SA5901_技术文档

SA5901

4•CHANNEL MOTOR DRIVER FOR PORTABLE CD PLAYER

DESCRIPTION

SA5901 is suitable for portable CD player with 4•ch H bridge drivers

and DC/DC converter control circuit. Because of the small package QFP•

44, it is most suitable for small equipment.

QFP44•10 x10•0.8

FEATURES

* Four channels of H•bridge drivers are contained.

* DC/DC converter control circuit is contained.

* Reset circuit

LQFP44•10 x10•0.8

* Reduced voltage detection circuit.

* Battery charging circuit

* General purpose operational amplifier is contained

* Low power consumption

ORDERING INFORMATION

* Thermal shutdown circuit

Device

Package

* QFP•44 package

SA5901A QFP44•10 X 10•0.8

SA5901L LQFP44•10 X 10•0.8

<H•bridge driver>

* Load drive voltage can be processed by PWM control throug

external component.

* Constant current battery

charging system allows varying

current value through

* Excellent gain can be obtained by a voltage feedback circuit.

* Mute function is disabled for ch1, ch2 and ch3/ch4 respectively.

* Starter and power off function

resistance.

* Soft•start function and short•circuit protection function

* Self•advancing oscillation and clock synchronization are available.

* It is separated from any other

blocks and it can be operated

independently.

* Reset voltage is interlocked with the set voltage of DC/DC converter.

* Inversion output pin for reset output is available.

* Battery charger and dry battery allow to switch “Empdtey”tection

level.

* A charging power transistor is

contained.

* Independent thermal shutdown

circuit is contained.

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.3

2006.02.27

Http: www.silan.com.cn

Page 1 of 24

SA5901

BLOCK DIAGRAM

41

35

34

36 32 31 30 29 28 27 26 25 24 23

21

MUTE2

PSW

Max.

Detection

4•ch H Bridge Driver

37

MUTE34

IN1

19

START

OFF

39

40

22

20

System

On/Off

IN2

IN3

IN4

Pre Amp

RCHG

SEL

17

18

33

42

43

Charge &

Voltage DET

PREGND

PWMFIL

OPOUT

SPRT

13

15

12

Over Voltage

44

10

16

VSYS2

VSYS1

• +

Triangle

Wave

DC/DC

Convertor

N.C

VREF

2

3

4

5

6

7

8

9

38 11 14

1

ABSOLUTE MAXIMUM RATING (Tamb=25°C, unless otherwise specified)

Characteristic

Supply voltage

Symbol

Ratings

Unit

V

CC

13.5

500

Driver output current

IO

mA

mW

°C

Power dissipation

P

D

625 (note)

•30~85

•55~150

Operating temperature range

Storage temperature range

T

opr

T

stg

°C

Note: derating is done at 5mW/°C for operating above Tamb=25°C.

RECOMMENDED OPERATING CONDITION

Characteristics

Symbol

Min.

2.7

••

Typ.

3.2

Max.

5.5

Unit

Control circuit power supply voltage

Pre•driver power supply voltage

H•bridge power supply voltage

Power unit power supply voltage

V

SYS1

3.2

5.5

SYS2

HVCC

BATT

PWM

2.4

BATT

8.0

V

1.5

3.0

•10

V

Charging circuit power supply voltage CHGVCC

Ambient temperature

4.5

8.0

V

T

amb

2.5

70

°C

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.3

2006.02.27

Http: www.silan.com.cn

Page 2 of 24

SA5901

ELECTRICAL CHARACTERISTICS (Unless otherwise specified ,Tamb=25°C, BATT = 2.4V ,

VREF=1.6V,VSYS1=VSYS2=3.2V, CHGVCC=0V,fCLK=88.2KHz)

Test

Characteristics

Common section

Symbol

Test conditions

Min. Typ. Max. Unit

circuit No

BATT=9V,

=V

Test

1

BATT stand•by current

I

••

0 3

mA

ST

V

=V =0V

REF

circuit 1

SYS1

SYS2

Test

2

BATT supply current at no•load

VSYS1 supply current at no•load

I

HV=0.45V, MUTE34=3.2V ••

2.54.0 mA

3.34.5 mA

4.15.5 mA

0.652.0 mA

BAT

CC

circuit 1

HV =0.45V,

Test

3

CC

I

••

SYS1

SYS2

MUTE34=3.2V, EI=0V

circuit 1

Test

4

VSYS2 supply current at no•load

CHGVCC supply current at no•

I

HV =0.45V, MUTE34=3.2V ••

CC

circuit 1

CHGV =4.5V,

Test

5

CC

ICGV

••

CC

load

R

T=OPEN

OU

circuit 1

H•bridge driver section

Test

6

GVC134

GVC2

12

14

16

dB

circuit 2

Voltage CH1,3,4 gain CH2

Gain error by polarity

Test

6

21.5 23.5 24.5 dB

circuit 2

Test

DGVC

•2

9

0

2

1113

7.5 9

••

dB

7

8

circuit 2

Test

RIN134 IN=1.7 and 1.8

RIN2

kW

V

IN pin CH1,3,4 input resistance

CH2

circuit 2

Test

6

8

circuit 2

Test

R =8W,

HV=BATT=4V,

CC

L

Maximum output voltage

V

1.9 2.1

9

OUT

SATL

SATU

IN=0•3.2V

circuit 2

Test

Lower transistor saturated

voltage

V

I =•300mA, IN=0 and 3.2V

O

••

240400 mV

10

11

12

13

14

circuit 2

Test

Upper transistor saturated

voltage

V

I =300mA, IN= 0 and 3.2V

O

circuit 2

Test

Input offset voltage

V

OI

•8

0

8

mV

circuit 2

Test

V

OO134

V

REF

=IN=1.6V

•50

•130

•10

50mV

130mV

10mV

Output CH1,3,4 offset voltage

CH2

circuit 2

Test

V

OO2

circuit 2

Test

Dead zone

V

DB

circuit 2

(To be continued)

