SM4066CSKC-TRG [SINOPWER]
Dual Enhancement Mode MOSFET (N-and P-Channel);
| 型号： | SM4066CSKC-TRG |
| 厂家： | 
Sinopower Semiconductor Inc |
| 描述： | Dual Enhancement Mode MOSFET (N-and P-Channel) |
| 文件： | 总14页 (文件大小：283K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM4066CSK
®
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
Pin Description
D1
D1
D2
•
N Channel
D2
40V/7.5A,
RDS(ON) = 21mΩ (max.) @ VGS = 10V
RDS(ON) = 25mΩ (max.) @ VGS = 4.5V
P Channel
S1
G1
S2
•
G2
-40V/-5.5A,
Top View of SOP-8
RDS(ON) = 38mΩ (max.) @ VGS =-10V
RDS(ON) = 62mΩ (max.) @ VGS =-4.5V
100% UIS + Rg Tested
(8) (7)
D1 D1
(6) (5)
D2 D2
•
•
•
Reliable and Rugged
Lead FreeAvailable (RoHS Compliant)
(2)
G1
(4)
G2
Applications
•
•
•
Synchronous Rectification
S1
(1)
Motor Control
S2
(3)
Fan Pre-driver H-bridge
N-ChannelMOSFET
P-ChannelMOSFET
Ordering and Marking Information
Package Code
K : SOP-8
SM4066CS
Operating Junction Temperature Range
Assembly Material
Handling Code
C : -55 to 150 oC
Handling Code
Temperature Range
TR : Tape & Reel
Assembly Material
Package Code
G : Halogen and Lead Free Device
4066CS
XXXXX
SM4066CS K :
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
SM4066CSK
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
N Channel P Channel Unit
Common Ratings
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
40
-40
V
V
±20
±20
TJ
Maximum Junction Temperature
150
-55 to 150
°C
°C
A
TSTG Storage Temperature Range
IS
Diode Continuous Forward Current
Pulse Drain Current Tested
2
-2
-22
-5.5
-4.5
2
IDP
VGS=10V(N),VGS=-10V(P)
TA=25°C
30
7.5
6
A
ID
Continuous Drain Current
A
TA=70°C
TA=25°C
2
PD
Maximum Power Dissipation
W
TA=70°C
1.3
50
1.3
50
Thermal Resistance-Junction to Lead
Steady State
°C/W
°C/W
RθJL
RθJA
62.5
110
10
62.5
110
10
t ≤ 10s
Thermal Resistance-Junction to Ambient
Steady State b
L=0.5mH
a
IAS
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
A
a
EAS
L=0.5mH
25
25
mJ
Note a：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note b：Surface Mounted on 1in2 pad area, t =999sec.
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
SM4066CSK
®
N Channel Electrical Characteristics (TA = 25°C unless otherwise noted)
N Channel
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
40
-
-
-
1
V
VGS=0V, IDS=250µA
VDS=32V, VGS=0V
-
IDSS Zero Gate Voltage Drain Current
µA
TJ=85°C
-
1.5
-
-
30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
2
2.5
±100
21
V
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=6A
VGS=4.5V, IDS=5A
-
nA
-
16
18
c
RDS(ON) Drain-Source On-state Resistance
mΩ
-
25
Diode Characteristics
c
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=1A, VGS=0V
-
-
-
0.75
13
1.1
V
-
-
ns
nC
IDS=6A, dlSD/dt=100A/µs
Qrr
8.7
Dynamic Characteristics d
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
-
-
-
-
-
-
-
2.5
815
95
-
-
-
-
-
-
-
-
Ω
Input Capacitance
VGS=0V,
VDS=20V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
pF
60
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics d
7.8
6.9
22.4
4.8
VDD=20V, RL=20Ω,
IDS=1A, VGEN=10V,
RG=6Ω
ns
VDS=20V, VGS=10V,
IDS=6A
Qg
Total Gate Charge
-
15.7
22
Qg
Qgth
Qgs
Qgd
Total Gate Charge
-
-
-
-
7.5
10.5
nC
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
1.85
3.24
2.75
-
-
-
VDS=20V, VGS=4.5V,
IDS=6A
Note c：Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note d：Guaranteed by design, not subject to production testing.
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
SM4066CSK
®
P Channel Electrical Characteristics (TA = 25°C unless otherwise noted)
P Channel
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
-40
-
-
-
-1
V
µA
mA
V
VGS=0V, IDS=-250µA
VDS=-32V, VGS=0V
-
IDSS Zero Gate Voltage Drain Current
TJ=85°C
-
-
-30
-2.5
±100
38
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
-1.5
-2
-
VDS=VGS, IDS=-250µA
VGS=±20V, VDS=0V
VGS=-10V, IDS=-5.5A
VGS=-4.5V, IDS=-3.5A
-
-
-
nA
30
46
c
RDS(ON) Drain-Source On-state Resistance
mΩ
62
Diode Characteristics
c
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=-1A, VGS=0V
-
-
-
-0.75
15
-1
-
V
ns
nC
IDS=-5.5A,
dlSD/dt=100A/µs
Qrr
8
-
Dynamic Characteristics d
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
-
-
-
-
-
-
-
8
668
98
72
8.7
7
-
-
-
-
-
-
-
-
Ω
Input Capacitance
VGS=0V,
VDS=-20V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
pF
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics d
VDD=-20V, RL=20Ω,
IDS=-1A, VGEN=-10V,
RG=6Ω
ns
31
17
VDS=-20V, VGS=-10V,
IDS=-5.5A
Qg
Total Gate Charge
-
15
-
Qg
Qgth
Qgs
Qgd
Total Gate Charge
-
-
-
-
7.5
1.4
2.4
3.5
-
-
-
-
nC
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=-20V, VGS=-4.5V,
IDS=-5.5A
Note c：Pulse test; pulse width≤300µs, duty cycle≤2%.
