SM1A16PSUBC-TUG [SINOPWER]
P-Channel Enhancement Mode MOSFET;
| 型号： | SM1A16PSUBC-TUG |
| 厂家： | 
Sinopower Semiconductor Inc |
| 描述： | P-Channel Enhancement Mode MOSFET |
| 文件： | 总10页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM1A16PSU/UB
®
P-Channel Enhancement Mode MOSFET
Features
Pin Configuration
·
-100V/-13A,
D
RDS(ON)=205mW (max.) @ VGS=-10V
RDS(ON)=300mW (max.) @ VGS=-4V
S
S
D
G
G
·
·
Reliable and Rugged
Lead Free andGreenDevicesAvailable
(RoHS Compliant)
Top View of TO-252-2
Top View of TO-251
D
·
100% UIS + Rg Tested
G
Applications
·
Power Management in Desktop Computer or
DC/DCConverters.
S
P-ChannelMOSFET
Ordering and Marking Information
Package Code
U : TO-252-2
SM1A16PS
UB : TO-251
Assembly Material
Handling Code
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel for TO-252-2 Package
TU : Tube for TO-251 Package
Assembly Material
Temperature Range
Package Code
G : Halogen and Lead Free Device
XXXXX - Lot Code
SM1A16PS U/UB :
SM1A16P
XXXXX
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
®
SM1A16PSU/UB
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
-100
±20
150
-55 to 150
-1
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
°C
°C
A
TSTG
IS
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
-52
IDP
300μs Pulse Drain Current Tested
Continuous Drain Current
A
A
-32
-13*
-8
ID
50
PD
Maximum Power Dissipation
W
20
RqJC
RqJA
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
2.5
°C/W
°C/W
50
Note：* Current limited by bond wire.
Electrical Characteristics (TA = 25°C unless otherwise noted)
SM1A16PSU/UB
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
-100
-
-
-
-
-
-
-
-
V
VGS=0V, IDS=-250mA
VDS=-80V, VGS=0V
-
-
-1
IDSS Zero Gate Voltage Drain Current
mA
TJ=85°C
-30
-3
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
VDS=VGS, IDS=-250mA
VGS=±16V, VDS=0V
VGS=-10V, IDS=-7.8A
VGS=-4V, IDS=-6A
-1
-
V
±10
205
300
mA
-
a
RDS(ON) Drain-Source On-state Resistance
mW
-
Diode Characteristics
a
VSD
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=-1A, VGS=0V
-
-
-
-0.75 -1.1
V
trr
34
59
-
-
ns
nC
IDS=-7.8A,
dlSD/dt=100A/ms
Qrr
2
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
®
SM1A16PSU/UB
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
SM1A16PSU/UB
Symbol
Parameter
Test Conditions
Unit
pF
Min. Typ. Max.
Dynamic Characteristics b
Ciss
Coss
Crss
td(ON)
tr
Input Capacitance
-
-
-
-
-
-
-
1050
70
-
-
VGS=0V,
VDS=-30V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
40
-
11
21
19
100
55
VDD=-30V, RL=30W,
IDS=-1A, VGEN=-10V,
RG=6W
10
ns
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics b
55
30
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
20.9
4.2
38
-
VDS=-50V, VGS=-10V,
IDS=-7.8A
nC
5.2
-
Note a : Pulse test ; pulse width£300ms, duty cycle£2%.
Note b : Guaranteed by design, not subject to production testing.
3
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
®
SM1A16PSU/UB
Typical Operating Characteristics
Power Dissipation
Drain Current
15
12
9
60
50
40
30
20
10
6
3
TC=25oC
0
TC=25oC,VG=-10V
0
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (oC)
Tj - Junction Temperature (oC)
Safe Operation Area
Thermal Transient Impedance
200
100
2
1
Duty = 0.5
it
m
i
L
300ms
0.2
0.1
)
n
o
(
s
d
R
10
1
1ms
10ms
0.05
100ms
0.1
0.02
0.01
1s
DC
Mounted on 1in2 pad
Single Pulse
TC=25oC
R
qJA :50oC/W
0.1
0.01
0.1
1
10
100
400
1E-4 1E-3 0.01
0.1
1
10
100
-VDS - Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
4
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
®
SM1A16PSU/UB
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
16
14
12
10
8
320
280
240
200
160
120
80
-4V
VGS=-5,-6,-7,
-8,-9,-10V
VGS=-4V
-3.5V
VGS=-10V
6
4
-3V
2
-2.5V
4
0
40
0
1
2
3
5
0
4
8
12
16
-VDS - Drain-Source Voltage (V)
-ID - Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
400
350
300
250
200
150
100
50
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IDS=-7.8A
IDS=-250mA
-50 -25
0
25 50 75 100 125 150
2
3
4
5
6
7
8
9
10
-VGS - Gate-Source Voltage (V)
Tj - Junction Temperature (oC)
5
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
®
SM1A16PSU/UB
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
20
10
2.5
2.0
1.5
1.0
0.5
0.0
VGS = -10V
IDS = -7.8A
Tj=150oC
Tj=25oC
1
RON@Tj=25oC: 150mW
0.1
-50 -25
0
25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj - Junction Temperature (oC)
-VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
1400
1200
1000
800
600
400
200
0
10
Frequency=1MHz
VDS= -50V
IDS= -7.8A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
5
10 15 20 25 30 35 40
0
3
6
9
12
15
18
21
-VDS - Drain-Source Voltage (V)
QG - Gate Charge (nC)
6
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
®
SM1A16PSU/UB
Avalanche Test Circuit and Waveforms
VDS
L
tAV
DUT
EAS
VDD
RG
VDD
IAS
tp
IL
VDS
0.01W
tp
VDSX(SUS)
Switching Time Test Circuit and Waveforms
VDS
RD
td(off) tf
td(on) tr
DUT
VGS
10%
VGS
RG
VDD
tp
90%
VDS
7
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
®
SM1A16PSU/UB
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making
great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
®
SM1A16PSU/UB
Classification Profile
9
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
®
SM1A16PSU/UB
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
Preheat & Soak
100 C
°
°
Temperature min (Tsmin
)
Temperature max (Tsmax
Time (Tsmin to Tsmax) (ts)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
Time 25 C to peak temperature
)
6 C/second max.
6 C/second max.
°
°
6 minutes max.
8 minutes max.
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
350
Package
Thickness
Volume mm3
<350
<2.5 mm
235 C
220 C
°
°
2.5 mm
220 C
220 C
³
°
°
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
Volume mm3
350-2000
260 °C
Volume mm3
>2000
<350
260 °C
260 °C
1.6 mm – 2.5 mm
³ 2.5 mm
260 °C
250 °C
250 °C
245 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
JESD-22, B102
JESD-22, A108
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
SOLDERABILITY
HTRB
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
HTGB
PCT
TCT
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
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