SST32HF1641C-70-4E-LSE
更新时间:2024-09-18 14:12:02
品牌:SILICON
描述:Memory Circuit, 1MX16, CMOS, PBGA62, 8 X 10 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, MO-210, LFBGA-62
SST32HF1641C-70-4E-LSE 概述
Memory Circuit, 1MX16, CMOS, PBGA62, 8 X 10 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, MO-210, LFBGA-62 其他内存集成电路
SST32HF1641C-70-4E-LSE 规格参数
生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | LFBGA, | 针数: | 62 |
Reach Compliance Code: | unknown | HTS代码: | 8542.32.00.71 |
风险等级: | 5.84 | 其他特性: | SRAM IS ORGANIZED AS 256K X 16 |
JESD-30 代码: | R-PBGA-B62 | 长度: | 10 mm |
内存密度: | 16777216 bit | 内存集成电路类型: | MEMORY CIRCUIT |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 62 | 字数: | 1048576 words |
字数代码: | 1000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -20 °C |
组织: | 1MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | LFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, LOW PROFILE, FINE PITCH | 认证状态: | Not Qualified |
座面最大高度: | 1.4 mm | 最大供电电压 (Vsup): | 3.3 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL EXTENDED | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
宽度: | 8 mm | Base Number Matches: | 1 |
SST32HF1641C-70-4E-LSE 数据手册
通过下载SST32HF1641C-70-4E-LSE数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
SST32HF324 / 32832Mb Flash + 4Mb SRAM, 32Mb Flash + 8Mb SRAM
Preliminary Specifications
(x16) MCP ComboMemories
FEATURES:
•
ComboMemories organized as:
•
•
•
Security-ID Feature
– SST32HF1621C: 1M x16 Flash + 128K x16 SRAM
– SST32HF1641x: 1M x16 Flash + 256K x16 SRAM
– SST32HF1681: 1M x16 Flash + 256K x16 SRAM
– SST32HF3241x: 2M x16 Flash + 256K x16 SRAM
– SST32HF3281: 2M x16 Flash + 512K x16 SRAM
– SST: 128 bits; User: 128 bits
Hardware Block-Protection/WP# Input Pin
– Bottom Block-Protection (bottom 32 KWord)
Fast Read Access Times:
– Flash: 70 ns
– SRAM: 70 ns
•
•
Single 2.7-3.3V Read and Write Operations
Concurrent Operation
•
•
Latched Address and Data for Flash
Flash Fast Erase and Word-Program:
– Read from or Write to SRAM while
Erase/Program Flash
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 µs (typical)
•
•
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption:
•
•
Flash Automatic Erase and Program Timing
– Internal VPP Generation
– Active Current: 15 mA (typical) for
Flash or SRAM Read
– Standby Current:
Flash End-of-Write Detection
- SST32HFx1: 60 µA (typical)
- SST32HFx1C: 12 µA (typical)
– Toggle Bit
– Data# Polling
•
•
Flexible Erase Capability
•
•
•
CMOS I/O Compatibility
JEDEC Standard Command Set
Package Available
– Uniform 2 KWord sectors
– Uniform 32 KWord size blocks
Erase-Suspend/Erase-Resume Capabilities
– 63-ball LFBGA (8mm x 10mm x 1.4mm)
– 62-ball LFBGA (8mm x 10mm x 1.4mm)
•
All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST32HFx1/x1C ComboMemory devices integrate
a CMOS flash memory bank with a CMOS SRAM mem-
ory bank in a Multi-Chip Package (MCP), manufactured
with SST’s proprietary, high performance SuperFlash
technology. The SST32HF16x1/32x1 devices use a
PseudoSRAM. The SST32HF16x1C/32x1C devices use
standard SRAM.
signals. The SRAM bank enable signal, BES# selects the
SRAM bank. The flash memory bank enable signal, BEF#
selects the flash memory bank. The WE# signal has to be
used with Software Data Protection (SDP) command
sequence when controlling the Erase and Program opera-
tions in the flash memory bank. The SDP command
sequence protects the data stored in the flash memory
bank from accidental alteration.
Featuring high performance Word-Program, the flash
memory bank provides a maximum Word-Program time of
7 µsec. To protect against inadvertent flash write, the
SST32HFx1/x1C devices contain on-chip hardware and
software data protection schemes. The SST32HFx1/x1C
devices offer a guaranteed endurance of 10,000 cycles.
Data retention is rated at greater than 100 years.
The SST32HFx1/x1C provide the added functionality of
being able to simultaneously read from or write to the
SRAM bank while erasing or programming in the flash
memory bank. The SRAM memory bank can be read or
written while the flash memory bank performs Sector-
Erase, Bank-Erase, or Word-Program concurrently. All
flash memory Erase and Program operations will automati-
cally latch the input address and data signals and complete
the operation in background without further input stimulus
requirement. Once the internally controlled Erase or Pro-
gram cycle in the flash bank has commenced, the SRAM
bank can be accessed for Read or Write.
The SST32HFx1/x1C devices consist of two independent
memory banks with respective bank enable signals. The
Flash and SRAM memory banks are superimposed in the
same memory address space. Both memory banks share
common address lines, data lines, WE# and OE#. The
memory bank selection is done by memory bank enable
©2005 Silicon Storage Technology, Inc.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF+ and ComboMemory are trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
S71236-04-000
1
5/05
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
The SST32HFx1/x1C devices are suited for applications
that use both flash memory and (P)SRAM memory to store
code or data. For systems requiring low power and small
form factor, the SST32HFx1/x1C devices significantly
improve performance and reliability while lowering power
consumption when compared with multiple chip solutions.
The SST32HFx1/x1C inherently use less energy during
Erase and Program operations than alternative flash tech-
nologies. The total energy consumed is a function of the
applied voltage, current, and time of application. Since, for
any given voltage range, SuperFlash technology uses less
current to program and has a shorter erase time, the total
energy consumed during any Erase or Program operation
is less than alternative flash technologies.
Concurrent Read/Write Operation
The SST32HFx1/x1C provide the unique benefit of being
able to read from or write to SRAM, while simultaneously
erasing or programming the flash. This allows data alter-
ation code to be executed from SRAM, while altering the
data in flash. See Figure 26 for a flowchart. The following
table lists all valid states.
CONCURRENT READ/WRITE STATE TABLE
Flash
Program/Erase
Program/Erase
SRAM
Read
Write
The device will ignore all SDP commands when an Erase
or Program operation is in progress. Note that Product
Identification commands use SDP; therefore, these com-
mands will also be ignored while an Erase or Program
operation is in progress.
SuperFlash technology provides fixed Erase and Program
times independent of the number of Erase/Program cycles
that have occurred. Therefore the system software or hard-
ware does not have to be modified or de-rated as is neces-
sary with alternative flash technologies, whose Erase and
Program times increase with accumulated Erase/Program
cycles.
Flash Read Operation
The Read operation of the SST32HFx1/x1C devices is
controlled by BEF# and OE#. Both have to be low, with
WE# high, for the system to obtain data from the outputs.
BEF# is used for flash memory bank selection. When
BEF# is high, the chip is deselected and only standby
power is consumed. OE# is the output control and is used
to gate data from the output pins. The data bus is in high
impedance state when OE# is high. Refer to Figure 6 for
further details.
