SI8631BD-B-ISR [SILICON]
Analog Circuit, 1 Func, CMOS, PDSO16, SOIC-16;
| 型号： | SI8631BD-B-ISR |
| 厂家： | 
SILICON |
| 描述： | Analog Circuit, 1 Func, CMOS, PDSO16, SOIC-16 光电二极管 |
| 文件： | 总38页 (文件大小：439K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si8630/31/35
LOW-POWER TRIPLE-CHANNEL DIGITAL ISOLATOR
Features
High-speed operation
DC to 150 Mbps
No start-up initialization required
Selectable fail-safe mode
Default high or low output
(ordering option)
Precise timing (typical)
Wide Operating Supply Voltage
2.5–5.5 V
Up to 5000 VRMS isolation
10 ns propagation delay
1.5 ns pulse width distortion
0.5 ns channel-channel skew
2 ns propagation delay skew
5 ns minimum pulse width
Transient Immunity 50 kV/µs
AEC-Q100 qualification
Wide temperature range
–40 to 125 °C
60-year life at rated working voltage
High electromagnetic immunity
Ultra low power (typical)
5 V Operation
1.6 mA per channel at 1 Mbps
5.5 mA per channel at 100 Mbps
2.5 V Operation
1.5 mA per channel at 1 Mbps
3.5 mA per channel at 100 Mbps
Tri-state outputs with ENABLE
Schmitt trigger inputs
RoHS-compliant packages
SOIC-16 wide body
SOIC-16 narrow body
Ordering Information:
Applications
See page 27.
Industrial automation systems
Medical electronics
Hybrid electric vehicles
Isolated ADC, DAC
Motor control
Power inverters
Isolated switch mode supplies
Communications systems
Safety Regulatory Approvals
UL 1577 recognized
Up to 5000 VRMS for 1 minute
VDE certification conformity
IEC 60747-5-2
(VDE0884 Part 2)
EN60950-1
CSA component notice 5A approval
IEC 60950-1, 61010-1, 60601-1
(reinforced insulation)
(reinforced insulation)
CQC certification approval
GB4943.1
Description
Silicon Lab's family of ultra-low-power digital isolators are CMOS devices
offering substantial data rate, propagation delay, power, size, reliability, and
external BOM advantages over legacy isolation technologies. The operating
parameters of these products remain stable across wide temperature ranges
and throughout device service life for ease of design and highly uniform
performance. All device versions have Schmitt trigger inputs for high noise
immunity and only require VDD bypass capacitors.
Data rates up to 150 Mbps are supported, and all devices achieve propagation
delays of less than 10 ns. Enable inputs provide a single point control for
enabling and disabling output drive. Ordering options include a choice of
isolation ratings (2.5, 3.75 and 5 kV) and a selectable fail-safe operating mode
to control the default output state during power loss. All products >1 kVRMS are
safety certified by UL, CSA, VDE, and CQC, and products in wide-body
packages support reinforced insulation withstanding up to 5 kVRMS
.
Rev. 1.4 9/13
Copyright © 2013 by Silicon Laboratories
Si8630/31/35
Si8630/31/35
2
Rev. 1.4
Si8630/31/35
TABLE OF CONTENTS
Section
Page
1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
2. Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
2.1. Theory of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
2.2. Eye Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
3. Device Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
3.1. Device Startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
3.2. Undervoltage Lockout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
3.3. Layout Recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
3.4. Fail-Safe Operating Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
3.5. Typical Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
4. Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
5. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
6. Package Outline: 16-Pin Wide Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
7. Land Pattern: 16-Pin Wide-Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
8. Package Outline: 16-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31
9. Land Pattern: 16-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33
10. Top Markings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
10.1. Si863x Top Marking (16-Pin Wide Body SOIC) . . . . . . . . . . . . . . . . . . . . . . . . . . .34
10.2. Top Marking Explanation (16-Pin Wide Body SOIC) . . . . . . . . . . . . . . . . . . . . . . .34
10.3. Si863x Top Marking (16-Pin Narrow Body SOIC) . . . . . . . . . . . . . . . . . . . . . . . . . .35
10.4. Top Marking Explanation (16-Pin Narrow Body SOIC) . . . . . . . . . . . . . . . . . . . . . .35
Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38
Rev. 1.4
3
Si8630/31/35
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Symbol
Min
Typ
Max
Unit
Parameter
Ambient Operating Temperature*
T
–40
2.5
2.5
25
—
—
125*
5.5
°C
V
A
V
DD1
DD2
Supply Voltage
V
5.5
V
*Note: The maximum ambient temperature is dependent on data frequency, output loading, number of operating channels,
and supply voltage.
