MUR3040 [SIRECTIFIER]
快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。; 快速恢复二极管快恢复二极管，超快恢复二极管超快恢复二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。
| 型号： | MUR3040 |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。 |
| 文件： | 总3页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR3040, MUR3060
Ultra Fast Recovery Diodes
Dim.
Millimeter
Min. Max. Min.
Inches
Max.
Dimensions TO-247AC
C
A
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
C(TAB)
A
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
C
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
A=Anode, C=Cathode, TAB=Cathode
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
J
K
1.0
1.4 0.040 0.055
VRSM
V
VRRM
V
10.8 11.0 0.426 0.433
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
MUR3040
MUR3060
400
600
400
600
N
1.5 2.49 0.087 0.102
Symbol
Test Conditions
Maximum Ratings
Unit
TVJ=TVJM
70
37
375
IFRMS
IFAVM
IFRM
TC=85oC; rectangular, d=0.5
A
tp<10us; rep. rating, pulse width limited by TVJM
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
300
320
260
280
IFSM
A
TVJ=150oC
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
450
420
340
320
I2t
A2s
oC
TVJ=150oC
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Ptot
Md
TC=25oC
125
0.8...1.2
6
W
Nm
g
Mounting torque
Weight
MUR3040, MUR3060
Ultra Fast Recovery Diodes
Symbol
Test Conditions
Characteristic Values
Unit
typ.
max.
TVJ=25oC; VR=VRRM
100
50
7
uA
uA
mA
IR
o
.
TVJ=25 C; VR=0.8 VRRM
o
.
TVJ=125 C; VR=0.8 VRRM
IF=37A; TVJ=150oC
1.4
1.6
V
VF
TVJ=25oC
For power-loss calculations only
1.01
7.1
1
V
VTO
rT
m
TVJ=TVJM
RthJC
RthCK
RthJA
0.25
K/W
35
50
11
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC
_
VR=350V; IF=30A; -diF/dt=240A/us; L<0.05uH; TVJ=100 C
35
10
ns
A
trr
o
IRM
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
JEDEC TO-247AC
* Antiparallel diode for high frequency
switching devices
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Planar passivatd chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
* Soft recovery behaviour
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
MUR3040, MUR3060
Ultra Fast Recovery Diodes
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage
versus diF/dt.
Fig. 7 Transient thermal impedance junction to case.
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