关闭背景特效

SI57X-EVB [SILABS]

Si57X/598/599 ANY FREQUENCY I2C PROGRAMMABLE XO/VCXO EVALUATION BOARD; Si57X /五百九十九分之五百九十八任何频率I2C可编程XO / VCXO评估板

SI57X-EVB


元器件型号：	SI57X-EVB
生产厂家：	SILICON LABORATORIES
描述和应用：	Si57X/598/599 ANY FREQUENCY I2C PROGRAMMABLE XO/VCXO EVALUATION BOARD Si57X /五百九十九分之五百九十八任何频率I2C可编程XO / VCXO评估板石英晶振压控振荡器
PDF文件：	总34页 (文件大小：823K)
下载文档：	下载PDF数据表文档文件
型号参数：SI57X-EVB参数

SI-58

Supports 2x DDR3 1333MHz SO-DIMM, Max. 16GB

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0 ETC2

SI581DJ

Buffer Amplifier, 1 Func, BIPolar, PDIP8,

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0 VISHAY

SI581DY

Buffer Amplifier, 1 Func, BIPolar, PDSO8,

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0 VISHAY

SI-58-2510

Supports 2x DDR3 1333MHz SO-DIMM, Max. 16GB

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0 ETC2

SI582DJ

Operational Amplifier, 1 Func, 9000uV Offset-Max, BIPolar, PDIP8, PLASTIC, DIP-8

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0 VISHAY

SI582DY

Operational Amplifier, 1 Func, 9000uV Offset-Max, BIPolar, PDSO8, SOIC-8

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0 VISHAY

SI584DJ

Buffer Amplifier, 4 Func, BIPolar, PDIP14,

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0 VISHAY

SI584DY

Buffer Amplifier, 4 Func, BIPolar, PDSO14,

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0 VISHAY

SI5853CDC-T1-E3

TRANSISTOR 2900 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, LEADLESS, 1206-8, CHIPFET-8, FET General Purpose Small Signal

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0 VISHAY

SI5853CDC-T1-GE3

TRANSISTOR 2900 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1206-8, CHIPFET-8, FET General Purpose Small Signal

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0 VISHAY

SI5853DC

P-Channel 1.8-V (G-S) MOSFET With Schottky Diode

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37 VISHAY

SI5853DC

P-Channel 1.8-V (G-S) MOSFET With Schottky Diode

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37 VISHAY

SI5853DC

P-Channel 1.8-V (G-S) MOSFET With Schottky Diode

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460 VISHAY

SI5853DC-E3

TRANSISTOR 2700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, DIE-8, FET General Purpose Small Signal

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0 VISHAY

SI5853DC-T1

P-Channel 1.8-V (G-S) MOSFET With Schottky Diode

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187 VISHAY

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