SM8A03NSFPC-TUG [SINOPWER]
N-Channel Enhancement Mode MOSFET;
| 型号： | SM8A03NSFPC-TUG |
| 厂家： | 
Sinopower Semiconductor Inc |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总11页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
SM8A03NSF/SM8A03NSFP/SM8A03NSW
N-Channel Enhancement Mode MOSFET
Features
Pin Description
·
800V/8A,
RDS(ON)= 0.78W(max.) @ VGS= 10V
V @Tj, max=930V (typ.)
DS
S
S
D
D
·
·
·
Reliable and Rugged
Avalanche Rated
G
G
TO-220FP
TO-220
Lead Free and GreenDevices Available
(RoHS Compliant)
D
·
100% UIS + Rg Tested
Applications
G
· AC/DC Power Conversion in Switched Mode Power
Supplies (SMPS).
S
D
G
· Uninterruptible Power Supply (UPS),
S
· Adapter.
N-ChannelMOSFET
TO-247
Ordering and Marking Information
Package Code
F : TO-220
SM8A03NS
FP : TO-220FP
W：TO-247
Assembly Material
Handling Code
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
Temperature Range
Package Code
TU : Tube (TO-220/TO-220FP, 50ea/tube)
(TO-247, 30ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM8A03NS F/FP/W :
XXXXX - Lot Code
SM8A03N
XXXXX
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - March, 2015
®
SM8A03NSF/SM8A03NSFP/SM8A03NSW
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
800
±30
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
300μs Pulse Drain Current Tested
150
°C
TSTG
IS
-55 to 150
8 a
IDP
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
16 a
8 a
5 a
A
ID
Continuous Drain Current
138
Maximum Power Dissipation for
TO-220/TO-247
PD
55
W
31
Maximum Power Dissipation for
TO-220FP
PD
12.5
Thermal Resistance-Junction to Case for
TO-220/TO-247
RqJC
0.9
Thermal Resistance-Junction to Case for
TO-220FP
°C/W
4
RqJC
RqJA
Thermal Resistance-Junction to Ambient
62.5
Drain-Source Avalanche Ratings
dv/dt b MOSFET dv/dt ruggedness
50
130
2.5
0.3
V/ns
mJ
A
c
EAS
IAR
Avalanche Energy, Single Pulsed
Avalanche Current
d
d
EAR
Repetitive Avalanche Energy
mJ
Note a：limited by maximum junction temperature.
Note b：VDS=640V, ID=8A.
Note c：ID=1.8A, VDD=50V, Tj=25°C.
Note d：Repetitive Rating : Pulse width limited by maximum junction temperature.
2
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - March, 2015
®
SM8A03NSF/SM8A03NSFP/SM8A03NSW
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
800
-
930
-
-
-
VGS=0V, IDS=250mA
TJ=150°C
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
-
VDS=640V, VGS=0V
TJ=150°C
-
-
1
IDSS
mA
-
200
4.5
±100
VGS(th)
IGSS
Gate Threshold Voltage
2.5
-
3.5
-
V
nA
W
VDS=VGS, IDS=250mA
VGS=±30V, VDS=0V
VGS=10V, IDS=4A
Gate Leakage Current
e
RDS(ON)
Drain-Source On-state Resistance
-
0.68 0.78
Diode Characteristics
e
VSD
trr
Diode Forward Voltage
ISD=8A, VGS=0V
-
-
-
-
0.82
330
5.1
1.3
V
ns
mC
A
Reverse Recovery Time
-
-
-
ISD=8A, VR=480V
dlSD/dt=100A/ms
Qrr
Ir m
Reverse Recovery Charge
Peak Reverse Recovery Current
30
Dynamic Characteristicsf
VGS=0V,VDS=0V,
F=1MHz
RG
Gate Resistance
-
2.4
-
W
Ciss
Coss
Crss
td(ON)
Tr
Input Capacitance
-
-
-
-
-
-
-
1075 1400
VGS=0V,
VDS=25V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
380
16
-
-
-
-
-
-
13
VDD=400V,
IDS=8A, VGEN=10V,
RG=6W
28
ns
td(OFF)
Turn-off Delay Time
27
Tf
Turn-off Fall Time
19
Gate Charge Characteristicsf
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
27.5
7
37
-
VDS=640V, VGS=10V,
IDS=8A
nC
12
-
Note e：Pulse test ; pulse width£300ms, duty cycle£2%.
Note f ：Guaranteed by design, not subject to production testing.