Table 2. Electrical Characteristics
(VDD1 = 5 V ±10%, VDD2 = 5 V ±10%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
VDD Undervoltage
Threshold
VDDUV+
V
, V
rising
1.95
2.24
2.375
V
DD1
DD2
VDD Undervoltage
Threshold
VDDUV–
V
, V
falling
1.88
50
2.16
70
2.325
95
V
mV
V
DD1
DD2
VDD Undervoltage
Hysteresis
VDD
HYS
Positive-Going Input Thresh-
old
VT+
VT–
All inputs rising
1.4
1.0
1.67
1.23
1.9
Negative-Going Input
Threshold
All inputs falling
1.4
V
Input Hysteresis
V
0.38
2.0
—
0.44
—
0.50
—
V
V
V
HYS
V
High Level Input Voltage
Low Level Input Voltage
IH
V
—
0.8
—
IL
V
,V
4.8
DD1
D
V
loh = –4 mA
lol = 4 mA
V
High Level Output Voltage
OH
– 0.4
D2
V
—
0.2
—
0.4
±10
—
V
Low Level Output Voltage
Input Leakage Current
OL
I
—
µA
L
1
Z
—
50
Output Impedance
O
I
V
= V
IH
—
2.0
2.0
—
µA
µA
Enable Input High Current
ENH
ENx
I
V
= V
IL
—
—
Enable Input Low Current
ENL
ENx
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
4
Rev. 1.4
Si8630/31/35
Table 2. Electrical Characteristics (Continued)
(VDD1 = 5 V ±10%, VDD2 = 5 V ±10%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DC Supply Current (All inputs 0 V or at Supply)
Si8630Bx, Ex, Si8635Bx
V = 0(Bx), 1(Ex)
—
—
—
—
0.9
1.9
4.6
1.9
1.6
3.0
7.4
3.0
V
I
DD1
V = 0(Bx), 1(Ex)
mA
V
I
DD2
V = 1(Bx), 0(Ex)
V
I
DD1
V = 1(Bx), 0(Ex)
V
I
DD2
Si8631Bx, Ex
V = 0(Bx), 1(Ex)
—
—
—
—
1.3
1.7
3.9
3.0
2.1
2.7
5.9
4.5
V
I
DD1
V = 0(Bx), 1(Ex)
mA
V
I
DD2
V = 1(Bx), 0(Ex)
V
I
DD1
V = 1(Bx), 0(Ex)
V
I
DD2
1 Mbps Supply Current (All inputs = 500 kHz square wave, CI = 15 pF on all outputs)
Si8630Bx, Ex, Si8635Bx
—
—
2.8
2.2
3.9
3.1
V
V
DD1
DD2
mA
mA
Si8631Bx, Ex
—
—
2.7
2.6
3.8
3.6
V
V
DD1
DD2
10 Mbps Supply Current (All inputs = 5 MHz square wave, CI = 15 pF on all outputs)
Si8630Bx, Ex, Si8635Bx
—
—
2.8
3.1
3.9
4.3
V
V
DD1
DD2
mA
mA
Si8631Bx, Ex
—
—
3.0
3.1
4.2
4.4
V
V
DD1
DD2
100 Mbps Supply Current (All inputs = 50 MHz square wave, CI = 15 pF on all outputs)
Si8630Bx, Ex, Si8635Bx
—
—
2.8
13.2
3.9
17.8
V
V
DD1
DD2
mA
mA
Si8631Bx, Ex
—
—
6.6
9.9
8.8
13.4
V
V
DD1
DD2
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
Rev. 1.4
5
Si8630/31/35
Table 2. Electrical Characteristics (Continued)
(VDD1 = 5 V ±10%, VDD2 = 5 V ±10%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Timing Characteristics
Si863xBx, Ex
0
—
—
150
5.0
13
Mbps
ns
Maximum Data Rate
Minimum Pulse Width
Propagation Delay
—
5.0
—
t
, t
See Figure 2
See Figure 2
8.0
0.2
ns
PHL PLH
Pulse Width Distortion
4.5
PWD
ns
|t
- t
|
PLH PHL
2
t
—
—
2.0
0.4
4.5
2.5
ns
ns
Propagation Delay Skew
Channel-Channel Skew
All Models
PSK(P-P)
t
PSK
C = 15 pF
See Figure 2
L
t
—
2.5
4.0
ns
Output Rise Time
r
C = 15 pF
L
t
—
—
35
2.5
350
50
4.0
—
ns
ps
Output Fall Time
f
See Figure 2
See Figure 8
V = V or 0 V
Peak Eye Diagram Jitter
t
JIT(PK)
Common Mode
Transient Immunity
I
DD
CMTI
—
kV/µs
V
= 1500 V (see Figure 3)
CM
t
See Figure 1
—
—
—
6.0
8.0
15
11
12
40
ns
ns
µs
Enable to Data Valid
en1
t
See Figure 1
Enable to Data Tri-State
en2
3
t
Start-up Time
SU
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
6
Rev. 1.4
Si8630/31/35
ENABLE
OUTPUTS
ten1
ten2
Figure 1. ENABLE Timing Diagram
1.4 V
Typical
Input
tPLH
tPHL
90%
10%
90%
10%
1.4 V
Typical
Output
tr
tf
Figure 2. Propagation Delay Timing
Rev. 1.4
7
Si8630/31/35
3 to 5 V
Supply
Si86xx
VDD1
VDD2
Input
INPUT
Signal
OUTPUT
Switch
3 to 5 V
Isolated
Supply
Oscilloscope
GND1
GND2
Isolated
Ground
High Voltage
Differential
Probe
Output
Input
Vcm Surge
Output
High Voltage
Surge Generator
Figure 3. Common-Mode Transient Immunity Test Circuit
8
Rev. 1.4
Si8630/31/35
Table 3. Electrical Characteristics
(VDD1 = 3.3 V ±10%, VDD2 = 3.3 V ±10%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
VDD Undervoltage
Threshold
VDDUV+
V
, V
rising
1.95
2.24
2.375
V
DD1
DD2
VDD Undervoltage
Threshold
VDDUV–
V
, V
falling
1.88
50
2.16
70
2.325
95
V
mV
V
DD1
DD2
VDD Undervoltage
Hysteresis
VDD
HYS
Positive-Going Input
Threshold
VT+
VT–
All inputs rising
1.4
1.0
1.67
1.23
1.9
Negative-Going Input
Threshold
All inputs falling
1.4
V
Input Hysteresis
V
0.38
2.0
—
0.44
—
0.50
—
V
V
V
HYS
V
High Level Input Voltage
Low Level Input Voltage
IH
V
—
0.8
—
IL
High Level Output Volt-
age
V
,V
– 0.4
3.1
DD1 DD2
V
loh = –4 mA
lol = 4 mA
V
V
OH
Low Level Output Volt-
age
—
0.2
0.4
V
OL
I
—
—
—
±10
—
µA
Input Leakage Current
L
1
Z
50
Output Impedance
O
Enable Input High Cur-
rent
I
V
= V
IH
—
—
2.0
2.0
—
—
µA
µA
ENH
ENx
Enable Input Low Cur-
rent
I
V
= V
ENx IL
ENL
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
Rev. 1.4
9
Si8630/31/35
Table 3. Electrical Characteristics (Continued)
(VDD1 = 3.3 V ±10%, VDD2 = 3.3 V ±10%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
mA
DC Supply Current (All inputs 0 V or at supply)
Si8630Bx, Ex,
Si8635Bx
V = 0(Bx), 1(Ex)
—
—
—
—
0.9
1.9
4.6
1.9
1.6
3.0
7.4
3.0
I
V
V
V
V
DD1
DD2
DD1
DD2
V = 0(Bx), 1(Ex)
I
V = 1(Bx), 0(Ex)
I
V = 1(Bx), 0(Ex)
I
Si8631Bx, Ex
V = 0(Bx), 1(Ex)
—
—
—
—
1.3
1.7
3.9