Device Operation
The SST32HFx1/x1C use BES1#, BES2 and BEF# to con-
trol operation of either the flash or the SRAM memory
bank. When BEF# is low, the flash bank is activated for
Read, Program or Erase operation. When BES1# is low,
and BES2 is high the SRAM is activated for Read and
Write operation. BEF# and BES1# cannot be at low level,
and BES2 cannot be at high level at the same time. If all
bank enable signals are asserted, bus contention will
result and the device may suffer permanent damage.
All address, data, and control lines are shared by flash and
SRAM memory banks which minimizes power consump-
tion and loading. The device goes into standby when BEF#
and BES1# bank enables are raised to VIHC (Logic High) or
when BEF# is high and BES2 is low.
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
2
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
Flash Word-Program Operation
Erase-Suspend/Erase-Resume Commands
The flash memory bank of the SST32HFx1/x1C devices is
programmed on a word-by-word basis. Before Program
operations, the memory must be erased first. The Program
operation consists of three steps. The first step is the three-
byte load sequence for Software Data Protection. The sec-
ond step is to load word address and word data. During the
Word-Program operation, the addresses are latched on the
falling edge of either BEF# or WE#, whichever occurs last.
The data is latched on the rising edge of either BEF# or
WE#, whichever occurs last. The third step is the internal
Program operation which is initiated after the rising edge of
the fourth WE# or BEF#, whichever occurs first. The Pro-
gram operation, once initiated, will be completed, within 10
µs. See Figures 7 and 8 for WE# and BEF# controlled Pro-
gram operation timing diagrams and Figure 21 for flow-
charts. During the Program operation, the only valid flash
Read operations are Data# Polling and Toggle Bit. During
the internal Program operation, the host is free to perform
additional tasks. During the command sequence, WP#
should be statically held high or low. Any SDP commands
loaded during the internal Program operation will be
ignored.
The Erase-Suspend operation temporarily suspends a
Sector- or Block-Erase operation thus allowing data to be
read from any memory location, or program data into any
sector/block that is not suspended for an Erase operation.
The operation is executed by issuing one byte command
sequence with Erase-Suspend command (B0H). The
device automatically enters read mode typically within 20
µs after the Erase-Suspend command had been issued.
Valid data can be read from any sector or block that is not
suspended from an Erase operation. Reading at address
location within erase-suspended sectors/blocks will output
DQ2 toggling and DQ6 at “1”. While in Erase-Suspend
mode, a Word-Program operation is allowed except for the
sector or block selected for Erase-Suspend.
To resume Sector-Erase or Block-Erase operation which has
been suspended the system must issue Erase Resume
command. The operation is executed by issuing one byte
command sequence with Erase Resume command (30H)
at any address in the last Byte sequence.
Flash Chip-Erase Operation
The SST32HFx1/x1C provide a Chip-Erase operation,
which allows the user to erase the entire memory array to
the “1” state. This is useful when the entire device must be
quickly erased.
Flash Sector/Block-Erase Operation
The Flash Sector/Block-Erase operation allows the system
to erase the device on a sector-by-sector (or block-by-
block) basis. The SST32HFx1/x1C offer both Sector-Erase
and Block-Erase mode. The sector architecture is based
on uniform sector size of 2 KWord. The Block-Erase mode
is based on uniform block size of 32 KWord. The Sector-
Erase operation is initiated by executing a six-byte com-
mand sequence with Sector-Erase command (30H) and
sector address (SA) in the last bus cycle. The address lines
The Chip-Erase operation is initiated by executing a six-
byte command sequence with Chip-Erase command
(10H) at address 5555H in the last byte sequence. The
Erase operation begins with the rising edge of the sixth
WE# or BEF#, whichever occurs first. During the Erase
operation, the only valid read is Toggle Bit or Data# Polling.
See Table 5 for the command sequence, Figure 10 for tim-
ing diagram, and Figure 25 for the flowchart. Any com-
mands issued during the Chip-Erase operation are
ignored.
AMS-A11 are used to determine the sector address. The
Block-Erase operation is initiated by executing a six-byte
command sequence with Block-Erase command (50H)
and block address (BA) in the last bus cycle. The address
lines AMS-A15 are used to determine the block address.
The sector or block address is latched on the falling edge of
the sixth WE# pulse, while the command (30H or 50H) is
latched on the rising edge of the sixth WE# pulse. The
internal Erase operation begins after the sixth WE# pulse.
The End-of-Erase operation can be determined using
either Data# Polling or Toggle Bit methods. See Figures 12
and 13 for timing waveforms. Any commands issued during
the Sector- or Block-Erase operation are ignored, WP#
should be statically held high or low.
Write Operation Status Detection
The SST32HFx1/x1C provide two software means to
detect the completion of a write (Program or Erase) cycle,
in order to optimize the system Write cycle time. The soft-
ware detection includes two status bits: Data# Polling
(DQ7) and Toggle Bit (DQ6). The End-of-Write detection
mode is enabled after the rising edge of WE#, which ini-
tiates the internal Program or Erase operation.
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
3
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
The actual completion of the nonvolatile write is asynchro-
nous with the system; therefore, either a Data# Polling or
Toggle Bit read may be simultaneous with the completion
of the Write cycle. If this occurs, the system may possibly
get an erroneous result, i.e., valid data may appear to con-
flict with either DQ7 or DQ6. In order to prevent spurious
rejection, if an erroneous result occurs, the software routine
should include a loop to read the accessed location an
additional two (2) times. If both reads are valid, then the
device has completed the Write cycle, otherwise the rejec-
tion is valid.
TABLE 1: WRITE OPERATION STATUS
Status
DQ7 DQ6
DQ2
Normal
Standard
DQ7# Toggle No Toggle
Operation Program
Standard
Erase
0
1
Toggle
1
Toggle
Toggle
Erase-
Read from
Suspend Erase-Suspended
Mode
Sector/Block
Read from
Data
Data
Data
Non- Erase-Suspended
Sector/Block
Program
DQ7# Toggle
N/A
Flash Data# Polling (DQ7)
T1.0 1236
Note: DQ7 and DQ2 require a valid address when reading
When the SST32HFx1/x1C flash memory banks are in the
internal Program operation, any attempt to read DQ7 will
produce the complement of the true data. Once the Pro-
gram operation is completed, DQ7 will produce true data.
Note that even though DQ7 may have valid data immedi-
ately following the completion of an internal Write opera-
tion, the remaining data outputs may still be invalid: valid
data on the entire data bus will appear in subsequent suc-
cessive Read cycles after an interval of 1 µs. During inter-
nal Erase operation, any attempt to read DQ7 will produce
a ‘0’. Once the internal Erase operation is completed, DQ7
will produce a ‘1’. The Data# Polling is valid after the rising
edge of the fourth WE# (or BEF#) pulse for Program opera-
tion. For Sector- or Block-Erase, the Data# Polling is valid
after the rising edge of the sixth WE# (or BEF#) pulse. See
Figure 9 for Data# Polling timing diagram and Figure 22 for
a flowchart.
status information.
Flash Memory Data Protection
The SST32HFx1/x1C flash memory bank provides both
hardware and software features to protect nonvolatile data
from inadvertent writes.
Flash Hardware Data Protection
Noise/Glitch Protection: A WE# or BEF# pulse of less than
5 ns will not initiate a Write cycle.
VDD Power Up/Down Detection: The Write operation is
inhibited when VDD is less than 1.5V.
Write Inhibit Mode: Forcing OE# low, BEF# high, or WE#
high will inhibit the flash Write operation. This prevents
inadvertent writes during power-up or power-down.