3
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - March, 2015
®
SM8A03NSF/SM8A03NSFP/SM8A03NSW
Typical Operating Characteristics
Power Dissipation : TO-220/TO-247
Power Dissipation : TO-220FP
150
35
30
25
20
15
10
5
125
100
75
50
25
0
TC=25oC
20 40 60 80 100 120 140 160
TC=25oC
0
0
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area : TO-220/TO-247
Safe Operation Area : TO-220FP
50
50
10
10
1
300ms
1ms
10ms
100ms
300ms
1
0.1
1ms
1s
10ms
100ms
DC
1s
0.1
0.01
DC
TC=25OC
TC=25OC
0.01
1
10
100
1000 3000
1
10
100
1000 3000
VDS - Drain - Source Voltage (V)
VDS - Drain - Source Voltage (V)
4
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - March, 2015
®
SM8A03NSF/SM8A03NSFP/SM8A03NSW
Typical Operating Characteristics (Cont.)
Thermal Transient Impedance:
TO-220FP
Thermal Transient Impedance:
TO-220/TO-247
4
1
4
1
Duty = 0.5
0.2
Duty = 0.5
0.2
0.1
0.1
0.05
0.05
0.02
0.01
0.02
0.01
0.1
0.1
Single Pulse
Single Pulse
Mounted on 1in2 pad
Mounted on 1in2 pad
qJA : 62.5oC/W
R
qJA : 62.5oC/W
R
0.01
0.01
1E-4 1E-3 0.01
0.1
1
10 60
1E-4 1E-3 0.01
0.1
1
10 60
Square Wave PulseDuration (sec)
Square Wave PulseDuration (sec)
Output Characteristics
Drain Current
10
8
20
16
12
8
VGS=8,10,15V
6
7V
6V
4
2
4
TC=25oC,VG=10V
0
0
0
20 40 60 80 100 120 140 160
0
5
10
15
20
VDS - Drain - Source Voltage (V)
Tj - Junction Temperature (°C)
5
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - March, 2015
®
SM8A03NSF/SM8A03NSFP/SM8A03NSW
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
VGS = 10V
IDS = 4A
Tj=150oC
Tj=25oC
RON@Tj=25oC: 0.68W
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10000
1000
100
10
10
Frequency=1MHz
VDS=640V
IDS=8A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
1
0
5
10 15 20 25 30 35 40
0
4
8
12
16
20
24
28
VDS - Drain - Source Voltage (V)
QG -Gate Charge (nC)
6
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - March, 2015
®
SM8A03NSF/SM8A03NSFP/SM8A03NSW
Typical Operating Characteristics (Cont.)
BVDSS vs Junction Temperature
Drain-Source On Resistance
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
IDS=250mA
VGS=10V
0
2
4
6
8
10 12
14
-50 -25
0
25 50 75 100 125 150
VSD - Source - Drain Voltage (V)
ID -Drain Current (A)
Transfer Characteristics
VGS(th) vs Junction Temperature
100
10
1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
IDS=250mA
Tj=25oC
Tj=-55oC
Tj=150oC
0.1
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150
VGS - Gate-Source Voltage (V)
VGS - Gate-Source Voltage (V)
7
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - March, 2015
®
SM8A03NSF/SM8A03NSFP/SM8A03NSW
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01W
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
8
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - March, 2015
®
SM8A03NSF/SM8A03NSFP/SM8A03NSW
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making
great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - March, 2015
®
SM8A03NSF/SM8A03NSFP/SM8A03NSW
Classification Profile
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - March, 2015
®
SM8A03NSF/SM8A03NSFP/SM8A03NSW
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
Preheat & Soak
100 C
°
°
Temperature min (Tsmin
)
Temperature max (Tsmax
Time (Tsmin to Tsmax) (ts)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 C/second max.
°
6 C/second max.
°
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
350
Package
Thickness
Volume mm3
<350
<2.5 mm
235 C
220 C
°
°
2.5 mm
220 C
220 C
³
°
°
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
Volume mm3
Volume mm3
<350
350-2000
260 °C
250 °C
>2000
260 °C
245 °C
245 °C
260 °C
260 °C
250 °C
1.6 mm – 2.5 mm
³ 2.5 mm
245 °C
Reliability Test Program
Test item
Method
JESD-22, B102
JESD-22, A108
Description
SOLDERABILITY
HTRB
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
HTGB
PCT
TCT
JESD-22, A108
JESD-22, A102
JESD-22, A104
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - March, 2015
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