90 mA
IOUT = 10 mA, 30 mA, 50 mA, 70 mA, 90 mA
3.2
2.8
3.2
IOUT 10 mA
=
IOUT
mA
= 10
2.8
2.4
2.0
IOUT
mA
= 90
IOUT 90 mA
=
2.4
2.0
2.0
3.0
4.0
5.0
2.0
3.0
4.0
5.0
VIN (V)
VIN (V)
(3) Ta = −40°C
IOUT = 10 mA, 30 mA, 50 mA, 70 mA, 90 mA
IOUT = 10 mA
3.2
2.8
IOUT = 90 mA
2.4
2.0
2.0
3.0
4.0
5.0
VIN (V)
33
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
1.3 Output Current (IRO) vs. Dropout Voltage (Vdrop1) Characteristics
1.4 Output Current (IOUT) vs. Dropout Voltage (Vdrop2) Characteristics
1.0
1.0
°
Ta 85 C
=
25°C
40 C
0.8
0.6
0.4
0.2
0.0
0.8
°
°
Ta 85 C
=
−
°C
25
0.6
0.4
0.2
0.0
°
40 C
−
0
0.02
0.04
0.06
0
0.02
0.04
0.06
IRO
(A)
IOUT (A)
1.5 Output Current (IRO) vs. Output Voltage (VRO) Characteristics
1.6 Output Current (IOUT) vs. Output Voltage (VOUT) Characteristics
3.25
3.25
°
Ta −40 C
=
°
−
Ta
40 C
°
=
3.15
3.15
3.05
2.95
°
25 C
25 C
°
°
85 C
85 C
3.05
2.95
VIN 6 V
VIN = 6 V
=
2.85
2.85
μ
μ
100
μ
μ
100
10 m
1
10 m
1
1
1
IRO (A)
IRO (A)
1.7 Output voltage (VRO) Temperature Characteristics
1.8 Output voltage (VOUT) Temperature Characteristics
30
30
VIN 6 V, I
50 mA
=
=
OUT
VIN =
mA
6 V, IRO = 30
20
10
0
20
10
0
°
Based on VOUT voltage when Ta is 25 C
°
Based on VRO voltage when Ta is 25 C
10
−
−
10
20
−
−
20
30
−
−
30
40
20
0
20
40
60 80 100
40 20
−
0
20 40
60 80 100
−
−
−
°
°
Ta ( C)
Ta ( C)
1.9 Input Stability (VRO) Temperature Characteristics
1.10 Input Stability (VOUT) Temperature Characteristics
20
20
15
10
15
10
5
0
5
0
40
20
−
0
20
40
60
80 100
−
40
20
−
0
20
40
60
80 100
−
°
Ta ( C)
Ta (°C)
1.11 Load Stability (VRO) Temperature Characteristics
1.12 Load Stability (VRO) Temperature Characteristics
40
40
30
20
10
0
30
20
10
0
−40
−20
0
20
40
60
80
100
−
40
−
20
0
20
40
60
80 100
°
Ta (°C)
Ta ( C)
34
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
2. Voltage Detector
2.1 CS Voltage Detector (−VDET1 = 3.3 V)
(1) Detection voltage (−VDET1) temperature
(2) Output current (ISINK) characteristics
characteristics
20
30
25
°
C
Ta = 25
Based on CS ( VDET1) voltage when Ta is 25°C
10
0
−
VIN
= 3 V
20
15
10
10
20
−
−
VIN
= 1.7 V
5
0
40
20
−
0
20
40
60
80 100
−
0.0
1.0
2.0
3.0
4.0
°
Ta ( C)
VDS (V)
(3) Output current (ISINK) temperature characteristics
10
8
6
4
VIN
= VBAT = 2.0 V, VDS = 0.5 V
2
0
40
20
−
0
20
40
60
80 100
−
°
Ta ( C)
2.2 RESET Voltage Detector (−VDET2 = 2.2 V)
(1) Detection voltage (−VDET2) temperature
(2) Output current (ISINK) characteristics
characteristics
20
30
Based on RESET ( VDET2) voltage
−
VIN 3 V
25
20
15
10
5
=
°
Ta 25 C
=
10
0
°
when Ta is 25 C
VIN 1.7 V
=
−10
20
−
0
40
−
20
−
0
20
40
60
80 100
0.0
1.0
2.0
3.0
4.0
°