Toggle Bits (DQ6 and DQ2)
During the internal Program or Erase operation, any con-
secutive attempts to read DQ6 will produce alternating “1”s
and “0”s, i.e., toggling between 1 and 0. When the internal
Program or Erase operation is completed, the DQ6 bit will
stop toggling. The device is then ready for the next opera-
tion. For Sector-, Block-, or Chip-Erase, the toggle bit (DQ6)
is valid after the rising edge of sixth WE# (or BEF#) pulse.
DQ6 will be set to “1” if a Read operation is attempted on an
Erase-Suspended Sector/Block. If Program operation is ini-
tiated in a sector/block not selected in Erase-Suspend
mode, DQ6 will toggle.
An additional Toggle Bit is available on DQ2, which can be
used in conjunction with DQ6 to check whether a particular
sector is being actively erased or erase-suspended. Table 1
shows detailed status bits information. The Toggle Bit
(DQ2) is valid after the rising edge of the last WE# (or
BEF#) pulse of Write operation. See Figure 10 for Toggle
Bit timing diagram and Figure 22 for a flowchart.
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
4
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
Hardware Block Protection
SRAM Read
The SST32HFx1/x1C support bottom hardware block
protection, which protects the bottom 32 KWord block of
the device. The Boot Block address is 000000H-007FFFH.
Program and Erase operations are prevented on the 32
KWord when WP# is low. If WP# is left floating, it is inter-
nally held high via a pull-up resistor, and the Boot Block is
unprotected, enabling Program and Erase operations on
that block.
The SRAM Read operation of the SST32HFx1/x1C is con-
trolled by OE# and BES1#, both have to be low with WE#
and BES2 high for the system to obtain data from the out-
puts. BES1# and BES2 are used for SRAM bank selection.
OE# is the output control and is used to gate data from the
output pins. The data bus is in high impedance state when
OE# is high. Refer to the Read cycle timing diagram, Fig-
ure 3, for further details.
Hardware Reset (RST#)
SRAM Write
The RST# pin provides a hardware method of resetting the
device to read array data. When the RST# pin is held low
for at least TRP, any in-progress operation will terminate and
return to Read mode. When no internal Program/Erase
operation is in progress, a minimum period of TRHR is
required after RST# is driven high before a valid Read can
take place (see Figure 17).
The SRAM Write operation of the SST32HFx1/x1C is con-
trolled by WE# and BES1#, both have to be low, BES2
must be high for the system to write to the SRAM. During
the Word-Write operation, the addresses and data are ref-
erenced to the rising edge of either BES1#, WE#, or the
falling edge of BES2 whichever occurs first. The write time
is measured from the last falling edge of BES#1 or WE# or
the rising edge of BES2 to the first rising edge of BES1#, or
WE# or the falling edge of BES2. Refer to the Write cycle
timing diagrams, Figures 4 and 5, for further details.
The Erase or Program operation that has been interrupted
needs to be reinitiated after the device resumes normal
operation mode to ensure data integrity.
Product Identification
Flash Software Data Protection (SDP)
The Product Identification mode identifies the devices as
the SST32HFx1/x1C and manufacturer as SST. This
mode may be accessed by software operations only.
The hardware device ID Read operation, which is typi-
cally used by programmers, cannot be used on this
device because of the shared lines between flash and
SRAM in the multi-chip package. Therefore, applica-
tion of high voltage to pin A9 may damage this device.
Users may use the software Product Identification opera-
tion to identify the part (i.e., using the device ID) when using
multiple manufacturers in the same socket. For details, see
Tables 4 and 5 for software operation, Figure 14 for the
software ID entry and read timing diagram and Figure 23
for the ID entry command sequence flowchart.
The SST32HFx1/x1C provide the JEDEC approved soft-
ware data protection scheme for all flash memory bank
data alteration operations, i.e., Program and Erase. Any
Program operation requires the inclusion of a series of
three-byte sequence. The three byte-load sequence is
used to initiate the Program operation, providing optimal
protection from inadvertent Write operations, e.g., during
the system power-up or power-down. Any Erase operation
requires the inclusion of six-byte load sequence. The
SST32HFx1/x1C devices are shipped with the software
data protection permanently enabled. See Table 5 for the
specific software command codes. During SDP command
sequence, invalid commands will abort the device to Read
mode, within TRC. The contents of DQ15-DQ8 can be VIL or
VIH, but no other value, during any SDP command
sequence.
TABLE 2: PRODUCT IDENTIFICATION
Address
Data
Manufacturer’s ID
Device ID
0000H
BFH
SST32HF16x1x
SST32HF32x1x
0001H
0001H
234BH
235BH
T2.2 1236
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
5
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
To program the user segment of the Security ID, the user
Product Identification Mode Exit/Reset
must use the Security ID Word-Program command. To
detect end-of-write for the SEC ID, read the toggle bits. Do
not use Data# Polling. Once this is complete, the Sec ID
should be locked using the User Sec ID Program Lock-Out.
This disables any future corruption of this space. Note that
regardless of whether or not the Sec ID is locked, neither
Sec ID segment can be erased.
In order to return to the standard read mode, the Software
Product Identification mode must be exited. Exiting is
accomplished by issuing the Exit ID command sequence,
which returns the device to the Read operation. Please
note that the software reset command is ignored during an
internal Program or Erase operation. This command may
also be used to reset the device to Read mode after any
inadvertent transient condition that apparently causes the
device to behave abnormally, e.g. not read correctly. See
Table 5 for software command codes, Figure 15 for timing
waveform and Figure 23 for a flowchart.
The Secure ID space can be queried by executing a three-
byte command sequence with Enter Sec ID command
(88H) at address 5555H in the last byte sequence. To exit
this mode, the Exit Sec ID command should be executed.
Refer to Table 5 for more details.
Security ID
Design Considerations
The SST32HFx1/x1C devices offer a 256-bit Security ID
space. The Secure ID space is divided into two 128-bit seg-
ments - one factory programmed segment and one user
programmed segment. The first segment is programmed
and locked at SST with a random 128-bit number. The user
segment is left un-programmed for the customer to pro-
gram as desired.
SST recommends a high frequency 0.1 µF ceramic capac-
itor to be placed as close as possible between VDD and
VSS, e.g., less than 1 cm away from the VDD pin of the
device. Additionally, a low frequency 4.7 µF electrolytic
capacitor from VDD to VSS should be placed within 1 cm of
the VDD pin.
