SI1120-A-GM [SILICON]

PROXIMITY/AMBIENT LIGHT SENSOR WITH PWM OUTPUT; 带有PWM输出接近检测/环境光传感器
SI1120-A-GM
型号: SI1120-A-GM
厂家: SILICON    SILICON
描述:

PROXIMITY/AMBIENT LIGHT SENSOR WITH PWM OUTPUT
带有PWM输出接近检测/环境光传感器

传感器 输出元件
文件: 总20页 (文件大小:187K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Si1120  
PROXIMITY/AMBIENT LIGHT SENSOR WITH PWM OUTPUT  
Features  
Pin Assignments  
Typically 50 cm meter proximity High EMI immunity without  
range with single pulse  
shielded packaging  
Si1120  
ODFN  
Seven precision optical  
Power supply: 2.2–3.7 V  
measurement modes:  
Operating temperature range:  
3 proximity ranges  
3 dc ambient ranges  
1 calibration mode  
–40 to +85 °C  
1
2
3
4
8
7
6
5
PRX  
VSS  
MD  
Typical 10 µA current  
TXGD  
consumption  
TXO  
STX  
SC  
Low-noise ambient cancelling  
circuit allows maximum  
sensitivity with 8–12 bit resolution  
Programmable 400/50 mA LED  
VDD  
constant current driver output  
Allows independent LED supply  
ALS works in direct sunlight  
voltage  
(100 klux)  
U.S. Patent #5,864,591  
U.S. Patent #6,198,118  
Other patents pending  
Small outline 3 x 3 mm (ODFN)  
Minimum reflectance sensitivity  
2
<1 µW/cm  
Applications  
Handsets  
Notebooks/PCs  
Touchless switches  
Occupancy sensors  
Consumer electronics  
Industrial automation  
Display backlighting control  
Photo-interrupter  
Description  
The Si1120 is a low-power, reflectance-based proximity and ambient light  
sensor with advanced analog signal processing and analog PWM output.  
It includes an integrated differential photodiode, signal processor, and  
LED driver. Proximity sensing is based on the measurement of reflected  
light from an external, optically-isolated, strobed LED. A separate visible  
light photodiode is used for ambient light sensing. The standard package  
for the Si1120 is an 8-pin ODFN.  
Rev. 1.0 8/10  
Copyright © 2010 by Silicon Laboratories  
Si1120  
Si1120  
Functional Block Diagram  
Ambient Light  
Sources  
Transparent  
window  
Transparent  
window  
MUX  
AMP  
CMP  
PWM  
Output  
PRX  
VDD  
Infrared  
BUF  
emitter  
IR  
VIS  
Product  
Case  
RAMP  
GEN  
VREG  
STX  
SC  
TXO  
Optical Block  
MODE  
CTRL  
TX  
MD  
VSS  
TXGD  
3.3 V  
P0.0/VREF  
VDD / DC+  
GND / DC-  
C1  
1.0 uF  
Si1120  
P0.1 / AGND  
P0.2 / XTAL1  
P0.3 / XTAL2  
P0.4 / TX  
VSS  
MD  
PRX  
TXGD  
P0.5 / RX  
P0.6 / CNVSTR  
P0.7 / IREF0  
SC  
TXO  
STX  
VDD  
P1.0  
C8051F931  
P1.1  
P1.2  
P1.3  
P1.4  
P1.5  
P1.6  
DCEN  
VBAT  
R1  
30 ohm  
TX LED  
C2  
10 uF  
C3  
0.1 uF  
XTAL3  
XTAL4  
C4  
68.0 uF  
GND  
RST / C2CK  
P2.7 / C2D  
Figure 1. Si1120 Typical Application Example of Digital Proximity and Ambient Light Sensor with  
C8051F931 MCU and I2C Interface  
2
Rev. 1.0  
Si1120  
TABLE OF CONTENTS  
Section  
Page  
1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4  
2. Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6  
2.1. Theory of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6  
2.2. Mode Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7  
2.3. Proximity Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8  
2.4. Ambient-Light Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11  
2.5. Choice of LED and LED Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14  
2.6. Power-Supply Transients . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14  
2.7. Practical Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
3. Pin Descriptions—Si1120 (ODFN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16  
4. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17  
5. Photodiode Centers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17  
6. Package Outline (8-Pin ODFN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18  
Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19  
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20  
Rev. 1.0  
3
Si1120  
1. Electrical Specifications  
Table 1. Absolute Maximum Ratings*  
Parameter  
Conditions  
Min  
–0.3  
–40  
–65  
–0.3  
Typ  
Max  
5.5  
85  
Units  
V
Supply Voltage  
Operating Temperature  
Storage Temperature  
°C  
°C  
V
85  
Voltage on TXO with respect to  
GND  
5.5  
Voltage on all other Pins with  
respect to GND  
–0.3  
VDD + 0.3  
V
Maximum Total Current through  
TXO (TXO active)  
500  
600  
100  
2
mA  
mA  
mA  
kV  
Maximum Total Current through  
TXGD and VSS  
Maximum Total Current through  
all other Pins  
ESD Rating  
Human body model  
*Note: Stresses above those listed in this table may cause permanent damage to the device. This is a stress rating only, and  
functional operation of the devices at those or any other conditions above those indicated in the operational listings of  
this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device  
reliability.  