Note d：Guaranteed by design, not subject to production testing.
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
SM4066CSK
®
N Channel Typical Operating Characteristics
Drain Current
Power Dissipation
2.4
2.0
1.6
1.2
0.8
0.4
0.0
9.0
7.5
6.0
4.5
3.0
1.5
0.0
TA=25oC
TA=25oC,VG=10V
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
100
10
2
1
Duty = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
1E-3
300µs
1ms
1
10ms
100ms
0.1
Single Pulse
1s
DC
Mounted on 1in2 pad
TA=25oC
R
θJA :62.5 oC/W
0.01
0.01
0.1
1
10
100 300
1E-4 1E-3 0.01
0.1
1
10 60
Square Wave PulseDuration (sec)
VDS - Drain - Source Voltage (V)
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
SM4066CSK
®
N Channel Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
30
25
20
15
10
5
30
25
20
15
10
5
VGS=4,5,6,7,8,9,10V
3.5V
VGS=4.5V
VGS=10V
3V
0
0.0
0
5
10
15
20
25
30
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain - Source Voltage (V)
ID -Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
56
48
40
32
24
16
8
IDS=6A
IDS =250µA
-50 -25
0
25 50 75 100 125 150
2
3
4
5
6
7
8
9
10
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
6
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
SM4066CSK
®
N Channel Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
30
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
= 10V
GS
IDS = 6A
Tj=150oC
Tj=25oC
1
RON@Tj=25oC: 16mΩ
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1200
1000
800
600
400
200
0
10
Frequency=1MHz
VDS=20V
IDS=6A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
4
8
12
16
0
8
16
24
32
40
QG -Gate Charge (nC)
VDS - Drain - Source Voltage (V)
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
SM4066CSK
®
P Channel Typical Operating Characteristics
Drain Current
Power Dissipation
2.4
2.0
1.6
1.2
0.8
0.4
0.0
6
5
4
3
2
1
0
TA=25oC
TA=25oC,VG=-10V
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
100
10
2
1
Duty = 0.5
0.2
0.1
0.05
300µs
0.1
0.01
1E-3
0.02
0.01
1ms
1
10ms
100ms
Single Pulse
0.1
1s
DC
Mounted on 1in2 pad
TA=25oC
R
θJA : 62.5 oC/W
0.01
0.01
0.1
1
10
100 300
1E-4 1E-3 0.01
0.1
1
10 60
-VDS - Drain - Source Voltage (V)
Square Wave PulseDuration (sec)
8
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
SM4066CSK
®
P Channel Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
21
18
15
12
9
80
70
60
50
40
30
20
10
VGS=-5,-6,-7,-8,-9,-10V
-4V
VGS=-4.5V
VGS=-10V
-3.5V
-3V
6
3
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
20
-ID -Drain Current (A)
-VDS - Drain - Source Voltage (V)
Gate Threshold Voltage
Gate-Source On Resistance
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
140
120
100
80
IDS =-250µA
IDS=-5.5A
60
40
20
0
-50 -25
0
25 50 75 100 125 150
2
3
4
5
6
7
8
9
10
Tj - Junction Temperature (°C)
-VGS - Gate - Source Voltage (V)
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
SM4066CSK
®
P Channel Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
20
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
VGS = -10V
IDS = -5.5A
Tj=150oC
Tj=25oC
1
RON@Tj=25oC: 30mΩ
0.1
0.0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1000
900
800
700
600
500
400
300
200
100
0
10
9
8
7
6
5
4
3
2
1
0
Frequency=1MHz
VDS=-20V
IDS=-5.5A
Ciss
Coss
Crss
0
3
6
9
12
15
0
8
16
24
32
40
QG -Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
SM4066CSK
®
Avalanche Test Circuit and Waveforms
N Channel
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01Ω
tAV
tAV
P Channel
VDS
L
DUT
EAS
VDD
RG
VDD
tp
IAS
IL
VDS
0.01Ω
tp
VDSX(SUS)
Switching Time Test Circuit and Waveforms
N Channel
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
P Channel
VDS
RD
td(off) tf
td(on) tr
DUT
VGS
10%
VGS
RG
VDD
tp
90%
VDS
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
SM4066CSK
®
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making
great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
SM4066CSK
®
Classification Profile
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
SM4066CSK
®
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
100 C
°
°
Temperature min (Tsmin
)
Temperature max (Tsmax
Time (Tsmin to Tsmax) (ts)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 C/second max.
°
6 C/second max.
°
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
Package
Volume mm3
Thickness
<350
≥350
<2.5 mm
235 °C
220 °C
220 °C
220 °C
≥2.5 mm
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
Volume mm3
350-2000
260 °C
Volume mm3
<350
>2000
260 °C
245 °C
245 °C
260 °C
1.6 mm – 2.5 mm
≥2.5 mm
260 °C
250 °C
250 °C
245 °C
Reliability Test Program
Test item
Method
JESD-22, B102
JESD-22, A108
Description
SOLDERABILITY
HTRB
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
HTGB
JESD-22, A108
JESD-22, A102
JESD-22, A104
PCT
TCT
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
相关型号：
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OHMITE
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