SM7A23NSU [SINOPWER]
N-Channel Enhancement Mode MOSFET;
| 型号： | SM7A23NSU |
| 厂家： | 
Sinopower Semiconductor Inc |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总12页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM7A23NSF/SM7A23NSFP/SM7A23NSU/
SM7A23NSUB/SM7A23NSUD/SM7A23NSVA
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
700V/5.5A,
RDS(ON)= 1.1Ω(max.) @ VGS= 10V
V @Tj, max=800V (typ.)
DS
S
•
•
•
•
100% UIS + Rg Tested
Reliable and Rugged
Avalanche Rated
S
D
D
G
G
TO-220
TO-220FP
Lead Free and GreenDevices Available
(RoHS Compliant)
D
S
S
D
G
G
Applications
TO-252-2
TO-251
• AC/DC Power Conversion in Switched Mode Power
Supplies (SMPS).
• Uninterruptible Power Supply (UPS),
S
S
D
D
• Adapter.
G
G
TO-251T
SOT-223-2
Ordering and Marking Information
D
Package Code
SM7A23NS
F : TO-220/FP : TO-220FP/U：TO-252-2/
UB：TO-251/UD：TO-251T/VA：SOT-223-2
Operating Junction Temperature Range
C : -55 to 150 oC
Assembly Material
Handling Code
Handling Code
TU : Tube (TO-220/TO-220FP/TO-251)
G
Temperature Range
Package Code
TR : Tape & Reel (TO-252-2/TO-251T/SOT-223-2)
Assembly Material
G : Halogen and Lead Free Device
SM7A23NS
F/FP/U/UB/UD :
7A23N
S
SM7A23NS VA :
XXXXX - Lot Code
XXXXX
SM7A23NS
XXXXX
N-Channel MOSFET
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - June, 2017
SM7A23NSF/SM7A23NSFP/SM7A23NSU/
SM7A23NSUB/SM7A23NSUD/SM7A23NSVA
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
Drain-Source Voltage
Gate-Source Voltage
700
±30
V
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulse Drain Current Tested
150
°C
TSTG
IS
-55 to 150
5.5 a
13.5 b
5.5 a
3.5 a
89
IDP
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TL=25°C
TL=100°C
A
ID
Continuous Drain Current
Maximum Power Dissipation for
TO-220/TO-252-2/TO-251
PD
PD
35.7
27
Maximum Power Dissipation for TO-220FP
Maximum Power Dissipation for SOT-223-2
W
10.8
5.6
PD
2.2
Thermal Resistance-Junction to Case for
TO-220/TO-252-2/TO-251/TO-251T
1.4
RθJC
Thermal Resistance-Junction to Case for TO-220FP
Thermal Resistance-Junction to Lead for SOT-223-2
Thermal Resistance-Junction to Ambient
4.6
22
RθJC
RθJL
RθJA
RθJA
°C/W
62.5
70
Thermal Resistance-Junction to Ambient for SOT-223-2
Drain-Source Avalanche Ratings
dv/dt c MOSFET dv/dt ruggedness
50
41.6
0.8
V/ns
mJ
A
d
EAS
IAR
Avalanche Energy, Single Pulsed
Avalanche Current
e
e
EAR
Repetitive Avalanche Energy
0.1
mJ
Note a：TO-220 equivalent limited by maximum junction temperature.
Note b：Bond wire current limit.
Note c：VDS=560V, ID=5.5A.
Note d：ID=0.8A, VDD=50V, Tj=25°C.
Note e：Repetitive Rating : Pulse width limited by maximum junction temperature.