FUNCTIONAL BLOCK DIAGRAM
SRAM/
PSRAM
Address Buffers
UBS#
LBS#
BES1#
BES2
Control Logic
BEF#
OE1#
WE1#
DQ - DQ
15
A
-A
0
8
MS
I/O Buffers
DQ - DQ
7
0
WP#
RESET#
Address Buffers
& Latches
SuperFlash
Memory
1236 B1.5
Notes: 1. For LS package only: WE# = WEF# and/or WES#
OE# = OEF# and/or OES#
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
6
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
TOP VIEW (balls facing down)
SST32HF16x1x/32x1x
8
NC
A20 A11 A15 A14 A13 A12
V
SSF
NC
NC
7
6
5
4
3
2
1
A16
WEF# NC
RST#
A8
A10
A9 DQ15 WES# DQ14 DQ7
DQ13 DQ6 DQ4 DQ5
V
DQ12 BES2 V
V
DDS DDF
SSS
WP# NC
A19 DQ11
DQ10 DQ2 DQ3
LBS# UBS# OES#
DQ9 DQ8 DQ0 DQ1
A18 A17
NC A5
A7
A4
A6
A3
A2
A1 BES1#
OEF# NC NC
NC
A0 BEF#
V
SSF
A B C D E F G H J K
FIGURE 1: PIN ASSIGNMENTS FOR 62-BALL LFBGA (8MM X 10MM)
TOP VIEW (balls facing down)
8
NC
NC
A15 A21
A11 A12 A13 A14
A8 A19 A9 A10 DQ6 DQ13 DQ12 DQ5
NC
A16
NC
V
NC
SS
7
6
5
4
3
2
1
NC DQ15 DQ7 DQ14 NC
WE# BES2 A20
WP# RST# NC
DQ4
DQ3
V
V
NC
DDS
DQ11
DDF
LBS# UBS# A18 A17 DQ1 DQ9 DQ10 DQ2
A7
A6
A3
A5
A2
A4
A1
V
OE# DQ0 DQ8 NC
SS
NC
A0 BEF# BES1# NC
A B C D E F G H J K
FIGURE 2: PIN ASSIGNMENTS FOR 63-BALL LFBGA (8MM X 10MM)
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
7
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
TABLE 3: PIN DESCRIPTION
Symbol
Pin Name
Functions
AMS1 to A0 Address Inputs
To provide flash address, AMS-A0.
To provide SRAM address, AMS-A0
DQ15-DQ0 Data Inputs/Outputs
To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a flash Erase/Program cycle. The outputs are in
tri-state when OE# is high or BES1# is high or BES2 is low and BEF# is high.
BEF#
BES1#
BES2
OEF#2
OES#2
WEF#2
WES#2
OE#
Flash Memory Bank Enable To activate the Flash memory bank when BEF# is low
SRAM Memory Bank Enable To activate the SRAM memory bank when BES1# is low
SRAM Memory Bank Enable To activate the SRAM memory bank when BES2 is high
Output Enable
Output Enable
Write Enable
Write Enable
Output Enable
Write Enable
To gate the data output buffers for Flash2 only
To gate the data output buffers for SRAM2 only
To control the Write operations for Flash2 only
To control the Write operations for SRAM2 only
To gate the data output buffers
WE#
To control the Write operations
UBS#
LBS#
WP#
Upper Byte Control (SRAM) To enable DQ15-DQ8
Lower Byte Control (SRAM) To enable DQ7-DQ0
Write Protect
Reset
To protect and unprotect sectors from Erase or Program operation
RST#
To Reset and return the device to Read mode
2
VSSF
Ground
Flash2 only
SRAM2 only
2
VSSS
Ground
VSS
Ground
VDDF
VDDS
NC
Power Supply (Flash)
Power Supply (SRAM)
No Connection
2.7-3.3V Power Supply to Flash only
2.7-3.3V Power Supply to SRAM only
Unconnected pins
T3.3 1236
1. AMS = Most Significant Address
AMS = A19 for SST32HF16x1x and A20 for SST32HF32x1x
2. LS package only
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
8
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
1
TABLE 4: OPERATIONAL MODES SELECTION
Mode
BEF#
BES1#
VIH
X
BES22
X
OE#3
X
WE#3
X
LBS#
X
UBS#
DQ0-7
DQ8-15
Full Standby
VIH
X
X
HIGH-Z
HIGH-Z
VIL
VIH
VIH
X
X
X
X
Output Disable
VIH
VIL
VIL
VIL
VIL
VIH
VIL
VIL
VIH
X
VIH
X
VIH
X
X
X
HIGH-Z
HIGH-Z
DOUT
DIN
HIGH-Z
HIGH-Z
DOUT
DIN
VIH
X
VIH
X
VIH
VIH
VIL
X
Flash Read
Flash Write
Flash Erase
SRAM Read
VIH
X
VIL
VIH
VIH
VIL
VIH
VIL
VIL
VIH
X
X
X
X
X
X
VIL
X
VIH
X
VIL
X
VIH
X
X
X
VIL
VIH
VIL
VIL
VIH
VIL
VIL
VIH
VIL
X
VIL
VIL
VIH
VIL
VIL
VIH
X
DOUT
HIGH-Z
DOUT
DIN
DOUT
DOUT
HIGH-Z
DIN
SRAM Write
VIH
VIL
VIH
X
VIL
HIGH-Z
DIN
DIN
HIGH-Z
Product
Identification4
VIL
VIH
X
X
VIL
VIH
Manufacturer’s ID5
Device ID5
VIL
T4.2 1236
1. X can be VIL or VIH, but no other value.
2. Do not apply BEF# = VIL, BES1# = VIL and BES2 = VIH at the same time
3. OE# = OEF# and OES#
WE# = WEF# and WES# for LS package only
4. Software mode only
5. With AMS-A1 = 0;SST Manufacturer’s ID = 00BFH, is read with A0=0,
SST32HF16x1x Device ID = 234BH, is read with A0=1,
SST32HF32x1x Device ID = 235BH, is read with A0=1.
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
9
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
TABLE 5: SOFTWARE COMMAND SEQUENCE
Command
Sequence
1st Bus
Write Cycle
2nd Bus
Write Cycle
3rd Bus
Write Cycle
4th Bus
Write Cycle
5th Bus
Write Cycle
6th Bus
Write Cycle
Addr1 Data2 Addr1 Data2 Addr1 Data2 Addr1 Data2 Addr1 Data2 Addr1 Data2
WA3
Data
Word-Program
Sector-Erase
Block-Erase
5555H
5555H
5555H
5555H
AAH 2AAAH 55H 5555H A0H
4
4
AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H
AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H
SAX
BAX
30H
50H
Chip-Erase
AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 10H
Erase-Suspend
Erase-Resume
Query Sec ID5
XXXXH B0H
XXXXH 30H
5555H
5555H
AAH 2AAAH 55H 5555H 88H
AAH 2AAAH 55H 5555H A5H
WA6
Data
User Security ID
Word-Program
XXH6 0000H
User Security ID
Program Lock-Out
5555H
AAH 2AAAH 55H 5555H 85H
Software ID Entry7,8
5555H
5555H
AAH 2AAAH 55H 5555H 90H
AAH 2AAAH 55H 5555H F0H
Software ID Exit9,10
/Sec ID Exit
Software ID Exit9,10
/Sec ID Exit
XXH
F0H
T5.2 1236
1. Address format A14-A0 (Hex).
Addresses A15-A19 can be VIL or VIH, but no other value, for Command sequence for SST32HF16x1x,
Addresses A15-A20 can be VIL or VIH, but no other value, for Command sequence for SST32HF32x1x.
2. DQ15-DQ8 can be VIL or VIH, but no other value, for Command sequence
3. WA = Program Word address
4. SAX for Sector-Erase; uses AMS-A11 address lines
BAX, for Block-Erase; uses AMS-A15 address lines
A
A
MS = Most significant address
MS = A19 for SST32HF16x1x and A20 for SST32HF32x1x.
5. With AMS-A4 = 0; Sec ID is read with A3-A0,
SST ID is read with A3 = 0 (Address range = 000000H to 000007H),
User ID is read with A3 = 1 (Address range = 000010H to 000017H).
Lock Status is read with A7-A0 = 0000FFH. Unlocked: DQ3 = 1 / Locked: DQ3 = 0.
