MBR10100 [SIRECTIFIER]
肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。; 肖特基势垒二极管肖特基势垒二极管，高结温低漏电流肖特基势垒二极管高TJM低IRRM肖特基势垒二极管， TJ = -65 ° C〜 175 ° C， TJM = 175 ℃。
| 型号： | MBR10100 |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。 |
| 文件： | 总2页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1070 thru MBR10100
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dimensions TO-220AC
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
C
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
12.70 14.73
14.23 16.51
9.66 10.66
A
C
C(TAB)
3.54
5.85
2.54
1.15
-
4.08
6.85
3.42
1.77
6.35
0.89
5.33
4.82
0.56
2.49
1.39
A=Anode, C=Cathode, TAB=Cathode
VRRM
V
VRMS
V
VDC
V
-
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
0.64
4.83
3.56
0.38
2.04
0.64
MBR1070
MBR1080
MBR1090
MBR10100
70
49
56
63
70
70
80
80
90
90
100
100
Symbol
Characteristics
Maximum Ratings
Unit
I(AV)
Maximum Average Forward Rectified Current @TC=135oC
10
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
IFSM
150
dv/dt
Voltage Rate Of Change (Rated VR)
10000
V/us
IF=10A @TJ=25oC
Maximum Forward
0.85
0.75
0.80
VF
IF=10A @TJ=125oC
V
Voltage (Note 1)
IF=20A @TJ=125oC
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
0.1
100
IR
mA
@TJ=125oC
2.0
oC/W
pF
oC
ROJC
CJ
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
1100
-55 to +150
-55 to +175
TJ
TSTG
oC
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
MECHANICAL DATA
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MBR1070 thru MBR10100
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
10
8
150
125
100
75
6
4
50
2
0
25
0
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
RESISTIVE OR INDUCTIVE LOAD
20
20
NUMBER OF CYCLES AT 60Hz
40
60
80
100
120
140
160
1
2
5
10
50
100
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
100
TJ = 125 C
10
10
1.0
TJ = 75 C
0.1
1.0
0.1
TJ = 25 C
0.01
TJ = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.001
140
20
40
60
80
100
120
0
0.8
0.9
0.1 0.2
0.3
0.4
0.5
0.6
0.7
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
1000
TJ = 25 C, f= 1MHz
100
0.1
1
100
4
10
REVERSE VOLTAGE , VOLTS
相关型号：
MBR10100-BP
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
MBR10100-G
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC, LEAD FREE, PLASTIC PACKAGE-2
SENSITRON
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