SM1A50NHGC-TRG [SINOPWER]

N-Channel Enhancement Mode MOSFET;


型号：	SM1A50NHGC-TRG
厂家：	Sinopower Semiconductor Inc
描述：	N-Channel Enhancement Mode MOSFET
文件：	总10页 (文件大小：238K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SM1A54NHG

N-Channel Enhancement Mode MOSFET

Features

Pin Description

•

100V/50A,

R_DS(ON)= 15.6mΩ (max.) @ V_GS=10V

100% UIS + R_gTested

Reliable and Rugged

•

Top View of TO-263-2

Lead Free andGreenDevicesAvailable

(RoHSCompliant)

Applications

•

Power Management for SMPS.

• DC-DC Converter.

N-ChannelMOSFET

Ordering and Marking Information

Package Code

SM1A54NH

G : TO-263-2

Assembly Material

Handling Code

Operating Junction Temperature Range

C : -55 to 150 ^oC

Handling Code

Temperature Range

Package Code

TR : Tape & Reel

Assembly Material

G : Halogen and Lead Free Device

SM1A54NH G :

SM1A54NH

XXXXX

XXXXX - Lot Code

Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate

termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free

requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER

defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in

homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and

advise customers to obtain the latest version of relevant information to verify before placing orders.

www.sinopowersemi.com

Rev. A.1 - September, 2017

SM1A54NHG

Absolute Maximum Ratings (T_A= 25°C Unless Otherwise Noted)

Symbol

Parameter

Rating

Unit

Common Ratings

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

100

±20

150

-55 to 150

Maximum Junction Temperature

Storage Temperature Range

°C

T_STG

I_S

Diode Continuous Forward Current

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

I_D

Continuous Drain Current

Pulsed Drain Current

I_DM

200

P_D

R_θJC

I_D

Maximum Power Dissipation

Thermal Resistance-Junction to Case

Continuous Drain Current

°C/W

1.5

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

8.9

7.1

2.5

P_D

Maximum Power Dissipation

1.6

Thermal Resistance-Junction to Ambient

Avalanche Current, Single pulse

Avalanche Energy, Single pulse

°C/W

R_θJA

I_AS

L=0.5mH

E_AS

100

Note a：Pulse width limited by maximum junction temperature.

Note b：UIS tested and pulse width limited by maximum junction temperature 150^oC (initial temperature T_j=25^oC).

Note c：Surface Mounted on 1in²pad area.

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Rev. A.1 - September, 2017

SM1A54NHG

Electrical Characteristics (T_A= 25°C Unless Otherwise Noted)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

Static Characteristics

BV_DSSDrain-Source Breakdown Voltage

100

V_GS=0V, I_DS=250µA

V_DS=80V, V_GS=0V

I_DSSZero Gate Voltage Drain Current

µA

T_J=85°C

V_GS(th)Gate Threshold Voltage

I_GSSGate Leakage Current

V_DS=V_GS, I_DS=250µA

V_GS=±20V, V_DS=0V

V_GS=10V, I_DS=25A

±100

15.6

mΩ

R_DS(ON)Drain-Source On-state Resistance

Diode Characteristics

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

I_SD=25A, V_GS=0V

0.8

1.3

I_SD=25A, dl_SD/dt=100A/µs

Q_rr

Dynamic Characteristics ^e

R_G

C_iss

C_oss

C_rss

t_d(ON)

t_r

Gate Resistance

V_GS=0V,V_DS=0V,f=1MHz

1.0

Ω

Input Capacitance

1130 1470

V_GS=0V,

V_DS=30V,

Frequency=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Turn-on Rise Time

400

V_DD=30V, R_L=30Ω,

I_DS=1A, V_GEN=10V,

R_G=6Ω

t_d(OFF)Turn-off Delay Time

t_fTurn-off Fall Time

Gate Charge Characteristics ^e

Q_g

Q_gs

Q_gd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V_DS=50V, V_GS=10V,

I_DS=25A

Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%.

Note e：Guaranteed by design, not subject to production testing.

www.sinopowersemi.com

Rev. A.1 - September, 2017

SM1A54NHG

Typical Operating Characteristics

Power Dissipation

Drain Current

T_C=25^oC

T_C=25^oC,V_G=10V

20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C)

Tj - Junction Temperature

Safe Operation Area

Thermal Transient Impedance

500

100

Duty = 0.5

0.2

0.1

0.01

1E-3

1E-4

0.05

100µs

0.02

0.01

300µs

1ms

Single Pulse

10ms

T_C=25^oC

_θJC: 1.5^oC/W

0.1

100

400

1E-6 1E-5 1E-4 1E-3 0.01 0.1 0.5

VDS - Drain - Source Voltage (V)

Square Wave PulseDuration (sec)

www.sinopowersemi.com

Rev. A.1 - September, 2017

SM1A54NHG

Typical Operating Characteristics (Cont.)