6. Valid Word-Addresses for Sec ID are from 000000H-000007H and 000010H-000017H.
7. The device does not remain in Software Product ID Mode if powered down.
8. With AMS-A1 =0; SST Manufacturer ID = 00BFH, is read with A0 = 0,
SST32HF16x1x Device ID = 234BH, is read with A0 = 1,
SST32HF32x1x Device ID = 235BH, is read with A0 = 1,
A
MS = Most significant address
AMS = A19 for SST32HF16x1x and A20 for SST32HF32x1x.
9. Both Software ID Exit operations are equivalent
10. If users never lock after programming, Sec ID can be programmed over the previously unprogrammed bits (data=1) using the Sec ID
mode again (the programmed “0” bits cannot be reversed to “1”). Valid Word-Addresses for Sec ID are from 000000H-000007H and
000010H-000017H.
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
10
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20°C to +85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to VDD1+0.3V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to VDD1+1.0V
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Solder Reflow Temperature2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. VDD = VDDF and VDDS
2. Excluding certain with-Pb 32-PLCC units, all packages are 260°C capable in both non-Pb and with-Pb solder versions.
Certain with-Pb 32-PLCC package types are capable of 240°C for 10 seconds; please consult the factory for the latest information.
3. Outputs shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE
Range
Ambient Temp
0°C to +70°C
VDD
Commercial
Extended
2.7-3.3V
2.7-3.3V
-20°C to +85°C
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . CL = 30 pF
See Figures 19 and 20
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
11
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
TABLE 6: DC OPERATING CHARACTERISTICS (VDD = VDDF AND VDDS = 2.7-3.3V)
Limits
Symbol Parameter
IDD Active VDD Current
Min
Max Units Test Conditions
Address input = VILT/VIHT, at f=5 MHz,
VDD=VDD Max, all DQs open
Read
Flash
OE#=VIL, WE#=VIH
18
30
40
mA
mA
mA
BEF#=VIL, BES1#=VIH, or BES2=VIL
BEF#=VIH, BES1#=VIL , BES2=VIH
BEF#=VIH, BES1#=VIL , BES2=VIH
WE#=VIL
SRAM
Concurrent Operation
Write1
Flash
35
30
mA
mA
BEF#=VIL, BES1#=VIH, or BES2=VIL, OE#=VIH
BEF#=VIH, BES1#=VIL , BES2=VIH
VDD = VDD Max, BEF#=BES1#=VIHC, BES2=VILC
SRAM
ISB
Standby VDD Current SST32HFx1
SST32HFx1C
110
30
µA
µA
IRT
Reset VDD Current
30
1
µA
µA
µA
V
Reset=VSS±0.3V
ILI
Input Leakage Current
Output Leakage Current
Input Low Voltage
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
ILO
10
0.8
0.3
VIL
VILC
VIH
Input Low Voltage (CMOS)
Input High Voltage
V
VDD=VDD Max
0.7 VDD
VDD-0.3
V
VDD=VDD Max
VIHC
VOLF
VOHF
VOLS
VOHS
Input High Voltage (CMOS)
Flash Output Low Voltage
Flash Output High Voltage
SRAM Output Low Voltage
SRAM Output High Voltage
V
VDD=VDD Max
0.2
0.4
V
IOL=100 µA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
IOL =1 mA, VDD=VDD Min
VDD-0.2
2.2
V
V
V
IOH =-500 µA, VDD=VDD Min
T6.1 1236
1. IDD active while Erase or Program is in progress.
TABLE 7: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
100
Units
µs
1
TPU-READ
Power-up to Read Operation
Power-up to Program/Erase Operation
1
TPU-WRITE
100
µs
T7.0 1236
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 8: CAPACITANCE (TA = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
VI/O = 0V
Maximum
1
CI/O
I/O Pin Capacitance
Input Capacitance
12 pF
12 pF
1
CIN
VIN = 0V
T8.0 1236
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 9: FLASH RELIABILITY CHARACTERISTICS
Symbol
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
Units
Test Method
1
NEND
10,000
100
Cycles JEDEC Standard A117
1
TDR
Years
mA
JEDEC Standard A103
JEDEC Standard 78
1
ILTH
100 + IDD
T9.0 1236
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
12
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
AC CHARACTERISTICS
TABLE 10: SRAM READ CYCLE TIMING PARAMETERS
Symbol Parameter
Min
Max
Units
ns
TRCS
TAAS
TBES
TOES
TBYES
Read Cycle Time
70
Address Access Time
70
70
35
70
ns
Bank Enable Access Time
Output Enable Access Time
UBS#, LBS# Access Time
BES# to Active Output
ns
ns
ns
1
TBLZS
TOLZS
0
0
0
ns
1
Output Enable to Active Output
UBS#, LBS# to Active Output
BES# to High-Z Output
ns
1
TBYLZS
ns
1
TBHZS
25
25
35
ns
1
TOHZS
TBYHZS
TOHS
Output Disable to High-Z Output
UBS#, LBS# to High-Z Output
Output Hold from Address Change
0
ns
1
ns
10
ns
T10.1 1236
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: SRAM WRITE CYCLE TIMING PARAMETERS
Symbol Parameter
Min
70
60
60
0
Max
Units
ns
TWCS
TBWS
TAWS
Write Cycle Time
Bank Enable to End-of-Write
Address Valid to End-of-Write
Address Set-up Time
ns
ns
TASTS
TWPS
TWRS
TBYWS
TODWS
TOEWS
TDSS
ns
Write Pulse Width
60
0
ns
Write Recovery Time
ns
UBS#, LBS# to End-of-Write
Output Disable from WE# Low
Output Enable from WE# High
Data Set-up Time
60
ns
30
ns
0
30
0
ns
ns
TDHS
Data Hold from Write Time
ns
T11.1 1236
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
13
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
TABLE 12: FLASH READ CYCLE TIMING PARAMETERS VDD = 2.7-3.6V
Symbol
TRC
Parameter
Min
Max
Units
ns
Read Cycle Time
70
TCE
Chip Enable Access Time
Address Access Time
70
70
35
ns
TAA
ns
TOE
Output Enable Access Time
BEF# Low to Active Output
OE# Low to Active Output
BEF# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
RST# Pulse Width
ns
1
TCLZ
0
0
ns
1
TOLZ
ns
1
TCHZ
20
20
ns
1
TOHZ
ns
1
TOH
0
ns
1
TRP
500
50
ns
1
TRHR
RST# High before Read
RST# Pin Low to Read Mode
ns
1,2
TRY
20
µs
T12.1 1236
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. This parameter applies to Sector-Erase, Block-Erase and Program operations.
This parameter does not apply to Chip-Erase operations.