2
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - June, 2017
SM7A23NSF/SM7A23NSFP/SM7A23NSU/
SM7A23NSUB/SM7A23NSUD/SM7A23NSVA
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
700
-
800
-
-
-
VGS=0V, IDS=250µA
TJ =150°C
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
-
VDS=560V, VGS=0V
TJ=150°C
-
-
1
IDSS
µA
-
200
4.5
±100
1.1
VGS(th)
IGSS
Gate Threshold Voltage
2.5
-
3.5
-
V
nA
Ω
VDS=VGS, IDS=250µA
VGS=±30V, VDS=0V
VGS=10V, IDS=2A
Gate Leakage Current
f
RDS(ON)
Drain-Source On-state Resistance
-
0.95
Diode Characteristics
f
VSD
trr
Diode Forward Voltage
ISD =5.5A, VGS=0V
-
-
-
-
0.95
176
1.3
V
ns
µC
A
Reverse Recovery Time
-
-
-
ISD =5.5A, VR=420V
dlSD/dt=100A/µs
Qrr
Ir m
Reverse Recovery Charge
Peak Reverse Recovery Current
1.37
13.9
Dynamic Characteristics g
VGS=0V,VDS=0V,
F=1MHz
RG
Gate Resistance
-
2.7
-
Ω
Ciss
Coss
Crss
td(ON)
Tr
Input Capacitance
-
-
-
-
-
-
-
330
160
5
430
VGS=0V,
VDS=25V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
-
-
-
-
-
-
pF
10
VDD=400V,
IDS=5.5A, VGEN=10V,
RG=6Ω
4.5
14.5
2.5
ns
td(OFF)
Turn-off Delay Time
Tf
Turn-off Fall Time
Gate Charge Characteristics g
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
14.3 18.6
VDS=560V, VGS=10V,
IDS=2A
2.9
7
-
-
nC
Note f：Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note g ：Guaranteed by design, not subject to production testing.
3
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - June, 2017
SM7A23NSF/SM7A23NSFP/SM7A23NSU/
SM7A23NSUB/SM7A23NSUD/SM7A23NSVA
®
Typical Operating Characteristics
Power Dissipation :
TO-220/TO-252-2/TO-251/TO-251T
Power Dissipation : TO-220FP
100
80
60
40
20
0
30
25
20
15
10
5
TC=25oC
20 40 60 80 100 120 140 160
TC=25oC
20 40 60 80 100 120 140 160
0
0
0
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Output Characteristics
Power Dissipation : SOT-223
6
5
4
3
2
1
0
10
8
VGS=8V, 10,15V
7V
6
4
6V
2
TL=25oC
0
0
20 40 60 80 100 120 140 160
0
5
10
15
20
Tj - Junction Temperature (°C)
VDS - Drain - Source Voltage (V)
4
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - June, 2017
SM7A23NSF/SM7A23NSFP/SM7A23NSU/
SM7A23NSUB/SM7A23NSUD/SM7A23NSVA
®
Typical Operating Characteristics (Cont.)
Thermal Transient Impedance:
TO-220FP
Thermal Transient Impedance:
TO-220/TO-252-2/TO-251/TO-251T
3
1
3
1
Duty = 0.5
Duty = 0.5
0.2
0.2
0.1
0.1
0.05
0.1
0.01
1E-3
1E-4
0.1
0.01
1E-3
1E-4
0.05
0.02
0.01
0.02
0.01
Single Pulse
Single Pulse
θJC :1.4oC/W
R
θJC :4.6oC/W
R
1E-6 1E-5 1E-4 1E-3 0.01 0.1
1
1E-6 1E-5 1E-4 1E-3 0.01 0.1
1
Square Wave PulseDuration (sec)
Square Wave PulseDuration (sec)
Thermal Transient Impedance:
SOT-223-2
Thermal Transient Impedance:
SOT-223-2
2
3
Duty = 0.5
Duty = 0.5
1
1
0.2
0.1
0.2
0.1
0.1
0.05
0.05
0.02
0.1
0.02
0.01
0.01
1E-3
1E-4
1E-5
0.01
0.01
Single Pulse
Single Pulse
Mounted on 1in2 pad
θJA : 70oC/W
θJL :22oC/W
10
R
R
1E-3
1E-4 1E-3 0.01 0.1
1
10 100 1000
1E-6 1E-5 1E-4 1E-3 0.01 0.1
1
Square Wave PulseDuration (sec)
Square Wave PulseDuration (sec)
5
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - June, 2017
SM7A23NSF/SM7A23NSFP/SM7A23NSU/
SM7A23NSUB/SM7A23NSUD/SM7A23NSVA
®
Typical Operating Characteristics
Safe Operation Area :
Safe Operation Area : TO-220FP
TO-220/TO-252-2/TO-251/TO-251T
