S-85S0AB08-I6T1U [SII]
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT;
| 型号： | S-85S0AB08-I6T1U |
| 厂家： | 
SEIKO INSTRUMENTS INC |
| 描述： | 5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT 输入元件 开关 |
| 文件： | 总30页 (文件大小：2620K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S-85S0A Series
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN
SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
www.sii-ic.com
© SII Semiconductor Corporation, 2017
Rev.1.0_00
The S-85S0A Series introduces own distinctive low power consumption control and COT (Constant On-Time) control,
features ultra low current consumption (260 nA quiescent current) and fast transient response, operates at PFM control.
The S-85S0A Series realizes high efficiency in a wide range of load current consumption and provides strong support for
extended period operation of mobile devices and wearable devices which are equipped with compact batteries.
The S-85S0A Series can configure a step-down regulator only with a coil, an input capacitor, and an output capacitor. By
using external parts recommended in this datasheet, the occupancy area can be reduced to 1.6 mm × 4.3 mm = 6.9 mm2,
and it contributes to miniaturization of electronic equipment.
Features
Applications
• Ultra low current consumption:
• Efficiency (when under 100 μA load):
• Fast transient response:
• Input voltage:
260 nA quiescent current
90.5%
COT control
• Wearable device
• Bluetooth device
• Wireless sensor network device
• Healthcare equipment
• Smart meter
2.2 V to 5.5 V
• Output voltage:
0.7 V to 2.5 V, in 0.05 V step
2.6 V to 3.9 V, in 0.1 V step
1.5% (1.0 V ≤ VOUT ≤ 3.9 V)
15 mV (0.7 V ≤ VOUT < 1.0 V)
420 mΩ
• Portable game device
• Output voltage accuracy:
Package
• High side power MOS FET on-resistance:
• Low side power MOS FET on-resistance:
• Soft-start function:
• SNT-6A
(1.80 mm
320 mΩ
1 ms typ.
× 1.57 mm × t0.5 mm max.)
• Under voltage lockout function (UVLO):
• Thermal shutdown function:
1.8 V typ. (detection voltage)
135°C typ. (detection temperature)
300 mA (at L = 2.2 μH)
• Overcurrent limit function:
•
Automatic recovery type short-circuit protection function:Hiccup control
• Input and output capacitors:
• Operation temperature range:
• Lead-free (Sn 100%), halogen-free
Ceramic capacitor compatible
Ta = −40°C to +85°C
Typical Application Circuit
Efficiency
VOUT(S) = 1.8 V
L
100
2.2 H
V
IN
V
OUT
VIN
SW
80
60
40
20
0
V
IN = 2.5 V
IN = 3.6 V
C
OUT
C
IN
4.7 F
4.7 F
PVSS
EN
VOUT
V
VIN = 4.2 V
VSS
0.01
0.1
1
10
100
IOUT [mA]
1
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S0A Series
Rev.1.0_00
Block Diagram
C
IN
V
IN
VIN
VOUT
Error amplifier
−
+
+
ON time generation
circuit
Output control circuit
L
VOUT
SW
UVP circuit
−
+
Reverse current
detection circuit
C
OUT
Reference voltage circuit
Soft-start cicuit
+
−
EN
Enable
PVSS
Overcurrent
circuit
Thermal shutdown circuit
UVLO circuit
protection circuit
+
−
VSS
Figure 1
2
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.0_00
S-85S0A Series
Product Name Structure
Users can select output voltage for the S-85S0A Series. Refer to "1. Product name" regarding the contents of
product name, "2. Package" regarding the package, "3. Product name list" regarding details of the product
name.
1. Product name
S-85S0A
B
xx
-
I6T1
U
Environmental code
U:
Lead-free (Sn 100%), halogen-free
Package name abbreviation and packing specification*1
I6T1: SNT-6A, Tape
Output voltage*2, *3
07 to 39
(e.g., when the output voltage is 0.7 V, it is expressed as 07.)
*1. Refer to the tape drawing.
*2. Refer to "3. Product name list".
*3. In the range from 0.7 V to 2.5 V, the products which have 0.05 V step are also available.
Contact our sales office when the product is necessary.
2. Package
Table 1 Package Drawing Codes
Package Name
SNT-6A
Dimension
PG006-A-P-SD
Tape
Reel
Land
PG006-A-C-SD
PG006-A-R-SD
PG006-A-L-SD
3
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S0A Series
Rev.1.0_00
3. Product name list
Table 2
Output Voltage (VOUT
)
S-85S0A Series
0.7 V 15 mV
0.8 V 15 mV
0.9 V 15 mV
1.0 V 1.5%
1.1 V 1.5%
1.2 V 1.5%
1.3 V 1.5%
1.4 V 1.5%
1.5 V 1.5%
1.6 V 1.5%
1.7 V 1.5%
1.8 V 1.5%
1.9 V 1.5%
2.0 V 1.5%
2.1 V 1.5%
2.2 V 1.5%
2.3 V 1.5%
2.4 V 1.5%
2.5 V 1.5%
2.6 V 1.5%
2.7 V 1.5%
2.8 V 1.5%
2.9 V 1.5%
3.0 V 1.5%
3.1 V 1.5%
3.2 V 1.5%
3.3 V 1.5%
3.4 V 1.5%
3.5 V 1.5%
3.6 V 1.5%
3.7 V 1.5%
3.8 V 1.5%
3.9 V 1.5%
S-85S0AB07-I6T1U
S-85S0AB08-I6T1U
S-85S0AB09-I6T1U
S-85S0AB10-I6T1U
S-85S0AB11-I6T1U
S-85S0AB12-I6T1U
S-85S0AB13-I6T1U
S-85S0AB14-I6T1U
S-85S0AB15-I6T1U
S-85S0AB16-I6T1U
S-85S0AB17-I6T1U
S-85S0AB18-I6T1U
S-85S0AB19-I6T1U
S-85S0AB20-I6T1U
S-85S0AB21-I6T1U
S-85S0AB22-I6T1U
S-85S0AB23-I6T1U
S-85S0AB24-I6T1U
S-85S0AB25-I6T1U
S-85S0AB26-I6T1U
S-85S0AB27-I6T1U
S-85S0AB28-I6T1U
S-85S0AB29-I6T1U
S-85S0AB30-I6T1U
S-85S0AB31-I6T1U
S-85S0AB32-I6T1U
S-85S0AB33-I6T1U
S-85S0AB34-I6T1U
S-85S0AB35-I6T1U
S-85S0AB36-I6T1U
S-85S0AB37-I6T1U
S-85S0AB38-I6T1U
S-85S0AB39-I6T1U
Remark Please contact our sales office for products with specifications other than the above.