TABLE 13: FLASH PROGRAM/ERASE CYCLE TIMING PARAMETERS
Symbol Parameter
Min
Max
Units
µs
TBP
Word-Program Time
10
TAS
Address Setup Time
Address Hold Time
WE# and BEF# Setup Time
WE# and BEF# Hold Time
OE# High Setup Time
OE# High Hold Time
BEF# Pulse Width
WE# Pulse Width
0
30
0
ns
TAH
ns
TCS
ns
TCH
TOES
TOEH
TCP
0
ns
0
ns
10
40
40
30
30
30
0
ns
ns
TWP
TWPH
ns
1
WE# Pulse Width High
BEF# Pulse Width High
Data Setup Time
ns
1
TCPH
TDS
ns
ns
1
TDH
Data Hold Time
ns
1
TIDA
Software ID Access and Exit Time
Sector-Erase
150
25
ns
TSE
ms
ms
TBE
Block-Erase
25
TSCE
Chip-Erase
50
ms
T13.2 1236
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
14
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
T
RCS
ADDRESSES A
MSS-0
T
T
OHS
AAS
T
BES1#
BES2
BES
T
BES
T
T
BLZS
BHZS
T
OES
OE#
T
OLZS
T
OHZS
T
BYES
UBS#, LBS#
T
BYLZS
T
BYHZS
DQ
15-0
DATA VALID
1236 F03.1
Note: AMSS = Most Significant SRAM Address
MSS = A16 for SST32HF1621C, A17 for SST32HFxx41x and A18 for SST32HFxx81
A
FIGURE 3: SRAM READ CYCLE TIMING DIAGRAM
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
15
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
T
WCS
3
ADDRESSES A
MSS -0
T
ASTS
T
T
WPS
WRS
WE#
T
AWS
T
BWS
BES1#
BES2
T
BWS
T
BYWS
UBS#, LBS#
T
OEWS
T
ODWS
T
DHS
T
DSS
NOTE 2
VALID DATA IN
NOTE 2
DQ
DQ
7-0
15-8,
1236 F04.1
Note: 1. If OE# is High during the Write cycle, the outputs will remain at high impedance.
2. If BES1# goes Low or BES2 goes high coincident with or after WE# goes Low, the output will remain at high impedance.
If BES1# goes High or BES2 goes low coincident with or before WE# goes High, the output will remain at high impedance.
Because DIN signals may be in the output state at this time, input signals of reverse polarity must not be applied.
3. AMSS = Most Significant SRAM Address
AMSS = A16 for SST32HF1621C, A17 for SST32HFxx41x and A18 for SST32HFxx81
FIGURE 4: SRAM WRITE CYCLE TIMING DIAGRAM (WE# CONTROLLED)1
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
16
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
T
WCS
3
ADDRESSES A
MSS -0
T
T
WRS
WPS
WE#
T
BWS
BES1#
BES2
T
BWS
T
AWS
T
T
BYWS
ASTS
UBS#, LBS#
T
T
DHS
DSS
DQ
DQ
7-0
15-8,
NOTE 2
NOTE 2
VALID DATA IN
1236 F05.1
Note: 1. If OE# is High during the Write cycle, the outputs will remain at high impedance.
2. Because DIN signals may be in the output state at this time, input signals of reverse polarity must not be applied.
3. AMSS = Most Significant SRAM Address
A
MSS = A16 for SST32HF1621C, A17 for SST32HFxx41x and A18 for SST32HFxx81
FIGURE 5: SRAM WRITE CYCLE TIMING DIAGRAM (UBS#, LBS# CONTROLLED)1
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
17
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
T
T
AA
RC
ADDRESS A
MS-0
BEF#
OE#
T
CE
T
OE
T
T
OHZ
V
OLZ
IH
WE#
T
CHZ
T
OH
T
HIGH-Z
CLZ
HIGH-Z
DQ
15-0
DATA VALID
DATA VALID
1236 F06.2
Note: AMSF = Most Significant Flash Address
MSF = A19 for SST32HF16x1x and A20 for SST32HF32x1x
A
FIGURE 6: FLASH READ CYCLE TIMING DIAGRAM
INTERNAL PROGRAM OPERATION STARTS
T
BP
5555
2AAA
5555
ADDR
ADDRESS A
MS-0
T
AH
T
DH
T
WP
WE#
T
T
AS
DS
T
WPH
OE#
T
CH
BEF#
T
CS
DQ
15-0
XXAA
SW0
XX55
SW1
XXA0
SW2
DATA
WORD
(ADDR/DATA)
1236 F07.2
Note: AMSF = Most Significant Flash Address
MSF = A19 for SST32HF16x1x and A20 for SST32HF32x1x
A
WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence
X can be VIL or VIH, but no other value
FIGURE 7: FLASH WE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
18
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
INTERNAL PROGRAM OPERATION STARTS
T
BP
5555
2AAA
5555
ADDR
ADDRESS A
MS-0
T
AH
T
DH
T
CP
BEF#
T
T
AS
DS
T
CPH
OE#
WE#
T
CH
T
CS
DQ
15-0
XXAA
SW0
XX55
SW1
XXA0
SW2
DATA
WORD
(ADDR/DATA)
1236 F08.2
Note: AMSF = Most Significant Flash Address
MSF = A19 for SST32HF16x1x and A20 for SST32HF32x1x
A
WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence
X can be VIL or VIH, but no other value
FIGURE 8: BEF# CONTROLLED FLASH PROGRAM CYCLE TIMING DIAGRAM
ADDRESSES A
MSF-0
BEF#
OE#
T
CE
T
OES
T
OEH
T
OE
WE#
Data
Data#
Data#
Data
DQ
7
1236 F09.1
Note: AMSF = Most Significant Flash Address
AMSF = A19 for SST32HF16x1x and A20 for SST32HF32x1x
FIGURE 9: FLASH DATA# POLLING TIMING DIAGRAM
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
19
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
ADDRESSES A
MSF-0
T
CE
BEF#
T
OES
T
T
OE
OEH
OE#
WE#
DQ and DQ
6
2
TWO READ CYCLES
WITH SAME OUTPUTS
1236 F10.1
Note: AMSF = Most Significant Flash Address
MSF = A19 for SST32HF16x1x and A20 for SST32HF32x1x
A
FIGURE 10: FLASH TOGGLE BIT TIMING DIAGRAM
T
SCE
SIX-BYTE CODE FOR CHIP-ERASE
5555 5555 2AAA
5555
2AAA
5555
ADDRESS A
MS-0
BEF#
OE#
T
WP
WE#
DQ
15-0
XXAA
SW0
XX55
SW1
XX80
SW2
XXAA
SW3
XX55
SW4
XX10
SW5
1236 F11.2
Note: AMSF = Most Significant Flash Address
MSF = A19 for SST32HF16x1x and A20 for SST32HF32x1x
A
WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence
This device also supports BEF# controlled Chip-Erase operation.
The WE# and BEF# signals are interchangeable as long as minimum timings are meet. (See Table 13)
X can be VIL or VIH, but no other value.
FIGURE 11: WE# CONTROLLED FLASH CHIP-ERASE TIMING DIAGRAM
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
20
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
T
BE
SIX-BYTE CODE FOR BLOCK-ERASE
5555
2AAA
5555
5555
2AAA
BA
ADDRESS A
X
MS-0
BEF#
OE#
T
WP
WE#
DQ
15-0
XXAA
SW0
XX55
SW1
XX80
SW2
XXAA
SW3
XX55
SW4
XX50
SW5
1236 F13.2
Note: AMSF = Most Significant Flash Address
MSF = A19 for SST32HF16x1x and A20 for SST32HF32x1x
This device also supports BEF# controlled Block-Erase operation.
A
The WE# and BEF# signals are interchangeable as long as minimum timings are meet. (See Table 13.)
BAX = Block Address
WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence
X can be VIL or VIH, but no other value.
FIGURE 12: WE# CONTROLLED FLASH BLOCK-ERASE TIMING DIAGRAM
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
21
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
T
SE
SIX-BYTE CODE FOR SECTOR-ERASE
2AAA 5555 5555 2AAA
5555
SA
ADDRESS A
MS-0
X
BEF#
OE#
T
WP
WE#
DQ
XXAA
SW0
XX55
SW1
XX80
SW2
XXAA
SW3
XX55
SW4
XX30
SW5
15-0
1236 F12.2
Note: AMSF = Most Significant Flash Address
MSF = A19 for SST32HF16x1x and A20 for SST32HF32x1x
This device also supports BEF# controlled Sector-Erase operation.
