SM7A25NSFP [SINOPWER]

N-Channel Enhancement Mode MOSFET;


型号：	SM7A25NSFP
厂家：	Sinopower Semiconductor Inc
描述：	N-Channel Enhancement Mode MOSFET
文件：	总11页 (文件大小：303K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SM7A25NSF/SM7A25NSFP/

SM7A25NSU/SM7A25NSUB

N-Channel Enhancement Mode MOSFET

Features

Applications

• AC/DC Power Conversion in Switched Mode Power

Supplies (SMPS).

•

700V/10A,

R_DS(ON)= 0.49Ω(max.) @ V_GS= 10V

V @Tj, max=800V (typ.)

• Uninterruptible Power Supply (UPS),

•

Reliable and Rugged

Avalanche Rated

• Adapter.

Lead Free and GreenDevices Available

(RoHS Compliant)

•

100% UIS + R_gTested

Pin Description

TO-220

N-ChannelMOSFET

TO-220FP

TO-252-2

TO-251

Ordering and Marking Information

Package Code

SM7A25NS

F : TO-220 / FP : TO-220FP / U：TO-252-2 / UB：TO-251

Operating Junction Temperature Range

C : -55 to 150 ^oC

Assembly Material

Handling Code

TU : Tube (TO-220 / TO-220FP / TO-251)

TR : Tape & Reel (TO-252-2)

Assembly Material

Temperature Range

Package Code

G : Halogen and Lead Free Device

SM7A25NS F/FP/U/UB :

XXXXX - Lot Code

SM7A25NS

XXXXX

Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate

termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free

requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER

defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in

homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and

advise customers to obtain the latest version of relevant information to verify before placing orders.

www.sinopowersemi.com

Rev. A.1 - December, 2015

SM7A25NSF/SM7A25NSFP/

SM7A25NSU/SM7A25NSUB

Absolute Maximum Ratings (T_A= 25°C Unless Otherwise Noted)

Symbol

Parameter

Rating

Unit

Common Ratings

V_DSS

V_GSS

T_J

Drain-Source Voltage

Gate-Source Voltage

700

±30

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

Pulse Drain Current Tested

150

°C

T_STG

I_S

-55 to 150

8 ^a

I_DP

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

30 ^a

10 ^a

6.3 ^a

I_D

Continuous Drain Current

125

Maximum Power Dissipation for

TO-220/TO-252-2/TO-251

P_D

31.2

12.5

Maximum Power Dissipation for

TO-220FP

P_D

Thermal Resistance-Junction to Case for

TO-220/TO-252-2/TO-251

R_θJC

Thermal Resistance-Junction to Case for

TO-220FP

°C/W

R_θJC

R_θJA

Thermal Resistance-Junction to Ambient

62.5

Drain-Source Avalanche Ratings

dv/dt ^cMOSFET dv/dt ruggedness

100

1.6

V/ns

E_AS

I_AR

Avalanche Energy, Single Pulsed

Avalanche Current

E_AR

Repetitive Avalanche Energy

0.24

Note a：limited by maximum junction temperature.

Note b：Pulse width limited by safe operating area.

Note c：V_DS=560V, I_D=10A.

Note d：I_D=1.6A, V_DD=50V, T_j=25°C.

Note e：Repetitive Rating : Pulse width limited by maximum junction temperature.

www.sinopowersemi.com

Rev. A.1 - December, 2015

SM7A25NSF/SM7A25NSFP/

SM7A25NSU/SM7A25NSUB

Electrical Characteristics (T_A= 25°C Unless Otherwise Noted)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

Static Characteristics

700

800

V_GS=0V, I_DS=250µA

T_J=150°C

BV_DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

V_DS=560V, V_GS=0V

T_J=150°C

I_DSS

µA

2.5

200

4.5

±100

V_GS(th)

I_GSS

Gate Threshold Voltage

3.5

Ω

V_DS=V_GS, I_DS=250µA

V_GS=±30V, V_DS=0V

V_GS=10V, I_DS=4A

Gate Leakage Current

R_DS(ON)

Drain-Source On-state Resistance

0.43 0.49

Diode Characteristics

V_SD

t_rr

Diode Forward Voltage

I_SD=10A, V_GS=0V

0.94

230

2.1

1.3

µC

Reverse Recovery Time

I_SD=10A, V_R=420V

dl_SD/dt=100A/µs

Q_rr

I_rm

Reverse Recovery Charge

Peak Reverse Recovery Current

17.5

Dynamic Characteristics ^g

V_GS=0V,V_DS=0V,

F=1MHz

R_G

Gate Resistance

2.1

Ω

C_iss

C_oss

C_rss

t_d(ON)