3.0
2.1
2.7
5.9
4.5
V
I
DD1
V = 0(Bx), 1(Ex)
V
I
DD2
mA
V = 1(Bx), 0(Ex)
V
I
DD1
V = 1(Bx), 0(Ex)
V
I
DD2
1 Mbps Supply Current (All inputs = 500 kHz square wave, CI = 15 pF on all outputs)
Si8630Bx, Ex,
Si8635Bx
—
—
2.8
2.2
3.9
3.1
mA
mA
V
V
DD1
DD2
Si8631Bx, Ex
—
—
2.7
2.6
3.8
3.6
V
V
DD1
DD2
10 Mbps Supply Current (All inputs = 5 MHz square wave, CI = 15 pF on all outputs)
Si8630Bx, Ex,
Si8635Bx
—
—
2.8
2.6
3.9
3.6
mA
mA
V
V
DD1
DD2
Si8631Bx, Ex
—
—
2.8
2.8
4.0
3.9
V
V
DD1
DD2
100 Mbps Supply Current (All inputs = 50 MHz square wave, CI = 15 pF on all outputs)
Si8630Bx, Ex,
Si8635Bx
—
—
2.8
9.3
3.9
12.5
mA
mA
V
V
DD1
DD2
Si8631Bx, Ex
—
—
5.2
7.3
7.0
9.8
V
V
DD1
DD2
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
10
Rev. 1.4
Si8630/31/35
Table 3. Electrical Characteristics (Continued)
(VDD1 = 3.3 V ±10%, VDD2 = 3.3 V ±10%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Timing Characteristics
Si863xBx, Ex
0
—
—
150
5.0
13
Mbps
ns
Maximum Data Rate
Minimum Pulse Width
Propagation Delay
—
5.0
—
t
, t
See Figure 2
See Figure 2
8.0
0.2
ns
PHL PLH
Pulse Width Distortion
4.5
PWD
ns
|t
- t
|
PLH PHL
Propagation Delay
Skew
—
—
2.0
0.4
4.5
2.5
t
ns
ns
2
PSK(P-P)
t
Channel-Channel Skew
PSK
All Models
C = 15 pF
See Figure 2
L
t
—
2.5
4.0
ns
Output Rise Time
r
C = 15 pF
See Figure 2
L
t
—
—
2.5
4.0
—
ns
ps
Output Fall Time
f
Peak Eye Diagram Jitter
t
See Figure 8
350
JIT(PK)
V = V or 0 V
I
DD
Common Mode
Transient Immunity
CMTI
35
50
—
kV/µs
V
= 1500 V (see
CM
Figure 3)
t
See Figure 1
See Figure 1
—
—
—
6.0
8.0
15
11
12
40
ns
ns
µs
Enable to Data Valid
en1
t
Enable to Data Tri-State
en2
3
t
Startup Time
SU
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
Rev. 1.4
11
Si8630/31/35
Table 4. Electrical Characteristics
(VDD1 = 2.5 V ±5%, VDD2 = 2.5 V ±5%, TA = –40 to 125 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
VDD Undervoltage Thresh- VDDUV+
old
V
, V
rising
1.95
2.24
2.375
V
DD1
DD2
VDD Undervoltage Thresh- VDDUV–
old
V
, V
falling
1.88
50
2.16
70
2.325
95
V
mV
V
DD1
DD2
VDD Undervoltage
Hysteresis
VDD
HYS
Positive-Going Input
Threshold
VT+
VT–
All inputs rising
1.4
1.0
1.67
1.23
1.9
Negative-Going Input
Threshold
All inputs falling
1.4
V
Input Hysteresis
V
0.38
2.0
—
0.44
—
0.50
—
V
V
V
HYS
V
High Level Input Voltage
Low Level Input Voltage
IH
V
—
0.8
—
IL
V
,V
2.3
DD1
D
V
loh = –4 mA
lol = 4 mA
V
High Level Output Voltage
OH
– 0.4
D2
V
—
0.2
—
0.4
±10
—
V
Low Level Output Voltage
Input Leakage Current
OL
I
—
µA
L
1
Z
—
50
Output Impedance
O
I
V
= V
IH
—
2.0
2.0
—
µA
µA
Enable Input High Current
Enable Input Low Current
ENH
ENx
I
V
= V
IL
—
—
ENL
ENx
DC Supply Current (All inputs 0 V or at supply)
Si8630Bx, Ex, Si8635Bx
V = 0(Bx), 1(Ex)
—
—
—
—
0.9
1.9
4.6
1.9
1.6
3.0
7.4
3.0
V
I
DD1
V = 0(Bx), 1(Ex)
V
I
DD2
mA
mA
V = 1(Bx), 0(Ex)
V
I
DD1
V = 1(Bx), 0(Ex)
V
I
DD2
Si8631Bx, Ex
V = 0(Bx), 1(Ex)
—
—
—
—
1.3
1.7
3.9
3.0
2.1
2.7
5.9
4.5
V
I
DD1
V = 0(Bx), 1(Ex)
V
I
DD2
V = 1(Bx), 0(Ex)
V
I
DD1
V = 1(Bx), 0(Ex)
V
I
DD2
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
12
Rev. 1.4
Si8630/31/35
Table 4. Electrical Characteristics (Continued)
(VDD1 = 2.5 V ±5%, VDD2 = 2.5 V ±5%, TA = –40 to 125 °C)
Parameter
1 Mbps Supply Current (All inputs = 500 kHz square wave, CI = 15 pF on all outputs)
Si8630Bx, Ex, Si8635Bx
Symbol
Test Condition
Min
Typ
Max
Unit
—
—
2.8
2.2
3.9
3.1
V
V
DD1
DD2
mA
mA
Si8631Bx, Ex
V
V
—
—
2.7
2.6
3.8
3.6
DD1
DD2
10 Mbps Supply Current (All inputs = 5 MHz square wave, CI = 15 pF on all outputs)
Si8630Bx, Ex, Si8635Bx
—
—
2.8
2.4
3.9
3.3
V
V
DD1
DD2
mA
mA
Si8631Bx, Ex
—
—
2.8
2.7
3.9
3.7
V
V
DD1
DD2
100 Mbps Supply Current (All inputs = 50 MHz square wave, CI = 15 pF on all outputs)
Si8630Bx, Ex, Si8635Bx
—
—
2.8
7.5
3.9
10.1
V
V
DD1
DD2
mA
mA
Si8631Bx, Ex
—
—
4.5
6.1
6.1
8.2
V
V
DD1
DD2
Timing Characteristics
Si863xBx, Ex
0
—
—
150
5.0
14
Mbps
ns
Maximum Data Rate
Minimum Pulse Width
Propagation Delay
—
5.0
—
t
, t
See Figure 2
See Figure 2
8.0
0.2
ns
PHL PLH
Pulse Width Distortion
5.0
PWD
ns
|t
- t
|
PLH PHL
2
t
—
—
2.0
0.4
5.0
2.5
ns
ns
Propagation Delay Skew
PSK(P-P)
t
Channel-Channel Skew
PSK
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
Rev. 1.4
13
Si8630/31/35
Table 4. Electrical Characteristics (Continued)
(VDD1 = 2.5 V ±5%, VDD2 = 2.5 V ±5%, TA = –40 to 125 °C)
Parameter
All Models
Symbol
Test Condition
Min
Typ
Max
Unit
C = 15 pF
See Figure 2
L
t
—
2.5
4.0
ns
Output Rise Time
r
C = 15 pF
L
t
—
—
35
2.5
350
50
4.0
—
ns
ps
Output Fall Time
f
See Figure 2
See Figure 8
V = V or 0 V
Peak Eye Diagram Jitter
t
JIT(PK)
Common Mode
Transient Immunity
I
DD
CMTI
—
kV/µs
V
= 1500 V (see Figure 3)
CM
t
See Figure 1
—
—
—
6.0
8.0
15
11
12
40
ns
ns
µs
Enable to Data Valid
en1
t
See Figure 1
Enable to Data Tri-State
en2
3
t
Startup Time
SU
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
Table 5. Regulatory Information*
CSA
The Si863x is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873.