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.3

2006.02.27

Http: www.silan.com.cn

Page 3 of 24

SA5901

(Continued)

Test

Characteristics

Symbol

Test conditions

Min. Typ. Max. Unit

circuit No

Test

15

BRAKE1 ON threshold voltage

BRAKE1 OFF threshold voltage

MUTE2 ON threshold voltage

V

IN1=1.8V

2.0

••

•• V

BRON

circuit 2

Test

16

V

IN1=1.8V

••

0V.8

BROFF

circuit 2

Test

17

V

IN2=1.8V

2.0

••

•• V

M2ON

circuit 2

Test

18

MUTE2 OFF threshold voltage

MUTE34 ON threshold voltage

MUTE34 OFF threshold voltage V

V

IN2=1.8V

••

0V.8

M2OFF

circuit 2

Test

19

V

IN3=IN4=1.8V

IN1=IN2=IN3=IN4=1.8V

••

0V.8

M34ON

M34OFF

REFON

REFOFF

circuit 2

Test

20

2.0

1.2

••

•• V

circuit 2

Test

21

VREF ON threshold voltage

VREF OFF threshold voltage

V

•• V

circuit 2

Test

22

V

IN1=IN2=IN3=IN4=1.8V

••

0V.8

circuit 2

BRAKE 1pin. The curr

Test

23

BRAKE1 break current

I

difference between ‘H’ and 4

‘L’.

••

10mA

BRAKE1

circuit 2

PWM Power supply driving section

Test

24

PSW sink current

I

IN1=2.1V

10

13

17 mA

PSW

circuit 2

Test

25

HVCC level shift voltage

HVCC leak current

V

IN1=1.8V, HVCC•OUT1F

0.35 0.45 0.55

V

SHIF

circuit 2

HV =9V,

V

SYS1

•

Test

26

CC

I

••

0 5

mA

MLK

V =BATT=0V

SYS2

circuit 2

Test

27

PWM amplifier transfer gain

GPWM IN1=1.8V, HV =1.2~1.4V

1/601/50 1/40 1/kW

CC

circuit 2

DC/DC converter section

Error amplifier section

Test

28

VSYS1 pin threshold

V

SITH

3.05 3.20 3.35

V

circuit 1

Test

29

E0 pin output voltage H

V

EI=0.7V, I =•100mA

1.4 1.6

••

V

EOH

O

circuit 1

Test

30

E0 pin output voltage L

Short•circuit protection

SPRT pin voltage (normal)

V

EI=1.3V, I=100mA

••

0

0V.3

EOL

O

circuit 1

Test

31

V

EI=1.3V

••

V0.1

SPR

circuit 1

(To be continued)

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REV:1.3

2006.02.27

Http: www.silan.com.cn

Page 4 of 24

SA5901

(Continued)

Test

Characteristics

Symbol

Test conditions

Min. Typ. Max. Unit

circuit No

Test

32

SPRT pin current 1 E0=H

SPRT pin current 2 OFF=L

I

EI=0.7V

6

1016

32

mA

SPR1

SPR2

circuit 1

Test

33

EI=1.3V, OFF=0V

12

20

circuit 1

SPRT

current

3

(over•

Test

34

I

EI=1.3V, BATT=9.5V

32

SPR3

voltage)

circuit 1

Test

35

SPRT pin impedance

RSPR

175 220 265 kW

circuit 1

Test

36

SPRT pin threshold voltage

V

EI=0.7V, CT=0V

BSEN pin voltage

1.10 1.20 1.30

8.0 8.4 9.0

V

SPTH

circuit 1

Test

37

Over•voltage protection detect

V

HVPR

circuit 1

Transistor driving section

BATT=CT=1.5V

Test

38

SW pin output voltage 1H

VSW1H VSYS1=VSYS2=0V

IO=2mA, at starter

0.78 0.98 1.13

1.0 1.50 ••

V

circuit 1

CT=0V, IO=•10mA, EI=0.7V,

Test

39

SW pin output voltage 2H

SW pin output voltage 2L

VSW2H

V

SPRT=0V

circuit 1

Test

40

VSW2L CT=2V, IO=10mA

••

0.30.45

circuit 1

CT=470pF,

Test

41

SW pin oscillating frequency 1

f

VSYS1=VSYS2=0V,

at starter

65

80

70

95 KHz

82 KHz

SW1

circuit 3

Test

42

SW pin oscillating frequency 2

SW pin oscillating frequency 3

SW pin minimum pulse width

f

CT=470pF, CLK=0V

CT=470pF

60

••

SW2

SW3

circuit 3

Test

88.2 ••

KHz

43

44

circuit 3

Test

CT=470pF,

sweep

E0=®0.50.7V

TSWMIN

0.01 ••

0.6Usec

circuit 3

CT=470pF,

Test

circuit 3

Test

Pulse duty at start

DSW1

DSW2

40

70

65

50

80

75

60

90

85

%

45

46

47

VS

=V

=0V

YS1

SYS2

EI=0.7V,

CLK=0V

CT

Max. pulse duty at seld•runing

circuit 3

Test

Max.