T_r

Input Capacitance

805 1040

V_GS=0V,

V_DS=25V,

Frequency=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Turn-on Rise Time

295

V_DD=400V, R_L=40Ω,

I_DS=10A, V_GEN=10V,

R_G=6Ω

t_d(OFF)

Turn-off Delay Time

T_f

Turn-off Fall Time

Gate Charge Characteristics ^g

Q_g

Q_gs

Q_gd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

5.2

V_DS=560V, V_GS=10V,

I_DS=4A

10.5

Note f：Pulse test ; pulse width≤300µs, duty cycle≤2%.

Note g：Guaranteed by design, not subject to production testing.

www.sinopowersemi.com

Rev. A.1 - December, 2015

SM7A25NSF/SM7A25NSFP/

SM7A25NSU/SM7A25NSUB

Typical Operating Characteristics

Power Dissipation :

TO-220/TO-252-2/TO-251

Power Dissipation : TO-220FP

150

125

100

T_C=25^oC

20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C)

Safe Operation Area :

TO-220/TO-252-2/TO-251

Safe Operation Area : TO-220FP

300

100

300

100

1ms

300µs

10ms

1ms

100ms

10ms

100ms

0.1

0.01

0.1

0.01

T_C=25^OC

100

1000 3000

100

1000 3000

VDS - Drain - Source Voltage (V)

www.sinopowersemi.com

Rev. A.1 - December, 2015

SM7A25NSF/SM7A25NSFP/

SM7A25NSU/SM7A25NSUB

Typical Operating Characteristics (Cont.)

Thermal Transient Impedance:

TO-220FP

Thermal Transient Impedance:

TO-220/TO-252-2/TO-251

Duty = 0.5

0.2

0.1

0.05

0.1

0.01

1E-3

0.1

0.01

1E-3

0.02

0.01

0.02

0.01

Single Pulse

Mounted on minimum pad

_θJA:62.5^oC/W

1E-4

1E-3

0.01

0.1

1E-4

1E-3

0.01

0.1

Square Wave PulseDuration (sec)

Output Characteristics

Drain Current

V_GS=8,10,15V

T =25^oC,V =10V

20 40 60 80 100 120 140 160

VDS - Drain - Source Voltage (V)

Tj - Junction Temperature (°C)

www.sinopowersemi.com

Rev. A.1 - December, 2015

SM7A25NSF/SM7A25NSFP/

SM7A25NSU/SM7A25NSUB

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance

Source-Drain Diode Forward

100

3.0

2.5

2.0

1.5

1.0

0.5

0.0

V_GS= 10V

I_DS= 4A

T_j=150^oC

T_j=25^oC

R_ON@T_j=25^oC: 0.43Ω

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

-50 -25

25 50 75 100 125 150

VSD - Source - Drain Voltage (V)

Tj - Junction Temperature (°C)

Capacitance

Gate Charge

10000

1000

100

Frequency=1MHz

V_DS=560V

I_DS=4A

Ciss

Coss

Crss

10 15 20 25 30 35 40

VDS - Drain - Source Voltage (V)

QG -Gate Charge (nC)

www.sinopowersemi.com

Rev. A.1 - December, 2015

SM7A25NSF/SM7A25NSFP/

SM7A25NSU/SM7A25NSUB

Typical Operating Characteristics (Cont.)

BVDSS vs Junction Temperature

Drain-Source On Resistance

1.6

1.4

1.2

1.0

0.8

0.6

0.4

1.0

0.8

0.6

0.4

0.2

0.0

I_DS=250µA

V_GS=10V

-50 -25

25 50 75 100 125 150

Tj - Junction Temperature (°C)

ID -Drain Current (A)

Gate Threshold Voltage

1.2

1.1

1.0

0.9

0.8

0.7

0.6

I_DS=250µA

-50 -25

25 50 75 100 125 150

Tj - Junction Temperature (°C)

www.sinopowersemi.com

Rev. A.1 - December, 2015

SM7A25NSF/SM7A25NSFP/

SM7A25NSU/SM7A25NSUB

Avalanche Test Circuit and Waveforms

VDS

VDSX(SUS)

DUT

VDS

IAS

VDD

EAS

0.01Ω

tAV

Switching Time Test Circuit and Waveforms

VDS

90%

DUT

VGS

VDD

10%

VGS

td(on) tr

td(off) tf

www.sinopowersemi.com

Rev. A.1 - December, 2015

SM7A25NSF/SM7A25NSFP/

SM7A25NSU/SM7A25NSUB

Disclaimer

Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making

great efforts to development high quality and better performance products to

satisfy all customers’ needs. However, a product may fail to meet customer’s

expectation or malfunction for various situations.