Table 2. Recommended Operating Conditions  
Parameter  
Symbol  
Conditions / Notes  
Min  
Typ Max  
Units  
Typical Operating Conditions (T = 25 °C)  
A
Supply Voltage  
V
T = –40 to +85 °C,  
2.2  
3.3  
3.7  
V
DD  
V
to GND, TXGD  
DD  
Operating Temperature  
–40  
25  
85  
°C  
V
SC/MD/STX High Threshold  
SC/MD/STX Low Threshold  
VIH  
VIL  
V
–0.7  
DD  
0.6  
1.0  
100  
250  
950  
V
1
Active TXO Voltage  
V
ALS Operating Range  
Edc  
kLx  
Hz  
nm  
2
Proximity Conversion Frequency  
125  
850  
3
LED Emission Wavelength  
600  
Notes:  
1. Minimum R1 resistance should be calculated based on LED forward voltage, maximum LED current, LED voltage rail  
used, and maximum active TXO voltage.  
2. When in Mode 0 and operating at 250 Hz, STX pulse width should be limited to 1 ms.  
3. When using LEDs near the min and max wavelength limits, higher radiant intensities may be needed to achieve the end  
system's proximity sensing performance goals.  
4
Rev. 1.0  
Si1120  
Table 3. Electrical Characteristics  
Parameter  
Symbol  
Conditions / Notes  
Min  
Typ Max  
Units  
IDD Shutdown  
SC >VIH, VDD = 2.7 to 3.7,  
T = 27 °C  
0.1  
1.0  
µA  
IDD Current Idle  
SC = STX <VIL  
90  
14  
150  
µA  
IDD Current During Transmit,  
Not Saturated  
V
= 3.3 V, LED I = 400 mA  
mA  
DD  
IDD Current During Transmit,  
Not Saturated  
V
= 3.3 V, LED I = 50 mA  
3
mA  
DD  
PRX Pulse Width Range  
PRX Logic High Level  
Tprx  
VOH  
VOL  
Emin  
V
= 3.3 V  
0.5  
2500  
us  
V
DD  
I
= –4 mA  
= 4 mA  
V
–0.7  
DD  
OH  
PRX Logic Low Level  
I
0.6  
V
OL  
2
Min. Detectable Reflectance Input  
V
= 3.3 V (Mode 0,2)  
1
µW/cm  
mW/cm  
mW/cm  
us  
DD  
2
2
Max. Detectable Reflectance Input Emax1  
Max. Detectable Reflectance Input Emax2  
V
= 2.2 V (Mode 3)  
= 3.7 V (Mode 3)  
= 3.3 V, Mode 1  
12  
48  
7
DD  
DD  
V
Tpwcal  
Itxo_sd  
Itxo  
V
Calibration Mode PRX Pulse Width  
TXO Leakage Current  
DD  
V
= 3.3 V, No strobe  
0.01  
400  
1
µA  
DD  
TXO Current (TX High Power)  
V
= 3.3 V,  
mA  
DD  
TXO = 1 V (Mode 0)  
TXO Current (TX Low Power)  
Itxo  
V
= 3.3 V,  
50  
mA  
DD  
TXO = 1 V (Mode 2,3)  
Power Up Latency*  
V
= 3.3 V  
500  
100  
10  
535  
µs  
Lx  
DD  
Full-Scale Ambient Light  
Full-Scale Ambient Light  
Full-Scale Ambient Light  
FSals1  
FSals2  
FSals3  
V
V
V
= 3.3 V, Mode 5  
= 3.3 V, Mode 6  
= 3.3 V, Mode 7  
DD  
DD  
DD  
kLx  
kLx  
*Note: Refer to "2.2. Mode Selection" on page 7 for additional information.  
