MUR820 [SIRECTIFIER]
快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。; 快速恢复二极管快恢复二极管，超快恢复二极管超快恢复二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。
| 型号： | MUR820 |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。 |
| 文件： | 总3页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR820, MUR860, MUR8100
Ultra Fast Recovery Diodes
Dimensions TO-220AC
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
C
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
12.70 14.73
14.23 16.51
9.66 10.66
A
C
C(TAB)
3.54
5.85
2.54
1.15
-
4.08
6.85
3.42
1.77
6.35
0.89
5.33
4.82
0.56
2.49
1.39
A=Anode, C=Cathode, TAB=Cathode
-
0.250
VRSM
V
VRRM
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
0.64
4.83
3.56
0.38
2.04
0.64
V
MUR820
MUR860
MUR8100
200
600
1000
200
600
1000
Symbol
Test Conditions
Maximum Ratings
Unit
TVJ=TVJM
16
8
130
IFRMS
IFAVM
IFRM
TC=115oC; rectangular, d=0.5
A
A
tp<10us; rep. rating, pulse width limited by TVJM
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
100
110
85
IFSM
TVJ=150oC
95
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
50
50
36
37
I2t
A2s
oC
TVJ=150oC
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Ptot
Md
TC=25oC
50
0.4...0.6
2
W
Nm
g
Mounting torque
Weight
MUR820, MUR860, MUR8100
Ultra Fast Recovery Diodes
Symbol
Test Conditions
Characteristic Values
Unit
typ.
max.
TVJ=25oC; VR=VRRM
20
10
1.5
uA
uA
mA
IR
o
.
TVJ=25 C; VR=0.8 VRRM
o
.
TVJ=125 C; VR=0.8 VRRM
IF=8A; TVJ=150oC
1.3
1.5
V
VF
TVJ=25oC
For power-loss calculations only
0.98
28.7
2.5
V
VTO
rT
m
TVJ=TVJM
RthJC
RthCK
RthJA
0.5
K/W
60
50
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC
_
VR=350V; IF=8A; -diF/dt=64A/us; L<0.05uH; TVJ=100 C
35
ns
A
trr
o
2.5
2.8
IRM
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
JEDEC TO-220AC
* Antiparallel diode for high frequency
switching devices
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
* Soft recovery behaviour
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
MUR820, MUR860, MUR8100
Ultra Fast Recovery Diodes
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage
versus diF/dt.
Fig. 7 Transient thermal impedance junction to case.
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