All information which is shown in the datasheet is based on Sinopower’s

research and development result, therefore, Sinopower shall reserve the right

to adjust the content and monitor the production.

In order to unify the quality and performance, Sinopower has been following

JEDEC while defines assembly rule. Notwithstanding all the suppliers

basically follow the rule for each product, different processes may cause

slightly different results.

The technical information specified herein is intended only to show the typical

functions of and examples of application circuits for the products. Sinopower

does not grant customers explicitly or implicitly, any license to use or exercise

intellectual property or other rights held by Sinopower and other parties.

Sinopower shall bear no responsible whatsoever for any dispute arising from

the use of such technical information.

The products are not designed or manufactured to be used with any

equipment, device or system which requires an extremely high level of

reliability, such as the failure or malfunction of which any may result in a direct

threat to human life or a risk of human injury. Sinopower shall bear no

responsibility in any way for use of any of the products for the above special

purposes. If a product is intended to use for any such special purpose, such

as vehicle, military, or medical controller relevant applications, please contact

Sinopower sales representative before purchasing.

www.sinopowersemi.com

Rev. A.1 - December, 2015

SM7A25NSF/SM7A25NSFP/

SM7A25NSU/SM7A25NSUB

Classification Profile

www.sinopowersemi.com

Rev. A.1 - December, 2015

SM7A25NSF/SM7A25NSFP/

SM7A25NSU/SM7A25NSUB

Classification Reflow Profiles

Profile Feature

Preheat & Soak

Sn-Pb Eutectic Assembly

Pb-Free Assembly

150 C

100 C

Temperature min (T_smin

)

Temperature max (T_smax

Time (T_sminto T_smax) (t_s)

150 C

200 C

)

60-120 seconds

Average ramp-up rate

(T_smaxto T_P)

3 C/second max.

Liquidous temperature (T_L)

Time at liquidous (t_L)

183 C

60-150 seconds

217 C

60-150 seconds

Peak package body Temperature

(T_p)*

See Classification Temp in table 1

See Classification Temp in table 2

30** seconds

Time (t )** within 5 C of the specified

20** seconds

classification temperature (T_c)

Average ramp-down rate (T_pto T_smax

)

6 C/second max.

6 minutes max.

8 minutes max.

Time 25 C to peak temperature

* Tolerance for peak profile Temperature (T_p) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (t_p) is defined as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

Volume mm³

350

Package

Volume mm³

<350

Thickness

≥

<2.5 mm

235 C

220 C

2.5 mm

≥

220 C

Table 2. Pb-free Process – Classification Temperatures (Tc)

Package

Thickness

<1.6 mm

Volume mm³

<350

350-2000

260 °C

>2000

260 °C

245 °C

260 °C

250 °C

1.6 mm – 2.5 mm

≥2.5 mm

250 °C

245 °C

Reliability Test Program

Test item

Method

JESD-22, B102

JESD-22, A108

Description

SOLDERABILITY

HTRB

5 Sec, 245°C

1000 Hrs, 80% of VDS max @ Tjmax

1000 Hrs, 100% of VGS max @ Tjmax

168 Hrs, 100%RH, 2atm, 121°C

500 Cycles, -65°C~150°C

HTGB

JESD-22, A108

JESD-22, A102

JESD-22, A104

PCT

TCT

Customer Service

Sinopower Semiconductor, Inc.

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,

Hsinchu, 30078, Taiwan

TEL: 886-3-5635818 Fax: 886-3-5635080

www.sinopowersemi.com

Rev. A.1 - December, 2015

SM7A25NSFP [SINOPWER]

相关型号：

SM7A25NSFPC-TUG

SM7A25NSU

SM7A25NSUB

SM7A25NSUBC-TUG

SM7A25NSUC-TRG

SM7_13

SM8

SM8-24

SM8-24-RTC

SM8-24-TC

SM8.2

SM8.2A