4
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.0_00
S-85S0A Series
Pin Configuration
1. SNT-6A
Table 3
Top view
Pin No.
Symbol
VOUT
Description
1
2
3
4
5
Voltage output pin
GND pin
1
2
3
6
5
VSS
SW
4
External inductor connection pin
Power GND pin
PVSS
VIN
Figure 2
Power supply pin
Enable pin
6
EN
"H"
"L"
: Enable (normal operation)
: Disable (standby)
5
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S0A Series
Rev.1.0_00
Absolute Maximum Ratings
Table 4
(Unless otherwise specified: Ta = +25°C, VSS = 0 V)
Item
VIN pin voltage
Symbol
Absolute Maximum Rating
Unit
V
VIN
VSS − 0.3 to VSS + 6.0
EN pin voltage
VEN
VOUT
VSW
VSS − 0.3 to VIN + 0.3 ≤ VSS + 6.0
VSS − 0.3 to VIN + 0.3 ≤ VSS + 6.0
VSS − 0.3 to VIN + 0.3 ≤ VSS + 6.0
VSS − 0.3 to VSS + 0.3 ≤ VSS + 6.0
−40 to +85
V
VOUT pin voltage
SW pin voltage
V
V
PVSS pin voltage
Operation temperature
Storage temperature
VPVSS
Topr
V
°C
°C
Tstg
−40 to +125
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
Thermal Resistance Value
Table 5
Item
Symbol
Condition
Board A
Min.
Typ.
224
176
−
−
−
Max.
Unit
−
−
−
−
−
−
−
−
−
−
°C/W
°C/W
°C/W
°C/W
°C/W
Board B
Board C
Board D
Board E
Junction-to-ambient thermal resistance*1 θJA
SNT-6A
*1. Test environment: compliance with JEDEC STANDARD JESD51-2A
Remark Refer to " Power Dissipation" and "Test Board" for details.
6
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.0_00
S-85S0A Series
Electrical Characteristics
Table 6
(VIN = 3.6 V*1, Ta = +25°C unless otherwise specified)
Item
Symbol
VIN
Condition
Min.
Typ.
3.6
Max.
Unit
V
Operating input voltage
−
2.2
5.5
VOUT(S)
× 0.985
VOUT(S)
− 0.015
VOUT(S)
× 1.015
VOUT(S)
+ 0.015
1.0 V ≤ VOUT ≤ 3.9 V, no external parts
0.7 V ≤ VOUT <1.0 V, no external parts
VEN = 0 V
VOUT(S)
VOUT(S)
1
V
V
Output voltage*2
VOUT
Current consumption
at shutdown
ISSS
−
100
nA
VOUT = VOUT(S) + 0.1 V, VEN = VIN,
no external parts,
no switching operation
Current consumption
at switching off
ISS1
−
260
500
nA
High level input voltage
Low level input voltage
High level input current
Low level input current
High side power
MOS FET on-resistance
Low side power
MOS FET on-resistance
High side power
MOS FET leakage current
Low side power
MOS FET leakage current
Current limit*3
VSH
VSL
ISH
VIN = 2.2 V to 5.5 V, EN pin
VIN = 2.2 V to 5.5 V, EN pin
VIN = 2.2 V to 5.5 V, EN pin, VEN = VIN
VIN = 2.2 V to 5.5 V, EN pin, VEN = 0 V
1.1
−
−100
−100
−
−
−
−
−
V
V
0.3
100
100
nA
nA
ISL
RHFET
RLFET
IHSW
ISW = 100 mA
−
−
−
420
320
1
−
−
mΩ
mΩ
nA
ISW = −100 mA
VIN = 2.2 V to 5.5 V, VEN = 0 V, VSW = 0 V
100
ILSW
VIN = 2.2 V to 5.5V, VEN = 0 V, VSW = VIN
−100
−
1
−
−
nA
mA
ns
ILIM
L = 2.2 μH
300
tON(S)
t
V
ON(S) = 1 ms × VOUT/VIN,
OUT = VOUT(S) × 0.9
ON time*4
tON
t
ON(S)/1.3
tON(S)/0.7
Minimum OFF time
tOFF(MIN)
−
−
1.7
100
1.8
−
1.9
ns
V
UVLO detection voltage
UVLO release voltage
VUVLO
VUVLO
When VIN falls
When VIN rises
−
+
1.9
2.0
2.1
V
VOUT(S)
× 0.7
1.5
UVP detection voltage
Soft-start wait time
Soft-start time
VUVP
tSSW
tSS
−
−
−
−
−
−
−
V
Time until VOUT starts rising
Time until VOUT reaches 90% after it
starts rising
ms
ms
1.0
135
115
Thermal shutdown
detection temperature
Thermal shutdown
release temperature
TSD
TSR
Junction temperature
Junction temperature
−
−
−
−
°C
°C
*1. VIN = VOUT(S) + 1.0 V (VOUT(S) ≥ 2.6 V)
*2. VOUT: Actual output voltage
VOUT(S): Set output voltage
*3. The current limit changes according to the L value for the inductor to be used, input voltage, and output voltage.