Rev. 1.0  
5
Si1120  
2. Application Information  
2.1. Theory of Operation  
The Si1120 is an active optical-reflectance proximity detector and ambient-light sensor with a pulse-width  
modulated output. Depending on the mode selected, the duration of the PRX active (low) state is proportional to  
the amount of reflected light, the amount of zero-reflectance offset, or the amount of ambient light. The detection  
rate can be set by adjusting the frequency of the STX signal.  
The dual-port, active reflection proximity detector has significant advantages over single-port, motion-based  
infrared systems, which are good only for triggered events. Motion detection only identifies proximate moving  
objects and is ambiguous about stationary objects. The Si1120 allows in- or out-of-proximity detection, reliably  
determining if an object has left the proximity field or is still in the field even when it is not moving.  
An example of a proximity detection application is controlling the display and speaker of a cellular telephone. In this  
type of application, the cell phone turns off the power-consuming display and disables the loudspeaker when the  
device is next to the ear, then reenables the display (and, optionally, the loudspeaker) when the phone moves more  
than a few inches away from the ear.  
For small objects, the drop in reflectance is as much as the fourth power of the distance; this means that there is  
less range ambiguity than with passive motion-based devices. For example, a sixteen-fold change in an object's  
reflectance means only a fifty-percent drop in detection range. The Si1120 periodically measures proximity at a rate  
that can be set by an external controller.  
The Si1120 modes are:  
PRX400  
PRX50  
PRX50H  
OFC  
Proximity, 400 mA LED current  
Proximity, 50 mA LED current  
Proximity, 50 mA LED current, high reflectance range  
Offset calibration (proximity mode, no LED current)  
Visible ambient (10 klux sunlight)  
VAMB  
VIRL  
Visible and infrared ambient light, low range (500 lux sunlight)  
Visible and infrared ambient light, high range (128 klux sunlight)  
VIRH  
6
Rev. 1.0  
Si1120  
2.2. Mode Selection  
The Si1120 features a shutdown mode, three proximity-detection modes, three ambient-light sensing modes, and  
an offset calibration for high-sensitivity mode. Mode selection is accomplished through the sequencing of the SC  
(shutdown/clock), MD (mode), and STX (strobe/transmit) pins.  
The part enters shutdown mode unconditionally when SC is high. Each of the MD and STX inputs should be set to  
a valid high or low state. In shutdown mode, the PRX output is tri-stated, and the power-supply and TXO output  
leakage currents are negligible.  
The active modes are set by clocking the state of MD and STX on the falling edge of SC and then setting MD to the  
required state. Since setting SC high forces shutdown, SC must be held low for the selected mode to remain  
active. The timing diagram in Figure 2 illustrates the programming sequence. Table 4 indicates the various mode  
encodings. After the correct state has been programmed, the STX input is used to trigger measurements.  
Figure 2. Si1120 Mode Programming Timing Diagram  
Table 4. Mode Control Table  
Mode  
PRX400  
OFC  
Description  
STX (Latch) MD (Latch) MD (Static)  
Proximity, 400 mA LED current (Mode 0)  
Offset calibration for high sensitivity (Mode 1)  
Proximity, 50 mA LED current (Mode 2)  
Proximity, 50 mA LED current, high reflectance (Mode 3)  
Visible and infrared ambient, low range (Mode 4)  
Visible ambient (Mode 5)  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
PRX50  
PRX50H  
VIRL  
VAMB  
VIRH  
Visible and infrared ambient, high range (Mode 6)  
(Reserved) Reserved mode  
If the mode must be changed, the SC pin may need to be rearmed (set high), in which case the shutdown mode is  
set and a power-on latency of about 500 µs is incurred upon enabling of the selected mode when SC goes back  
low. Following a mode change, STX must be kept low during the power-up latency period. If the host sets STX too  
early, the Si1120 may not begin a measurement cycle; PRX does not assert. If this occurs, the host can restart a  
measurement by toggling STX.  