A
The WE# and BEF# signals are interchangeable as long as minimum timings are meet. (See Table 13.)
SAX = Sector Address
WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence
X can be VIL or VIH, but no other value.
FIGURE 13: WE# CONTROLLED FLASH SECTOR-ERASE TIMING DIAGRAM
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
22
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
THREE-WORD SEQUENCE FOR
SOFTWARE ID ENTRY
ADDRESS A
14-0
5555
2AAA
5555
0000
0001
BEF#
OE#
T
IDA
T
WP
WE#
T
WPH
T
AA
DQ
15-0
XXAA
SW0
XX55
SW1
XX90
SW2
00BF
DEVICE ID
1236 F14.0
MFG ID
Note: X can be VIL or VIH, but no other value.
Device ID - See Table 2 on page 5
FIGURE 14: SOFTWARE ID ENTRY AND READ
THREE-WORD SEQUENCE FOR
SOFTWARE ID EXIT AND RESET
5555
2AAA
5555
ADDRESS A
DQ
14-0
XXAA
XX55
XXF0
15-0
T
IDA
BEF#
OE#
T
WP
WE#
T
WHP
1236 F15.0
SW0
SW1
SW2
Note: X can be VIL or VIH, but no other value.
FIGURE 15: SOFTWARE ID EXIT AND RESET
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
23
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
THREE-BYTE SEQUENCE FOR
SEC ID ENTRY
ADDRESS A
5555
2AAA
5555
MSF-0
BEF#
OE#
T
IDA
T
WP
WE#
T
WPH
T
AA
DQ
15-0
XXAA
SW0
XX55
SW1
XX88
SW2
1236 F27.1
Note: AMSF = Most Significant Flash Address
MSF = A19 for SST32HF16x1x and A20 for SST32HF32x1x
A
WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence.
X can be VIL or VIH, but no other value.
FIGURE 16: FLASH SEC ID ENTRY
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
24
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
T
RP
RST#
BEF#/OE#
T
1236 F23.2
RHR
FIGURE 17: RST# TIMING DIAGRAM (WHEN NO INTERNAL OPERATION IS IN PROGRESS)
T
RP
RST#
T
RY
BEF#/OE#
End-of-Write Detection
(Toggle-Bit)
1236 F24.2
FIGURE 18: RST# TIMING DIAGRAM (DURING PROGRAM OR ERASE OPERATION)
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
25
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
V
IHT
V
V
INPUT
REFERENCE POINTS
OUTPUT
OT
IT
V
ILT
1236 F16.0
AC test inputs are driven at VIHT (0.9 VDD) for a logic “1” and VILT (0.1 VDD) for a logic “0”. Measurement reference points
for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10% ↔ 90%) are <5 ns.
Note: VIT - VINPUT Test
V
V
V
OT - VOUTPUT Test
IHT - VINPUT HIGH Test
ILT - VINPUT LOW Test
FIGURE 19: AC INPUT/OUTPUT REFERENCE WAVEFORMS
TO TESTER
TO DUT
C
L
1236 F17.0
FIGURE 20: A TEST LOAD EXAMPLE
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
26
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
Start
Write data: XXAAH
Address: 5555H
Write data: XX55H
Address: 2AAAH
Write data: XXA0H
Address: 5555H
Write Word
Address/Word
Data
Wait for end of
Program (T
Data# Polling
,
BP
bit, or Toggle bit
operation)
Program
Completed
1236 F18.0
Note: X can be V or V , but no other value
IL
IH
FIGURE 21: WORD-PROGRAM ALGORITHM
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
27
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
Toggle Bit
Data# Polling
Internal Timer
Program/Erase
Initiated
Program/Erase
Initiated
Program/Erase
Initiated
Read DQ
7
Read word
Wait T
,
BP
T
T
SCE, or BE
No
Read same
word
Is DQ =
7
true data?
Program/Erase
Completed
Yes
No
Does DQ
match?
6
Program/Erase
Completed
Yes
Program/Erase
Completed
1236 F19.0
FIGURE 22: WAIT OPTIONS
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
28
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
Sec ID Query Entry
Command Sequence
Software Product ID Entry
Command Sequence
Load data: XXAAH
Address: 5555H
Load data: XXAAH
Address: 5555H
Load data: XX55H
Address: 2AAAH
Load data: XX55H
Address: 2AAAH
Load data: XX88H
Address: 5555H
Load data: XX90H
Address: 5555H
Wait T
Wait T
IDA
IDA
Read Sec ID
Read Software ID
1236 F20.1
X can be V or V , but no other value
IL IH
FIGURE 23: SEC ID/SOFTWARE ID COMMAND FLOWCHARTS
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
29
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
Software ID Exit/Sec ID Exit
Command Sequence
Load data: XXAAH
Address: 5555H
Load data: XXF0H
Address: XXH
Load data: XX55H
Address: 2AAAH
Wait T
IDA
Load data: XXF0H
Address: 5555H
Return to normal
operation
Wait T
IDA
Return to normal
operation
X can be V or V , but no other value
IL IH
1236 F25.0
FIGURE 24: SOFTWARE ID/SEC ID COMMAND FLOWCHARTS
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
30
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
Chip-Erase
Sector-Erase
Block-Erase
Command Sequence
Command Sequence
Command Sequence
Load data: XXAAH
Address: 5555H
Load data: XXAAH
Address: 5555H
Load data: XXAAH
Address: 5555H
Load data: XX55H
Address: 2AAAH
Load data: XX55H
Address: 2AAAH
Load data: XX55H
Address: 2AAAH
Load data: XX80H
Address: 5555H
Load data: XX80H
Address: 5555H
Load data: XX80H
Address: 5555H
Load data: XXAAH
Address: 5555H
Load data: XXAAH
Address: 5555H
Load data: XXAAH
Address: 5555H
Load data: XX55H
Address: 2AAAH
Load data: XX55H
Address: 2AAAH
Load data: XX55H
Address: 2AAAH
Load data: XX10H
Address: 5555H
Load data: XX30H
Load data: XX50H
Address: SA
Address: BA
X
X
Wait T
Wait T
Wait T
BE
SCE
SE
Chip erased
to FFFFH
Sector erased
to FFFFH
Block erased
to FFFFH
1236 F21.0
Note: X can be V or V , but no other value.
IL
IH
FIGURE 25: ERASE COMMAND SEQUENCE
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
31
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
Concurrent
Operation
Load SDP
Command
Sequence
Flash
Program/Erase
Initiated
Wait for End of
Write Indication
Read or Write
SRAM
End
Wait
Flash Operation
Completed
End Concurrent
Operation
1236 F22.0
FIGURE 26: CONCURRENT OPERATION FLOWCHART
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
32
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
PRODUCT ORDERING INFORMATION
Device
Speed
Suffix1
Suffix2
SST32HFxxxxC - XXX
-
XX
-
XXX X
Environmental Attribute
E1 = non-Pb
Package Modifier
FS = 63 ball positions
S = 62 ball positions
Package Type
L = LFBGA (8mm x 10mm x 1.4mm, 0.40mm ball size)
Temperature Range
C = Commercial = 0°C to +70°C
E = Extended = -20°C to +85°C
Minimum Endurance
4 = 10,000 cycles
Read Access Speed
70 = 70 ns
Device
Blank = PseudoSRAM
C = Standard SRAM
Hardware Block Protection
1 = Bottom Boot Block
SRAM Density
2 = 2 Mbit
4 = 4 Mbit
8 = 8 Mbit
Flash Density
16 = 16 Mbit
32 = 32 Mbit
Voltage
H = 2.7-3.3V
Product Series
32 = MPF+ + SRAM ComboMemory
1. Environmental suffix “E” denotes non-Pb solder.
SST non-Pb solder devices are “RoHS Compliant”.
