APM2518N [SINOPWER]
N-Channel Enhancement Mode MOSFET;
| 型号： | APM2518N |
| 厂家： | 
Sinopower Semiconductor Inc |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总10页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
APM2518NU
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
25V/50A,
D
RDS(ON)=8mΩ (Typ.) @ VGS=10V
RDS(ON)=15mΩ (Typ.) @ VGS=4.5V
S
G
•
•
•
•
100% UIS + Rg Tested
Reliable and Rugged
AvalancheRated
Top View of TO-252-2
D
Lead Free andGreenDevicesAvailable
(RoHSCompliant)
G
Applications
•
Power Management in Desktop Computer or
DC/DC Converters.
S
N-ChannelMOSFET
Ordering and Marking Information
Package Code
APM2518N
U : TO-252-2
Assembly Material
Handling Code
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
Temperature Range
Package Code
G : Halogen and Lead Free Device
XXXXX - Lot Code
APM2518N U :
APM2518N
XXXXX
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - December, 2016
APM2518NU
®
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
25
±20
150
-55 to 150
30
V
VGSS Gate-Source Voltage
TJ
Maximum Junction Temperature
°C
°C
A
TSTG Storage Temperature Range
IS
Diode Continuous Forward Current
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
120
80
IDP
300μs Pulse Drain Current Tested
A
A
50*
ID
Continuous Drain Current
35
50
PD
Maximum Power Dissipation
W
20
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Energy, L=0.1mH
2.5
°C/W
°C/W
mJ
RθJC
RθJA
EAS
50
33.8
Note *：Current limited by bond wire.
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
APM2518NU
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
25
-
-
-
1
V
µ
VGS=0V, IDS=250 A
VDS=20V, VGS=0V
-
IDSS Zero Gate Voltage Drain Current
µ
A
TJ=85°C
-
-
30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
1.3
1.8
-
2.5
±100
9.5
20
V
µ
VDS=VGS, IDS=250 A
VGS=±20V, VDS=0V
VGS=10V, IDS=30A
VGS=4.5V, IDS=15A
-
-
-
nA
8
a
RDS(ON) Drain-Source On-state Resistance
Ω
m
15
Diode Characteristics
a
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=15A, VGS=0V
-
-
-
0.8
24
16
1.1
V
-
-
ns
µ
IDS=30A, dlSD/dt=100A/ s
Qrr
nC
2
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - December, 2016
APM2518NU
®
Electrical Characteristics (Cont.) (TA=25°C Unless Otherwise Noted)
APM2518NU
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics b
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
-
-
-
-
-
-
-
2.5
1080
200
170
12
-
-
Ω
Input Capacitance
VGS=0V,
VDS=15V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
-
-
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics b
22
21
64
32
Ω
VDD=15V, RL=15 ,
11
IDS=1A, VGEN=10V,
ns
35
Ω
RG=6
17
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
18
2.7
8
25
-
VDS=15V, VGS=10V,
IDS=30A
nC
-
Note a : Pulse test ; pulse width 300 s, duty cycle 2%.
µ
≤
≤
Note b : Guaranteed by design, not subject to production testing.
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - December, 2016
APM2518NU
®
Typical Operating Characteristics
Power Dissipation
Drain Current
60
60
50
40
30
20
10
0
50
40
30
20
10
TC=25oC
0
TC=25oC,VG=10V
0
20 40 60 80 100 120 140 160 180
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
400
100
2
1
Duty = 0.5
0.2
1ms
0.1
10ms
10
1
100ms
0.05
1s
0.1
0.02
0.01
DC
Single Pulse
Mounted on 1in2 pad
TC=25OC
R
θJA :50oC/W
0.1
0.01
0.01
0.1
1
10
100
1E-4 1E-3 0.01
0.1
1
10
100
VDS - Drain - Source Voltage (V)
Square Wave PulseDuration (sec)
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - December, 2016
APM2518NU
®
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
120
100
80
60
40
20
0
28
24
20
16
12
8
6V
VGS= 7,8,9,10V
VGS=4.5V
5V
4.5V
4V
VGS=10V
4
3.5V
3V
0
0
20
40
60
80
100
120
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-Source Voltage (V)
ID -Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
32
28
24
20
16
12
8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IDS=30A
IDS =250µA
4
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - December, 2016
APM2518NU
®
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100
10
1
VGS = 10V
IDS = 30A
Tj=150oC
Tj=25oC
RON@Tj=25oC: 8mΩ
0.1
0.0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
1800
1500
1200
900
600
300
0
10
9
8
7
6
5
4
3
2
1
0
Frequency=1MHz
VDS= 15V
ID= 30A
Ciss
Coss
Crss
0
3
6
9
12
15
18
0
5
10
15
20
25
VDS - Drain - Source Voltage (V)
QG -Gate Charge (nC)
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - December, 2016
APM2518NU
®
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01Ω
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - December, 2016
APM2518NU
®
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making
great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - December, 2016
APM2518NU
®
Classification Profile
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - December, 2016
APM2518NU
®
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
100 C
°
°
Temperature min (Tsmin
)
Temperature max (Tsmax
Time (Tsmin to Tsmax) (ts)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
Time 25 C to peak temperature
)
6 C/second max.
6 C/second max.
°
°
6 minutes max.
8 minutes max.
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
Package
Volume mm3
Thickness
<350
≥350
<2.5 mm
235 °C
220 °C
220 °C
220 °C
≥2.5 mm
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
Volume mm3
350-2000
260 °C
Volume mm3
<350
>2000
260 °C
245 °C
245 °C
260 °C
1.6 mm – 2.5 mm
≥2.5 mm
260 °C
250 °C
250 °C
245 °C
Reliability Test Program
Test item
Method
JESD-22, B102
JESD-22, A108
Description
SOLDERABILITY
HTRB
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
HTGB
JESD-22, A108
JESD-22, A102
JESD-22, A104
PCT
TCT
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - December, 2016
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