61010-1: Up to 600 V
reinforced insulation working voltage; up to 600 V
basic insulation working voltage.
RMS
RMS
RMS
60950-1: Up to 600 V
age.
reinforced insulation working voltage; up to 1000 V
basic insulation working volt-
RMS
60601-1: Up to 125 V
reinforced insulation working voltage; up to 380 V
basic insulation working voltage.
RMS
RMS
VDE
The Si863x is certified according to IEC 60747-5-2. For more details, see File 5006301-4880-0001.
60747-5-2: Up to 1200 V for basic insulation working voltage.
peak
60950-1: Up to 600 V
age.
reinforced insulation working voltage; up to 1000 V
basic insulation working volt-
RMS
RMS
UL
The Si863x is certified under UL1577 component recognition program. For more details, see File E257455.
Rated up to 5000 V
isolation voltage for basic protection.
RMS
CQC
The Si863x is certified under GB4943.1-2011. For more details, see File V2012CQC001041.
Rated up to 600 V reinforced insulation working voltage; up to 1000 V basic insulation working voltage.
RMS
RMS
*Note: Regulatory Certifications apply to 2.5 kVRMS rated devices which are production tested to 3.0 kVRMS for 1 sec.
Regulatory Certifications apply to 3.75 kVRMS rated devices which are production tested to 4.5 kVRMS for 1 sec.
Regulatory Certifications apply to 5.0 kVRMS rated devices which are production tested to 6.0 kVRMS for 1 sec.
For more information, see "5. Ordering Guide" on page 27.
14
Rev. 1.4
Si8630/31/35
Table 6. Insulation and Safety-Related Specifications
Value
Test
Condition
Parameter
Symbol
Unit
NB
WB
SOIC-16
SOIC-16
1
Nominal Air Gap (Clearance)
L(IO1)
L(IO2)
8.0
8.0
4.9
mm
mm
Nominal External Tracking
4.01
1
(Creepage)
Minimum Internal Gap
(Internal Clearance)
mm
0.014
0.014
Tracking Resistance
(Proof Tracking Index)
PTI
ED
IEC60112
f = 1 MHz
600
600
V
RMS
0.019
0.019
mm
Erosion Depth
2
12
12
Resistance (Input-Output)
R
10
10
IO
2
Capacitance (Input-Output)
C
2.0
4.0
2.0
4.0
pF
pF
IO
3
Input Capacitance
C
I
Notes:
1. The values in this table correspond to the nominal creepage and clearance values. VDE certifies the clearance and
creepage limits as 4.7 mm minimum for the NB SOIC-16 package and 8.5 mm minimum for the WB SOIC-16 package.
UL does not impose a clearance and creepage minimum for component-level certifications. CSA certifies the clearance
and creepage limits as 3.9 mm minimum for the NB SOIC-16 and 7.6 mm minimum for the WB SOIC-16 package.
2. To determine resistance and capacitance, the Si86xx is converted into a 2-terminal device. Pins 1–8 are shorted
together to form the first terminal and pins 9–16 are shorted together to form the second terminal. The parameters are
then measured between these two terminals.
3. Measured from input pin to ground.
Table 7. IEC 60664-1 (VDE 0844 Part 2) Ratings
Specification
Parameter
Test Conditions
NB SOIC-16
WB SOIC-16
Basic Isolation Group
Material Group
I
I
Rated Mains Voltages < 150 V
Rated Mains Voltages < 300 V
Rated Mains Voltages < 400 V
Rated Mains Voltages < 600 V
I-IV
I-III
I-II
I-II
I-IV
I-IV
I-III
I-III
RMS
RMS
RMS
RMS
Installation Classification
Rev. 1.4
15
Si8630/31/35
Table 8. IEC 60747-5-2 Insulation Characteristics for Si86xxxx*
Characteristic
Parameter
Symbol
Test Condition
Unit
WB
SOIC-16
NB SOIC-16
Maximum Working Insulation
Voltage
V
V
1200
630
Vpeak
IORM
Method b1
(V
x 1.875 = V , 100%
IORM
PR
V
2250
1182
Input to Output Test Voltage
PR
Production Test, t = 1 sec,
m
Partial Discharge < 5 pC)
t = 60 sec
6000
2
6000
2
Vpeak
Transient Overvoltage
IOTM
Pollution Degree
(DIN VDE 0110, Table 1)
Insulation Resistance at T ,
9
9
S
R
>10
>10
S
V
= 500 V
IO
*Note: Maintenance of the safety data is ensured by protective circuits. The Si86xxxx provides a climate classification of
40/125/21.