Rev. 1.0  
7
Si1120  
2.3. Proximity Modes  
In proximity mode, an LED sends light pulses that are reflected from the target to a photodiode and processed by  
the Si1120’s analog circuitry. Light reflected from a proximate object is detected by the receiver, and the Si1120  
converts the light signal into a pulse at the PRX output of a duration proportional to the amount of reflected light.  
The LED is turned off at the trailing (rising) edge of the PRX pulse. The detection cycle may be aborted before the  
end of the PRX pulse by bringing STX low. This allows the system designer to limit the maximum LED “on” time in  
applications where high reflectivity periods are not of interest, thus saving power and minimizing the LED duty  
cycle. Aborting the detection cycle at a set time also enables fast threshold comparison by sampling the state of the  
PRX output at the trailing (falling) edge of the STX input. An active (low) PRX output when STX falls means that an  
object is within the detection range. Forcing a shorter detection cycle also allows a faster proximity measurement  
rate thus allowing more samples to be averaged for an overall increase in the signal-to-noise ratio.  
For long-range detection, PRX400 mode is selected. For short-range detection, PRX50 mode is selected. PRX50H  
mode is typically used in short-range, single-optical-port applications where the internal optical reflection level is  
high. The greater reflectance range combined with a lower LED power prevents internal reflections from saturating  
the receiver circuit.  
The offset calibration mode works the same way as the other proximity modes but without turning on the LED. This  
allows precise measurement of the environment and Si1120 internal offsets without any LED light being reflected.  
The offset calibration mode also allows compensation of drifts due to supply and temperature changes.  
Figure 3. Proximity Mode Timing Diagram  
Figure 4. Proximity Mode Timing Diagram (Aborted Cycle)  
8
Rev. 1.0  
Si1120  
40  
35  
30  
25  
20  
15  
10  
5
47%, Hand, 1 Lux  
47%, Hand, 300 Lux Fluorescent  
47%, Hand, 300 Lux Incandescent  
18% Gray Card, 1 Lux  
92% White Card, 1 Lux  
0
0
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
2000  
PRX Pulse Width (us)  
Figure 5. PRX400 Mode 0  
25  
47%, Hand, 1 Lux  
20  
15  
10  
5
47%, Hand, 300 Lux Fluorescent  
47%, Hand, 300 Lux Incandescent  
18% Gray Card, 1 Lux  
92% White Card, 1 Lux  
0
0
50  
100  
150  
PRX Pulse Width (us)  
200  
250  
300  
Figure 6. PRX50 Mode 2  
Rev. 1.0  
9
Si1120  
40  
35  
30  
25  
20  
15  
10  
5
18% Gray Card, 400 mA  
18% Gray Card, 50 mA  
92% White, 400 mA  
92% White, 50 mA  
0
0
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
2000  
PRX Pulse Width (us)  
Figure 7. Combined PRX400 and PRX50  
10  
Rev. 1.0  
Si1120  
2.4. Ambient-Light Modes  
Proximity offset and gain can be affected a few percent by high ambient light levels (e.g. sunlight or strong  
incandescent lighting). While the cal mode can be used to determine offsets from large ambient light or ambient  
noise levels in PRX400 and PRX50 modes, direct measurement of the ambient levels can help identify whether  
changes in reflectance are valid or in fact due to large ambient light changes. Usually, this is only an issue in high  
reflectance situations, such as single window operation without good optical isolation, where large changing  
ambients are an issue.  
The Si1120 has two photodiodes, each of which peaks at a different wavelength. The VAMB mode uses the visible  
light photodiode which peaks at around 530 nm. On the other hand, the VIRH and VIRL modes use the photodiode  
which peaks at around 830 nm. Although the visible-light photodiode peaks near 550 nm (considered the peak  
wavelength of human perception), the Si1120 visible photodiode extends to infrared light as well. Similarly, the  
Si1120 infrared photodiode detects infrared light as well as part of the visible light spectrum. The Si1120 treats  
ultraviolet, visible, and infrared light as a continuous spectrum.  
