SM2692NSCC-TRG [SINOPWER]
N-Channel Enhancement Mode MOSFET;
| 型号： | SM2692NSCC-TRG |
| 厂家： | 
Sinopower Semiconductor Inc |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总12页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM2692NSC
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
·
200V/1.2A,
S
D
RDS(ON)= 700mW(max.) @ VGS=10V
ESD Protection
D
G
D
·
·
·
·
D
100% UIS + Rg Tested
Reliable and Rugged
Top View of SOT-23-6
Lead Free andGreenDevicesAvailable
(RoHSCompliant)
(1,2,5,6)
DD DD
Applications
(3)G
·
·
DC-DC converter forNetworking.
Load switch.
(4)S
N-ChannelMOSFET
Ordering and Marking Information
Package Code
C : SOT-23-6
SM2692NS
Assembly Material
Handling Code
Operating Junction Temperature Range
C : -55 to 150 oC
Temperature Range
Package Code
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XX - Lot Code
C92XX
SM2692NS C :
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2015
®
SM2692NSC
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
Drain-Source Voltage
Gate-Source Voltage
200
±25
150
-55 to 150
1.2
V
Maximum Junction Temperature
Storage Temperature Range
°C
A
TSTG
IS
Diode Continuous Forward Current
TA=25°C
TA=25°C
TA=70°C
TA=25°C
TA=25°C
TA=70°C
t £ 10s
1.2
ID
Continuous Drain Current
Pulsed Drain Current
A
0.96
4.8
a
IDM
A
2.5
PD
Maximum Power Dissipation
W
1.6
50
°C/W
°C/W
A
c
Thermal Resistance-Junction to Ambient
RqJA
Steady State
L=0.5mH
L=0.5mH
90
b
IAS
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
1
b
EAS
0.25
mJ
Note a：Pulse width limited by max. junction temperature.
Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note c：Surface mounted on 1in2 pad area.
2
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2015
®
SM2692NSC
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
200
-
-
1
V
VGS=0V, IDS=250mA
VDS=160V, VGS=0V
-
-
-
IDSS Zero Gate Voltage Drain Current
mA
TJ=85°C
-
4
30
5
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
3
-
V
VDS=VGS, IDS=250mA
VGS=±25V, VDS=0V
VGS=10V, IDS=1A
-
±10
700
mA
d
RDS(ON) Drain-Source On-state Resistance
-
580
mW
Diode Characteristics
d
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=1A, VGS=0V
-
-
-
0.8
48
1.3
V
-
-
ns
nC
ISD=1A, dlSD/dt=100A/ms
Qrr
70
Dynamic Characteristics e
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,f=1MHz
-
-
-
-
-
-
-
-
4
280
25
8.5
10
8
-
370
-
W
Input Capacitance
VGS=0V,
VDS=30V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
pF
-
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
18
15
17
4
VDD=30V, RL=30W,
IDS=1A, VGEN=10V,
RG=6W
ns
9
2
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
6
2
9
-
VDS=100V, VGS=10V,
IDS=1A
nC
1.5
-
Note d：Pulse test ; pulse width£300ms, duty cycle£2%.
Note e：Guaranteed by design, not subject to production testing.
3
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2015
®
SM2692NSC
Typical Operating Characteristics
Power Dissipation
Drain Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.5
2.0
1.5
1.0
0.5
TA=25oC,VG=10V
TA=25oC
0.0
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature
Safe Operation Area
Thermal Transient Impedance
10
2
1
Duty = 0.5
0.2
0.1
0.05
1
0.02
0.01
0.1
0.01
1E-3
300ms
1ms
0.1
10ms
Single Pulse
100ms
1s
Mounted on 1in2 pad
TA=25oC
R
qJA : 50 oC/W
DC
0.01
0.1
1
10
100
800
1E-4 1E-3 0.01 0.1
1
10 100 1000
VDS - Drain - Source Voltage (V)
Square Wave PulseDuration (sec)
4
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2015
®
SM2692NSC
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
5
4
3
2
1
0
1400
1200
1000
800
600
400
200
0
VGS=8,9,10V
7V
VGS=10V
6.5V
6V
5.5V
5V
0
1
2
3
4
5
0
1
2
3
4
5
VDS - Drain - Source Voltage (V)
ID -Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1400
1200
1000
800
1.4
1.2
1.0
0.8
0.6
0.4
IDS=1A
IDS =250mA
600
400
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
5
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2015
®
SM2692NSC
Typical Operating Characteristics (Cont.)