pulse

duty

at

DSW3 EI=0.7V, CT=470pF

synchronization

circuit 3

Dead time section

Test

circuit 1

Test

DEAD pin impedance

RDEAD

52

65

78 KW

48

49

DEAD pin output voltage

V

DEAD

0.78 0.88 0.98

V

circuit 1

(To be continued)

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.3

2006.02.27

Http: www.silan.com.cn

Page 5 of 24

SA5901

(Continued)

Test

Characteristics

Symbol

Test conditions

Min. Typ. Max. Unit

circuit No

Interface section

V

Test

50

SYS

OFF pin threshold voltage

V

EI=1.3V

••

75

••

V

OFTH

circuit 1

1•2.0

Test

51

OFF pin bias current

I

OFF=0V

95 115 mA

OFF

circuit 1

BATT

Test

52

START pin ON threshold voltage V

V

=V

=0V, CT=2V

••

V

•• V

mA

STATH1 SYS1

SYS2

•1.0

circuit 1

START pin OFF threshold

BAT

Test

53

V

=V

••

16

••

STATH2 SYS1

SYS2

voltage

T•0.3

circuit 1

Test

54

START pin bias current

I

START=0V

13

2.0

••

19

START

circuit 1

Test

55

CLK pin threshold voltage H

CLK pin threshold voltage L

V

•• V

CLKTHH

circuit 3

Test

56

V

••

0V.8

CLKTHL

circuit 3

Test

57

CLK pin bias current

Starter circuit section

Starter switching voltage

I

CLK=3.2V

••

m1A0

CLK

circuit 1

V =V

SYS1

=0V® 3.2V,

SYS2

Test

58

V

STNM

2.3 2.5 2.7

V

START=0V

circuit 1

Starter switching hysteresis

width

Test

59

V

SNHS

START=0V

130 200 300 mV

circuit 1

Test

60

Discharge release voltage

Empty detection section

Empty detection voltage 1

V

1.63 1.83 2.03

V

DIS

circuit 1

Test

61

V

=0V

2.1 2.2 2.3

1.7 1.8 1.9

V

EMPT1

SEL

circuit 3

Test

62

Empty detection voltage 2

Empty detection hysteresis width 1

Empty detection hysteresis width 2

EMP pin output voltage

I

=•2mA

EMPT2 SEL

circuit 3

Test

63

V

SEL

=0V

25

••

50 100 mV

EMHS1

circuit 3

Test

64

I

=•2mA

EMHS2 SEL

circuit 3

Test

65

V

EMP

I =1mA, BSEN=1V

O

••

0V.5

m1A.0

kW

circuit 3

Test

66

EMP pin output leak current

BSEN pin input resistance

I

BSEN=2.4V

••

EMPL

circuit 3

Test

67

RBSEN V

=0V

17 2.3 27

SEL

circuit 3

(To be continued)

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.3

2006.02.27

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Page 6 of 24

SA5901

(Continued)

Test

Characteristics

Symbol

Test conditions

=V =0V,

Min. Typ. Max. Unit

circuit No

V

Test

68

SYS1

SYS2

BSEN pin input leak current

SEL pin detection voltage

SEL pin detection current

I

••

1.5

•2

••

m1A.0

BSENL

BSEN=4.5V

=BATT•SEL,

circuit 3

V

Test

69

SELTH

V

SELTH

••

•• V

BSEN=2V

circuit 3

Test

70

I

••mA

SELT

circuit 3

Reset circuit section

VSYS1 reset threshold voltag

ratio

Ratio of VSYS1 ovltage and

error•amp threshold voltage

Test

71

HSRT

85

25

90

95

%

circuit 3

Test

72

Reset detection hysteresis width V

50 100 mV

RSTHS

circuit 3

Test

73

RESET pin output voltage

RESET pin pull up resistance

AMUTE pin output voltage 1

AMUTE pin output voltage 2

V

I =1mA, V

=V

=2.8V ••

72

••

0V.5

RST

O

SYS1

SYS2

circuit 3

Test

74

RRST

90 108 kW

circuit 3

IO=•1mA,

BAT

Test

75

V

•• BATT

V

AMT1

VSYS1=VSYS2=2.8V

IO=•1mA, V =V

T•0.4

circuit 3

=0V, BAT

T•0.4

Test

76

SYS1

SYS2

AMT2

START=0V

circuit 3

Test

77

AMUTE pin pull down resistance RAMT

77

95 113 kW

circuit 3

Operational amplifier section

Test

78

Input bias current

I

••

•5.5

3.0

••

3n0A0

5.5mV

•• V

BIAS

circuit 1

Test

79

Input offset voltage

V

0

OIOP

circuit 1

Test

80

High level output voltage

Low level output voltage

Output drive current (source)