100
10
100
10
100µs
1
1
100µs
300µs
1ms
300µs
1ms
0.1
0.01
0.1
0.01
10ms
DC
10ms
TC=25OC
TC=25OC
DC
1
10
100
1000 3000
1
10
100
1000 3000
VDS - Drain - Source Voltage (V)
VDS - Drain - Source Voltage (V)
VGS(th) vs Junction Temperature
Drain Current
8
1.2
IDS=250µA
7
6
5
4
3
2
1
0
1.1
1.0
0.9
0.8
0.7
0.6
TC=25oC,VG=10V
-50 -25
0
25 50 75 100 125 150
0
20 40 60 80 100 120 140 160
VGS - Gate-Source Voltage (V)
Tj - Junction Temperature (°C)
6
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - June, 2017
SM7A23NSF/SM7A23NSFP/SM7A23NSU/
SM7A23NSUB/SM7A23NSUD/SM7A23NSVA
®
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
100
10
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V
IDS = 2A
Tj=150oC
Tj=25oC
RON@Tj=25oC: 0.95Ω
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10000
1000
100
10
10
Frequency=1MHz
VDS=560V
IDS=2A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
1
0
5
10 15 20 25 30 35 40
0
4
8
12
16
VDS - Drain - Source Voltage (V)
QG -Gate Charge (nC)
7
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - June, 2017
SM7A23NSF/SM7A23NSFP/SM7A23NSU/
SM7A23NSUB/SM7A23NSUD/SM7A23NSVA
®
Typical Operating Characteristics (Cont.)
BVDSS vs Junction Temperature
Drain-Source On Resistance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
IDS=250µA
VGS=10V
0
1
2
3
4
5
6
7
-50 -25
0
25 50 75 100 125 150
VSD - Source - Drain Voltage (V)
ID -Drain Current (A)
8
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - June, 2017
SM7A23NSF/SM7A23NSFP/SM7A23NSU/
SM7A23NSUB/SM7A23NSUD/SM7A23NSVA
®
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01Ω
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
9
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - June, 2017
SM7A23NSF/SM7A23NSFP/SM7A23NSU/
SM7A23NSUB/SM7A23NSUD/SM7A23NSVA
®
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making
great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
10
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - June, 2017
SM7A23NSF/SM7A23NSFP/SM7A23NSU/
SM7A23NSUB/SM7A23NSUD/SM7A23NSVA
®
Classification Profile
11
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - June, 2017
SM7A23NSF/SM7A23NSFP/SM7A23NSU/
SM7A23NSUB/SM7A23NSUD/SM7A23NSVA
®
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
100 C
°
°
Temperature min (Tsmin
)
Temperature max (Tsmax
Time (Tsmin to Tsmax) (ts)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 C/second max.
°
6 C/second max.
°
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
350
Package
Volume mm3
<350
Thickness
≥
<2.5 mm
235 C
220 C
°
°
2.5 mm
≥
220 C
220 C
°
°
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
Volume mm3
Volume mm3
<350
350-2000
260 °C
>2000
260 °C
245 °C
245 °C
260 °C
260 °C
250 °C
1.6 mm – 2.5 mm
≥2.5 mm
250 °C
245 °C
Reliability Test Program
Test item
Method
JESD-22, B102
JESD-22, A108
Description
SOLDERABILITY
HTRB
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
HTGB
JESD-22, A108
JESD-22, A102
JESD-22, A104
PCT
TCT
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
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Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - June, 2017
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