Refer to " Operation" for details.
*4. tON: Actual ON time
tON(S): Set ON time
7
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S0A Series
Rev.1.0_00
Operation
1. Fast transient response
Distinctive COT (Constant On-Time) control is used for DC-DC converter control.
The S-85S0A Series monitors the output voltage (VOUT) using a comparator and if VOUT falls below the targeted
value, the high side power MOS FET will turn on for a certain amount of time. Since the high side power MOS FET
turns on and VOUT rises immediately after the load current fluctuates rapidly and VOUT falls, the fast transient
response is realized.
The S-85S0A Series outputs ON time in proportion to VOUT and in inverse proportion to power supply voltage.
2. PFM control (pulse frequency modulation method)
The S-85S0A Series operates at PFM control, and the pulse will skip according to the load current. This reduces
switching loss and improves efficiency.
The S-85S0A Series has a built-in reverse current detection circuit. The reverse current detection circuit monitors
the current flowing through the inductor. If the bottom of ripple current in the inductor falls to 0 mA, the high side
power MOS FET and low side power MOS FET will turn off and switching operation will stop. Switching frequency
(fSW) will fall by skipping a pulse. This means that the smaller IOUT is, the more the switching frequency will drop, and
it reduces switching loss.
3. Ultra low current consumption
When in discontinuous mode, the S-85S0A Series reduces current consumption to 260 nA typ. by intermittently
operating a control circuit and a protection circuit. If switching operation stops and a certain amount of time elapses
after the high side power MOS FET and low side power MOS FET turn off, only the necessary circuits will operate.
Under voltage lockout function (UVLO), thermal shutdown function, current limit function, and automatic recovery
type short-circuit protection function are prepared in the S-85S0A Series, and each protection function will carry out
detection operation for a certain amount of time from when the high side power MOS FET turns on. It is thus able to
realize ultra low current consumption.
4. EN pin
This pin starts and stops switching operation. When the EN pin is set to "L", the operation of all internal circuits,
including the high side power MOS FET, is stopped, reducing current consumption. Current consumption increases
when a voltage of 0.3 V to VIN − 0.3 V is applied to the EN pin. When not using the EN pin, connect it to the VIN pin.
Since the EN pin is neither pulled down nor pulled up internally, do not use it in the floating status. The structure of
the EN pin is shown in Figure 3.
Table 7
EN Pin
Internal Circuit
Enable (normal operation)
Disable (standby)
VOUT Pin Voltage
*2
"H"
"L"
VOUT
"High-Z"
*1. Refer to *2 in Table 6 in " Electrical Characteristics".
VIN
EN
VSS
Figure 3
8
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.0_00
S-85S0A Series
5. Under voltage lockout function (UVLO)
The S-85S0A Series has a built-in UVLO circuit to prevent the IC from malfunctioning due to a transient status at
power-on or a momentary drop in the supply voltage. When UVLO status is detected, the high side power MOS FET
and low side power MOS FET will turn off, and the SW pin will change to "High-Z". For this reason, switching
operation will stop. The soft-start function is reset if UVLO status is detected once, and is restarted by releasing the
UVLO status.
Note that the other internal circuits operate normally and the status is different from the disabled status.
Also, there is a hysteresis width for avoiding malfunctions due to generation of noise etc. in the input voltage.
6. Thermal shutdown function
The S-85S0A Series has a built-in thermal shutdown circuit to limit overheating. When the junction temperature
increases to 135°C typ., the thermal shutdown circuit becomes the detection status, and the switching operation is
stopped. When the junction temperature decreases to 115°C typ., the thermal shutdown circuit becomes the release
status, and the switching operation is restarted.
If the thermal shutdown circuit becomes the detection status due to self-heating, the switching operation is stopped
and output voltage (VOUT) decreases. For this reason, the self-heating is limited and the temperature of the IC
decreases. The thermal shutdown circuit becomes release status when the temperature of the IC decreases, and
the switching operation is restarted, thus the self-heating is generated again. Repeating this procedure makes the
waveform of VOUT into a pulse-like form. Switching operation stopping and starting can be stopped by either setting
the EN pin to "L", lowering the output current (IOUT) to reduce internal power consumption, or decreasing the ambient
temperature.
Table 8
Thermal Shutdown Circuit
Release: 115°C typ.*1
VOUT Pin Voltage
VOUT
"High-Z"
Detection: 135°C typ.*1
*1. Junction temperature
7. Overcurrent protection function
The S-85S0A Series has a built-in current limit circuit.
The overcurrent protection circuit monitors the current that flows through the low side power MOS FET and limits
current to prevent thermal destruction of the IC due to an overload, magnetic saturation in the inductor, etc.
When a current exceeding the current limit (ILIM) flows through the low side power MOS FET, the current limit circuit
operates and prohibits turning on the high side power MOS FET until the current falls below the low side current limit
(ILIMDET). If the value of the current that flows through the low side power MOS FET falls to the ILIMDET or lower, the
S-85S0A Series returns to normal operation. ILIMDET is fixed at 120 mA typ. in the IC, and ILIM will vary depending on
the external parts to be used.
The relation between ILIM, the inductor value (L), the input voltage (VIN), and the output voltage (VOUT) are shown in
the following expression.