Table 9. IEC Safety Limiting Values1
Max
WB SOIC-16 NB SOIC-16
Parameter
Symbol
Test Condition
Unit
T
150
150
°C
Case Temperature
S
= 100 °C/W (WB SOIC-16),
105 °C/W (NB SOIC-16),
JA
Safety Input, Output, or
Supply Current
I
220
210
mA
S
V = 5.5 V, T = 150 °C, T = 25 °C
I
J
A
Device Power
Dissipation
P
275
275
mW
2
D
Notes:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 4 and 5.
2. The Si86xx is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle square
wave.
16
Rev. 1.4
Si8630/31/35
Table 10. Thermal Characteristics
Parameter
Symbol
WB SOIC-16
NB SOIC-16
Unit
IC Junction-to-Air Thermal Resistance
100
105
°C/W
JA
500
450
VDD1, VDD2 = 2.70 V
400
370
VDD1, VDD2 = 3.6 V
300
220
200
VDD1, VDD2 = 5.5 V
100
0
0
50
100
Temperature (ºC)
150
200
Figure 4. (WB SOIC-16) Thermal Derating Curve, Dependence of Safety Limiting Values
with Case Temperature per DIN EN 60747-5-2
500
430
V
DD1, VDD2 = 2.70 V
400
300
200
100
0
360
VDD1, VDD2 = 3.6 V
210
VDD1, VDD2 = 5.5 V
0
50
100
150
200
Temperature (ºC)
Figure 5. (NB SOIC-16) Thermal Derating Curve, Dependence of Safety Limiting Values
with Case Temperature per DIN EN 60747-5-2
Rev. 1.4
17
Si8630/31/35
Table 11. Absolute Maximum Ratings1
Parameter
Symbol
Min
–65
–40
Typ
—
Max
Unit
°C
2
Storage Temperature
T
150
125
150
7.0
STG
Operating Temperature
T
—
°C
A
Junction Temperature
Supply Voltage
T
—
—
—
°C
V
J
V
, V
–0.5
DD1
DD2
Input Voltage
V
–0.5
–0.5
—
—
—
—
—
V
V
+ 0.5
V
V
I
DD
DD
Output Voltage
V
+ 0.5
O
Output Current Drive Channel
Lead Solder Temperature (10 s)
I
10
mA
°C
O
—
260
Maximum Isolation (Input to Output) (1 sec)
NB SOIC-16
—
—
—
—
4500
V
RMS
RMS
Maximum Isolation (Input to Output) (1 sec)
WB SOIC-16
6500
V
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to conditions as specified in the operational sections of this data sheet.
2. VDE certifies storage temperature from –40 to 150 °C.
18
Rev. 1.4
Si8630/31/35
2. Functional Description
2.1. Theory of Operation
The operation of an Si863x channel is analogous to that of an opto coupler, except an RF carrier is modulated
instead of light. This simple architecture provides a robust isolated data path and requires no special
considerations or initialization at start-up. A simplified block diagram for a single Si863x channel is shown in
Figure 6.
Transmitter
Receiver
RF
OSCILLATOR
Semiconductor-
Based Isolation
Barrier
MODULATOR
DEMODULATOR
A
B
Figure 6. Simplified Channel Diagram
A channel consists of an RF Transmitter and RF Receiver separated by a semiconductor-based isolation barrier.
Referring to the Transmitter, input A modulates the carrier provided by an RF oscillator using on/off keying. The
Receiver contains a demodulator that decodes the input state according to its RF energy content and applies the
result to output B via the output driver. This RF on/off keying scheme is superior to pulse code schemes as it
provides best-in-class noise immunity, low power consumption, and better immunity to magnetic fields. See
Figure 7 for more details.
Input Signal
Modulation Signal
Output Signal
Figure 7. Modulation Scheme
Rev. 1.4
19
Si8630/31/35
2.2. Eye Diagram
Figure 8 illustrates an eye-diagram taken on an Si8630. For the data source, the test used an Anritsu (MP1763C)
Pulse Pattern Generator set to 1000 ns/div. The output of the generator's clock and data from an Si8630 were
captured on an oscilloscope. The results illustrate that data integrity was maintained even at the high data rate of
150 Mbps. The results also show that 2 ns pulse width distortion and 350 ps peak jitter were exhibited.
Figure 8. Eye Diagram
20
Rev. 1.4
Si8630/31/35
3. Device Operation
Device behavior during start-up, normal operation, and shutdown is shown in Figure 9, where UVLO+ and UVLO-
are the positive-going and negative-going thresholds respectively. Refer to Table 12 to determine outputs when
power supply (VDD) is not present. Additionally, refer to Table 13 for logic conditions when enable pins are used.
Table 12. Si86xx Logic Operation
V
EN
VDDI
VDDO
I
1,2
Comments
V Output
O
1,2,3,4
1,5,6
1,5,6
1,2
Input
State
State
Input
H
L
H or NC
H or NC
L
P
P
P
P
P
P
H
L
Enabled, normal operation.
7
8
X
Hi-Z
Disabled.
Upon transition of VDDI from unpowered to pow-
ered, V returns to the same state as V in less
than 1 µs.
9
L
7
X
H or NC
L
UP
UP
P
P
9
O
I
H
7
8
X
Hi-Z
Disabled.
Upon transition of VDDO from unpowered to
powered, V returns to the same state as V
Undetermined within 1 µs, if EN is in either the H or NC state.
Upon transition of VDDO from unpowered to
O
I
7
7
X
X
P
UP
powered, V returns to Hi-Z with 1 µs if EN is L.
O
Notes:
1. VDDI and VDDO are the input and output power supplies. VI and VO are the respective input and output terminals.
EN is the enable control input located on the same output side.
2. X = not applicable; H = Logic High; L = Logic Low; Hi-Z = High Impedance.
3. It is recommended that the enable inputs be connected to an external logic high or low level when the Si86xx is
operating in noisy environments.
4. No Connect (NC) replaces EN1 on Si8630/35. No Connect replaces EN2 on the Si8635.
No Connects are not internally connected and can be left floating, tied to VDD, or tied to GND.
5. “Powered” state (P) is defined as 2.5 V < VDD < 5.5 V.
6. “Unpowered” state (UP) is defined as VDD = 0 V.
7. Note that an I/O can power the die for a given side through an internal diode if its source has adequate current.
8. When using the enable pin (EN) function, the output pin state is driven into a high-impedance state when the EN pin is
disabled (EN = 0).
