SM6128NSKC-TRG [SINOPWER]
N-Channel Enhancement Mode MOSFET;
| 型号： | SM6128NSKC-TRG |
| 厂家： | 
Sinopower Semiconductor Inc |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总11页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM6128NSK
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
D
D
D
D
•
60V/12A,
RDS(ON)= 12mΩ (max.) @ VGS=10V
RDS(ON)= 14.5mΩ (max.) @ VGS=4.5V
S
S
S
G
•
•
Reliable and Rugged
Lead Free and GreenDevices Available
(RoHSCompliant)
Top View of SOP-8
(5,6,7,8)
DD DD
Applications
•
•
•
•
Secondary Side Synchronous Rectification
DC-DC Converter
(4)
G
Motor Control
Load Switching
S S S
( 1, 2, 3 )
N-ChannelMOSFET
Ordering and Marking Information
Package Code
K : SOP-8
SM6128NS
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
Assembly Material
Handling Code
Temperature Range
Package Code
G : Halogen and Lead Free Device
SM6128NS K :
XXXXX - Lot Code
6128NS
XXXXX
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - August, 2014
SM6128NSK
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
Drain-Source Voltage
Gate-Source Voltage
60
±20
150
-55 to 150
6
V
Maximum Junction Temperature
Storage Temperature Range
°C
TSTG
IS
Diode Continuous Forward Current
TA=25°C
TA=25°C
TA=70°C
TA=25°C
TA=25°C
TA=70°C
t ≤ 10s
A
12
ID
Continuous Drain Current
Pulsed Drain Current
9.5
A
a
IDM
48
3.5
PD
Maximum Power Dissipation
W
2.2
35
°C/W
°C/W
A
c
Thermal Resistance-Junction to Ambient
RθJA
Steady State
L=0.5mH
L=0.5mH
70
b
IAS
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
20
b
EAS
100
mJ
Note a：Pulse width limited by max. junction temperature.
Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note c：Surface Mounted on 1in2 pad area.
2
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - August, 2014
SM6128NSK
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
60
-
-
-
-
1
V
VGS=0V, IDS=250µA
VDS=48V, VGS=0V
IDSS Zero Gate Voltage Drain Current
µA
TJ=85°C
-
-
30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
1
-
2
3
V
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=10A
VGS=4.5V, IDS=8A
-
±100
12
nA
-
10
11
mΩ
mΩ
d
RDS(ON) Drain-Source On-state Resistance
-
14.5
Diode Characteristics
d
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=5A, VGS=0V
-
-
-
0.8
28
35
1.3
V
-
-
ns
nC
ISD=10A, dlSD/dt=100A/µs
Qrr
Dynamic Characteristics e
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,f=1MHz
-
-
-
-
-
-
-
-
1
-
Ω
Input Capacitance
2500 3500
VGS=0V,
VDS=30V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
215
105
18
-
pF
-
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
33
18
131
49
VDD=30V, RL=30Ω,
IDS=1A, VGEN=10V,
RG=6Ω
10
ns
73
27
VDS=30V, VGS=4.5V,
IDS=10A
Qg
Total Gate Charge
-
22
-
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
45
9
65
-
nC
VDS=30V, VGS=10V,
IDS=10A
8.5
-
Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note e：Guaranteed by design, not subject to production testing.
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - August, 2014
SM6128NSK
®
Typical Operating Characteristics
Power Dissipation
Drain Current
14
12
10
8
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
6
4
2
TA=25oC
0.0
TA=25oC,VG=10V
0
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
3
1
100
10
Duty = 0.5
0.2
0.1
300µs
0.05
0.1
0.01
1E-3
1ms
0.02
0.01
1
10ms
0.1
0.01
Single Pulse
100ms
1s
Mounted on 1in2 pad
TA=25oC
R
θJA : 35 oC/W
DC
10
0.01
0.1
1
100 300
1E-4 1E-3 0.01 0.1
1
10
100
VDS - Drain - Source Voltage (V)
Square Wave PulseDuration (sec)
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - August, 2014
SM6128NSK
®
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
24
20
16
12
8
50
40
30
20
10
0
VGS=4,5,6,7,8,9,10V
VGS=4.5V
3V
VGS=10V
2.8V
2.5V
4
0
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain - Source Voltage (V)
ID -Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
35
30
25
20
15
10
5
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IDS=10A
IDS =250µA
-50 -25
0
25 50 75 100 125 150
2
3
4
5
6
7
8
9
10
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - August, 2014
SM6128NSK
®
Typical Operating Characteristics (Cont.)
