SM6A23NSF [SINOPWER]
N-Channel Enhancement Mode MOSFET;
| 型号： | SM6A23NSF |
| 厂家： | 
Sinopower Semiconductor Inc |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总11页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM6A23NSF/SM6A23NSFP/
SM6A23NSU/SM6A23NSUB
®
N-Channel Enhancement Mode MOSFET
Features
Applications
•
600V/6A,
• AC/DC Power Conversion in Switched Mode Power
Supplies (SMPS).
RDS(ON)= 0.86Ω(max.) @ VGS= 10V
V @Tj, max= 700V (typ.)
• Uninterruptible Power Supply (UPS),
DS
•
•
•
•
100% UIS + Rg Tested
Reliable and Rugged
Avalanche Rated
• Adapter.
Lead Free and GreenDevices Available
(RoHS Compliant)
D
Pin Description
G
D
S
S
D
G
S
S
D
D
G
S
G
G
N-ChannelMOSFET
TO-220
TO-220FP
TO-252-2
TO-251
Ordering and Marking Information
Package Code
SM6A23NS
F : TO-220 / FP : TO-220FP / U：TO-252-2 / UB：TO-251
Operating Junction Temperature Range
C : -55 to 150 oC
Assembly Material
Handling Code
Handling Code
TU : Tube (TO-220 / TO-220FP / TO-251)
TR : Tape & Reel (TO-252-2)
Assembly Material
Temperature Range
Package Code
G : Halogen and Lead Free Device
SM6A23NS F/FP/U/UB :
XXXXX - Lot Code
SM6A23NS
XXXXX
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2015
SM6A23NSF/SM6A23NSFP/
SM6A23NSU/SM6A23NSUB
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
Drain-Source Voltage
Gate-Source Voltage
600
±30
V
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulse Drain Current Tested
150
°C
°C
A
TSTG
IS
-55 to 150
6 a
IDP
TC=25°C
TC =25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
15 b
6 a
3.8 a
A
ID
Continuous Drain Current
A
86
Maximum Power Dissipation for
TO-220/TO-252-2/TO-251
PD
34.4
27
W
Maximum Power Dissipation for
TO-220FP
PD
10.8
Thermal Resistance-Junction to Case for
TO-220/TO-252-2/TO-251
1.45
RθJC
Thermal Resistance-Junction to Case for
TO-220FP
°C/W
4.6
RθJC
RθJA
Thermal Resistance-Junction to Ambient
62.5
Drain-Source Avalanche Ratings
dv/dt c MOSFET dv/dt ruggedness
50
65
V/ns
mJ
A
d
EAS
IAR
Avalanche Energy, Single Pulsed
Avalanche Current
e
1
e
EAR
Repetitive Avalanche Energy
0.15
mJ
Note a：limited by maximum junction temperature.
Note b：Bond wire current limit.
Note c：VDS=480V, ID=6A.
Note d：ID=1A, VDD=50V, Tj=25°C.
Note e：Repetitive Rating: Pulse width is limited by maximum junction temperature.
2
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2015
SM6A23NSF/SM6A23NSFP/
SM6A23NSU/SM6A23NSUB
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
600
-
-
-
VGS=0V, IDS=250µA
TJ=150°C
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
-
700
VDS=480V, VGS=0V
TJ=150°C
-
-
-
-
1
IDSS
µA
200
4.5
±100
VGS(th)
IGSS
Gate Threshold Voltage
2.5
-
3.5
-
V
nA
Ω
VDS=VGS, IDS=250µA
VGS=±30V, VDS=0V
VGS=10V, IDS=2A
Gate Leakage Current
f
RDS(ON)
Drain-Source On-state Resistance
-
0.75 0.86
Diode Characteristics
f
VSD
trr
Diode Forward Voltage
ISD=6A, VGS=0V
-
-
-
-
0.95
185
1.5
14
1.3
V
ns
µC
A
Reverse Recovery Time
-
-
-
ISD=6A, VR=360V
dlSD/dt=100A/µs
Qrr
Irm
Reverse Recovery Charge
Peak Reverse Recovery Current
Dynamic Characteristics g
VGS=0V,VDS=0V,
F=1MHz
RG
Gate Resistance
-
2.8
-
Ω
Ciss
Coss
Crss
td(ON)
Tr
Input Capacitance
-
-
-
-
-
-
-
370
385
6.5
10
5
480
VGS=0V,
VDS=25V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
-
-
-
-
-
-
pF
VDD=400V,
IDS=6A, VGEN=10V,
RG=6Ω
ns
td(OFF)
Turn-off Delay Time
15
3
Tf
Turn-off Fall Time
Gate Charge Characteristicsg
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
13.8
3.2
18
-
VDS=480V, VGS=10V,
IDS=2A
nC
6.3
-
Note f：Pulse test; pulse width≤300µs, duty cycle≤2%.