9. See "5. Ordering Guide" on page 27 for details. This is the selectable fail-safe operating mode (ordering option). Some
devices have default output state = H, and some have default output state = L, depending on the ordering part number
(OPN). For default high devices, the data channels have pull-ups on inputs/outputs. For default low devices, the data
channels have pull-downs on inputs/outputs.
Rev. 1.4
21
Si8630/31/35
Table 13. Enable Input Truth1
1,2
1,2
P/N
Operation
EN1
—
—
H
EN2
H
Si8630
Outputs B1, B2, B3 are enabled and follow input state.
Outputs B1, B2, B3 are disabled and in high impedance state.
Output A3 enabled and follows input state.
3
L
Si8631
X
3
L
X
Output A3 disabled and in high impedance state.
X
H
Outputs B1, B2 are enabled and follow input state.
3
X
L
Outputs B1, B2 are disabled and in high impedance state.
Si8635
—
—
Outputs B1, B2, B3 are enabled and follow input state.
Notes:
1. Enable inputs EN1 and EN2 can be used for multiplexing, for clock sync, or other output control. These inputs are
internally pulled-up to local VDD by a 2 µA current source allowing them to be connected to an external logic level (high
or low) or left floating. To minimize noise coupling, do not connect circuit traces to EN1 or EN2 if they are left floating. If
EN1, EN2 are unused, it is recommended they be connected to an external logic level, especially if the Si86xx is
operating in a noisy environment.
2. X = not applicable; H = Logic High; L = Logic Low.
3. When using the enable pin (EN) function, the output pin state is driven into a high-impedance state when the EN pin is
disabled (EN = 0).
22
Rev. 1.4
Si8630/31/35
3.1. Device Startup
Outputs are held low during powerup until VDD is above the UVLO threshold for time period tSTART. Following
this, the outputs follow the states of inputs.
3.2. Undervoltage Lockout
Undervoltage Lockout (UVLO) is provided to prevent erroneous operation during device startup and shutdown or
when VDD is below its specified operating circuits range. Both Side A and Side B each have their own
undervoltage lockout monitors. Each side can enter or exit UVLO independently. For example, Side A
unconditionally enters UVLO when V
falls below V
and exits UVLO when V rises above
DD1
DD1(UVLO–)
DD1
V
. Side B operates the same as Side A with respect to its V
supply.
DD2
DD1(UVLO+)
UVLO+
UVLO-
VDD1
UVLO+
UVLO-
VDD2
INPUT
tPHL
tPLH
tSD
tSTART
tSTART
tSTART
OUTPUT
Figure 9. Device Behavior during Normal Operation
Rev. 1.4
23
Si8630/31/35
3.3. Layout Recommendations
To ensure safety in the end user application, high voltage circuits (i.e., circuits with >30 V ) must be physically
AC
separated from the safety extra-low voltage circuits (SELV is a circuit with <30 V ) by a certain distance
AC
(creepage/clearance). If a component, such as a digital isolator, straddles this isolation barrier, it must meet those
creepage/clearance requirements and also provide a sufficiently large high-voltage breakdown protection rating
(commonly referred to as working voltage protection). Table 5 on page 14 and Table 6 on page 15 detail the
working voltage and creepage/clearance capabilities of the Si86xx. These tables also detail the component
standards (UL1577, IEC60747, CSA 5A), which are readily accepted by certification bodies to provide proof for
end-system specifications requirements. Refer to the end-system specification (61010-1, 60950-1, 60601-1, etc.)
requirements before starting any design that uses a digital isolator.
3.3.1. Supply Bypass
The Si863x family requires a 0.1 µF bypass capacitor between V
and GND1 and V
and GND2. The
DD2
DD1
capacitor should be placed as close as possible to the package. To enhance the robustness of a design, the user
may also include resistors (50–300 ) in series with the inputs and outputs if the system is excessively noisy.
3.3.2. Output Pin Termination
The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination
of the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving
loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
3.4. Fail-Safe Operating Mode
Si86xx devices feature a selectable (by ordering option) mode whereby the default output state (when the input
supply is unpowered) can either be a logic high or logic low when the output supply is powered. See Table 12 on
page 21 and "5. Ordering Guide" on page 27 for more information.
24
Rev. 1.4
Si8630/31/35
3.5. Typical Performance Characteristics
The typical performance characteristics depicted in the following diagrams are for information purposes only. Refer
to Tables 2, 3, and 4 for actual specification limits.
30.0
25.0
20.0
15.0
10.0
5.0
30.0
25.0
20.0
15.0
10.0
5.0
5V
5V
3.3V
2.5V
3.3V
2.5V
0.0
0.0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Data Rate (Mbps)
Data Rate (Mbps)
Figure 13. Si8630/35 Typical VDD2 Supply
Current vs. Data Rate 5, 3.3, and 2.5 V
Operation (15 pF Load)
Figure 10. Si8630/35 Typical VDD1 Supply
Current vs. Data Rate 5, 3.3, and 2.5 V
Operation
30.0
25.0
20.0
30.0
25.0
20.0
15.0
10.0
5.0
15.0
10.0
5.0
5V
5V
3.3V
2.5V
3.3V
2.5V
0.0
0.0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Data Rate (Mbps)
Data Rate (Mbps)
Figure 11. Si8631 Typical VDD1 Supply Current
vs. Data Rate 5, 3.3, and 2.5 V Operation
Figure 14. Si8631 Typical VDD2 Supply Current
vs. Data Rate 5, 3.3, and 2.5 V Operation
(15 pF Load)
10.0
9.0
8.0
7.0
6.0
5.0
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100110120
Temperature (Degrees C)
Figure 12. Propagation Delay vs. Temperature
Rev. 1.4
25
Si8630/31/35
4. Pin Descriptions
VDD1
VDD2
GND2
B1
VDD1
VDD2
GND2
B1
GND1
GND1
I
s
o
l
I
s
o
l
RF
XMITR
RF
RCVR
RF
XMITR
RF
RCVR
A1
A2
A1
A2
RF
XMITR
RF
RCVR
RF
XMITR
RF
RCVR
B2
B2
a
t
i
o
n
a
t
i
o
n
RF
RCVR
RF
XMITR
RF
XMITR
RF
RCVR
A3
NC
B3
A3
NC
B3
NC
EN2
NC
EN1
EN2/NC
NC
GND1
GND2
GND1
GND2
Si8631
Si8630/35
Name
SOIC-16 Pin#
Type
Description
V
1
Supply
Side 1 power supply.
