SP6661 [SIPEX]
High Frequency 200mA Charge Pump Inverter or Doubler; 高频200毫安电荷泵逆变器或倍增型号: | SP6661 |
厂家: | SIPEX CORPORATION |
描述: | High Frequency 200mA Charge Pump Inverter or Doubler |
文件: | 总7页 (文件大小:293K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SP6661
High Frequency 200mA Charge Pump
Inverter or Doubler
■ Inverts or Doubles Input Supply Voltage
V+
1
2
3
4
8
7
6
5
FC
■ 92% Power Efficiency at 100mA
■ 120kHz/900kHz Selectable Oscillator Fre-
quency
SP6661
OSC
CAP+
■ 4.5Ω Output Resistance Using 3.3µF Ceramic GND
LV
8 Pin nSOIC
Caps
OUT
CAP-
■ Low Voltage Battery Operation
■ Ideal for 3.6V Lithium Ion Battery or 5.0V Input
■ High Output Current – 200mA
■ Low Profile Solution
Now Available in Lead Free Packaging
■ 1.5V Inverter Startup Guaranteed
■ Pin-Compatible High-Current Upgrade of the
ICL7660 and 660 Industry Standard
■ Smallest Package Available for the 660
Industry Standard – 8 pin µSOIC
DESCRIPTION
The SP6661 is a CMOS DC-DC Monolithic Voltage Converter that can be implemented as a
Voltage Inverter or a Positive Voltage Doubler. As a Voltage Inverter, a -1.5V to -5.0V output can
be converted from a +1.5V to +5.0V input. As a Voltage Doubler, a +5.0V to +10.0V output can
beprovidedfroma+2.5Vto+5.0Vinput.TheSP6661isidealforbothbattery-poweredandboard
levelvoltageconversionapplicationswithatypicaloperatingcurrent of3mAandahighefficiency
(>90%) over most of its load-current range. Typical end products for this device are disk drive
supplies, operationalamplifierandinterfacepowersupplies, medicalinstruments, andhandheld
and laptop computers. The SP6661 is available in 8-pin NSOIC, and µSOIC packages.
+VIN
+2.5V to +5.0V
®
+VIN
+1.5V to +5.0V
+V
FC
1
8
7
6
C3
C3
OSC
LV
CAP+
GND
1µF to 22µF
®
2
3
1µF to 22µF
SP6661
DOUBLE
NEGATIVE
VOLTAGE
OUTPUT
+V
1
FC
8
7
C1
1µF to 22µF
CAP+
GND
SP6661
OSC
2
3
C2
1µF to 22µF
INVERTED
NEGATIVE
VOLTAGE
OUTPUT
OUT
CAP-
5
4
LV
C1
1µF to 22µF
6
5
C2
1µF to 22µF
OUT
CAP-
4
Figure 1: Voltage Inverter
Figure 2: Voltage Doubler
Date: 05/25/04
SP6661 High Frequency 200mA Charge Pump Inverter or Doubler
© Copyright 2004 Sipex Corporation
1
ABSOLUTE MAXIMUM RATINGS
These are stress ratings only and functional operation
of the device at these ratings or any other above those
indicated in the operation sections of the specifications
below is not implied. Exposure to absolute maximum
rating conditions for extended periods of time may
affect reliability.
OUT and V+ Continuous Output Current.........200mA
Output Short-Circuit Duration to GND (Note 1).......1s
Operating Temperature Ranges
SP6661E_...........................-40˚C to +85˚C
Continuous Power Dissipation (TAMB = 70˚C)
NSOIC (derate 5.88mW/˚C above +70˚C).......471mW
µSOIC (derate 4.10mW/˚C above +70˚C)........330mW
Operating Temperature.......................-40˚C to +85˚C
Storage Temperature........................-65˚C to +150˚C
Power Supply Voltage
(V+ to GND or GND to OUT).............................+5.6V
LV Input Voltages............(OUT - 0.3V) to (V+ + 0.3V)
FC and OSC Input Voltages......The least negative of
(OUT - 0.3V) or (V+ - 5.6V) to (V+ + 0.3V)
Lead Temperature (soldering 10s)..................+300˚C
SPECIFICATIONS
PARAMETER
MIN.
TYP.
MAX.
