SBL830 [SIRECTIFIER]
肖特基势垒二极管Schottky Barrier Diodes，低压降肖特基势垒二极管Low VF Schottky Barrier Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。; 肖特基势垒二极管肖特基势垒二极管，低压降肖特基势垒二极管低VF肖特基势垒二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。
| 型号： | SBL830 |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 肖特基势垒二极管Schottky Barrier Diodes，低压降肖特基势垒二极管Low VF Schottky Barrier Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。 |
| 文件： | 总2页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBL830 thru SBL845
Low VF Schottky Barrier Rectifiers
Dimensions TO-220AC
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
C
A
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
12.70 14.73
14.23 16.51
9.66 10.66
B
C
D
E
F
G
H
J
K
L
M
N
Q
A
C
C(TAB)
3.54
5.85
2.54
1.15
-
4.08
6.85
3.42
1.77
6.35
0.89
5.33
4.82
0.56
2.49
1.39
A=Anode, C=Cathode, TAB=Cathode
VRRM
V
VRMS
V
VDC
V
-
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
0.64
4.83
3.56
0.38
2.04
0.64
SBL830
SBL835
SBL840
SBL845
30
21
30
35
40
45
35
24.5
28
40
45
31.5
Symbol
Characteristics
Maximum Ratings
Unit
I(AV)
Maximum Average Forward Rectified Current @TC=95oC
8
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
IFSM
VF
200
Maximum Forward Voltage At 8.0A DC (Note 1)
0.55
V
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
0.5
50
IR
mA
@TJ=100oC
CJ
ROJC
TJ
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
450
pF
oC/W
oC
3.0
-55 to +125
-55 to +150
TSTG
oC
NOTES: 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
3. Thermal Resistance Junction To Case.
FEATURES
MECHANICAL DATA
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
SBL830 thru SBL845
Low VF Schottky Barrier Rectifiers
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
10
8
300
250
200
150
100
6
4
RESISTIVE OR
INDUCTIVE LOAD
2
0
50
0
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
20
NUMBER OF CYCLES AT 60Hz
50
75
100
125
150
175
1
2
5
10
50
100
25
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
1000
100
100
10
10
TJ = 100 C
TJ = 75 C
1.0
1.0
0.1
TJ = 25 C
0.1
TJ = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.01
140
20
40
60
80
100
120
0
0.8
0.9
0.1 0.2
0.3
0.4
0.5
0.6
0.7
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
1000
TJ = 25 C, f= 1MHz
100
0.1
1
4
100
10
REVERSE VOLTAGE , VOLTS
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