MUR3030 [SIRECTIFIER]
快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。; 快速恢复二极管快恢复二极管，超快恢复二极管超快恢复二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。
| 型号： | MUR3030 |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。 |
| 文件： | 总3页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR3020, MUR3030
Ultra Fast Recovery Diodes
Dim.
Millimeter
Min. Max. Min.
Inches
Max.
Dimensions TO-247AC
C
A
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
C(TAB)
A
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
C
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
A=Anode, C=Cathode, TAB=Cathode
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
J
K
1.0
1.4 0.040 0.055
VRSM
V
VRRM
V
10.8 11.0 0.426 0.433
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
MUR3020
MUR3030
200
300
200
300
N
1.5 2.49 0.087 0.102
Symbol
Test Conditions
Maximum Ratings
Unit
70
30
IFRMS
IFAVM
A
TC=145oC; rectangular, d=0.5
IFSM
EAS
IAR
TVJ=45oC; tp=10ms (50Hz), sine
TVJ=25oC; non-repetitive; IAS=3A; L=180uH
300
1.2
0.3
A
mJ
A
.
VA=1.5 VR typ.; f=10kHz; repetitive
-55...+175
175
-55...+150
TVJ
TVJM
Tstg
oC
Ptot
Md
TC=25oC
165
0.8...1.2
6
W
Nm
g
mounting torque
Weight typical
MUR3020, MUR3030
Ultra Fast Recovery Diodes
Symbol
Test Conditions
Characteristic Values
Unit
typ.
max.
TVJ=25oC; VR=VRRM
TVJ=150oC; VR=VRRM
250
1
uA
mA
IR
IF=30A; TVJ=150oC
0.91
1.25
V
VF
TVJ=25oC
RthJC
RthCH
0.9
K/W
0.25
30
IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC
VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100oC
ns
A
trr
7
IRM
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Antiparallel diode for high frequency
switching devices
* Avalanche voltage rated for reliable
operation
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Soft reverse recovery for low
EMI/RFI
* Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
* Soft recovery behaviour
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
MUR3020, MUR3030
Ultra Fast Recovery Diodes
60
A
800
nC
30
A
TVJ = 100°C
VR = 150V
TVJ = 100°C
VR = 150V
25
600
400
200
0
IRM
IF
40
Qr
20
15
10
5
IF = 60A
IF = 30A
IF = 15A
IF = 60A
IF = 30A
IF = 15A
TVJ=150°C
TVJ=100°C
TVJ= 25°C
20
0
0
V
0.0
0.5
1.0
VF
1.5
A/us
-diF/dt
100
1000
0
200 400 600 1000
A/us
-diF/dt
Fig. 1 Forward current IF versus VF
1.4
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
90
14
1.2
TVJ = 100°C
TVJ = 100°C
ns
us
1.0
V
IF = 30A
VR = 150V
1.2
Kf
80
trr
VFR
tfr
tfr
12
10
8
0.8
0.6
0.4
0.2
0.0
1.0
70
60
50
40
VFR
IRM
IF = 60A
IF = 30A
IF = 15A
0.8
Qr
0.6
0.4
A/us
0
40
80
120
160
0
200 400 600 1000
A/us
0
200 400 600 1000
°C
diF/dt
TVJ
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
1
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
0.1
1
2
3
0.465
0.179
0.256
0.005
0.0003
0.04
ZthJC
0.01
0.001
0.0001
s
0.00001
0.0001
0.001
0.01
0.1
1
t
Fig. 7 Transient thermal resistance junction to case
相关型号：
MUR3030PT
快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。
SIRECTIFIER
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