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
33
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
Valid combinations for SST32HF1621C
SST32HF1621C-70-4C-LS
SST32HF1621C-70-4C-LSE
SST32HF1621C-70-4C-LFS
SST32HF1621C-70-4C-LFSE
SST32HF1621C-70-4E-LS
SST32HF1621C-70-4E-LSE
SST32HF1621C-70-4E-LFS
SST32HF1621C-70-4E-LFSE
Valid combinations for SST32HF1641
SST32HF1641-70-4C-LS
SST32HF1641-70-4C-LSE
SST32HF1641-70-4C-LFS
SST32HF1641-70-4C-LFSE
SST32HF1641-70-4E-LS
SST32HF1641-70-4E-LSE
SST32HF1641-70-4E-LFS
SST32HF1641-70-4E-LFSE
Valid combinations for SST32HF1641C
SST32HF1641C-70-4C-LS
SST32HF1641C-70-4C-LSE
SST32HF1641C-70-4C-LFS
SST32HF1641C-70-4C-LFSE
SST32HF1641C-70-4E-LS
SST32HF1641C-70-4E-LSE
SST32HF1641C-70-4E-LFS
SST32HF1641C-70-4E-LFSE
Valid combinations for SST32HF1681
SST32HF1681-70-4C-LS
SST32HF1681-70-4C-LSE
SST32HF1681-70-4C-LFS
SST32HF1681-70-4C-LFSE
SST32HF1681-70-4E-LS
SST32HF1681-70-4E-LSE
SST32HF1681-70-4E-LFS
SST32HF1681-70-4E-LFSE
Valid combinations for SST32HF3241
SST32HF3241-70-4C-LS
SST32HF3241-70-4C-LSE
SST32HF3241-70-4C-LFS
SST32HF3241-70-4C-LFSE
SST32HF3241-70-4E-LS
SST32HF3241-70-4E-LSE
SST32HF3241-70-4E-LFS
SST32HF3241-70-4E-LFSE
Valid combinations for SST32HF3241C
SST32HF3241C-70-4C-LS
SST32HF3241C-70-4C-LSE
SST32HF3241C-70-4C-LFS
SST32HF3241C-70-4C-LFSE
SST32HF3241C-70-4E-LS
SST32HF3241C-70-4E-LSE
SST32HF3241C-70-4E-LFS
SST32HF3241C-70-4E-LFSE
Valid combinations for SST32HF3281
SST32HF3281-70-4C-LS
SST32HF3281-70-4C-LSE
SST32HF3281-70-4C-LFS
SST32HF3281-70-4C-LFSE
SST32HF3281-70-4E-LS
SST32HF3281-70-4E-LSE
SST32HF3281-70-4E-LFS
SST32HF3281-70-4E-LFSE
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
34
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
PACKAGING DIAGRAMS
TOP VIEW
10.00 ± 0.20
BOTTOM VIEW
7.20
0.80
8
7
6
5
8
7
6
5
4
3
2
8.00 ± 0.20
4
5.60
3
2
1
1
0.40 ± 0.05
(62X)
0.80
A
B
C
D
E
F
G
H
J
K
K
J
H
G
F
E
D
C
B
A
A1 CORNER
A1 CORNER
1.30 ± 0.10
SIDE VIEW
1mm
0.12
SEATING PLANE
0.32 ± 0.05
Note: 1. Although many dimensions are similar to those of JEDEC Publication 95, MO-210, this specific package is not registered.
2. All linear dimensions are in millimeters.
3. Coplanarity: 0.12 mm
62-lfbga-LS-8x10-400mic-4
4. Ball opening size is 0.32 mm (± 0.05 mm)
62-BALL LOW-PROFILE, FINE-PITCH BALL GRID ARRAY (LFBGA) 8MM X 10MM
SST PACKAGE CODE: LS
TOP VIEW
10.0 ± 0.1
BOTTOM VIEW
7.20
0.80
8
7
6
5
4
3
2
1
8
7
6
5
4
3
2
8.0 ± 0.1
5.60
1
0.40 ± 0.05
(63X)
0.80
A
B
C
D
E
F
G
H
J
K
K J H G F E D C B A
A1 CORNER
A1 CORNER
1.3 ± 0.1
SIDE VIEW
1mm
0.12
SEATING PLANE
0.32 ± 0.05
Note:
1. Although many dimensions are similar to those of JEDEC Publication 95, MO-210, this specific package is not registered.
2. All linear dimensions are in millimeters.
3. Coplanarity: 0.12 mm
4. Ball opening size: 0.32 mm (± 0.05 mm)
63-lfbga-LFS-8x10-400mic-1
63-BALL LOW-PROFILE, FINE-PITCH BALL GRID ARRAY (LFBGA) 8MM X 10MM
SST PACKAGE CODE: LFS
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
35
Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
TABLE 14: REVISION HISTORY
Number
Description
Date
00
01
Jul 2003
Jan 2004
•
•
•
•
•
•
•
•
Initial Release
Moved 64M Flash + 16M SRAM to S71247 data sheet
Changed all TBD MPNs to L2S
Removed BFS MPNs for all devices
Updated all timing diagrams
02
03
Jun 2004
Mar 2005
Added SST32HF1621C device and associated MPNs
Removed SST32HF3281C and SST32HF6481C devices and associated MPNs
Changed IDD test condition for frequency specification from 1/TRC Min to 5 MHz
See Table 6 on page 12
•
•
Updated L2S package outline drawing and pin assignments
Added RoHS compliance information on page 1 and in the “Product Ordering Informa-
tion” on page 33
•
Added the solder reflow temperature to the “Absolute Maximum Stress Ratings” on
page 11.
•
•
•
•
Removed all 90 ns information and associated MPNs beginning on page 34
Added all non-Pb MPNs beginning on page 34
04
May 2005
Removed SST32HF6481 commercial temperature devices and MPNs
Moved SST32HF6481 extended temperature MPNs to S71299 data sheet
Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036
www.SuperFlash.com or www.sst.com
©2005 Silicon Storage Technology, Inc.
S71236-04-000
5/05
36
SST32HF1641C-70-4E-LSE 相关器件
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SST32HF1642-70-4C-LFS | SST | Multi-Purpose Flash Plus + SRAM ComboMemory | 获取价格 | |
SST32HF1642-70-4C-LFSE | SST | Multi-Purpose Flash Plus + SRAM ComboMemory | 获取价格 | |
SST32HF1642-70-4C-LFSE | SILICON | Memory Circuit, 1MX16, CMOS, PBGA63, 8 X 10 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, MO-210, LFBGA-63 | 获取价格 | |
SST32HF1642-70-4C-LS | SST | Multi-Purpose Flash Plus + SRAM ComboMemory | 获取价格 | |
SST32HF1642-70-4C-LSE | SST | Multi-Purpose Flash Plus + SRAM ComboMemory | 获取价格 | |
SST32HF1642-70-4E-LFS | SST | Multi-Purpose Flash Plus + SRAM ComboMemory | 获取价格 |
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