UNITS
CONDITIONS
Inverter Circuit at Low Frequency with 22µF Capacitors
V+ = +5.0V, C1 = C2 = C3 = 22µF, FC = open, LV = GND, TAMB = TMIN to TMAX; refer to Figure 1 test circuit.
Note 2
Supply Voltage Range
Start-Up Voltage
1.5
5.3
6
V
V
RL = 500Ω
0.93
3
Supply Current
mA
mA
µA
kHz
Ω
No Load
Max Output Current
Oscillator Input Current
Oscillator Frequency
Output Resistance
Voltage Conversion Efficiency
Power Efficiency
200
70
±1
120
5
170
7
IL = 100mA, Note 3
No Load
99.0
99.9
%
80
70
89
82
IL = 100mA
IL = 200mA
%
Doubler Circuit at Low Frequency with 22µF Capacitors
V+ = +5.0V, C1 = C2 = C3 = 22µF, FC = open, LV = GND, TAMB = TMIN to TMAX; refer to Figure 22 test circuit.
Note 2
Supply Voltage Range
Start-Up Voltage
2.5
5.3
6
V
V
RL = 1kΩ
1.5
3
Supply Current
mA
mA
µA
kHz
Ω
No Load
Max Output Current
Oscillator Input Current
Oscillator Frequency
Output Resistance
Voltage Conversion Efficiency
Power Efficiency
200
70
±1
120
4.5
170
7
IL = 100mA, Note 3
No Load
99.0
99.9
%
89
79
94
90
IL = 100mA
IL = 200mA
%
Date: 05/25/04
SP6661 High Frequency 200mA Charge Pump Inverter or Doubler
© Copyright 2004 Sipex Corporation
2
SPECIFICATIONS (continued)
PARAMETER
MIN.
TYP.
MAX.
UNITS
CONDITIONS
Inverter Circuit at High Frequency with 3.3µF Capacitors
V+ = +5.0V, C1 = C2 = C3 = 3.3µF, FC = V+, LV = GND, TAMB = TMIN to TMAX; refer to Figure 1 test circuit.
Note 2
Supply Voltage Range
Start-Up Voltage
1.5
5.3
18
V
V
RL = 500Ω
0.93
10
Supply Current
mA
mA
µA
kHz
Ω
No Load
Max Output Current
Oscillator Input Current
Oscillator Frequency
Output Resistance
Voltage Conversion Efficiency
Power Efficiency
200
500
99.0
±8
900
5
1250
7
IL = 100mA, Note 3
No Load
99.6
%
78
65
84
79
IL = 100mA
IL = 200mA
%
Doubler Circuit at High Frequency with 3.3µF Capacitors
V+ = +5.0V, C1 = C2 = C3 = 3.3µF, FC = V+, LV = GND, TAMB = TMIN to TMAX; refer to Figure 2 test circuit.
Note 2
Supply Voltage Range
Start-Up Voltage
2.5
5.3
18
V
V
RL = 1kΩ
1.5
10
Supply Current
mA
mA
µA
kHz
Ω
No Load
Max Output Current
Oscillator Input Current
Oscillator Frequency
Output Resistance
Voltage Conversion Efficiency
Power Efficiency
200
500
99.0
±8
900
4.5
1250
7
IL = 100mA, Note 3
No Load
99.9
%
87
79
92
89
IL = 100mA
IL = 200mA
%
NOTE 1: Specified output resistance is a combination of internal switch resistance and capacitor ESR.
NOTE 2: In the test circuit capacitors C1, C2 and C3 are 22µF, 0.05 maximum ESR, ceramic or 3.3µF, 0.05Ω
maximumESR, ceramic. CapacitorswithhigherESRmayreduceoutputvoltageandefficiency. RefertoCapacitor
Selection section.
NOTE 3: Specified output resistance is a combination of internal switch resistance and capacitor ESR. Refer to
Optimizing Capacitor Selection.
Date: 05/25/04
SP6661 High Frequency 200mA Charge Pump Inverter or Doubler
© Copyright 2004 Sipex Corporation
3
Optimizing Capacitor Selection
RefertoFigure1forthetotaloutputresistanceforvariouscapacitancevaluesandoscillatorfrequencies.
The reservoir and charge pump capacitor values are equal. The capacitance values required to maintain
comparable ripple and output resistance typically diminish proportionately as the pump frequency of
the SP6661 increases.