Source-Drain Diode Forward
Drain-Source On Resistance
50
10
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V
IDS = 10A
Tj=150oC
Tj=25oC
1
RON@Tj=25oC: 10mΩ
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
3600
3200
2800
2400
2000
1600
1200
800
10
Frequency=1MHz
VDS=30V
IDS=10A
9
8
7
6
5
4
3
2
1
0
Ciss
400
Coss
Crss
0
0
8
16
24
32
40
0
9
18
27
36
45
VDS -Drain-Source Voltage (V)
QG -Gate Charge (nC)
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - August, 2014
SM6128NSK
®
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
VDS
DUT
IAS
RG
VDD
VDD
EAS
IL
tp
0.01Ω
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - August, 2014
SM6128NSK
®
Package Information
SOP-8
-T- SEATING PLANE < 4 mils
SEE VIEW A
D
°
b
c
e
GAUGE PLANE
SEATING PLANE
L
VIEW A
SOP-8
S
Y
M
B
O
L
RECOMMENDED LAND PATTERN
MILLIMETERS
INCHES
1.27
MIN.
-
MAX.
1.75
0.25
-
MIN.
-
MAX.
A
0.069
0.010
-
0.004
0.049
0.012
0.007
A1
A2
b
0.10
1.25
0.31
0.17
2.2
0.020
0.010
0.51
0.25
5.00
6.20
4.00
c
D
5.74
4.80
5.80
3.80
0.189
0.228
0.150
0.197
0.244
0.157
E
E1
e
2.87
1.27 BSC
0.050 BSC
0.010
0.016
0.020
0.050
0.25
0.40
0.50
1.27
h
L
0.8
0.635
8
0
0
8
0
UNIT: mm
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
8
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - August, 2014
SM6128NSK
®
Carrier Tape & Reel Dimensions
P0
P2
P1
A
OD0
K0
A0
A
OD1
B
B
SECTION A-A
SECTION B-B
d
T1
Application
SOP-8
A
H
T1
C
d
D
W
E1
F
12.4+2.00 13.0+0.50
330.0±
2.00
50 MIN.
1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05
-0.00
-0.20
P0
P1
P2
D0
D1
T
A0
B0
K0
1.5+0.10
-0.00
0.6+0.00
-0.40
4.0 0.10 8.0 0.10 2.0 0.05
1.5 MIN.
6.40 0.20 5.20 0.20 2.10 0.20
±
±
±
±
±
±
(mm)
9
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - August, 2014
SM6128NSK
®
Taping Direction Information
SOP-8
USER DIRECTION OF FEED
Classification Profile
10
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - August, 2014
SM6128NSK
®
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
100 C
°
°
Temperature min (Tsmin
)
Temperature max (Tsmax
Time (Tsmin to Tsmax) (ts)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 C/second max.
°
6 C/second max.
°
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
Package
Volume mm3
Thickness
<350
≥350
<2.5 mm
235 °C
220 °C
220 °C
220 °C
≥2.5 mm
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Volume mm3
Volume mm3
Volume mm3
Thickness
<1.6 mm
<350
350-2000
260 °C
>2000
260 °C
245 °C
245 °C
260 °C
260 °C
250 °C
1.6 mm – 2.5 mm
≥2.5 mm
250 °C
245 °C
Reliability Test Program
Test item
Method
JESD-22, B102
JESD-22, A108
Description
SOLDERABILITY
HTRB
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
HTGB
JESD-22, A108
JESD-22, A102
JESD-22, A104
PCT
TCT
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - August, 2014
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