SD6860 [SILAN]
CURRENT MODE PWMPFM CONTROLLER WITH BUILTIN MOSFET;
| 型号： | SD6860 |
| 厂家： | 
SILAN MICROELECTRONICS JOINT-STOCK |
| 描述： | CURRENT MODE PWMPFM CONTROLLER WITH BUILTIN MOSFET |
| 文件： | 总10页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD686X
CURRENT MODE PWM+PFM CONTROLLER WITH BUILT•IN HIGH VOLTAGE
MOSFET
DESCRIPTION
SD686X is current mode PWM+PFM controller with built•in high•
voltage MOSFET used for SWPS,with low standby power and low
start current for power switch. In standby mode, therccuiit enters
burst mode to reduce the standby power dissipatioTn.he switch
frequency is 25~67KHz with jitter frequency for low EMI.
Built•in peak current compensation circuimt akes the limit outpu
power stable even with different input AC voltage. Loimutitput
power can be adjusted through the resistor. Maximum peak current
DIP•8•300•2.54
compensation during power•on reduces pressure on transformer to
avoid saturation, the peak current compensation will decrease
balance after power•on.
It integrates various protections such as undervoltage lockout,
overvoltage protection, overload protection, lead edge blanking,
primary winding overcurrent protection and thermal shutdown. The
APPLICATIONS
circuit will restart until normal if protection occurs.
* SWPS
FEATURES
* Energy Star 2.0 standard
* Lower start•up current (3mA)
* Various switching frequency following load for the higher
efficiency
* Frequency jitter for low EMI
* Overvoltage, overcurrent, overload and over temperature
protections.
* Adjustable limit output power
* Undervoltage lockout
* Built•in high voltage MOSFET
* Auto restart mode
* Peak current compensation
* Maximum peak current compensation for initialization
* Burst mode
* Cycle by cycle current limit
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2010.03.12
Page 1 of 10
SD686X
ORDERING INFORMATION
Part No.
SD6860
SD6861
SD6862
SD6863
SD6864
Package
Marking
SD6860
SD6861
SD6862
SD6863
SD6864
Material
Pb free
Pb free
Pb free
Pb free
Pb free
Package Type
Tube
Tube
DIP•8•300•2.54
Tube
Tube
Tube
TYPICAL OUPUT POWER CAPABILITY
190~265V
85~265V
Part No.
Adapter
7W
Open
Adapter
Open
7.2W
12W
14W
15W
18W
SD6860P65K67
SD6861P65K67
SD6862P65K67
SD6863P65K67
SD6864P65K67
9W
5W
8W
10W
14W
17W
19W
21W
12W
10W
12W
14W
14W
16W
BLOCK DIAGRAM
FB
Reduced
frequency
control
OSC
VCC
DR
Frequency
jitter
S
Q
Internal
Bias
R
14.8V
7.6V
Control
Driver
Leading
Edge
Level shift
COMP
Blanking
Over voltage, over
current, over load and
over temperature
protections
Burst mode
control
Peak current
compensation
Limit output
power adjust
FB
ADJ
GND
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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REV:1.0
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Page 2 of 10
SD686X
ABSOLUTE MAXIMUM RATING
Characteristics
Symbol
Rating
650
±30
4
Unit
V
Drain•Gate Voltage (R =1MW)
V
V
GS
DGR
Gate•Source (GND) Voltage
SD6860
V
GS
SD6861
6
Drain Current Pulse
note1
I
A
A
DM
SD6862
8
SD6863
SD6864
SD6860
11
14
1
SD6861
SD6862
SD6863
SD6864
SD6860
SD6861
SD6862
SD6863
SD6864
1.5
Continuous Drain
Current
I
D
2
(Tamb=25°C)
3
4
15
30
Signal Pulse
Avalanche
Energynote2
EAS
mJ
68
140
200
28
Power Supply Voltage
Feedback input voltage
V
,MAX
CC
V
V
V
•0.3~8
•0.3~8
1.5
FB
Limit output power voltage
V
V
ADJ
P
W
D
Total Power Dissipation
D
0.017
+170
•25~+85
•55~+150
W/°C
°C
°C
°C
arting
Operating Junction Temperature
Operating Temperature
T
J
T
amb
Storage Temperature
T
STG
Note: 1. Pulse width is limited by maximum junction temperature;
2. L=51mH, TJ=25°C(start)。
ELECTRICAL CHARACTERISTICS (for MOSFET, unless otherwise specified, Tamb=25°C)
Characteristics
Symbol
BV
Test conditions
=0V, I =50mA
Min.