Output drive current (sink)

Open loop voltage gain

Slew rate

V

OHOP

R =OPEN

••

L

circuit 1

Test

81

V

R =OPEN

L

••

0V.2

OLOP

circuit 1

Test

82

V

Output short to GND by 50W ••

•3 •1

••

mA

SOU

circuit 1

Output short to VSYS

Test

I

0.4 0.7

mA

83

84

85

SIN

50W

circuit 1

Test

GVO

SR

IN=•75dBV, f=1kHz

••

70 ••

dB

circuit 1

Test

0.5 •• V/m

sec

circuit 1

(To be continued)

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.3

2006.02.27

Http: www.silan.com.cn

Page 7 of 24

SA5901

(Continued)

Test

Characteristics

Symbol

Test conditions

Min. Typ. Max. Unit

circuit No

Charging circuit section

CHGV =4.5V,

Test

86

CC

RCHG pin bias voltage

V

RCHG

0.71 0.81 0.91

V

RCHG=1.8kW

circuit 1

CHGV =4.5V, RCHG=0.5

Test

87

CC

RCHG pin output resistance

SEL pin leak current 1

RRCHG

0.75 0.95 1.20 kW

and 0.6V

circuit 1

CHGV =4.5V,

Test

88

CC

I

••

m1A.0

V

SELLK

RCHG=OPEN

circuit 1

CHGV =0.6V, RCHG=1.8

Test

89

CC

SEL pin leak current 2

kW

circuit 1

CHGV =4.5V, I =300mA,

Test

90

CC

O

SEL pin saturated voltage

V

0.451.0

SELCG

RCHG=0W

circuit 1

This product is not designed for protection against radioactive rays.

PIN CONFIGURATIONS

33 32 31 30 29 28 27 26 25 24 23

AMUTE 34

EMP 35

22 IN1

21 MUTE2

20 IN2

HVCC 36

PSW 37

19 MUTE34

18 IN4

CLK 38

START 39

OFF 40

17 IN3

SA5901

16 VREF

15 VSYS2

14 OP+

CHGVCC 41

SEL 42

PREGND 43

PWMFIL 44

13 OPOUT

12 VSYS1

1

2

3

4

5

6

7

8

9

10 11

PIN DESCRIPTION

PIN No.

Symbol

Description

1

2

3

4

BSEN

BATT

Battery voltage monitor pin

Battery power supply input pin

Cassette detection output pin

Dead•time setting pin

RESET

DEAD

(To be continued)

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.3

2006.02.27

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Page 8 of 24

SA5901

(Continued)

PIN No.

Symbol

SW

Description

5

Booster transistor drive pin

Error amplifier output pin

Error amplifier input pin

6

EO

7

EI

8

SPRT

CT

Short•circuit protection setting pin

Triangular wave output pin

Not connected

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

40

41

42

43

44

NC

OP•

Operational amplifier negative input pin

Control circuit power supply input pin

Operational amplifier output pin

Operational amplifier positive input pin

Pre•driver power supply input pin

Reference power supply input pin

CH3 control signal input pin

CH4 control signal input pin

CH3/CH4 mute pin

VSYS1

OPOUT

OP+

VSYS2

VREF

IN3

IN4

MUTE34

IN2

CH2 control signal input pin

CH2 mute pin

MUTE2

IN1

CH1 control signal input pin

CH1 brake pin

BRAKE1

OUT4R

OUT4F

OUT3R

OUT3F

POWGND

OUT2F

OUT2R

OUT1F

OUT1R

RCHG

AMUTE

EMP

CH4 negative output

CH4 positive output

CH3 negative output

CH3 positive output

Power unit power supply ground

CH2 positive output

CH2 negative output

CH1 positive output

CH1 negative output

Charging current setting pin

Reset inversion output pin

‘Empty’ detection output pin

h•bridge power supply input pin

PWM transistor drive pin

HVCC

PSW

CLK

External clock synchronization input pin

Boost DC/DC converter starting pin

Boost DC/DC converter OFF pin

Charging circuit power supply input pin

‘Empty’ detection level switching pin

Pre•unit power supply ground pin

PWM phase compensation pin

START

OFF

CHGVCC

SEL

PREGND

PWMFLL

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.3

2006.02.27

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Page 9 of 24

SA5901

FUNCTION DESCRIPTION

H•bridge driver

(Gain setting)

Driver input resistance is 11kW (typ.) for CH1, CH3 and CH4 and 7.5 kW for CH2.

Calculate driver gain with the under•mentioned expression and set it.

55K

GV=20log|

| (dB)

Ch1, Ch3, Ch4

Ch2

11K+R

110K

7.5K+R

The power supply of drive output stage is HVCC pin (36•pin) and that of pre•drive circuit is VSYS2 pin (15•pin).

Attach by•pass capacitor (approximately 0.1mF) to the legs of this IC between the power supplies.

(Mute function)

Brake function and mute function are assigned to CH1 and other channels of the four channels respectively.