20
18
16
14
10KHz
12
10
8
20KHz
50KHz
100KHz
200KHz
500KHz
1000KHz
6
4
2
0
1
10
100
1000
C1, C2 Capacitance (uF)
Figure 1. Total Output Resistance for various capacitance values and oscillator frequencies.
Date: 05/25/04
SP6661 High Frequency 200mA Charge Pump Inverter or Doubler
© Copyright 2004 Sipex Corporation
4
PINOUT
®
8
1
2
3
4
V+
FC
CAP+
GND
7
6
5
OSC
LV
SP6661
OUT
CAP-
PIN ASSIGNMENTS
Pin Number Pin Symbol
Description
1
FC
Frequency Control for the internal oscillator. FC = open,
fosc = 120kHz typical; FC = V+ fosc = 900kHz typical.
2
3
3
CAP+
GND
GND
Connect to the positive terminal of the charge pump capacitor.
(Voltage Inverter Circuit) Ground.
(Positive Voltage Doubler Circuit) Positive supply voltage
input.
4
5
5
CAP-
OUT
OUT
Connect to the negative terminal of the charge pump capacitor.
(Voltage Inverter Circuit) Negative voltage output pin.
(Positive Voltage Doubler Circuit) Ground pin for power
supply.
6
7
LV
Low -voltage operation input pin in 660 circuits. In SP6661
circuits can be connected to GND, OUT or left open as desired
with no effect.
OSC
Control pin for the oscillator. Internally connected to 15pF
capacitor. An external capacitor can be added to slow the
oscillator. Be careful to minimize stray capacitance. An
external oscillator can be connected to overdrive the OSC pin.
8
8
V+
V+
(Voltage Inverter Circuit) Positive voltage input pin for the
power supply.
(Positive Voltage Doubler Circuit) Positive voltage output.
Date: 05/25/04
SP6661 High Frequency 200mA Charge Pump Inverter or Doubler
© Copyright 2004 Sipex Corporation
5
All package dimensions in inches
0.189/0.197
0.150/0.157
0.228/0.244
0.0256
BSC
12.0˚
±4˚
0.053/0.069
0.012
±0.003
0.008
0.014/0.019
0˚ - 6˚
0.006
±0.006
0.006
±0.006
0.0965
±0.003
0.050 BSC
R .003
1
0.118
±0.004
0.16
±0.003
2
3.0˚
±3˚
12.0˚
±4˚
0.0215
1
±0.006
0.020
0.020
0.037
Ref
1
2
2
0.116
±0.004
0.034
±0.004
0.116
±0.004
0.040
±0.003
0.013
±0.005
0.118
±0.004
0.004
±0.002
0.118
±0.004
100 die per waffle pack
95 NSOIC devices per tube, no minimum quantity
50 µSOIC devices per tube
P
W
8-pin NSOIC 13” reels: P = 8mm, W = 12mm
pkg
min qty per reel
std qty per reel
max qty per reel
CN
CU
500
500
1500
1500
2500
3000
Date: 05/25/04
SP6661 High Frequency 200mA Charge Pump Inverter or Doubler
© Copyright 2004 Sipex Corporation
6
ORDERING INFORMATION
Temperature Range
Part Number
Package Type
SP6661EN . ............................................ -40˚C to +85˚C ......................................... 8-Pin NSOIC
SP6661EN/TR ........................................ -40˚C to +85˚C ......................................... 8-Pin NSOIC
SP6661EU . ............................................ -40˚C to +85˚C ......................................... 8-Pin µSOIC
SP6661EU/TR ........................................ -40˚C to +85˚C ......................................... 8-Pin µSOIC
SP6661UEB ................................................................................... 8-Pin µSOIC Evaluation Board
Available in lead free packaging. To order add "-L" suffix to part number.
Example: SP6661EN/TR = standard; SP6661EN-L/TR = lead free
/TR = Tape and Reel
Pack quantity is 2500 for NSOIC.
ANALOG EXCELLENCE
Sipex Corporation
Headquarters:
233 Hillview Dr
Milpitas, CA 95035
TEL: (408) 934-7500
FAX: (408) 935-7600
Sipex Corporation reserves the right to make changes to any products described herein. Sipex does not assume any liability arising out of the
application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others.
Date: 05/25/04
SP6661 High Frequency 200mA Charge Pump Inverter or Doubler
© Copyright 2004 Sipex Corporation
7
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