650
••
Typ.
••
Max. Unit
Drain•Source Breakdown Voltage
V
V
V
••
V
DSS
GS
DS
DS
D
=650V, V =0V
••
50
mA
GS
Zero Gate Voltage Drain Current
I
DSS
=480V, V =0V
GS
••
••
200
mA
Tamb=125°C
SD6860
••
••
••
••
••
14.0
8.0
5.0
4.0
3.0
16.8
SD6861
Static Drain•Source
SD6862
9.6
6.0
4.8
3.6
R
V =10V, I =0.5A
GS D
DS(ON)
W
On Resistance
SD6863
SD6864
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2010.03.12
Page 3 of 10
SD686X
Characteristics
SD6860
Symbol
Test conditions
Min.
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
Typ.
210
250
550
640
840
18
25
38
40
44
8
Max. Unit
••
••
SD6861
SD6862
SD6863
SD6864
SD6860
SD6861
SD6862
SD6863
SD6864
SD6860
SD6861
SD6862
SD6863
SD6864
SD6860
SD6861
SD6862
SD6863
SD6864
SD6860
SD6861
SD6862
SD6863
SD6864
SD6860
SD6861
SD6862
SD6863
SD6864
SD6860
SD6861
SD6862
SD6863
SD6864
Input Capacitance
C
ISS
V
V
=0V, V =25V, f=1MHz
pF
pF
pF
ns
ns
ns
ns
GS
DS
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
••
Output Capacitance
COSS
CRSS
TD(ON)
TR
=0V, V =25V, f=1MHz
DS
GS
10
17
30
40
10
12
20
33
40
3
Reverse Transfer
Capacitance
VGS=0V, VDS=25V, f=1MHz
VDD=0.5BVDSS, ID=25mA
VDD=0.5BVDSS, ID=25mA
Turn On Delay Time
4
Rise Time
15
19
25
27
30
55
70
90
8
Turn Off Delay Time
TD(OFF) VDD=0.5BVDSS, ID=25mA
10
25
32
42
Fall Time
TF
VDD=0.5BVDSS, ID=25mA
ELECTRICAL CHARACTERISTICS (unless otherwise specified, VCC=12V, Tamb=25°C)
Characteristics
Undervoltage Section
Start Threshold Voltage
Stop Threshold Voltage
Symbol
Test conditions
Min.
Typ.
Max.