The ratio between the visible and infrared photodiode readings provides a good clue to the type of light source. The  
reason is that each light source consists of a characteristic mix of infrared and visible light. For example, blackbody  
radiators, such as incandescent or halogen lamps, can have significant energy in the infrared spectrum. On the  
other hand, fluorescent lamps have more energy in the visible light spectrum. The term “color ratio” will be used to  
describe the relative strength of the visible photodiode reading relative to the infrared photodiode reading. Human  
color vision employs a similar principle.  
The VAMB/VIRH or VAMB/VIRL color ratios are representative of the Si1120's color perception. Choosing between  
these two color ratios depends on the light intensity. In general, VAMB/VIRL should be used first since VIRL has  
higher sensitivity. For higher light intensities, the VAMB/VIRH ratio should be used.  
Note that VAMB, VIRH, and VIRL pulse widths are used as dividends and divisors in these ratios. What this means  
is that the pulse width offsets (at 0 lux) need to be removed prior to usage in the above color ratios. For best  
precision, it is best to take VAMB, VIRH, and VIRL measurements at 0 lux and to use actual measured values.  
However, a good rule of thumb is to subtract 7.1 µs, 11.3 µs, and 9.9 µs respectively from VAMB, VIRH, and VIRL  
(then assigning 0 µs to any resulting negative value). This rule-of-thumb can be used when accuracy is less critical.  
Unless stated otherwise, the plots and figures used in this data sheet use offset-corrected values for VAMB, VIRH,  
and VIRL.  
Once a color ratio has been derived, the light type(s) and lux ratios are also identified. The lux ratio describes the  
ratio between the desired lux value and VAMB, VIRL, or VIRH (depending on the situation). The appropriate lux  
ratio, when multiplied with the applicable measurement, yields the final calculated lux value. Without any  
calibration, it should be possible to arrive within 50% (or 50 lux) of the absolute lux value.  
Figure 8. Ambient Light Mode Timing Diagram  
Rev. 1.0  
11  
Si1120  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
VAMB  
VIRL  
0
0
400  
800  
1200  
1600  
2000  
W6H7ꢀQˆy†rꢀXvq‡uꢀꢀꢁW6H7ꢀꢄꢀWDSCꢀ8‚y‚ꢅꢀSh‡v‚ꢀ—!#ꢇ  
400  
500  
600  
700  
800  
900  
1000  
Wavelength (nm)  
Figure 12. Incandescent/Halogen Transfer  
Function  
Figure 9. Si1120 Typical Spectral Response  
100  
80  
60  
40  
20  
0
2500  
2000  
1500  
1000  
500  
0
0
100  
200  
300  
400  
500  
600  
700  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
VIRH Pulse Width (VIRL, VAMB saturated)  
W6H7ꢀQˆy†rꢀXvq‡uꢀꢁW6H7ꢄWDSGꢀ8‚y‚ꢅꢀSh‡v‚ꢀ3ꢂꢆ!ꢇ  
Figure 10. Sunlight Transfer Function  
Figure 13. CFL Transfer Function  
140  
4
3.5  
3
120  
100  
80  
60  
40  
20  
0
2.5  
2
1.5  
1
0.5  
0
10  
15  
20  
25  
30  
35  
40  
0
200  
400  
600  
800  
1000  
1200  
1400  
W6H7ꢀꢄꢀWDSCꢀ8‚y‚ꢅꢀSh‡v‚  
WDSGꢀQˆy†rꢀXvq‡uꢀꢁWDSGꢀ1ꢀ &ꢂꢂꢃꢀW6H7ꢀꢄꢀWDSGꢀ8‚y‚ꢅꢀSh‡v‚ꢀ—ꢆꢂ'ꢇ  
Figure 14. Lux/VAMB vs. Color Ratio  
Figure 11. Low Light Transfer Function  
12  
Rev. 1.0  
Si1120  
0.2  
0.16  
0.12  
0.08  
0.04  
0
0.04  
0.05  
0.06  
0.07  
0.08  
0.09  
0.1  
W6H7ꢀꢄꢀWDSGꢀ8‚y‚ꢅꢀSh‡v‚  
Figure 15. Lux/VIRL Ratio vs. Color Ratio  
Rev. 1.0  
13  
Si1120  
2.5. Choice of LED and LED Current  
In order to maximize detection distance, the use of an infrared LED is recommended. However, red (visible) LEDs  
are viable in applications where a visible flashing LED may be useful and a shorter detection range is acceptable.  
