S1PHB15-12 [SIRECTIFIER]
晶闸管（可控硅）Thyristors (SCRs)，晶闸管/二极管模块Thyristor-Diode Modules。; 晶闸管（可控硅）晶闸管（SCR ） ，晶闸管/二极管模块晶闸管，二极管模块。
| 型号： | S1PHB15-12 |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 晶闸管（可控硅）Thyristors (SCRs)，晶闸管/二极管模块Thyristor-Diode Modules。 |
| 文件： | 总3页 (文件大小：362K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S1PHB15
Single Phase Half Controlled Bridge With Free Wheeling Diode
Dimensions in mm (1mm=0.0394")
Type
VRSM
VDSM
V
VRRM
VDRM
V
S1PHB15-08
S1PHB15-12
S1PHB15-14
S1PHB15-16
S1PHB15-18
900
800
1300
1500
1700
1900
1200
1400
1600
1800
2
8
1
3
6
4
Symbol
Test Conditions
Maximum Ratings
Unit
I
dAV
TK=85oC, module
module
15
21
15
A
IdAVM
I
FRMS, ITRMS per leg
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
190
210
170
190
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
ITSM, IFSM
A
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
160
180
140
145
I2t
A2s
TVJ=125oC
repetitive, IT=50A
150
f=50Hz, tp=200us
(di/dt)cr VD=2/3VDRM
IG=0.3A
A/us
500
non repetitive, IT=1/2IdAV
VDR=2/3VDRM
diG/dt=0.3A/us
TVJ=TVJM;
RGK= ; method 1 (linear voltage rise)
1000
V/us
W
(dv/dt)cr
TVJ=TVJM
PGM
tp=30us
tp=500us
10
5
IT=ITAVM
0.5
10
W
V
PGAVM
VRGM
-40...+125
125
-40...+125
TVJ
TVJM
Tstg
oC
50/60Hz, RMS
IISOL<1mA
t=1min
t=1s
3000
3600
VISOL
V~
_
Mounting torque (M5)
2-2.5
18-22
Nm
lb.in.
Md
(10-32 UNF)
Weight
50
g
S1PHB15
Single Phase Half Controlled Bridge With Free Wheeling Diode
Symbol
Test Conditions
Characteristic Values
Unit
5
0.3
TVJ=TVJM; VR=VRRM; VD=VDRM
IR, ID
mA
TVJ=25oC
IT, IF=45A; TVJ=25oC
For power-loss calculations only (TVJ=125oC)
2.8
1.0
40
V
V
VT, VF
VTO
rT
m
VD=6V;
VD=6V;
TVJ=25oC
TVJ=-40oC
TVJ=25oC
TVJ=-40oC
TVJ=125oC
1.0
1.2
V
VGT
65
80
50
IGT
mA
TVJ=TVJM;
TVJ=TVJM;
VD=2/3VDRM
0.2
5
V
VGD
IGD
VD=2/3VDRM
mA
TVJ=25oC
TVJ=-40oC
TVJ=125oC
150
200
100
tG=30us; IG=0.3A;
diG/dt=0.3A/us
IL
mA
TVJ=25oC; VD=6V; RGK=
TVJ=25oC; VD=1/2VDRM
IG=0.3A; diG/dt=0.3A/us
100
2
mA
us
IH
tgd
TVJ=125oC; IT=15A; tp=300us; VR=100V
typ.
tq
150
75
us
VD=2/3VDRM; dv/dt=20V/us; di/dt=-10A/us
uC
Qr
per thyristor(diode); DC current
per module
2.4
0.6
K/W
K/W
RthJC
RthJK
per thyristor(diode); DC current
per module
3.0
0.75
Creepage distance on surface
Creepage distance in air
Maximum allowable acceleration
10
12.6
6.3
50
mm
mm
m/s2
dS
dA
a
1000
TVJ
= 25°C
1: I
GT, TVJ = 125°C
2: IGT, TVJ
3: IGT, TVJ
=
=
25°C
V
s
-40°C
VG
tgd
typ.
Limit
100
10
1
3
2
1
6
1
5
4
4: P
GAV = 0.5 W
5: PGM
6: PGM
=
=
1 W
I
GD, TVJ = 125°C
10 W
0.1
1
10
100
1000
IG
10
100
mA
1000
mA
IG
Fig. 2 Gate controlled delay time tgd
Fig. 1 Gate trigger range
S1PHB15
Single Phase Half Controlled Bridge With Free Wheeling Diode
Fig. 4 I2t versus time (1-10 ms)
per chip
Fig. 3 S urge overload current per chip
IFS M: Crest value, t: duration
Fig. 5 Max. forward current at
heatsink temperature
Fig. 6 Power dissipation versus direct output current and ambient temperature
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1
2
3
0.34
1.16
1.5
0.0344
0.12
0.5
Fig. 7 Transient thermal impedance junction to heatsink per chip
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