Side 1 ground.
DD1
1
GND1
A1
2
Ground
Digital Input
Digital Input
Digital I/O
NA
3
4
5
6
7
Side 1 digital input.
Side 1 digital input.
A2
A3
Side 1 digital input or output.
No Connect.
NC
2
2
EN1/NC
GND1
GND2
EN2/NC
NC
Digital Input
Ground
Side 1 active high enable. NC on Si8630/35
Side 1 ground.
1
8
9
1
Ground
Side 2 ground.
10
11
12
13
14
Digital Input
NA
Side 2 active high enable. NC on Si8635.
No Connect.
B3
Digital I/O
Side 2 digital input or output.
B2
Digital Output Side 2 digital output.
Digital Output Side 2 digital output.
B1
1
GND2
15
16
Ground
Supply
Side 2 ground.
V
Side 2 power supply.
DD2
Notes:
1. For narrow-body devices, Pin 2 and Pin 8 GND must be externally connected to respective ground. Pin 9 and Pin 15
must also be connected to external ground.
2. No Connect. These pins are not internally connected. They can be left floating, tied to VDD or tied to GND.
26
Rev. 1.4
Si8630/31/35
5. Ordering Guide
Table 14. Ordering Guide for Valid OPNs1,2,3
Ordering Part Number of Number of Max Data Default
Isol
Temp Range (°C)
Package
Number (OPN)
Inputs
VDD1 Side VDD2 Side
Inputs
Rate
(Mbps)
Output
State
Rating
(kVrms)
Si8630BB-B-IS
Si8630BB-B-IS1
Si8630BC-B-IS1
Si8630EC-B-IS1
Si8630BD-B-IS
Si8630ED-B-IS
Si8631BB-B-IS
Si8631BB-B-IS1
Si8631BC-B-IS1
Si8631EC-B-IS1
Si8631BD-B-IS
Si8631ED-B-IS
Si8635BB-B-IS
Si8635BC-B-IS1
Si8635BD-B-IS
Notes:
3
3
3
3
3
3
2
2
2
2
2
2
3
3
3
0
0
0
0
0
0
1
1
1
1
1
1
0
0
0
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Low
Low
Low
High
Low
High
Low
Low
Low
High
Low
High
Low
Low
Low
2.5
2.5
3.75
3.75
5
–40 to +125 °C WB SOIC-16
–40 to +125 °C NB SOIC-16
–40 to +125 °C NB SOIC-16
–40 to +125 °C NB SOIC-16
–40 to +125 °C WB SOIC-16
–40 to +125 °C WB SOIC-16
–40 to +125 °C WB SOIC-16
–40 to +125 °C NB SOIC-16
–40 to +125 °C NB SOIC-16
–40 to +125 °C NB SOIC-16
–40 to +125 °C WB SOIC-16
–40 to +125 °C WB SOIC-16
–40 to +125 °C WB SOIC-16
–40 to +125 °C NB SOIC-16
–40 to +125 °C WB SOIC-16
5
2.5
2.5
3.75
3.75
5
5
2.5
3.75
5
1. All packages are RoHS-compliant with peak reflow temperatures of 260 °C according to the JEDEC industry standard
classifications and peak solder temperatures.
Moisture sensitivity level is MSL3 for wide-body SOIC-16 packages.
Moisture sensitivity level is MSL2A narrow-body SOIC-16 packages.
2. All devices >1 kVRMS are AEC-Q100 qualified.
3. “Si” and “SI” are used interchangeably.
Rev. 1.4
27
Si8630/31/35
6. Package Outline: 16-Pin Wide Body SOIC
Figure 15 illustrates the package details for the Triple-Channel Digital Isolator. Table 15 lists the values for the
dimensions shown in the illustration.
Figure 15. 16-Pin Wide Body SOIC
28
Rev. 1.4
Si8630/31/35
Table 15. Package Diagram Dimensions
Dimension
Min
—
Max
2.65
0.30
—
A
A1
A2
b
0.10
2.05
0.31
0.20
0.51
0.33
c
D
10.30 BSC
10.30 BSC
7.50 BSC
1.27 BSC
E
E1
e
L
0.40
0.25
0°
1.27
0.75
8°
h
aaa
bbb
ccc
ddd
eee
fff
—
—
0.10
0.33
0.10
0.25
0.10
0.20
—
—
—
—
Notes:
1. All dimensions shown are in millimeters (mm) unless otherwise noted.
2. Dimensioning and Tolerancing per ANSI Y14.5M-1994.
3. This drawing conforms to JEDEC Outline MS-013, Variation AA.
4. Recommended reflow profile per JEDEC J-STD-020C specification for
small body, lead-free components.
Rev. 1.4
29
Si8630/31/35
7. Land Pattern: 16-Pin Wide-Body SOIC
Figure 16 illustrates the recommended land pattern details for the Si863x in a 16-pin wide-body SOIC. Table 16
lists the values for the dimensions shown in the illustration.
Figure 16. 16-Pin SOIC Land Pattern
Table 16. 16-Pin Wide Body SOIC Land Pattern Dimensions
Dimension
Feature
Pad Column Spacing
Pad Row Pitch
Pad Width
(mm)
9.40
1.27
0.60
1.90
C1
E
X1
Y1
Pad Length
Notes:
1. This Land Pattern Design is based on IPC-7351 pattern SOIC127P1032X265-16AN
for Density Level B (Median Land Protrusion).
2. All feature sizes shown are at Maximum Material Condition (MMC) and a card
fabrication tolerance of 0.05 mm is assumed.
30
Rev. 1.4
Si8630/31/35
8. Package Outline: 16-Pin Narrow Body SOIC
Figure 17 illustrates the package details for the Si863x in a 16-pin narrow-body SOIC (SO-16). Table 17 lists the
values for the dimensions shown in the illustration.