Red LEDs do not permit the use of infrared filters and thus are more susceptible to ambient-light noise. This added  
susceptibility effectively reduces the detection range. White LEDs have slow response and do not match the  
Si1120’s spectral response well; they are, therefore, not recommended.  
The Si1120 maintains excellent sensitivity in high ambient and optically noisy environments, most notably from  
fluorescent lights. In very noisy environments, the maximum sensitivity may drop by a factor of up to one hundred,  
causing a significant reduction in proximity range. With reduced sensitivity, the effect of optical environmental noise  
is reduced. For this reason, it is best to drive the LED with the maximum amount of current available, and an  
efficient LED should be selected. With careful system design, the duty cycle can be made very low, thus enabling  
most LEDs to handle the peak current of 400 mA while keeping the LED’s average current draw on the order of a  
few microamperes. Total current consumption can be kept well below that of a typical lithium battery's self-  
discharge current of 10 µA, thus ensuring the battery's typical life of 10 years.  
Another consideration when choosing an LED is the LED's half-angle. An LED with a narrow half-angle focuses the  
available infrared light using a narrower beam. When the concentrated infrared light encounters an object, the  
reflection is much brighter. Detection of human-size objects one meter away can be achieved when choosing an  
LED with a narrower half-angle and coupling it with an infrared filter on the enclosure.  
2.6. Power-Supply Transients  
2.6.1. V Supply  
DD  
The Si1120 has good immunity from power-supply ripple, which should be kept below 50 mVpp for optimum  
performance. Power-supply transients (at the given amplitude, frequency, and phase) can cause either spurious  
detections or a reduction in sensitivity if they occur at any time within the 300 µs prior to the LED being turned on.  
Supply transients occurring after the LED has been turned off have no effect since the proximity state is latched  
until the next cycle. The Si1120 itself produces sharp current transients, and, for this reason, must also have a bulk  
capacitor on its supply pins. Current transients at the Si1120 supply can be up to 20 mA.  
2.6.2. LED Supply  
If the LED is powered directly from a battery or limited-current source, it is desirable to minimize the load peak  
current by adding a resistor in series with the LED’s supply capacitor. If a regulated supply is available, the Si1120  
should be connected to the regulator’s output and the LED to the unregulated voltage, provided it is less than 6 V.  
There is no power-sequencing requirement between VDD and the LED supply. The typical LED current peak of  
400 mA can induce supply transients well over 50 mVpp, but those transients are easy to decouple with a simple  
R-C filter because the duty-cycle-averaged LED current is quite low.  
2.6.3. LED Supply (Single Port Configuration)  
When using a single optical port, the Si1120 attempts to detect changes in reflection that can be less than one  
percent of the received signal. A constant LED current is essential to avoid spurious detections. It is, therefore,  
critical to prevent TXO saturation. If TXO is allowed to saturate in a single-port configuration, the Si1120 will be  
very sensitive to LED power-supply variations and even to frequency variations at the STX input. A reservoir  
capacitor should be chosen based on the expected TXO pulse width, and a series resistor should be selected  
based on the STX duty cycle.  
2.6.4. LED Supply (Dual Port Configuration)  
When using separate optical ports for the LED and for the Si1120, the signal reflected from the target is large  
compared with the internal reflection. This eliminates the need for keeping the LED current constant, and the TXO  
output can, therefore, be allowed to saturate without problem. In addition, only the first 10 µs of the LED turn-on  
time are critical to the detection range. This further reduces the need for large reservoir capacitors for the LED  
supply. In most applications, a 10 µF capacitor is adequate. A 100 to 1 kresistor should be added in series to  
minimize peak load current.  
14  
Rev. 1.0  
Si1120  
2.7. Practical Considerations  
It is important to have an optical barrier between the LED and the Si1120. The reflection from objects to be  
detected can be very weak since, for small objects within the LED's emission angle, the amplitude of the reflected  
signal decreases in proportion with the fourth power of the distance. The receiver can detect a signal with an  
2
irradiance of 1 µW/cm . An efficient LED typically can drive to a radiant intensity of 100 mW/sr. Hypothetically, if  
2
this LED were to couple its light directly into the receiver, the receiver would be unable to detect any 1 µW/cm  
2
2
signal since the 100 mW/cm leakage would saturate the receiver. Therefore, to detect the 1 µW/cm signal, the  
internal optical coupling (e.g. internal reflection) from the LED to the receiver must be minimized to the same order  
of magnitude (decrease by 10 ) as the signal the receiver is attempting to detect. As it is also possible for some  
5
LEDs to drive a radiant intensity of 400 mW/sr, it is good practice to optically decouple the LED from the source by  
6
a factor of 10 . A Dual-Port Optical Window shown in Figure 16 can accomplish this easily.  