Ta ( C)
VDS (V)
(3) Output current (ISINK) temperature characteristics
10
VIN = VBAT = 2.0 V, VDS = 0.5 V
8
6
4
2
0
0
20 40
60
80 100
−40 −20
Ta (°C)
35
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
2.3 PREEND Voltage Detector (−VDET3 = 2.6 V)
(1) Detection voltage (−VDET3) temperature
(2) Output current (ISINK) characteristics
characteristics
30
20
VIN
= 3 V
Based on PREEND ( VDET3) voltage
°C
Ta = 25
−
25
10
0
°
when Ta is 25 C
20
15
VIN
= 1.7 V
10
5
10
−
−
20
0
0.0
40
−
20
−
0
20
40
60
80 100
1.0
2.0
3.0
4.0
VDS (V)
VDS (V)
(3) Output current (ISINK) temperature characteristics
10
8
6
4
VIN
V
2.0 V, V
0.5 V
=
=
=
BAT
DS
2
0
40
20
−
0
20
40
60
80 100
−
°
Ta ( C)
36
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
3. Switch Unit
3.1 Switch Voltage (VSW1) Temperature
3.2 CS Output Inhibit Voltage (VSW2) Temperature
Characteristics
Characteristics
20
20
Based on VSW2 voltage when Ta is 25°C
10
10
°
Based on VSW1 voltage when Ta is 25 C
0
−10
−20
0
10
−
20
−
−40 −20
0
20
40
60
80 100
40
−
20
−
0
20
40
60
80 100
°
Ta ( C)
°
Ta ( C)
3.3 Input Voltage (VBAT) vs. VBAT Switch
3.4 VBAT Switch Resistance (RSW) Temperature
Characteristics
Resistance(RSW) Characteristics
60
60
50
40
50
μ
A
VBAT 3 V, I
500
=
=
OUT
μ
IOUT
A
= 500
40
30
20
10
0
30
20
10
0
40
20
−
0
20
40
60
80 100
−
1
2
3
4
5
°
Ta ( C)
VBAT (V)
3.5 VBAT Switch Leakage Current (ILEAK) Temperature
Characteristics
30
25
VIN 6.0 V, V
0 V
=
=
BAT
20
15
10
5
0
40
−
20
−
0
20
40
60
80 100
°
Ta ( C)
37
BATTERY BACKUP SWITCHING IC
S-8424A Series
Rev.3.0_01
4. Consumption Current
4.1 VIN vs. VIN Consumption Current (ISS1
)
4.2 VBAT vs. VBAT2 Consumption Current (IBAT2)
Characteristics
Characteristics
16
2.0
°
Ta 85 C
=
°
Ta 85 C
=
°
25 C
12
8
°
25 C
1.5
1.0
0.5
0.0
°
40 C
−
°
40 C
−
4
0
0
2
4
6
8
10 12 14 16 18
2.0
2.4
2.8
3.2
3.6
4.0
VIN (V)
VBAT (V)
4.3 Consumption Current Temperature
Characteristics
(1) ISS1
(2) IBAT2
16
2.0
12
VIN
3.0 V
=
= 6.0 V, VBAT
1.5
1.0
VIN open, V
BAT = 3.0 V
=
8
4
0
0.5
0.0
40
20
−
0
20
40
60
80 100
−
−40 −20
0
20
40
60
80 100
°
Ta ( C)
°
Ta ( C)
38
+0.3
-0.2
3.00
5
8
1
4
0.17±0.05
0.2±0.1
0.65
No. FT008-A-P-SD-1.1
TSSOP8-E-PKG Dimensions
FT008-A-P-SD-1.1
TITLE
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
4.0±0.1
2.0±0.05
ø1.55±0.05
0.3±0.05
+0.1
-0.05
8.0±0.1
ø1.55
(4.4)
+0.4
-0.2
6.6
8
1
4
5
Feed direction
No. FT008-E-C-SD-1.0
TITLE
TSSOP8-E-Carrier Tape
FT008-E-C-SD-1.0
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
13.4±1.0
17.5±1.0
Enlarged drawing in the central part
ø21±0.8
2±0.5
ø13±0.5
No. FT008-E-R-SD-1.0
TSSOP8-E-Reel
FT008-E-R-SD-1.0
TITLE
No.
