SM6F27NSFC-TUG [SINOPWER]
N-Channel Enhancement Mode MOSFET;型号: | SM6F27NSFC-TUG |
厂家: | Sinopower Semiconductor Inc |
描述: | N-Channel Enhancement Mode MOSFET |
文件: | 总11页 (文件大小:256K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SM6F27NSF/SM6F27NSFP
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
650V/20A,
RDS(ON)= 0.18Ω(max.) @ VGS= 10V
V @Tj, max=750V (typ.)
S
S
DS
D
D
G
G
•
•
•
Reliable and Rugged
Avalanche Rated
Top View of TO-220FP
Top View of TO-220
Lead Free and GreenDevices Available
(RoHS Compliant)
D
•
100% UIS + Rg Tested
Applications
G
• AC/DC Power Conversion in Switched Mode Power
Supplies (SMPS).
• Uninterruptible Power Supply (UPS),
S
• Adapter.
N-ChannelMOSFET
Ordering and Marking Information
Package Code
F : TO-220
SM6F27NS
FP : TO-220FP
Assembly Material
Handling Code
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
Temperature Range
Package Code
TU : Tube
Assembly Material
G : Halogen and Lead Free Device
SM6F27NS F/FP :
XXXXX - Lot Code
SM6F27NS
XXXXX
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - April, 2018
SM6F27NSF/SM6F27NSFP
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
Drain-Source Voltage
Gate-Source Voltage
650
±30
V
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulse Drain Current Tested
150
°C
°C
A
TSTG
IS
-55 to 150
20 a
80 a
20 a
12.7 a
b
IDP
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
A
ID
Continuous Drain Current
A
192
Maximum Power Dissipation for
TO-220
PD
76.9
W
34.7
Maximum Power Dissipation for
TO-220FP
PD
13.9
Thermal Resistance-Junction to Case for
TO-220
0.65
RθJC
Thermal Resistance-Junction to Case for
TO-220FP
°C/W
3.6
RθJC
RθJA
Thermal Resistance-Junction to Ambient
62.5
Drain-Source Avalanche Ratings
dv/dt c
MOSFET dv/dt ruggedness
50
291
2.7
V/ns
mJ
A
d
Avalanche Energy, Single Pulsed
Avalanche Current
EAS
e
IAR
e
Repetitive Avalanche Energy
0.69
mJ
EAR
Note a:Limited by maximum junction temperature.
Note b:Pulse width limited by safe operating area.
Note c:VDS=520V, ID=18A.
Note d:ID=2.7A, VDD=50V, Tj=25°C.
Note e:Repetitive Rating : Pulse width limited by maximum junction temperature.
2
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - April, 2018
SM6F27NSF/SM6F27NSFP
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
650
-
750
-
-
-
VGS=0V, IDS=250µA
TJ=150°C
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
-
VDS=520V, VGS=0V
TJ=150°C
-
-
1
IDSS
µA
-
200
4.5
±100
VGS(th)
IGSS
Gate Threshold Voltage
2.5
-
3.5
-
V
nA
Ω
VDS=VGS, IDS=250µA
VGS=±30V, VDS=0V
VGS=10V, IDS=8A
Gate Leakage Current
f
RDS(ON)
Drain-Source On-state Resistance
-
0.15 0.18
Diode Characteristics
f
VSD
trr
Diode Forward Voltage
ISD=20A, VGS=0V
-
-
-
-
0.94
345
4.8
1.3
V
ns
µC
A
Reverse Recovery Time
-
-
-
ISD=20A, VR=390V
dlSD/dt=100A/µs
Qrr
Irm
Reverse Recovery Charge
Peak Reverse Recovery Current
27
Dynamic Characteristics g
VGS=0V,VDS=0V,
F=1MHz
RG
Gate Resistance
-
2.3
-
Ω
Ciss
Coss
Crss
td(ON)
Tr
Input Capacitance
-
-
-
-
-
-
-
1810 2350
VGS=0V,
VDS=25V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
1350
41
-
-
-
-
-
-
pF
19
VDD=400V,
RL=22.2Ω,
IDS=20A, VGEN=10V,
RG=6Ω
39
ns
td(OFF)
Turn-off Delay Time
47
Tf
Turn-off Fall Time
28
Gate Charge Characteristics g
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
49
9.5
22
64
-
VDS=520V, VGS=10V,
IDS=8A
nC
-
Note f:Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note g:Guaranteed by design, not subject to production testing.