1
(VIN
−
VOUT) × VOUT
VIN
I
LIM = ILIMDET
+
×
2 × L × fSW
9
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S0A Series
Rev.1.0_00
8. Automatic recovery type short-circuit protection function (Hiccup control)
The S-85S0A Series has a built-in automatic recovery type short-circuit protection function for Hiccup control.
Hiccup control is a method for periodically carrying out automatic recovery when the IC detects overcurrent and
stops the switching operation.
8. 1 When over load status is released
<1> Overcurrent detection
<2> Under voltage protection circuit (UVP circuit) detects a drop in the output voltage (VOUT).
<3> 220 μs elapse
<4> Switching operation stop (for 9 ms typ.)
<5> Overload status release
<6> The IC restarts, soft-start function starts.
In this case, it is unnecessary to input an external reset signal for restart.
<7> VOUT reaches VOUT(S) after 1.0 ms typ. elapses.
<1>
<5>
Overload status
Normal load status
I*1
L
I
LIMDET = 120 mA typ.
OUT = 50 mA max.
I
0 A
V
SW
0 V
VOUT(S)
VOUT
V
UVP typ.
0 V
<3>
<7>
1.0 ms typ.
220 s
9.0 ms typ.
<2>
<4>
<6>
*1. Inductor current
Figure 4
8. 2 When over load status continues
<1> Overcurrent detection
<2> The UVP circuit detects a drop in VOUT
.
<3> 220 s elapse
μ
<4> Switching operation stop (for 9 ms typ.)
<5> The IC restarts, soft-start function starts.
<6> The status returns to <2> when over load status continues after 1.25 ms typ. elapses.
<1>
Overload status
I
LIMDET = 120 mA typ.
OUT = 50 mA max.
I*1
L
I
0 A
VSW
0 V
VOUT(S)
VOUT
V
UVP typ.
0 V
<3>
<6>
<3>
220 s
9.0 ms typ.
1.25 ms typ.
220 s
9.0 ms typ.
<2>
<4>
<5>
<2>
<4>
*1. Inductor current
Figure 5
10
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.0_00
S-85S0A Series
9. Pre-bias compatible soft-start function
The S-85S0A Series has a built-in pre-bias compatible soft-start circuit.
If the pre-bias compatible soft-start circuit starts when electrical charge remains in the output voltage (VOUT) as a
result of power supply restart, etc., or when VOUT is biased beforehand (pre-bias status), switching operation is
stopped until the soft-start voltage exceeds the internal feedback voltage, and then VOUT is maintained. If the
soft-start voltage exceeds the internal feedback voltage, switching operation will restart and VOUT will rise to the
output voltage setting value (VOUT(S)). This allows VOUT(S) to be reached without lowering the pre-biased VOUT
.
In soft-start circuits which are not pre-bias compatible, a large current flows as a result of the discharge of the
residual electric charge through the low side power MOS FET when switching operation starts, which could cause
damage, however in a pre-bias compatible soft-start circuit, the IC is protected from the large current when switching
operation starts, and it makes power supply design for the application circuit simpler.
In the S-85S0A Series, VOUT reaches VOUT(S) gradually due to the soft-start circuit.
In the following cases, rush current and VOUT overshoot are reduced.
• At power-on
• When the EN pin changes from "L" to "H".
• When UVLO operation is released.
• When thermal shutdown is released.
• At short-circuit recovery
In addition, the soft-start circuit operates under the following conditions.
The soft-start circuit starts operating after "H" is input to the EN pin and the soft-start wait time (tSSW) = 1.5 ms typ.
elapses. The soft-start time (tSS) is set to 1.0 ms typ.
• At power supply restart (the IC restart)
• At UVLO detection (after UVLO release)
• At thermal shutdown detection (after thermal shutdown release)
• After Hiccup control
Soft-start wait time Soft-start time
Soft-start operation during pre-bias
(tSSW
)
(tSS)
V
EN
VOUT
V
SW
Figure 6
11
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S0A Series
Rev.1.0_00
Typical Circuit
VIN
VOUT
VIN
Error amplifier
CIN
4.7 μF
−
+
+
ON time generation
circuit
Output control circuit
L
VOUT
SW
2.2 μH
U
VP circuit
−
SS
+
Reverse current
detection circuit
COUT
4.7 μF
Reference voltage circuit
Soft-start cicuit
+
−
EN
PVSS
Overcurrent
protection circuit
Thermal shutdown circuit
UVLO cicuit
+
−
VSS
Figure 7
Caution The above connection diagram and constants will not guarantee successful operation. Perform
thorough evaluation using an actual application to set the constants.
12
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.0_00
S-85S0A Series
External Parts Selection
Selectable values and recommended values for external parts are shown in Table 9.
Use ceramic capacitors for CIN and COUT
.
Table 9
Output Capacitor (COUT
Item
Input Capacitor (CIN)
2.2 μF or larger
4.7 μF
)
Inductor (L)
1.5 μH to 10 μH
2.2 μH
Selectable value
Recommended value
4.7 μF to 100 μF
4.7 μF
1. Input capacitor (CIN)
CIN can lower the power supply impedance, average the input current, improve the efficiency and noise tolerance.
Select a capacitor according to the impedance of the power supply to be used. Also take into consideration the DC
bias characteristics of the capacitor to be used.
2. Output capacitor (COUT
)
COUT is used to smooth output voltage. If the capacitance is large, the overshoot and undershoot during load
transient and output ripple voltage can be improved even more. Select a proper capacitor after the sufficient
evaluation under actual conditions.
