MUR1660CT [SIRECTIFIER]
快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。; 快速恢复二极管快恢复二极管，超快恢复二极管超快恢复二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。
| 型号： | MUR1660CT |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。 |
| 文件： | 总2页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR1660CT
Ultra Fast Recovery Diodes
Dimensions TO-220AB
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
C
A
A
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
12.70 13.97
14.73 16.00
9.91 10.66
C
C(TAB)
A
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
A=Anode, C=Cathode, TAB=Cathode
VRRM
VRMS
VDC
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
V
V
V
MUR1660CT
Symbol
600
420
600
Characteristics
Maximum Ratings
Unit
I(AV)
IFSM
VF
Maximum Average Forward Rectified Current @TC=100oC
16
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
125
1.5
Maximum Forward Voltage At 8.0A DC
V
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
5
500
IR
uA
@TJ=100oC
CJ
Typical Junction Capacitance Per Element (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)
80
50
pF
ns
oC/W
oC
TRR
ROJC
1.5
TJ,TSTG Operating And Storage Temperature Range
-55 to +150
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
3. Thermal Resistance Junction To Case.
FEATURES
MECHANICAL DATA
* Glass passivated chip
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MUR1660CT
Ultra Fast Recovery Diodes
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
16
12
150
125
100
75
8
4
50
25
0
RESISTIVE OR INDUCTIVE LOAD
Single Half-Sine-Wave
(JEDEC METHOD)
0
25
20
NUMBER OF CYCLES AT 60Hz
50
75
100
125
150
175
1
2
5
10
50
100
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100.0
10.0
100
T
J
= 125 C
T
J
= 125 C
= 100 C
50-200V
T
J
10
300-400V
500-600V
J
T = 75 C
1.0
1.0
0.1
J
T = 25 C
J
T = 25 C
0.1
.01
PULSE WIDTH 300us
2% Duty cycle
140
20
40
60
80
100
120
0
1.4
1.6
0
0.2
0.4
0.6
0.8
1.0
1.2
1.8
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
50-400V
100
500-600V
T
J
= 25 C, f= 1MHz
10
0.1
1
4
100
10
REVERSE VOLTAGE , VOLTS
相关型号：
MUR1660CT-BP
Rectifier Diode, 1 Phase, 2 Element, 16A, 600V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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