SM6018NSUC-TRG [SINOPWER]
N-Channel Enhancement Mode MOSFET;
| 型号： | SM6018NSUC-TRG |
| 厂家： | 
Sinopower Semiconductor Inc |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总10页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM6018NSU/SM6018NSUB
®
N-Channel Enhancement Mode MOSFET
Features
Pin Configuration
·
60V/24A,
D
RDS(ON) = 40mW (max.) @ VGS = 10V
RDS(ON )= 50mW (max.) @ VGS = 5V
S
S
D
G
G
·
·
Reliable and Rugged
Lead Free andGreenDevicesAvailable
(RoHS Compliant)
Top View of TO-252-2
Top View of TO-251
D
·
100% UIS + Rg Tested
Applications
G
·
·
·
Switching Application for Actuator.
Converter Application in LED TV.
Switching Application in Industry.
S
N-ChannelMOSFET
Ordering and Marking Information
Package Code
U : TO-252-2
SM6018NS
UB : TO-251
Assembly Material
Handling Code
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (TO-252-2)
TU : Tube (TO-251)
Assembly Material
Temperature Range
Package Code
G : Halogen and Lead Free Device
XXXXX - Lot Code
SM6018NS U/UB :
SM6018N
XXXXX
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
1
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Rev. A.4 - July, 2015
SM6018NSU/SM6018NSUB
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
Drain-Source Voltage
Gate-Source Voltage
60
±20
175
-55 to 175
12
V
Maximum Junction Temperature
Storage Temperature Range
°C
°C
A
TSTG
IS
Diode Continuous Forward Current
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
96
IDP
Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
A
A
68
24
ID
17
60
PD
W
30
RqJC
RqJA
EAS
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Energy
2.5
°C/W
°C/W
mJ
50
L=0.5mH
22
2
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
SM6018NSU/SM6018NSUB
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
60
-
-
-
-
1
V
VGS=0V, IDS=250mA
VDS=48V, VGS=0V
IDSS Zero Gate Voltage Drain Current
mA
TJ=125°C
-
-
30
3
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
1
-
2
-
V
VDS=VGS, IDS=250mA
VGS=±16V, VDS=0V
VGS=10V, IDS=12A
VGS=5V, IDS=11A
±10
40
50
mA
-
32
-
a
RDS(ON) Drain-Source On-state Resistance
mW
-
Diode Characteristics
a
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=12A, VGS=0V
-
-
-
0.8
30
35
1.3
V
-
-
ns
nC
IDS=12A, dlSD/dt=100A/ms
Qrr
Dynamic Characteristics b
Ciss
Coss
Crss
td(ON)
Tr
Input Capacitance
-
-
-
-
-
-
-
530
85
40
8
-
VGS=0V,
VDS=30V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
-
pF
ns
-
15
15
51
41
VDD=30V, RL=30W,
IDS=1A, VGEN =10V,
RG=6W
8
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics b
28
22
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
12
3
17
-
VDS=30V, VGS=10V,
IDS=12A
Qgs
Qgd
nC
3
-
Note a： Pulse test ; pulse width£300ms, duty cycle£2%.
Note b：Guaranteed by design, not subject to production testing.
3
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
SM6018NSU/SM6018NSUB
®
Typical Operating Characteristics
Power Dissipation
Drain Current
70
30
25
20
15
10
5
60
50
40
30
20
10
TC=25oC
0
TC=25oC,VG=10V
0
0
20 40 60 80 100 120 140 160 180
0
20 40 60 80 100 120 140 160 180
Tj - Junction Temperature (oC)
Tj - Junction Temperature (oC)
Safe Operation Area
Thermal Transient Impedance
500
100
2
1
Duty = 0.5
0.2
0.1
300us
1ms
0.05
10
1
10ms
100ms
0.02
0.01
0.1
1s
DC
Single Pulse
Mounted on 1in2 pad
TC=25oC
R
qJA :50oC/W
0.1
0.01
0.01
0.1
1
10
100 300
1E-4 1E-3 0.01
0.1
1
10
100
VDS - Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
4
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
SM6018NSU/SM6018NSUB
®
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
30
25
20
15
10
5
70
60
50
40
30
20
10
VGS=4.5,5,6,7,8,9,10V
4V
VGS=5V
VGS=10V
3.5V
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
100
90
80
70
60
50
40
30
20
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IDS=12A
IDS=250mA
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150 175
VGS - Gate-Source Voltage (V)
Tj - Junction Temperature (oC)
5
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
SM6018NSU/SM6018NSUB
®
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
3.0
2.5
2.0
1.5
1.0
0.5
0.0
30
10
VGS = 10V
IDS = 12A
Tj=150oC
Tj=25oC
1
RON@Tj=25oC: 32mW
0.1
-50 -25
0
25 50 75 100 125 150 175
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj - Junction Temperature (oC)
VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
720
640
560
480
400
320
240
160
80
10
Frequency=1MHz
VDS= 30V
IDS= 12A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
0
2
4
6
8
10
12
0
5
10 15 20 25 30 35 40
VDS - Drain-Source Voltage (V)
QG - Gate Charge (nC)
6
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
SM6018NSU/SM6018NSUB
®
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01W
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
7
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
SM6018NSU/SM6018NSUB
®
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making
great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
SM6018NSU/SM6018NSUB
®
Classification Profile
9
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
SM6018NSU/SM6018NSUB
®
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
Preheat & Soak
100 C
°
°
Temperature min (Tsmin
)
Temperature max (Tsmax
Time (Tsmin to Tsmax) (ts)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 C/second max.
°
6 C/second max.
°
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
350
Package
Volume mm3
<350
Thickness
<2.5 mm
235 °C
220 °C
220 °C
220 °C
³ 2.5 mm
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Volume mm3
Volume mm3
Volume mm3
Thickness
<1.6 mm
1.6 mm – 2.5 mm
³ 2.5 mm
<350
350-2000
260 °C
>2000
260 °C
245 °C
245 °C
260 °C
260 °C
250 °C
250 °C
245 °C
Reliability Test Program
Test item
Method
JESD-22, B102
JESD-22, A108
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
SOLDERABILITY
HTRB
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
HTGB
PCT
TCT
Customer Service
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5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
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