When BRAKE1 pin (23•pin) has been set to “H”, the output of CH1 becomes “L” for both pin 31 and pin 32, and

enters a brake mode.

When MUTE2 pin (21•pin) has been set to “H”, the output of CH2 is muted.

When MUTE34 pin (19•pin) has been set to “L”, the output of CH3 and that of CH4 are muted simultaneously.

(VREF drop mute)

When the voltage impressed to VREF pin (16•pin) is 1.0V (typ.) orless, impedance of driver output becomes

‘high”.

(Thermal shutdown)

When the chip temperature has been 150°C(typ.), the output current is cut.

When the chip temperature has dropped to 120°C(typ.), the output current begins to flow.

PWM power supply drive unit

This unit detects a maximum output level of drivers of four channels and performs the PWM supply of load

drive power supply (36•pin). This unit uses PNP transistor, coil, schottky diode and capacitor as external

component.

33

10P

47

SBD

0.1

47

2200P 100K

44

PWMFIL

37

PSW

36

HVCC

DC/DC converter

(Output voltage)

Booster circuit of 3.2V(typ.) can be configured with external components. This voltage varies depending on

addition of external components. How to set the voltage is as follows:

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

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Page 10 of 24

SA5901

R1×R3

R2 ×R4

+

R1+R3 R2 +R4

R2 ×R4

VSYS1= 1.20 x

(V)

R2 +R4

(Short•circuit protection function)

When the output (6•pin) of error amplifier is “H”, if the voltage of SPRT pin (8•pin) has reached 1.2V (typ.) upon

charging the pin, switching of SW pin (5•pin) is disabled. Time to disable switching depends on a capacitor of the

SPRT pin (8•pin) and it can be calculated by the under•mentioned expression:

VTH

ISPRT

t = CSPRT x

(sec) (VTH = 1.20V,ISPRT = 10ȝA)

(Soft•start function)

The soft•start is functioned by putting a capacitor between DEAD pin (4•pin) and GND. MAX duty can be

changed by attaching resistance to 4•pin.

t=CDEAD X R (sec) (R=65kW)

(Power•off operation)

SPRT pin (8•pin) is charged by setting OFF pin (40•pin) to “L”. Then, switching of SW pin (5•pin) is terminated

when the voltage of the SPRT pin (8•pin) has reached 1.2V (typ.). time to disable switching depends on a

capacitor of the SPRT pin (8•pin) and it can be calculated by the under•mentioned expression:

VTH

IOFF

t=CSPRT x

(sec) (VTH = 1.20V,IOFF = 20uA)

(Over•voltage protection operation)

When the voltage impressed to BSEN pin (1•pin) has been 8.4V (typ.), SPRT pin (8•pin) is charged. Then,

switching of SW pin (5•pin) is terminated when the voltage of the SPRT pin (8•pin) has reached 1.2V (typ.). time

to disable switching depends on a capacitor of the SPRT pin (8•pin) and it can be calculated by the under•

mentioned expression:

VTH

IHV

t=CSPRT x

(sec) (VTH = 1.20V,IHV = 20uA)

“Empty” detector unit

When the voltage impressed to BSEN pin (1•pin) has been the detecting voltage or less, EMP pin (35•pin) varies

from “H” to “L” (open collector output). Hysteresis of 50mV (typ.) set to the detecting voltage to prevent the output

chattering. The detecting voltage varies depending on SEL pin (42•pin) as follows:

SEL pin

L

Detect voltage

2.2V (Typ.)

Return voltage

2.25V (Typ.)

1.85V (Typ.)

High•2

1.8V (Typ.)

Reset circuit

Upon 90% (typ.) of DC/DC converter output voltage, RESET pin (3•pin) varies from “L” to “H” and AMUTE pin

(34•pin) changes from “H” to “L”. Hysteresis of 50mV(typ.) set to the reset voltage to prevent the output chattering.

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

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2006.02.27

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Page 11 of 24

SA5901

Charging circuit

The power supply of the charging unit is CHGVCC pin (41•pin) and it is independent of any other circuit.

Charging current is set by the resistance between RCHG pin (33•pin) and GND. The charging current takes

constant current through SEL pin (42•pin).

This circuit has a private thermal shutdown circuit. When the chip temperature has been°C15(0typ.), the

charging current is cut. When the chip temperature has dropped to 1°2C0(typ.), the charging current begins to

flow.

TEST CIRCUIT (1)

Table of test circuit 1 switches position

Measuring

SW no

no.

1

••

2

••

3

••

A

4

••

B

••

B

5

••

6

••

7

8

••

B

••

9

••

10

••

11

••

A

12

••

13

••

14

••

2

••

3

••

4

••

5

••

28

29

30

••

(To be continued)

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REV:1.3

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Http: www.silan.com.cn

Page 12 of 24

SA5901

(Continued)

Measuring

no.

31

SW no

1

••

A

••

A

••

2

••

A

••

A

••

A

••

3

••

4

B

••

B

••

B

••

5

••

B

••

B

••

A

••

6

••

B

••

7

8

••

A

C

B

C

D

C

••

9

••

B

C

A

B

••

10

••

A

••

11

••

C

B

A

C

B

12

••

A

••

A

••

A

••

13

••

A

••

A

••

14

••

A

B

••

B

C

A

B

••

32

33

34

35

36

37

38

39

40

48

49

50

51

52

53

54

57

58

59

60

78

79

80

81

82

83

84

85

86

87

88

89

90

••: Switch open.