Table 10 Recommended Capacitors (CIN, COUT) List (at VOUT(S) ≤ 2.5 V)
Withstanding
Manufacturer
Part Number
Capacitance
Dimensions (L × W × H)
Voltage
6.3 V
10 V
Murata Manufacturing Co., Ltd. GRM035R60J475ME15
Murata Manufacturing Co., Ltd. GRJ155R61A106ME12
4.7 μF
10 μF
10 μF
0.6 mm × 0.3 mm × 0.5 mm
1.0 mm × 0.5 mm × 0.5 mm
1.0 mm × 0.5 mm × 0.5 mm
TDK Corporation
C1005X5R0J106M050BC
6.3 V
Table 11 Recommended Capacitors (CIN, COUT) List (at VOUT(S) > 2.5 V)
Withstanding
Manufacturer
Part Number
Capacitance
Dimensions (L × W × H)
Voltage
10 V
Murata Manufacturing Co., Ltd. GRJ155R61A106ME12
10 μF
10 μF
1.0 mm × 0.5 mm × 0.5 mm
1.0 mm × 0.5 mm × 0.5 mm
TDK Corporation
C1005X5R0J106M050BC
6.3 V
3. Inductor (L)
When selecting L, note the allowable current. If a current exceeding this allowable current flows through the inductor,
magnetic saturation may occur, and there may be risks which substantially lower efficiency and damage the IC as a
result of large current.
Therefore, select an inductor so that peak current value (IPK), even during overcurrent detection, does not exceed
the allowable current.
When prioritizing the load response, select an inductor with a small L value such as 2.2 μH. When prioritizing the
efficiency, select an inductor with a large L value such as 10 μH. IPK is calculated using the following expression.
1
(VIN
−
VOUT) × VOUT
VIN
IPK = IOUT
+
×
2 × L × fSW
Table 12 Recommended Inductors (L) List (at VIN ≤ 4.2 V)
Rated
Manufacturer
Part Number
Inductance
Dimensions (L × W × H)
Current
520 mA
2000 mA
800 mA
TAIYO YUDEN CO.,LTD.
MBKK1608T2R2M
2.2 μH
2.2 μH
2.2 μH
1.6 mm × 0.8 mm × 1.0 mm
2.0 mm × 1.2 mm × 1.0 mm
2.0 mm × 1.25 mm × 0.85 mm
Murata Manufacturing Co., Ltd. DFE201210S-2R2M=P2
TDK Corporation MLP2012S2R2MT0S1
Table 13 Recommended Inductors (L) List (at VIN > 4.2 V)
Rated
Manufacturer
Part Number
Inductance
Dimensions (L × W × H)
Current
2000 mA
800 mA
Murata Manufacturing Co., Ltd. DFE201210S-2R2M=P2
TDK Corporation MLP2012S2R2MT0S1
2.2 μH
2.2 μH
2.0 mm × 1.2 mm × 1.0 mm
2.0 mm × 1.25 mm × 0.85 mm
13
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S0A Series
Rev.1.0_00
Board Layout Guidelines
Note the following cautions when determining the board layout for the S-85S0A Series.
• Place CIN as close to the VIN pin and the PVSS pin as possible.
• Make the VIN pattern and GND pattern as wide as possible.
• Place thermal vias in the GND pattern to ensure sufficient heat dissipation.
• Keep thermal vias near CIN and COUT approximately 3 mm to 4 mm away from capacitor pins.
• Large current flows through the SW pin. Make the wiring area of the pattern to be connected to the SW pin small to
minimize parasitic capacitance and emission noise.
• Do not wire the SW pin pattern under the IC.
Total size 1.6 mm × 4.3 mm = 6.9 mm2
Figure 8 Reference Board Pattern
Caution The above pattern diagram does not guarantee successful operation. Perform thorough evaluation
using the actual application to determine the pattern.
Remark Refer to the land drawing of SNT-6A and "SNT Package User's Guide".
14
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.0_00
S-85S0A Series
Precautions
•
•
Mount external capacitors and inductors as close as possible to the IC, and make single GND.
Characteristic ripple voltage and spike noise occur in the IC containing switching regulators. Moreover rush current
flows at the time of a power supply injection. Because these largely depend on the inductor, the capacitor and
impedance of power supply to be used, fully check them using an actually mounted model.
•
The 4.7 μF capacitor connected between the VIN pin and the VSS pin is a bypass capacitor. It stabilizes the power
supply in the IC, and thus effectively works for stable switching regulator operation. Allocate the bypass capacitor
as close to the IC as possible, prioritized over other parts.
•
•
•
Although the IC contains a static electricity protection circuit, static electricity or voltage that exceeds the limit of
the protection circuit should not be applied.
The power dissipation of the IC greatly varies depending on the size and material of the board to be connected.
Perform sufficient evaluation using an actual application before designing.
SII Semiconductor Corporation assumes no responsibility for the way in which this IC is used on products created
using this IC or for the specifications of that product, nor does SII Semiconductor Corporation assume any
responsibility for any infringement of patents or copyrights by products that include this IC either in Japan or in
other countries.