Source-Drain Diode Forward
Drain-Source On Resistance
5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V
IDS = 1A
Tj=150oC
1
Tj=25oC
RON@Tj=25oC: 580mW
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Frequency=1MHz
Ciss
Gate Charge
350
300
250
200
150
100
50
10
VDS =100V
IDS =1A
9
8
7
6
5
4
3
2
1
0
Coss
Crss
0
0
8
16
24
32
40
0
1
2
3
4
5
6
VDS -Drain-Source Voltage (V)
QG -Gate Charge (nC)
6
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2015
®
SM2692NSC
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01W
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
7
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2015
®
SM2692NSC
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making
great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2015
®
SM2692NSC
Package Information
D
e
SEE
VIEW A
b
c
e1
GAUGE PLANE
SEATING PLANE
L
VIEW A
SOT-23-6
RECOMMENDED LAND PATTERN
S
Y
M
B
O
L
MILLIMETERS
INCHES
0.63
MIN.
-
MAX.
MIN.
-
MAX.
0.049
0.002
0.047
0.020
0.009
A
1.25
0.05
1.20
0.50
0.22
0.000
0.035
0.012
0.003
A1
A2
b
0.00
0.90
0.30
0.08
c
2.4
D
3.10
3.00
1.80
0.106
0.102
0.055
0.122
0.118
0.071
2.70
2.60
1.40
E
E1
e
0.8
0.95 BSC
1.90 BSC
0.037 BSC
0.075 BSC
e1
L
0.012
0.024
0.30
0.60
0.95
8
0
8
0
0
UNIT: mm
Note : 1. Follow JEDEC TO-178 AB.
2. Dimension D and E1 do not include mold flash, protrusions or
gate burrs. Mold flash, protrusion or gate burrs shall not exceed
10 mil per side.
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2015
®
SM2692NSC
Carrier Tape & Reel Dimensions
P0
P2
P1
A
OD0
K0
A0
A
OD1
B
B
SECTION A-A
SECTION B-B
d
T1
Application
SOT-23-6
A
H
T1
C
d
D
W
E1
F
8.4+2.00 13.0+0.50
-0.00 -0.20
178.0±2.00 50 MIN.
P0 P1
1.5 MIN. 20.2 MIN. 8.0±0.30 1.75±0.10 3.5±0.05
P2 D0
4.0±0.10 4.0±0.10 2.0±0.05
D1
T
A0
B0
K0
1.5+0.10
-0.00
0.6+0.00
-0.40
1.0 MIN.
3.20±0.20 3.10±0.20 1.50±0.20
(mm)
10
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2015
®
SM2692NSC
Taping Direction Information
SOT-23-6
USER DIRECTION OF FEED
AAAXX
AAAXX
AAAXX
AAAXX
AAAXX
AAAXX
AAAXX
Classification Profile
11
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - July, 2015
®
SM2692NSC
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
Preheat & Soak
100 C
°
°
Temperature min (Tsmin
)
Temperature max (Tsmax
Time (Tsmin to Tsmax) (ts)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
Time 25 C to peak temperature
)
6 C/second max.
6 C/second max.
°
°
6 minutes max.
8 minutes max.
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
350
Package
Thickness
Volume mm3
<350
<2.5 mm
235 C
220 C
°
°
2.5 mm
220 C
220 C
³
°
°
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
Volume mm3
350-2000
260 °C
Volume mm3
>2000
<350
260 °C
260 °C
1.6 mm – 2.5 mm
³ 2.5 mm
260 °C
250 °C
250 °C
245 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
JESD-22, B102
JESD-22, A108
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
SOLDERABILITY
HTRB
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
HTGB
PCT
TCT
Customer Service
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5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
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Rev. A.1 - July, 2015
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