Supplementary explanation of test circuit 1.

No. 1 Measure IBAT.

No. 2 Measure IBAT

No.3 Measure ISYS1

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

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2006.02.27

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Page 13 of 24

SA5901

No.4 Measure ISYS2

No.5 Measure ICHGVCC.

No. 28 VSYS1 voltage when E0 pin varies from “H” to “L” upon increasing VSYS1.

No. 29 E0 pin voltage when 100mA has been taken from the E0 pin.

No. 30 E0 pin voltage when 100mA has flowed into the E0 pin

No. 31, 32, 33 &34 measure SPRT pin voltage

No. 35 Current flowing when 0.5V has been impressed to SPRT terminal shall be I1, and current flowing when

0.6V has been impressed shall be I2.

0.1V

I2- I1

RSPR=

(ȍ)

No. 36 SPRT pin voltage when SW pin varies from “H” to “L” upon increasing the SPRT voltage.

No. 37 BSEN pin voltage when SPRT pin varies form “L” to “H” upon increasing BSEN voltage and BATT

voltage.

No. 38 SW pin voltage when 2mA has been taken from the SW pin. (START=0V)

No. 39 SW pin voltage when 10mA has been taken from the SW pin. (CT=SPRT=0V, EI=0.7V)

No. 40 SW pin voltage when 10mA has flowed into the SW pin. (CT=2V)

No. 48 DEAD pin voltage when 2mA has been taken from the DEAD pin shall be DEAD1, and DEAD pin

voltage when 4mA has been taken shall be DEAD2.

DEAD1- DEAD1

(W)

RDEAD =

2ȝA

No. 49 DEAD pin voltage upon IDEAD=0mA.

No. 50 OFF pin voltage when SPRT pin varies from “L” to “H” upon decreasing the OFF pin.

No. 51 OFF pin outgoing current upon OFF=0V.

No. 52 START pin voltage when SW pin varies from “L” to “H” upon decreasing the START pin.

No. 53 SW pin shall be “L” when voltage of BATT•0.5V has been impressed to START pin.

No. 54 START pin outgoing current upon START=0V

No. 57 CLK pin incoming current upon CLK=3.2V

No. 58 & 59 VSYS1 voltage when SW pin varies from “L” to “H” upon increasing VSYS1 voltage. The voltage

width until SW pin varies “H” to “L” upon decreasing VSYS1 from that voltage shall be hysteresis width.

No. 60 VSYS1 voltage when dead pin varies from “L” to “H” upon increasing VSYS1 voltage.

No. 78 Calculated from voltage at both ends of RNF=1MW.

No. 79 Voltage between OP• and OP+ of RNF=0W.

No. 80 &81 DC voltage at OPOUT pin in inversion amplifier configuration of RNF=20kW.

No. 82 Calculated voltage at both ends of 50W when short•circuiting OPOUT pin to GND, grounding , with 50W

at RNF=0W.

No. 83 Calculated voltage at both ends of 50W when short•circuiting OPOUT pin to VSYS2, high voltage, with

50W at RNF=0W.

No. 85

No. 86 Measure RCHG pin voltage when 1.8kW has been impressed to RCHG pin and GND.

No. 87 Current flowing from this pin when 0.5V has been impressed to RCHG pin shall be IRC1, and current

when 0.6V has been impressed shall be IRC2.

0.1V

RRCHG =

(ȍ)

IRC2 - IRC1

No. 88 & 89 Measure leak current of SEL pin.

No. 90 Measure SEL pin voltage when 300mA has been flowed into the SEL pin.

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.3

2006.02.27

Http: www.silan.com.cn

Page 14 of 24

SA5901

TEST CIRCUIT (2)

Table 1/2 of test circuit 2 switches position

Measuring no.

SW no

1

••

2

••

B

••

B

••

B

••

B

••

3

••

B

••

B

••

B

••

B

4

••

B

••

B

••

B

••

B

••

5

B

••

B

••

B

••

B

••

6

B

7

B

8

B

9

10

••

CH1F,R

CH2F,R

CH3F,R

CH4F,R

CH1

••

6

7

8

9

CH2

Ch3

CH4

CH1

CH2

CH3

CH4

CH1F,R

CH2F,R

CH3F,R

CH4F,R

(To be continued)

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.3

2006.02.27

Http: www.silan.com.cn

Page 15 of 24

SA5901

(Continued)

SW no

Measuring no.

1

••

2

••

B

••

B

••

A

••

B

••

B

••

B

••

B

••

3

••

B

••

B

••

A

••

B

••

B

••

B

••

B

4

••

B

••

B

••

A

••

B

••

B

••

B

••

5

B

••

B

••

A

••

B

••

B

••

B

••

6

C

A

C

A

C

A

C

A

C

A

C

A

C

A

C

A

••

B

7

A

C

A

C

A

C

A

C

A

C

A

C

A

C

A

C

••

B

8

B

••

B

9

10

••

CH1F

CH1R

CH2F

••

CH2R

10

CH3F

CH3R

CH4F

CH4R

CH1F

CH1R

CH2F

CH2R

11

CH3F

CH3R

CH4F

CH4R

CH1

CH2

12

CH3

CH4

CH1

CH2

13

CH3

CH4

CH1

14

CH2

CH3

14

CH4

15

16

17

18

CH1

Ch2

CH2

CH3

19

20

CH4

CH3

CH4

(To be continued)

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.3

2006.02.27

Http: www.silan.com.cn

Page 16 of 24

SA5901

(Continued)

Measuring no.