15
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S0A Series
Rev.1.0_00
Characteristics (Typical Data)
1. Example of major power supply dependence characteristics (Ta = +25°C)
1. 1 Current consumption at switching off (ISS1
vs. Input voltage (VIN)
)
1. 2 Current consumption at shutdown (ISSS)
vs. Input voltage (VIN)
500
400
300
200
100
0
100
80
60
40
20
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VIN [V]
VIN [V]
1. 3 Output voltage (VOUT) vs. Input voltage (VIN)
1. 4 Output voltage (VOUT) vs. Input voltage (VIN)
VOUT(S) = 1.2 V
VOUT(S) = 1.8 V
1.230
1.840
1.220
1.210
1.200
1.190
1.180
1.820
1.800
1.780
1.760
1.170
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
IN [V]
VIN [V]
1. 5 Output voltage (VOUT) vs. Input voltage (VIN)
OUT(S) = 2.5 V
V
2.600
2.400
2.200
2.000
1.800
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
IN [V]
1. 6 ON time (tON) vs. Input voltage (VIN)
VOUT(S) = 1.8 V
1. 7 Switching frequency (fSW) vs. Input voltage (VIN)
VOUT(S) = 1.8 V
1.0
0.8
0.6
0.4
0.2
0.0
1.4
1.2
1.0
0.8
0.6
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VIN [V]
VIN [V]
16
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.0_00
S-85S0A Series
1. 8 Soft-start wait time (tSSW) vs. Input voltage (VIN) 1. 9 Soft-start time (tSS) vs. Input voltage (VIN)
2.50
2.00
1.50
1.00
0.50
0.00
2.50
2.00
1.50
1.00
0.50
0.00
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VIN [V]
VIN [V]
1. 10 High side power MOS FET on-resistance (RHFET
vs. Input voltage (VIN)
)
1. 11 Low side power MOS FET on-resistance (RLFET
vs. Input voltage (VIN)
)
800
800
700
700
600
600
500
500
400
400
300
300
200
200
100
100
0
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VIN [V]
VIN [V]
1. 12 High side power MOS FET leakage current (IHSW
vs. Input voltage (VIN)
)
1. 13 Low side power MOS FET leakage current (ILSW
vs. Input voltage (VIN)
)
100
80
60
40
20
100
80
60
40
20
0
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VIN [V]
VIN [V]
1. 14 High level input voltage (VSH) vs. Input voltage (VIN)
1. 15 Low level input voltage (VSL) vs. Input voltage (VIN)
1.2
1.0
0.8
0.6
0.4
0.2
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
IN [V]
VIN [V]
17
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S0A Series
Rev.1.0_00
2. Example of major temperature characteristics (Ta = −40°C to +85°C)
2. 1 Current consumption at switching off (ISS1
vs. Temperature (Ta)
)
2. 2 Current consumption at shutdown (ISSS
)
vs. Temperature (Ta)
500
200
V
DD = 2.2 V
400
300
200
100
0
150
100
V
DD = 5.5 V
V
DD = 2.2 V
V
DD = 3.6 V
V
DD = 3.6 V
V
DD = 5.5 V
50
0
−
40
−25
0
25
50
75 85
−40
−25
0
25
50
75 85
Ta [C]
Ta [C]
2. 3 Output voltage (VOUT) vs. Temperature (Ta)
2. 4 Output voltage (VOUT) vs. Temperature (Ta)
VOUT(S) = 1.2 V
VOUT(S) = 1.8 V
1.230
1.840
V
DD = 2.2 V
1.220
1.210
1.200
1.190
1.180
1.170
V
DD = 2.2 V
V
DD = 5.5 V
V
DD = 3.6 V
1.820
1.800
1.780
1.760
V
DD = 3.6 V
50
V
DD = 5.5 V
25
−
40
−25
0
25
Ta [C]
75 85
−40
−25
0
50
75 85
Ta [C]
2. 5 Output voltage (VOUT) vs. Temperature (Ta)
V
OUT(S) = 2.5 V
2.560
2.540
2.520
2.500
2.480
2.460
2.440
V
DD = 5.5 V
V
DD = 3.6 V
50
40
25
0
25
Ta [C]
75 85
2. 6 ON time (tON) vs. Temperature (Ta)
2. 7 Switching frequency (fSW) vs. Temperature (Ta)
1.2
1.0
1.4
1.2
1.0
0.8
0.6
V
DD = 3.6 V
0.8
0.6
0.4
0.2
0.0
V
DD = 3.6 V
V
DD = 2.2 V
V
DD = 2.2 V
50 75 85
V
DD = 5.5 V
0
V
DD = 5.5 V
25
Ta [C]
−
40
−25
0
50
75 85
−40
−
25
25
Ta [C]
18
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.0_00
S-85S0A Series
2. 8 Soft-start wait time (tSSW) vs. Temperature (Ta)
2. 9 Soft-start time (tSS) vs. Temperature (Ta)
2.50
2.00
1.50
1.00
0.50
0.00
2.50
2.00
1.50
1.00
0.50
0.00
V
DD = 2.2 V
V
DD = 5.5 V
V
DD = 3.6 V
V
DD = 2.2 V
V
DD = 5.5 V
25
VDD = 3.6 V
40
25
0
25
50
75 85
40
0
25
Ta [C]
50
75 85
Ta [C]
2. 10 High side power MOS FET on-resistance (RHFET
vs. Temperature (Ta)
)
2. 11 Low side power MOS FET on-resistance (RLFET
vs. Temperature (Ta)
)
800
800
700
V
DD = 2.2 V
700
600
500
400
300
200
100
0
600
500
400
300
200
100
0
V
DD = 2.2 V
V
DD = 3.6 V
50
V
DD = 3.6 V
50 75 85
VDD = 5.5 V
V
DD = 5.5 V
40 25
0
25
Ta [C]
75 85
40 25
0
25
Ta [C]
2. 12 High side power MOS FET leakage current (IHSW
vs. Temperature (Ta)
)
2. 13 Low side power MOS FET leakage current (ILSW
vs. Temperature (Ta)
)
300
250
200
150
300
250
V
DD = 5.5 V
200
150
100
50
V
DD = 3.6 V
V
DD = 5.5 V
V
DD = 3.6 V
100
50
0
V
DD = 2.2 V
V
DD = 2.2 V
0
−40
−25
0
25
50
75 85
−40
−25
0
25
50
75 85
Ta [C]
Ta [C]
2. 14 High level input voltage (VSH) vs. Temperature (Ta) 2. 15 Low level input voltage (VSL) vs. Temperature (Ta)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
DD = 5.5 V
V
DD = 5.5 V
V
DD = 3.6 V
50
V
DD = 3.6 V
V
DD = 2.2 V
0
V
DD = 2.2 V
25
40
25
25
75 85
−40
−
0
25
Ta [C]
50
75 85
Ta [C]
19
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S0A Series
Rev.1.0_00
2. 16 UVLO detection voltage (VUVLO−) vs. Temperature (Ta)
2. 17 UVLO release voltage (VUVLO+) vs. Temperature (Ta)
2.2
2.1
2.0
1.9
1.8
1.7
1.6
2.2
2.1
2.0
1.9
1.8
1.7
1.6
40
25
0
25
50
75 85
40
25
0
25
50
75 85
Ta [C]
Ta [C]
20
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.0_00
S-85S0A Series
3. Transient response characteristics
The external parts shown in Table 14 are used in "3. Transient response characteristics".