If an existing enclosure is being reused and does not have dedicated openings for the LED and the Si1120, the  
proximity detector may still work if the optical loss factor through improvised windows (e.g. nearby microphone or  
fan holes) or semi-opaque material is not more than 90% in each direction. In addition, the internal reflection from  
an encased device's PMMA (acrylic glass) window (common in cellular telephones, PDAs, etc.) must be reduced  
through careful component placement. To reduce the optical coupling from the LED to the Si1120 receiver, the  
distance between the LED and the Si1120 should be maximized, and the distance between both components (LED  
and Si1120) to the PMMA window should be minimized. The PRX50H mode can be used for the Single-Port  
Optical Window shown in Figure 16.  
Another practical consideration is that system optical leakage, overlay thickness and transmittance, LED efficiency  
variation, TXO sink drive and photodiode part-to-part difference all collectively lead to reflectance measurement  
variation even under a given proximity condition. For applications requiring PRX pulse width consistency across  
multiple systems, factory calibration is recommended. Factory calibration involves taking a reference measurement  
against a consistent and reproducible reflective object (such as an 18% gray card) at a fixed distance during  
system production testing. Having this reference proximity measurement stored in non-volatile RAM or Flash  
allows host software to make necessary adjustments to incoming PRX pulse widths against this reference  
proximity measurement. A low background infrared environment is recommended.  
For best proximity range performance, the system optical leakage can be characterized during factory calibration.  
To do this, a reference proximity measurement is made when it is known that no object is in proximity of the system  
at the time of the measurement. The 'no object' reference measurement allows host software to establish the level  
of system optical leakage and make the necessary corrections to account for this.  
In a similar way, for applications with heavy reliance on ALS accuracy, measurements using reference light sources  
during factory calibration can be used to make adjustments to VAMB, VIRL, and VIRH measurements.  
Transparent  
window  
PRX50H Mode  
Si1120  
Si1120  
Internal Reflection Optical block  
Transmit LED  
Transmit LED  
Optical block  
Single-port Optical Window  
Dual-port Optical Window  
Figure 16. Dual-Port and Single-Port Optical Window  
Rev. 1.0  
15  
Si1120  
3. Pin Descriptions—Si1120 (ODFN)  
PRX  
TXGD  
TXO  
1
2
3
4
8
7
6
5
VSS  
MD  
SC  
STX  
VDD  
Figure 17. Pin Configurations  
Table 5. Pin Descriptions  
Description  
Pin  
Name  
1
PRX PWM Output.  
Outputs a low-going PWM pulse proportional to signal.  
TXGD TXGD.  
Power ground (LED and PRX driver ground return). Must be connected to VSS.  
TXO Transmit Output.  
2
3
Normally connected to an infrared LED cathode. The output current is a programmable con-  
stant current sink. This output can be allowed to saturate, and output current can be limited by  
the addition of a resistor in series with the LED.  
4
STX Strobe.  
Initiates PS or ALS measurement. Also used as data input for the M2 internal mode control  
flip-flop.  
5
6
V
Power Supply.  
2.2 to 3.7 V voltage source.  
DD  
SC  
Shutdown/Clock.  
When high, shuts down the part. When enabling the part, the low-going edge clocks the states  
of STX and MD into mode-control D flip-flops M2 and M3.  
7
8
MD  
Mode Control.  
Controls two mode control bits, one directly and the other indirectly, by providing the data input  
for the M3 internal mode control flip-flop.  
VSS VSS.  
Ground (analog ground). Must be connected to TXGD.  
16  
Rev. 1.0  
Si1120  
4. Ordering Guide  
Part Ordering #  
Temperature  
Package  
Si1120-A-GM  
–40 to +85 °C  
3x3 mm ODFN8  
5. Photodiode Centers  
Rev. 1.0  
17  
Si1120  
6. Package Outline (8-Pin ODFN)  
Figure 18 illustrates the package details for the Si1120 ODFN package. Table 6 lists the values for the dimensions  
shown in the illustration.  