CH1

SW no

1

••

A

2

••

B

••

B

••

3

••

B

••

B

••

4

••

B

••

B

••

5

B

••

B

••

B

••

B

6

B

••

B

7

B

••

B

8

B

A

B

9

10

••

A

••

B

••

B

A

••

CH2

21

CH3

CH4

CH1

CH2

22

CH3

CH4

23

24

25

26

27

CH1

••: Switch open

VO

VO1

VO2

Output

offset

xc' xc

voltage

VIN4 VIN3

VIN

VIN2 VIN1

Dead zone

VO3

VO4

Voltage gain

V01- V02

GVC (+)=20log |

|

VIN1- VIN2

V03 - V04

GVC (•)=20log |

VIN3 - VIN4

Gain error by polarity

GVC(+)•GVC(•)

Dead zone

VIN2× V01- VIN1× V02 VIN3× V04 - VIN4× V03

xc•xc’=

-

V01- V02

V03 - V04

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.3

2006.02.27

Http: www.silan.com.cn

Page 17 of 24

SA5901

Supplementary explanation of test circuit 2

No.6 Input conditions

CH1, 3&4 (VIN1=VREF+0.15V)

(VIN2=VREF+0.15V)

(VIN3=VREF•0.15V)

CH2 only (VIN1=VREF+0.10V)

(VIN2=VREF+0.05V)

(VIN3=VREF•0.10V)

(VIN4=VREF•0.05V)

(VIN4=VREF•0.15V)

No. 7 GVC(+)•GVC(•)

No. 8 Current flowing when 1.7V has been impressed each driver shall be IRIN1, and current flowing when

1.8V has been impressed shall be IRIN2.

No.9 Measure voltage between output F and output R of each driver upon RL=8W. (HVCC=BATT=4V)

No. 10 Voltage between each output F and GND when 300mA has been flowed into a lower power transistor.

(HVCC=BATT=2V)

No. 11 Voltage between each output and HVCC when 300mA has been taken from an upper power transistor.

(HVCC=BATT=2V)

No. 12 Measure voltage between each driver input pin and VREF pin.

No. 13 Measure voltage between output F and output R of driver upon short•circuiting between each driver

input pin and VREF pin. (RL=8W).

No. 14 Measure at input conditions of (VIN1=VREF+50mV)

(VIN2=VREF+30mV)

(VIN3=VREF•50mV)

(VIN4=VREF•30mV)

No. 15 Output of CH1 shall be 0 when 2.0V has been impressed to BRAKE1 pin.

No. 16 Output of CH1 shall be observed completely when 0.8V has been impressed to BRAKE1 pin.

No. 17 Output of CH2 shall be 0 when 2.0V has been impressed to MUTE2 pin.

No. 18 Output of CH2 shall be observed completely when 0.8V has been impressed to MUTE2

No. 19 Output of CH3 &CH4 shall be 0 when 0.8V has been impressed to MUTE34 pin.

No. 20. Output of CH3 &CH4 shall be observed completely when 2.0V has been impressed to MUTE34 pin.

No. 21 Each output of driver shall be observed completely when 1.2V has been impressed to VREF pin.

No. 22 Each output of driver shall be 0 when 0.8V has been impressed to VREF pin.

No. 23 Measure the difference between IBAT upon BRAKE=0V and IBAT upon BRAKE1=3.2V.

No. 24 Measure current flowing into PSW pin.

No. 25 Difference between OUT1F pin voltage and HVCC pin voltage generated by a switching regulator.

No. 26 Measure leak current of HVCC pin.

No. 27 When approximately 1V is observed in driver output (OUT1F pin) (VIN1=VREF+0.2V), PWMFIL pin

current upon HVCC=1.2V shall be IPWM1 and the current upon HVCC=1.4V shall be IPWM2. (Measure PWMFIL

pin at 0.7V.)

IPWM1- IPWM2

GPWM =

(1/KW)

0.2V

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.3

2006.02.27

Http: www.silan.com.cn

Page 18 of 24

SA5901

TEST CIRCUIT (3)

Table of test circuit 3 switches position

Measuring

SW No

No.

41

42

43

55

56

44

45

46

1

••

2

A

3

••

A

••

4

A

5

••

6

••

7

A

B

A

8

B

A

B

A

9

••

10

••

(To be continued)

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.3

2006.02.27

Http: www.silan.com.cn

Page 19 of 24

SA5901

(Continued)

Measuring

SW No

No.

1

••

B

A

B

2

A

••

3

••

4

A

••

5

••

B

A

6

••

C

B

A

••

C

••

7

B

••

8

A

••

B

••

9

••

A

B

A

B

••

A

••

A

B

••

10

••

A

••

47

61

62

63

64

65

66

67

68

69

70

71

72

73

74

75

76

77

••: Switch open

Supplementary explanation of test circuit

No. 41 Measure SW pin oscillation frequency upon VSYS1=0V and VSTART=0V.

