MBR10200CT [SIRECTIFIER]
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers; 工作温度范围宽和高TJM肖特基势垒整流器
| 型号： | MBR10200CT |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR10150CT thru MBR10200CT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dimensions TO-220AB
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
C
A
A
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
12.70 13.97
14.73 16.00
9.91 10.66
C
C(TAB)
A
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
A=Anode, C=Cathode, TAB=Cathode
VRRM
V
VRMS
V
VDC
V
0.100
BSC
MBR10150CT 150
MBR10200CT 200
105
140
150
200
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Symbol
Characteristics
Maximum Ratings
Unit
I(AV)
Maximum Average Forward Rectified Current @TC=120oC
10
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
IFSM
120
dv/dt
Voltage Rate Of Change (Rated VR)
10000
V/us
o
IF=5A @TJ=25 C
0.95
-
0.95
0.80
o
Maximum Forward
Voltage (Note 1)
IF=5A @TJ=125 C
IF=10A @TJ=25oC
IF=10A @TJ=125oC
VF
V
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
0.05
15
IR
mA
@TJ=125oC
4.5
oC/W
ROJC
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
-55 to +150
-55 to +150
oC
oC
TJ
TSTG
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
MECHANICAL DATA
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MBR10150CT thru MBR10200CT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
100
70
10,000
1,000
100
10
50
TJ=150
T
J=150
T
J
=125
T
20
J
=100
TJ=125
10
7
TJ=100
5
1
TJ=25
2
1
0.1
T
J
=25
0.01
0.2
0.4
0.6
0.8
1
0
20
40
60
80
100
120 140
160
180
200
VF , INSTANTANEOUS VOLTAGE (VOLTS)
VR , REVERSE CURRENT (VOLTS)
Figure 1. Typical Forward Voltage (Per Leg)
Figure 2. Typical Reverse Current (Per Leg)
40
TJ=125
SQUARE
WAVE
RATED VOLTAGE
36
32
28
24
20
16
12
8
th
R
JC=2 /W
10
10
dc
I
PK
AV
=20
SQUARE
WAVE
I
5
4
0
0
0
5
10
15
20
25
30
35
90
100
110
120
130
140
150
160
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
TC , CASE TEMPERATURE
Figure 3. Forward Power Dissipation
Figure 4. Forward Current Derating, Case
10
8
500
RATED VOLTAGE
th
R
JA=16 /W
TJ=25
400
300
200
100
0
6
4
2
0
0
25
50
75
100
125
150
175
1
2
5
10
20
50
70 100
T
A
, AMBIENT TEMPERATURE
VR , REVERSE VOLTAGE (VOLTS)
Figure 5. Current Derating, Ambient
Figure 6. Typical Capacitance (Per Leg)
相关型号：
MBR10200CT-BP
Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
MBR10200CT-LJ
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-220AB,
DIODES
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