Note g：Guaranteed by design, not subject to production testing.
3
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2015
SM6A23NSF/SM6A23NSFP/
SM6A23NSU/SM6A23NSUB
®
Typical Operating Characteristics
Power Dissipation :
TO-220/TO-252-2/TO-251
Power Dissipation : TO-220FP
30
25
20
15
10
5
100
80
60
40
20
TC=25oC
TC=25oC
0
0
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area :
TO-220/TO-252-2/TO-251
Safe Operation Area : TO-220FP
100
10
100
10
100µs
300µs
1ms
1
1
100µs
300µs
1ms
0.1
0.01
0.1
0.01
10ms
DC
10ms
TC=25OC
TC=25OC
DC
1
10
100
1000 3000
1
10
100
1000 3000
VDS - Drain - Source Voltage (V)
VDS - Drain - Source Voltage (V)
4
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2015
SM6A23NSF/SM6A23NSFP/
SM6A23NSU/SM6A23NSUB
®
Typical Operating Characteristics (Cont.)
Thermal Transient Impedance:
TO-220FP
Thermal Transient Impedance:
TO-220/TO-252-2/TO-251
3
1
3
1
Duty = 0.5
Duty = 0.5
0.2
0.2
0.1
0.1
0.05
0.1
0.01
1E-3
1E-4
0.1
0.01
1E-3
1E-4
0.05
0.02
0.01
0.02
0.01
Single Pulse
Single Pulse
R
θJC :1.45oC/W
R
θJC :4.6oC/W
1E-6 1E-5 1E-4 1E-3 0.01 0.1
1
1E-6 1E-5 1E-4 1E-3 0.01 0.1
1
Square Wave PulseDuration (sec)
Square Wave PulseDuration (sec)
Output Characteristics
Drain Current
8
12
7
6
5
4
3
2
1
VGS=8, 10,15V
10
8
7V
6
6V
4
2
0
TC=25oC,VG=10V
0
0
20 40 60 80 100 120 140 160
0
5
10
15
20
VDS - Drain - Source Voltage (V)
Tj - Junction Temperature (°C)
5
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2015
SM6A23NSF/SM6A23NSFP/
SM6A23NSU/SM6A23NSUB
®
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
100
10
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V
IDS = 2A
Tj=150oC
Tj=25oC
RON@Tj=25oC: 0.75Ω
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10000
1000
100
10
10
Frequency=1MHz
VDS=480V
IDS=2A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
1
0
5
10 15 20 25 30 35 40
0
4
8
12
16
VDS - Drain - Source Voltage (V)
QG -Gate Charge (nC)
6
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2015
SM6A23NSF/SM6A23NSFP/
SM6A23NSU/SM6A23NSUB
®
Typical Operating Characteristics (Cont.)
BVDSS vs Junction Temperature
Drain-Source On Resistance
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
IDS=250µA
VGS=10V
0
2
4
6
8
-50 -25
0
25 50 75 100 125 150
VSD - Source - Drain Voltage (V)
ID -Drain Current (A)
VGS(th) vs Junction Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
IDS=250µA
-50 -25
0
25 50 75 100 125 150
VGS - Gate-Source Voltage (V)
7
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2015
SM6A23NSF/SM6A23NSFP/
SM6A23NSU/SM6A23NSUB
®
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01Ω
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
8
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2015
SM6A23NSF/SM6A23NSFP/
SM6A23NSU/SM6A23NSUB
®
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making
great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2015
SM6A23NSF/SM6A23NSFP/
SM6A23NSU/SM6A23NSUB
®
Classification Profile
10
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2015
SM6A23NSF/SM6A23NSFP/
SM6A23NSU/SM6A23NSUB
®
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
100 C
°
°
Temperature min (Tsmin
)
Temperature max (Tsmax
Time (Tsmin to Tsmax) (ts)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 C/second max.
°
6 C/second max.
°
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
350
Package
Volume mm3
<350
Thickness
≥
<2.5 mm
235 C
220 C
°
°
2.5 mm
≥
220 C
220 C
°
°
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
Volume mm3
Volume mm3
<350
350-2000
260 °C
>2000
260 °C
245 °C
245 °C
260 °C
260 °C
250 °C
1.6 mm – 2.5 mm
≥2.5 mm
250 °C
245 °C
Reliability Test Program
Test item
Method
JESD-22, B102
JESD-22, A108
Description
SOLDERABILITY
HTRB
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
HTGB
JESD-22, A108
JESD-22, A102
JESD-22, A104
PCT
TCT
Customer Service
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5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2015
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