No. 42 Measure SW pin oscillation frequency upon VSYS1=3.2V.

No. 43 Measure SW pin oscillation frequency when pulse wave of 88.2kHz has been inputted to CLK pin.

No. 44 Measure minimum pulse width outputted to SW pin upon increasing E0 pin voltage from 0.5V.

SW

DUTY=(t1/t)x100%

t1

TIME

t

No. 45 Measure SW pin pulse duty upon VSYS1=0V and VSTART=0V.

No. 46 Measure SW pin pulse duty upon VSYS1=3.2V and CLK=0V.

No. 47 Measure SW pin pulse duty upon VSYS1=3.2V and CLK=88.2kHz.

No. 55 &56 Check the synchronization of SW pin when low level of pulse wave inputted to CLK pin has been

0.8V and high level has been 2.0V.

No. 61 &63 BSEN pin voltage when EMP pin varies from “H” to “L” upon decreasing the BSEN pin voltage

(VSEL=0V).

The voltage width until EMP pin varies “L” to “H” upon increasing BSEN pin voltage from that voltage shall be

hysteresis width.

No. 62 &64 BSEN pin voltage when EMP pin varies from “H” to “L” upon decreasing the BSEN pin voltage

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Page 20 of 24

SA5901

(ISEL=•2mA).

The voltage width until EMP pin varies “L” to “H” upon increasing BSEN pin voltage from that voltage shall be

hysteresis width.

No. 65 EMP pin voltage when 1mA has flowed into the EMP pin.

No. 66 Measure leak current of EMP pin.

No. 67 Current flowing into the BSEN pin when 2.4V has been impressed to this pin shall be IBSEN.

2.4V

RBSEN =

(ȍ)

IBSEN

No. 68 Measure leak current of BSEN pin. (VSYS1=0V)

No. 69 When 1.5V has been impressed between SEL pin and BATT pin, SEL pin shall judge it as “L”.

No. 70 When 2mA has been taken from SEL pin, SEL pin shall judge it as “Hi•z”.

No. 71 Ratio of VSYS1 voltage and error amplifier threshold voltage when RESET pin varies from “L” to “H”

upon increasing VSYS1 voltage.

No. 72 Measure VSYS1 voltage when RESET pin varies from “L” to “H” upon increasing VSYS1 voltage,

voltage width from VSYS1 until RESET pin varies from “H” to “L” upon decreasing VSYS1 voltage.

1.0V

RRST =

(ȍ)

IRESET

No. 75 AMUTE pin voltage when 1mA has been taken from the AMUTE pin.

No. 76 AMUTE pin voltage when 1mA has been taken from the AMUTE pin upon VSYS1=0V and VSTART=0V.

No. 77 Current flowing into AMUTE pin when 1.0V has been impressed to AMUTE pin shall be IAMUTE.

1.0V

RAMUTE =

(ȍ)

IAMUTE

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.3

2006.02.27

Http: www.silan.com.cn

Page 21 of 24

SA5901

TYPICAL APPLICATION CIRCUIT

TRAVERSE

SP INDLE

M

FOCUS

TRACKING

1.8K

M

33

32

31

30

29

28

27

26

25

24

23

AMUTE

EMP

IN1

34

22

21

20

19

18

17

16

15

14

13

12

MUTE2

IN2

35

36

33

HVCC

47

0.1

MUTE34

IN4

37

47 PSW

CLK

38

39

40

41

42

43

44

START

IN3

0.1

SA5901

OFF

VREF

100K

CHCVCC

SEL

VSYS2

OP+

PREGND

PWMFIL

OPOUT

VSYS1

1

2

3

4

5

6

7

8

9

10

11

filter

8.2K

470P

0.1

0.022

VOUT

DC/DC

converter

aplication

VIN

47

100

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.3

2006.02.27

Http: www.silan.com.cn

Page 22 of 24

SA5901

PACKAGE OUTLINE

QFP•44•10x10•0.8

UNIT: mm

LQFP•44•10x10•0.8

UNIT: mm

12.0±0.1

10.00±0.05

1.40±0.05

0.58±0.05

0.127

0.30

0.8

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.3

2006.02.27

Http: www.silan.com.cn

Page 23 of 24

SA5901

ATTACHMENT

Revision History

Data

REV

1.0

Description

Page

2003.04.08

2004.03.09

2004.04.08

Original

1.1

Add “QFP•44•10X10•0.8”

1.2

Modify the “TEST CIRCUIT(2)”

19

Modify the package of “QFP•44•10X10•0.8”

Add the package of “LQFP•44•10X10•0.8”

2006.02.27

1.3

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.3

2006.02.27

Http: www.silan.com.cn

Page 24 of 24


型号：	SA5901
厂家：	SILAN MICROELECTRONICS JOINT-STOCK
描述：	4-CHANNEL MOTOR DRIVER FOR PORTABLE CD PLAYER 4通道马达驱动器便携式CD播放器驱动器 CD 便携式
文件：	总24页 (文件大小：387K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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