BTB41-1200 [SIRECTIFIER]
Discrete Triacs;
| 型号： | BTB41-1200 |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | Discrete Triacs |
| 文件： | 总4页 (文件大小：270K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTB41
Discrete Triacs(Non-Isolated)
Dimensions TO-247AD
Dim.
Millimeter
Min. Max. Min.
Inches
Max.
T2
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
G
T1
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
VDRM/RRM VDSM/RSM
E
F
4.32 5.49 0.170 0.216
V
V
220
450
700
900
5.4
6.2 0.212 0.244
BTB41-200
BTB41-400
BTB41-600
BTB41-800
200
400
600
800
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
J
K
1.0
1.4 0.040 0.055
10.8 11.0 0.426 0.433
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
BTB41-1000
BTB41-1200
1000
1200
1100
1300
N
1.5 2.49 0.087 0.102
ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
Symbol
I
RMS on-state current (full sine wave)
T(RMS)
41
TO-247AD
A
Tc = 80 °C
t = 16.7 ms
t = 20 ms
I
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 60 Hz
F = 50 Hz
A
420
400
TSM
²
²
²
tp = 10 ms
A s
I t
I t Value for fusing
880
50
Critical rate of rise of on-state current
dI/dt
/V
F = 120 Hz
tp = 10 ms
tp = 20 µs
Tj = 125°C
A/µs
V
_
, tr < 100 ns
GT
I
= 2 x I
G
V
/V
Non repetitive surge peak off-state
voltage
DRM RRM
V
Tj = 25°C
DSM RSM
+ 100
I
Peak gate current
Tj = 125°C
8
1
A
GM
P
Average gate p ower diss ipation
Tj = 125°C
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
T
j
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
Value
Unit
50
mA
I - II - III
IV
I
(1)
GT
MAX.
100
V = 12 V
R = 33
Ω
Ω
D
L
V
V
V
GT
ALL
ALL
MAX.
MIN.
1.3
0.2
V
V = V
R = 3.3 k
Tj = 125°C
GD
D
DRM
L
I
(2)
L
I = 500 mA
mA
mA
H
T
80
70
MAX.
MAX.
I
I = 1.2 I
I- III-IV
II
G
GT
160
dV/dt (2)
V
V
67 %
DRM
V/µs
=
gate open Tj = 125°C
Tj = 125°C
D
MIN.
MIN.
500
10
(dI/dt)c (2) Without snubber
A/ms
P1
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com
BTB41
Discrete Triacs(Non-Isolated)
STATIC CHARACTERISTICS
Symbol
Test Conditions
Tj = 25°C
Value
Unit
I
= 60 A
tp = 380 µs
MAX.
1.55
V
V
V
(2)
(2)
TM
TM
V
Threshold voltage
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
0.85
10
5
MAX.
MAX.
to
R (2)
Dynamic resistance
mΩ
d
I
I
V
= V
RRM
µA
DRM
RRM
DRM
MAX.
5
mA
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
Junction to case (AC)
Junction to ambient
°C/W
0.6
50
th(j-c)
R
°C/W
th(j-a)
PRODUCT SELECTOR
Part Number
Voltage (xxx)
Sensitivity
Type
Package
~~
200 V
1000 V
BTB41
X
X
50 mA
Standard
TO-247AD
OTHER INFORMATION
Base
quantity
Packing
mode
Part Number
Marking
Weight
BTB41
120
Bulk
6 g
BTB41
P2
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com
BTB41
Discrete Triacs(Non-Isolated)
Fig. 1: Maximum power dissipation versus R MS
Fig. 2: R MS on-state current versus case
on-state current (full cycle).
temperature (full cycle).
P (W)
50
IT(R MS ) (A)
45
B TA41
40
α = 180°
40
30
20
10
B TB 41
35
30
25
20
15
10
5
180°
α
α
IT(R MS ) (A)
15 20 25
Tc(° C)
0
0
0
25
50
75
100
125
0
5
10
30
35
40
Fig. 3: R elative variation of thermal impedance
versus pulse duration.
Fig. 4: On-state characteristics (maximum
values).
K =[Zth/R th]
ITM (A)
400
1.E +00
Zth(j-c)
Tj max
100
1.E -01
Zth(j-a)
BTA/BTB41
Tj=25°C
10
1.E -02
Tj max.:
Vto = 0.85 V
R d = 10 mΩ
VTM (V)
tp (s )
1
1.E -03
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1.E -03 1.E -02 1.E -01 1.E +00 1.E +01 1.E +02 1.E +03
Fig. 5: S urge peak on-state current versus
number of cycles.
Fig. 6: Non-repetitive surge peak on-state
current for
a
sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.
ITS M (A), I² t (A² s )
ITS M (A)
450
10000
ITS M
400
t=20ms
dI/dt limitation:
50A/µs
I²t
350
One cycle
Non repetitive
Tj initial=25°C
1000
300
250
200
R epetitive
Tc=70°C
150
100
Tj initial=25°C
tp (ms )
50
Number of cycles
100
0.01
0
0.10
1.00
10.00
1
10
100
1000
P3
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com
BTB41
Discrete Triacs(Non-Isolated)
Fig. 7: R elative variation of gate trigger current,
holding current and latching current versus
Fig. 8: R elative variation ofcritical rate ofdecrease
of main current versus (dV/dt)c (typical values).
junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25° C]
2.5
(dI/dt)c [(dV/dt)c] / S pecified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
2.0
IGT
1.5
IH & IL
1.0
0.5
0.6
0.4
(dV/dt)c (V/µs )
Tj(° C)
40 60
0.0
-40 -20
0.1
1.0
10.0
100.0
0
20
80 100 120 140
Fig. 9: R elative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj s pecified]
6
5
4
3
2
1
Tj (° C)
0
0
25
50
75
100
125
P4
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com
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