Figure 17. 16-pin Small Outline Integrated Circuit (SOIC) Package
Rev. 1.4
31
Si8630/31/35
Table 17. Package Diagram Dimensions
Dimension
Min
—
Max
1.75
0.25
—
A
A1
A2
b
0.10
1.25
0.31
0.17
0.51
0.25
c
D
9.90 BSC
6.00 BSC
3.90 BSC
1.27 BSC
E
E1
e
L
0.40
1.27
L2
h
0.25 BSC
0.25
0°
0.50
8°
θ
aaa
bbb
ccc
ddd
0.10
0.20
0.10
0.25
Notes:
1. All dimensions shown are in millimeters (mm) unless otherwise noted.
2. Dimensioning and Tolerancing per ANSI Y14.5M-1994.
3. This drawing conforms to the JEDEC Solid State Outline MS-012, Variation AC.
4. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification
for Small Body Components.
32
Rev. 1.4
Si8630/31/35
9. Land Pattern: 16-Pin Narrow Body SOIC
Figure 18 illustrates the recommended land pattern details for the Si863x in a 16-pin narrow-body SOIC. Table 18
lists the values for the dimensions shown in the illustration.
Figure 18. 16-Pin Narrow Body SOIC PCB Land Pattern
Table 18. 16-Pin Narrow Body SOIC Land Pattern Dimensions
Dimension
Feature
Pad Column Spacing
Pad Row Pitch
Pad Width
(mm)
5.40
1.27
0.60
1.55
C1
E
X1
Y1
Pad Length
Notes:
1. This Land Pattern Design is based on IPC-7351 pattern SOIC127P600X165-16N
for Density Level B (Median Land Protrusion).
2. All feature sizes shown are at Maximum Material Condition (MMC) and a card
fabrication tolerance of 0.05 mm is assumed.
Rev. 1.4
33
Si8630/31/35
10. Top Markings
10.1. Si863x Top Marking (16-Pin Wide Body SOIC)
Si86XYSV
YYWWRTTTTT
e4
TW
10.2. Top Marking Explanation (16-Pin Wide Body SOIC)
Si86 = Isolator product series
XY = Channel Configuration
X = # of data channels (3, 2, 1)
Y = # of reverse channels (1, 0)*
S = Speed Grade (max data rate) and operating mode:
A = 1 Mbps (default output = low)
Base Part Number
Ordering Options
Line 1 Marking:
(See Ordering Guide for more
information).
B = 150 Mbps (default output = low)
D = 1 Mbps (default output = high)
E = 150 Mbps (default output = high)
V = Insulation rating
A = 1 kV; B = 2.5 kV; C = 3.75 kV; D = 5.0 kV
YY = Year
WW = Workweek
Assigned by assembly subcontractor. Corresponds to the
year and workweek of the mold date.
Line 2 Marking:
Line 3 Marking:
RTTTTT = Mfg Code
Manufacturing code from assembly house
“R” indicates revision
Circle = 1.7 mm Diameter
(Center-Justified)
“e4” Pb-Free Symbol
TW = Taiwan
Country of Origin ISO Code
Abbreviation
*Note: Si8635 has 0 reverse channels.
34
Rev. 1.4
Si8630/31/35
10.3. Si863x Top Marking (16-Pin Narrow Body SOIC)
Si86XYSV
YYWWRTTTTT
e3
10.4. Top Marking Explanation (16-Pin Narrow Body SOIC)
Line 1 Marking:
Base Part Number
Ordering Options
Si86 = Isolator product series
XY = Channel Configuration
X = # of data channels (3, 2, 1)
(See Ordering Guide for more
information).
Y = # of reverse channels (1, 0)*
S = Speed Grade (max data rate) and operating mode:
A = 1 Mbps (default output = low)
B = 150 Mbps (default output = low)
D = 1 Mbps (default output = high)
E = 150 Mbps (default output = high)
V = Insulation rating
A = 1 kV; B = 2.5 kV; C = 3.75 kV
Line 2 Marking:
Circle = 1.2 mm Diameter
“e3” Pb-Free Symbol
YY = Year
WW = Work Week
Assigned by the Assembly House. Corresponds to the
year and work week of the mold date.
RTTTTT = Mfg Code
Manufacturing code from assembly house
“R” indicates revision
Circle = 1.2 mm diameter
“e3” Pb-Free Symbol.
*Note: Si8635 has 0 reverse channels.
Rev. 1.4
35
Si8630/31/35
Revision 1.3 to Revision 1.4
DOCUMENT CHANGE LIST
Revision 0.1 to Revision 0.2
Added Figure 3, “Common-Mode Transient
Immunity Test Circuit,” on page 8.
Added chip graphics on page 1.
Moved Tables 1 and 11 to page 18.
Added references to CQC throughout.
Added references to 2.5 kV
devices throughout.
RMS
Updated Table 6, “Insulation and Safety-Related
Updated "5. Ordering Guide" on page 27.
Specifications,” on page 15.
Updated "10.1. Si863x Top Marking (16-Pin Wide
Updated Table 8, “IEC 60747-5-2 Insulation
Body SOIC)" on page 34.
Characteristics for Si86xxxx*,” on page 16.
Moved Table 12 to page 21.
Moved Table 13 to page 22.
Moved “Typical Performance Characteristics” to
page 25.
Updated "4. Pin Descriptions" on page 26.
Updated "5. Ordering Guide" on page 27.
Removed references to QSOP-16 package.
Revision 0.2 to Revision 1.0
Reordered spec tables to conform to new
convention.
Removed “pending” throughout document.
Revision 1.0 to Revision 1.1
Updated High Level Output Voltage VOH to 3.1 V in
Table 3, “Electrical Characteristics,” on page 9.
Updated High Level Output Voltage VOH to 2.3 V in
Table 4, “Electrical Characteristics,” on page 12.
Revision 1.1 to Revision 1.2
Updated "5. Ordering Guide" on page 27 to include
MSL2A.
Revision 1.2 to Revision 1.3
Updated Table 11 on page 18.
Added junction temperature spec.
Updated "3.3.1. Supply Bypass" on page 24.
Removed “3.3.2. Pin Connections” on page 23.
Updated "4. Pin Descriptions" on page 26.
Updated table notes.
Updated "5. Ordering Guide" on page 27.
Removed Rev A devices.
Updated "7. Land Pattern: 16-Pin Wide-Body SOIC"
on page 30.
Updated Top Marks.
Added revision description.
36
Rev. 1.4
Si8630/31/35
NOTES:
Rev. 1.4
37
Si8630/31/35
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38
Rev. 1.4
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