SCALE
UNIT
QTY.
3,000
mm
SII Semiconductor Corporation
13.4±1.0
17.5±1.0
Enlarged drawing in the central part
ø21±0.8
2±0.5
ø13±0.5
No. FT008-E-R-S1-1.0
TSSOP8-E-Reel
FT008-E-R-S1-1.0
TITLE
No.
SCALE
UNIT
QTY.
4,000
mm
SII Semiconductor Corporation
3.00±0.2
0.525typ.
0.65
+0.1
-0.05
0.30
(ø1.0)
No. PA008-B-P-SD-3.0
(2.4)
SON8B-B-PKG Dimensions
PA008-B-P-SD-3.0
TITLE
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
8.0±0.1
2.0±0.05
1.2±0.1
4.0±0.1
ø1.55±0.05
ø1.55±0.05
0.3±0.05
3.4±0.1
1
8
4
5
Feed direction
No. PA008-B-C-SD-1.1
SON8B-B-Carrier Tape
PA008-B-C-SD-1.1
TITLE
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
2±0.3
13.5±0.5
Enlarged drawing in the central part
ø13±0.2
No. PA008-B-R-SD-1.1
SON8B-B-Reel
PA008-B-R-SD-1.1
TITLE
No.
SCALE
UNIT
3,000
QTY.
mm
SII Semiconductor Corporation
Disclaimers (Handling Precautions)
1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.
2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of
any specific mass-production design.
SII Semiconductor Corporation is not responsible for damages caused by the reasons other than the products or
infringement of third-party intellectual property rights and any other rights due to the use of the information described
herein.
3. SII Semiconductor Corporation is not responsible for damages caused by the incorrect information described herein.
4. Take care to use the products described herein within their specified ranges. Pay special attention to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
SII Semiconductor Corporation is not responsible for damages caused by failures and/or accidents, etc. that occur
due to the use of products outside their specified ranges.
5. When using the products described herein, confirm their applications, and the laws and regulations of the region or
country where they are used and verify suitability, safety and other factors for the intended use.
6. When exporting the products described herein, comply with the Foreign Exchange and Foreign Trade Act and all
other export-related laws, and follow the required procedures.
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weapons of mass destruction or military use. SII Semiconductor Corporation is not responsible for any provision
(export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons,
missiles, or other military use.
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human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems,
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aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle
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body and devices that directly affect human life, etc.
Prior consultation with our sales office is required when considering the above uses.
SII Semiconductor Corporation is not responsible for damages caused by unauthorized or unspecified use of our
products.
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The user of these products should therefore take responsibility to give thorough consideration to safety design
including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing
injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction.
The entire system must be sufficiently evaluated and applied on customer's own responsibility.
10. The products described herein are not designed to be radiation-proof. The necessary radiation measures should be
taken in the product design by the customer depending on the intended use.
11. The products described herein do not affect human health under normal use. However, they contain chemical
substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips
may be sharp. Take care when handling these with the bare hands to prevent injuries, etc.
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The information described herein does not convey any license under any intellectual property rights or any other
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Corporation is strictly prohibited.
14. For more details on the information described herein, contact our sales office.
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Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 211
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