Table 14
Element Name
Inductor
Constant
2.2 μH
10 μF
Manufacturer
Murata Manufacturing Co., Ltd.
TDK Corporation
Part Number
DFE201210S-2R2M=P2
C1005X5R0J106M050BC
C1005X5R0J106M050BC
Input capacitor
Output capacitor
10 μF
TDK Corporation
3. 1 Power-on (VOUT = 1.8 V, VIN = 0 V → 3.6 V, Ta = +25°C)
3. 1. 1 IOUT = 0.1 mA
3. 1. 2 IOUT = 50 mA
1,400
1,200
1,000
800
1,400
1,200
1,000
800
4
3
2
4
3
2
V
IN
V
OUT
1
1
600
400
200
0
600
400
200
0
0
0
I
L
−1
−2
−3
−4
−1
−2
−3
−4
−200
−200
0
1
2
3
4
5
0
1
2
3
4
5
Time [ms]
Time [ms]
3. 2 Transient response characteristics of EN pin
(VOUT = 1.8 V, VIN = 3.6 V, VEN = 0 V → 3.6 V, Ta = +25°C)
3. 2. 1 IOUT = 0.1 mA
3. 2. 2 IOUT = 50 mA
1,400
1,200
1,000
800
1,400
1,200
1,000
800
4
3
2
4
3
2
V
EN
V
EN
V
OUT
V
OUT
1
1
600
400
200
0
600
400
200
0
0
0
I
L
−1
−2
−3
−4
−1
−2
−3
−4
I
L
−200
−200
0
1
2
3
4
5
0
1
2
3
4
5
Time [ms]
Time [ms]
3. 3 Power supply fluctuation (VOUT = 1.8 V, Ta = +25°C)
3. 3. 1 IOUT = 0.1 mA
3. 3. 2 IOUT = 50 mA
VIN = 3.6 V → 4.2 V → 3.6 V
VIN = 3.6 V → 4.2 V → 3.6 V
2.10
2.00
1.90
1.80
1.70
2.10
5
4
3
2
1
5
4
3
2
1
V
IN
2.00
1.90
1.80
1.70
V
IN
V
OUT
V
OUT
0
10
20
30
40
50
0
10
20
30
40
50
Time [ms]
Time [ms]
21
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S0A Series
Rev.1.0_00
3. 4 Load fluctuation (VOUT = 1.8 V, VIN = 3.6 V, Ta = +25°C)
3. 4. 1 IOUT = 0.1 mA → 10 mA → 0.1 mA
3. 4. 2 IOUT = 0.1 mA → 50 mA → 0.1 mA
2.00
1.95
1.90
1.85
1.80
1.75
1.70
2.00
1.95
1.90
1.85
1.80
1.75
1.70
100
100
50
0
50
0
I
OUT
I
OUT
−50
−100
−150
−200
−50
−100
−150
−200
V
OUT
V
OUT
0
10
20
30
40
0
10
20
30
40
Time [ms]
Time [ms]
Reference Data
The external parts shown in Table 15 are used in " Reference Data".
Table 15
Condition
<1>
Inductor (L)
MBKK1608T2R2M (2.2 μH)
TAIYO YUDEN CO.,LTD.
Input Capacitor (CIN)
GRM035R60J475ME15 (4.7 μF) GRM035R60J475ME15 (4.7 μF)
Murata Manufacturing Co., Ltd. Murata Manufacturing Co., Ltd.
Output Capacitor (COUT)
DFE201210S-2R2M=P2 (2.2 μH) C1005X5R0J106M050BC (10 μF) C1005X5R0J106M050BC (10 μF)
<2>
Murata Manufacturing Co., Ltd.