3
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - April, 2018
SM6F27NSF/SM6F27NSFP
®
Typical Operating Characteristics
Power Dissipation : TO-220
Power Dissipation : TO-220FP
210
40
35
30
25
20
15
10
5
180
150
120
90
60
30
TC=25oC
0
TC=25oC
20 40 60 80 100 120 140 160
0
0
20 40 60 80 100 120 140 160
0
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area : TO-220
Safe Operation Area : TO-220FP
300
100
300
100
10
1
300µs
1ms
10
1
1ms
10ms
10ms
100ms
100ms
1s
1s
0.1
0.01
DC
DC
TC=25OC
TC=25OC
0.1
1
10
100
1000 3000
1
10
100
1000 3000
VDS - Drain - Source Voltage (V)
VDS - Drain - Source Voltage (V)
4
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - April, 2018
SM6F27NSF/SM6F27NSFP
®
Typical Operating Characteristics (Cont.)
Thermal Transient Impedance:
TO-220FP
Thermal Transient Impedance:
TO-220
4
1
4
1
Duty = 0.5
Duty = 0.5
0.2
0.2
0.1
0.1
0.05
0.1
0.01
1E-3
0.05
0.1
0.01
1E-3
0.02
0.01
0.02
0.01
Single Pulse
Single Pulse
Mounted on minimum pad
Mounted on minimum pad
θJA :62.5oC/W
R
θJA :62.5oC/W
R
1E-4
1E-3
0.01
0.1
1
10
1E-4
1E-3
0.01
0.1
1
10
Square Wave PulseDuration (sec)
Square Wave PulseDuration (sec)
Output Characteristics
Drain Current
24
20
16
12
8
70
60
50
40
30
20
10
0
VGS=8,10,15V
7V
6V
4
TC=25oC,VG=10V
0
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
0
5
10
15
20
VDS - Drain - Source Voltage (V)
5
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - April, 2018
SM6F27NSF/SM6F27NSFP
®
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
VGS = 10V
IDS = 8A
Tj=150oC
Tj=25oC
RON@Tj=25oC: 0.15Ω
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-50 -25
0
25 50 75 100 125 150
VSD - Source - Drain Voltage (V)
Tj - Junction Temperature (°C)
Capacitance
Gate Charge
10000
1000
100
10
10
Frequency=1MHz
Ciss
VDS=520V
IDS=8A
9
8
7
6
5
4
3
2
1
0
Coss
Crss
1
0
5
10 15 20 25 30 35 40
0
10
20
30
40
50
VDS - Drain - Source Voltage (V)
QG -Gate Charge (nC)
6
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - April, 2018
SM6F27NSF/SM6F27NSFP
®
Typical Operating Characteristics (Cont.)
BVDSS vs Junction Temperature
Drain-Source On Resistance
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.30
0.25
0.20
0.15
0.10
0.05
0.00
IDS=250µA
VGS=10V
-50 -25
0
25 50 75 100 125 150
0
10
20
30
40
Tj - Junction Temperature (°C)
ID -Drain Current (A)
Gate Threshold Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
IDS=250µA
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
7
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - April, 2018
SM6F27NSF/SM6F27NSFP
®
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01Ω
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
8
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - April, 2018
SM6F27NSF/SM6F27NSFP
®
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making
great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - April, 2018
SM6F27NSF/SM6F27NSFP
®
Classification Profile
10
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - April, 2018
SM6F27NSF/SM6F27NSFP
®
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
100 C
°
°
Temperature min (Tsmin
)
Temperature max (Tsmax
Time (Tsmin to Tsmax) (ts)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 C/second max.
°
6 C/second max.
°
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
350
Package
Volume mm3
<350
Thickness
≥
<2.5 mm
235 C
220 C
°
°
2.5 mm
≥
220 C
220 C
°
°
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
Volume mm3
Volume mm3
<350
350-2000
260 °C
>2000
260 °C
245 °C
245 °C
260 °C
260 °C
250 °C
1.6 mm – 2.5 mm
≥2.5 mm
250 °C
245 °C
Reliability Test Program
Test item
Method
JESD-22, B102
JESD-22, A108
Description
SOLDERABILITY
HTRB
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
HTGB
JESD-22, A108
JESD-22, A102
JESD-22, A104
PCT
TCT
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
11
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - April, 2018
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