Unit
VSTART
VSTOP
14
14.8
7.6
16
V
V
6.6
8.6
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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Page 4 of 10
SD686X
Characteristics
Oscillator Section
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Max. Oscillate Frequency
Min. Oscillate Frequency
fOSCMAX VFB=3V
61
20
67
25
73
30
KHz
KHz
VBURL<VFB<VBURH
fOSCMIN
Oscillate
frequency
is
Frequency jitter
fMOD
••
±2.5
±3.5
KHz
maximum
Frequency Change With
Temperature
••
25°C≤Tamb≤+85°C
••
±5
77
±10
82
%
%
Maximum Duty cycle
Feedback Section
Feedback Source Current
DMAX
72
IFB
VFB=0V, RADJ=0
0.8
3.8
0.9
4.3
1.0
4.8
mA
V
Shutdown
Feedback
Voltage
VSD
(over load protection)
Shutdown Feedback Delay Time
FB is increased to 5V from 0V
TSD
15
3
40
8
ms
instantly
VFB=5V
Shutdown Delay Current
Limit Output power
FB current 1
IDELAY
5.5
mA
IFB1
VFB=0V, RADJ=100KΩ
VFB=0V, FB current is
decreased
0.60
14
0.69
20
0.78
28
mA
Min. Resistor For Limit Output
Power Adjust
RADJ
KΩ
Current Limit
SD6860
0.53
0.67
0.80
1.10
1.35
0.60
0.75
0.90
1.20
1.50
0.67
0.83
1.00
1.30
1.65
SD6861
Peak Current Limit
IOVER
Max. inductor current
A
SD6862
SD6863
SD6864
Burst mode
Burst Mode High Voltage
Burst Mode Low Voltage
Protection Section
Overvoltage Protection
Over temperature protection
Quit over temperature protection
Leading•edge Blanking Time
Total Standby Current
Start Current
VBURH
VBURL
FB voltage
FB voltage
0.40
0.25
0.50
0.35
0.60
0.45
V
V
VOVP
TOTP
TOTU
TLEB
VCC voltage
22
125
80
24
26
••
V
160
100
650
°C
°C
ns
120
••
350
ISTART VCC increases from 0V to 12V
ISTATIC VFB=0V
••
3
10
3.0
3.0
3.0
3.2
3.2
3.4
mA
mA
mA
mA
mA
mA
mA
Quiescent Current
1.0
1.0
1.0
1.2
1.2
1.4
1.9
2.0
2.0
2.2
2.2
2.4
SD6860
SD6861
Operating Current
IOP
VFB=3V
SD6862
SD6863
SD6864
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2010.03.12
Page 5 of 10
SD686X
PIN CONFIGURATION
PIN DESCRIPTION
Pin No.
Pin Name
I/O
Function description
1
GND
ADJ
VCC
FB
I
I
Ground
2
ADJ pin
3
I
Power supply pin
Feedback input pin
NC
4
5
I/O
•
NC
6, 7, 8
DR
O
Drain pins.
FUNCTION DESCRIPTION
SD686X is designed for off•line SMPS, consisting of high voltage MOSFET, optimized gate driver and current
mode PWM+PFM controller which includes frequency oscillator and various protections such as undervoltage
lockout, overvoltage protection and overload protection. Frequency jitter generated from oscillator is used to
lower EMI. Burst mode is adopted during light load to lower standby power dissipation, and function of lead edge
blanking eliminates the MOSFET error shutdown caused by interference through minimizing MOSFET turning on
time. Peak current compensation reduces the pressure on transformer during circuit starts and output power limit
can be adjusted by resistor through ADJ pin. Few peripheral components are needed for higher efficiency and
higher reliability and it is suitable for flyback converter and forward converter.
1. Under Voltage Lockout and Self•Start
At the beginning, the capacitor connected to pinCVC is charged via start resistor by high voltage AC and the
circuit starts to work if voltage at VCC is 14.8V. The output and FB source current are shutdown if there is any
protection during normal operation and VCC is decreased because of powering of auxiliary winding. The whole
control circuit is shutdown if voltage atCCV is 7.6V below to lower current dissipation and the capacitor is
recharged for restarting.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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REV:1.0
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SD686X
2. Frequency Jitter and reduced frequency mode
The oscillation frequency is kept changed for low EMI and decreasing radiation on one frequency. The oscillation
frequency changes within a very small range to simplify EMI design. The rule of frequency changing (frequency
center is 67KHz): ±2.5KHz change in 4ms, 64 frequency points in all.
For high efficiency, frequency is changed according to current output from FB pin. When FB current is above a
certain value (different with different version) without limit output power adjust, frequency decrease from 67KHz
to typ. 25KHz.
3. Peak current compensation and normalization
Generally, limit output power changes with different inputs. Limit output power is hold in this circuit because of
peak current compensation. Larger peak current compensation for higher input AC voltage, it decreases to zero
with light load and no peak current compensation in burse mode.