TDK Corporation
TDK Corporation
1. VOUT = 1.2 V (External parts: Condition<1>)
1. 1 Efficiency (η) vs. Output current (IOUT
)
1. 2 Output voltage (VOUT) vs. Output current (IOUT)
100
1.5
80
1.4
VIN = 3.6 V
60
40
20
0
1.3
1.2
1.1
1.0
VIN = 3.6 V
VIN = 5.5 V
VIN = 5.5 V
0.001 0.01
0.1
1
10
100
0.001 0.01
0.1
1
10
100
I
OUT [mA]
IOUT [mA]
2. VOUT = 1.8 V (External parts: Condition<1>)
2. 1 Efficiency (η) vs. Output current (IOUT
)
2. 2 Output voltage (VOUT) vs. Output current (IOUT)
100
2.0
VIN = 3.6 V
80
1.9
1.8
1.7
1.6
1.5
60
40
20
0
VIN = 3.6 V
VIN = 5.5 V
VIN = 5.5 V
0.001 0.01
0.1
1
10
100
0.001 0.01
0.1
1
10
100
I
OUT [mA]
IOUT [mA]
22
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.0_00
S-85S0A Series
3. VOUT = 1.2 V (External parts: Condition<2>)
3. 1 Efficiency (η) vs. Output current (IOUT
)
3. 2 Output voltage (VOUT) vs. Output current (IOUT)
100
1.5
80
1.4
VIN = 5.5 V
60
40
20
0
1.3
1.2
1.1
1.0
VIN = 3.6 V
VIN = 5.5 V
VIN = 3.6 V
0.001 0.01
0.1
1
10
100
0.001 0.01
0.1
1
10
100
I
OUT [mA]
IOUT [mA]
4. VOUT = 1.8 V (External parts: Condition<2>)
4. 1 Efficiency (η) vs. Output current (IOUT
)
4. 2 Output voltage (VOUT) vs. Output current (IOUT)
100
2.0
VIN = 5.5 V
80
1.9
1.8
1.7
1.6
1.5
60
40
20
0
VIN = 3.6 V
VIN = 5.5 V
VIN = 3.6 V
0.001 0.01
0.1
1
10
100
0.001 0.01
0.1
1
10
100
I
OUT [mA]
IOUT [mA]
23
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S0A Series
Rev.1.0_00
Power Dissipation
SNT-6A
Tj = 125C max.
1.0
0.8
B
0.6
A
0.4
0.2
0.0
0
25
50
75
100 125 150 175
Ambient temperature (Ta) [C]
Board
Power Dissipation (PD)
A
B
C
D
E
0.45 W
0.57 W
−
−
−
24
SNT-6A Test Board
No. SNT6A-A-Board-SD-1.0
SII Semiconductor Corporation
1.57±0.03
6
5
4
+0.05
-0.02
0.08
1
2
3
0.5
0.48±0.02
0.2±0.05
No. PG006-A-P-SD-2.1
SNT-6A-A-PKG Dimensions
PG006-A-P-SD-2.1
TITLE
No.
ANGLE
UNIT
mm
SII Semiconductor Corporation
+0.1
-0
ø1.5
4.0±0.1
2.0±0.05
0.25±0.05
+0.1
ø0.5
-0
4.0±0.1
0.65±0.05
1.85±0.05
5°
3
2
5
1
6
4
Feed direction
No. PG006-A-C-SD-1.0
TITLE
SNT-6A-A-Carrier Tape
PG006-A-C-SD-1.0
No.
ANGLE
UNIT
mm
SII Semiconductor Corporation
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. PG006-A-R-SD-1.0
SNT-6A-A-Reel
TITLE
No.
PG006-A-R-SD-1.0
ANGLE
UNIT
QTY.
5,000
mm
SII Semiconductor Corporation
0.52
2
1.36
0.52
1
0.3
0.2
1.
2.
(0.25 mm min. / 0.30 mm typ.)
(1.30 mm ~ 1.40 mm)
0.03 mm
SNT
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package ( 1.30 mm ~ 1.40 mm ).
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
(0.25 mm min. / 0.30 mm typ.)
(1.30 mm ~ 1.40 mm)
1.
2.
SNT-6A-A
-Land Recommendation
TITLE
No. PG006-A-L-SD-4.1
No.
PG006-A-L-SD-4.1
ANGLE
UNIT
mm
SII Semiconductor Corporation
Disclaimers (Handling Precautions)
1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.
2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of
any specific mass-production design.
SII Semiconductor Corporation is not responsible for damages caused by the reasons other than the products or
infringement of third-party intellectual property rights and any other rights due to the use of the information described
herein.
3. SII Semiconductor Corporation is not responsible for damages caused by the incorrect information described herein.
4. Take care to use the products described herein within their specified ranges. Pay special attention to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
SII Semiconductor Corporation is not responsible for damages caused by failures and/or accidents, etc. that occur
due to the use of products outside their specified ranges.
5. When using the products described herein, confirm their applications, and the laws and regulations of the region or
country where they are used and verify suitability, safety and other factors for the intended use.
6. When exporting the products described herein, comply with the Foreign Exchange and Foreign Trade Act and all
other export-related laws, and follow the required procedures.
7. The products described herein must not be used or provided (exported) for the purposes of the development of
weapons of mass destruction or military use. SII Semiconductor Corporation is not responsible for any provision
(export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons,
missiles, or other military use.
8. The products described herein are not designed to be used as part of any device or equipment that may affect the
human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems,
combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment,
aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle
use or other uses. Do not use those products without the prior written permission of SII Semiconductor Corporation.
Especially, the products described herein cannot be used for life support devices, devices implanted in the human
body and devices that directly affect human life, etc.
Prior consultation with our sales office is required when considering the above uses.
SII Semiconductor Corporation is not responsible for damages caused by unauthorized or unspecified use of our
products.
9. Semiconductor products may fail or malfunction with some probability.
The user of these products should therefore take responsibility to give thorough consideration to safety design
including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing
injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction.
The entire system must be sufficiently evaluated and applied on customer's own responsibility.
10. The products described herein are not designed to be radiation-proof. The necessary radiation measures should be
taken in the product design by the customer depending on the intended use.
11. The products described herein do not affect human health under normal use. However, they contain chemical
substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips
may be sharp. Take care when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products described herein, comply with the laws and ordinances of the country or region where
they are used.
13. The information described herein contains copyright information and know-how of SII Semiconductor Corporation.
The information described herein does not convey any license under any intellectual property rights or any other
rights belonging to SII Semiconductor Corporation or a third party. Reproduction or copying of the information
described herein for the purpose of disclosing it to a third-party without the express permission of SII Semiconductor
Corporation is strictly prohibited.
14. For more details on the information described herein, contact our sales office.
1.0-2016.01
www.sii-ic.com
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