Figure 18. ODFN Package Diagram Dimensions  
Table 6. Package Diagram Dimensions  
Dimension  
Min  
Nom  
Max  
A
0.55  
0.65  
0.75  
b
D
0.25  
1.40  
0.30  
3.00 BSC.  
1.50  
0.35  
1.60  
D2  
e
0.65 BSC.  
3.00 BSC.  
2.30  
E
E2  
2.20  
0.30  
2.40  
0.40  
L
0.35  
aaa  
bbb  
ccc  
ddd  
Notes:  
0.10  
0.10  
0.08  
0.10  
1. All dimensions shown are in millimeters (mm).  
2. Dimensioning and Tolerancing per ANSI Y14.5M-1994.  
18  
Rev. 1.0  
Si1120  
DOCUMENT CHANGE LIST  
Revision 0.41 to Revision 0.42  
Removed custom package option.  
Updated Table 1 on page 4.  
Added Operating, Storage temps, and ESD to Table 1.  
Updated "4. Ordering Guide" on page 17.  
Added ordering part number information.  
Added "6. Package Outline (8-Pin ODFN)" on page  
18.  
Updated " Functional Block Diagram" on page 2.  
Added Figures 5, 6, and 7.  
Updated "2.4. Ambient-Light Modes" on page 11.  
Added Figures 9, 10, 11,12, 13, 14, and 15.  
Updated "2.5. Choice of LED and LED Current" on  
page 14.  
Revision 0.42 to Revision 0.43  
Updated Table 3 on page 5.  
Updated power up latency maximum value from 300 to  
500 µs.  
Updated FSals2 typical value from 128 to 100.  
Updated "2.2. Mode Selection" on page 7.  
Revision 0.43 to Revision 1.0  
Updated Table 3 on page 5.  
Widened limits of PRX Pulse Width Range  
from 4 min / 2200 max to 0.5 min / 2500 max.  
PRX Logic High Level changed to VDD – 0.7 from  
VDD – 0.5.  
Removed IDD current specification for saturated driver  
condition.  
Removed Temperature Coefficient specification.  
Increased power-up latency from 500 to 535 µs.  
Changed IDD Current Idle from 120 µA TYP to 90 µA  
TYP and 300 µA Max to 150 µA Max.  
Updated first paragraph in "2.4. Ambient-Light  
Modes" on page 11.  
Renamed Section “2.7. Mechanical and Optical  
Implementation” to “2.7. Practical Considerations” .  
Added factory calibration guidance.  
Added "5. Photodiode Centers" on page 17.  
Rev. 1.0  
19  
Si1120  
CONTACT INFORMATION  
Silicon Laboratories Inc.  
400 West Cesar Chavez  
Austin, TX 78701  
Tel: 1+(512) 416-8500  
Fax: 1+(512) 416-9669  
Toll Free: 1+(877) 444-3032  
Please visit the Silicon Labs Technical Support web page:  
https://www.silabs.com/support/pages/contacttechnicalsupport.aspx  
and register to submit a technical support request.  
The information in this document is believed to be accurate in all respects at the time of publication but is subject to change without notice.  
Silicon Laboratories assumes no responsibility for errors and omissions, and disclaims responsibility for any consequences resulting from  
the use of information included herein. Additionally, Silicon Laboratories assumes no responsibility for the functioning of undescribed features  
or parameters. Silicon Laboratories reserves the right to make changes without further notice. Silicon Laboratories makes no warranty, rep-  
resentation or guarantee regarding the suitability of its products for any particular purpose, nor does Silicon Laboratories assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation conse-  
quential or incidental damages. Silicon Laboratories products are not designed, intended, or authorized for use in applications intended to  
support or sustain life, or for any other application in which the failure of the Silicon Laboratories product could create a situation where per-  
sonal injury or death may occur. Should Buyer purchase or use Silicon Laboratories products for any such unintended or unauthorized ap-  
plication, Buyer shall indemnify and hold Silicon Laboratories harmless against all claims and damages.  
Silicon Laboratories and Silicon Labs are trademarks of Silicon Laboratories Inc.  
Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders.  
20  
Rev. 1.0  

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