Maximum peak current compensation during power•on reduces pressure on transformer to avoid saturation, the
peak current compensation will decrease for balance after power•on. The duration is decided by the load.
4. Limit output power adjust
Limit output power is adjusted by varying FB current through resistor RADJ adjust. When RADJ=0, no change in
limit output power; when RADJ exceeds typ. 20KΩ, limit output power begins to be reduced.
5. Burst mode
Working in this mode to reduce power dissipation. It works normally when FB is 0.5V above, and during
0.35V<FB <0.5V, there are two different conditions: when FB changes from low to high, there is no action for
switch and it is the same with condition of FB lower than 0.35V; the other is that FB changes form high to low,
comparison value is increased for increasing turning on time to decrease switch loss. In this mode, switching
frequency is down to 25KHz.
For this mode, during FB changes form high to low, the output voltage increases (increasing speed is decided by
load) because of the high comparison value to decrease FB until it is 0.35V below; when FB <0.35V, there is no
action for switch and output voltage decrease (decreasing speed is also decided by load) to increase FB voltage.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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SD686X
FB voltage is 0.5V below with light load. This is repeated to decrease action of switch for lower power dissipation.
6. Leading Edge Blanking
For this current•controlled circuit, there is pulse peak current during the transient of switch turning on and there is
an error operation if the current is sampled during this time. And leading edge blanking is adopted to eliminate
this error operation. The output of PWM comparator is used for controlling shutdown after the leading edge
blanking if there is any output drive.
7. Over Voltage Protection
The output is shutdown if voltage at Vcc exceeds the threshold value and this state is kept until the circuit is
powered on reset.
8. Overload Protection
FB voltage increases if there is overload and the output is shutdown when FB voltage is up to the feedback
shutdown voltage. This state is kept until the circuit is powered on reset.
9. Cycle By Cycle Peak Current Limit
During each cycle, the peak current value is decided by the comparison value of the comparator, which will not
exceed the peak current limited value to guarantee the current on MOSFET will not be larger than the rating
current. The output power will not increase if the current reaches the peak value to limit the max. output power.
The output voltage decreases and FB voltage increases if there is overload and corresponding protection occurs.
10. Primary winding over current protection
If secondary diode is short, or the transformer is short, this protection will occur. At this time, once it is over
current in spite of the leading edge blanking (L.E.B) time, protection will begin after 350ns, and is active for every
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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SD686X
cycle. When the voltage on the current sense resistor is 1.7V, this protection will occur and the output is shut
down. This state is kept until the under voltage occurs, and the circuit will start.
11. Thermal Shutdown
If the circuit is over temperature, the over temperature protection will shut down the output to prevent the circuit
from damage. This state is kept until it quit the temperature protection, and the circuit will start.
TYPICAL APPLICATION CIRCUIT
Note:
The circuit and parameters are for reference only, please set the parametertsheofreal application circui
based on the real test.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2010.03.12
Page 9 of 10
SD686X
PACKAGE OUTLINE
DIP•8•300•2.54
UNIT: mm
MOS DEVICES OPERATE NOTES:
Electrostatic charges may exist in many things. Please take following preventive measures to prevent effectively
the MOS electric circuit as a result of the damage which is caused by discharge:
l
l
l
l
The operator must put on wrist strap which should be earthed to against electrostatic.
Equipment cases should be earthed.
All tools used during assembly, including soldering tools and solder baths, must be earthed.
MOS devices should be packed in antistatic/conductive containers for transportation.
Disclaimer :
·
Silan reserves the right to make changes to the information herein for the improvement of the design and performance
without further notice! Customers should obtain the latest relevant information before placing orders and should verify
that such information is complete and current.
·
·
All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products
in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety
standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products
could cause loss of body injury or damage to property.
Silan will supply the best possible product for customers!
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2010.03.12
Page 10 of 10
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