SM3120NCF [SINOPWER]
N-Channel Enhancement Mode MOSFET;
| 型号： | SM3120NCF |
| 厂家： | 
Sinopower Semiconductor Inc |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总10页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM3120NCF
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
33V/66A,
RDS(ON)=11.8mΩ (max.) @ VGS=10V
100% UIS + Rg Tested
•
•
•
S
D
Reliable and Rugged
G
Lead Free andGreenDevicesAvailable
(RoHSCompliant)
Top View of TO-220
D
Applications
G
•
For Power Tool Switching applications.
S
N-ChannelMOSFET
Ordering and Marking Information
Package Code
F : TO-220
SM3120NC
Assembly Material
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
Handling Code
Temperature Range
TU : Tube
Assembly Material
G : Halogen and Lead Free Device
Package Code
SM3120NC F :
XXXXX - Lot Code
SM3120NC
XXXXX
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright Sinopower Semiconductor, Inc.
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SM3120NCF
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
Drain-Source Voltage (VGS=0V)
Gate-Source Voltage
Clamped
±20
150
-55 to 150
±50
±50
30
V
Maximum Junction Temperature
Storage Temperature Range
°C
mA
TSTG
IDG
Drain-Gate Current (Continuous)
Gate-Source Current (Continuous)
Diode Continuous Forward Current
IGS
IS
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=25°C
TC=100°C
Steady State
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Steady State
L=0.5mH
L=0.5mH
66
ID
Continuous Drain Current
Pulsed Drain Current
A
42
a
IDM
264
104
41.6
1.2
PD
RθJC
ID
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Continuous Drain Current
W
°C/W
A
9.2
7.2
2
PD
Maximum Power Dissipation
W
1.25
62.5
27
Thermal Resistance-Junction to Ambient
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
°C/W
A
RθJA
b
IAS
b
EAS
182
mJ
Note a：Pulse width limited by max. junction temperature.
Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
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Rev. A.1 - October, 2015
SM3120NCF
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS=0V, IDS=1mA
VDS=26V, VGS=0V
33
-
-
-
-
V
10
IDSS Zero Gate Voltage Drain Current
µA
TJ=85°C
-
-
100
4
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
2
-
3
V
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=40A
-
±30
11.8
µA
mΩ
c
RDS(ON) Drain-Source On-state Resistance
-
9.8
Diode Characteristics
c
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=20A, VGS=0V
-
-
-
0.8
39
1.3
V
-
-
ns
nC
ISD=40A, dlSD/dt=100A/µs
Qrr
56
Dynamic Characteristics d
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,f=1MHz
-
-
-
-
-
-
-
-
2.5
-
Ω
Input Capacitance
2200 2890
VGS=0V,
VDS=30V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
270
142
16
-
pF
-
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics d
29
22
80
47
VDD=30V, RL=30Ω,
IDS=1A, VGEN=10V,
RG=6Ω
12
ns
44
26
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
41
58
-
VDS=20V, VGS=10V,
IDS=40A
12.5
11.5
nC
-
Note c：Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note d：Guaranteed by design, not subject to production testing.
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Rev. A.1 - October, 2015
SM3120NCF
®
Typical Operating Characteristics
Power Dissipation
Drain Current
120
75
60
45
30
15
0
100
80
60
40
20
TC=25oC,VG=10V
TC=25oC
0
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
500
100
3
1
Duty = 0.5
0.2
0.1
100µs
0.1
0.01
1E-3
1E-4
0.05
0.02
0.01
300µs
1ms
10
10ms
DC
Single Pulse
TC=25oC
R
θJC : 1.2oC/W
1
0.1
1
10
100
1E-6
1E-5
1E-4
1E-3
0.01
0.1
VDS - Drain - Source Voltage (V)
Square Wave PulseDuration (sec)
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SM3120NCF
®
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
24
20
16
12
8
200
160
120
80
VGS=8,9,10V
7V
VGS=10V
6V
40
5.5V
5V
4
4
0
0
0
30
60
90
120
150
180
0
1
2
3
5
6
VDS - Drain - Source Voltage (V)
ID -Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
40
35
30
25
20
15
10
5
IDS=40A
IDS =250µA
-50 -25
0
25 50 75 100 125 150
4
5
6
7
8
9
10
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
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Rev. A.1 - October, 2015
SM3120NCF
®
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.5
2.0
1.5
1.0
0.5
0.0
200
100
VGS = 10V
IDS = 40A
Tj=150oC
10
Tj=25oC
1
RON@Tj=25oC: 9.8mΩ
0.1
0.0
-50 -25
0
25 50 75 100 125 150
0.4
0.8
1.2
1.6
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
3500
3000
2500
2000
1500
1000
500
10
9
8
7
6
5
4
3
2
1
0
Frequency=1MHz
VDS =20V
IDS =40A
Ciss
Crss
Coss
0
0
5
10
15
20
25
30
35
0
6
12
18
24
30
36
42
VDS - Drain - Source Voltage (V)
QG -Gate Charge (nC)
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Rev. A.1 - October, 2015
SM3120NCF
®
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01Ω
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
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Rev. A.1 - October, 2015
SM3120NCF
®
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making
great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
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Rev. A.1 - October, 2015
SM3120NCF
®
Classification Profile
Copyright Sinopower Semiconductor, Inc.
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SM3120NCF
®
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
100 C
°
°
Temperature min (Tsmin
)
Temperature max (Tsmax
Time (Tsmin to Tsmax) (ts)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
Time 25 C to peak temperature
)
6 C/second max.
6 C/second max.
°
°
6 minutes max.
8 minutes max.
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
Package
Volume mm3
Thickness
<350
≥350
<2.5 mm
235 °C
220 °C
220 °C
220 °C
≥2.5 mm
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
Volume mm3
350-2000
260 °C
Volume mm3
<350
>2000
260 °C
245 °C
245 °C
260 °C
1.6 mm – 2.5 mm
≥2.5 mm
260 °C
250 °C
250 °C
245 °C
Reliability Test Program
Test item
Method
JESD-22, B102
JESD-22, A108
Description
SOLDERABILITY
HTRB
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
HTGB
JESD-22, A108
JESD-22, A102
JESD-22, A104
PCT
TCT
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
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Rev. A.1 - October, 2015
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