Output Characteristics

Drain-Source On Resistance

160

140

120

100

V_GS=9,10V

V_GS=10V

5.5V

4.5V

100

120

VDS - Drain - Source Voltage (V)

ID -Drain Current (A)

Gate-Source On Resistance

Gate Threshold Voltage

1.4

1.2

1.0

0.8

0.6

0.4

I_DS=25A

I_DS=250µA

-50 -25

25 50 75 100 125 150

VGS - Gate - Source Voltage (V)

Tj - Junction Temperature (°C)

www.sinopowersemi.com

Rev. A.1 - September, 2017

SM1A54NHG

Typical Operating Characteristics (Cont.)

Source-Drain Diode Forward

Drain-Source On Resistance

200

100

2.5

2.0

1.5

1.0

0.5

0.0

V_GS= 10V

I_DS= 25A

T_j=150^oC

T_j=25^oC

R_ON@T_j=25^oC: 13mΩ

0.1

0.0

0.4

0.8

1.2

1.6

-50 -25

25 50 75 100 125 150

Tj - Junction Temperature (°C)

VSD - Source - Drain Voltage (V)

Capacitance

Gate Charge

1800

1500

1200

900

600

300

Frequency=1MHz

V_DS= 50V

I_DS= 25A

Ciss

Coss

Crss

10 15 20 25 30 35 40

VDS -Drain-Source Voltage (V)

QG -Gate Charge (nC)

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Rev. A.1 - September, 2017

SM1A54NHG

Avalanche Test Circuit and Waveforms

VDS

VDSX(SUS)

DUT

VDS

IAS

VDD

EAS

0.01Ω

tAV

Switching Time Test Circuit and Waveforms

VDS

90%

DUT

VGS

VDD

10%

VGS

td(on) tr

td(off) tf

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Rev. A.1 - September, 2017

SM1A54NHG

Disclaimer

Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making

great efforts to development high quality and better performance products to

satisfy all customers’ needs. However, a product may fail to meet customer’s

expectation or malfunction for various situations.

All information which is shown in the datasheet is based on Sinopower’s

research and development result, therefore, Sinopower shall reserve the right

to adjust the content and monitor the production.

In order to unify the quality and performance, Sinopower has been following

JEDEC while defines assembly rule. Notwithstanding all the suppliers

basically follow the rule for each product, different processes may cause

slightly different results.

The technical information specified herein is intended only to show the typical

functions of and examples of application circuits for the products. Sinopower

does not grant customers explicitly or implicitly, any license to use or exercise

intellectual property or other rights held by Sinopower and other parties.

Sinopower shall bear no responsible whatsoever for any dispute arising from

the use of such technical information.

The products are not designed or manufactured to be used with any

equipment, device or system which requires an extremely high level of

reliability, such as the failure or malfunction of which any may result in a direct

threat to human life or a risk of human injury. Sinopower shall bear no

responsibility in any way for use of any of the products for the above special

purposes. If a product is intended to use for any such special purpose, such

as vehicle, military, or medical controller relevant applications, please contact

Sinopower sales representative before purchasing.

www.sinopowersemi.com

Rev. A.1 - September, 2017

SM1A54NHG

Classification Profile

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Rev. A.1 - September, 2017

SM1A54NHG

Classification Reflow Profiles

Profile Feature

Preheat & Soak

Sn-Pb Eutectic Assembly

Pb-Free Assembly

150 C

100 C

Temperature min (T_smin

)

Temperature max (T_smax

Time (T_sminto T_smax) (t_s)

150 C

200 C

)

60-120 seconds

Average ramp-up rate

(T_smaxto T_P)

3 C/second max.

Liquidous temperature (T_L)

Time at liquidous (t_L)

183 C

60-150 seconds

217 C

60-150 seconds

Peak package body Temperature

(T_p)*

See Classification Temp in table 1

See Classification Temp in table 2

30** seconds

Time (t )** within 5 C of the specified

20** seconds

classification temperature (T_c)

Average ramp-down rate (T_pto T_smax

Time 25 C to peak temperature

)

6 C/second max.

6 minutes max.

8 minutes max.

* Tolerance for peak profile Temperature (T_p) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (t_p) is defined as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

Package

Thickness

Volume mm³

<350

Volume mm³

≥350

<2.5 mm

235 °C

220 °C

≥2.5 mm

Table 2. Pb-free Process – Classification Temperatures (Tc)

Package

Volume mm³

<350

Volume mm³

350-2000

Volume mm³

Thickness

>2000

<1.6 mm

1.6 mm – 2.5 mm

≥2.5 mm

260 °C

250 °C

260 °C

250 °C

245 °C

260 °C

245 °C

Reliability Test Program

Test item

Method

JESD-22, B102

JESD-22, A108

Description

SOLDERABILITY

HTRB

5 Sec, 245°C

1000 Hrs, 80% of VDS max @ Tjmax

1000 Hrs, 100% of VGS max @ Tjmax

168 Hrs, 100%RH, 2atm, 121°C

500 Cycles, -65°C~150°C

HTGB

JESD-22, A108

JESD-22, A102

JESD-22, A104

PCT

TCT

Customer Service

Sinopower Semiconductor, Inc.

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,

Hsinchu, 30078, Taiwan

TEL: 886-3-5635818 Fax: 886-3-5635080

www.sinopowersemi.com

Rev. A.1 - September, 2017

SM1A50NHGC-TRG [SINOPWER]

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